JPH05243315A - Electrode of wire bonder - Google Patents
Electrode of wire bonderInfo
- Publication number
- JPH05243315A JPH05243315A JP4340202A JP34020292A JPH05243315A JP H05243315 A JPH05243315 A JP H05243315A JP 4340202 A JP4340202 A JP 4340202A JP 34020292 A JP34020292 A JP 34020292A JP H05243315 A JPH05243315 A JP H05243315A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- wire
- tip
- capillary
- ring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 31
- 230000002950 deficient Effects 0.000 description 5
- 241000218202 Coptis Species 0.000 description 4
- 235000002991 Coptis groenlandica Nutrition 0.000 description 4
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/7825—Means for applying energy, e.g. heating means
- H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/78301—Capillary
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85009—Pre-treatment of the connector or the bonding area
- H01L2224/8503—Reshaping, e.g. forming the ball or the wedge of the wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Wire Bonding (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、半導体パッケージを製
造するとき使用するワイヤボンダの電極（Ｅｌｅｃｔｒ
ｏｄｅ）に関するものであり、詳しくは、該電極のチッ
プ先を環状に形成し、該電極チップ先とゴールドワイヤ
先方側端との間隔合わせを容易にし、ワイヤボンディン
グを正確・良好に行ない得るようにした、ワイヤボンダ
の電極に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electrode of a wire bonder (Electr) used for manufacturing a semiconductor package.
In detail, the tip of the electrode is formed in an annular shape so that the gap between the tip of the electrode and the end of the gold wire tip side can be easily adjusted so that the wire bonding can be performed accurately and satisfactorily. The present invention relates to a wire bonder electrode.
【０００２】[0002]
【従来の技術】一般に、半導体チップのパッドとリード
フレームのインナーリードとをゴールドワイヤにて連結
させるとき、ワイヤボンダを用いてワイヤボンディング
を行なうが、従来のワイヤボンダにおいては、図３に示
したように、電極支持部８が設置され、該電極支持部８
の下方側に電極４が電極クランプ６により掛止され、該
電極４の先方側端には棒状の電極チップ５が接着され、
該電極４の他方側端にはスパークを発生する高電圧用ケ
ーブル７が連結されていた。かつ、該電極４の側方に
は、キャピラリ２と金糸供給リール（図示されない）と
ワイヤクランプ３とが形成され、該金糸供給リールから
放出されたゴールドワイヤ１がワイヤクランプ３により
支持され、キャピラリ２を通って所望のポイントに供給
されるようになっていた。2. Description of the Related Art Generally, when a pad of a semiconductor chip and an inner lead of a lead frame are connected by a gold wire, wire bonding is performed using a wire bonder. In the conventional wire bonder, as shown in FIG. , The electrode supporting portion 8 is installed, and the electrode supporting portion 8
The electrode 4 is hooked on the lower side of the electrode by an electrode clamp 6, and a rod-shaped electrode chip 5 is adhered to the front end of the electrode 4.
A high voltage cable 7 for generating a spark was connected to the other end of the electrode 4. Further, a capillary 2, a gold thread supply reel (not shown) and a wire clamp 3 are formed on the side of the electrode 4, and the gold wire 1 discharged from the gold thread supply reel is supported by the wire clamp 3 to form a capillary. It was supposed to be supplied to the desired point through the 2.
