JPH07278803A - Vacuum vapor deposition device - Google Patents

Vacuum vapor deposition device

Info

Publication number
JPH07278803A
JPH07278803A JP6946994A JP6946994A JPH07278803A JP H07278803 A JPH07278803 A JP H07278803A JP 6946994 A JP6946994 A JP 6946994A JP 6946994 A JP6946994 A JP 6946994A JP H07278803 A JPH07278803 A JP H07278803A
Authority
JP
Japan
Prior art keywords
vapor deposition
electron beam
substrate
vacuum vapor
polymer substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6946994A
Other languages
Japanese (ja)
Inventor
Yasuhiro Nishizawa
康弘 西澤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP6946994A priority Critical patent/JPH07278803A/en
Publication of JPH07278803A publication Critical patent/JPH07278803A/en
Pending legal-status Critical Current

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  • Physical Vapour Deposition (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)

Abstract

PURPOSE:To provide such a winding-type vacuum vapor deposition device that variation of characteristics in the width direction of a substrate is decreased and excellent quality and production yield can be obtd. CONSTITUTION:This device is equipped with a mechanism to carry a polymer substrate, a vapor source, and a mechanism to scan electron beams 6 in the vacuum chamber. A thin film is continuously formed on a polymer substrate by scanning electron beams 6 while changes in the indident angle of electron beams to the vapor source are suppressed to within 5 degrees and by heating the vapor source.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、高分子基板上に薄膜を
連続形成する真空蒸着装置に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a vacuum vapor deposition apparatus for continuously forming a thin film on a polymer substrate.

【0002】[0002]

【従来の技術】近年、省資源、小型化などの時代要請が
あり薄膜の応用範囲が広がっている。
2. Description of the Related Art In recent years, the application range of thin films has been expanding due to the demand of the times such as resource saving and miniaturization.

【0003】特に、デジタル記録においては、信号量の
増大により高密度記録化が要求され、斜方蒸着等で磁気
的に異方性を付与した金属薄膜テープが注目されてき
た。
Particularly in digital recording, high density recording is required due to an increase in signal amount, and a metal thin film tape magnetically anisotropic by oblique vapor deposition or the like has attracted attention.

【0004】以下に従来の蒸着装置について説明する。
図5は従来の真空蒸着装置の構造を示すものである。図
5において、1は高分子基板、2は耐火容器、3は蒸発
材料、4は回転支持体、5は電子銃、6は電子ビーム、
7は蒸気流、8はマスクである。
A conventional vapor deposition apparatus will be described below.
FIG. 5 shows the structure of a conventional vacuum vapor deposition apparatus. In FIG. 5, 1 is a polymer substrate, 2 is a refractory container, 3 is an evaporation material, 4 is a rotary support, 5 is an electron gun, 6 is an electron beam,
Reference numeral 7 is a vapor flow, and 8 is a mask.

【0005】以上のように構成された真空蒸着装置につ
いて、以下その動作について説明する。まず、加速され
た電子ビーム6により蒸発材料3を加熱し蒸気流7を生
じせしめる。この蒸気は磁気テープの製造時によく用い
られる基板1への入射角度を限定するマスク8によりさ
えぎられ移動する基板1に一部付着する。また、高分子
基板1に付着した薄膜の均一性を向上させるために耐火
容器2はほぼ高分子基板1と同じ幅を有し、電子ビーム
6を電界、磁界等を用い耐火容器内の蒸発材料上を走査
させる。図6は走査する電子ビームの軌跡を上から見た
ものである。
The operation of the vacuum vapor deposition apparatus configured as described above will be described below. First, the vaporized material 3 is heated by the accelerated electron beam 6 to generate a vapor flow 7. This vapor partially adheres to the moving substrate 1 which is blocked by the mask 8 which limits the incident angle to the substrate 1 which is often used in the manufacture of magnetic tape. Further, in order to improve the uniformity of the thin film adhered to the polymer substrate 1, the refractory container 2 has substantially the same width as the polymer substrate 1, and the electron beam 6 is used for the electric field and the magnetic field to evaporate the evaporation material in the refractory container. Scan the top. FIG. 6 is a top view of the trajectory of the scanning electron beam.

