JPS5936319A - Magneto-resistance effect type magnetic head - Google Patents

Magneto-resistance effect type magnetic head

Info

Publication number
JPS5936319A
JPS5936319A JP14551882A JP14551882A JPS5936319A JP S5936319 A JPS5936319 A JP S5936319A JP 14551882 A JP14551882 A JP 14551882A JP 14551882 A JP14551882 A JP 14551882A JP S5936319 A JPS5936319 A JP S5936319A
Authority
JP
Japan
Prior art keywords
layer
magneto
substrate
magnetoresistive
rubbing surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14551882A
Other languages
Japanese (ja)
Inventor
Hirotsugu Takagi
高木 博嗣
Ikuaki Yamagata
山県 生明
Akira Niimi
新見 晄
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP14551882A priority Critical patent/JPS5936319A/en
Publication of JPS5936319A publication Critical patent/JPS5936319A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127Structure or manufacture of heads, e.g. inductive
    • G11B5/33Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Magnetic Heads (AREA)

Abstract

PURPOSE:To decrease the number of film forming processes and at the same time to shield effectively the leakage of magnetic flux from a medium which is not required for detection, by forming a shielding layer at the area near a magneto-resistance element excepting the effective sense part of the element. CONSTITUTION:A sense part (MR layer) 4 formed by an Ni(80%)-Fe(20%) alloy through an electron beam vapor deposition process, etc. is vapor deposited about 500Angstrom on a substrate 1 of glass, etc. A protecting film 5 of glass, etc. is adhered to the other side of the substrate 1. Then a rubbing surface is formed by the cylindrical grinding. A shielding layer 2 of ''Sendust'', etc. is vapor deposited with 0.5-1mum thickness on the entire rubbing surface by a sputtering process, etc. Then an opening part 7 having about 3mum width is formed at the position of the MR layer 4 by an etching process, etc. Thus the magnetic flux leaked out from a medium that is undesired for detection is effectively shielded by the shielding layer 2 formed on the head rubbing surface.

Description

【発明の詳細な説明】 本発明は磁気抵抗効果型磁気ヘット、特に基板上に形成
された磁気抵抗効果素子の近傍に高透磁率層からなるシ
ールド層を設けた薄膜磁気・\ソトに関する。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a magnetoresistive magnetic head, and particularly to a thin film magnetic head in which a shield layer made of a high magnetic permeability layer is provided in the vicinity of a magnetoresistive element formed on a substrate.

このような磁気抵抗効果型磁気・\ツト(以FMRヘツ
I・という)は磁気抵抗効果素子(以下M H。
Such a magnetoresistive magnet (hereinafter referred to as FMR) is a magnetoresistive element (hereinafter referred to as MH).

素子という)を用いた磁気・\ソトであり、N=I I
t、素子は抵抗値が磁界の強さに依存して変化する特性
を利用したもので、再生出力が媒体速度に依存ぜす、磁
気信号の波長のみによって決まるため低速でも十分な再
生出力か得られ、1. C(集積回路)と同様な薄膜技
術で製造することかできることからマルチトラック化か
容易であるなとの利点を有し、最近では磁気記録再生装
置の再生用・\ソトとじて注目を集めている。このよう
なへ・11(、ヘットを短波長までの再生に使用する場
合には分解能を士げるためにM I′L素子の両側に高
透磁才層の磁性体からなるシール1〜層を設けて使用し
ている。
It is a magnetism using a magnetic element (called an element), and N=I I
The element utilizes the property that the resistance value changes depending on the strength of the magnetic field, and since the reproduction output depends on the medium speed and is determined only by the wavelength of the magnetic signal, sufficient reproduction output can be obtained even at low speeds. 1. Since it can be manufactured using the same thin film technology as C (integrated circuit), it has the advantage of being easy to create multi-tracks, and has recently attracted attention as a playback device for magnetic recording and playback devices. There is. When using such a head for reproduction up to short wavelengths, in order to improve resolution, seals 1 to 1 made of magnetic material with high permeability layers are placed on both sides of the M I'L element. is set up and used.

