JPH07252325A - Semiconductor device - Google Patents

Abstract

PURPOSE:To obtain a thin semiconductor device free from an unfilled part and a void extending from one side to the other of the package and suffering little warpage by sealing a semiconductor element with a specified thermosetting resin composition having a specified content of an inorganic filler. CONSTITUTION:A semiconductor device made by sealing a semiconductor element with a thermosetting resin composition consisting of a maleimide compound (a) having at least two maleimide groups in the molecule, at least one compound (b) selected from an alkenylphenol compound and an alkenylphenol ether compound in an amount sufficient to provide an equivalent ratio of the maleimide group of component (a) to the alkenyl group of component (b) of 1:(0.05 to 0.7), and an inorganic filler (c), wherein the inorganic filler having a particle diameter of 0.9Xmum or larger accounts for at most 2wt.% of the total inorganic filler (c) when the thickness of the thinnest part of the sealing resin layer is set to Xmum (X=30 to 100).

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thin semiconductor device.

[0002]

2. Description of the Related Art Conventional semiconductor devices are generally packaged.
The thickness of the die is 2 mm or more, and the thickness of each sealing resin layer on the semiconductor element and below the die pad is also sufficient, and for example, filling can be performed when using a molding die such as transfer molding. It was easy to set a different sealing resin composition. However, with the trend toward miniaturization and thinning of semiconductor packages, the thickness of the package itself is 1 m.
A thin package having a thickness of m or less has also been manufactured, and the thickness of the sealing resin layer below the semiconductor element and the die pad in such a package may be set to 100 μm or less. Therefore, when the above-mentioned thin package is formed by using the conventional resin composition, unfilled portions and through voids (voids) are generated.

With respect to such a problem, the present inventors have disclosed in Japanese Patent Application No. 5-183810 that the resin layer has a thickness of 30 to 1
An epoxy resin composition that can provide a thin semiconductor device without forming a non-filled portion or a through void in a package of 00 μm is made possible by controlling the maximum diameter of the filler.

[0004]

However, in such an ultra-thin package, warpage of the package becomes a problem in addition to the filling property into the thin resin layer. That is, the package is generally made of a material having a linear expansion coefficient different from that of the semiconductor element, the lead frame, the sealing resin and the like. In addition, TAB (Tape Automated B
Tape Carrier using the oncoming connection)
Similarly, in the case of the mold package, the semiconductor element, the polyimide film, the copper lead and the like are all made of materials having different linear expansion coefficients. Therefore, warpage occurs when cooled from the curing temperature to room temperature. Particularly, in the case of an ultra-thin package, a structure in which only the upper surface of the semiconductor element is sealed is proposed in order to make the resin layer as thin as possible while ensuring the thickness. In such a case, the problem of warpage becomes more prominent. There are various degrees of allowable warp, but it is needless to say that the warp is preferably smaller in order to improve accuracy when mounting on a printed circuit board.

The present invention has been made in view of such circumstances, and there is no unfilled portion or through void in the package,
Moreover, it is an object of the present invention to provide a thin semiconductor device having a small warpage as described above.

[0006]

In order to achieve the above object, in a semiconductor device of the present invention, a semiconductor element is sealed with a thermosetting resin composition comprising the following components (a) to (c). When the thickness of the thinnest part of the sealing resin layer is set to x μm (x = 30 to 100), the inorganic filler of the component (c) satisfies the following (A). The configuration is characterized in that (A) The content of the inorganic filler having a particle diameter of 0.9 × μm or more is set to 2% by weight or less of the whole inorganic filler. (A) A maleimide compound having two or more maleimide groups in one molecule. (B) At least one of an alkenylphenol compound and an alkenylphenol ether compound in which the alkenyl group is set to 0.05 to 0.7 equivalents relative to 1 equivalent of the maleimide group of the component (a). (C) Inorganic filler.

Next, the present invention will be described in detail.

The maleimide compound which is the component (a) has two or more maleimide groups in one molecule, and for example, the following [Chemical formula 1], [Chemical formula 2] and [Chemical formula 3]
Those obtained by using the maleimide compound represented by These maleimide compounds may be used alone or in combination.