【0006】[0006]

【発明が解決しようとする課題】しかしながら上記の従
来の構成では、基板幅方向での蒸気流の入射角が基板の
場所(幅方向)によって異なるために基板搬送方向の磁
気特性と基板幅方向の磁気特性の関係が基板の場所(幅
方向)によって異なり、再生出力のバランスが基板の場
所によって異なるという問題を有していた。(公知のヘ
リカルスキャン型VTRでは、トラック角度とヘッドの
アジマス角とにより電磁変換特性がヘッド毎に異なる) 本発明は上記従来の問題点を解決するもので、幅方向で
品質の安定した歩留まりの良い巻取り真空蒸着装置を提
供することを目的とする。
However, in the above conventional structure, since the incident angle of the vapor flow in the substrate width direction differs depending on the location (width direction) of the substrate, the magnetic characteristics in the substrate transport direction and the substrate width direction. There is a problem in that the relationship of magnetic characteristics differs depending on the location (width direction) of the substrate, and the balance of reproduction output varies depending on the location of the substrate. (In the known helical scan VTR, the electromagnetic conversion characteristics are different for each head depending on the track angle and the azimuth angle of the head.) The present invention solves the above-mentioned conventional problems, and a stable yield of quality in the width direction is obtained. It is an object to provide a good winding vacuum deposition apparatus.

【0007】[0007]

【課題を解決するための手段】この目的を達成するため
に本発明の真空蒸着装置は、真空槽内に、高分子基板を
搬送する機構、蒸発源、電子ビームを走査する機構を備
え、蒸発源への電子ビームの入射角が幅方向において5
度以内になるように電子ビームを走査しながら蒸発源を
加熱し前記高分子基板上に薄膜を連続形成する構成を有
している。
In order to achieve this object, a vacuum vapor deposition apparatus of the present invention comprises a mechanism for conveying a polymer substrate, an evaporation source, and a mechanism for scanning an electron beam in a vacuum chamber. The incident angle of the electron beam on the source is 5 in the width direction.
The evaporation source is heated while scanning the electron beam so that the temperature is within the range to continuously form a thin film on the polymer substrate.

【0008】[0008]

【作用】この構成によって、蒸気流の基板への入射角
(幅方向)がほぼ一定になり電磁変換特性が基板の幅方
向でほぼ一定になり歩留まりの良い蒸着装置が得られ
る。
With this configuration, the incident angle (width direction) of the vapor flow on the substrate becomes substantially constant, the electromagnetic conversion characteristics become substantially constant in the width direction of the substrate, and a vapor deposition apparatus with a good yield can be obtained.

【0009】[0009]

【実施例】以下本発明の一実施例について、図面を参照
しながら説明する。
DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings.

【0010】図1は本発明の第一の実施例の真空蒸着装
置の構造を示すものである。図1において、1は高分子
基板、2は耐火容器、3は蒸発材料、4は回転支持体、
5は電子銃、6は電子ビーム、7は蒸気流、8はマスク
である。図2は走査する電子ビームの軌跡を上から見た
ものである。
FIG. 1 shows the structure of a vacuum vapor deposition apparatus according to the first embodiment of the present invention. In FIG. 1, 1 is a polymer substrate, 2 is a refractory container, 3 is an evaporation material, 4 is a rotary support,
5 is an electron gun, 6 is an electron beam, 7 is a vapor flow, and 8 is a mask. FIG. 2 is a top view of the trajectory of the scanning electron beam.

【0011】以上のように構成された真空蒸着装置につ
いて、その動作を説明する。まず、電子銃5より発し加
速された電子ビーム6は蒸発材料3を加熱し蒸気流7を
生じせしめる。この蒸気は磁気テープの製造時によく用
いられる基板1への入射角度を限定するマスク8により
さえぎられ回転支持体4に沿って移動する基板1に付着
する。また電子ビーム6は公知の電界や磁界を用いた偏
向により蒸発材料3上を走査する。この時、上面から見
たときの電子ビームの蒸発材料への入射角θは電子銃と
蒸発源の距離及び電子ビームの走査幅によって決まる。
The operation of the vacuum vapor deposition apparatus constructed as above will be described. First, the electron beam 6 emitted from the electron gun 5 and accelerated accelerates the vaporized material 3 to generate a vapor flow 7. This vapor adheres to the substrate 1 which moves along the rotary support 4 and is blocked by the mask 8 which limits the angle of incidence on the substrate 1 which is often used in the manufacture of magnetic tape. The electron beam 6 scans the evaporation material 3 by deflection using a known electric field or magnetic field. At this time, the incident angle θ of the electron beam on the evaporation material when viewed from the upper surface is determined by the distance between the electron gun and the evaporation source and the scanning width of the electron beam.