すなわち、このよらなMl(、・\ソ1ぐては第1図に
図示したように基板1上に高透磁率材で形成されたシー
ル1一層2を形成し、これに絶縁層3を施し、続いてM
 11.素子の層4を成膜し、さらにその上に絶縁層3
′、ジー)Iy l一層2′を成膜した後、例えは基板
1と回し材質の保護板5を重ねることによりN4■(1
・\ツトを構成している。なお、6は記録媒体を示″(
−8 このようにシールド型のMll、・\ソI−においては
一対の高透磁率層からなるルールド層2.2′が設けら
、11ており、これ、らの一対のンールト層の間隔に関
連して決まる範囲での局所的な磁界強さを検出し実質的
に再生周波数特性を広い範囲にわたって平均化しよう点
することか行われており、第2図に図示したようにシー
ルド層を設計だ場合には特性が平均化されるとともに1
)5oか広くなり短波長領域まで使用か可能になる。
In other words, as shown in FIG. 1, a seal 1 and a layer 2 made of a high magnetic permeability material are formed on a substrate 1, and an insulating layer 3 is applied thereto. , followed by M
11. A layer 4 of the element is formed, and an insulating layer 3 is further formed on it.
', G) After forming one layer 2' of N4■ (1
・Constitutes \tuto. In addition, 6 indicates the recording medium"(
-8 In this way, in the shield type Mll, \SoI-, a ruled layer 2.2' consisting of a pair of high magnetic permeability layers is provided, 11 in the interval between the pair of nhrud layers. The current method is to detect the local magnetic field strength within a related range and essentially average the reproduction frequency characteristics over a wide range, and a shield layer is designed as shown in Figure 2. , the characteristics are averaged and 1
) 5o becomes wider and can be used even in the short wavelength region.

しかし第1図に図示したような従来のMrL−\ラドて
は積層数か多く工程か複雑であるばかりでなく成膜時に
発生ずる膜の内部応力が大きくなり膜か剥れやすく、ま
た基板や保護板5に磁性材料を使用すると外部からのバ
イアス磁界をもノールトしてしまうという欠点かある。
However, in the conventional MrL-\RAD as shown in Fig. 1, it is not only complicated due to the number of laminated layers and many steps, but also the internal stress of the film generated during film formation becomes large and the film is likely to peel off, and the substrate and If a magnetic material is used for the protection plate 5, there is a drawback that the bias magnetic field from the outside is also blocked.

従って本発明は、このような従来の欠点を除去するもの
て成膜工程か減少でき、また検知に不必要な媒体からの
磁束のもれを有効にシール1−するこ吉かてきるMlも
・\ツト′を提供するこ吉を目的吉する。
Therefore, the present invention eliminates these conventional drawbacks, reduces the number of film forming steps, and also improves Ml, which can effectively seal the leakage of magnetic flux from the medium that is unnecessary for detection.・Make Kokichi who provides \tsuto' good luck.

本発明によイ1はこの目的を達成ずろ為に磁気抵抗効果
素子の実効検知部を除いて〜−ルト層を設けるような構
成を採用した。
In order to achieve this object, the first embodiment of the present invention employs a structure in which a root layer is provided except for the effective sensing portion of the magnetoresistive element.

以下、図面に示す実施例に基き本発明の詳細な説明する
Hereinafter, the present invention will be described in detail based on embodiments shown in the drawings.

