JPS61248214A - Thin film magnetic head - Google Patents
Thin film magnetic headInfo
- Publication number
- JPS61248214A JPS61248214A JP60091668A JP9166885A JPS61248214A JP S61248214 A JPS61248214 A JP S61248214A JP 60091668 A JP60091668 A JP 60091668A JP 9166885 A JP9166885 A JP 9166885A JP S61248214 A JPS61248214 A JP S61248214A
- Authority
- JP
- Japan
- Prior art keywords
- film
- insulating layer
- thin film
- head
- alloy
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005291 magnetic effect Effects 0.000 title claims abstract description 68
- 239000010409 thin film Substances 0.000 title claims description 25
- 238000000576 coating method Methods 0.000 claims abstract description 12
- 230000005294 ferromagnetic effect Effects 0.000 claims abstract description 7
- 239000010408 film Substances 0.000 claims description 69
- 230000005415 magnetization Effects 0.000 claims description 9
- 239000004020 conductor Substances 0.000 abstract description 27
- 229910000889 permalloy Inorganic materials 0.000 abstract description 26
- 239000000758 substrate Substances 0.000 abstract description 25
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 11
- 239000011248 coating agent Substances 0.000 abstract description 11
- 229910052681 coesite Inorganic materials 0.000 abstract description 6
- 229910052906 cristobalite Inorganic materials 0.000 abstract description 6
- 229910052682 stishovite Inorganic materials 0.000 abstract description 6
- 229910052905 tridymite Inorganic materials 0.000 abstract description 6
- 239000000377 silicon dioxide Substances 0.000 abstract description 5
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 5
- 238000000034 method Methods 0.000 description 22
- 230000003746 surface roughness Effects 0.000 description 19
- 229910045601 alloy Inorganic materials 0.000 description 15
- 239000000956 alloy Substances 0.000 description 15
- 229910000640 Fe alloy Inorganic materials 0.000 description 13
- 229910003271 Ni-Fe Inorganic materials 0.000 description 13
- 239000011521 glass Substances 0.000 description 12
- 229910000859 α-Fe Inorganic materials 0.000 description 8
- 230000035699 permeability Effects 0.000 description 6
- 238000001552 radio frequency sputter deposition Methods 0.000 description 6
- 238000000992 sputter etching Methods 0.000 description 5
- QTBSBXVTEAMEQO-UHFFFAOYSA-N acetic acid Substances CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 4
- 229910000881 Cu alloy Inorganic materials 0.000 description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- 238000003486 chemical etching Methods 0.000 description 3
- 238000005566 electron beam evaporation Methods 0.000 description 3
- 230000004907 flux Effects 0.000 description 3
- 229910017604 nitric acid Inorganic materials 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 235000011007 phosphoric acid Nutrition 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 150000003377 silicon compounds Chemical class 0.000 description 2
- 229910018182 Al—Cu Inorganic materials 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- 229910018499 Ni—F Inorganic materials 0.000 description 1
- 229910018605 Ni—Zn Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001017 electron-beam sputter deposition Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003302 ferromagnetic material Substances 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910000702 sendust Inorganic materials 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Landscapes
- Magnetic Heads (AREA)
- Hall/Mr Elements (AREA)
Abstract
Description
【発明の詳細な説明】
く技術分野〉
本発明は1軸磁気異方性を有する強磁性薄膜の磁化困難
軸方向に印加される信号磁界の変化を磁化容易軸方向の
電気抵抗変化として検出する磁気抵抗効果素子(以下、
MR素子という)を具備して磁気記録媒体に記録される
信号の検出を行なう薄膜磁気ヘッド(以下、薄III!
MRヘッドという)に関する。[Detailed Description of the Invention] Technical Field> The present invention detects changes in a signal magnetic field applied in the direction of the hard axis of magnetization of a ferromagnetic thin film having uniaxial magnetic anisotropy as changes in electrical resistance in the direction of the easy axis of magnetization. Magnetoresistive element (hereinafter referred to as
A thin film magnetic head (hereinafter referred to as Thin III!) equipped with a thin film magnetic head (hereinafter referred to as MR element) for detecting signals recorded on a magnetic recording medium.
(referred to as MR head).
〈従来技術〉
従来、薄膜MRヘッドは、巻線型の磁気ヘッドと比較し
て多くの利点があることが知られている。<Prior Art> Conventionally, thin film MR heads are known to have many advantages over wire-wound magnetic heads.
