JPH0715054A - Magneto-resistance element - Google Patents
Magneto-resistance elementInfo
- Publication number
- JPH0715054A JPH0715054A JP5150928A JP15092893A JPH0715054A JP H0715054 A JPH0715054 A JP H0715054A JP 5150928 A JP5150928 A JP 5150928A JP 15092893 A JP15092893 A JP 15092893A JP H0715054 A JPH0715054 A JP H0715054A
- Authority
- JP
- Japan
- Prior art keywords
- gold
- circuit pattern
- silicon oxide
- permalloy
- magnetoresistive element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 24
- 239000010931 gold Substances 0.000 claims abstract description 22
- 229910052737 gold Inorganic materials 0.000 claims abstract description 22
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 19
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 19
- 229910000889 permalloy Inorganic materials 0.000 claims abstract description 17
- 230000001681 protective effect Effects 0.000 claims abstract description 17
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims abstract description 15
- 239000011651 chromium Substances 0.000 claims abstract description 12
- 229910052804 chromium Inorganic materials 0.000 claims abstract description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 6
- 239000010703 silicon Substances 0.000 claims abstract description 6
- 239000000758 substrate Substances 0.000 claims abstract description 6
- 239000000696 magnetic material Substances 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 3
- 239000011229 interlayer Substances 0.000 abstract 2
- 239000010410 layer Substances 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 238000000059 patterning Methods 0.000 description 5
- 238000001312 dry etching Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 230000018109 developmental process Effects 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 229910018487 Ni—Cr Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 1
- FQMNUIZEFUVPNU-UHFFFAOYSA-N cobalt iron Chemical compound [Fe].[Co].[Co] FQMNUIZEFUVPNU-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Landscapes
- Formation Of Insulating Films (AREA)
- Hall/Mr Elements (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は磁気抵抗素子に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a magnetoresistive element.
【０００２】[0002]
【従来の技術】従来の磁気抵抗素子は、図２に示す様
に、シリコン基板１に下地用酸化シリコン２を形成後、
回路パターン形成に必要なパーマロイ３，金４，クロム
５を真空中で連続で蒸着している。その後、マスクを用
いてパターニング及びエッチングにより必要な回路パタ
ーンを形成し、しかる後、保護用酸化シリコン７を形成
し、電極部をマスクによるパターニング及びエッチング
により形成して磁気抵抗素子を得ている。2. Description of the Related Art In a conventional magnetoresistive element, as shown in FIG. 2, after a base silicon oxide 2 is formed on a silicon substrate 1,
Permalloy 3, gold 4 and chromium 5 required for circuit pattern formation are continuously vapor-deposited in a vacuum. After that, a necessary circuit pattern is formed by patterning and etching using a mask, and then a protective silicon oxide 7 is formed, and an electrode portion is formed by patterning and etching using the mask to obtain a magnetoresistive element.
【０００３】[0003]
【発明が解決しようとする課題】上述した、従来の磁気
抵抗素子では、回路パターンのパーマロイ露出部３と
「金，パーマロイ」部の側面以外はクロムで覆われてい
るが、「金，パーマロイ」部の側面は回路パターン形成
時のドライエッチングにおいて縦方向にエッチングされ
る為、クロムが付着していない「金，パーマロイ」部側
面が露出した状態になる。In the above-mentioned conventional magnetoresistive element, the permalloy exposed portion 3 of the circuit pattern and the side surface of the "gold, permalloy" portion are covered with chrome, but "gold, permalloy". Since the side surface of the portion is etched in the vertical direction in the dry etching when forming the circuit pattern, the side surface of the "gold, permalloy" portion to which chrome is not adhered is exposed.
【０００４】この為、全面に保護用酸化シリコンをスパ
ッタリング等で付着して最終的な回路パターンを形成し
ても、回路パターン表面の「保護用酸化シリコン，クロ
ム，金」構造に比べて側面は、「保護用酸化シリコン７
と金４」及び「保護用酸化シリコン７とパーマロイ３」
構造となり、特に保護用酸化シリコン７と金４との密着
性が弱いことから、保護用酸化シリコン７と金４との界
面の間隙部分から水分等が侵入して断線等の不良原因と
なりやすいという問題点があった。Therefore, even if protective silicon oxide is attached to the entire surface by sputtering or the like to form a final circuit pattern, the side surface is smaller than the "protective silicon oxide, chromium, gold" structure on the surface of the circuit pattern. , "Protective Silicon Oxide 7
And gold 4 "and" protective silicon oxide 7 and permalloy 3 "
Due to the structure, especially the adhesion between the protective silicon oxide 7 and the gold 4 is weak, so that moisture or the like easily enters the gap between the interfaces between the protective silicon oxide 7 and the gold 4 to cause defects such as disconnection. There was a problem.
