JPH07249375A - Manufacture of shadow mask - Google Patents

Abstract

PURPOSE:To shorten the time required to peel the second resist film of a shadow mask by using ultrasonic waves during the process of peeling the second resist film, in methods for peeling the resist films of the shadow mask. CONSTITUTION:The second resist film of a shadow mask is peeled using a method which comprises installing an ultrasonic device 10 in a second resist peeling tank 11 during peeling processes and installing an immersion device 10 parallel to a base 5, or a method wherein the immersion device 10 is installed at an angle of 45+ or -2 degrees to a base 15. A peeling effect can be obtained by changing the thickness of the second resist film 20 depending on the methods. The method in which the device 10 is installed parallel to the base 15 is effective when the film 20 is thick. The method in which the device 10 is installed at an angle of 45+ or -2 degrees to the base 15 is effective when the film 20 is thin. Further, the two methods can be employed simultaneously for a greater peeling effect.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a shadow mask made of a metal plate used for a color picture tube of a color television.

[0002]

2. Description of the Related Art In a conventional method for manufacturing a shadow mask for a color picture tube, the shadow mask has been manufactured by the steps shown in FIG. First, after forming a desired regular pore pattern with the first resist film (18, 18) on the front and back surfaces of the metal plate (15), the etching solution (17) is sprayed on both surfaces (a dipping method is also possible. Etching is performed, and the second resist material (19) is sprayed on one side of the metal plate (15) in the middle of the etching to form the second resist film (20).
To form.

Next, etching is performed from the opposite side of the second resist film (20) to penetrate the metal plate (15), and then the second resist film (20) and the first resist film (18). , 18) are removed to obtain a shadow mask in which a large number of fine holes (H) are regularly formed in the metal plate (15).

The peeling step of the second resist film (20) in this manufacturing process is performed by the chemical solution (1) of the peeling device shown in FIG.
2) It passed through the inside to dissolve and peel off. This chemical solution (12) is, for example, an alkaline chemical solution (NaOH-20
The resist film is stripped using 80 parts by weight of water. At this time, the peeling condition was controlled by adjusting the concentration of the chemical liquid and the liquid temperature of the chemical liquid.

[0005]

However, as described above, in the step of removing the second resist film (20) of the conventional shadow mask, the control for the chemical solution (12) is limited. In managing this chemical,
There is a problem that the influence on the shadow mask itself is increased due to an increase in the concentration of the chemical liquid and the temperature of the chemical liquid, and the range for suppressing the occurrence of defects (for example, substrate discoloration and unevenness) is narrowed and limited.

[0006]

Therefore, according to claim 1 of the present invention, in the stripping step of the second resist film (20), the ultrasonic device (10) is placed in the stripping tank performed by the chemical solution (12). Is provided, it is possible to suppress the occurrence of defects due to chemical concentration and temperature control, and it is possible to deal with the defects by expanding the adjustment range at the time of occurrence of the defects.

According to the second aspect, in the step of removing the second resist film, the temperature of the chemical solution is controlled to 6 by using ultrasonic waves.
It is a method for producing a shadow mask, which can be held at a temperature of 0 to 70 ° C. and can be reduced in concentration of a chemical solution to shorten the stripping time.

According to the third aspect, in the peeling step of the second resist film, the ultrasonic frequency is 25 KHz to 45 KHz.
The method for producing a shadow mask is characterized by using the range of.

[0009]

The method of manufacturing the shadow mask of the present invention has the following problems due to the concentration of the chemical liquid and the temperature of the chemical liquid, and the discoloration of the shadow mask itself:
By expanding the adjustment range when defects such as unevenness occur,
Dealing with and suppressing defects.

[0010]

Embodiment An embodiment will be described with reference to the drawings. FIG. 1 is a schematic view showing a state in which an ultrasonic device is installed parallel to a substrate in a second resist stripping tank in a stripping step in an example of the present invention. Further, FIG. 2 is a schematic view showing a state (installed at the bottom of the tank) in which the ultrasonic device is installed at an angle of 45 degrees with respect to the substrate in the second resist removing tank of the removing step in another embodiment. .

According to the present invention, the resist film is peeled off by an ultrasonic device as compared with the conventional peeling of the resist film containing only the chemical solution (see FIG. 3). Specifically, the ultrasonic device (10) is installed in the second resist stripping tank (11) in the stripping step, and as shown in FIG. 1, the throw-in type ultrasonic device (10) is mounted on the substrate (15). There is a method of installing in parallel with respect to, and a method of installing at an angle of 45 ° ± 2 ° with respect to the substrate (15) as shown in FIG.

