JPH07183322A - Device for producing uniform ball by electric-discharge machining - Google Patents

Device for producing uniform ball by electric-discharge machining

Info

Publication number
JPH07183322A
JPH07183322A JP32466693A JP32466693A JPH07183322A JP H07183322 A JPH07183322 A JP H07183322A JP 32466693 A JP32466693 A JP 32466693A JP 32466693 A JP32466693 A JP 32466693A JP H07183322 A JPH07183322 A JP H07183322A
Authority
JP
Japan
Prior art keywords
circuit
voltage
discharge
high voltage
pulse
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP32466693A
Other languages
Japanese (ja)
Inventor
Yukimasa Chiba
幸正 千葉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tekunika KK
Original Assignee
Tekunika KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tekunika KK filed Critical Tekunika KK
Priority to JP32466693A priority Critical patent/JPH07183322A/en
Publication of JPH07183322A publication Critical patent/JPH07183322A/en
Pending legal-status Critical Current

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78Apparatus for connecting with wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144Gold (Au) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78Apparatus for connecting with wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78Apparatus for connecting with wire connectors
    • H01L2224/7825Means for applying energy, e.g. heating means
    • H01L2224/783Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301Capillary
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85009Pre-treatment of the connector or the bonding area
    • H01L2224/8503Reshaping, e.g. forming the ball or the wedge of the wire connector
    • H01L2224/85035Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball"
    • H01L2224/85045Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball" using a corona discharge, e.g. electronic flame off [EFO]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00014Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

PURPOSE:To provide a device for correcting ball size to form balls of uniform diameter from metal wire. CONSTITUTION:The title device comprises a constantly keeping device of a spherical diameter is composed a constant-current feedback circuit 8 for feeding back the voltage across a resistance element 7 connected in series with a discharging gap to a pulse-width variable pulse generating circuit 11, an integrating circuit 9 for integrating fixed currents after high voltage begins to be generated, a comparison circuit 10 for comparing an output from the integrating circuit 9 with a control signal from a terminal 17 and transmitting a signal stopping the generation of high voltage when both voltage coincides, and a high-voltage generating circuit 1 for generating high voltage for discharge by an output from the pulse generating circuit 11.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は金属細線を放電加工して
先端に小球を作るとき、その球径を一定化する装置に関
する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a device for making the diameter of a small ball small when making a small ball at the tip by electric discharge machining of fine metal wires.

【0002】[0002]

【従来の技術】集積回路チップ上のパッドとリードフレ
ーム間は、ボンディングワイヤと称する金属細線で互い
に接続している。金属細線は太さ20〜30μmの「金」線
を用いることが多い。接続方法としては、一般的に熱圧
着ボールボンディング方式、超音波併用熱圧着ボールボ
ンディング方式などが採用されている。
2. Description of the Related Art Pads on an integrated circuit chip and lead frames are connected to each other by thin metal wires called bonding wires. As the thin metal wire, a “gold” wire having a thickness of 20 to 30 μm is often used. As a connection method, a thermocompression bonding ball bonding method, an ultrasonic combined thermocompression bonding ball bonding method or the like is generally adopted.

【0003】図5に示す従来技術としての熱圧着法で
は、直流高電圧発生回路1において発生させた直流高電
圧を端子2を介して放電電極3に印加する。通常は、電
極3の電圧を負電圧とし、金線側を接地としている。そ
して、キャピラリ4と称する中空の筒体を通してその先
端から金線5を下方へ引出し、金線5の先端を高圧放電
により溶融して金球を作る。この時の放電は接地された
金線と、高電圧の印加された放電電極3との間でスパー
クを起こさせて得る。この時金球の直径は線径の2〜
2.5倍であって、ボンディングの品質を良好に保つた
めには直径のばらつきを±数μmの範囲内に抑える必要
がある。
In the thermocompression bonding method as the prior art shown in FIG. 5, the high DC voltage generated in the high DC voltage generating circuit 1 is applied to the discharge electrode 3 via the terminal 2. Normally, the voltage of the electrode 3 is negative and the gold wire side is grounded. Then, the gold wire 5 is pulled out downward from the tip through a hollow cylindrical body called a capillary 4, and the tip of the gold wire 5 is melted by high pressure discharge to form a gold ball. The discharge at this time is obtained by causing a spark between the grounded gold wire and the discharge electrode 3 to which a high voltage is applied. At this time, the diameter of the gold ball is 2 to the wire diameter.
It is 2.5 times, and it is necessary to suppress the variation in diameter within a range of ± several μm in order to maintain good bonding quality.

