JPH0733574B2 - Substrate holding mechanism in thin film manufacturing equipment - Google Patents

Substrate holding mechanism in thin film manufacturing equipment

Info

Publication number
JPH0733574B2
JPH0733574B2 JP17314587A JP17314587A JPH0733574B2 JP H0733574 B2 JPH0733574 B2 JP H0733574B2 JP 17314587 A JP17314587 A JP 17314587A JP 17314587 A JP17314587 A JP 17314587A JP H0733574 B2 JPH0733574 B2 JP H0733574B2
Authority
JP
Japan
Prior art keywords
substrate
magneto
optical recording
thin film
holding mechanism
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP17314587A
Other languages
Japanese (ja)
Other versions
JPS6417865A (en
Inventor
正 水谷
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP17314587A priority Critical patent/JPH0733574B2/en
Publication of JPS6417865A publication Critical patent/JPS6417865A/en
Publication of JPH0733574B2 publication Critical patent/JPH0733574B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04Coating on selected surface areas, e.g. using masks
    • C23C14/042Coating on selected surface areas, e.g. using masks using masks
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50Substrate holders
    • C23C14/505Substrate holders for rotation of the substrates

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、薄膜の製造装置における基板の保持機構に関
する。
The present invention relates to a substrate holding mechanism in a thin film manufacturing apparatus.

〔従来の技術〕[Conventional technology]

近年、光磁気記録媒体に関する研究が盛んで、実用化に
近いレベルまで進んでいる。そこで、従来の薄膜の製造
装置における光磁気記録媒体の製造工程を、第4図に、
一部上視図を示して詳述する。第4図が、光磁気記録媒
体の保護層もしくは、光磁気記録層を成膜するスパッタ
室の断面模式図である。22がスパッタ室、23が垂直軸回
転するトレー、24が基板の保持板、25が基板と基板の保
持板との空隙、26が基板、27が基板の内周部分に薄膜が
積層しないように取り付けたセンターマスキングキャッ
プ、28がターゲットからのスパッタ時の輻射熱により基
板の温度上昇を防止するために設けた基板の裏側の空洞
部分で、29がターゲットである。第1段階は、透明プラ
スチック基板である26を基板の保持板24に説けられた基
板よりも大きい内径と厚みの円筒形の空隙部分25に保持
し、27のセンターマスキングキャップを取り付けて、23
にセットし、真空ポンプで、スパッタ室を高真空にす
る。第2段階は23を垂直輻回転させると、26の透明プラ
スチック基板は、23の垂直軸回転方向に公転をするとと
もに25の空隙部分によって多少なりの偏心はするもの
の、ほぼ円状にある一定垂直軸回転数に対して、自転す
る。つまり、自公転しながら、第1層の保護層を成膜す
る。第3段階は、透明プラスチック基板を自公転させな
がら、第2層の光磁気記録層を成膜する。第4段階は、
光磁気記録層をサンドイッチ構造にするため再び基板を
自公転させながら保護層を成膜するといった工程であ
る。
In recent years, research on magneto-optical recording media has been brisk and progressing to a level close to practical use. Therefore, the manufacturing process of the magneto-optical recording medium in the conventional thin film manufacturing apparatus is shown in FIG.
A partial top view is shown and explained in full detail. FIG. 4 is a schematic sectional view of a sputtering chamber for forming a protective layer of a magneto-optical recording medium or a magneto-optical recording layer. 22 is a sputtering chamber, 23 is a tray that rotates on a vertical axis, 24 is a substrate holding plate, 25 is a gap between the substrate and the substrate holding plate, 26 is a substrate, and 27 is a thin film so as not to be laminated on the inner peripheral portion of the substrate. The attached center masking cap 28 is a hollow portion on the back side of the substrate provided to prevent the temperature of the substrate from rising due to radiant heat during sputtering from the target, and 29 is the target. In the first step, a transparent plastic substrate 26 is held in a cylindrical void portion 25 having an inner diameter and a thickness larger than that of the substrate explained by a substrate holding plate 24, and a center masking cap 27 is attached to
And set the sputtering chamber to a high vacuum with a vacuum pump. In the second stage, when 23 is vertically radiated, the transparent plastic substrate of 26 revolves in the direction of rotation of the vertical axis of 23, and although there is some eccentricity due to the void portion of 25, it is a constant vertical shape that is almost circular. It rotates about the shaft rotation speed. That is, the first protective layer is formed while rotating on its own axis. In the third step, the magneto-optical recording layer of the second layer is formed while rotating the transparent plastic substrate. The fourth stage is
This is a process of forming a protective layer while revolving the substrate around again to make the magneto-optical recording layer a sandwich structure.

