JPH02125679A - Magnetoresistance element - Google Patents
Magnetoresistance elementInfo
- Publication number
- JPH02125679A JPH02125679A JP63279719A JP27971988A JPH02125679A JP H02125679 A JPH02125679 A JP H02125679A JP 63279719 A JP63279719 A JP 63279719A JP 27971988 A JP27971988 A JP 27971988A JP H02125679 A JPH02125679 A JP H02125679A
- Authority
- JP
- Japan
- Prior art keywords
- film
- moisture
- resistant
- protecting film
- resistant protecting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010408 film Substances 0.000 claims abstract description 38
- 230000005294 ferromagnetic effect Effects 0.000 claims abstract description 17
- 239000010409 thin film Substances 0.000 claims abstract description 13
- 239000004020 conductor Substances 0.000 claims abstract description 11
- 238000000151 deposition Methods 0.000 claims abstract description 4
- 239000000758 substrate Substances 0.000 claims description 5
- 238000000605 extraction Methods 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 16
- 229910052681 coesite Inorganic materials 0.000 abstract description 8
- 229910052906 cristobalite Inorganic materials 0.000 abstract description 8
- 239000000377 silicon dioxide Substances 0.000 abstract description 8
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 8
- 229910052682 stishovite Inorganic materials 0.000 abstract description 8
- 229910052905 tridymite Inorganic materials 0.000 abstract description 8
- 229910052581 Si3N4 Inorganic materials 0.000 abstract description 3
- 230000005291 magnetic effect Effects 0.000 abstract description 3
- 230000001681 protective effect Effects 0.000 description 14
- 230000004888 barrier function Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 238000005299 abrasion Methods 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003302 ferromagnetic material Substances 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000005415 magnetization Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000005405 multipole Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は強磁性薄膜がら成る磁気抵抗素子に係り、特に
その耐湿保護膜と耐摩耗性保護膜とをもつ磁気抵抗素子
に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a magnetoresistive element comprising a ferromagnetic thin film, and more particularly to a magnetoresistive element having a moisture-resistant protective film and an abrasion-resistant protective film.
従来、この種の磁気抵抗素子は、第２図に示すように、
ＳｉＯ２等の絶縁膜を有するシリコンあるいはガラス基
板１の上に、Ｆｅ、Ｎｉ、Ｃｏ等の強磁性薄膜およびＣ
ｒ、Ａｕ、ＡＮ等の電極を蒸着あるいはスパッタにより
成膜し、しかる後フォトエツチングにより強磁性抵抗体
２と引出し電極導体３とを形成し、そしてこの強磁性抵
抗体と電極導体を覆うように吸湿を防ぐための耐湿保護
１１ｉ ６を形成して構成されている。Conventionally, this type of magnetoresistive element, as shown in FIG.
On a silicon or glass substrate 1 having an insulating film such as SiO2, a ferromagnetic thin film such as Fe, Ni, Co, etc.
An electrode of R, Au, AN, etc. is formed by vapor deposition or sputtering, and then a ferromagnetic resistor 2 and an extraction electrode conductor 3 are formed by photoetching, and then the ferromagnetic resistor 2 and the lead electrode conductor 3 are formed so as to cover the ferromagnetic resistor and the electrode conductor. It is constructed by forming a moisture-resistant protection 11i6 to prevent moisture absorption.
しかしながら、この磁気抵抗素子は着磁媒体と組み合せ
てロータリーエンコーダや磁気スケールに応用される。However, this magnetoresistive element is applied to rotary encoders and magnetic scales in combination with a magnetized medium.
この着磁媒体として、−ｍに多極着磁した磁石が使用さ
れるが、着磁密度が大きくなるに従い、漏洩磁束も少な
くなる。このため前述の磁石の着磁面と磁気抵抗素子を
面対面させて配置した磁石と磁気抵抗素子との間のギャ
ップは微小となり、取付は調整の際磁気抵抗素子の表面
の耐湿保護膜６にキズを生じ、パッシベーション膜を破
損し、性能劣化を生ずるという欠点を有していた。As this magnetized medium, a magnet magnetized with -m multipoles is used, and as the magnetization density increases, the leakage magnetic flux also decreases. For this reason, the gap between the magnet and the magnetoresistive element, which are arranged so that the magnetized surface of the magnet and the magnetoresistive element are face-to-face, becomes minute, and the moisture-resistant protective film 6 on the surface of the magnetoresistive element is attached during adjustment. This has the disadvantage of causing scratches, damaging the passivation film, and deteriorating performance.
