JPH0719924B2 - Magnetic detection device - Google Patents
Magnetic detection deviceInfo
- Publication number
- JPH0719924B2 JPH0719924B2 JP63178790A JP17879088A JPH0719924B2 JP H0719924 B2 JPH0719924 B2 JP H0719924B2 JP 63178790 A JP63178790 A JP 63178790A JP 17879088 A JP17879088 A JP 17879088A JP H0719924 B2 JPH0719924 B2 JP H0719924B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- detection device
- magnetic detection
- concentration
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000005291 magnetic effect Effects 0.000 title claims description 21
- 238000001514 detection method Methods 0.000 title claims description 19
- 239000010408 film Substances 0.000 claims description 61
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 22
- 239000012535 impurity Substances 0.000 claims description 19
- 235000012239 silicon dioxide Nutrition 0.000 claims description 11
- 239000000377 silicon dioxide Substances 0.000 claims description 11
- 229910052698 phosphorus Inorganic materials 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 9
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 8
- 239000011574 phosphorus Substances 0.000 claims description 8
- 229910052785 arsenic Inorganic materials 0.000 claims description 7
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 6
- 239000010409 thin film Substances 0.000 claims description 5
- 230000005294 ferromagnetic effect Effects 0.000 claims description 3
- 238000009792 diffusion process Methods 0.000 description 15
- 238000004519 manufacturing process Methods 0.000 description 8
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- 230000007423 decrease Effects 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 3
- 230000005389 magnetism Effects 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000003302 ferromagnetic material Substances 0.000 description 2
- 238000005247 gettering Methods 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 239000005380 borophosphosilicate glass Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000005381 magnetic domain Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Hall/Mr Elements (AREA)
- Measuring Magnetic Variables (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は磁気検出手段として基板上に薄膜の強磁性磁気
抵抗素子（以下、「MR素子」という。）を形成した磁気
検出装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial field of use] The present invention relates to a magnetic detection device having a thin film ferromagnetic magnetoresistive element (hereinafter referred to as "MR element") formed on a substrate as magnetic detection means.
磁気を検出する手段として、強磁性体を主成分としたMR
素子の薄膜を基板上に形成した磁気検出装置が提案され
ている。As a means to detect magnetism, MR mainly composed of ferromagnetic material
A magnetic detection device has been proposed in which a thin film of an element is formed on a substrate.
そのような磁気検出装置はMR素子が磁気（磁界）を受け
る事によりその抵抗値が変化する事を利用して、その磁
気の変化を例えば電圧変化として出力するように構成さ
れている。Such a magnetic detection device is configured to output a change in the magnetism as, for example, a voltage change by utilizing the fact that the resistance value of the MR element changes when the MR element receives magnetism (magnetic field).
そして、上記のような磁気検出装置はその出力信号が非
常に小さい為に、第２図に示すように増幅回路や波形整
形回路等のIC100によりMR素子101からの信号を増幅処理
した状態で出力している。尚、第２図中102はリード、1
03はモールドケースである。そして最近ではMR素子とそ
れらのICとを集積化する要求が高まっている。Since the output signal of the magnetic detection device as described above is extremely small, the signal from the MR element 101 is output after being amplified by the IC 100 such as an amplification circuit or a waveform shaping circuit as shown in FIG. is doing. In FIG. 2, 102 is a lead and 1
03 is a molded case. Recently, the demand for integrating MR elements and their ICs is increasing.
