JPS6022352Y2 - Mask to prevent overcrowding - Google Patents
Mask to prevent overcrowdingInfo
- Publication number
- JPS6022352Y2 JPS6022352Y2 JP1979015792U JP1579279U JPS6022352Y2 JP S6022352 Y2 JPS6022352 Y2 JP S6022352Y2 JP 1979015792 U JP1979015792 U JP 1979015792U JP 1579279 U JP1579279 U JP 1579279U JP S6022352 Y2 JPS6022352 Y2 JP S6022352Y2
- Authority
- JP
- Japan
- Prior art keywords
- mask
- substrate
- processed
- hole
- exposure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Description
【考案の詳細な説明】
本考案は、露光処理、特に被処理基板のレジスト塗布面
にマスクを密着させて露光を行なう密着露光におけるマ
スクの改良に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an improvement in a mask in exposure processing, particularly in contact exposure in which exposure is performed by bringing the mask into close contact with the resist-coated surface of a substrate to be processed.
この密着露光は半導体集積回路等の極めて高精度で微細
なパターンを作成する場合に使用されている。This contact exposure is used to create extremely precise and fine patterns for semiconductor integrated circuits and the like.
ところが、マスクと被処理基板間に隙間があると露光パ
ターンのぼけを生じ、これは半導体装置の如き微細加工
を要するものにあっては致命的な欠陥を引き起す。However, if there is a gap between the mask and the substrate to be processed, the exposure pattern becomes blurred, which causes a fatal defect in devices that require microfabrication, such as semiconductor devices.
そこで、マスクと被処理基板の密着性をあげるため、機
械的な圧力による他に両者間の間隙を真空吸引して完壁
を期す。Therefore, in order to improve the adhesion between the mask and the substrate to be processed, in addition to applying mechanical pressure, vacuum suction is applied to the gap between the two in order to ensure complete completion.
そのためマスクと被処理基板が過密着をおこし露光後、
両者がうまくはがれず、被処理基板上に塗布されたレジ
ストが剥離し、ピンホールの大きな原因となっている。As a result, the mask and the substrate to be processed come into close contact with each other, and after exposure,
The two cannot be peeled off properly, and the resist coated on the substrate to be processed is peeled off, which is a major cause of pinholes.
このピンホールが部分的に集中して起きたり、数が少な
ければできた製品(半導体製品)の不良率をそれ程低下
させない範囲で、量産体制の現在使用されている。It is currently used in mass production systems as long as the defect rate of products (semiconductor products) is not significantly reduced if these pinholes occur locally or in small numbers.
ところがピンホールは少ない程量産性の向上が図れるこ
とは勿論であ′るが、現状では過密着防止対策がとられ
ているにも係わらず、ピンホールの数が多く問題が残さ
れている。However, although it goes without saying that mass productivity can be improved by reducing the number of pinholes, the problem still remains due to the large number of pinholes, despite measures being taken to prevent over-adhesion.
本考案はかかる欠点を改善したものであり、密着露光用
マスクにおいて、パターン形成領域外に貫通孔および該
貫通孔を密閉する密閉板を設けてなる過密着防止用マス
クを提案したものである。The present invention has improved such drawbacks, and has proposed a mask for preventing over-contact exposure, which includes a through-hole outside the pattern forming area and a sealing plate for sealing the through-hole.
以下、図面に従って本考案を更に詳細に説明する。Hereinafter, the present invention will be described in more detail with reference to the drawings.
第1図は従来例におけるマスクと被処理基板の断面図を
示すものであり、7は被処理基板であるワーキングマス
ク用基板であり、これはガラス板1、クロム等による金
属膜2、レジスト3より戊っている。FIG. 1 shows a cross-sectional view of a mask and a substrate to be processed in a conventional example, and 7 is a substrate for a working mask which is a substrate to be processed. It is more hollow.
8はマスターマスクであり、ガラス板6、パターン5、
エポキシ樹脂等の保護用樹脂4からなっている。8 is a master mask, which includes glass plate 6, pattern 5,
It consists of a protective resin 4 such as epoxy resin.
この保護用樹脂4はパターン5の上からガラス板6にス
ピンナコートにより塗布されたものであり、多数の溝部
13がマスクの外に向ってうす状に形成されている。This protective resin 4 is applied onto the glass plate 6 from above the pattern 5 by spinner coating, and a large number of grooves 13 are formed in a thin shape toward the outside of the mask.
この溝部13により露光後、マスターマスク3とワーキ
ングマスク7を離すとき、空気の導通路となり、両者の
分離をし易くなっている。When the master mask 3 and the working mask 7 are separated after exposure, this groove 13 serves as an air passage, making it easy to separate the two.
ところが、これでも過密着が起こり、この保護用樹脂4
の山部14でレジスト3が保護用樹脂4に付着し、孔1
0が開く。However, even with this, over-adhesion occurs, and this protective resin 4
The resist 3 adheres to the protective resin 4 at the peak 14 of the hole 1.
0 opens.