【０００５】本発明の目的は上述の欠点を除去し、断線
等のない磁気抵抗素子を提供することにある。An object of the present invention is to eliminate the above-mentioned drawbacks and provide a magnetoresistive element free from disconnection and the like.
【０００６】[0006]
【課題を解決するための手段】上記目的を達成するため
に、本発明の磁気抵抗素子は、シリコン基板上に形成さ
れた酸化シリコン上に蒸着された磁気抵抗材料，金，ク
ロムから構成される回路パターンを有する磁気抵抗素子
において、前記金および磁性材料から構成される回路パ
ターン側面に保護膜を形成したことを特徴としている。In order to achieve the above object, the magnetoresistive element of the present invention comprises a magnetoresistive material, gold and chromium deposited on silicon oxide formed on a silicon substrate. A magnetoresistive element having a circuit pattern is characterized in that a protective film is formed on a side surface of the circuit pattern composed of the gold and the magnetic material.
【０００７】[0007]
【実施例】次に本発明の一実施例を図面を参照して詳細
に説明する。An embodiment of the present invention will be described in detail with reference to the drawings.
【０００８】図１（ａ）〜（ｈ）は本発明の一実施例を
説明するための工程順を示す図である。FIGS. 1A to 1H are views showing a process sequence for explaining an embodiment of the present invention.
【０００９】まず、図１（ａ）に示すシリコン基板１に
下地用酸化シリコン２をスパッタリング法によって付着
後、磁性材料であるパーマロイ３，金４を連続的に蒸着
する（図１（ｂ））。First, after depositing the underlying silicon oxide 2 on the silicon substrate 1 shown in FIG. 1A by the sputtering method, permalloy 3 and gold 4 which are magnetic materials are continuously vapor-deposited (FIG. 1B). .
【００１０】次に、図１（ｃ）に示す様に任意の回路パ
ターンを有するマスクを用いてレジスト塗布・露光・現
像のパターニングを行なったあと、ドライエッチング法
により回路パターン形成に必要なパーマロイ３，３′，
金４，４′を残して他は除去する（図１（ｄ））。その
後、図１（ｅ）に示す様にセンサー部を形成するパーマ
ロイ３′上の金４′を除去してパーマロイ３′を残し、
図１（ｆ）に示す様に全面にクロムを蒸着することによ
って磁気抵抗素子の表面及び側面にクロムを付着させ
る。このときのクロムの厚さは約１００〜２００μｍで
ある。Next, as shown in FIG. 1 (c), resist coating, exposure, and development patterning is performed using a mask having an arbitrary circuit pattern, and then Permalloy 3 necessary for forming a circuit pattern is formed by a dry etching method. , 3 ',
Gold 4 and 4'are left and the others are removed (FIG. 1 (d)). Then, as shown in FIG. 1 (e), the gold 4'on the permalloy 3'that forms the sensor portion is removed to leave the permalloy 3 ',
As shown in FIG. 1 (f), chromium is deposited on the entire surface to deposit chromium on the surface and side surfaces of the magnetoresistive element. At this time, the thickness of chromium is about 100 to 200 μm.
【００１１】次に図１（ｇ）に示す様に任意の回路パタ
ーンを有するマスクを用いてレジスト塗布・露光・現像
のパターニング及びエッチング（ドライ又はウェットエ
ッチング）を行なって電極部８の金４を露出させ、且つ
電極部８以外のパーマロイ３及び金４の表面及び側面の
クロム５を残す様にする。この後、保護用酸化シリコン
７をスパッタリング法によって全面に付着後、電極部８
を任意の回路パターンを有するマスクを用いてレジスト
塗布・露光・現像のパターニング及びエッチング（ドラ
イ又はウェットエッチング）により回路パターンを形成
する。Next, as shown in FIG. 1 (g), resist coating, exposure, and development patterning and etching (dry or wet etching) are performed using a mask having an arbitrary circuit pattern to remove the gold 4 of the electrode portion 8. It is exposed, and the chromium 5 on the surface and side surfaces of the permalloy 3 and the gold 4 other than the electrode portion 8 is left. After that, protective silicon oxide 7 is deposited on the entire surface by a sputtering method, and then an electrode portion 8 is formed.