[0009]

[Chemical 1]

[Chemical 2]

[Chemical 3]

Further, in the maleimide compound, 2,2-bis [4- (4-maleimidophenoxy) phenyl] propane represented by the following [Chemical formula 4] is added to 50% by weight of the entire maleimide compound (a) component ( Hereinafter, it is preferably abbreviated as “%”) or more. That is, when a semiconductor element is sealed with a resin composition obtained when the compounding amount of 2,2-bis [4- (4-maleimidophenoxy) phenyl] propane is set to 50% or more, solder crack resistance of a semiconductor device This is because the property becomes good.

[Chemical 4]

(B) used together with the above component (a)
At least one of the alkenylphenol compound and the alkenylphenol ether compound as a component has a curing action for the maleimide compound.

The above alkenylphenol compound has a chemical structural unit represented by the following [Chemical formula 5] and [Chemical formula 6].
One or more is contained. Then, specifically, a compound represented by the following [Chemical Formula 7] can be mentioned. In the present invention, the alkenylphenol is not only an oligomer having a repeating unit represented by the following [Chemical formula 7],
The purpose is to include the monomer represented by [Chemical Formula 8]. These alkenylphenol compounds have a softening point of 120 to 2
It is preferably 50 ° C. and has a molecular weight of 200 to 4000.

[0013]

[Chemical 5]

[Chemical 6]

[Chemical 7]

[Chemical 8]

The alkenylphenol ether compound has one or more chemical structural units represented by the following [Chemical Formula 9] and [Chemical Formula 10]. Then, specifically, a compound having a repeating unit represented by the following [Chemical Formula 11] can be mentioned. In the present invention, the alkenylphenol ether is intended to include not only an oligomer having a repeating unit represented by the following [Chemical formula 11] but also a monomer represented by the [Chemical formula 12]. . These alkenylphenol ether compounds have a softening point of 120 to 25.
It is preferably 0 ° C. and has a molecular weight of 200 to 4000.

[Chemical 9]

[Chemical 10]

[Chemical 11]

[Chemical 12]

The above alkenylphenol compound and alkenylphenol ether compound are not limited to the above polymers and monomers. For example, phenol, cresol, ethylphenol, isopropylphenol, butylphenol, octylphenol, xylenol, nonylphenol, vinylphenol, isopropylphenol, phenylphenol, Monovalent phenols such as benzylphenol, chlorophenol, bromophenol and ethoxyphenol, and bisphenol A, bisphenol F, hydroquinone, caraco
And a phenol novolak compound obtained by subjecting a divalent phenol such as resole and resorcinol as a raw material to a condensation reaction of this with an aldehyde compound such as formalin, paraformaldehyde and glyoxal by a known method,
It is also possible to use those obtained by reacting the above monovalent and divalent phenols with allyl halides such as allyl chloride, allyl bromide and allyl iodide in the presence of alkali.

These alkenylphenol compounds and alkenylphenol ether compounds may be used alone or in combination.

The mixing ratio of the specific maleimide compound (a) component and at least one of the alkenylphenol compound and the alkenylphenol ether compound (b) component is equivalent to the specific maleimide compound ( With respect to 1 equivalent of the maleimide group in the component a), the above (b)
It is necessary to set the alkenyl group in the component in the range of 0.05 to 0.7 equivalent, and preferably 0.2 to 0.65. That is, outside the above range of 0.05 to 0.7 equivalents, if the semiconductor element is encapsulated with the obtained resin composition, the reliability of the semiconductor device is reduced.

In addition, as a resin composition for sealing a semiconductor element, at least one of the three compounds (a) or (b) above is at least one of a SiH group and an amino group at the terminal or side chain. It is preferable to use a product reacted with a silicone compound having Examples of such silicone compounds include the following [Chemical Formula 13] and [Chemical Formula 14]. In [Chemical Formula 13], the molecular weight is preferably 230 to 70,000, and more preferably 400 to 50,000. In addition, the active hydrogen equivalent is preferably 100 to 60,000. More preferably, it is 200 to 40,000. Further, preferable m and n are integers of 0 to 300 and 1 to 20, respectively, and further preferable m and n are 2 to 200 and 2 to 10, respectively.
Is an integer. Further, preferable R is a methyl group, a phenyl group, or a mixture thereof. [Chemical 14]
In the above, the molecular weight is preferably 150 to 60,000, and more preferably 600 to 40,000.
In addition, the active hydrogen equivalent is preferably 70 to 30,000. More preferably, it is 100 to 20,000. Further, preferable n is an integer of 0 to 300, and further preferable n is an integer of 2 to 200. Further, preferable R is a methyl group, a phenyl group, or a mixture thereof. The modified maleimide compound, modified alkenylphenol compound, modified alkenylphenol ether compound, etc., with such a silicone compound are used alone or in combination to further improve the moisture resistance, solder crack resistance and mechanical strength. To do. Further, the amount of this silicone compound used is the same as the above-mentioned component (a) and (b).
It is preferable to set 40% or less of the total amount of the components,
It is particularly preferable to set it in the range of 3 to 20%. That is, when the amount of the silicone compound used exceeds 40%, the heat resistance and mechanical strength of the obtained resin composition are remarkably lowered.