〔発明が解決しようとする問題点〕[Problems to be solved by the invention]

しかし、前述の従来技術では、光磁気記録層の組成面内
分布が少なく、量産性に優れてはいるものの、第4図に
おいて、26の透明プラスッチク基板の24の基板の保持板
との接触面、つまり基板の保護層と光磁気記録層の成膜
面、もしくは薄膜上に基板の自公転時つまり、スパッタ
時にすり傷が生じることで、光磁気記録媒体の外観性に
劣り、また、生じた基板上の傷の部分から、ダストを発
生し、光磁気記録媒体の外周部分の初期特性が劣り、ま
た生じた薄膜上の傷より外部水分が混入し特性が経時劣
化するという問題点を有していた。そこで、本発明はこ
のような問題点を解決するもので、その目的とするとこ
ろは、傷のつかない光磁気記録媒体の製造装置における
基板保持機構を提供するところにある。
However, in the above-mentioned conventional technology, although the composition in-plane distribution of the magneto-optical recording layer is small and the mass productivity is excellent, in FIG. 4, the contact surface of the transparent plastic substrate 26 of FIG. In other words, the appearance of the magneto-optical recording medium was inferior and caused because scratches were generated on the film forming surface of the protective layer of the substrate and the magneto-optical recording layer, or on the thin film when the substrate revolved, that is, during sputtering. There is a problem that dust is generated from the scratched part on the substrate, the initial characteristics of the outer peripheral part of the magneto-optical recording medium are inferior, and external moisture is mixed from the scratches on the thin film generated, and the characteristics deteriorate with time. Was there. Therefore, the present invention solves such a problem, and an object of the present invention is to provide a substrate holding mechanism in a manufacturing apparatus of a magneto-optical recording medium which is not damaged.

〔問題点を解決するための手段〕[Means for solving problems]

本発明の薄膜の製造装置における基板保持機構は、基板
上に、単層及び多層成膜する薄膜の製造装置における基
板保持機構において、以下の少なくとも1つの構成を有
する機構を設けたことを特徴とする。
The substrate holding mechanism in the thin film manufacturing apparatus of the present invention is characterized in that a mechanism having at least one of the following configurations is provided on the substrate in the substrate holding mechanism in the thin film manufacturing apparatus for forming a single layer and a multilayer film. To do.

(a)基板を自公転させるために、基板よりも大きい内
径と厚みをもった円筒形の空隙が設けられた基板の保持
板の、基板との接触面つまり、外周マスキング部分に、
シリコーン系もしくは、フッ素系離型剤をコーティン
グ、もしくはテフロン材を取り付けた基板の保持板。
(A) In order to revolve the substrate on its own axis, the holding plate of the substrate provided with a cylindrical void having a larger inner diameter and thickness than the substrate has a contact surface with the substrate, that is, an outer peripheral masking portion,
A substrate holding plate coated with a silicone-based or fluorine-based release agent or attached with a Teflon material.

(b)基板の内周部分を、センターマスキングキャップ
と、基板の裏当て材とのねじ止めでマスキングするため
の基板の裏当て材を、センターマスキングキャップより
も重くした裏当て材。
(B) A backing material in which the backing material of the substrate for masking the inner peripheral portion of the substrate by screwing the center masking cap and the backing material of the substrate is heavier than the center masking cap.

