TW270233B - - Google Patents
Info
- Publication number
- TW270233B TW270233B TW084104516A TW84104516A TW270233B TW 270233 B TW270233 B TW 270233B TW 084104516 A TW084104516 A TW 084104516A TW 84104516 A TW84104516 A TW 84104516A TW 270233 B TW270233 B TW 270233B
- Authority
- TW
- Taiwan
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/60—Electrodes characterised by their materials
- H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
- H10D64/661—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation
- H10D64/662—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation the conductor further comprising additional layers, e.g. multiple silicon layers having different crystal structures
- H10D64/663—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation the conductor further comprising additional layers, e.g. multiple silicon layers having different crystal structures the additional layers comprising a silicide layer contacting the layer of silicon, e.g. polycide gates
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6046674A JPH07263674A (ja) | 1994-03-17 | 1994-03-17 | 電界効果型半導体装置とその製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW270233B true TW270233B (enrdf_load_stackoverflow) | 1996-02-11 |
Family
ID=12753928
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW084104516A TW270233B (enrdf_load_stackoverflow) | 1994-03-17 | 1995-05-06 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JPH07263674A (enrdf_load_stackoverflow) |
| KR (1) | KR0185461B1 (enrdf_load_stackoverflow) |
| TW (1) | TW270233B (enrdf_load_stackoverflow) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5958508A (en) * | 1997-03-31 | 1999-09-28 | Motorlola, Inc. | Process for forming a semiconductor device |
| JPH10308454A (ja) * | 1997-05-02 | 1998-11-17 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
| US6284636B1 (en) * | 2000-01-21 | 2001-09-04 | Advanced Micro Devices, Inc. | Tungsten gate method and apparatus |
| US6277744B1 (en) | 2000-01-21 | 2001-08-21 | Advanced Micro Devices, Inc. | Two-level silane nucleation for blanket tungsten deposition |
| US6274472B1 (en) | 2000-01-21 | 2001-08-14 | Advanced Micro Devices, Inc. | Tungsten interconnect method |
| KR100745604B1 (ko) * | 2006-07-03 | 2007-08-02 | 삼성전자주식회사 | 반도체 소자 및 그 형성 방법 |
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1994
- 1994-03-17 JP JP6046674A patent/JPH07263674A/ja not_active Withdrawn
-
1995
- 1995-03-11 KR KR1019950005041A patent/KR0185461B1/ko not_active Expired - Fee Related
- 1995-05-06 TW TW084104516A patent/TW270233B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| KR950028175A (ko) | 1995-10-18 |
| JPH07263674A (ja) | 1995-10-13 |
| KR0185461B1 (ko) | 1999-03-20 |