【0004】次にキャピラリ4の上方で直前の位置に設
けられているワイヤクランプを開きキャピラリ4と金線
5とを下降して、図示しないチップのアルミニウム・パ
ッド上に前記金線5の先端に出来ている金球を熱圧着す
る。圧着後に金線5を内部に通過させているキャピラリ
4は、金線5と一緒にチップから離れ上昇して一旦停止
する。
Next, a wire clamp provided immediately above the capillary 4 is opened to lower the capillary 4 and the gold wire 5, and the tip of the gold wire 5 is placed on an aluminum pad of a chip (not shown). Thermocompression-bond the formed gold ball. The capillaries 4, which allow the gold wire 5 to pass inside after the pressure bonding, move away from the chip together with the gold wire 5 and ascend to once stop.

【0005】チップ及びリードフレームを載せているス
テージを少し動かして、次にワイヤをボンディングすべ
き箇所、例えばリードフレームの上にキャピラリが位置
するまでステージを動かす。その後キャピラリを下降さ
せ、金線を圧着する。そしてワイヤクランプを閉じてキ
ャピラリとワイヤクランプを上昇させワイヤを切断する
から、その後ワイヤクランプのみ下降させキャピラリ先
端に金線を所要量露出させる。その先端に次の放電加工
により金球を作る。以上の動作を繰り返す。
The stage on which the chip and the lead frame are mounted is slightly moved, and then the stage is moved until the capillary is positioned at a position where a wire is to be bonded next, for example, the lead frame. After that, the capillary is lowered and the gold wire is pressure bonded. Then, the wire clamp is closed to raise the capillary and the wire clamp to cut the wire, and then only the wire clamp is lowered to expose a required amount of gold wire to the tip of the capillary. A gold ball is made at the tip by the following electric discharge machining. The above operation is repeated.

【0006】このとき生成される金球の球径は、放電電
流、放電時間と金線・放電電極間の間隙によって、略定
まることが判明している。なお、放電は金線と放電電極
間の電圧が高くなったとき、その付近の空気の絶縁が破
れ、放電を開始することである。一旦放電を開始する
と、イオン化した空気が低電圧放電(300 〜700 V)を
維持していた。
It has been found that the diameter of the gold ball produced at this time is substantially determined by the discharge current, the discharge time and the gap between the gold wire and the discharge electrode. The discharge is to start discharge when the voltage between the gold wire and the discharge electrode becomes high and the insulation of the air in the vicinity thereof is broken. Once the discharge was initiated, the ionized air maintained a low voltage discharge (300-700 V).

【0007】[0007]

【発明が解決しようとする課題】従来は、放電電極を金
線に対し移動させ、金線の先端との間隙を0.5mm 程度に
狭く設定してから、高電圧を印加させることが多かっ
た。、近年になって、装置自体の簡便化と、電極移動の
機構を省略するため、電極を固定した装置も実用化され
て来た。そのときは前記間隙が1.2mm のように大きく設
定されている。 放電加工のため電極と金線の先端との
間隙が大きくなると放電電圧は4kV以上と高くなる。
放電加工により生成される球径を一定化するためには、
放電時の電流を定電流化することが有効であろうと想像
されていたが、従来技術では定電流化するための具体的
な手段を開示することがなされていなかった。
Conventionally, a high voltage is often applied after the discharge electrode is moved with respect to the gold wire and the gap between the tip of the gold wire and the tip of the gold wire is set as narrow as about 0.5 mm. In recent years, in order to simplify the device itself and to omit the electrode moving mechanism, a device with an electrode fixed has been put into practical use. At that time, the gap is set to a large value such as 1.2 mm. When the gap between the electrode and the tip of the gold wire is increased due to the electric discharge machining, the discharge voltage becomes higher than 4 kV.
In order to make the sphere diameter generated by electrical discharge machining constant,
It was thought that it would be effective to make the current at the time of discharge constant, but the prior art did not disclose any concrete means for making the current constant.