〔実施例〕〔Example〕

本発明の具体的応用分野の一例は、光磁気記録媒体の製
造工程における薄膜の製造過程で、以下実施例に基づ
き、詳細に説明する。第1図から第3図は、本発明の実
程例における基板保持機構を用いて、透明プラスチック
基板をスパッタ室に一度に、多数枚、収容した時の断面
模式図である。第1図が、4の透明プラスチック基板
と、2の基板の保持板との接触する部分に、3のシリコ
ーン系もしくは、フッ素系離型剤をコーティングした基
板保持機構を用いて、透明プラスチック基板をスパッタ
室に一度に多数枚、収容した時の断面模式図である。1
が、垂直軸回転するトレー、5が基板の内周部分に、薄
膜が積層しないように取り付けたセンターマスキングキ
ャップ、6がターゲットからのスパッタ時の輻射熱によ
り、透明プラスチック基板の温度上昇を防止するために
基板の裏側に設けた空洞部分で、7がターゲットであ
る。第2図は、11の透明プラスチック基板と、9の基板
の保持板との接触部分に、10のテフロン材を取り付けた
基板保持機構を用いて、透明プラスチック基板を、スパ
ッタ室に一度に多数枚、収容した時の断面模式図であ
る。8が垂直軸回転するトレー、12が基板の内周部分
に、薄膜が積層しないように取り付けたセンターマスキ
ングキャップ、13がターゲットからのスパッタ時の輻射
熱により透明プラスチック基板の温度上昇を防止するた
めに基板の裏側に設けた空洞部分で、14がターゲットで
ある。第3図は、基板の内周部分に薄膜が積層しないよ
うに、18のセンターマスキングキャップと、17のセンタ
ーマスキングキャップの基板の裏当て部分の裏当て材と
ねじ止めする裏当て材の重さをセンターマスキングキャ
ップより重くして、重さのバランスをとった基板保持機
構を用いて、透明プラスチック基板を、スパッタ室に一
度に多数枚、収容した時の断面模式図である。15が垂直
軸回転するトレー、16が基板の保持板、19が透明プラス
チック基板、20がターゲットからのスパッタ時の輻射熱
により透明プラスチック基板の温度上昇を防止するため
に基板の裏側に設けた空洞部分で、21がターゲットであ
る。第5図が、本発明の薄膜の製造装置における基板保
持機構によって作製した最終的な光磁気記録媒体の断面
図である。30の透明プラスチック基板であるポリカーボ
ネート基板(案内溝付である。)をアルゴンと窒素雰囲
気下での反応性RFマグネトロンスパッタリング法を用い
て、31の窒化アルミニウムシリコンを1000Å成膜する。
次に、DCマグネトロンスパッタリング法を用いて、32の
NdDyFeCoTiの光磁気記録層を400Å成膜する。そして、
光磁気記録層の酸化防止のために、33の窒化アルミニウ
ムシリコンで、サンドイッチする。膜厚は、1000Åであ
る。最後に、34の窒化アルミニウムシリコンを900Å成
膜した35のポリカーボネート基板(案内溝なしであ
る。)と、36のUV硬化樹脂層で貼り合わせる。
An example of a specific application field of the present invention is a thin film manufacturing process in a manufacturing process of a magneto-optical recording medium, which will be described in detail based on the following embodiments. FIGS. 1 to 3 are schematic cross-sectional views when a large number of transparent plastic substrates are accommodated in the sputtering chamber at one time by using the substrate holding mechanism in the practical example of the present invention. 1 shows a transparent plastic substrate using a substrate holding mechanism in which the transparent plastic substrate 4 and the holding plate of the substrate 2 are coated with the silicone-based or fluorine-based release agent of 3 It is a cross-sectional schematic diagram at the time of accommodating many sheets at once in a sputtering chamber. 1
Is a tray that rotates on a vertical axis, 5 is a center masking cap attached to the inner peripheral portion of the substrate so that the thin films are not laminated, and 6 is for preventing the temperature rise of the transparent plastic substrate due to radiant heat at the time of sputtering from the target. In the hollow part provided on the back side of the substrate, 7 is the target. FIG. 2 shows that, using a substrate holding mechanism in which 10 Teflon materials are attached to the contact portions of 11 transparent plastic substrates and 9 substrate holding plates, a large number of transparent plastic substrates are put in the sputtering chamber at one time. FIG. 3 is a schematic cross-sectional view of when it is housed. 8 is a tray that rotates on a vertical axis, 12 is a center masking cap attached to the inner peripheral portion of the substrate so that the thin films are not laminated, and 13 is for preventing the temperature rise of the transparent plastic substrate due to radiant heat at the time of sputtering from the target. 14 is a target, which is a hollow portion provided on the back side of the substrate. Fig. 3 shows the weight of the backing material for the center backing material of the center masking cap 18 and the centering masking cap 17 of the board and the backing material of the backing material for the screwing, so that the thin film is not laminated on the inner circumference of the board. FIG. 3 is a schematic cross-sectional view of a case where a large number of transparent plastic substrates are accommodated in the sputtering chamber at a time by using a substrate holding mechanism in which the weight is balanced with respect to the center masking cap and the weight is balanced. 15 is a tray that rotates on a vertical axis, 16 is a substrate holding plate, 19 is a transparent plastic substrate, and 20 is a hollow portion provided on the back side of the substrate to prevent the temperature of the transparent plastic substrate from rising due to radiant heat during sputtering from the target. So 21 is the target. FIG. 5 is a sectional view of the final magneto-optical recording medium manufactured by the substrate holding mechanism in the thin film manufacturing apparatus of the present invention. A polycarbonate substrate (with a guide groove), which is a transparent plastic substrate of 30, is deposited by 1000 Å aluminum silicon nitride of 31 by a reactive RF magnetron sputtering method under an atmosphere of argon and nitrogen.
Next, using the DC magnetron sputtering method, 32
A 400 Å layer of NdDyFeCoTi magneto-optical recording layer is formed. And
To prevent oxidation of the magneto-optical recording layer, it is sandwiched with 33 aluminum silicon nitride. The film thickness is 1000Å. Finally, it is bonded with 35 UV-curable resin layers of 35 polycarbonate substrates (without guide grooves) on which 34 aluminum nitride silicon films of 900 liters are formed.

