JPS604944A - Photomask - Google Patents

Photomask

Info

Publication number
JPS604944A
JPS604944A JP58113238A JP11323883A JPS604944A JP S604944 A JPS604944 A JP S604944A JP 58113238 A JP58113238 A JP 58113238A JP 11323883 A JP11323883 A JP 11323883A JP S604944 A JPS604944 A JP S604944A
Authority
JP
Japan
Prior art keywords
photomask
layer
mask pattern
polyvinyl alcohol
alcohol resin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP58113238A
Other languages
Japanese (ja)
Inventor
Takayoshi Matsuyama
松山 隆義
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP58113238A priority Critical patent/JPS604944A/en
Publication of JPS604944A publication Critical patent/JPS604944A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/40Electrostatic discharge [ESD] related features, e.g. antistatic coatings or a conductive metal layer around the periphery of the mask substrate
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/48Protective coatings

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)

Abstract

PURPOSE:To protect the mask pattern of a photomask from electrostatic breakdown by sticking a polyvinyl alcohol resin layer to a face of the photomask having the mask pattern formed thereon. CONSTITUTION:A photomask 1a has a polyvinyl alcohol resin layer as a protective layer 5 stuck to a face of the photomask 1a having a mask pattern 3 formed thereon. The layer 5 is stuck by coating a polyvinyl alcohol resin soln. with a spin coater or the like in the same manner as a resist is coated in the formation of a chromium mask pattern and by drying the coated soln. The thickness of the layer 5 is uniform, and it is preferably adjusted to about 0.5- 0.8mum. The photomask 1a can be used without stripping the layer 5 even in mask alignment and exposure stages in the manufacture of a semiconductor element because the polyvinyl alcohol resin layer is transparent and has said thickness. The protecting function of the layer 5 is maintained until exposure is finished. When the photomask 1a is used again, the layer 5 is removed by washing, and a new protective layer 5 can be stuck, so the life of the photomask is prolonged.

Description

【発明の詳細な説明】 (a) 発明の技術分野 本発明は、フォトマスクに係り、特に、マスクパターン
保護の構成に関す。
DETAILED DESCRIPTION OF THE INVENTION (a) Technical Field of the Invention The present invention relates to a photomask, and particularly to a structure for protecting a mask pattern.

fbl 技術の背景 半導体装置の高集積化等に伴い、ウェハプロセスで使用
されるフォトマスクはパターンが微細化・高集積化して
、その品質確保が一段と重要になってきている。
Background of the fbl technology As semiconductor devices become more highly integrated, the patterns of photomasks used in wafer processes become finer and more highly integrated, making it even more important to ensure their quality.

フォトマスクにおける遮光性のパターンを形成する材料
には、高解像力乾板材料が多用されて来たが、銀粒子パ
ターンであるため、実用解像力や耐久性に乏しいところ
があり、近年は、所謂ハードマスクと称せられる無機薄
膜パターン、とくにクロム(Cr)パターンが採用され
るようになって来た。
High-resolution dry plate materials have often been used as materials for forming light-shielding patterns in photomasks, but because they are silver particle patterns, they lack practical resolution and durability, and in recent years, so-called hard masks have been used. Inorganic thin film patterns, particularly chromium (Cr) patterns, have come to be employed.

(C1従来技術と問題点 第1図(alば従来のフォトマスクの部分側断面図とそ
の平面図、第1図(blはその静電破壊を生じた状態を
示した図で、1はフォI・マスク、2はガラス板、3は
マスクパターン、4は破壊部をそれぞれ示す。
(C1 Prior art and problems Figure 1 (al) is a partial side sectional view and its plan view of a conventional photomask, Figure 1 (bl is a diagram showing the state where electrostatic damage has occurred, and 1 is a photomask) 2 is a glass plate, 3 is a mask pattern, and 4 is a destroyed portion.

第1図+8)に示すフォトマスク1は、透明なガラス板
2の表面にクロム(Cr)の薄膜を被着し、その不要部
分をエツチングで除去してマスクパターン3を形成して
作られている。このクロム(Cr)でなるマスクパター
ン3は例えば線幅が数μmである画像で構成され、その
厚さは0.1μm程度である。
The photomask 1 shown in Fig. 1+8) is made by depositing a thin film of chromium (Cr) on the surface of a transparent glass plate 2 and removing unnecessary parts by etching to form a mask pattern 3. There is. The mask pattern 3 made of chromium (Cr) is composed of an image with a line width of several μm, for example, and a thickness of about 0.1 μm.

従って、クロム(Cr)は機械的に強固であるとは云え
微細であるが故に、マスクパターン3を損壊せぬよう、
フォトマスク1の取扱には細心の注意を必要としている
Therefore, although chromium (Cr) is mechanically strong, it is fine, so care must be taken to avoid damaging the mask pattern 3.
The photomask 1 must be handled with great care.

このため、運搬等をする際、その間の取扱から保護する
ため、必要に応じて、剥離が容易な軟質合成樹脂例えば
シリチク)II(商品名)等をフォトマスクlの表面に
塗布し、使用する前にこれを剥がすと云うことを行って
いる。
For this reason, in order to protect it from handling during transportation, etc., if necessary, apply a soft synthetic resin that is easy to peel off, such as Silichiku II (trade name), etc. to the surface of the photomask l. I've done something like peeling this off before.