第3図には本発明の一つの実施例か図示さA1ており、
同図において例えはツjラス基板1土に電子ヒーム蒸着
法なとの薄膜堆積技術を用いて80%N夏−20%Pc
合金からなる磁気抵抗効果素子検知部(以下M R,層
きいう)4をおよそ500j〜蒸着する。その後反対側
から同じく力うスム゛吉からなる保護板5を接着した後
、円筒研削により摺動面も形成する。この摺動面にスパ
ックリンク法などにより例えはセンタストなとからなる
ンールト層2を05〜1μIl+の厚さで全面蒸着した
後、エラ千ンクなどによりMl(、層4の位置に約3μ
Il+の幅を治する開口部7を形成する。
FIG. 3 shows one embodiment of the present invention A1,
In the figure, for example, 80%N-20%Pc is deposited on a glass substrate using a thin film deposition technique such as electron beam evaporation.
Approximately 500 layers of a magnetoresistive element detection portion (hereinafter referred to as MR layer) 4 made of an alloy is deposited. After that, a protective plate 5 made of Sumukichi, which is also applied with force, is adhered from the opposite side, and a sliding surface is also formed by cylindrical grinding. On this sliding surface, a Nhult layer 2 made of, for example, centast, is vapor-deposited on the entire surface of the sliding surface to a thickness of 0.5 to 1 μIl+ using a spack-link method, etc., and then Ml (approximately 3μ
An opening 7 is formed to accommodate the width of Il+.

このような構成ではシールド層をヘッド摺動面に設けて
いるので検知に不必要な媒体からの磁束のもれを有効に
シールl−するこ吉かてき、同時にバイアス磁界の媒体
面へのもれをシールドするこ吉かてきるという効果が得
られる。
In this configuration, since the shield layer is provided on the head sliding surface, it is effective for effectively sealing off the leakage of magnetic flux from the medium that is unnecessary for detection, and at the same time, it is effective in preventing the bias magnetic field from reaching the medium surface. You can get the effect of being able to shield Kokichi.

なお、上述した実施例において基板1、保護板5にはカ
ラスのほかシリコン、田−ファイヤなどの非磁性かつi
tl摩耗性の優れたものを用いることもてきる。またi
’vllL層4には上記材料のほかNi−C0合金及び
Ni −Fe、 Ni−Coを主成分とする合金膜でも
よく、またMAL層の厚みは300〜1000Aか好ま
しい。
In addition, in the above-described embodiment, the substrate 1 and the protection plate 5 are made of non-magnetic and i
It is also possible to use materials with excellent tl abrasion resistance. Also i
In addition to the above-mentioned materials, the 'vllL layer 4 may be made of a Ni--C0 alloy or an alloy film containing Ni--Fe or Ni--Co as its main components, and the thickness of the MAL layer is preferably 300 to 1000 Å.

またシールド層2にはセンタストのほかNi −に’e
合金高透磁率フェライト、Fe−I’ −C,Co −
S i −■3などの非晶質磁性材料なとが使用できる
か、耐蝕性、耐摩耗性に優れたセンクスI・、フェライ
ト、非晶質材料か好ましい。シールド層の厚みは厚くな
るほどシール1〜効果か大きくなるか、一方スペーシン
ク損失の増加を招くので、上記材料を用いた場合にはO
:3〜2μmnか適当である。しかし、それぞれの材料
の特性に応じてその厚さはもちろん他の値に設定するこ
吉ができる。またシールド層開口部7の幅は少なくとも
シールド層厚みの2倍以上か必要て、2〜10μIll
の幅か好ましく、その形成方法はエソチンクなどのほか
にリフトオフ法で形成しても良い。
In addition to centast, the shield layer 2 contains Ni − and 'e
Alloy high permeability ferrite, Fe-I'-C,Co-
An amorphous magnetic material such as Si-3 can be used, or preferably an amorphous material such as Senx I, ferrite, or an amorphous material with excellent corrosion resistance and wear resistance. The thicker the shield layer is, the greater the sealing effect will be.On the other hand, it will increase the space sink loss, so if the above materials are used, the O
:3 to 2 μm or appropriate. However, the thickness can of course be set to other values depending on the characteristics of each material. The width of the shield layer opening 7 must be at least twice the thickness of the shield layer, and should be 2 to 10μIll.
It is preferable to have a width of 100 mm, and the method for forming it may be a lift-off method in addition to etching.