光磁気記録媒体は、透明プラスチック基板上に成膜され
る保護層と光磁気記録層は、その膜厚が基板上の全領域
にわたってほぼ均一であることが必要とされ、特に重要
なことは、薄膜(特に光磁気記録層)の組成が基板上の
前領域にわたって均一でなれければならない。かつ、光
磁気記録媒体の光磁気記録層の欠陥は、少なくする必要
があり、特性も経時劣化をおさえ、光磁気記録媒体の寿
命を10年以上と保証する必要があり、本発明によって第
1図及び第2図において基板の保持板の基板と基板の保
持板との接触面に、シリコーン系、もしくは、フッ素系
離型剤をコーティング、もしくは、テフロン材を取り付
けて、基板の保持板の、基板と基板の保持板との接触面
の硬度を下げ、潤滑性を上げ、基板の自公転をなめらか
にしたことで、また、第3図においてセンターマスキン
グキャップの、基板の裏当て部分の裏当て材の重さをセ
ンターマスキングキャップより重くして、基板の自公転
透明プラスチック基板を、トレー側、つまり基板の裏側
に力が加わるようにバランスを取ったことで、基板上も
しくは薄膜上にすり傷の付かない外観性に優れた光磁気
記録媒体を製造することが可能となり、従来から問題と
されている光磁気記録媒体上の全領域にわたって、光磁
気記録層の磁気特性である保磁力とファラディ回転角
が、均一となり、実用化の目安とされている50dBのCNR
も光磁気記録媒体上の全領域にわたって均一に確保でき
た。
In the magneto-optical recording medium, the protective layer and the magneto-optical recording layer formed on the transparent plastic substrate are required to have a substantially uniform film thickness over the entire area of the substrate. The composition of the thin film (especially the magneto-optical recording layer) must be uniform over the front area on the substrate. Moreover, it is necessary to reduce defects in the magneto-optical recording layer of the magneto-optical recording medium, to suppress deterioration of characteristics over time, and to guarantee the life of the magneto-optical recording medium to be 10 years or longer. In FIG. 2 and FIG. 2, a silicone-based or fluorine-based release agent is coated on the contact surface between the substrate and the substrate-holding plate, or a Teflon material is attached to the substrate-holding plate. By lowering the hardness of the contact surface between the substrate and the holding plate of the substrate, increasing the lubricity, and smoothing the revolution of the substrate, the center masking cap in FIG. The weight of the material is made heavier than the center masking cap, and the revolving transparent plastic substrate of the substrate is balanced so that force is applied to the tray side, that is, the back side of the substrate. It is possible to manufacture a magneto-optical recording medium that is not scratched on the surface and has an excellent appearance, and it is the magnetic characteristics of the magneto-optical recording layer over the entire area of the magneto-optical recording medium that has been a problem in the past. Coercive force and Faraday rotation angle are uniform, and 50 dB CNR is a standard for practical use.
Was also uniformly secured over the entire area of the magneto-optical recording medium.