Regarding these two methods, a peeling effect can be obtained by switching the film thickness of the second resist film (20), and the ultrasonic device (10) is installed in parallel with the substrate (15). The method can obtain an effect when the film thickness of the second resist film (20) is large. In addition, the method of setting the substrate (15) at 45 ° ± 2 ° is effective when the second resist film (20) is thin. Preferably, the best effect can be obtained by installing at 45 degrees with respect to the substrate. Furthermore, it is possible to utilize the two methods at the same time, and a further peeling effect can be obtained.

By installing this ultrasonic device (10), it is possible to lower the temperature of the chemical liquid by 10 to 20 ° C. from the conventional temperature of about 80 ° C. and maintain it at 60 to 70 ° C. It is possible to shorten the conventional peeling time of about 60 seconds by only 10 to 20 seconds. As a result, it is possible to suppress an increase in the temperature of the chemical liquid of 5 to 6 ° C. which occurs when the second resist film (20) is peeled off, and a decrease in the temperature of the chemical liquid and a reduction in the peeling time may cause discoloration, unevenness, Defects can be prevented.

Further, even when the peeling time is the same as the conventional one, the chemical concentration can be lowered by 10 to 13% from the conventional chemical concentration, and defects can be prevented.

Next, the installation condition of the ultrasonic device (10) is 3 to 5c with respect to the surface of the second resist film (20) in the case of the method of installing in parallel to the substrate (15) of FIG.
Installed in parallel with m position, ultrasonic frequency is 25 ~ 45K
Set to the range of Hz. Also, for the substrate (15), 4
In the case of the method of setting at an angle of 5 ° ± 2 °, the folding roll (14) shown in FIG.
Set in the range of up to 45 KHz.

The ultrasonic frequency being set within the above range means that after the second resist film (20) is peeled off, the portion where the resist film is remarkably decomposed and dissolved in the peeling tank (11) is promoted. The second resist film (20) is set in the range of 25 to 45 KHz in consideration of the portion that effectively causes the peeling.

[0017]

As described above, according to the present invention, the second resist film is removed early by installing the ultrasonic device in the second resist film peeling tank. By installing this ultrasonic device, the concentration of the chemical solution and the temperature of the chemical solution can be lowered, and further, the peeling time of the second resist film can be shortened, and after the peeling, the decomposition and dissolution are promoted by ultrasonic waves in the tank. The problem can be dealt with and suppressed by widening the adjustment range at the time of a problem due to temperature and the occurrence of a defect.

[Brief description of drawings]

FIG. 1 is a schematic view showing a state where an ultrasonic device is installed in parallel with a substrate in a second resist stripping tank in a stripping step in an example of the present invention.

FIG. 2 is a schematic view showing a state where an ultrasonic device is installed in a second resist stripping tank in a stripping step in another embodiment of the present invention at an angle of 45 degrees with respect to a substrate.

FIG. 3 is an explanatory diagram showing peeling by an ultrasonic device in a resist film peeling step.

FIG. 4 is a schematic view showing a conventional resist film peeling process using a chemical-only peeling tank.

FIG. 5 is an explanatory view showing a manufacturing process of a conventional shadow mask.

[Explanation of symbols]

 10 ... Ultrasonic device 11 ... Peeling tank 12 ... Chemical solution 14 ... Folding roll 15 ... Substrate (shadow mask) 17 ... Etching solution 18 ... First resist film 19 ... Resist solution 20 ... Second resist film H ... Pore

Claims (3)

[Claims] 1. A method of manufacturing a shadow mask, comprising: first-step double-sided etching stopped at an unopened hole; second-step open hole etching performed in a state where a small resist side is filled with a second resist; As a film peeling method, in the peeling step of the second resist film, peeling is performed using ultrasonic waves, and a method for manufacturing a shadow mask. 2. The method for producing a shadow mask according to claim 1, wherein the chemical temperature is maintained at 60 to 70 ° C. by using ultrasonic waves in the step of removing the second resist film. 3. The method of manufacturing a shadow mask according to claim 1, wherein an ultrasonic frequency in the range of 25 to 45 KHz is used in the step of removing the second resist film.