この薄膜MRヘッドは、磁気テープ等の磁気記録媒体に
書き込まれた信号磁界を受けることにより、MR素子内
部の磁化方向が変化し、この磁化方向の変化に応じたM
R素子の内部抵抗の変化を外部出力として取り出すもの
である。したがって、薄膜MRヘッドは、磁束応答型の
ヘッドであり、磁気記録媒体の移送速度に依存せずに信
号磁界を再生できる。この薄膜MRヘッドは、半導体の
微細加工技術により高集積化及び多素子化が容易である
ので、高密度記録が行われる固定ヘッド式PCM録音機
の再生用磁気ヘッドとして有望視されている。In this thin-film MR head, the magnetization direction inside the MR element changes by receiving a signal magnetic field written on a magnetic recording medium such as a magnetic tape, and the M
The change in internal resistance of the R element is extracted as an external output. Therefore, the thin film MR head is a magnetic flux responsive head and can reproduce a signal magnetic field without depending on the transport speed of the magnetic recording medium. Since this thin film MR head can easily be highly integrated and multi-elemented using semiconductor microfabrication technology, it is seen as a promising magnetic head for reproduction in fixed head type PCM recorders that perform high-density recording.
元来、MR素子は外部磁界に対して2乗変化を示す感応
特性をもつことから、MR素子を再生ヘッドとして構成
する場合には、素子形状をストライプ状にするとともに
、線型応答特性を得るために所定のバイアス磁界を印加
する構成を備えることが必要である。このバイアス磁界
を印加する方法には、導体に直流電流を流すことにより
バイアス磁界を誘起する方法及びCo−P層等の高抗磁
力薄膜を用いてバイアス磁界を印加する方法等が知られ
ている(特願昭55−126255号、第4回日本応用
磁気学会学術講演概要集(1980)5PA−4rマル
チトランク薄Ill!MRヘッド」参照)。実際の使用
に際しては、薄膜MRヘッドでは上記導体または高抗磁
力薄膜の上に絶縁層を介してMR素子が形成される。Originally, an MR element has a sensitivity characteristic that shows a square change in response to an external magnetic field. Therefore, when configuring an MR element as a read head, the element shape is made into a stripe shape and a linear response characteristic is obtained. It is necessary to provide a configuration for applying a predetermined bias magnetic field to the magnetic field. Known methods for applying this bias magnetic field include a method of inducing a bias magnetic field by flowing a direct current through a conductor, and a method of applying a bias magnetic field using a high coercive force thin film such as a Co-P layer. (Refer to Japanese Patent Application No. 55-126255, 4th Japanese Society of Applied Magnetics, Abstracts of Academic Lectures (1980) 5PA-4r Multi-Trunk Thin Ill! MR Head). In actual use, in a thin film MR head, an MR element is formed on the conductor or high coercive force thin film with an insulating layer interposed therebetween.
一方、MR素子単体で構成した薄膜MRヘッドよりも、
MR素子をヘッド先端から離して磁気記録媒体に発生し
た磁束をMR素子まで導く磁束導入路(以下、ヨークと
いう)を配置した第4図のような構造の通常ヨークタイ
プMRヘッド(以下、YMRヘッドという)と呼ばれる
薄膜磁気ヘッドの方が信号の分解能の向上やMR素子の
耐久性の゛向上に有効であることが知られている。(第
8回日本応用磁気学会学術講演概要集(1984)14
PB−11rヨ一クタイプMRヘッドの再生特性」参照
)。On the other hand, compared to a thin film MR head composed of a single MR element,
A normal yoke-type MR head (hereinafter referred to as a YMR head) has a structure as shown in Figure 4, in which a magnetic flux introducing path (hereinafter referred to as yoke) is arranged to separate the MR element from the tip of the head and guide the magnetic flux generated in the magnetic recording medium to the MR element. It is known that a thin-film magnetic head called MR head is more effective in improving the resolution of signals and the durability of MR elements. (Summary of the 8th Japanese Society of Applied Magnetics Academic Lectures (1984) 14
(Refer to "Reproduction characteristics of PB-11r Yoke type MR head").
第4図は従来のYMRヘッドのトラック幅方向に垂直な
方向の断面構造を示す。上部ヨーク11は、通常膜厚が
0.5〜1.0pm程度のパーマロイ(Ni−Fe合金
)膜で作製され、磁気記録媒体2で発生した磁界をMR
素子7に導くための磁路となる。MR素子7は、パーマ
ロイ (N i −Fe合金)蒸着膜で作製され、膜厚
が200〜500人、トランク幅は多トラツク構成とな
るため50〜200μm程度に設定される。さらに、バ
イアス磁界を印加するために、Al、CuまたはA1−
Cu合金等の膜からなる導体4が配設される。FIG. 4 shows a cross-sectional structure of a conventional YMR head in a direction perpendicular to the track width direction. The upper yoke 11 is usually made of a permalloy (Ni-Fe alloy) film with a film thickness of about 0.5 to 1.0 pm, and converts the magnetic field generated by the magnetic recording medium 2 into MR.