本発明の目的は、このような欠点を除き、表面保護膜を
強化して耐湿保護膜に傷がつき難くした磁気抵抗素子を
提供することにある。SUMMARY OF THE INVENTION An object of the present invention is to provide a magnetoresistive element that eliminates such drawbacks and has a strengthened surface protective film to make the moisture-resistant protective film less likely to be scratched.
本発明の磁気抵抗素子の構成は、基板上に強磁性薄膜抵
抗体および引出し電極導体が所定の形状で形成され、前
記強磁性薄膜抵抗体の露出面を含む表面にＳｉＯ２ある
いはＳｉ３Ｎ４からなる耐湿膜が形成され、この耐湿股
上にＳｉＣの耐摩耗層の膜が被着され形成されたことを
特徴とする。The structure of the magnetoresistive element of the present invention is such that a ferromagnetic thin film resistor and an extraction electrode conductor are formed in a predetermined shape on a substrate, and a moisture-resistant film made of SiO2 or Si3N4 is coated on the surface including the exposed surface of the ferromagnetic thin film resistor. is formed, and a wear-resistant layer of SiC is formed on this moisture-resistant crotch.
次に本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.
第１図（ａ）、（ｂ）は本発明の磁気抵抗素子の一実施
例を示す平面図、およびＡ−Ａの要部断面図である。図
中、１は基板、２は強磁性薄膜抵抗体、３は引出し電極
導体、４はＳｉＯ２耐湿保護膜、５はＳｉＣ耐摩耗保護
層の膜を示す。FIGS. 1(a) and 1(b) are a plan view showing an embodiment of the magnetoresistive element of the present invention, and a sectional view of a main part taken along line A-A. In the figure, 1 is a substrate, 2 is a ferromagnetic thin film resistor, 3 is an extraction electrode conductor, 4 is a SiO2 moisture-resistant protective film, and 5 is a SiC wear-resistant protective layer.
本実施例の製造方法は、強磁性薄膜抵抗体２及び引出し
電極導体３を所定の形態で形成した後、強磁性体の露出
面を含む表面にＳｉＯ２あるいはＳｉ３Ｎ４からなる耐
湿保護膜４を形成し次にこの耐湿保護１１１４の一ヒに
ＳｉＣの耐摩耗保護層の膜５を被着して磁気抵抗素子が
形成される。In the manufacturing method of this embodiment, after forming the ferromagnetic thin film resistor 2 and the lead-out electrode conductor 3 in a predetermined form, a moisture-resistant protective film 4 made of SiO2 or Si3N4 is formed on the surface including the exposed surface of the ferromagnetic material. Next, a wear-resistant protection layer film 5 of SiC is applied to one part of the moisture-resistant protection 1114 to form a magnetoresistive element.
本実施例の耐湿保護膜４としてＳ ｉ ０２膜を用いれ
ば、このＳｉＯ２膜は強磁性薄膜抵抗体２と引出し電極
導体３とに常に密着性が良く、しかも湿気の遮断性に優
れている。さらにこの耐湿膜４上にＳｉＣ膜５を被着す
ることにより、この５ｉＣ９は高度が高いため、着磁媒
体と磁気抵抗素子を面対向させて配置しても、調整の際
に接触しても耐湿膜４を損うことはない。If an SiO2 film is used as the moisture-resistant protective film 4 of this embodiment, this SiO2 film always has good adhesion to the ferromagnetic thin film resistor 2 and the lead-out electrode conductor 3, and has excellent moisture barrier properties. Furthermore, by depositing the SiC film 5 on this moisture-resistant film 4, this 5iC9 has a high altitude, so even if the magnetized medium and the magnetoresistive element are placed face to face, they do not come into contact during adjustment. The moisture-resistant film 4 will not be damaged.