[Chemical 13]

[Chemical 14]

In the above-mentioned special inorganic filler (c) component,
The material is not particularly limited, and commonly used silica powder, alumina powder, quartz glass powder, aluminum oxide, magnesium oxide, aluminum hydroxide, aluminum carbonate, diatomaceous earth, calcium silicate, calcined clay, car Bonblack, kaolin, powdered mica, graphite, asbestos, antimony trioxide,
Examples thereof include glass fiber, rock wool, carbon fiber and the like.

When an inorganic filler is used, its content is preferably set to 50% or more of the whole thermosetting resin composition, more preferably 70% or more, particularly preferably 75 to 90%. . Moreover, it is preferable to use spherical particles as the shape of the inorganic filler. The average particle size of the entire inorganic filler is preferably set to 5 to 25 μm. Furthermore, it is necessary to satisfy the following (A). Particularly preferably, the content of the inorganic filler having a particle diameter of 0.9 × μm or more is set in the range of 1 to 2% of the whole inorganic filler. In addition, the upper limit of the particle diameter is usually 0.99 × μm. That is, particle size 0.9 x μ
This is because the inorganic filler having a large particle diameter of m or more comes to be distributed in the thinnest layer portion, and an unfilled portion or a through void is formed at the time of resin sealing. Note that x in the following (A) is the thickness of the thinnest sealing resin layer portion of the semiconductor device, and x = 30.
˜100 μm.

(A) The content of the inorganic filler having a particle diameter of 0.9 × μm or more is set to 2% or less of the whole inorganic filler.

The particle size of the inorganic filler is 0.9 × μ.
The measurement of the content ratio of the particles having a particle size of m or more is 0.9 x μm
The above-mentioned inorganic filler is sieved using a JIS standard sieving machine corresponding to the above, and the weight of the inorganic filler remaining on the sieve is measured and evaluated.

The particle size distribution of the whole inorganic filler (c) component is preferably set as shown below. For example, in the particle size distribution curve (the vertical axis is the cumulative distribution, the horizontal axis is the particle size) obtained by an arbitrary particle size distribution measuring method, the distribution of 0.9 × μm is 98-
It is desirable that 99%, 0.5xμm is 90 to 98%, 0.2xμm is 40 to 80%, and 0.05xμm is 10 to 40%.

In addition to the components (a) to (c) described above, the resin composition used in the present invention may optionally contain a curing catalyst, a coloring agent, a release agent, a flame retardant, a coupling agent and A rubber compound or the like can be appropriately mixed.

As the curing catalyst, which is optionally used together with the above components (a) to (c), an organic phosphine compound, a basic catalyst, an imidazole-based catalyst, a radical initiator and the like are used. Among them, organic phosphine compounds are particularly preferable in the present invention, and examples of the above organic phosphine compounds include tributylphosphine, trioctylphosphine, tribenzylphosphine, triphenylphosphine, triphenylphosphonium triphenylborate and tetraphenyl. Examples thereof include phosphonium tetraphenylborate, triphenylphosphine oxide and tetraphenylphosphonium bromide. These may be used alone or in combination. Further, in the present invention, it is preferable to set the organic phosphine compound so as to contain 50% or more of the entire curing catalyst. Then, other basic catalysts, imidazole-based catalysts, radical initiators and the like are used supplementarily. As described above, the semiconductor device sealed with the resin composition containing the curing catalyst in which the organic phosphine compound is set to a predetermined content ratio has excellent mechanical strength, and also has a low water absorption rate and excellent reliability. Become. The compounding amount of the curing catalyst is 0.1 with respect to 100 parts of the specific maleimide compound (a) component.
It is preferable to set it in the range of 10 parts from the viewpoint of shortening the curing time of the resin composition. That is, if the compounding amount of the curing catalyst is less than 0.1 part, the catalytic action is small, and further the effect of improving the heat resistance reliability, the moisture resistance reliability and the mechanical strength of the obtained semiconductor device cannot be sufficiently obtained. This is because it is difficult to obtain the effect of further improving the reliability even if the content exceeds the above range.