そしてレジスト3の未露光部9(ハツチで示した部分)
にかかる孔10が開くと、エツチング時、パターンとな
るべき金属膜2にも孔が開く、所謂ピンホールが生じる
。And unexposed area 9 of resist 3 (portion indicated by hatch)
When the holes 10 are opened, holes are also opened in the metal film 2 which is to become a pattern during etching, resulting in so-called pinholes.
そこで本考案は、かかる密着性を防止したものであり、
第2図、第3図に一実施例を示し、第2図はマスターマ
スク3の斜視図、第3図はマスクと被処理基板の断面図
を示す。Therefore, the present invention prevents such adhesion,
An embodiment is shown in FIGS. 2 and 3, with FIG. 2 showing a perspective view of the master mask 3, and FIG. 3 showing a sectional view of the mask and the substrate to be processed.
図中、第1図と同符号のものは同一内容を示し、51は
パターンの形成領域を示し、12はパターン形成領域5
1外に設け、ガラス板6に貫通した貫通孔、11はセロ
テープ等による貫通孔12の密閉板であって、これらは
マスターマスク8に設けられている。In the figure, the same symbols as in FIG. 1 indicate the same contents, 51 indicates a pattern forming area, and 12 indicates a pattern forming area 5.
A through hole 11 is provided outside the master mask 8 and penetrates through the glass plate 6, and 11 is a sealing plate for the through hole 12 with sellotape or the like.These are provided in the master mask 8.
かかるマスターマスク8と被処理基板7とを重ね合せ、
真空吸着によるコンタクト露光を行う。The master mask 8 and the substrate 7 to be processed are superimposed,
Contact exposure is performed using vacuum suction.
露光後は密閉板11をはがすことにより貫通孔12を通
して、空気がマスターマスク8と被処理基板7間に流入
し、両者間の過密着がとかれる。After exposure, by peeling off the sealing plate 11, air flows between the master mask 8 and the substrate 7 to be processed through the through hole 12, and the excessive contact between them is removed.
そこで、マスターマスク8を取除いても、被処理基板7
のレジスト剥離が生じず、ピンホールも発生しない。Therefore, even if the master mask 8 is removed, the target substrate 7
No resist peeling occurs, and no pinholes occur.
実験によると直径1mm程度の貫通孔12を設けるだけ
で、マスクと被処理基板の分離作業も短縮され、かつピ
ンホール数は従来に比べ何拾倍も改善された。Experiments have shown that by simply providing a through hole 12 with a diameter of about 1 mm, the separation work between the mask and the substrate to be processed can be shortened, and the number of pinholes has been improved many times over the conventional method.
また、従来では、保護用樹脂のスピンナコート手段の如
く、むずかしい作業および設備が必要であるが、本考案
を適用すれば、かかるコーティング手段が不要となり、
作業的にも設備的にも大巾に改善される。In addition, conventional methods require difficult work and equipment such as spinner coating of protective resin, but by applying the present invention, such coating means are no longer necessary.
There will be significant improvements both in terms of work and equipment.
第1図は従来例、第2図、第3図は本考案の一実施例を
示し、7は被処理基板、8はマスク、11は密閉板、1
2は貫通孔、51はパターン形成領域を示す。FIG. 1 shows a conventional example, and FIGS. 2 and 3 show an embodiment of the present invention, in which 7 is a substrate to be processed, 8 is a mask, 11 is a sealing plate, 1
Reference numeral 2 indicates a through hole, and reference numeral 51 indicates a pattern forming area.
Claims (1)
孔および該貫通孔を密閉する密閉板を設けてなる過密着
防止用マスク。A mask for preventing over-contact exposure, which includes a through-hole outside a pattern forming area and a sealing plate for sealing the through-hole.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1979015792U JPS6022352Y2 (en) | 1979-02-09 | 1979-02-09 | Mask to prevent overcrowding |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1979015792U JPS6022352Y2 (en) | 1979-02-09 | 1979-02-09 | Mask to prevent overcrowding |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS55116345U JPS55116345U (en) | 1980-08-16 |
JPS6022352Y2 true JPS6022352Y2 (en) | 1985-07-03 |
Family
ID=28838126
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1979015792U Expired JPS6022352Y2 (en) | 1979-02-09 | 1979-02-09 | Mask to prevent overcrowding |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6022352Y2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8897056B2 (en) | 1998-11-16 | 2014-11-25 | Sandisk 3D Llc | Pillar-shaped nonvolatile memory and method of fabrication |
-
1979
- 1979-02-09 JP JP1979015792U patent/JPS6022352Y2/en not_active Expired
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8897056B2 (en) | 1998-11-16 | 2014-11-25 | Sandisk 3D Llc | Pillar-shaped nonvolatile memory and method of fabrication |
US9214243B2 (en) | 1998-11-16 | 2015-12-15 | Sandisk 3D Llc | Three-dimensional nonvolatile memory and method of fabrication |
Also Published As
Publication number | Publication date |
---|---|
JPS55116345U (en) | 1980-08-16 |
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