【0008】本発明の目的は、前述の欠点を改善し放電
間隙が大きくなっても放電時の放電電流を抑えることに
より、生成される球径を有効に一定化するために、球径
の補正手段を有する放電加工装置を提供することにあ
る。
The object of the present invention is to correct the sphere diameter in order to effectively stabilize the sphere diameter produced by improving the above-mentioned drawbacks and suppressing the discharge current during discharge even if the discharge gap becomes large. An object of the present invention is to provide an electric discharge machine having means.

【0009】[0009]

【課題を解決するための手段】図1は本発明の原理構成
を示すブロック図であって、1は高電圧発生回路、2は
高電圧端子、3は放電電極、6は金属細線、7は抵抗素
子、8は帰還回路、9は積分回路、10は比較回路、1
1はパルス発生回路、17は外部制御信号端子を示す。
FIG. 1 is a block diagram showing the principle configuration of the present invention, in which 1 is a high voltage generating circuit, 2 is a high voltage terminal, 3 is a discharge electrode, 6 is a thin metal wire, and 7 is a metal wire. Resistance element, 8 is feedback circuit, 9 is integration circuit, 10 is comparison circuit, 1
Reference numeral 1 is a pulse generation circuit, and 17 is an external control signal terminal.

【0010】金属細線と電極との間隙に直流高電圧を印
加して放電させ、金属細線の先端に小球を作るための作
成装置において、本発明は下記の構成としている。即
ち、前記放電間隙と直列接続された抵抗素子の両端の電
圧を定電流帰還させる帰還回路を介して印加されるパル
ス幅可変のパルス発生回路と、該パルス発生回路の出力
パルスにより高電圧を発生する高電圧発生回路と、該高
電圧発生回路による放電電流が発生した時から、所定電
流を積分する積分回路と、該積分回路出力を外部制御信
号端子からの設定値と比較し、積分回路出力が前記設定
値に達した時、前記高電圧発生回路の高電圧を停止する
信号を送出する比較回路と、で構成する。
The present invention has the following structure in a producing apparatus for producing a small sphere at the tip of a thin metal wire by applying a DC high voltage to the gap between the thin metal wire and an electrode to cause discharge. That is, a high voltage is generated by a pulse generation circuit with a variable pulse width applied through a feedback circuit that feeds back the voltage across the resistance element connected in series with the discharge gap through a constant current, and the output pulse of the pulse generation circuit. High voltage generating circuit, an integrating circuit that integrates a predetermined current from the time when the discharge current is generated by the high voltage generating circuit, compares the integrating circuit output with a set value from an external control signal terminal, and outputs the integrating circuit output. When it reaches the set value, the comparator circuit sends out a signal for stopping the high voltage of the high voltage generating circuit.

【0011】[0011]

【作用】公知の回路を使用するような高電圧発生回路1
により、所定タイミングで高電圧を発生させるから、そ
れと略同時に放電電極と金属細線との間で放電が開始さ
れる。放電電流は放電電極3、金属細線6、抵抗素子
7、帰還回路8を介してパルス発生回路11に帰還され
る。この帰還動作は帰還回路に流れる電流を一定化する
ことである。
High-voltage generating circuit 1 using a known circuit
As a result, a high voltage is generated at a predetermined timing, and at about the same time, a discharge is started between the discharge electrode and the thin metal wire. The discharge current is fed back to the pulse generation circuit 11 via the discharge electrode 3, the metal thin wire 6, the resistance element 7, and the feedback circuit 8. This feedback operation is to make the current flowing through the feedback circuit constant.

