JPS6319886A - Magnetro resistance element - Google Patents
Magnetro resistance elementInfo
- Publication number
- JPS6319886A JPS6319886A JP61164314A JP16431486A JPS6319886A JP S6319886 A JPS6319886 A JP S6319886A JP 61164314 A JP61164314 A JP 61164314A JP 16431486 A JP16431486 A JP 16431486A JP S6319886 A JPS6319886 A JP S6319886A
- Authority
- JP
- Japan
- Prior art keywords
- film
- thin film
- insulating film
- insulating
- magnetically sensitive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010408 film Substances 0.000 claims abstract description 68
- 239000010409 thin film Substances 0.000 claims abstract description 31
- 238000004544 sputter deposition Methods 0.000 claims abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 11
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 11
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 10
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 10
- 208000037998 chronic venous disease Diseases 0.000 claims description 4
- 230000007547 defect Effects 0.000 abstract description 6
- 238000005268 plasma chemical vapour deposition Methods 0.000 abstract description 6
- 229910017709 Ni Co Inorganic materials 0.000 abstract description 3
- 229910003267 Ni-Co Inorganic materials 0.000 abstract description 3
- 229910003271 Ni-Fe Inorganic materials 0.000 abstract description 3
- 229910003262 Ni‐Co Inorganic materials 0.000 abstract description 3
- 238000000034 method Methods 0.000 abstract description 3
- 230000003647 oxidation Effects 0.000 abstract description 3
- 238000007254 oxidation reaction Methods 0.000 abstract description 3
- 150000004767 nitrides Chemical class 0.000 abstract 2
- 238000005229 chemical vapour deposition Methods 0.000 abstract 1
- 230000001681 protective effect Effects 0.000 description 6
- 239000011368 organic material Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000007738 vacuum evaporation Methods 0.000 description 2
- 229910018499 Ni—F Inorganic materials 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005294 ferromagnetic effect Effects 0.000 description 1
- 239000002223 garnet Substances 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000001568 sexual effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
Landscapes
- Hall/Mr Elements (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、感磁性薄膜を用いた磁気抵抗素子の保護膜に
関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a protective film for a magnetoresistive element using a magnetically sensitive thin film.
一般に感磁性薄膜を用いた磁気抵抗素子は、その断面図
を第４図に示すように、絶縁基板１上に真空蒸着、スパ
ッタリング等によりＮ ｉ −Ｆ ｅ、Ｎｉ−Ｃｏ等の
薄膜を形成し、その薄膜を所望のパターンにエツチング
して感磁性薄膜２を形成している。ここで、Ｎｉ−Ｆｅ
、Ｎｉ−Ｃｏ等の薄膜は非常に活性であるために酸化さ
れ易く、又、傷が付き易いものである。従って、感磁性
薄膜２の保護膜が必要であるが、従来ではその保護膜と
して例えばＰＩＱ等の有機材料３を用いている。Generally, a magnetoresistive element using a magnetically sensitive thin film is produced by forming a thin film of Ni-Fe, Ni-Co, etc. on an insulating substrate 1 by vacuum evaporation, sputtering, etc., as shown in the cross-sectional view of FIG. The magnetically sensitive thin film 2 is formed by etching the thin film into a desired pattern. Here, Ni-Fe
, Ni--Co, etc. are very active and therefore easily oxidized and easily scratched. Therefore, a protective film for the magnetically sensitive thin film 2 is required, and conventionally, an organic material 3 such as PIQ is used as the protective film.
しかしながら、保護膜として有機材料を用いた場合、有
機材料は表面が柔らかいために感磁性薄膜２表面に傷が
付き易く、又、これを硬化させる際に高温ヘーキング処
理を必要とするために惑Ｅｉｔ性コ膜が酸化してしまう
という問題がある。However, when an organic material is used as a protective film, the surface of the magnetically sensitive thin film 2 is easily scratched because the organic material has a soft surface, and it is difficult to use because it requires high-temperature haking treatment when hardening the organic material. There is a problem that the sexual membrane becomes oxidized.
そこで本発明は、保護膜を改良する事により感磁性薄膜
の酸化、損傷を防止し、信頼性の高い磁気抵抗素子を提
供する事を目的としている。Therefore, an object of the present invention is to prevent oxidation and damage to the magnetically sensitive thin film by improving the protective film, and to provide a highly reliable magnetoresistive element.
