JPH07263674A - 電界効果型半導体装置とその製造方法 - Google Patents

電界効果型半導体装置とその製造方法

Info

Publication number
JPH07263674A
JPH07263674A JP6046674A JP4667494A JPH07263674A JP H07263674 A JPH07263674 A JP H07263674A JP 6046674 A JP6046674 A JP 6046674A JP 4667494 A JP4667494 A JP 4667494A JP H07263674 A JPH07263674 A JP H07263674A
Authority
JP
Japan
Prior art keywords
tungsten silicide
layer
semiconductor device
field effect
silicon layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP6046674A
Other languages
English (en)
Japanese (ja)
Inventor
Hiroyuki Ota
裕之 大田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP6046674A priority Critical patent/JPH07263674A/ja
Priority to KR1019950005041A priority patent/KR0185461B1/ko
Priority to TW084104516A priority patent/TW270233B/zh
Publication of JPH07263674A publication Critical patent/JPH07263674A/ja
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/661—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation
    • H10D64/662—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation the conductor further comprising additional layers, e.g. multiple silicon layers having different crystal structures
    • H10D64/663—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation the conductor further comprising additional layers, e.g. multiple silicon layers having different crystal structures the additional layers comprising a silicide layer contacting the layer of silicon, e.g. polycide gates

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP6046674A 1994-03-17 1994-03-17 電界効果型半導体装置とその製造方法 Withdrawn JPH07263674A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP6046674A JPH07263674A (ja) 1994-03-17 1994-03-17 電界効果型半導体装置とその製造方法
KR1019950005041A KR0185461B1 (ko) 1994-03-17 1995-03-11 폴리사이드 구조의 전극을 갖는 반도체장치 및 그 제조방법
TW084104516A TW270233B (enrdf_load_stackoverflow) 1994-03-17 1995-05-06

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6046674A JPH07263674A (ja) 1994-03-17 1994-03-17 電界効果型半導体装置とその製造方法

Publications (1)

Publication Number Publication Date
JPH07263674A true JPH07263674A (ja) 1995-10-13

Family

ID=12753928

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6046674A Withdrawn JPH07263674A (ja) 1994-03-17 1994-03-17 電界効果型半導体装置とその製造方法

Country Status (3)

Country Link
JP (1) JPH07263674A (enrdf_load_stackoverflow)
KR (1) KR0185461B1 (enrdf_load_stackoverflow)
TW (1) TW270233B (enrdf_load_stackoverflow)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5958508A (en) * 1997-03-31 1999-09-28 Motorlola, Inc. Process for forming a semiconductor device
WO2001054177A1 (en) * 2000-01-21 2001-07-26 Advanced Micro Devices, Inc. Tungsten gate electrode method and device
US6274472B1 (en) 2000-01-21 2001-08-14 Advanced Micro Devices, Inc. Tungsten interconnect method
US6277744B1 (en) 2000-01-21 2001-08-21 Advanced Micro Devices, Inc. Two-level silane nucleation for blanket tungsten deposition
KR100292278B1 (ko) * 1997-05-02 2001-09-17 다니구찌 이찌로오, 기타오카 다카시 반도체장치및그제조방법
KR100745604B1 (ko) * 2006-07-03 2007-08-02 삼성전자주식회사 반도체 소자 및 그 형성 방법

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5958508A (en) * 1997-03-31 1999-09-28 Motorlola, Inc. Process for forming a semiconductor device
KR100292278B1 (ko) * 1997-05-02 2001-09-17 다니구찌 이찌로오, 기타오카 다카시 반도체장치및그제조방법
WO2001054177A1 (en) * 2000-01-21 2001-07-26 Advanced Micro Devices, Inc. Tungsten gate electrode method and device
US6274472B1 (en) 2000-01-21 2001-08-14 Advanced Micro Devices, Inc. Tungsten interconnect method
US6277744B1 (en) 2000-01-21 2001-08-21 Advanced Micro Devices, Inc. Two-level silane nucleation for blanket tungsten deposition
US6284636B1 (en) 2000-01-21 2001-09-04 Advanced Micro Devices, Inc. Tungsten gate method and apparatus
KR100745604B1 (ko) * 2006-07-03 2007-08-02 삼성전자주식회사 반도체 소자 및 그 형성 방법

Also Published As

Publication number Publication date
KR0185461B1 (ko) 1999-03-20
KR950028175A (ko) 1995-10-18
TW270233B (enrdf_load_stackoverflow) 1996-02-11

Similar Documents

Publication Publication Date Title
US5633522A (en) CMOS transistor with two-layer inverse-T tungsten gate
KR100530401B1 (ko) 저저항 게이트 전극을 구비하는 반도체 장치
US5208472A (en) Double spacer salicide MOS device and method
KR0179677B1 (ko) 반도체장치 및 그 제조방법
US4808544A (en) LDD structure containing conductive layer between gate oxide and sidewall spacer
US20040070036A1 (en) ULSI MOS with high dielectric constant gate insulator
JPS6010773A (ja) １素子型ｆｅｔ−記憶キヤパシタ回路の形成方法
US6335254B1 (en) Methods of forming transistors
US6440868B1 (en) Metal gate with CVD amorphous silicon layer and silicide for CMOS devices and method of making with a replacement gate process
US6589866B1 (en) Metal gate with PVD amorphous silicon layer having implanted dopants for CMOS devices and method of making with a replacement gate process
US20030211682A1 (en) Method for fabricating a gate electrode
US6440867B1 (en) Metal gate with PVD amorphous silicon and silicide for CMOS devices and method of making the same with a replacement gate process
US6383884B1 (en) Method of manufacturing semiconductor device
JPH07263674A (ja) 電界効果型半導体装置とその製造方法
JP2001320045A (ja) Ｍｉｓ型半導体装置の製造方法
US6221760B1 (en) Semiconductor device having a silicide structure
JP4347479B2 (ja) 電界効果トランジスタ
JPH10270380A (ja) 半導体装置
EP0197738A2 (en) Method for manufacturing an LDD semiconductor device
US6011289A (en) Metal oxide stack for flash memory application
JP2790157B2 (ja) 半導体集積回路装置の製造方法
US6495438B1 (en) Titanium polycide gate electrode and method of forming a titanium polycide gate electrode of a semiconductor device
JPH1064898A (ja) 半導体装置の製造方法
JPH08130216A (ja) 半導体装置およびその製造方法
JPH0810726B2 (ja) 半導体装置の製造方法

Legal Events

Date Code Title Description
A300 Application deemed to be withdrawn because no request for examination was validly filed

Free format text: JAPANESE INTERMEDIATE CODE: A300

Effective date: 20010605