第4図は、本発明の他の実施例か図/j′、、さねてお
り、同図において第3図譜同一ないし同様な部分は、同
一参照番号か付さねている。この実施例ではガラス基板
1及びカラス保護5の端面にあらかじめ非晶質薄帯(例
えはF e −P −C,、合金)を接着しておく。続
いて基板1上にスパックリンク法て5io2の絶縁層3
を311Il]、電子ヒーノ、蒸着法で、また80%N
i−20%F eのMR,層4を100A、さらにスパ
ッタリンク法で5in2の絶縁層3′を3fUn 0)
INさてそイ1そイ1成膜する。さらにその−14に保
護板5を接着し7た後槽動而を形成する1、その後シー
ル1へ層2を摺動面に形成し、二I−ツチンクなどによ
りNI It・層の位置から所定の幅のシールド層2を
絶縁層3.3′及びMIt、層4か現れるまで取り除く
FIG. 4 shows another embodiment of the present invention, and the same or similar parts in FIG. 3 are designated by the same reference numerals. In this embodiment, an amorphous ribbon (for example, Fe-P-C, alloy) is bonded to the end faces of the glass substrate 1 and the glass protector 5 in advance. Subsequently, an insulating layer 3 of 5io2 is deposited on the substrate 1 using a spackle link method.
311Il], electronic heater, evaporation method, and 80%N
i-20%Fe MR, layer 4 at 100A, and 5in2 insulating layer 3' by sputter link method at 3fUn 0)
IN Now, layer 1 is deposited. Furthermore, the protection plate 5 is bonded to the -14, and after forming the tank moving part 1, the layer 2 is formed on the sliding surface of the seal 1, and the layer 2 is fixed from the position of the NI It layer using a screw or the like. The shielding layer 2 having a width of 2 is removed until the insulating layer 3.3' and the MIt layer 4 are exposed.

このようにして第:う図の実施例と同様にN・11(、
素子の実効検知部を除いてシールド層2か摺動面に形成
されたM R・・\ツ1−か得られる。このMl(、、
−\′ノドも第3図のN・11(、・\ソ1−、1−同
様な効果か得らイする6、なお、M H,層4、シール
ド層2の材料吉して第:3図にあけた月利のいずれを用
いても良く、また絶縁層には5iO1SI、N4なとて
も良く厚みは2〜5μI11か好ましい。また上部絶縁
層3′は保護板5の接着剤で兼用することも可能である
In this way, similarly to the embodiment shown in Fig.
The shield layer 2 is formed on the sliding surface except for the effective sensing portion of the element. This Ml(,,
-\' throat also obtains the same effect as N·11(, \ So1-, 1-6) in Fig. 3. Note that the material of M H, layer 4, and shield layer 2 is good. Any of the monthly rates shown in Figure 3 may be used, and 5iO1SI and N4 are very good for the insulating layer, and preferably the thickness is 2 to 5μI11.The upper insulating layer 3' is also used as the adhesive for the protective plate 5. It is also possible.

以上説明したように本発明によるMl(、ヘッドてはシ
ール1一層をN=I 1.L素子の実効検知部を除いて
・\ソト摺動面に設けたことにより、従来て必要とした
成膜工程かかなり減少できるようになり、さらに検知に
不必要な媒体からの磁束のもれを有効にシールドするこ
とかでき、かつ一般にl’v1層を線形領域で使用する
ために用いるバイアス磁界の媒体面への洩れをシールド
する効果を持たずことか可能である。
As explained above, the head according to the present invention has a single layer of seal 1 on the sliding surface except for the effective detection part of the N=I 1.L element, which eliminates the structure required in the past. The film process can be considerably reduced, and leakage of magnetic flux from the medium that is unnecessary for sensing can be effectively shielded, and the bias magnetic field generally used for using the l'v1 layer in the linear region can be significantly reduced. It is possible that it does not have the effect of shielding leakage to the medium surface.