This becomes a magnetic path for guiding to the element 7. The MR element 7 is made of a permalloy (N i -Fe alloy) vapor-deposited film, has a film thickness of 200 to 500 μm, and has a trunk width of about 50 to 200 μm since it has a multi-track configuration. Furthermore, in order to apply a bias magnetic field, Al, Cu or A1-
A conductor 4 made of a film of Cu alloy or the like is provided.
ヘッドギャップ部12は、実際に使用される記録波長が
0.5μm程度であるので、0.2〜0. 3μm程度
に設定される。下部ヨークを形成する基板1は、高透磁
率磁性体からなり、Ni−ZnフェライトまたはMn−
Znフェライトが用いられる。上述の導体4.MR素子
7および上部ヨーク11は、基板1上に絶縁層3.5.
9を介して形成される。Since the recording wavelength actually used is about 0.5 μm, the head gap portion 12 has a wavelength of 0.2 to 0.5 μm. The thickness is set to about 3 μm. The substrate 1 forming the lower yoke is made of a high permeability magnetic material, and is made of Ni-Zn ferrite or Mn-
Zn ferrite is used. Conductor 4 above. The MR element 7 and the upper yoke 11 are provided on the substrate 1 with insulating layers 3, 5, .
Formed via 9.
導体4とMR素子7の間に介在する絶縁層5は、段差被
覆が良好なRFスパフタ法または、プラズマCVD法に
よって導体4上に形成される。しかるに、この絶縁層5
の良好な膜質を得るためには、基板1の温度を少なくと
も約200″C前後に上げる必要がある。したがって、
すでに基板1上に絶縁層3を介して形成されている導体
4は、基板1の温度上昇により表面荒れを起す。そして
、この表面荒れが生じた導体4の上に形成された絶縁層
5は、導体4の表面荒れがそのまま反映してその表面粗
度が大きくなり、さらに、この絶縁層5の上に形成され
たパーマロイ(Ni−Fe合金)蒸着膜からなるMR素
子7は、絶縁層5の表面粗度が大であるが故に結晶の配
向性が乱れ、良好な磁気特性が得られない。The insulating layer 5 interposed between the conductor 4 and the MR element 7 is formed on the conductor 4 by an RF sputtering method or a plasma CVD method, which provides good step coverage. However, this insulating layer 5
In order to obtain good film quality, it is necessary to raise the temperature of the substrate 1 to at least about 200''C.
The surface of the conductor 4 already formed on the substrate 1 via the insulating layer 3 becomes rough due to the temperature rise of the substrate 1. The surface roughness of the insulating layer 5 formed on the conductor 4 with this surface roughness increases as it reflects the surface roughness of the conductor 4. In the MR element 7 made of a permalloy (Ni--Fe alloy) vapor-deposited film, the surface roughness of the insulating layer 5 is large, so the crystal orientation is disturbed and good magnetic properties cannot be obtained.
第1表はこの導体4及び絶縁層5の表面粗度の増大によ
りMR素子7の磁気特性が低下することを示す。なお、
特性を測定するために基板1として上述のN i −Z
nフェライトあるいはMn−Znフェライト6代わり
にガラス(#0211)基板を用い、したがって、絶縁
層3を無くし、ガラス(#0211)基板の上に直接導
体4を形成し、この導体4の上に絶縁層5、さらにこの
絶縁層5の上にパーマロイ(Ni−Fe合金)蒸着膜か
らなるMR素子7を形成する。第1表には比較のために
、ガラス(#0211)基板の上に直接パーマロイ(N
i−Fe合金)蒸着膜を形成した場合、及び、ガラス(
#0211)基板の上にRFスパッタ法により5i02
膜を形成しこの5i02膜の上にパーマロイ (Ni−
Fe合金)蒸着膜を形成した場合のそれぞれのパーマロ
イ (Ni−Fe合金)蒸着膜の磁気特性を示す。Table 1 shows that the magnetic properties of the MR element 7 deteriorate as the surface roughness of the conductor 4 and the insulating layer 5 increases. In addition,
In order to measure the characteristics, the above-mentioned N i -Z was used as the substrate 1.
A glass (#0211) substrate is used instead of the n-ferrite or Mn-Zn ferrite 6. Therefore, the insulating layer 3 is eliminated, the conductor 4 is formed directly on the glass (#0211) substrate, and the insulating layer is formed on the conductor 4. An MR element 7 made of a permalloy (Ni--Fe alloy) vapor-deposited film is formed on the layer 5 and the insulating layer 5. For comparison, Table 1 shows permalloy (N) directly on a glass (#0211) substrate.
i-Fe alloy) is formed, and glass (i-Fe alloy) is formed.
#0211) 5i02 on the substrate by RF sputtering method
A film is formed and permalloy (Ni-
The magnetic properties of each Permalloy (Ni-Fe alloy) deposited film are shown below.