As the above colorants, titanium dioxide, yellow lead carbon black, iron black, molybdenum red, ultramarine blue, navy blue,
Examples thereof include cadmium yellow and cadmium red.

Examples of the releasing agent include higher aliphatic paraffins, higher fatty acids, higher aliphatic esters, natural waxes and synthetic waxes, and flame retardants include
Examples thereof include antimony and halogen compounds. Further, examples of the coupling agent include a silane coupling agent and the like.

Examples of the above-mentioned rubber compound include polybutadiene rubber and finely powdered rubber of a cured product of organopolysiloxane.

The above colorant, release agent and flame retardant may be used alone or in combination.

The resin composition used in the present invention can be manufactured, for example, as follows. That is,
The above-mentioned essential components (a) to (c), optionally a silicone compound and, if necessary, the above additives are appropriately blended, and the mixture is melted by heating and kneading with a kneader such as mixin roll and kneader. To obtain a semi-cured (B stage) resin composition. Further, the components (a) and (b) are melt-mixed in advance to form a prepolymer. Then, this prepolymerized product and the remaining essential component (c),
In some cases, a silicone compound and, if necessary, the above additives may be appropriately mixed, and the mixture may be melted by heating and kneading with a kneader such as mixin roll and kneader to obtain a semi-cured resin composition. Further, in advance, the above-mentioned component (a) or (b)
A modified product is prepared by reacting at least one of the three compounds as components with a silicone compound. Then, the modified product, the remaining component (c) and, if necessary, the above additives are blended appropriately, and the mixture is heated and melted and kneaded by a kneader such as mixin roll and kneader to form a semi-cured resin composition. It is a thing. Then, the desired resin composition can be obtained by returning these resin compositions to room temperature, pulverizing them by a known means, and tableting as necessary.

The resin composition used in the present invention is usually in the form of powder or a tablet obtained by compressing it. The encapsulation of the semiconductor element using such a resin composition is not particularly limited, and can be performed by an ordinary method, for example, a known molding method such as transfer molding.

At this time, as the above-mentioned thermosetting resin composition, the mold temperature (usually 1
The melt viscosity at 50 to 180 ° C.) is preferably set in the range of 20 to 2000 poise, and specifically, when the mold temperature is 175 ° C., the melt viscosity is set in the range of 20 to 1000 poise. Is preferred. Usually, when a large amount of the inorganic filler (c) component is contained, the viscosity of the thermosetting resin composition increases, but in the thin package which is the object of resin sealing of the present invention, the above-mentioned specific inorganic filler is used. In order to completely fill the thinnest portion with the resin composition containing the agent, there is no particular problem as long as the minimum melt viscosity at the molding temperature is 2000 poise or less. The minimum melt viscosity is measured by a Koka type flow tester, and the nozzle diameter may be 1 mm and the nozzle length may be 1 cm.

[0033]

As described above, in the semiconductor device of the present invention, the semiconductor element has the thickness of the thinnest portion of the sealing resin layer is xμ.
When set to m, a thermosetting resin composition containing an extremely small amount of an inorganic filler having a particle size substantially equal to or larger than the thickness, and most containing an inorganic filler having a small particle size as an essential component. It is resin-sealed. Therefore, the inorganic filler having a small particle size is smaller than the thickness of the thinnest layer portion and is filled in the thinnest portion without clogging. Therefore,
The toughness of the thinnest part is improved and cracks are less likely to occur. Moreover,
No unfilled parts or through voids are formed in the resulting package. Further, since the semiconductor device of the present invention is sealed with a specific thermosetting resin composition, it is packaged.
The warp of J is small. As described above, by designing the filler and using the specific thermosetting resin composition, it is possible to fill the thin layer required for the sealing resin for the ultra-thin package and the package. It has become possible to satisfy both the performance of controlling the warp of the. The semiconductor device of the present invention is most suitable for a thin package having a package thickness of 1 mm or less, and is compatible with recent miniaturization and thinning.

