JPS6114639A - Photomask - Google Patents
PhotomaskInfo
- Publication number
- JPS6114639A JPS6114639A JP59135558A JP13555884A JPS6114639A JP S6114639 A JPS6114639 A JP S6114639A JP 59135558 A JP59135558 A JP 59135558A JP 13555884 A JP13555884 A JP 13555884A JP S6114639 A JPS6114639 A JP S6114639A
- Authority
- JP
- Japan
- Prior art keywords
- film
- quartz glass
- pattern
- tin oxide
- photomask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F1/48—Protective coatings
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
Description
【発明の詳細な説明】
ｆＡ粟にの利用分野１
本発明は、例えば甲導体装；〃の１ｋｊ造方法におい゛
（、）Ａトリソグラフィを実施゛４−る際に使用される
フォトマスクに関する。DETAILED DESCRIPTION OF THE INVENTION FIELD OF APPLICATION 1 The present invention relates to a photomask used when carrying out A lithography, for example, in a 1KJ fabrication method for conductor packaging. .
一般に、フォトマスクは透明基板面の半導体基板と密着
させる側の表面に、転写さ・υ°るためのクロム等から
なる所定パターン（不透明ＩＷ）を被若さ・口た構造で
ある。且つ、このような透明基板には、従前、ガラス板
が使用されていた。In general, a photomask has a structure in which a predetermined pattern (opaque IW) made of chromium or the like is formed on the surface of a transparent substrate that is in close contact with a semiconductor substrate to be transferred and diluted. Moreover, a glass plate has been used for such a transparent substrate.
しかしながら、半導体装置の急速な進歩に伴って、素子
が微細化され、上記フォトリソグラフィ技術に用いられ
る光源も、波長が短かく解像度の良１ｒ’ 遠紫夕ｌ
ｉＱ （Ｉｌｌ！ｌ！＋１１１ Ｖ ）あｉ：＋ イｋ
１． ’＋ｂ Ｉ′ｉ’ｉ！が用いられる１１、うにな
・−）”（きた。そ）４−己と、ｊ１″１土のｌ；’ｉ
ｔ：点の低い一メ！う用のガラスＪ、ｊ； ｊ％ＣＩＩ
熱膨１１１ニ１；が大きく、短波長に幻する透過性も余
り良くない。そのため、それに代わる基板として、熱膨
張率が小さく （シリコンとほぼ同程度）、短波長の透
過（’ｌの良い石英ガラス基板（純粋な酸化シリ：１ン
）が使用されるようになっている。However, with the rapid progress of semiconductor devices, elements have become finer, and the light sources used in the photolithography technology have shorter wavelengths and better resolution.
iQ (Ill!l!+111 V) Ai:+Ik
1. '+b I'i'i! is used.
T: A low score! Glass for use J, j; j%CII
The thermal expansion is large, and the transparency at short wavelengths is not very good. Therefore, as an alternative substrate, a quartz glass substrate (pure silicon oxide), which has a low coefficient of thermal expansion (almost on the same level as silicon) and good transmission of short wavelengths, is being used. .
しかし、透明な石英ガラスは非富に高価であるから、そ
の使用には十分な配慮がなされなければならない。However, since transparent quartz glass is extremely expensive, great care must be taken in its use.
［従来の技術］
第２図は、このような石英ガラス基板を用いた従来のフ
ォトマスクの断面構造を示しており、１は石英ガラス、
２は酸化錫（ＳｎＯ２）股、３はクロム（Ｃｒ） ＩＩ
Ｌ ４はポリビニールアルコール（＋）ＶＡ）膜であ
る。[Prior Art] Fig. 2 shows the cross-sectional structure of a conventional photomask using such a quartz glass substrate.
2 is tin oxide (SnO2), 3 is chromium (Cr) II
L4 is a polyvinyl alcohol (+) VA) membrane.
厚さは石英ガラス１が２〜２．５ｍｍ、酸化錫膜２が３
００人程度、クロム膜３が７００人、ＰＶＡ膜４が２０
００人前後で、所要パターンはクロム膜３で形成され′
（おり、ＰＶＡ膜４は密着時にパターンに）１するスリ
ｆ島を防くための透明な保護膜である。The thickness of the quartz glass 1 is 2 to 2.5 mm, and the thickness of the tin oxide film 2 is 3 mm.