上記の目的を達成する為に本発明の磁気抵抗素子は基板
と、該基板上に形成された感磁性薄膜と、少なくとも該
恣磁性薄膜上にスパッタリング処理により形成された第
１の絶縁膜と、該第１の絶縁膜上にＣＶＤ処理により形
成された第２の絶縁膜とを備える事を特徴としている。In order to achieve the above object, the magnetoresistive element of the present invention includes a substrate, a magnetically sensitive thin film formed on the substrate, a first insulating film formed at least on the magnetically sensitive thin film by sputtering treatment, It is characterized by comprising a second insulating film formed by CVD treatment on the first insulating film.
そして、上記の手段によると、スパッタリング処理によ
って第１の絶縁膜を形成するので感磁性薄膜の酸化を防
止できる。ここで、スパッタリング処理によって形成す
ると無欠陥の絶縁膜を得る事は困難であるが、たとえ第
１の絶縁膜に欠陥である微小のピンホールが残存したと
しても、ＣＶＤ処理により形成される欠陥の少ない第２
の絶縁膜をその上に形成する事によって、そのピンホー
ルを埋める事ができる。又、第２の絶縁膜は比較的硬質
であるので感磁性薄膜の損傷を防止できる。According to the above means, since the first insulating film is formed by sputtering treatment, oxidation of the magnetically sensitive thin film can be prevented. Here, it is difficult to obtain a defect-free insulating film when formed by sputtering, but even if tiny pinholes, which are defects, remain in the first insulating film, the defects formed by CVD may be removed. less second
The pinhole can be filled by forming an insulating film on top of it. Furthermore, since the second insulating film is relatively hard, damage to the magnetically sensitive thin film can be prevented.
以下、本発明を図面に示す実施例を用いて説明する。第
１図は本発明の一実施例の断面図である。Hereinafter, the present invention will be explained using embodiments shown in the drawings. FIG. 1 is a sectional view of an embodiment of the present invention.
図において、１は絶′４＆基板であり、その上に真空蒸
着、スパッタリング等によりＮｔ Ｆ ｅ ％ Ｎ
１−Ｃｏ等よりなる感磁性薄膜２を従来技術と同様にし
て形成する。そして、感磁性薄膜２及び絶縁基板１の表
面上にスパッタリング処理により形成され、その膜厚が
０．３μｍ以上のシリコン酸化膜４を形成する。引続き
そのシリコン酸化膜４上にプラズマＣＶＤ処理により形
成され、その膜厚が０．５〜２．５μｍのシリコン窒化
膜５を形成する。In the figure, reference numeral 1 denotes a substrate, on which NtFe%N is deposited by vacuum evaporation, sputtering, etc.
A magnetically sensitive thin film 2 made of 1-Co or the like is formed in the same manner as in the prior art. Then, a silicon oxide film 4 having a thickness of 0.3 μm or more is formed on the surfaces of the magnetically sensitive thin film 2 and the insulating substrate 1 by sputtering. Subsequently, a silicon nitride film 5 having a thickness of 0.5 to 2.5 μm is formed on the silicon oxide film 4 by plasma CVD processing.
そこで上記構成によると、感Ｉｉ性薄膜２を直接保護す
る膜としてスパッタリング処理により形成されたシリコ
ン酸化膜４を使用している事から、その膜は真空中にて
形成されるので、感磁性薄膜２が酸化する事がなくなる
。又、シリコン酸化膜４に欠陥である微小のピンホール
が残存したとしても、その上に形成されるシリコン窒化
膜５はプラズマＣＶＤ処理により形成された膜であり、
その膜は欠陥が少なく、そのピンホールを埋める事がで
きる。又、プラズマＣＶＤ処理によって形成された膜は
比較的硬質であり、！ｌｉ性薄膜２の損傷を防止できる
。Therefore, according to the above structure, since the silicon oxide film 4 formed by sputtering is used as a film to directly protect the Ii-sensitive thin film 2, the film is formed in a vacuum, so the magnetically sensitive thin film 2 is 2 will not be oxidized. Further, even if a minute pinhole, which is a defect, remains in the silicon oxide film 4, the silicon nitride film 5 formed thereon is a film formed by plasma CVD processing,
The film has fewer defects and can fill in the pinholes. Also, the film formed by plasma CVD treatment is relatively hard! Damage to the Li thin film 2 can be prevented.