以上説明したように本発明は、強磁性薄膜抵抗体の露出
面を含む表面に、耐湿保護膜を形成し、この耐湿保護膜
上に耐摩耗保護膜を被着しているため、強磁性薄膜抵抗
体と引出し電極導体に常に密着性が良いと共に、湿気の
遮断性に優れ、さらに耐摩耗の高度が高いため着磁媒体
と磁気抵抗素子を面対向させて配置しても、調整時の接
触により耐湿膜を損うことはないという効果がある。As explained above, in the present invention, a moisture-resistant protective film is formed on the surface including the exposed surface of a ferromagnetic thin-film resistor, and a wear-resistant protective film is coated on this moisture-resistant protective film. It always maintains good adhesion between the resistor and the lead electrode conductor, has excellent moisture barrier properties, and has a high degree of wear resistance, so even when the magnetized medium and the magnetoresistive element are placed face to face, there is no contact during adjustment. This has the effect of not damaging the moisture-resistant film.
第１図（ａ）、（ｂ）は本発明の磁気抵抗素子の一実施
例の平面図およびＡ−Ａ線断面図、第２図は従来の磁気
抵抗素子の一例の断面図である。
１・・・基板、２・・・強磁性薄膜抵抗体、３・・・引
出し電極導体、４・・ＳｉＯ２耐湿保護膜、５・・・Ｓ
ｉＣ耐摩耗保護膜、６・・・保護膜。
Ｍ１図
第Ｚ図FIGS. 1(a) and 1(b) are a plan view and a sectional view taken along line A--A of an embodiment of a magnetoresistive element according to the present invention, and FIG. 2 is a sectional view of an example of a conventional magnetoresistive element. DESCRIPTION OF SYMBOLS 1...Substrate, 2...Ferromagnetic thin film resistor, 3...Leader electrode conductor, 4...SiO2 moisture-resistant protective film, 5...S
iC wear-resistant protective film, 6... protective film. M1 Figure Z
Claims (1)
の形状で形成され、前記強磁性薄膜抵抗体の露出面を含
む表面にＳｉＯ＿２あるいはＳｉ＿３Ｎ＿４からなる耐
湿膜が形成され、この耐湿膜上にＳｉＣの耐摩耗層の膜
が被着され形成されたことを特徴とする磁気抵抗素子。A ferromagnetic thin film resistor and an extraction electrode conductor are formed in a predetermined shape on a substrate, a moisture resistant film made of SiO_2 or Si_3N_4 is formed on the surface including the exposed surface of the ferromagnetic thin film resistor, and SiC is formed on this moisture resistant film. A magnetoresistive element characterized in that it is formed by depositing a wear-resistant layer film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63279719A JPH02125679A (en) | 1988-11-04 | 1988-11-04 | Magnetoresistance element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63279719A JPH02125679A (en) | 1988-11-04 | 1988-11-04 | Magnetoresistance element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02125679A true JPH02125679A (en) | 1990-05-14 |
Family
ID=17614925
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63279719A Pending JPH02125679A (en) | 1988-11-04 | 1988-11-04 | Magnetoresistance element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02125679A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0505041A2 (en) * | 1991-03-20 | 1992-09-23 | Hitachi, Ltd. | Magnetic sensor |
| JP5921710B2 (en) * | 2012-11-13 | 2016-05-24 | 三菱電機株式会社 | Printed wiring board and power supply unit |
-
1988
- 1988-11-04 JP JP63279719A patent/JPH02125679A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0505041A2 (en) * | 1991-03-20 | 1992-09-23 | Hitachi, Ltd. | Magnetic sensor |
| EP0505041A3 (en) * | 1991-03-20 | 1993-09-08 | Hitachi, Ltd. | Magnetic sensor |
| US5351027A (en) * | 1991-03-20 | 1994-09-27 | Hitachi, Ltd. | Magnetic sensor |
| JP5921710B2 (en) * | 2012-11-13 | 2016-05-24 | 三菱電機株式会社 | Printed wiring board and power supply unit |
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