この軟質合成樹脂の塗布は、塗布されている間の保護に
ついては極めて有効であるが、前記使用前のヱリ離に際
して、接着面間に発生する静電気の放電によって、マス
クパターン3が第1図(bl破壊部4の如く静電破壊す
ることが屡発生する問題がある。
The application of this soft synthetic resin is extremely effective in terms of protection while it is being applied, but when it is removed before use, the mask pattern 3 is damaged due to the discharge of static electricity that occurs between the adhesive surfaces, as shown in Figure 1. (There is a problem that electrostatic damage often occurs, such as the BL destruction part 4.

静電気の放電は上記の場合に限られたものではないこと
を考えると、マスクパターン3が静電破壊に対して弱い
欠点を持っていることになる。
Considering that the discharge of static electricity is not limited to the above case, it follows that the mask pattern 3 has the disadvantage of being weak against electrostatic damage.

(di 発明の目的 本発明の目的は上記従来の欠点に鑑み、フォトマスクに
おいて、マスクパターンを静電破壊から保護する構成を
提供するにある。
(di) Purpose of the Invention In view of the above-mentioned conventional drawbacks, it is an object of the present invention to provide a structure for protecting a mask pattern from electrostatic damage in a photomask.

(el 発明の構成 上記目的は、マスクパターンが形成されている面にポリ
ビニールアルコール樹脂(PVA樹脂)階が被着されて
いるフォトマスクとする本発明の構成によって達成され
る。
(el) Structure of the Invention The above object is achieved by the structure of the present invention, which is a photomask in which a polyvinyl alcohol resin (PVA resin) layer is adhered to the surface on which a mask pattern is formed.

この構成でなるフォトマスクでは、従来静電破壊が最も
多かった前述の塗布された軟質合成樹脂の剥離に際して
も、静電破壊は観察されなかった。
In the photomask having this configuration, no electrostatic damage was observed even when the above-mentioned coated soft synthetic resin was peeled off, which conventionally caused the most electrostatic damage.

そして、ポリビニールアルコール樹脂層は透明であるた
め、その層を薄くすることにより、マスク合わせ・露光
の工程においても、該層を被着したままでフォI・マス
クを使用することが出来て、保護機能はフォトマスク使
用終了まで有効である。
Since the polyvinyl alcohol resin layer is transparent, by making the layer thinner, the FoI mask can be used with the layer still attached during the mask alignment and exposure process. The protection function remains valid until the end of use of the photomask.

更に、ポリビニールアルコール樹脂は水に可溶であるた
め、該フォトマスクを再度使用する場合には、先のポリ
ビニールアルコール樹脂層を除去し新たなポリビニール
アルコール樹脂層を被着することが出来て、フォトマス
クの寿命が伸びる利点もある。
Furthermore, since polyvinyl alcohol resin is soluble in water, when using the photomask again, the previous polyvinyl alcohol resin layer can be removed and a new polyvinyl alcohol resin layer can be applied. This also has the advantage of extending the life of the photomask.

(f) 発明の実施例 以下本発明の一実施例を図により説明する。企図を通じ
同一符号は同一対象物を示す。
(f) Embodiment of the Invention An embodiment of the present invention will be described below with reference to the drawings. The same reference numerals refer to the same objects throughout the design.

第2図は本発明の構成によるフォトマスクの一実施例の
部努側印i面図で、1aはフォトマスク、5はf呆護層
をそれぞれ示す。
FIG. 2 is a side view of an embodiment of a photomask according to the present invention, in which 1a indicates a photomask, and 5 indicates a protective layer.

第2図に示す本発明の構成によるフォトマスク1aは、
従来のフォトマスク1のマスクパターン3の形成面に、
ポリビニールアルコール4i(Nu N ヲ被着しζな
る保護層5が形成されてなっている。
The photomask 1a according to the configuration of the present invention shown in FIG.
On the surface of the conventional photomask 1 on which the mask pattern 3 is formed,
A protective layer 5 made of polyvinyl alcohol 4i (NuN) is formed.

このポリビニールアルコール樹脂層なる保護層5の被着
は、クロム(Cr)マスクのパターンを形成する際に行
うレジスト塗布と同様に、例えばスピンコークーヲ使用
してポリビニールアルコール樹脂の溶液を塗布し、乾燥
する作業で行った。フ、Il・マスク1のガラス板2は
、半導体素子の製造に使用されるウェハより大きい四角
形であるが、少なくとも該ウェハと重なる部分の領域で
は、保護層5の厚さは均一でおよそ0.5〜0.8μm
である。
The protective layer 5, which is a polyvinyl alcohol resin layer, is applied by applying a solution of polyvinyl alcohol resin using a spin coating, for example, and then drying, in the same way as resist coating when forming a pattern for a chromium (Cr) mask. I went there to do some work. The glass plate 2 of the mask 1 has a rectangular shape that is larger than a wafer used for manufacturing semiconductor devices, but at least in the area where it overlaps with the wafer, the thickness of the protective layer 5 is uniform and approximately 0.0 mm thick. 5-0.8μm
It is.