【0012】放電電流が流れるとき、抵抗素子7の両端
の電圧を積分回路8により積分する。そして比較回路1
0において、前記積分電圧Eを外部からの制御電圧と振
幅比較する。積分電圧が制御電圧と一致したとき、比較
回路10はその旨の出力信号を出力し、高電圧発生回路
1の高電圧発生を停止させる。したがって、放電電流も
停止する。
When the discharge current flows, the voltage across the resistor element 7 is integrated by the integrating circuit 8. And comparison circuit 1
At 0, the integrated voltage E is compared in amplitude with a control voltage from the outside. When the integrated voltage matches the control voltage, the comparison circuit 10 outputs an output signal to that effect and stops the high voltage generation of the high voltage generation circuit 1. Therefore, the discharge current also stops.

【0013】そのため、放電間隙の大きさが狭いときは
短時間の放電を、広いときは長時間の放電となるように
制御されるので、放電加工により得られる小球の直径
は、放電間隙の大きさに関係なく一定化される。即ち、
前記帰還回路8と、比較回路10による電圧比較とが、
球径の補正手段となっている。
Therefore, when the size of the discharge gap is narrow, the discharge is controlled to be short-time discharge, and when the discharge gap is wide, the discharge is controlled to be long-time discharge. It is constant regardless of size. That is,
The feedback circuit 8 and the voltage comparison by the comparison circuit 10 are
It is a means of correcting the ball diameter.

【0014】[0014]

【実施例】図2は本発明の実施例として、高電圧発生回
路1の構成を具体的に示す図である。図2において、2
は高電圧端子、11はパルス幅制御されるパルス発生回
路、12,13はトランジスタ、14は正電圧源端子、
15は変圧器、16は全波整流器とコンデンサとによる
整流平滑回路を示す。
FIG. 2 is a diagram specifically showing the structure of a high voltage generating circuit 1 as an embodiment of the present invention. In FIG. 2, 2
Is a high voltage terminal, 11 is a pulse generation circuit whose pulse width is controlled, 12 and 13 are transistors, 14 is a positive voltage source terminal,
Reference numeral 15 is a transformer, and 16 is a rectifying / smoothing circuit including a full-wave rectifier and a capacitor.

【0015】パルス発生回路11において発生されたパ
ルスは、その位相が180度互いにずれているためトラ
ンジスタ12,13が交互に導通して、変圧器15の二
次側に略パルス状の高圧電流を発生する。その交流は整
流平滑回路16を介して負の直流高圧となり、端子2に
おいて放電電極3と接続されている。なお、14は正電
圧の電圧源端子であって、トランジスタ12,13の動
作用電源となっている。
The pulses generated in the pulse generation circuit 11 are 180 degrees out of phase with each other, so that the transistors 12 and 13 are alternately conducted, and a substantially pulsed high-voltage current is supplied to the secondary side of the transformer 15. Occur. The alternating current becomes a negative DC high voltage through the rectifying / smoothing circuit 16 and is connected to the discharge electrode 3 at the terminal 2. Incidentally, 14 is a voltage source terminal of positive voltage, which is a power source for operating the transistors 12 and 13.

【0016】抵抗素子7は、電極3と全波整流器の接地
側との間に挿入されている。そのため抵抗素子7の両端
の電圧は、高電圧端子2から放電して流れる電流の大き
さに比例したものとなっている。抵抗素子7の両端の電
圧は帰還回路8を介してパルス幅制御されるパルス発生
回路11に帰還される。その結果、抵抗素子7を流れる
電流の一定化がなされるように、パルス幅が制御され
る。パルス幅制御されるパルス発生回路はパルス幅変調
回路と略同じ原理で動作する。
The resistance element 7 is inserted between the electrode 3 and the ground side of the full-wave rectifier. Therefore, the voltage across the resistance element 7 is proportional to the magnitude of the current flowing from the high voltage terminal 2 by discharging. The voltage across the resistance element 7 is fed back to the pulse generation circuit 11 whose pulse width is controlled via the feedback circuit 8. As a result, the pulse width is controlled so that the current flowing through the resistance element 7 is made constant. The pulse generation circuit whose pulse width is controlled operates on substantially the same principle as the pulse width modulation circuit.