第３図はそのようなMR素子とICとを一体的に形成した磁
気検出装置の従来考えられる構造を表わす断面図であ
る。この磁気検出装置の製造工程を第５図を用いて説明
する。まずＰ型のSiウェハー１を用いて（ステップ20
0）、その表面を熱酸化して（ステップ201）所定領域を
開口する。その開口した領域よりSb（アンチモン）また
はAs（ヒ素）を拡散することによりN+型埋込層２を形成
する（ステップ202）。ステップ201により形成された熱
酸化膜を除去した後エピタキシャル成長を行い低不純物
濃度のN-型エピタキシャル層３を形成する（ステップ20
3）。エピタキシャル層３の表面を熱酸化した後（ステ
ップ204）、アイソレーション領域となる部分を開口
し、Ｂ（ボロン）を拡散したアイソレーション領域４を
形成する（ステップ205）。そして、選択的にSiO2から
なる絶縁膜を形成した後Ｂを拡散してベース領域となる
P+型拡散層６を形成し（ステップ207）、同様にＰを拡
散してエミッタ領域、およびコレクタ（エピタキシャル
層３）とのコンタクト領域となるN+拡散層７を形成する
（ステップ208）。絶縁膜を選択的に開口しコンタクト
部を形成する（ステップ209）。尚、絶縁層５はこの状
態におけるものを示している。その後、Alを蒸着し配線
９を形成し（ステップ210）、熱処理を施し（ステップ2
11）コンタクトを取る。そうした上でFe,Coを含みNiを
主成分とした強磁性体、即ちNi/Co膜，あるいはNi/Fe膜
の薄膜から成るMR素子10を真空蒸着法にて200〜2000Å
程度蒸着し、ホトエッチングを行い所定パターンを形成
する（ステップ212）。さらに、上述のようにして形成
されるバイポーラIC,MR素子を保護するための保護膜11
を形成した（ステップ213）後、電極端子部分の保護膜1
1を除去し、開口部12を形成して電極端子を形成する。
最後にMR素子10,保護膜11形成により変動したトランジ
スタ特性の回復,MR素子10の膜質改善等を行うために熱
処理を行う（ステップ215）。FIG. 3 is a sectional view showing a conventionally conceivable structure of a magnetic detection device in which such an MR element and an IC are integrally formed. The manufacturing process of this magnetic detection device will be described with reference to FIG. First, using a P-type Si wafer 1 (Step 20
0), the surface is thermally oxidized (step 201) and a predetermined region is opened. The N + type buried layer 2 is formed by diffusing Sb (antimony) or As (arsenic) from the opened region (step 202). After removing the thermal oxide film formed in step 201, epitaxial growth is performed to form an N − type epitaxial layer 3 having a low impurity concentration (step 20
3). After thermally oxidizing the surface of the epitaxial layer 3 (step 204), a portion to be an isolation region is opened to form an isolation region 4 in which B (boron) is diffused (step 205). Then, after selectively forming an insulating film made of SiO 2, B is diffused to form a base region.
A P + type diffusion layer 6 is formed (step 207), and P is similarly diffused to form an emitter region and an N + diffusion layer 7 to be a contact region with the collector (epitaxial layer 3) (step 208). The insulating film is selectively opened to form a contact portion (step 209). The insulating layer 5 is shown in this state. Then, Al is vapor-deposited to form the wiring 9 (step 210) and heat treatment is performed (step 2).
11) Get in touch. Then, the MR element 10 composed of a ferromagnetic material containing Fe and Co and having Ni as a main component, that is, a Ni / Co film or a thin film of Ni / Fe film is used for 200 to 2000 Å by vacuum deposition.
After vapor deposition, photoetching is performed to form a predetermined pattern (step 212). Furthermore, a protective film 11 for protecting the bipolar IC and MR element formed as described above.
After forming (step 213), the protective film 1 of the electrode terminal portion
1 is removed, an opening 12 is formed, and an electrode terminal is formed.
Finally, heat treatment is performed to recover the transistor characteristics that have changed due to the formation of the MR element 10 and the protective film 11 and to improve the film quality of the MR element 10 (step 215).
上記の製造工程において、バイポーラICのN+拡散層７を
形成する工程（ステップ208）は、通常POCl3ガスを用い
た気相拡散にて行われるが、この時、拡散源のＰが絶縁
膜５内にも拡散してしまい、その表面にはPSG膜８が形
成されている。このPSG膜８はゲッタリング等の作用が
あるので、通常のICではそのまま残されるものである
が、上述のような磁気検出装置において、このPSG膜８
上にMR素子10を形成した場合、ガラス基板上やSiウェハ
ーに何らバイポーラICを形成することなく単にその表面
を熱酸化して形成したSiO2膜上に堆積したMR素子と比較
して、その電気磁気特性等の膜質が著しく劣ってしまう
事がわかった。In the above manufacturing process, the step of forming the N + diffusion layer 7 of the bipolar IC (step 208) is usually performed by vapor phase diffusion using POCl 3 gas. At this time, the diffusion source P is an insulating film. The PSG film 8 is also formed on the surface of the PSG film 5. Since the PSG film 8 has a function of gettering or the like, it is left as it is in an ordinary IC. However, in the magnetic detection device as described above, the PSG film 8 is used.
When the MR element 10 is formed on the MR element 10 compared to the MR element deposited on the SiO 2 film formed by simply thermally oxidizing the surface of the glass substrate or without forming any bipolar IC on the Si wafer, It was found that the film quality such as electro-magnetic properties was remarkably deteriorated.