Using a mask having an arbitrary circuit pattern, a circuit pattern is formed by resist coating, exposure, and development patterning and etching (dry or wet etching).
【００１２】なお、上述した実施例では、磁性材料とし
てパーマロイを使用したが、ニッケル−クロム，コバル
ト−鉄なども使用できる。また、保護膜としてクロムを
使用したがチタン等を使用することも可能である。Although Permalloy is used as the magnetic material in the above-mentioned embodiments, nickel-chromium, cobalt-iron, etc. can also be used. Although chromium is used as the protective film, titanium or the like can be used.
【００１３】[0013]
【発明の効果】以上説明した様に本発明では、パーマロ
イ及び金の側面にクロムを付着させることにより保護用
酸化シリコンと金との密着性が向上するため、「保護用
酸化シリコンおよび金」構造における保護用酸化シリコ
ンと金との密着性の弱さに起因する界面から水分等の混
入を阻止でき、断線等を防止できるという効果を生ず
る。As described above, in the present invention, the adhesion between the protective silicon oxide and the gold is improved by adhering chromium to the side surfaces of the permalloy and the gold, so that the "protective silicon oxide and gold" structure is obtained. In this case, it is possible to prevent the entry of water and the like from the interface due to the weak adhesion between the protective silicon oxide and gold, and to prevent the disconnection and the like.
【図１】本発明の磁気抵抗素子の製造方法を説明する
図。FIG. 1 is a diagram illustrating a method of manufacturing a magnetoresistive element according to the present invention.
【図２】従来の磁気抵抗素子の製造方法を説明する図。FIG. 2 is a diagram illustrating a conventional method of manufacturing a magnetoresistive element.
１ シリコン基板 ２ 下地用酸化シリコン ３ パーマロイ ４ 金 ５ クロム ６ レジスト ７ 保護用酸化シリコン ８ 電極部 1 Silicon Substrate 2 Underlayer Silicon Oxide 3 Permalloy 4 Gold 5 Chromium 6 Resist 7 Protective Silicon Oxide 8 Electrode
Claims (3)
ン上に蒸着された磁気抵抗材料，金，クロムから構成さ
れる回路パターンを有する磁気抵抗素子において、前記
金および磁性材料から構成される回路パターンの側面に
保護膜を形成したことを特徴とする磁気抵抗素子。1. A magnetoresistive element having a circuit pattern composed of a magnetoresistive material, gold, and chrome deposited on silicon oxide formed on a silicon substrate, wherein the circuit pattern composed of the gold and magnetic material. A magnetoresistive element having a protective film formed on the side surface of the magnetoresistive element.
特徴とする請求項１記載の磁気抵抗素子。2. The magnetoresistive element according to claim 1, wherein the magnetic material is permalloy.
する請求項１記載の磁気抵抗素子。3. The magnetoresistive element according to claim 1, wherein the protective film is chromium.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5150928A JP2601141B2 (en) | 1993-06-23 | 1993-06-23 | Magnetoresistive element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5150928A JP2601141B2 (en) | 1993-06-23 | 1993-06-23 | Magnetoresistive element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0715054A true JPH0715054A (en) | 1995-01-17 |
| JP2601141B2 JP2601141B2 (en) | 1997-04-16 |
Family
ID=15507479
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5150928A Expired - Lifetime JP2601141B2 (en) | 1993-06-23 | 1993-06-23 | Magnetoresistive element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2601141B2 (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6313382A (en) * | 1986-07-03 | 1988-01-20 | Matsushita Electric Ind Co Ltd | Magnetic sensor |
| JPS6421977A (en) * | 1987-07-16 | 1989-01-25 | Fujitsu Ltd | Magnetoresistance element |
| JPH02291185A (en) * | 1989-04-28 | 1990-11-30 | Yaskawa Electric Mfg Co Ltd | Magnetoresistance effect element |
-
1993
- 1993-06-23 JP JP5150928A patent/JP2601141B2/en not_active Expired - Lifetime
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6313382A (en) * | 1986-07-03 | 1988-01-20 | Matsushita Electric Ind Co Ltd | Magnetic sensor |
| JPS6421977A (en) * | 1987-07-16 | 1989-01-25 | Fujitsu Ltd | Magnetoresistance element |
| JPH02291185A (en) * | 1989-04-28 | 1990-11-30 | Yaskawa Electric Mfg Co Ltd | Magnetoresistance effect element |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2601141B2 (en) | 1997-04-16 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 19961126 |