【0012】実験は、電子銃と蒸発源の距離、電子ビー
ムの走査幅を変えて高密度記録に適した蒸着磁気テープ
を試作し、改造8ミリVTRで、基板幅方向の電磁変換
特性のばらつきを調べた。実験条件とばらつきを0.5
dBとしたときの幅方向の歩留まりを(表1)に示す。
In the experiment, a vapor-deposited magnetic tape suitable for high-density recording was manufactured by changing the distance between the electron gun and the evaporation source and the scanning width of the electron beam, and a modified 8 mm VTR was used to vary the electromagnetic conversion characteristics in the substrate width direction. I checked. Experimental condition and variation 0.5
The yield in the width direction when dB is shown in (Table 1).

【0013】[0013]

【表1】 [Table 1]

【0014】この表1から明らかなように、電子銃と蒸
発源の距離及び電子ビームの走査幅を適切に選択しビー
ム入射角度の違いを5度以内にすることにより、幅方向
の電磁変換特性の歩留まりの点で優れた効果が得られ
る。
As is clear from Table 1, the electromagnetic conversion characteristics in the width direction can be obtained by appropriately selecting the distance between the electron gun and the evaporation source and the scanning width of the electron beam so that the difference in beam incident angle is within 5 degrees. An excellent effect can be obtained in terms of yield.

【0015】次に本発明の第2の実施例について図面を
参照しながら説明する。図3は本発明の第2の実施例を
示す真空蒸着装置の構成図である。図3において、図1
の構成と異なるのは電子ビームの軌跡を制御する第2の
偏向機構9が設けられている点である。第2の偏向機構
も公知の電界、磁界を用いる方法より適宜選択される。
図4は走査する電子ビームの軌跡を上から見たものであ
る。
Next, a second embodiment of the present invention will be described with reference to the drawings. FIG. 3 is a configuration diagram of a vacuum vapor deposition device showing a second embodiment of the present invention. In FIG. 3, FIG.
The configuration is different from that of (1) in that a second deflection mechanism 9 for controlling the trajectory of the electron beam is provided. The second deflection mechanism is also appropriately selected from the known methods using an electric field and a magnetic field.
FIG. 4 is a top view of the trajectory of the scanning electron beam.

【0016】以上のように構成された真空蒸着装置につ
いて、その動作を説明する。まず、電子銃5より発し加
熱された電子ビーム6は蒸発材料3を加熱し蒸気流7を
生じせしめる。この蒸気は電磁テープの製造時によく用
いられる基板1への入射角度を限定するマスク8により
さえぎられ回転支持体4に沿って移動する基板1に付着
する。また電子ビーム6は公知の電界や磁界を用いた偏
向により蒸発材料3上を走査する。この時、上面から見
たときの電子ビームの蒸発材料への入射角は一定になる
ように第2の偏向機構9によって適切に制御される。
The operation of the vacuum vapor deposition apparatus constructed as above will be described. First, the electron beam 6 emitted from the electron gun 5 and heated heats the evaporation material 3 to generate a vapor flow 7. This vapor adheres to the substrate 1 which moves along the rotary support 4 and is blocked by the mask 8 which limits the angle of incidence on the substrate 1 which is often used in the production of electromagnetic tape. The electron beam 6 scans the evaporation material 3 by deflection using a known electric field or magnetic field. At this time, the second deflecting mechanism 9 appropriately controls the incident angle of the electron beam to the evaporation material when viewed from the upper surface.

【0017】本実施例による真空蒸着装置と従来の真空
蒸着装置の比較を高密度記録に適した蒸着磁気テープを
試作することにより比較した。電子銃と蒸発源の距離は
1500mm、電子ビームの走査幅は、500mmとし
た。結果を(表2)に示す。
A comparison between the vacuum vapor deposition apparatus according to this embodiment and the conventional vacuum vapor deposition apparatus was made by making a trial vapor deposition magnetic tape suitable for high density recording. The distance between the electron gun and the evaporation source was 1500 mm, and the scanning width of the electron beam was 500 mm. The results are shown in (Table 2).