【０００３】そして、このように構成された従来のワイ
ヤボンダにおいては、使用者が、目で見ながら、経験値
により、前記電極４の電極チップ５に、前記キャピラリ
２を通ったゴールドワイヤ１の先端部を接近させ、それ
ら電極チップ５先方端とゴールドワイヤ１先方側端とが
それぞれ所定側方向間隔および所定上下方向間隔を維持
するように合わせ、ワイヤボンダを作動させると、前記
電極４に約−２０００ボルトから−４０００ボルトの陰
の高電圧が印加し、該電極チップ５の電圧とゴールドワ
イヤ１の０ボルトとの電圧差により、それら電極チップ
５先方側端とゴールドワイヤ１先方側端間にスパークが
発生される。次いで、該ゴールドワイヤ１の先方側端の
温度が溶融点（Ｍｅｌｔｉｎｇ ｐｏｉｎｔ ：１０６
３℃）に至り、該ゴールドワイヤ１の先方側端に所定大
きさの初期ボール１′が形成される。次いで、該初期ボ
ール１′は前記キャピラリ２により所望のポイントに移
送され、所定圧力に押されてボンディングが行なわれ、
前記キャピラリ２は初期の位置に復帰される。この場
合、前記ゴールドワイヤ１に所定大きさの初期ボール
１′が形成されるためには、通常、電極チップ５の先方
側端とゴールドワイヤ１の先方側端との側方向間隔ＳＧ
が０．００１インチ、上下方向間隔ＨＧは０．０１０〜
０．０２５インチに維持されるように、使用者がそれぞ
れ合わせなければならず、もし、それら側方向間隔ＳＧ
と上下方向間隔ＨＧとがそれぞれ合わないと、所望の大
きさの初期ボール１′が形成されないので、ボンディン
グが良好に行なわれず、不良品が発生する。In the conventional wire bonder thus constructed, the tip of the gold wire 1 passing through the capillary 2 is attached to the electrode tip 5 of the electrode 4 by the user while visually observing the experience. Parts are brought close to each other, and the tip ends of the electrode tip 5 and the tip end of the gold wire 1 are aligned so as to maintain a predetermined side gap and a predetermined vertical gap, respectively. A negative high voltage of -4000 V is applied from a voltage of volt, and a spark is generated between the tip of the electrode tip 5 and the tip of the gold wire 1 due to a voltage difference between the voltage of the electrode tip 5 and 0 volt of the gold wire 1. Is generated. Next, the temperature of the tip of the gold wire 1 on the front side is melted (melting point: 106).
3 ° C.), an initial ball 1 ′ having a predetermined size is formed at the tip of the gold wire 1 on the front side. Then, the initial ball 1'is transferred to a desired point by the capillary 2 and is pressed at a predetermined pressure to perform bonding,
The capillary 2 is returned to the initial position. In this case, in order to form the initial ball 1 ′ having a predetermined size on the gold wire 1, it is normally necessary to form the lateral gap SG between the tip end of the electrode tip 5 and the tip end of the gold wire 1.
Is 0.001 inch and the vertical gap HG is 0.010 to
Each must be adjusted by the user to be maintained at 0.025 inches, if they have a lateral spacing SG
If the vertical gap HG does not match with the vertical gap HG, the initial ball 1'of a desired size is not formed, so that the bonding is not performed well and a defective product occurs.
【０００４】すなわち、それら側方向間隔ＳＧと上下方
向間隔ＨＧとがそれぞれ正確に維持されず、前記所定間
隔よりも大きい場合は、前記初期ボール１′の大きさが
所望の大きさよりも小さくなるかまたはスパークが発生
し得なくなって、キャピラリ２が所望のボンディングポ
イントに下降するとき、該キャピラリ２からゴールドワ
イヤ１が脱離され、ボンディングの行なわれないノーワ
イヤ（Ｎｏ Ｗｉｒｅ）の不良品が発生する。かつ、そ
れら側方向間隔ＳＧと上下方向間隔ＨＧとが所定間隔よ
りも小さく形成されている場合は、初期ボールの大きさ
が所望の大きさよりも大きく形成され、良好なボンディ
ングが行なわれず、やはり不良品が発生する。That is, when the lateral gap SG and the vertical gap HG are not accurately maintained and are larger than the predetermined gap, the size of the initial ball 1'is smaller than the desired size. Or, when sparks cannot occur and the capillary 2 descends to a desired bonding point, the gold wire 1 is detached from the capillary 2, and a defective non-wire product (No Wire) is generated. If the lateral gap SG and the vertical gap HG are formed smaller than the predetermined gap, the initial ball size is formed larger than the desired size, and good bonding is not performed. Good products occur.