この第1表から明らかなように、ガラス基板の上に導体
4を形成した状態では、導体4の表面粗度は〜10Å以
下であるが、この導体4の上にS i 02からなる絶
縁層5を形成すると、この絶縁層5の表面粗度が20〜
100人に増大する。As is clear from Table 1, when the conductor 4 is formed on a glass substrate, the surface roughness of the conductor 4 is ~10 Å or less, but an insulating layer made of Si 02 is formed on the conductor 4. 5, the surface roughness of this insulating layer 5 is 20~
Increases to 100 people.
その結果、パーマロイ (Ni−Fe合金)蒸着膜の磁
気特性は、ガラス(#0211)基板上及びガラス(#
0211)基板上に5i02膜を介して形成されたパー
マロイ (Ni−Fe合金)蒸着膜に比べて、磁化容易
軸方向の抗磁力Hc及び磁気困難軸方向の抵磁力Hch
がともに大きくなる。As a result, the magnetic properties of permalloy (Ni-Fe alloy) deposited films on glass (#0211) substrates and glass (#0211)
0211) Compared to a permalloy (Ni-Fe alloy) vapor deposited film formed on a substrate via a 5i02 film, the coercive force Hc in the easy axis direction and the reluctance Hch in the hard axis direction
Both become larger.
このように、従来のYMRヘッドにおいては、MR素子
を形成するパーマロイ(Ni−Fe合金)蒸着膜の磁気
特性の劣下により強磁性体特有のノイズや信号波形の歪
による再生波形のS/N比に与える影響が大きい問題に
なる。As described above, in conventional YMR heads, the S/N of the reproduced waveform due to the noise peculiar to ferromagnetic materials and the distortion of the signal waveform due to the deterioration of the magnetic properties of the permalloy (Ni-Fe alloy) vapor deposited film that forms the MR element. This is a problem that has a large impact on the ratio.
〈発明の目的〉
本発明は、上記問題点に鑑みてなされたものであり、導
体層が存在する場合においてもMR素子の良好な磁気特
性が得られるようにした薄膜磁気ヘッドを提供すること
を目的とする。<Object of the Invention> The present invention has been made in view of the above-mentioned problems, and an object of the present invention is to provide a thin-film magnetic head in which good magnetic properties of an MR element can be obtained even when a conductor layer is present. purpose.
〈発明の構成〉
本発明は、1軸磁気異方性を有する強磁性薄膜の磁化困
難軸方向に印加される信号磁界の変化を電気抵抗変化と
して検出する薄膜磁気ヘッドにおいて、絶縁層上に塗布
工程を経て形成されたS L’oz膜上に上記強磁性薄
膜が形成されてなることを特徴とする。<Configuration of the Invention> The present invention provides a thin film magnetic head that detects changes in a signal magnetic field applied in the direction of the hard axis of magnetization of a ferromagnetic thin film having uniaxial magnetic anisotropy as changes in electrical resistance. It is characterized in that the above-mentioned ferromagnetic thin film is formed on an S L'oz film formed through a process.
〈実施例〉 以下、本発明の一実施例について説明する。<Example> An embodiment of the present invention will be described below.
第1図は本実施例のYMRヘッドの磁気記録媒体のトラ
ック幅方向に垂直な方向の断面構造を示し、第2図はこ
のYMRヘッドの平面構成を示す。FIG. 1 shows the cross-sectional structure of the YMR head of this embodiment in a direction perpendicular to the track width direction of the magnetic recording medium, and FIG. 2 shows the planar structure of this YMR head.
第1図は第2図のYMRヘッドのA−A’断面の構造を
示す。FIG. 1 shows the structure of the YMR head shown in FIG. 2 taken along the line AA'.
上部ヨーク11は、膜厚が0.5〜1.0μm程度のパ
ーマロイ (Ni−Fe合金)等の高透磁率磁性膜から
なり、この上部ヨーク11は磁気記録媒体2で発生した
磁界をMR素子7へ導くための磁路となる。MR素子7
ばパーマロイ (N i −Fe合金)蒸着膜からなり
、その膜厚は200〜500人であり、トラック幅は多
トランク構成となるため50〜200μm程度に設定さ
れる。MR素子7は、絶縁層5に形成された塗布型5i
02膜6の上に形成される。バイアス磁界をMR素子・
7に印加するための導体層4は、M OSCuまたは
AJ2−Cu合金等の膜からなる。下部ヨークを形成す
る基板1はNi−ZnフェライトまたはMn−Znフェ
ライトからなる。この基板1上に絶縁層3を介して導体
層4が形成され、導体層4の上に絶縁層5と塗布型5i
0211111i5を介してMR素子7が形成され、M
R素子7の上に絶縁層9を介して上部ヨーク11が形成
される。The upper yoke 11 is made of a high permeability magnetic film such as permalloy (Ni-Fe alloy) with a film thickness of approximately 0.5 to 1.0 μm. It becomes a magnetic path to lead to 7. MR element 7
It is made of a permalloy (N i -Fe alloy) vapor-deposited film, the thickness of which is 200 to 500, and the track width is set to about 50 to 200 μm since it has a multi-trunk configuration. The MR element 7 has a coating type 5i formed on the insulating layer 5.