〔発明が解決しようとする課題〕 本願発明者達は上記事実に鑑みて、さらに実験的考察を
重ねた結果、ICの絶縁膜５に近い部分のMR素子10ほどそ
の膜質が劣化していることが分かった。そしてこの劣化
は、ICの絶縁膜５表面のPSG膜８に含まれている不純物
としてのＰが熱処理（ステップ215）によりMR素子10と
反応したことに起因していることがわかった。[Problems to be Solved by the Invention] In view of the above facts, the inventors of the present invention further conducted experimental consideration, and as a result, the film quality of the MR element 10 nearer to the insulating film 5 of the IC was deteriorated. I understood. It was found that this deterioration was caused by the fact that P as an impurity contained in the PSG film 8 on the surface of the insulating film 5 of the IC reacted with the MR element 10 by the heat treatment (step 215).
本発明はこの点に基づき成されたものであり、MR素子形
成後の熱処理工程を経てもその膜質が劣化しないMR素子
を基板上に形成した磁気検出装置を提供することを目的
としている。The present invention is made based on this point, and an object of the present invention is to provide a magnetic detection device having an MR element formed on a substrate, the MR element of which the film quality does not deteriorate even after a heat treatment step after the MR element is formed.
上記目的を達成するために、本発明の磁気検出装置は基
板と、 前記基板の主表面上に形成され、不純物を含んだ膜であ
り、少なくともその一部に前記不純物が所定濃度以下の
領域を有する二酸化シリコン膜と、 前記二酸化シリコン膜の前記不純物が所定濃度以下の領
域上に形成され、Niを主成分として含んだ薄膜の強磁性
磁気抵抗素子と、 を備える事を特徴としている。In order to achieve the above object, a magnetic detection device of the present invention is a substrate, a film formed on the main surface of the substrate, containing impurities, at least a portion of which has a region where the impurities have a predetermined concentration or less. And a thin film ferromagnetic magnetoresistive element containing Ni as a main component, which is formed on a region of the silicon dioxide film in which the impurities have a predetermined concentration or less.
又、前記不純物をＰとし、前記所定濃度を５P2O5モル％
としても良い。Further, the impurity is P and the predetermined concentration is 5 P 2 O 5 mol%
Also good.
以下、本発明を図面に示す実施例を用いて説明する。 The present invention will be described below with reference to the embodiments shown in the drawings.
第１図は本実施例の構成を表わす断面図であり、MR素子
10からの信号を処理するバイポーラIC部A,MR素子部Ｂお
よび電極端子部Ｃを示している。この磁気検出装置の製
造工程は基本的には第３図を用いて説明した本願発明者
達が本発明前に試作，実験を行った磁気検出装置の製造
工程と同様であり、二酸化シリコン（SiO2）より成る絶
縁膜５の上層部には、バイポーラICのN+拡散層７形成時
における拡散源Ｐが拡散しており、不純物としてのＰを
高濃度に含むPSG膜８が形成されている。FIG. 1 is a cross-sectional view showing the structure of this embodiment.
The bipolar IC section A, the MR element section B and the electrode terminal section C for processing the signal from 10 are shown. The manufacturing process of this magnetic detection device is basically the same as the manufacturing process of the magnetic detection device that the inventors of the present application described with reference to FIG. The diffusion source P at the time of forming the N + diffusion layer 7 of the bipolar IC is diffused in the upper layer portion of the insulating film 5 made of 2 ), and the PSG film 8 containing P as an impurity at a high concentration is formed. .
本実施例によると第５図に示す製造フローにおいて、ス
テップ208のN+拡散層７の形成工程後に、ステップ300に
示すPSG膜８の除去工程を実施する。According to the present embodiment, in the manufacturing flow shown in FIG. 5, after the step of forming the N + diffusion layer 7 in step 208, the step of removing the PSG film 8 shown in step 300 is performed.