上記構成のフォトマスク1aでは、保護N5の表面に傷
を作ってはならないため、その取扱は従来のフォトマス
クlの場合と同様に細心の注意が必要であって、従来の
ように、前述の軟質合成樹脂例えばシリテクト■(商品
名)等の塗布を行う必要があるが、従来静電破壊が最も
多かった該軟質合成樹脂の剥離に際しても、静電破壊は
観察されなかった。
In the photomask 1a having the above structure, since scratches must not be made on the surface of the protective layer N5, it must be handled with the same care as in the case of the conventional photomask l. Although it is necessary to apply a soft synthetic resin such as Silitect ■ (trade name), no electrostatic damage was observed even when the soft synthetic resin, which conventionally caused the most electrostatic damage, was peeled off.

そして、ポリビニールアルコール樹脂は透明であること
と前記の厚さの点から、フォトマスク1aば保護層5を
被着したままで、半導体素子製造におけるマスク合わせ
・露光の工程にも使用することが出来て、保i1機能は
フォトマスク使用終了まで有効である。
Since polyvinyl alcohol resin is transparent and has the above-mentioned thickness, it can also be used for mask alignment and exposure processes in semiconductor device manufacturing with the protective layer 5 still attached to the photomask 1a. The protection i1 function remains valid until the end of use of the photomask.

更に、ポリビニールアルコール樹脂は水に可溶であるた
め、フォトマスク1aを再度使用する場合には、先の保
護層5を水洗で除去し新たな保護層5を被着することが
出来て、従来の静電破壊が発生した場合との比較では勿
論のこと、静電破壊が無かった場合と比較しても、フォ
トマスクとしての寿命が伸びる利点もある。
Furthermore, since polyvinyl alcohol resin is soluble in water, when using the photomask 1a again, the previous protective layer 5 can be removed by washing with water and a new protective layer 5 can be applied. There is also the advantage that the life of the photomask is extended, not only when compared with the conventional case where electrostatic discharge damage occurs, but also when compared with the case where there is no electrostatic discharge damage.

(gl 発明の効果 以上に説明したように、本発明による構成によれば、ソ
Aトマスクのマスクパターンを静電破壊から保護する方
法が提供出来、半導体装置製造の品質「1「保に寄り、
するばかりででく、フォトマスクのノr命延伸を可能に
させるリノ果がある。
(gl) Effects of the Invention As explained above, according to the configuration of the present invention, it is possible to provide a method for protecting the mask pattern of a photomask from electrostatic damage, and to improve the quality of semiconductor device manufacturing by
In addition to this, there is a technology that can extend the life of photomasks.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図(δ)番よ従来のフォトマスクの部分側断面図と
その3i1面図、第1図(blはその静電破壊を生じた
状態を示した図、第2図は本発明の構成によるフォトマ
スクの一実施例の部分側断面図である。 図面においζ、■・1aはフォトマスク、2はガラス板
、3はマスクパターン、4は破壊部、5はI″A′、護
層をそれぞれ示す。 本2唄 (b>
Figure 1 (δ) is a partial side sectional view of a conventional photomask and its 3i 1 side view; 1 is a partial side cross-sectional view of an embodiment of a photomask according to the present invention. In the drawing, ζ, ■, 1a are photomasks, 2 is a glass plate, 3 is a mask pattern, 4 is a destroyed portion, 5 is I″A′, and a protective layer. are shown respectively. Book 2 songs (b>

Claims (1)

【特許請求の範囲】[Claims] マスクパターンが形成されている面にポリビニールアル
コール樹脂層が被着されていることを特徴とするフォト
マスク。
A photomask characterized by having a polyvinyl alcohol resin layer adhered to a surface on which a mask pattern is formed.
JP58113238A 1983-06-23 1983-06-23 Photomask Pending JPS604944A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58113238A JPS604944A (en) 1983-06-23 1983-06-23 Photomask

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58113238A JPS604944A (en) 1983-06-23 1983-06-23 Photomask

Publications (1)

Publication Number Publication Date
JPS604944A true JPS604944A (en) 1985-01-11

Family

ID=14607064

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58113238A Pending JPS604944A (en) 1983-06-23 1983-06-23 Photomask

Country Status (1)

Country Link
JP (1) JPS604944A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006337726A (en) * 2005-06-02 2006-12-14 Topic:Kk Photomask

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5569142A (en) * 1978-11-20 1980-05-24 Fujitsu Ltd Preventing method for peeling of resist
JPS57179850A (en) * 1981-04-30 1982-11-05 Fujitsu Ltd Keeping method for photo mask

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5569142A (en) * 1978-11-20 1980-05-24 Fujitsu Ltd Preventing method for peeling of resist
JPS57179850A (en) * 1981-04-30 1982-11-05 Fujitsu Ltd Keeping method for photo mask

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006337726A (en) * 2005-06-02 2006-12-14 Topic:Kk Photomask

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