次に、比較例として、第6図及び第7図に従来と本発明
による薄膜の製造装置における基板保持機構によって作
製した光磁気記録媒体の特性の違いを示す。以下、順を
追って説明する。第6図は、光磁気記録媒体のビット誤
り率の媒体上の分布を示す図である。37は、本発明の薄
膜の製造装置における基板保持機構によって作製した光
磁気記録媒体のビット誤り率を示し、38は、従来の薄膜
の製造装置における基板保持機構によって作製した光磁
気記録媒体のビット誤り率を示す。従来技術では、38に
示されているように、透明プラスチック基板と基板の保
持板が基板の外周部分で接触することで生じたダスト
と、基板上もしくは、薄膜上のすり傷によって光磁気記
録媒体の外周部分のビット誤り率が劣化していたが、本
発明により、光磁気記録媒体の全領域にわたって均一で
良好なビット誤り率が得られた。第7図は、光磁気記録
媒体の磁気特性である保磁力Hcの媒体上の分布経時変化
を示す図である。39が、本発明の薄膜の製造装置におけ
る基板保持機構によって作製した光磁気記録媒体を60℃
90%RHの加速試験で500時間経過した時の光磁気記録媒
体保磁力の媒体上の分布を示す。媒体の全領域にわたっ
て保磁力の経時変化がみられないことがわかる。40から
42までが、従来の薄膜の製造装置における基板保持機構
によって作製した光磁気記録媒体の保磁力の媒体上の分
布の経時変化を示す。40が、60℃90%RHの加速試験で24
時間、41が50時間、35が500時間経過した時の光磁気記
録媒体の保磁力の媒体上の分布を示す。光磁気記録層の
特性が、基板の外周部分から内周方向へ劣化進行してい
るのがわかる。従来技術では、透明プラスチック基板と
基板の保持板が、基板の外周部分で接触することで、薄
膜上の傷の部分から主に透明プラスチック基板を通して
の外部水分が混入し、光磁気記録層が酸化劣化していた
が、本発明によって媒体の全領域にわたって特性の劣化
しない光磁気記録媒体が得られた。
Next, as comparative examples, FIGS. 6 and 7 show differences in characteristics of magneto-optical recording media manufactured by the substrate holding mechanism in the conventional thin film manufacturing apparatus and the present invention. Hereinafter, description will be made step by step. FIG. 6 is a diagram showing the distribution of the bit error rate of the magneto-optical recording medium on the medium. 37 shows the bit error rate of the magneto-optical recording medium produced by the substrate holding mechanism in the thin film manufacturing apparatus of the present invention, and 38 shows the bit error rate of the magneto-optical recording medium produced by the substrate holding mechanism in the conventional thin film manufacturing apparatus. Indicates the error rate. In the prior art, as shown in 38, the magneto-optical recording medium is produced by dust generated by the contact between the transparent plastic substrate and the holding plate of the substrate at the outer peripheral portion of the substrate and scratches on the substrate or the thin film. Although the bit error rate in the outer peripheral portion of the above was deteriorated, the present invention provided a uniform and good bit error rate over the entire area of the magneto-optical recording medium. FIG. 7 is a diagram showing changes over time in the distribution of the coercive force Hc, which is the magnetic characteristic of the magneto-optical recording medium, on the medium. 39 shows the magneto-optical recording medium manufactured by the substrate holding mechanism in the thin film manufacturing apparatus of the present invention at 60 ° C.
The distribution of the coercive force on the magneto-optical recording medium after 500 hours in the 90% RH acceleration test is shown. It can be seen that the coercive force does not change with time over the entire area of the medium. From 40
Up to 42, changes with time of the distribution of the coercive force of the magneto-optical recording medium manufactured by the substrate holding mechanism in the conventional thin film manufacturing apparatus on the medium are shown. 40 is 24 in the accelerated test of 60 ℃ 90% RH
The distribution of the coercive force of the magneto-optical recording medium on the medium is shown when the time, 41 is 50 hours, and 35 is 500 hours. It can be seen that the characteristics of the magneto-optical recording layer deteriorate and progress from the outer peripheral portion of the substrate toward the inner peripheral direction. In the conventional technique, the transparent plastic substrate and the holding plate of the substrate come into contact with each other at the outer peripheral portion of the substrate, so that external moisture mainly enters through the transparent plastic substrate from the scratched portion on the thin film, and the magneto-optical recording layer is oxidized. Although deteriorated, the present invention provides a magneto-optical recording medium whose characteristics are not deteriorated over the entire area of the medium.