このステップ300ではMR素子部ＢのMR素子10形成予定領
域のPSG膜８を部分的に除去することにより開口部13を
形成し、その下層であるＰを低濃度に含むか、ほとんど
含まない絶縁膜５を露出している。具体的にはエッチン
グ液としてフッ化アンモニウム，フッ酸および水の混合
液を用いＰを比較的高濃度に含む部分と、そうでない部
分とのエッチング速度の違いを利用してＰを高濃度に含
むPSG膜８を選択的に除去する。この場合、エッチング
液におけるフッ酸の比を小さくすることにより全体のエ
ッチング速度が低下し、制御性が良くなる。In this step 300, the opening 13 is formed by partially removing the PSG film 8 in the area where the MR element 10 is to be formed in the MR element portion B, and the underlying layer P containing a low concentration or containing almost no P is isolated. The membrane 5 is exposed. Specifically, a mixture of ammonium fluoride, hydrofluoric acid and water is used as an etching liquid, and P is contained in a high concentration by utilizing the difference in etching rate between a portion containing P in a relatively high concentration and a portion not containing P. The PSG film 8 is selectively removed. In this case, by lowering the ratio of hydrofluoric acid in the etching solution, the overall etching rate is lowered and the controllability is improved.
そして、ステップ209〜211を経た後、この開口部13にMR
素子10のパターンを形成している。Then, after going through steps 209 to 211, MR is inserted in this opening 13.
The pattern of the element 10 is formed.
第４図はMR素子10としてNi/Co膜を用いた場合のPSG膜８
のリン濃度とMR素子10の抵抗変化率との関係を表してい
る。一般的に、バイポーラICのエミッタ領域であるN+拡
散層７形成時には、リン濃度10〜20P2O5モル％のPSG膜
８が形成されるため、MR素子10の抵抗変化率が不純物を
含まない二酸化シリコン膜（即ちリン濃度０P2O5モル
％）上にNi/Co膜を作成した場合に比べ20％〜50％も減
少してしまうが、本実施例においてはリン濃度の高いPS
G膜８を除去しMR素子10形成予定領域の絶縁膜５のリン
濃度を５P2O5モル％以下にしているのでMR素子10とＰと
の反応が抑制され、ステップ215の熱処理工程後におい
てもMR素子10の抵抗変化率の減少をほぼ10％以下にする
ことができ、実用上問題のない電気磁気特性を有する膜
質の優れたMR素子とすることができる。又、他のIC部分
上のPSG膜８はそのまま残っているので、ゲッタリング
等の作用を期待できIC特性の劣化を防ぐことができる。Fig. 4 shows PSG film 8 when Ni / Co film is used as MR element 10.
2 shows the relationship between the phosphorus concentration of the MR element and the resistance change rate of the MR element 10. Generally, when the N + diffusion layer 7 which is the emitter region of the bipolar IC is formed, the PSG film 8 having a phosphorus concentration of 10 to 20 P 2 O 5 mol% is formed, so that the resistance change rate of the MR element 10 includes impurities. Compared to the case where a Ni / Co film is formed on a non-silicon dioxide film (that is, phosphorus concentration 0 P 2 O 5 mol%), the amount is reduced by 20% to 50%, but in this embodiment, PS having a high phosphorus concentration is used.
Since the G film 8 is removed and the phosphorus concentration of the insulating film 5 in the region where the MR element 10 is to be formed is set to 5 P 2 O 5 mol% or less, the reaction between the MR element 10 and P is suppressed, and after the heat treatment step of step 215, Also, the decrease in the rate of change in resistance of the MR element 10 can be reduced to about 10% or less, and an MR element with excellent film quality having electromagnetic properties without practical problems can be obtained. Further, since the PSG film 8 on the other IC portion remains as it is, the action such as gettering can be expected and the deterioration of the IC characteristics can be prevented.
次に、本発明の他の実施例を説明する。本実施例は上記
実施例におけるバイポーラICのN+拡散層形成工程におけ
る拡散源としてAs（ヒ素）を使用した例である。本実施
例における磁気検出装置の製造工程も基本的に第３図を
用いて説明した製造工程と同様であり、同一工程で良い
工程はその説明を省略する。本実施例においてはガス状
態にて危険物質とされるAsを用いているので、ステップ
208のN+拡散層７の形成工程はイオン注入法にて行う。
このステップ208を経ると、絶縁膜５の表面部分にはAs
が貯った状態になっており、次のステップ300にてMR素
子形成予定領域の絶縁膜５をフッ酸系のエッチャントを
用いて約1000Å程度エッチングし、Asをほとんど含まな
い絶縁膜５を露出する。Next, another embodiment of the present invention will be described. This embodiment is an example in which As (arsenic) is used as a diffusion source in the N + diffusion layer forming step of the bipolar IC in the above embodiment. The manufacturing process of the magnetic detection device in this embodiment is basically the same as the manufacturing process described with reference to FIG. 3, and the description of the processes that may be the same will be omitted. In this embodiment, As, which is a dangerous substance in a gas state, is used.