02 film 6. The bias magnetic field is transferred to the MR element.
The conductor layer 4 for applying voltage to the voltage 7 is made of a film such as MOSCu or AJ2-Cu alloy. The substrate 1 forming the lower yoke is made of Ni--Zn ferrite or Mn--Zn ferrite. A conductor layer 4 is formed on this substrate 1 via an insulating layer 3, and an insulating layer 5 and a coating mold 5i are formed on the conductor layer 4.
MR element 7 is formed via 0211111i5, and M
Upper yoke 11 is formed on R element 7 with insulating layer 9 interposed therebetween.
先ず、基板1(7)上ニs i 02 、 S ia
N4 、 Al2O3等からなる絶縁N3がRFスパッ
タ法またはP−CVD法等により形成される。次に、こ
の絶縁層3の上にM o + Cu + A 12−
Cu合金等からなる導体層4が抵抗加熱法、RFスパッ
タ法あるいは電子ビーム蒸着法等により形成される。こ
の導体層4を目的の形状に加工するためには、ケミカル
エツチング法、スパッタエツチング法あるいはイオンミ
ーリング法が用いられる。例を上げて説明すると、ケミ
カルエツチング法の場合、Cu膜は硝酸(HNOa )
十過硫酸アンモニウム((NH3)2320B)生水(
H20) 、 AJ−Cu膜は水酸化カリウム(K O
H)十過硫酸アンモニウム((NHa ) 2320B
)生水(H20)またはリン酸(H3PO4)十硝酸
(HNO3)+酢酸(CHa C00H)生水(H20
)なるエツチング液を用いれば良い。スパッタエツチン
グ法またはイオンミーリング法の場合には、M o 。First, on the substrate 1 (7) Ni s i 02 , S ia
The insulation N3 made of N4, Al2O3, etc. is formed by RF sputtering, P-CVD, or the like. Next, on this insulating layer 3, M o + Cu + A 12-
A conductor layer 4 made of a Cu alloy or the like is formed by a resistance heating method, an RF sputtering method, an electron beam evaporation method, or the like. In order to process this conductor layer 4 into a desired shape, a chemical etching method, a sputter etching method, or an ion milling method is used. To explain with an example, in the case of the chemical etching method, the Cu film is etched using nitric acid (HNOa).
Ammonium tenpersulfate ((NH3)2320B) raw water (
H20), AJ-Cu film is made of potassium hydroxide (KO
H) Ammonium tenpersulfate ((NHa) 2320B
) Raw water (H20) or phosphoric acid (H3PO4) deca-nitric acid (HNO3) + acetic acid (CHa C00H) raw water (H20
) may be used. In the case of sputter etching method or ion milling method, M o .
Cu、Al−Cu等の膜はArガスを導入すれば加工す
ることができる。Films such as Cu and Al-Cu can be processed by introducing Ar gas.
上述のようにして形成された導体層4上に、P−CVD
法またはRFスパッタ法により5i02゜S i3 N
4.Al120a等からなる絶縁層5が形成される。こ
の絶縁層5の形成に際して、基板1が200″C前後の
温度になるので、導体層40表面荒れが生じ、この導体
層4の表面荒れがそのまま反映して絶縁層5の表面粗度
が20〜lo。P-CVD is applied on the conductor layer 4 formed as described above.
5i02°S i3N by method or RF sputtering method
4. An insulating layer 5 made of Al120a or the like is formed. During the formation of this insulating layer 5, the temperature of the substrate 1 reaches around 200"C, so the surface roughness of the conductor layer 40 occurs, and this surface roughness of the conductor layer 4 is directly reflected, and the surface roughness of the insulating layer 5 increases to 20"C. ~lo.
人になる。Become a person.