なお、本実施例においては、ファラディ方式カー方式の
どちらの光磁気記録媒体を製造する場合でも、本発明は
有効なものである。また、保護層に窒化アルミニウムシ
リコンを用いたが、SiO・SiO2・TiO2・A12O3・MgO等が酸
化物、A1N・SiNの窒化物、ZnS・CdS等の硫化物、A1SiO
N,Cr,Ti等でも本発明は、有効である。光磁気記録層
も、TbFeCo・GdFeCo・GdTbFeCo・NdDyFeCo・NdGdFeCo・
SmDyFeCo等のRE−TM系なら、何らさしつかえない。ま
た、本発明は、薄膜を作製する時に従来法で、組成分布
が出るものであれば有効なものである。特に、CoZrNb・
CoZr等の非晶質軟磁性膜を作製する時に有効なものであ
る。また、第1図から第3図において、ターゲットから
のスパッタ時の輻射熱により、透明プラスチック基板の
温度上昇を防止するため設けた透明プラスチック基板の
裏側の空洞部分は、なくても何らさしつかえないもので
ある。
In this embodiment, the present invention is effective regardless of which of the Faraday type Kerr type magneto-optical recording media is manufactured. Also, aluminum silicon nitride was used for the protective layer, but SiO, SiO 2 , TiO 2 , A1 2 O 3 , MgO, etc. are oxides, A1N, SiN nitrides, ZnS, CdS, etc. sulfides, A1SiO
The present invention is also effective for N, Cr, Ti and the like. The magneto-optical recording layer is also made of TbFeCo / GdFeCo / GdTbFeCo / NdDyFeCo / NdGdFeCo /
With a RE-TM system such as SmDyFeCo, there is no problem. Further, the present invention is effective as long as the composition distribution is obtained by the conventional method when a thin film is produced. In particular, CoZrNb
It is effective when forming an amorphous soft magnetic film such as CoZr. In addition, in FIG. 1 to FIG. 3, the hollow portion on the back side of the transparent plastic substrate provided to prevent the temperature rise of the transparent plastic substrate due to the radiant heat at the time of sputtering from the target can be used without any problem. is there.

〔発明の効果〕〔The invention's effect〕

以上に述べたように、本発明によれば、基板上に単層及
び多層成膜する薄膜の製造装置における基板保持機構に
おいて、以下の少なくとも1つの構成を有する。
As described above, according to the present invention, a substrate holding mechanism in a thin film manufacturing apparatus for forming a single layer and a multilayer film on a substrate has at least one of the following configurations.

(a)基板を自公転さるために、基板よりも大きい内径
と厚みをもった円筒形の空隙が設けられた基板の保持板
の、基板との接触面つまり、外周マスキング部分に、シ
リコーン系もしくは、フッ素系離型剤をコーティングも
しくは、テフロン材を取り付けた基板の保持板。
(A) In order to orbit the substrate on its own axis, a silicone-based material is used on the contact surface with the substrate of the holding plate of the substrate provided with a cylindrical void having a larger inner diameter and thickness than the substrate, that is, the outer peripheral masking portion. , A substrate holding plate coated with a fluorine-based release agent or attached with a Teflon material.

(b)基板の内周部分を、センターマスキングキャップ
と、基板の裏当て材とのねじ止めで、マスキングするた
めの基板の裏当て材を、センターマスキングキャップよ
りも重くした裏当て材。
(B) A backing material in which the inner peripheral portion of the substrate is screwed to the center masking cap and the backing material of the substrate to make the backing material of the substrate for masking heavier than the center masking cap.

機構を設けた薄膜の製造装置における基板保持構成を用
いて、基板上もしくは、薄膜上に傷のつかない光磁気記
録媒体を製造したことにより、従来法と比較して、光磁
気記録媒体の外観性の向上、媒体の外周部分の初期特性
向上による媒体の面内分布がなくなり、量産性、寿命と
信頼性の向上などに多大の効果を有するものである。
By using the substrate holding structure in the thin-film manufacturing apparatus provided with the mechanism, a magneto-optical recording medium that is not scratched on the substrate or on the thin film was manufactured. The in-plane distribution of the medium disappears due to the improvement of the magnetic properties and the initial characteristics of the outer peripheral portion of the medium, which has a great effect on the mass productivity, the improvement of the life and the reliability, and the like.