The N + diffusion layer 7 of 208 is formed by an ion implantation method.
After this step 208, the As
In the next step 300, the insulating film 5 in the MR element formation planned region is etched about 1000Å with a hydrofluoric acid-based etchant to expose the insulating film 5 containing almost no As. To do.
第６図はMR素子10としてNi/Co膜を用いた場合の絶縁膜
５の表面部分のAs（ヒ素）濃度とMR素子10の抵抗変化率
との関係を表している。一般的にバイポーラICのエミッ
タ領域であるN+拡散層７形成時には絶縁膜５の表面部分
に１×1021（1/cm3）のAsが貯るためにMR素子10の抵抗
変化率が不純物を含まない二酸化シリコン膜上にNi/Co
膜を作成した場合に比べ40％も減少してしまうが、この
図からわかるようにステップ300にてエッチングした結
果露出された絶縁膜５の表面濃度が１×1017（1/cm3）
以下になるように制御すれば抵抗変化率の減少をほぼ10
％以下にすることができ、実用上問題のない電気磁気特
性を有する膜質の優れたMR素子とすることができる。FIG. 6 shows the relationship between the As (arsenic) concentration in the surface portion of the insulating film 5 and the resistance change rate of the MR element 10 when a Ni / Co film is used as the MR element 10. Generally, when the N + diffusion layer 7, which is the emitter region of a bipolar IC, is formed, 1 × 10 21 (1 / cm 3 ) of As accumulates on the surface portion of the insulating film 5, so that the resistance change rate of the MR element 10 is an impurity. Ni / Co on a silicon dioxide film that does not contain
Although it is reduced by 40% compared to the case where the film is formed, as can be seen from this figure, the surface concentration of the insulating film 5 exposed as a result of etching in step 300 is 1 × 10 17 (1 / cm 3 ).
If the control is performed as follows, the decrease in the resistance change rate will be reduced to about 10
% Or less, and it is possible to obtain an MR element having excellent film quality, which has electromagnetic properties without practical problems.
尚、二酸化シリコンにAsをイオン注入する場合には、As
は二酸化シリコン中に深く導入されることがなく、通
常、イオン注入時における加速エネルギーを130KeVにし
た時には500Å程度の深さに注入され、又、現在の技術
レベルの限界では加速エネルギーを160KeVにしたとして
も注入深さはせいぜい700Å程度である。従って、上述
のように絶縁膜５を1000Å程度エッチングすればほとん
どのAsが除去でき、抵抗変化率はほとんど減少しなくな
る。When As is ion-implanted into silicon dioxide,
Is not deeply introduced into silicon dioxide, and is normally implanted at a depth of about 500Å when the acceleration energy at the time of ion implantation is 130 KeV, and at the limit of the current technical level, the acceleration energy is 160 KeV. Even so, the implantation depth is at most about 700Å. Therefore, as described above, most of As can be removed by etching the insulating film 5 by about 1000 Å, and the resistance change rate hardly decreases.
以上、本発明を上記実施例を用いて説明したが、本発明
はそれらに限定されることなくその主旨を逸脱しない限
り、例えば以下に示す如く種々変形可能である。Although the present invention has been described with reference to the above embodiments, the present invention is not limited to these embodiments and can be variously modified as shown below, for example, without departing from the gist thereof.
二酸化シリコン膜に含む不純物としてはP,Asの他に
Ｂ等であっても良く、従ってMR素子は所定濃度以下の不
純物（B,P）を有するBPSG膜、あるいはBSG膜上に形成し
たものであっても良い。又、MR素子として用いる膜は、
Ni/Fe膜であっても良く、上述のNi/Co膜と比較すると抵
抗変化率の値は小さくなるが、磁区構造が同じである事
から特性は同じ傾向になる。このように、二酸化シリコ
ン膜に含む不純物、MR素子は任意の物質を選択すること
ができ、要はステップ215における熱処理においてその
不純物がMR素子中に拡散していくようなものであれば何
でも良い。これはその拡散に起因して抵抗変化率が減少
するという考えるからである。Impurities contained in the silicon dioxide film may be B and the like in addition to P and As. Therefore, the MR element is a BPSG film having impurities (B, P) at a predetermined concentration or less, or formed on the BSG film. It may be. The film used as the MR element is
A Ni / Fe film may be used, and the resistance change rate is smaller than that of the above Ni / Co film, but the characteristics tend to be the same because the magnetic domain structure is the same. As described above, the impurities contained in the silicon dioxide film and the MR element can be selected as desired, and any substance may be used as long as the impurities diffuse into the MR element during the heat treatment in step 215. . This is because the resistance change rate decreases due to the diffusion.