次に、塗布型5i02膜6が絶縁層5の上に形成される
。この塗布型5i02膜6は、ケイ素化合物等を有機溶
媒等に溶かしたものをスピナーにより絶縁層5上に塗布
し、その後焼成することにより得られる。この塗布型5
iQ2膜6の厚さはスピンコードの回転数及び溶媒中の
ケイ素化合物の濃度により制御することができ、この塗
布型5i02膜によりPIQ等の有機系材料を用いた場
合と同様に絶縁層5の表面の凹凸が平坦化される。この
塗布型SiO2膜6を絶縁層5上に形成したときの5i
Q2膜6の表面粗度は、絶縁層5の表面粗度が20〜1
00人であるのに対して〜10Å以下である。Next, a coated 5i02 film 6 is formed on the insulating layer 5. This coating type 5i02 film 6 is obtained by applying a solution of a silicon compound or the like in an organic solvent or the like onto the insulating layer 5 using a spinner, and then baking it. This application type 5
The thickness of the iQ2 film 6 can be controlled by the rotational speed of the spin code and the concentration of silicon compound in the solvent, and the thickness of the insulating layer 5 can be controlled by the coating type 5i02 film in the same way as when an organic material such as PIQ is used. Surface irregularities are flattened. 5i when this coated SiO2 film 6 is formed on the insulating layer 5
The surface roughness of the Q2 film 6 is such that the surface roughness of the insulating layer 5 is 20 to 1.
00 people, it is ~10 Å or less.
この塗布型5i02膜6の上にパーマロイ (Ni−F
e合金)蒸着膜からなるMR素子7が形成される。この
場合、絶縁層5の表面の凹凸が塗布型5i02膜6によ
り平坦化され、且つ、塗布型5iQ2膜は下地として膜
質(膜密度、膜組成等)が優れているので、MR素子7
を形成するパーマロイ(Nt−Fe合金)蒸着膜は良好
な磁気特性をもつようになる。Permalloy (Ni-F
An MR element 7 made of a vapor-deposited film (alloy) is formed. In this case, the unevenness on the surface of the insulating layer 5 is flattened by the coated 5i02 film 6, and the coated 5iQ2 film has excellent film quality (film density, film composition, etc.) as a base layer, so the MR element 7
The permalloy (Nt-Fe alloy) vapor-deposited film that forms this has good magnetic properties.
MR素子7は、その膜厚が200〜500人であり、ケ
ミカルエツチングまたはスパッタエツチングにより5〜
20X50〜100μmのストライプ状に加工される。The MR element 7 has a film thickness of 200 to 500 mm, and is etched by chemical etching or sputter etching.
It is processed into stripes of 20×50 to 100 μm.
その後、リード部8が抵抗加熱法、電子ビーム蒸着法あ
るいはRFスバフタ法により形成される。さらに、MR
素子7及びリード部8の上に、P−CVD法またはRF
スパッタ法により絶縁層9が蒸着され、最後に高透磁率
磁性膜からなる上部ヨーク11が形成される。Thereafter, the lead portion 8 is formed by a resistance heating method, an electron beam evaporation method, or an RF buffing method. Furthermore, M.R.
P-CVD method or RF
An insulating layer 9 is deposited by sputtering, and finally an upper yoke 11 made of a high permeability magnetic film is formed.
第2表は本実施例における薄膜磁気ヘッドのMR素子7
を形成するパーマロイ (Ni−Fe合金)蒸着膜の磁
気特性を示す。なお、前述と同様の理由により、基板1
としてN i −Z nフェライトあるいはM n −
Z nフェライトの代わりにガラス(#0211)基板
を用い、絶縁層3を無くし、ガラス(#0211)基板
の上に導体層4を形成し、この導体層4の上にS i
02からなる絶縁層5、この絶縁層5の上に塗布型5i
02膜6、この塗布型S i 02膜6の上にパーマロ
イ (Ni −Fe合金)蒸着膜からなるMR素子7を
形成する。Table 2 shows the MR element 7 of the thin film magnetic head in this embodiment.
This figure shows the magnetic properties of a permalloy (Ni-Fe alloy) vapor-deposited film. Note that for the same reason as mentioned above, the substrate 1
as N i −Z n ferrite or M n −
A glass (#0211) substrate is used instead of Z n ferrite, the insulating layer 3 is eliminated, a conductor layer 4 is formed on the glass (#0211) substrate, and Si
An insulating layer 5 consisting of 02, a coating mold 5i on this insulating layer 5
02 film 6, and an MR element 7 made of a permalloy (Ni--Fe alloy) vapor-deposited film is formed on the coated Si02 film 6.
第2表には比較のために、ガラス(#0211)基板の
上に直接形成されたパーマロイ (Ni−Fe合金)蒸
着膜の磁気特性を示す。For comparison, Table 2 shows the magnetic properties of a permalloy (Ni--Fe alloy) deposited film directly formed on a glass (#0211) substrate.
この第2表から明らかなように、絶縁層50表面粗度が
20〜100人であるのに対して、塗布型5i02膜6
の焼成後の表面粗度は〜1oÅ以下であり、その結果、
パーマロイ(Ni−Fe合金)蒸着膜の磁気特性は、ガ
ラス(#0211)基板に直接形成されたパーマロイ(
Ni−Fe合金)蒸着膜と磁化容易軸方向の抗磁力Hc
、磁化困難軸方向の抗磁力Hch及び異方性磁界Hkが
ともにほぼ同じ値になる。As is clear from Table 2, the surface roughness of the insulating layer 50 is 20 to 100, while the coating type 5i02 film 6
The surface roughness after firing is ~1oÅ or less, and as a result,
The magnetic properties of Permalloy (Ni-Fe alloy) deposited film are similar to those of Permalloy (Ni-Fe alloy) deposited directly on a glass (#0211) substrate.