【０００５】[0005]
【発明が解決しようとする課題】このように形成された
従来の電極においては、該電極の電極チップの先方側端
が単一点を有した線状になっているため、該電極チップ
の先方側端とゴールドワイヤ先方側端との間隔を、側方
向間隔ＳＧが０．００１インチ、上下方向間隔ＨＧが
０．０１０〜０．０２５インチになるように合わせるこ
とが極めて難しくなるという不都合な点があった。か
つ、ワイヤボンディングを行なう直前に間隔を正確に合
わせておいても、ワイヤボンディングを行なう途中に位
置が変更され、側方向間隔ＳＧおよび上下方向間隔ＨＧ
がくずれて、初期ボールの大きさが所望の大きさに形成
されず、ボンディングの不良品が発生するという不都合
な点があった。In the conventional electrode thus formed, the tip end of the electrode tip of the electrode has a linear shape having a single point, and therefore the tip side of the electrode tip is formed. It is extremely difficult to match the distance between the end and the end on the tip side of the gold wire so that the lateral distance SG is 0.001 inch and the vertical distance HG is 0.010 to 0.025 inch. there were. Moreover, even if the intervals are accurately adjusted immediately before the wire bonding is performed, the positions are changed during the wire bonding, and the lateral spacing SG and the vertical spacing HG are generated.
There is a disadvantage that the initial ball is not formed in a desired size and a defective bonding product is generated.
【０００６】本発明の目的は、上述の問題点を解決し、
キャピラリを通って供給されるゴールドワイヤと電極チ
ップの先方側端との間隔ＳＧ、ＨＧを容易に合わせ、該
間隔をボンディング作業中にも維持させて、初期ボール
の形成を良好にし、ワイヤボンディングの作業能率を向
上し得るようにした、ワイヤボンダの電極を提供するこ
とにある。The object of the present invention is to solve the above-mentioned problems,
The gaps SG and HG between the gold wire supplied through the capillary and the tip end of the electrode tip can be easily adjusted, and the gaps can be maintained even during the bonding work to improve the formation of the initial balls and improve the wire bonding. An object of the present invention is to provide an electrode for a wire bonder that can improve work efficiency.
【０００７】[0007]
【課題を解決するための手段】本発明のワイヤボンダの
電極は、電極とキャピラリとを有し、該電極の電極チッ
プとキャピラリを通るゴールドワイヤの先方側端とを所
定間隔に合わせ、ボンディングを行なうワイヤボンダで
あって、該ワイヤボンダの電極に電極チップが接着さ
れ、該電極チップの先方側端がリング状に形成され、該
リングにより電極チップ先方側端とゴールドワイヤ先方
側端との間隔合わせが容易になり、初期ボールの発生が
正確・良好に行なわれる。The electrode of the wire bonder of the present invention has an electrode and a capillary, and bonding is performed by aligning the electrode tip of the electrode and the tip of the gold wire passing through the capillary at a predetermined interval. A wire bonder, in which an electrode tip is adhered to an electrode of the wire bonder and a tip end of the electrode tip is formed in a ring shape, and the ring makes it easy to align the tip end of the electrode tip and the tip end of the gold wire. Therefore, the initial balls are generated accurately and satisfactorily.
【０００８】好ましくは、電極チップのリングは、所定
径と所定幅と所定厚さとを有して形成され、該リングに
キャピラリが挿合され下降してワイヤボンディングが行
なわれ、該キャピラリは原位置に復帰されるように形成
されるとよい。Preferably, the ring of the electrode tip is formed to have a predetermined diameter, a predetermined width and a predetermined thickness, and the capillary is inserted into the ring and lowered to perform wire bonding, and the capillary is in the original position. It may be formed so as to be restored to.
【０００９】また、好ましくは、電極チップのリング
は、環状でなく多角形状に形成されてもよい。Further, preferably, the ring of the electrode tip may be formed in a polygonal shape instead of an annular shape.