First, each component shown below was prepared prior to the examples.

[Maleimide Compound A] [Chemical Formula 15]
And has a maleimide equivalent of 179.

[Chemical 15]

[Maleimide Compound B] [Chemical Formula 16]
And has a maleimide equivalent of 285.

[Chemical 16]

[Alkenylphenol Compound] It has a repeating unit represented by the following [Chemical Formula 17] and has an allyl equivalent of 115.

[Chemical 17]

[Alkenylphenol ether compound]
It has a repeating unit represented by the following [Chemical Formula 18] and has an allyl equivalent of 115.

[Chemical 18]

[Silicon Compound E] [Chemical Formula 19]
The amine equivalent is 2000.

[Chemical 19]

[Silicon Compound F] [Chemical Formula 20]
And the SiH equivalent is 700.

[Chemical 20]

[Organic phosphine compound]
1] Triphenylphosphine-triphenylborate.

[Chemical 21]

[Imidazole-based catalyst] The following [Chemical Formula 22]
2-Methylimidazole represented by:

[Chemical formula 22]

[Radical Initiator] α, α'-bis (t-butylperoxy-m-isopropylbenzene) represented by the following [Chemical Formula 23].

[Chemical formula 23]

Next, among the above components, a maleimide compound A, an alkenylphenol compound, an alkenylphenol ether compound, a silicone compound E, and a silicone compound.
The modified silicone compounds a to d were prepared by using the compound F and the platinum catalyst and mixing them in the proportions shown in [Table 1] below and mixing them by heating.

[Table 1]

Further, silica particles shown in [Table 2] to [Table 4] were prepared.

[Table 2]

[Table 3]

[Table 4]

Maleimide compound A, maleimide compound B, alkenylphenol compound, alkenylphenol ether compound, curing catalyst and, if necessary, modified silicone compound prepared above, carnauba wax, aminosilane coupling agent. , Antimony trioxide,
Carbon black was blended at the blending ratios shown in [Table 5] and [Table 6] below, and then these organic components and [Table 2] were blended.
To silica particles shown in [Table 4] to [Table 7] to [Table 14]
It was compounded in the ratio shown in. Then, this mixture was kneaded for 2 minutes by a mixing machine (temperature: 150 ° C.) to prepare a sheet-like material. Further, the sheet-like material was cooled and then pulverized to obtain a desired powdery resin composition.

[Table 5]

[Table 6]

[Table 7]

[Table 8]

[Table 9]

[Table 10]

[Table 11]

[Table 12]

[Table 13]

[Table 14]

[0047]

【Example】

[Examples 1 to 27, Comparative Examples 1 to 22] Using the resin compositions thus obtained, semiconductor elements were resin-sealed by ordinary transfer molding (molding temperature 175 ° C).
Then, as shown in FIG. 1, in the sealing resin layer 4, the thickness of the sealing resin layer below the die pad 2 is set to x (x =
A plurality of semiconductor devices set to 35 μm, 53 μm, 71 μm, 100 μm) were manufactured as shown in [Table 15]. In FIG. 1, 1 is a semiconductor element and 3 is a lead frame. The size of the semiconductor device is 8 × 18 mm, and the size of the die pad 2 is 5.8 × 14.5 mm.

[Table 15]

The filling degree of the thinnest layer (thickness x μm) of the encapsulating resin portion in the manufactured semiconductor device was visually judged and evaluated. Furthermore, this portion was polished and observed with a scanning electron microscope, and ○ was completely filled with the presence of silica particles in the particle size distribution and amount as designed, and × was the unfilled portion was formed. [Table 7] to [Table 1]
2].

From the results of [Table 7] to [Table 12] above, in all of the example products, the resin composition was completely filled in the thinnest layer portion (thickness x μm portion) without forming an unfilled portion. I understand that Moreover, the toughness of the thinnest layer portion of the example product was improved.

Next, the warpage of the package was measured using a surface roughness meter, and the difference between the high and low parts was taken as the value of the warpage. For the measurement, a surface roughness meter was run in the short side direction of the package, the front and back of the package were measured, and the average value was used as the warp.
The package size is 7.4 × 5.8 × 0.4 mm, and the semiconductor element size is 6.0 × 4.4 × 0.2 mm. The structure is TAB shown in FIG. For the results of measuring the warpage of the package, see [Table 13] and [Table 1] above.
4].