なお、本発明の実施例においては記録媒体をヘラ1へか
接触する場合について記述したか、非接触の場合におい
ても適用し得ることは明らかである。
In the embodiments of the present invention, the case where the recording medium is brought into contact with the spatula 1 has been described, but it is clear that the present invention can also be applied to a case where the recording medium is not brought into contact with the spatula 1.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は従来のMILヘッドの構成を示した断面図、第
2図はM R・\ラドの再生波長と再生出力の関係を示
した特性図、第°3図及び第4図はN・1lL−。 ツトのそれぞれ異なる実施例の構成を示した断面図であ
る。 1・・・基板       2.2′・・・シールド層
3.3′・・・絶縁層    4−M T1.層5・・
・保護板      6・・・記録媒体7・・・開口部 手続補正書(自効 昭和57年lO月26日 特許庁長官殿 1、事件の表示 昭和 57 年 特許願 第 145518  号2、
発明の名称 磁気抵抗効果型磁気ヘッド 3、補正をする者 事件との関係   特許出願人 名  称      (100)  キャノン株式会社
4、代理人    電話 03 (268)2481 
(イり明細書の発明の詳細な説明の欄 6、補正の内容 別紙の通り l)明細書第6頁第16行目の「カラス基板l」を[摺
動部として研削形成されたガラス基板1」に訂正する。 2)同第6頁第17行目の「を接着」を[のシールド層
2を接着」に訂正する。 3)同第20行目の400組」をr400λ成)Iり、
パターン化したのち」に訂正する。 4)同第7頁第3行目から第7行目の「摺動画を・・・
・・・取り除く。」を[摺動面表面の凹凸をr+i坦化
する程度軽く研削する。」に訂正する。 5)同第8頁第2行目の「MR層J をrMR素r−」
に訂正する。 6)同第8頁第3行目から第5行11の「バイアス磁界
の・・・・・・可能である。」を[バイアス磁界はシー
ルドすることなく M R7;子に有効に作用させるこ
とが可能である。」に訂正する。 〜92
Fig. 1 is a cross-sectional view showing the configuration of a conventional MIL head, Fig. 2 is a characteristic diagram showing the relationship between the reproduction wavelength and reproduction output of MR.\rad, and Figs. 3 and 4 are N. 1lL-. FIG. 4 is a cross-sectional view showing the configuration of different embodiments of the socket. 1...Substrate 2.2'...Shield layer 3.3'...Insulating layer 4-M T1. Layer 5...
・Protection plate 6...Recording medium 7...Aperture procedure amendment (self-effective date of October 26, 1980, Mr. Commissioner of the Japan Patent Office 1, Indication of the case, Patent Application No. 145518, 1982, 2)
Name of the invention Magnetoresistive magnetic head 3, Relationship to the person making the correction Case Patent applicant name (100) Canon Co., Ltd. 4, agent Telephone: 03 (268) 2481
(As per Column 6 of the Detailed Description of the Invention of the Specification, Contents of the Amendment in the Attachment l) "Glass substrate l" on page 6, line 16 of the specification [Glass substrate formed by grinding as a sliding part] Corrected to 1. 2) On page 6, line 17, "adhere to" is corrected to "adhere to the shield layer 2." 3) 400 pairs in the 20th line of the same line is r400λ)
After creating a pattern, correct it. 4) On page 7, lines 3 to 7, “Suri animation...
···remove. '' is lightly ground to the extent that the unevenness on the sliding surface is flattened by r+i. ” is corrected. 5) "MR layer J rMR element r-" on page 8, line 2
Correct. 6) Change "It is possible to apply a bias magnetic field" in lines 3 to 5, line 11 of page 8, to [The bias magnetic field must be applied effectively to the child without shielding. is possible. ” is corrected. ~92

