JPH0719794B2 - Bonding stage of film carrier - Google Patents

Description

TECHNICAL FIELD The present invention relates to a bonding stage of a film carrier.

Conventional Technology Conventional technology will be described with reference to FIG. First, as shown in FIG. 2 (a), the semiconductor element 11 is heated by the stage 12 and fixed by the vacuum holes 13, and the projection electrodes 14 formed on the electrodes of the semiconductor element 11 and the inner leads of the film carrier. Align 15 with. Next, as shown in FIG. 2 (b), the inner lead 15 of the film carrier and the protruding electrode 14 formed on the electrode of the semiconductor element 11 are joined by thermocompression bonding by the heated bonding tool 16. Next, the pressure is released as shown in FIG. 2 (c). In FIG. 2, 17 is a polyimide tape of the film carrier.

However, in the conventional method, when the inner leads of the film carrier are bonded by thermocompression bonding to the protruding electrodes formed on the electrodes of the semiconductor element with the bonding tool, the polyimide of the film carrier is used together with the inner leads. The tape is also pushed down together, and in this state, the inner lead and the protruding electrode are joined. Therefore, when the pressure of the bonding tool and the fixation of the semiconductor element by vacuum are released, the polyimide tape returns to its original state, so that the inner lead and the edge of the semiconductor element easily come into contact with each other, and the inner lead semiconductor element during operation is separated. It may be short-circuited and broken, or the semiconductor element may be broken. As one of the solutions, there is a method of increasing the distance between the inner lead and the protruding electrode in the step of aligning the inner lead of the film carrier with the protruding electrode formed on the electrode of the semiconductor element. This is not preferable because it causes the positional deviation between the inner lead and the protruding electrode.

Means for Solving the Problems The present invention provides a first groove having substantially the same size as a device hole formed in a film carrier, and an outer size of a semiconductor element formed on a bottom surface of the first groove. It is the bonding stage of the film carrier provided with the 2nd groove | channel which has substantially the same dimension.

The present invention has the above-described structure, which prevents the polyimide tape of the film carrier from being pushed down by the first groove together with the bonding tool, prevents the edge touch of the inner lead to the semiconductor element, and makes the semiconductor element reliable in the film carrier. Highly implemented. Further, since the leads are formed at the same time when the inner leads and the protruding electrodes are joined, the number of steps can be reduced.

Embodiment FIG. 1 shows an embodiment of the present invention. First, as shown in FIG. 1A, the semiconductor element 3 is inserted into the second groove 2 of the bonding stage 1, and the semiconductor element 3 is fixed by the vacuum hole 4 provided at the bottom of the bonding stage 1. . Next, the inner lead 5 of the film carrier is aligned with the protruding electrode 7 of the semiconductor element 3 heated to 150 ° C. by the stage 6. The inner lead of the film carrier used is a Cu lead having a thickness of 35 μm and a lead of 0.4 μm. It is Sn-plated and has a protruding electrode 7 of the semiconductor element 3.
Has a surface layer of Au and a thickness of 30 μm. Then, as shown in FIG. 1 (b), the inner lead 5 of the film carrier and the protruding electrode 7 of the semiconductor element 3 are bonded by the bonding tool 8 heated to 450 ° C., and at the same time, the first lead having a depth of 25 μm is bonded. The inner lead 5 is formed by the groove 9 and the bonding tool 8. This time,
Since the portion of the film carrier where the polyimide tape 17 is present is fixed so as not to move downward by the convex portion on the outside of the first groove 9 of the bonding stage 1, the inner lead 5 can be easily formed. it can. Further, it is preferable that the depth of the second groove 2 be smaller than the thickness of the semiconductor element 3 so that the inner lead 5 does not come into contact with the bonding stage 1. Next, as shown in FIG. 1 (c), the fixing of the semiconductor element 3 by pressure and vacuum by the bonding tool 8 is released.

As described above, according to the present invention, when the inner lead of the film carrier and the protruding electrode of the semiconductor element are joined, the inner lead is formed by the bonding stage and the bonding tool of the present invention and the edge to the semiconductor element is formed. Touch can be prevented, and highly reliable mounting is possible. Moreover, since the joining and the forming can be performed at the same time, the process can be shortened.

[Brief description of drawings]

FIG. 1 is a process sectional view showing a bonding method using a bonding stage in one embodiment of the present invention, and FIG. 2 is a process sectional view of a conventional example. 2 ... second groove, 3 ... semiconductor element, 4 ... vacuum hole, 5
...... Inner lead, 6 …… Stage, 7 …… Protruding electrode, 8 …… Bonding tool, 9 …… First groove, 17…
… Polyimide tape.

Claims (2)

[Claims] 1. A first groove having substantially the same size as a device hole formed in a film carrier, and a first groove having substantially the same size as the outer size of a semiconductor element formed on the bottom surface of the first groove. A film carrier bonding stage having two grooves. 2. The film carrier bonding stage according to claim 1, wherein the second groove is shallower than the thickness of the semiconductor element.