【0017】図3は本発明の他の実施例として、図1に
おける電流積分回路9と、比較回路10とについて具体
的構成を示す図である。図3において、18は図2にお
ける抵抗素子7の一方端の電圧が印加される端子、19
はスイッチ、20は演算増幅器、21は積分出力を比較
回路へ入力する端子、22は積分時間を外部から制御す
るための制御用電圧の印加端子、23は差動増幅器、2
4は比較回路の出力端子を示す。
FIG. 3 is a diagram showing a specific configuration of the current integration circuit 9 and the comparison circuit 10 in FIG. 1 as another embodiment of the present invention. 3, 18 is a terminal to which the voltage at one end of the resistance element 7 in FIG.
Is a switch, 20 is an operational amplifier, 21 is a terminal for inputting an integrated output to a comparison circuit, 22 is a control voltage application terminal for externally controlling the integration time, 23 is a differential amplifier, 2
Reference numeral 4 represents an output terminal of the comparison circuit.

【0018】電流積分回路9においてはパルス発生回路
即ち高電圧発生回路の動作開始と同時にスイッチ19を
開く。そのとき端子18の電圧が演算増幅器20の出力
側即ち端子21において時間と共に上昇する積分動作を
行う。次に比較回路の端子22は積分時間の制御即ち、
放電時間を外部から設定する電圧を印加し、差動増幅器
23において、積分回路の出力と比較演算する。この電
圧値が一致したとき、比較回路の出力端子24は高電圧
発生回路1に出力信号を印加するので、高電圧発生回路
1はパルス発生動作を停止させる。その動作は例えば、
図2におけるトランジスタ12,13の接地側接続線を
切断することである。
In the current integrator circuit 9, the switch 19 is opened at the same time when the operation of the pulse generator circuit, that is, the high voltage generator circuit is started. At that time, an integration operation is performed in which the voltage of the terminal 18 rises with time at the output side of the operational amplifier 20, that is, the terminal 21. Next, the terminal 22 of the comparison circuit controls the integration time, that is,
A voltage for externally setting the discharge time is applied, and the differential amplifier 23 performs a comparison operation with the output of the integrating circuit. When the voltage values match, the output terminal 24 of the comparison circuit applies the output signal to the high voltage generation circuit 1, so that the high voltage generation circuit 1 stops the pulse generation operation. The operation is, for example,
This is to disconnect the ground side connection line of the transistors 12 and 13 in FIG.

【0019】図4に示す動作説明図により動作説明を続
ける。図4(A)において縦軸は積分電圧,端子21と
比較用電圧,端子22の電圧を示す。横軸は時間を示
す。また図4(B)において縦軸は端子24の電圧を示
す。横軸は時間である。
The description of the operation will be continued with reference to the operation explanatory diagram shown in FIG. In FIG. 4 (A), the vertical axis represents the integrated voltage, the terminal 21 and the comparison voltage, and the voltage at the terminal 22. The horizontal axis represents time. Further, in FIG. 4B, the vertical axis represents the voltage of the terminal 24. The horizontal axis is time.

【0020】積分動作開始と共に図4(A)に示すよう
に積分電圧が上昇する。そして電圧Vsとなったとき、
図3の端子24の電圧がパルス発生停止の信号を送出す
る。このとき積分動作の時間はt0 である。
When the integration operation starts, the integration voltage rises as shown in FIG. 4 (A). When the voltage becomes Vs,
The voltage at terminal 24 in FIG. 3 sends out a signal to stop the pulse generation. At this time, the time of the integration operation is t 0 .

【0021】放電間隙と、各端子の電圧、積分動作の時
間を予め較正しておけば、次に放電間隙が変化したとき
も、積分動作時間、即ち、外部からの印加電圧を変化さ
せることにより、前記t0 に対応する時間例えばt1
容易に設定することができる。
If the discharge gap, the voltage of each terminal, and the integration operation time are calibrated in advance, the integration operation time, that is, the voltage applied from the outside can be changed even when the discharge gap changes next time. , The time corresponding to t 0 , for example, t 1 can be easily set.