【００１０】[0010]
【作用】この発明によれば、電極チップの先方側端がリ
ング状になっているため、従来の棒状電極チップ先方側
端にゴールドワイヤ先方側端を所定間隔を有するように
合わせる場合に比べ、極めて容易に間隔合わせを行なう
ことができる。かつ、該間隔を合わせた後、リング状の
電極チップ先方側端にキャピラリが挿入された状態でボ
ンディングが行なわれ、その後、該キャピラリは初期ボ
ールの形成した位置に復帰されるようになっているた
め、初期セッティングされた間隔は作業中にも常に一定
に維持される。したがって、ワイヤボンディングの作業
が容易、正確、良好に行なわれ、不良品の発生がなくな
る。According to the present invention, since the tip end of the electrode tip is ring-shaped, compared to the case where the tip end of the gold wire tip is aligned with the tip end of the rod-shaped electrode tip so as to have a predetermined interval, The spacing can be adjusted extremely easily. Moreover, after adjusting the intervals, bonding is performed in a state where the capillaries are inserted at the tip ends of the ring-shaped electrode tips, and thereafter, the capillaries are returned to the positions where the initial balls are formed. Therefore, the initially set interval is always kept constant during the work. Therefore, the work of wire bonding is performed easily, accurately and satisfactorily, and no defective product is generated.
【００１１】[0011]
【実施例】以下、本発明の実施例に対し、図面を用いて
詳細に説明する。Embodiments of the present invention will be described in detail below with reference to the drawings.
【００１２】図１に示したように、本発明によるワイヤ
ボンダの電極においては、ワイヤボンダの所定部位に電
極４が形成され、該電極４の先方側端に電極チップ１０
が接着され、該電極チップ１０の先方側端はリング状に
形成されている。かつ、該電極４の先方側端はスパーク
発生用高電圧ケーブル７に連結され、該電極４の中央部
位は電極クランプ６により電極支持部８に掛止されてい
る。As shown in FIG. 1, in the electrode of the wire bonder according to the present invention, the electrode 4 is formed at a predetermined portion of the wire bonder, and the electrode tip 10 is formed at the front end of the electrode 4.
Are bonded, and the end on the front side of the electrode chip 10 is formed in a ring shape. A front end of the electrode 4 is connected to a high voltage cable 7 for spark generation, and a central portion of the electrode 4 is hooked on an electrode supporting portion 8 by an electrode clamp 6.
【００１３】また、前記電極チップ１０のリングは、直
径Ｄが０．０７インチに形成され、スパーク発生効率を
考慮して、所定幅ｔと所定厚さとを有するように形成す
ることが好ましい。The ring of the electrode tip 10 is preferably formed to have a diameter D of 0.07 inch and a predetermined width t and a predetermined thickness in consideration of spark generation efficiency.
【００１４】さらに、前記電極４の側方にキャピラリ２
と金糸供給リール（図示されていない）とワイヤクラン
プ３とが形成され、該金糸供給リールからゴールドワイ
ヤ１が放出され、キャピラリ２を通って所望のポイント
に供給されるようになっている。Further, a capillary 2 is provided on the side of the electrode 4.
A gold thread supply reel (not shown) and a wire clamp 3 are formed, and the gold wire 1 is discharged from the gold thread supply reel and supplied to a desired point through the capillary 2.
【００１５】かつ、該電極チップ１０のリングは、該リ
ング状に限定されず、多角形またはその他多様な形状に
形成して使用することができる。The ring of the electrode tip 10 is not limited to the ring shape, and may be formed in a polygonal shape or other various shapes.
【００１６】このように形成された本発明によるワイヤ
ボンダの電極においては、該電極の電極チップ先方側端
がリング状になっているため、該リング状の電極チップ
にゴールドワイヤの先方側端を目で見ながら容易に間隔
合わせをすることができる。In the electrode of the wire bonder according to the present invention thus formed, since the end of the electrode tip on the tip side of the electrode is ring-shaped, the tip of the gold wire is attached to the ring-shaped electrode tip. You can easily adjust the spacing while watching.
【００１７】次いで、該電極４に、−２０００Ｖ〜−４
０００Ｖの陰の高電圧を印加すると、ゴールドワイヤ１
の０電圧と電極チップ１０の陰の高電圧−２０００Ｖ〜
−４０００Ｖとの電位差により、スパーク放電が発生
し、ゴールドワイヤの先方側端が溶融して、初期ボール
１′が形成される。Then, the electrodes 4 are supplied with -2000V to -4V.