基板内に形成されるICはバイポーラICの他に例えば
MOSIC等であっても良い。In addition to bipolar ICs, ICs formed on the substrate are, for example,
It may be MOSIC or the like.
以上述べたように本発明の請求項１によると、二酸化シ
リコン膜の不純物が所定濃度以下の領域上にMR素子を形
成しているので、MR素子の膜質の劣化を抑制できるとい
う効果がある。As described above, according to the first aspect of the present invention, since the MR element is formed on the region of the silicon dioxide film where the impurities have a predetermined concentration or less, it is possible to suppress the deterioration of the film quality of the MR element.
又、請求項２によると、MR素子の抵抗変化率の減少を10
％以下にすることができるという効果がある。Further, according to claim 2, the reduction of the resistance change rate of the MR element is reduced by 10
There is an effect that it can be made less than or equal to%.
第１図は本発明の実施例１の磁気検出装置を示す断面
図、第２図は従来の磁気検出装置の構成図、第３図は本
願発明者達が本発明の前に試作，実験を行った磁気検出
装置の断面図、第４図はPSG膜のリン濃度とMR素子の抵
抗変化率との関係を表わすグラフ、第５図は磁気検出装
置の製造工程を表わすフロー、第６図はヒ素濃度とMR素
子の抵抗変化率との関係を表すグラフである。 １……Siウェハ,5……絶縁膜,7……N+拡散層,8……PSG
膜,10……MR素子,13……開口部。FIG. 1 is a sectional view showing a magnetic detection device according to a first embodiment of the present invention, FIG. 2 is a block diagram of a conventional magnetic detection device, and FIG. FIG. 4 is a cross-sectional view of the magnetic detection device, a graph showing the relationship between the phosphorus concentration of the PSG film and the resistance change rate of the MR element, FIG. 5 is a flow chart showing the manufacturing process of the magnetic detection device, and FIG. 6 is a graph showing the relationship between the arsenic concentration and the resistance change rate of the MR element. 1 …… Si wafer, 5 …… insulating film, 7 …… N + diffusion layer, 8 …… PSG
Membrane, 10 ... MR element, 13 ... Aperture.
Claims (3)
り、少なくともその一部に前記不純物が所定濃度以下の
領域を有する二酸化シリコン膜と、 前記二酸化シリコン膜の前記不純物が所定濃度以下の領
域上に形成され、Niを主成分として含んだ薄膜の強磁性
磁気抵抗素子と、 を備える事を特徴とする磁気検出装置。1. A substrate, a silicon dioxide film formed on the main surface of the substrate and containing impurities, and a silicon dioxide film having a region in which at least a portion of the impurities has a predetermined concentration or less, and the silicon dioxide film. And a thin film ferromagnetic magnetoresistive element containing Ni as a main component, wherein the impurity is formed on a region having a predetermined concentration or less.
濃度は５P2O5モル％のリン濃度である請求項１の磁気検
出装置。2. The magnetic detection device according to claim 1, wherein the impurity is P (phosphorus), and the predetermined concentration is a phosphorus concentration of 5 P 2 O 5 mol%.
濃度は１×1017cm-3のヒ素濃度である請求項１の磁気検
出装置。3. The magnetic detector according to claim 1, wherein the impurity is As (arsenic), and the predetermined concentration is an arsenic concentration of 1 × 10 17 cm −3 .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63178790A JPH0719924B2 (en) | 1988-04-30 | 1988-07-18 | Magnetic detection device |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10851888 | 1988-04-30 | ||
| JP63-108518 | 1988-04-30 | ||
| JP63178790A JPH0719924B2 (en) | 1988-04-30 | 1988-07-18 | Magnetic detection device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0228385A JPH0228385A (en) | 1990-01-30 |
| JPH0719924B2 true JPH0719924B2 (en) | 1995-03-06 |
Family
ID=26448374
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63178790A Expired - Lifetime JPH0719924B2 (en) | 1988-04-30 | 1988-07-18 | Magnetic detection device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0719924B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4294151C2 (en) * | 1991-12-03 | 1998-02-05 | Denso Corp | Magnetoresistive element and manufacturing method therefor |
-
1988
- 1988-07-18 JP JP63178790A patent/JPH0719924B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0228385A (en) | 1990-01-30 |
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