【0022】[0022]

【発明の効果】このようにして本発明によると、高電圧
発生回路の放電電流がパルス幅変調されるパルスのため
一定化されているので、その電流値を積分して、外部か
ら設定する時間と比較して放電時間を制御している。し
たがって、所定時間だけ放電させることが容易にできる
ので、放電間隙が変化しても金属細線の先端部の球径は
一定化される。即ち、簡易な構成の装置であっても球径
の一定化はきわめて容易に達成できる。
As described above, according to the present invention, since the discharge current of the high voltage generating circuit is constant due to the pulse of which the pulse width is modulated, the time for which the current value is integrated and set externally is set. The discharge time is controlled in comparison with. Therefore, since the discharge can be easily performed for a predetermined time, even if the discharge gap changes, the spherical diameter of the tip end portion of the thin metal wire becomes constant. That is, even if the device has a simple structure, it is extremely easy to make the sphere diameter constant.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の原理構成を示すブロック図である。FIG. 1 is a block diagram showing a principle configuration of the present invention.

【図2】本発明の実施例を示す図である。FIG. 2 is a diagram showing an example of the present invention.

【図3】本発明の他の実施例を示す図である。FIG. 3 is a diagram showing another embodiment of the present invention.

【図4】図2・図3の動作説明用の図である。FIG. 4 is a diagram for explaining the operation of FIGS. 2 and 3.

【図5】従来技術を示す図である。FIG. 5 is a diagram showing a conventional technique.

【符号の説明】[Explanation of symbols]

1 高電圧発生回路 2 高電圧端子 3 放電電極 6 金属細線 7 抵抗素子 8 帰還回路 9 電流積分回路 10 比較回路 11 パルス発生回路 17 外部制御信号端子 1 High Voltage Generation Circuit 2 High Voltage Terminal 3 Discharge Electrode 6 Metal Wire 7 Resistor 8 Feedback Circuit 9 Current Integration Circuit 10 Comparison Circuit 11 Pulse Generation Circuit 17 External Control Signal Terminal

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 金属細線と電極との間隙に直流高電圧を
印加して放電させ、金属細線の先端に小球を作るための
作成装置において、 前記放電間隙と直列接続された抵抗素子の両端の電圧を
定電流帰還させる帰還回路を介して印加されるパルス幅
可変のパルス発生回路と、 該パルス発生回路の出力パルスにより高電圧を発生する
高電圧発生回路と、 該高電圧発生回路による放電電流が発生した時から、所
定電流を積分する積分回路と、 該積分回路出力を外部制御信号端子からの設定値と比較
し、積分回路出力が前記設定値に達した時、前記高電圧
発生回路の高電圧発生を停止する信号を送出する比較回
路と、で構成することを特徴とする放電加工による球径
の一定化装置。
1. A manufacturing apparatus for applying a high DC voltage to a gap between a metal thin wire and an electrode to cause a discharge to form a small ball at the tip of the metal thin wire, wherein both ends of a resistance element connected in series with the discharge gap. A pulse generator circuit with a variable pulse width applied through a feedback circuit that feeds back the voltage of the constant current, a high voltage generator circuit that generates a high voltage by the output pulse of the pulse generator circuit, and a discharge by the high voltage generator circuit. An integrator circuit that integrates a predetermined current from the time when the current is generated, and the integrator circuit output is compared with a set value from an external control signal terminal, and when the integrator circuit output reaches the set value, the high voltage generation circuit And a comparator circuit for sending a signal for stopping the generation of the high voltage, and a device for stabilizing the diameter of a sphere by electric discharge machining, comprising:
JP32466693A 1993-12-22 1993-12-22 Device for producing uniform ball by electric-discharge machining Pending JPH07183322A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP32466693A JPH07183322A (en) 1993-12-22 1993-12-22 Device for producing uniform ball by electric-discharge machining

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP32466693A JPH07183322A (en) 1993-12-22 1993-12-22 Device for producing uniform ball by electric-discharge machining

Publications (1)

Publication Number Publication Date
JPH07183322A true JPH07183322A (en) 1995-07-21

Family

ID=18168379

Family Applications (1)

Application Number Title Priority Date Filing Date
JP32466693A Pending JPH07183322A (en) 1993-12-22 1993-12-22 Device for producing uniform ball by electric-discharge machining

Country Status (1)

Country Link
JP (1) JPH07183322A (en)

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