Claims (3)

【特許請求の範囲】[Claims] (1)基板上に形成された磁気抵抗効果素子の近ン 傍に高透磁率層からなる#−ルト層を設けてなる磁気抵
抗効果型磁気へツーパにおいて、前記レールト層を磁気
抵抗効果素子の実効検知部を除いて形成し、たことを特
徴とする磁気抵抗効果型磁気・′\ツト。
(1) In a magnetoresistive magneto-to-layer in which a #-root layer made of a high magnetic permeability layer is provided in the vicinity of a magnetoresistive element formed on a substrate, the railt layer is attached to the magnetoresistive element. A magnetoresistance effect type magnet, which is characterized in that it is formed without the effective detection part.
(2)前記高透磁率磁性材料はNi−Fe合金であるこ
とを特徴とする特許請求の範囲第1JJ′iに記載の磁
気抵抗効果型磁気へツー・。
(2) The magnetoresistive magnet according to claim 1, wherein the high permeability magnetic material is a Ni--Fe alloy.
(3)前記高透磁率磁性材料はフェライト材料であるこ
とを特徴とする特許請求の範囲第1項に記載の(1θ気
抵抗効果型磁気−\ラド。 (・1)前記高透磁率磁性材料はFc −P −Cの非
晶質磁性材料であるこさを特徴とする特許請求の範に 間第1頂弁記載の磁気抵抗効果型磁気・\ソ1−6(5
)前記高透磁率磁性材料はCo−8i −IFの非晶質
磁性材料であることを特徴とする特許、請求の範囲第1
項に記載の磁気抵抗効果型磁気・\ツ1−6
(3) The high magnetic permeability magnetic material is a ferrite material. is an amorphous magnetic material of Fc-P-C.
) A patent characterized in that the high permeability magnetic material is an amorphous magnetic material of Co-8i-IF, Claim 1
Magnetoresistive magnetism described in Section 1-6
JP14551882A 1982-08-24 1982-08-24 Magneto-resistance effect type magnetic head Pending JPS5936319A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14551882A JPS5936319A (en) 1982-08-24 1982-08-24 Magneto-resistance effect type magnetic head

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14551882A JPS5936319A (en) 1982-08-24 1982-08-24 Magneto-resistance effect type magnetic head

Publications (1)

Publication Number Publication Date
JPS5936319A true JPS5936319A (en) 1984-02-28

Family

ID=15387080

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14551882A Pending JPS5936319A (en) 1982-08-24 1982-08-24 Magneto-resistance effect type magnetic head

Country Status (1)

Country Link
JP (1) JPS5936319A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5473492A (en) * 1993-03-03 1995-12-05 Tdk Corporation Magnetic head including a reproducing head utilizing a magnetoresistance effect and having a magnetic shielding film containing nitrogen
US6734671B2 (en) 2001-03-07 2004-05-11 Denso Corporation Magnetic sensor and manufacturing method therefor
JP2008228769A (en) * 2007-03-16 2008-10-02 Morita Mfg Co Ltd Root canal length measuring device and root canal treatment device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5473492A (en) * 1993-03-03 1995-12-05 Tdk Corporation Magnetic head including a reproducing head utilizing a magnetoresistance effect and having a magnetic shielding film containing nitrogen
US6734671B2 (en) 2001-03-07 2004-05-11 Denso Corporation Magnetic sensor and manufacturing method therefor
US7078238B2 (en) 2001-03-07 2006-07-18 Denso Corporation Method for manufacturing magnetic sensor
JP2008228769A (en) * 2007-03-16 2008-10-02 Morita Mfg Co Ltd Root canal length measuring device and root canal treatment device
US8920166B2 (en) 2007-03-16 2014-12-30 J. Morita Manufacturing Corporation Root canal length measuring apparatus and root canal therapy apparatus

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