Approximately 00 people, 700 people for chrome film 3, 20 people for PVA film 4
The required pattern was formed using chrome film 3.
(The PVA film 4 is a transparent protective film for preventing pickpocket islands from forming in a pattern when the film is in close contact with the film).
更に、酸化錫膜２を石英ガラス１に被覆しているが、こ
れは使用時に、絶縁性の高い石英ガラス】が静電気を帯
びてチャージアップし易いため、これを防１１する［１
的である。酸化錫膜は導電性があつζ、薄膜は透明であ
るから、その目的に適してい【）。若し、酸化錫膜がな
い場合、石英ガラス基鈑がチャージアップしζ、マスク
表面にゴミが吸い寄・Ｕられて、そのゴミが写し出され
たり、又、チャージが放電してパターンが破壊されたり
する問題が起こる。Furthermore, the quartz glass 1 is coated with a tin oxide film 2, which prevents this from occurring because silica glass, which has high insulating properties, is easily charged with static electricity during use.
It is true. The tin oxide film is highly conductive and the thin film is transparent, so it is suitable for this purpose [). If there is no tin oxide film, the quartz glass substrate will be charged up, dust will be attracted to the mask surface, and the dust will be exposed, or the charge will discharge and the pattern will be destroyed. Problems may arise.
［発明が解決しようとする問題点］
この上・）に、フォトマスクには酸化錫膜を被覆して、
チャージアップを防＋Ｌ Ｌ、ているが、他方、このよ
うなフォトマスクに設けたパターンが不要になった場合
、高価な石英ガラス基板１から既設パターンを除去して
、その基板１の再刊用ガが行なわれる。透明な石英ガラ
ス基板は５インチφのもので、１万円稈度と高価なもの
であるから、再利用してコストダウンを図っているわけ
である。[Problems to be solved by the invention] In addition, the photomask is coated with a tin oxide film,
This prevents charge-up, but on the other hand, when the pattern provided on such a photomask is no longer needed, the existing pattern can be removed from the expensive quartz glass substrate 1 and the substrate 1 can be used for reprinting. will be carried out. The transparent quartz glass substrate has a diameter of 5 inches and is expensive at 10,000 yen, so it is being reused to reduce costs.
しかし、５ｎ０２は化学薬品と反応し難い物質で、通常
のエツチングによって除去することは難しい。However, 5n02 is a substance that does not easily react with chemicals and is difficult to remove by ordinary etching.
そのために、無理に酸化錫を物理的に剥がすと、高価な
石英ガラス基鈑が傷つけられて再利用ができなくなる。Therefore, if the tin oxide is forcibly removed physically, the expensive quartz glass substrate will be damaged and cannot be reused.
これは結果として、半導体装置のコストアップに深く関
わる。本発明は、この問題点を解消させて、簡単に酸化
慴が除去され、容易に石英ガラス基板が再利用できるフ
ォトマスクの構造をＩＩ ｉｎ するものである。As a result, this is deeply related to an increase in the cost of semiconductor devices. The present invention solves this problem and provides a photomask structure in which oxidation is easily removed and the quartz glass substrate can be easily reused.
［問題点を解決するための１段１
その問題は、マスクパターンが設けられた透明基板上に
、ポリビニールアルコール股を介して、酸化錫膜が被ｌ
されているフォトマスクによって達成される。[Step 1 to solve the problem] The problem is that a tin oxide film is coated on a transparent substrate with a mask pattern through a polyvinyl alcohol layer.
This is achieved by using a photomask.
［作用１
即ち、酸化錫膜を石英ガラス基板に直かに被着上ずに、
パターンを保護している透明なＩ） Ｖへ映の−１−に
？！ｌｒｉするマスク構ｊ告にする。[Action 1: In other words, without directly depositing the tin oxide film on the quartz glass substrate,
Transparent I) protecting the pattern -1- to V? ! Make sure to wear a mask to protect yourself.