【図面の簡単な説明】[Brief description of drawings]

第1図から第3図は、本発明の実施例における基板保持
機構を用いて、透明プラスチック基板をスパッタ室に一
度に多数枚、収容した時の断面模式図。 第4図は、従来の光磁気記録媒体の保護層もしくは、光
磁気記録層を成膜するスパッタ室の断面模式図。 第5図は、本発明の薄膜の製造装置における基板保持機
構によって作製した最終的な光磁気記録媒体の断面図。 第6図は、光磁気記録媒体のビット誤り率の媒体上の分
布を示す図。 第7図は、光磁気記録媒体の磁気特性である保磁力Hcの
媒体上の分布の経時変化を示す図。 1.垂直軸回転するトレー。 2.基板の保持板。 3.シリコーン系もしくは、フッ素系離型剤。 4.透明プラスチック基板。 5.センターマスキングキャップ 6.透明プラスチック基板の裏側に設けた空洞部分。 7.ターゲット。 8.1と同じ。 9.2と同じ。 10.テフロン材。 11.4と同じ。 12.5と同じ。 13.6と同じ。 14.7と同じ。 15.1と同じ。 16.2と同じ。 17.センターマスキングキャップの裏当て部分。 18.センターマスキングキャップ。 19.4と同じ。 20.6と同じ。 21.7と同じ。 22.スパッタ室。 23.垂直軸回転するトレー。 24.基板の保持板。 25.基板と基板の保持板との空隙。 26.4と同じ。 27.5と同じ。 28.6と同じ。 29.7と同じ。 30.案内溝付であるポリカーボネート。 31.1000Åの膜厚である窒化アルミニウムシリコン膜。 32.400Åの膜厚であるNdDyFeCoTi膜。 33.31と同じ。 34.900Åの膜厚である窒化アルミニウムシリコン膜。 35.案内溝なしのポリカーボネート。 36.UV硬化樹脂層。 37.本発明の薄膜の製造装置における基板保持機構によ
って作製した光磁気記録媒体のビット誤り率。 38.従来の薄膜の製造装置における基板保持機構によっ
て作製した光磁気記録媒体のビット誤り率。 39.本発明の薄膜の製造装置における基板保持機構によ
って作製した光磁気記録媒体を60℃90%RHの加速試験で
500時間経過した時の保磁力の媒体上の分布。 40.従来の薄膜の製造測置における基板保持機構によっ
て作製した光磁気記録媒体を60℃90%RHの加速試験で24
時間経過した時の保磁力の媒体上の分布。 34.従来の薄膜の製造装置における基板保持機構によっ
て作製した光磁気記録媒体を60℃90%RHの加速試験で50
時間経過した時の保磁力の媒体上の分布。 34.従来の薄膜の製造装置における基板保持機構によっ
て作製した光磁気記録媒体を60℃90%RHの加速試験で50
0時間経過した時の保磁力の媒体上の分布。
1 to 3 are schematic cross-sectional views when a large number of transparent plastic substrates are accommodated in a sputtering chamber at a time by using the substrate holding mechanism according to the embodiment of the present invention. FIG. 4 is a schematic sectional view of a protective layer of a conventional magneto-optical recording medium or a sputtering chamber for forming the magneto-optical recording layer. FIG. 5 is a sectional view of the final magneto-optical recording medium manufactured by the substrate holding mechanism in the thin film manufacturing apparatus of the present invention. FIG. 6 is a diagram showing the distribution of the bit error rate of the magneto-optical recording medium on the medium. FIG. 7 is a diagram showing the change over time in the distribution of the coercive force Hc, which is the magnetic characteristic of the magneto-optical recording medium, on the medium. 1. A tray that rotates vertically. 2. Board holding plate. 3. Silicone-based or fluorine-based release agent. 4. Transparent plastic substrate. 5. Center masking cap 6. Hollow part provided on the back side of the transparent plastic substrate. 7. Target. Same as 8.1. Same as 9.2. 10. Teflon material. Same as 11.4. Same as 12.5. Same as 13.6. Same as 14.7. Same as 15.1. Same as 16.2. 17. The backing part of the center masking cap. 18. Center masking cap. Same as 19.4. Same as 20.6. Same as 21.7. 22. Sputter room. 23. Vertical axis rotating tray. 24. Board holding plate. 25. The space between the board and the board holding plate. Same as 26.4. Same as 27.5. Same as 28.6. Same as 29.7. 30. Polycarbonate with guide groove. Aluminum nitride silicon film with a film thickness of 31.1000Å. NdDyFeCoTi film with a film thickness of 32.400Å. Same as 33.31. Aluminum silicon nitride film with a thickness of 34.900Å. 35. Polycarbonate without guide groove. 36. UV curable resin layer. 37. Bit error rate of the magneto-optical recording medium manufactured by the substrate holding mechanism in the thin film manufacturing apparatus of the present invention. 38. Bit error rate of a magneto-optical recording medium manufactured by a substrate holding mechanism in a conventional thin film manufacturing apparatus. 39. The magneto-optical recording medium manufactured by the substrate holding mechanism in the thin film manufacturing apparatus of the present invention was subjected to an acceleration test at 60 ° C. and 90% RH.
Distribution of coercive force on the medium after 500 hours. 40. The magneto-optical recording medium manufactured by the substrate holding mechanism in the conventional thin film manufacturing and measurement was subjected to the accelerated test at 60 ° C and 90% RH for 24 hours.
Distribution of coercive force on medium over time. 34. The magneto-optical recording medium manufactured by the substrate holding mechanism in the conventional thin-film manufacturing equipment was subjected to the acceleration test at 60 ° C and 90% RH.
Distribution of coercive force on medium over time. 34. The magneto-optical recording medium manufactured by the substrate holding mechanism in the conventional thin-film manufacturing equipment was subjected to the acceleration test at 60 ° C and 90% RH.
Distribution of coercive force on medium after 0 hours.