Ni-Fe alloy) deposited film and coercive force Hc in the direction of easy magnetization axis
, the coercive force Hch and the anisotropic magnetic field Hk in the direction of the hard magnetization axis both have approximately the same value.
MR素子7を形成するパーマロイ (Ni−Fe合金)
蒸着膜が良好な磁気特性をもつためには、MR素子7の
下側の絶縁層を形成する5i02膜の表面粗度の他にS
i 02膜に含まれる不純物、S i 02膜の組成
及び密度等からなる膜質が多大な影響を及ぼす。すなわ
ち、第3表に示すように、5i02膜がその表面粗度が
〜10Å以下であっても緻密性に欠けるIll (P−
CVD法、エツチング速度150〜200人/分、HF
5%水溶液。Permalloy (Ni-Fe alloy) forming the MR element 7
In order for the deposited film to have good magnetic properties, in addition to the surface roughness of the 5i02 film forming the lower insulating layer of the MR element 7, S
The impurities contained in the i 02 film, the composition and density of the Si 02 film, and other film quality have a great influence. That is, as shown in Table 3, even if the 5i02 film has a surface roughness of ~10 Å or less, it lacks density.
CVD method, etching speed 150-200 people/min, HF
5% aqueous solution.
液温45〜50°C)であると、パーマロイ (Ni−
Fe合金)蒸着膜は良好な磁気特性が得られず、ガラス
(#0211)基板上あるいは緻密な5i02膜(RF
スパッタ法、エツチング速度40〜50人/分、HF5
%水溶液、液温45〜50°C)上に形成されたパーマ
ロイ(Ni−Fe合金)蒸着膜の磁気特性と比較して、
磁化容易軸方向の抗磁力Hc及び磁化困難軸方向の抗磁
力Hchがともに大きい値を示す。しかし、上記緻密性
に欠けるS i Q2膜であっても、その上に塗布型5
i02膜を形成することにより、下地としての膜質の向
上が図れ、この塗布型S i 02膜の上に形成された
パーマロイ (Ni−Fe合金)蒸着膜は、ガラス(#
0211)基板上に直接形成されたパーマロイ(Ni−
Fe合金)蒸着、膜とほぼ同程度の良好な磁気特性が得
られる。(liquid temperature 45-50°C), permalloy (Ni-
The deposited film (Fe alloy) does not have good magnetic properties, and it is difficult to obtain good magnetic properties when deposited on a glass (#0211) substrate or on a dense 5i02 film (RF
Sputtering method, etching speed 40-50 people/min, HF5
% aqueous solution, liquid temperature 45-50°C)
The coercive force Hc in the direction of the easy axis of magnetization and the coercive force Hch in the direction of the hard axis of magnetization both exhibit large values. However, even if the Si Q2 film lacks the above-mentioned density, a coating type 5
By forming the i02 film, the quality of the film as a base can be improved.
0211) Permalloy (Ni-
The magnetic properties are almost as good as those of the Fe alloy (Fe alloy) vapor-deposited film.
第3図は他の実施例におけるYMRヘッドの磁気記録媒
体のトラック幅方向に垂直な方向の断面構成を示す。非
磁性基板13の上に下部ヨークを形成するセンダスト(
F e−AI!−3i合金)膜。FIG. 3 shows a cross-sectional configuration of a magnetic recording medium of a YMR head in another embodiment in a direction perpendicular to the track width direction. Sendust (
Fe-AI! -3i alloy) membrane.
パーマロイ (Ni−Fe合金)膜等からなる高透磁率
磁性膜14が電子ビーム蒸着法あるいはスパッタ法によ
り形成される。この高透磁率磁性膜14の上に、上述の
実施例と同様に、導体層4. MR素子7.上部ヨーク
11.絶縁層3.5.9並びに塗布型5i02膜6が形
成される。この場合、高透磁率磁性膜14の表面粗度も
重畳されるが、塗布型5i02膜6の表面粗度は〜10
Å以下になるので、MR素子7を形成するパーマロイ
(Ni−Fe合金)蒸着膜は良好な磁気特性をもつ。A high permeability magnetic film 14 made of a permalloy (Ni--Fe alloy) film or the like is formed by electron beam evaporation or sputtering. On this high permeability magnetic film 14, a conductive layer 4. MR element7. Upper yoke 11. An insulating layer 3.5.9 and a coated 5i02 film 6 are formed. In this case, the surface roughness of the high permeability magnetic film 14 is also superimposed, but the surface roughness of the coating type 5i02 film 6 is ~10
Å or less, the permalloy forming the MR element 7
(Ni-Fe alloy) The deposited film has good magnetic properties.