Applying a negative high voltage of 000V will cause gold wire 1
0 voltage and high voltage behind the electrode tip 10 -2000V ~
A spark discharge is generated due to the potential difference from −4000 V, and the front end of the gold wire is melted to form the initial ball 1 ′.
【００１８】次いで、初期ボール１′の形成後、キャピ
ラリ２はリング状電極チップ１０内方側に挿入下降さ
れ、該初期ボール１′がボンディングポイントに移送さ
れ、ワイヤボンディングが行なわれる。After forming the initial ball 1 ', the capillary 2 is inserted and lowered inside the ring-shaped electrode tip 10, the initial ball 1'is transferred to the bonding point, and wire bonding is performed.
【００１９】このような本発明によるワイヤボンダの電
極においては、作業者が目で見ながら、電極チップの先
方側端とゴールドワイヤの先方側との間隔合わせを行な
うので、従来の線状の両方側端を合わせる場合に比べ、
リング状と線状端とを合わせればよいので、極めて容易
であり、間隔合わせの正確度が高くなる。かつ、電極チ
ップとゴールドワイヤ先方側端間のスパーク発生におい
ても、従来は一点と一点間のスパーク発生であるため、
間隔の正確度が劣ると、初期ボールの形成が難しくなる
が、本発明は、リング状電極チップの多点とゴールドワ
イヤ先方側端一点とのスパーク発生であるため、常に所
望の大きさの初期ボール１′が容易にしかも良好に形成
される。In the electrode of the wire bonder according to the present invention as described above, since the operator visually adjusts the distance between the tip end of the electrode tip and the tip side of the gold wire, both sides of the conventional linear wire can be observed. Compared to the case of matching the edges,
Since it suffices to match the ring-shaped end and the linear end, it is extremely easy and the accuracy of spacing is increased. Moreover, even when sparks occur between the electrode tip and the front end of the gold wire, conventionally, there is sparking between one point and one point.
If the accuracy of the spacing is inferior, it is difficult to form the initial ball. The ball 1'is easily and satisfactorily formed.
【００２０】[0020]
【発明の効果】以上説明したように、本発明によるワイ
ヤボンダの電極においては、電極チップ先方側端がリン
グ状に形成されているため、作業者が従来の棒状の電極
チップに比べ、極めて容易に電極チップ先方側端とゴー
ルドワイヤ先方側端との間隔合わせを行ない得る効果が
ある。かつ、ワイヤボンディングの際、リング状の電極
チップにキャピラリが挿入され、下降してボンディング
が行なわれ、該キャピラリが復帰するようになっている
ため、所望の大きさの初期ボールが容易、正確、良好に
形成され、不良品のないワイヤボンディングが行なわれ
るという効果がある。As described above, in the electrode of the wire bonder according to the present invention, the end on the tip side of the electrode tip is formed in a ring shape, so that the operator can very easily compare with the conventional rod-shaped electrode tip. There is an effect that the distance between the tip of the electrode tip and the tip of the gold wire can be adjusted. And, at the time of wire bonding, the capillary is inserted into the ring-shaped electrode tip, and the bonding is performed by descending, and the capillary is adapted to be restored, so that the initial ball of a desired size can be easily and accurately, There is an effect that the wire is formed well and there is no defective product.
【図１】本発明によるワイヤボンダの電極が装着された
ワイヤボンダの概略構成図である。FIG. 1 is a schematic configuration diagram of a wire bonder to which an electrode of the wire bonder according to the present invention is attached.
【図２】本発明によるワイヤボンダ電極チップを示した
一部平面図である。FIG. 2 is a partial plan view showing a wire bonder electrode tip according to the present invention.
【図３】従来のワイヤボンダの電極が装着されたワイヤ
ボンダ概略構成図である。FIG. 3 is a schematic configuration diagram of a wire bonder to which electrodes of a conventional wire bonder are attached.