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】基板上に、単層及び、多層成膜する薄膜の
製造装置における基板保持機構において、少なくとも (a)前記基板を自公転させるために、前記基板よりも
大きい内径と厚みをもった円筒形の空隙が設けられた前
記基板の保持板の、前記基板との接触面つまり、外周マ
スキング部分に、シリコーン系もしくは、フッ素系離型
剤をコーティング、もしくは、テフロン材を取り付けた
前記基板の保持板。 (b)前記基板の内周部分を、センターマスキングキャ
ップと、前記基板の裏当て材とのねじ止めでマスキング
するための前記基板の裏当て材を、前記センターマスキ
ングキャップよりも重くした前記裏当て材の構成を有す
る機構を設けたことを特徴とする薄膜の製造装置におけ
る基板の保持機構。
1. A substrate holding mechanism in a thin film manufacturing apparatus for depositing a single layer and a multi-layer on a substrate, wherein at least (a) the substrate has an inner diameter and a thickness larger than that of the substrate so as to orbit the substrate. The substrate having the cylindrical holding plate provided with a hollow space, the contact surface with the substrate, that is, the outer peripheral masking portion is coated with a silicone-based or fluorine-based release agent, or a Teflon material is attached. Holding plate. (B) The backing, wherein the backing material of the substrate for masking the inner peripheral portion of the substrate by screwing the center masking cap and the backing material of the substrate is heavier than the center masking cap. A substrate holding mechanism in a thin-film manufacturing apparatus, characterized in that a mechanism having a material structure is provided.
JP17314587A 1987-07-10 1987-07-10 Substrate holding mechanism in thin film manufacturing equipment Expired - Lifetime JPH0733574B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17314587A JPH0733574B2 (en) 1987-07-10 1987-07-10 Substrate holding mechanism in thin film manufacturing equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17314587A JPH0733574B2 (en) 1987-07-10 1987-07-10 Substrate holding mechanism in thin film manufacturing equipment

Publications (2)

Publication Number Publication Date
JPS6417865A JPS6417865A (en) 1989-01-20
JPH0733574B2 true JPH0733574B2 (en) 1995-04-12

Family

ID=15954944

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17314587A Expired - Lifetime JPH0733574B2 (en) 1987-07-10 1987-07-10 Substrate holding mechanism in thin film manufacturing equipment

Country Status (1)

Country Link
JP (1) JPH0733574B2 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0823068B2 (en) * 1988-08-19 1996-03-06 松下電器産業株式会社 Thin film forming equipment
JPH1021586A (en) * 1996-07-02 1998-01-23 Sony Corp Dc sputtering device
EP1249348B1 (en) 1999-12-28 2005-06-29 Ricoh Printing Systems, Ltd. Line-scanning type ink jet recorder
FR3022808A1 (en) * 2014-06-26 2016-01-01 Valeo Vision SURFACE TREATMENT MASK OF A WORKPIECE AND METHOD OF MANUFACTURING SUCH A MASK

Also Published As

Publication number Publication date
JPS6417865A (en) 1989-01-20

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