なお、上記実施例では本発明をYMRヘッドに通用した
場合について説明したが、本発明はこのYMRヘッドに
限定されず、両面シールド型MRヘッド、片面シールド
型MRヘッド、ノンシールド型MRヘッド等においても
塗布型5i02膜を用いることにより良好な磁気特性を
もつパーマロイ (Ni−Fe合金”) 1liiが得
られる。In addition, although the above embodiment describes the case where the present invention is applied to a YMR head, the present invention is not limited to this YMR head, and can be applied to a double-sided shield type MR head, a single-sided shield type MR head, a non-shield type MR head, etc. Permalloy (Ni-Fe alloy) 1lii with good magnetic properties can also be obtained by using a coating type 5i02 film.
〈発明の効果〉
以上詳述したように、本発明においては、絶縁層上に形
成された塗布型5i02膜の上に強磁性薄膜からなるM
R素子を形成するようにしたので、下地絶縁層の表面粗
度及び膜質に影響されない良好な磁気特性を有するMR
素子が得られ、したがって、MR特性(Δρ/ρ特性)
の改善を図ることができ、良好なS/N比を有する薄膜
MRヘッドが得られる。<Effects of the Invention> As described in detail above, in the present invention, an M made of a ferromagnetic thin film is formed on a coated 5i02 film formed on an insulating layer.
Since the R element is formed, the MR has good magnetic properties that are not affected by the surface roughness and film quality of the underlying insulating layer.
The element is obtained, and therefore the MR characteristics (Δρ/ρ characteristics)
Therefore, a thin film MR head having a good S/N ratio can be obtained.
第1図は本発明実施例の断面図、第2図は本発明実施例
の平面図、第3図は本発明の他の実施例の断面図、第4
図は従来例の断面図である。FIG. 1 is a cross-sectional view of an embodiment of the present invention, FIG. 2 is a plan view of an embodiment of the present invention, FIG. 3 is a cross-sectional view of another embodiment of the present invention, and FIG.
The figure is a sectional view of a conventional example.
Claims (1)
方向に印加される信号磁界の変化を電気抵抗変化として
検出する薄膜磁気ヘッドにおいて、絶縁層上に塗布工程
を経て形成されたSiO_2膜上に上記強磁性薄膜が形
成されてなることを特徴とする薄膜磁気ヘッド。(1) In a thin film magnetic head that detects changes in the signal magnetic field applied in the direction of the hard axis of magnetization of a ferromagnetic thin film with uniaxial magnetic anisotropy as changes in electrical resistance, a thin film is formed on an insulating layer through a coating process. A thin film magnetic head characterized in that the above ferromagnetic thin film is formed on a SiO_2 film.
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60091668A JPS61248214A (en) | 1985-04-26 | 1985-04-26 | Thin film magnetic head |
DE19863613619 DE3613619A1 (en) | 1985-04-26 | 1986-04-23 | THICK FILM MAGNETIC HEAD |
GB8610163A GB2175735B (en) | 1985-04-26 | 1986-04-25 | Thin film magnetic head |
US06/855,934 US4789910A (en) | 1985-04-26 | 1986-04-25 | Thin film magnetic head with an application type silicon dioxide film |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60091668A JPS61248214A (en) | 1985-04-26 | 1985-04-26 | Thin film magnetic head |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS61248214A true JPS61248214A (en) | 1986-11-05 |
Family
ID=14032857
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP60091668A Pending JPS61248214A (en) | 1985-04-26 | 1985-04-26 | Thin film magnetic head |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS61248214A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63117308A (en) * | 1986-11-06 | 1988-05-21 | Canon Electronics Inc | Magneto-resistance effect type magnetic head and its manufacture |
JPS63184377A (en) * | 1987-01-27 | 1988-07-29 | Nippon Denso Co Ltd | Ferromagnetic magnetoresistance element |
JPH0521860A (en) * | 1991-07-15 | 1993-01-29 | Sankyo Seiki Mfg Co Ltd | Magnetic sensor |
-
1985
- 1985-04-26 JP JP60091668A patent/JPS61248214A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63117308A (en) * | 1986-11-06 | 1988-05-21 | Canon Electronics Inc | Magneto-resistance effect type magnetic head and its manufacture |
JPS63184377A (en) * | 1987-01-27 | 1988-07-29 | Nippon Denso Co Ltd | Ferromagnetic magnetoresistance element |
JPH0521860A (en) * | 1991-07-15 | 1993-01-29 | Sankyo Seiki Mfg Co Ltd | Magnetic sensor |
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