From the results shown in [Table 13] and [Table 14], it can be seen that the product of Example has less warpage of the package than the product of Comparative Example.

[0052]

[Brief description of drawings]

FIG. 1 is a sectional view showing an evaluation semiconductor device used in Examples and Comparative Examples.

FIG. 2 is an evaluation TAB used in Examples and Comparative Examples.
FIG.

DESCRIPTION OF SYMBOLS 1 semiconductor element 2 die pad 3 lead frame 4 encapsulating resin layer 1a semiconductor element 3a copper lead frame 4a encapsulating resin layer 5 polyimide film

─────────────────────────────────────────────────── ─── Continuation of front page (51) Int.Cl. ⁶ Identification code Office reference number FI technical display location // C08G 65/00 NQC

Claims (10)

[Claims] 1. A semiconductor device obtained by encapsulating a semiconductor element with a thermosetting resin composition comprising the following components (a) to (c), wherein the thickness of the thinnest portion of the encapsulating resin layer is: xμ
A semiconductor device, wherein the inorganic filler of the component (c) satisfies the following (A) when set to m (x = 30 to 100). (A) The content of the inorganic filler having a particle diameter of 0.9 × μm or more is set to 2% by weight or less of the whole inorganic filler. (A) A maleimide compound having two or more maleimide groups in one molecule. (B) At least one of an alkenylphenol compound and an alkenylphenol ether compound in which the alkenyl group is set to 0.05 to 0.7 equivalents relative to 1 equivalent of the maleimide group of the component (a). (C) Inorganic filler. 2. The maleimide compound as the component (a) contains 2,
2-bis [4- (4-maleimidophenoxy) phenyl] propane is contained in an amount of 50% by weight or more.
The semiconductor device described. 3. The semiconductor device according to claim 1, wherein the content of the inorganic filler having a particle diameter of 0.9 × μm or more is set in the range of 1 to 2% by weight based on the whole inorganic filler. 4. The average particle size of the inorganic filler is 5 to 25 μm.
The semiconductor device according to claim 1, wherein the semiconductor device is set to m. 5. A maleimide compound as the component (a) or an alkenylphenol compound or an alkenylphenol ether compound as the component (b), wherein at least one of the three compounds has a SiH group at the terminal or side chain and The semiconductor device according to any one of claims 1 to 4, which is reacted with a silicone compound having at least one amino group. 6. A thermosetting resin composition for semiconductor encapsulation containing the following components (a) to (c), wherein the inorganic filler as the component (c) satisfies the following (A): A thermosetting resin composition for semiconductor encapsulation, which is a product. (A) The content of the inorganic filler having a particle diameter of 0.9 × μm or more is set to 2% by weight or less of the entire inorganic filler (where x is the sealing resin layer after resin sealing of the semiconductor element). The thickness of the thinnest portion, x = 30 to 100). (A) A maleimide compound having two or more maleimide groups in one molecule. (B) At least one of an alkenylphenol compound and an alkenylphenol ether compound in which the alkenyl group is set to 0.05 to 0.7 equivalents relative to 1 equivalent of the maleimide group of the component (a). (C) Inorganic filler. 7. The maleimide compound as the component (a) contains 2,
7. Bis [4- (4-maleimidophenoxy) phenyl] propane is contained in an amount of 50% by weight or more.
The thermosetting resin composition for semiconductor encapsulation as described above. 8. The semiconductor encapsulation according to claim 6 or 7, wherein the content of the inorganic filler having a particle diameter of 0.9 × μm or more is set in the range of 1 to 2% by weight based on the whole inorganic filler. Thermosetting resin composition. 9. The average particle size of the inorganic filler is 5 to 25 μm.
The thermosetting resin composition for semiconductor encapsulation according to claim 6, wherein the thermosetting resin composition is set to m. 10. At least one of the three compounds of the maleimide compound as the component (a) or the alkenylphenol compound or the alkenylphenol ether compound as the component (b) has a SiH group at the terminal or side chain and The thermosetting resin composition for semiconductor encapsulation according to any one of claims 6 to 9, which is reacted with a silicone compound having at least one amino group.