ここで、第２図に示す膜厚とクラック発生率との関係図
かられかるように、シリコン酸化膜４上にシリコン窒化
膜５を形成した場合、シリコン酸化膜４の膜厚が０．３
μｍより小さくなるとクランクが生じる可能性があるが
、本例においてはその膜厚が０．３μｍ以上であるので
クラックが生じる事がなくなる。Here, as can be seen from the relationship diagram between film thickness and crack occurrence rate shown in FIG. 2, when silicon nitride film 5 is formed on silicon oxide film 4, the film thickness of silicon oxide film 4 is 0.3
If the thickness is less than .mu.m, cracks may occur, but in this example, since the film thickness is 0.3 .mu.m or more, cracks will not occur.
又、シリコン窒化膜５の膜厚においては、第３図に示す
膜厚とピンホール数との関係図かられかるように、シリ
コン窒化膜５の膜厚が０．５μｍより小さいとシリコン
酸化膜４に残存するピンホールを充分に埋める事ができ
ない。又、その膜厚が２．５μｍより大きいとシリコン
窒化膜５の表面にクラックが生じて保護膜として使用で
きなくなるが、本例においてはその膜厚が０．５〜２．
５μｍの範囲内であるのでそのような不具合を解消でき
る。Regarding the thickness of the silicon nitride film 5, as can be seen from the relationship diagram between the film thickness and the number of pinholes shown in FIG. The remaining pinholes in 4 cannot be filled sufficiently. If the film thickness is greater than 2.5 μm, cracks will occur on the surface of the silicon nitride film 5, making it unusable as a protective film, but in this example, the film thickness is 0.5 to 2.5 μm.
Since it is within the range of 5 μm, such problems can be eliminated.
尚、本発明は上記実施例に限定される事なく、その主旨
から逸脱しない限り、例えば以下に示す如（種々変形可
能である。It should be noted that the present invention is not limited to the above embodiments, and can be modified in various ways, for example as shown below, without departing from the spirit thereof.
ｆ１１本発明のいう第１の絶縁膜としては、スパッタリ
ング処理により形成されておればよく、シリコン酸化膜
４に限定される事なく、例えばシリコン窒化膜等であっ
てもよい。同様に第２の絶縁膜としては、ＣＶＤ処理に
より形成されておればよく、プラズマＣＶＤ処理により
形成されるシリコン窒化膜５に限定される事なく、例え
ばシリコン酸化膜等であってもよい。f11 The first insulating film referred to in the present invention may be formed by a sputtering process, and is not limited to the silicon oxide film 4, and may be, for example, a silicon nitride film. Similarly, the second insulating film may be formed by CVD processing, and is not limited to the silicon nitride film 5 formed by plasma CVD processing, and may be, for example, a silicon oxide film.
（２）感磁性薄膜としては上記実施例に示すＮｉ −Ｆ
ｅｘ Ｎｉ−Ｃｏ等の強磁性薄膜に限定される事なく、
ＩｎＳｂ、ＭｎＢ１．、Ｇｄ−Ｆｅ、ＹＩＧ等のガーネ
ット等の多結晶薄膜、あるいは、Ｇｄ−Ｃｏ、Ｔｂ−Ｆ
ｅ、Ｃｏ−Ｃｒ等のアモルファスの薄膜等であっても上
記実施例と同様の効果が得られる。(2) The magnetically sensitive thin film is Ni-F shown in the above example.
Not limited to ferromagnetic thin films such as ex Ni-Co,
InSb, MnB1. , Gd-Fe, YIG, etc., polycrystalline thin films such as garnet, or Gd-Co, Tb-F
Even with an amorphous thin film such as e, Co--Cr, etc., the same effects as in the above embodiments can be obtained.
以上述べたように、本発明によれば惑（ｆｌ性薄膜をス
パッタリング処理により形成された第１の絶縁膜及びＣ
ＶＤ処理により形成された第２の絶縁膜によって保護し
ているので、感磁性薄膜の酸化、損傷を防止し、信頼性
の高い磁気抵抗素子を提供できるという効果がある。As described above, according to the present invention, the first insulating film and the C
Since it is protected by the second insulating film formed by the VD process, the magnetically sensitive thin film is prevented from being oxidized and damaged, and a highly reliable magnetoresistive element can be provided.