【0018】[0018]

【表2】 [Table 2]

【0019】この表2から明らかなように、電子ビーム
を走査するときに適切に偏向をかけ蒸発源への入射角を
一定にすることにより、幅方向の電磁変換特性の歩留ま
りの点で優れた効果が得られる。また、電子銃と蒸発源
の距離を小さくでき装置の小型化が図れた。
As is clear from Table 2, when the electron beam is scanned, the deflection is appropriately performed to make the incident angle to the evaporation source constant, which is excellent in the yield of the electromagnetic conversion characteristics in the width direction. The effect is obtained. Further, the distance between the electron gun and the evaporation source can be reduced, and the device can be downsized.

【0020】[0020]

【発明の効果】以上のように本発明は、真空槽内に、高
分子基板を搬送する機構、蒸発源、電子ビームを走査す
る機構を備え、電子ビームを走査しながら蒸発源を加熱
し前記高分子基板上に薄膜を連続形成する真空蒸着装置
において、蒸発源への電子ビームの入射角変化が幅方向
において5度以内にする事により幅方向の電磁変換特性
の歩留まりの点で優れた真空蒸着装置を実現できるもの
である。
As described above, according to the present invention, a mechanism for conveying a polymer substrate, an evaporation source, and a mechanism for scanning an electron beam are provided in a vacuum chamber, and the evaporation source is heated while scanning the electron beam. In a vacuum vapor deposition apparatus for continuously forming a thin film on a polymer substrate, by changing the incident angle of an electron beam to an evaporation source within 5 degrees in the width direction, an excellent vacuum in terms of yield of electromagnetic conversion characteristics in the width direction is obtained. It is possible to realize a vapor deposition device.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の第一の実施例における真空蒸着装置の
構成図
FIG. 1 is a configuration diagram of a vacuum vapor deposition device according to a first embodiment of the present invention.

【図2】本発明の第一の実施例における真空蒸着装置の
電子ビームの軌跡の上面図
FIG. 2 is a top view of the trajectory of the electron beam of the vacuum vapor deposition device in the first embodiment of the present invention.

【図3】本発明の第二の実施例における真空蒸着装置の
構成図
FIG. 3 is a configuration diagram of a vacuum vapor deposition device according to a second embodiment of the present invention.

【図4】本発明の第二の実施例における真空蒸着装置の
電子ビームの軌跡の上面図
FIG. 4 is a top view of the trajectory of an electron beam in a vacuum vapor deposition device according to a second embodiment of the present invention.

【図5】従来の真空蒸着装置の構成図FIG. 5 is a configuration diagram of a conventional vacuum vapor deposition device.

【図6】従来の真空蒸着装置の電子ビームの軌跡の上面
FIG. 6 is a top view of the trajectory of an electron beam in a conventional vacuum vapor deposition device.

【符号の説明】[Explanation of symbols]

1 高分子基板 2 耐火容器 3 蒸発材料 4 回転支持体 5 電子銃 6 電子ビーム 7 蒸気流 8 マスク 9 第二の偏向機構 1 Polymer Substrate 2 Refractory Container 3 Evaporation Material 4 Rotation Support 5 Electron Gun 6 Electron Beam 7 Vapor Flow 8 Mask 9 Second Deflection Mechanism

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】真空槽内に、高分子基板を搬送する機構、
蒸発源、電子ビームを走査する機構を備え、電子ビーム
を走査しながら蒸発源を加熱し前記高分子基板上に薄膜
を連続形成する真空蒸着装置において、蒸発源への電子
ビームの入射角変化が幅方向において5度以内であるこ
とを特徴とする真空蒸着装置。
1. A mechanism for conveying a polymer substrate into a vacuum chamber,
In a vacuum vapor deposition apparatus having an evaporation source and a mechanism for scanning an electron beam, heating the evaporation source while scanning the electron beam to continuously form a thin film on the polymer substrate, the incident angle of the electron beam on the evaporation source changes. A vacuum vapor deposition apparatus characterized in that the width is within 5 degrees.
JP6946994A 1994-04-07 1994-04-07 Vacuum vapor deposition device Pending JPH07278803A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6946994A JPH07278803A (en) 1994-04-07 1994-04-07 Vacuum vapor deposition device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6946994A JPH07278803A (en) 1994-04-07 1994-04-07 Vacuum vapor deposition device

Publications (1)

Publication Number Publication Date
JPH07278803A true JPH07278803A (en) 1995-10-24

Family

ID=13403568

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6946994A Pending JPH07278803A (en) 1994-04-07 1994-04-07 Vacuum vapor deposition device

Country Status (1)

Country Link
JP (1) JPH07278803A (en)

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