１ ゴールドワイヤ １′ 初期ボール ２ キャピラリ ３ クランプ ４ 電極 ６ 電極クランプ ７ ケーブル １０ 電極チップ なお、各図中、同一符号は同一または相当部分を示す。 1 Gold Wire 1'Initial Ball 2 Capillary 3 Clamp 4 Electrode 6 Electrode Clamp 7 Cable 10 Electrode Chip In each figure, the same reference numerals indicate the same or corresponding parts.
Claims (3)
し、該電極（４）の電極チップ（１０）と前記キャピラ
リ（２）を通るゴールドワイヤ（１）の先方側端とを所
定間隔に合わせ、ボンディングを行なうワイヤボンダで
あって、 該ワイヤボンダの前記電極（４）に電極チップ（１０）
が接着され、該電極チップ（１０）の先方側端がリング
状に形成され、該リングにより前記電極チップ（１０）
先方側端とゴールドワイヤ（１）先方側端との間隔合わ
せが容易になり、初期ボール（１′）の発生が正確・良
好に行なわれる、ワイヤボンダの電極。1. An electrode (4) and a capillary (2) are provided, and an electrode tip (10) of the electrode (4) and a front end of a gold wire (1) passing through the capillary (2) are predetermined. A wire bonder for performing bonding according to a space, wherein an electrode chip (10) is attached to the electrode (4) of the wire bonder.
Are bonded to each other, and the tip end of the electrode tip (10) is formed into a ring shape, and the ring causes the electrode tip (10)
An electrode of a wire bonder in which the distance between the front end and the front end of the gold wire (1) can be easily adjusted, and the initial ball (1 ') can be generated accurately and satisfactorily.
グに前記キャピラリ（２）が挿合され下降してワイヤボ
ンディングが行なわれ、該キャピラリ（２）は原位置に
復帰されるように形成された、請求項１記載のワイヤボ
ンダの電極。2. A ring of the electrode tip (10) is formed with a predetermined diameter, a predetermined width and a predetermined thickness, and the capillary (2) is inserted into the ring and lowered to perform wire bonding. The electrode of the wire bonder according to claim 1, wherein the capillary (2) is formed so as to return to its original position.
ヤボンダの電極。3. The electrode of the wire bonder according to claim 1, wherein the ring of the electrode tip (10) is formed in a polygonal shape instead of an annular shape.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019910023985A KR940008316B1 (en) | 1991-12-23 | 1991-12-23 | Electrode of wire bonder |
| KR23985 | 1991-12-23 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH05243315A true JPH05243315A (en) | 1993-09-21 |
Family
ID=19325639
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4340202A Withdrawn JPH05243315A (en) | 1991-12-23 | 1992-12-21 | Electrode of wire bonder |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPH05243315A (en) |
| KR (1) | KR940008316B1 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2003036710A1 (en) * | 2001-10-23 | 2003-05-01 | Sumitomo Electric Wintec, Incorporated | Bonding wire |
| CN100421228C (en) * | 2003-10-20 | 2008-09-24 | 住友电气工业株式会社 | Bonding wire and integrated circuit device using the same |
| DE102016103564A1 (en) | 2015-03-31 | 2016-10-06 | Honda Motor Co., Ltd. | Clutch control system |
-
1991
- 1991-12-23 KR KR1019910023985A patent/KR940008316B1/en not_active IP Right Cessation
-
1992
- 1992-12-21 JP JP4340202A patent/JPH05243315A/en not_active Withdrawn
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2003036710A1 (en) * | 2001-10-23 | 2003-05-01 | Sumitomo Electric Wintec, Incorporated | Bonding wire |
| CN100421228C (en) * | 2003-10-20 | 2008-09-24 | 住友电气工业株式会社 | Bonding wire and integrated circuit device using the same |
| DE102016103564A1 (en) | 2015-03-31 | 2016-10-06 | Honda Motor Co., Ltd. | Clutch control system |
Also Published As
| Publication number | Publication date |
|---|---|
| KR930014913A (en) | 1993-07-23 |
| KR940008316B1 (en) | 1994-09-12 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A300 | Application deemed to be withdrawn because no request for examination was validly filed |
Free format text: JAPANESE INTERMEDIATE CODE: A300 Effective date: 20000307 |