第１図は本発明の一実施例の磁気抵抗素子の断面図、第
２図はシリコン酸化膜の膜厚とクラック発生率との関係
図、第３図はシリコン窒化膜の膜厚とピンホール数との
関係図、第４図は従来の磁気抵抗素子の断面図である。
１・・・絶縁基板、２・・・感磁性薄膜、４・・・シリ
コン酸化膜、５・・・シリコン窒化膜。
代理人弁理士 岡 部 隆
第１図
スへ”・・ｌクリン７°゛処理１＝Ｆ３＞＋〕＞管殻イ
ｃＲ１ＬｃＪｔＷしく、ａｍ）第２図
ジｑ コ ＪイｃＦｌｉｒ ＡＨ（／ｌＡｍ ）第３図
第４図Fig. 1 is a cross-sectional view of a magnetoresistive element according to an embodiment of the present invention, Fig. 2 is a relationship between the thickness of a silicon oxide film and the rate of crack occurrence, and Fig. 3 is a diagram showing the relationship between the thickness of a silicon nitride film and pinholes. FIG. 4 is a cross-sectional view of a conventional magnetoresistive element. DESCRIPTION OF SYMBOLS 1... Insulating substrate, 2... Magnetically sensitive thin film, 4... Silicon oxide film, 5... Silicon nitride film. Representative Patent Attorney Takashi Okabe Go to Fig. 1"...lClin7°゛Processing 1=F3>+〕>Tube shell IcR1LcJtW, am) Fig. 2 Jikko JicFlir AH (/lAm) Figure 3 Figure 4
Claims (3)
なくとも該感磁性薄膜上にスパッタリング処理により形
成された第１の絶縁膜と、該第１の絶縁膜上にＣＶＤ処
理により形成された第２の絶縁膜とを備える事を特徴と
する磁気抵抗素子。(1) A substrate, a magnetically sensitive thin film formed on the substrate, a first insulating film formed at least on the magnetically sensitive thin film by sputtering treatment, and a first insulating film formed on the first insulating film by CVD treatment. A magnetoresistive element comprising a second insulating film.
、上記第２の絶縁膜の膜厚が０．５〜２．５μｍである
特許請求の範囲第１項記載の磁気抵抗素子。(2) The magnetoresistance according to claim 1, wherein the first insulating film has a thickness of 0.3 μm or more, and the second insulating film has a thickness of 0.5 to 2.5 μm. element.
第２の絶縁膜がシリコン窒化膜である特許請求の範囲第
１項又は第２項のいずれかに記載の磁気抵抗素子。(3) The magnetoresistive element according to claim 1 or 2, wherein the first insulating film is a silicon oxide film, and the second insulating film is a silicon nitride film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61164314A JPS6319886A (en) | 1986-07-11 | 1986-07-11 | Magnetro resistance element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61164314A JPS6319886A (en) | 1986-07-11 | 1986-07-11 | Magnetro resistance element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6319886A true JPS6319886A (en) | 1988-01-27 |
Family
ID=15790792
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61164314A Pending JPS6319886A (en) | 1986-07-11 | 1986-07-11 | Magnetro resistance element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6319886A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63310186A (en) * | 1987-06-12 | 1988-12-19 | Asahi Chem Ind Co Ltd | Manufacture of ferromagnetic magneto resistance element |
| JP2012064903A (en) * | 2010-09-17 | 2012-03-29 | Toshiba Corp | Magnetoresistance effect element, magnetic memory and method of manufacturing magnetoresistance effect element |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60257582A (en) * | 1984-06-04 | 1985-12-19 | Nippon Denso Co Ltd | Magnetoresistive device |
-
1986
- 1986-07-11 JP JP61164314A patent/JPS6319886A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60257582A (en) * | 1984-06-04 | 1985-12-19 | Nippon Denso Co Ltd | Magnetoresistive device |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63310186A (en) * | 1987-06-12 | 1988-12-19 | Asahi Chem Ind Co Ltd | Manufacture of ferromagnetic magneto resistance element |
| JP2012064903A (en) * | 2010-09-17 | 2012-03-29 | Toshiba Corp | Magnetoresistance effect element, magnetic memory and method of manufacturing magnetoresistance effect element |
| US8502331B2 (en) | 2010-09-17 | 2013-08-06 | Kabushiki Kaisha Toshiba | Magnetoresistive effect element, magnetic memory |
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