［実施例］ 以下１図面を参照して実施例によって詳細に説明する。[Example] An embodiment will be described in detail below with reference to one drawing.
第１図は、石英ガラス基板を用いた、本発明にかかるフ
ォトマスクの断面構造を示しており、第２図と同一部材
に同一記号が付しである。図のように、石英ガラス基板
１に直接、クロム膜３の所定パターンを作成し“Ｃ１そ
の上にＰＶＡ膜４を被覆する。そして、その上に酸化錫
膜をスパッタ法で被着した構造にする。FIG. 1 shows a cross-sectional structure of a photomask according to the present invention using a quartz glass substrate, and the same members as in FIG. 2 are given the same symbols. As shown in the figure, a predetermined pattern of a chromium film 3 is created directly on a quartz glass substrate 1, and a PVA film 4 is coated thereon.A tin oxide film is then deposited on top of it by sputtering. do.
このようにＰＶＡ膜のにに酸化錫膜を被覆すると、−１
分に石英ガラスのチャージアップを防止し、マスクパタ
ーンを保護する効果が得られる。また、パターンが不ツ
！になった場合、ｐｖＡＩＩ！ｉ（フィルム）は水溶性
であるから、水洗すれば除去され、その時、同時に酸化
錫が剥離される。従って、石英ガラス基鈑を繰り返し再
利用することが容易になる。When a tin oxide film is coated on a PVA film in this way, -1
This effectively prevents charge-up of the quartz glass and protects the mask pattern. Also, the pattern is wrong! If it becomes pvAII! Since i (film) is water-soluble, it can be removed by washing with water, and at the same time, the tin oxide is peeled off. Therefore, it becomes easy to repeatedly reuse the quartz glass substrate.
［発明の効果］
以！二の説明から明らかなように、本発明によれば高価
な石英ガラス基板が再利用できて、フォトマスクの低価
格化に役立ち、率いてはｌく導体装置のコストダウンに
寄与するものである。[Effect of the invention] Here it is! As is clear from the second explanation, according to the present invention, an expensive quartz glass substrate can be reused, which contributes to lowering the cost of photomasks, which in turn contributes to lowering the cost of conductor devices. .
尚、上記例は石英ガラス基板で説明したが、従来の一般
用ガラス基板にも通用できることは云うまでもない。Although the above example has been explained using a quartz glass substrate, it goes without saying that the present invention can also be applied to conventional general glass substrates.
第１図は本発明にがかるフォトマスクの断面構造を示す
図、
第２図は従来のフォ］・マスクの断面構造を示す図であ
る。
図において、
１は石英ガラス基板、 ２は酸化錫膜、３はクロム膜
（マスクパターン）、
４はＰＶＡ膜
を示している。FIG. 1 is a diagram showing a cross-sectional structure of a photomask according to the present invention, and FIG. 2 is a diagram showing a cross-sectional structure of a conventional photomask. In the figure, 1 is a quartz glass substrate, 2 is a tin oxide film, 3 is a chromium film (mask pattern), and 4 is a PVA film.
Claims (1)
ールアルコール膜を介して、酸化錫膜が被覆されている
ことを特徴とするフォトマスク。A photomask characterized in that a transparent substrate provided with a mask pattern is coated with a tin oxide film via a polyvinyl alcohol film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59135558A JPS6114639A (en) | 1984-06-29 | 1984-06-29 | Photomask |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59135558A JPS6114639A (en) | 1984-06-29 | 1984-06-29 | Photomask |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6114639A true JPS6114639A (en) | 1986-01-22 |
Family
ID=15154613
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59135558A Pending JPS6114639A (en) | 1984-06-29 | 1984-06-29 | Photomask |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6114639A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2001050506A1 (en) * | 2000-01-06 | 2001-07-12 | Yoon Yea Sun | Mask recycle process |
-
1984
- 1984-06-29 JP JP59135558A patent/JPS6114639A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2001050506A1 (en) * | 2000-01-06 | 2001-07-12 | Yoon Yea Sun | Mask recycle process |
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