JPH0714451B2 - Waste gas treatment method - Google Patents
Waste gas treatment methodInfo
- Publication number
- JPH0714451B2 JPH0714451B2 JP63125393A JP12539388A JPH0714451B2 JP H0714451 B2 JPH0714451 B2 JP H0714451B2 JP 63125393 A JP63125393 A JP 63125393A JP 12539388 A JP12539388 A JP 12539388A JP H0714451 B2 JPH0714451 B2 JP H0714451B2
- Authority
- JP
- Japan
- Prior art keywords
- gas
- reaction
- unreacted
- heated
- treatment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Treating Waste Gases (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は廃ガス処理方法に関し、特に気相化学反応もし
くは熱分解反応を用いた反応装置から排出される未反応
ガスを反応除却する方法に関するものである。TECHNICAL FIELD The present invention relates to a waste gas treatment method, and more particularly to a method for reacting and removing unreacted gas discharged from a reactor using a gas phase chemical reaction or a thermal decomposition reaction. It is a thing.
気相化学反応あるいは熱分解反応を用いた反応装置では
導入されたガスを装置内で反応させ、反応生成物および
未反応ガスを外部に排出し廃棄される。In a reaction apparatus using a gas phase chemical reaction or a thermal decomposition reaction, the introduced gas is reacted in the apparatus, and reaction products and unreacted gas are discharged to the outside and discarded.
例えば第３図に示すように、半導体基板表面にシリコン
酸化膜を形成する減圧薄膜形成装置（以下LPCVD装置）
では半導体基板11を400℃に加熱された石英反応管１内
に入れて該半導体基板11を加熱した後、減圧下でシラン
（SiH4）ガス４および酸素（O2）ガス５を導入して気相
化学反応により、半導体基板11上にシリコン酸化膜を形
成する。For example, as shown in FIG. 3, a low pressure thin film forming apparatus (hereinafter LPCVD apparatus) for forming a silicon oxide film on the surface of a semiconductor substrate.
Then, the semiconductor substrate 11 is put into the quartz reaction tube 1 heated to 400 ° C., the semiconductor substrate 11 is heated, and then silane (SiH 4 ) gas 4 and oxygen (O 2 ) gas 5 are introduced under reduced pressure. A silicon oxide film is formed on the semiconductor substrate 11 by a vapor phase chemical reaction.
一方、導入されたシラン（SiH4）ガス４および酸素
（O2）ガス５の反応により生成されたH2またはH2Oガス
の他に未反応のままのシラン（SiH4）ガスおよび酸素
（O2）ガスが反応後の排気ガス２として減圧用に設けら
れたトラップ６及び冷却器７を含む真空ポンプ系20を通
して外部に廃棄される。On the other hand, in addition to H 2 or H 2 O gas generated by the reaction of the introduced silane (SiH 4 ) gas 4 and oxygen (O 2 ) gas 5, unreacted silane (SiH 4 ) gas and oxygen ( O 2 ) gas is discharged to the outside as a post-reaction exhaust gas 2 through a vacuum pump system 20 including a trap 6 and a cooler 7 provided for decompression.
反応に用いられる石英反応管１内にガスが導入された場
合には、ガスそのものの温度は上昇しにくく、低温の反
応になるほど未反応ガスが多量に排出される。When the gas is introduced into the quartz reaction tube 1 used for the reaction, the temperature of the gas itself does not rise easily, and a large amount of unreacted gas is discharged as the reaction becomes lower.
上述した従来の反応装置では反応後の未反応ガスが直接
減圧用の真空ポンプ系に流されるために、真空ポンプ内
でシラン（SiH4）ガスと酸素（O2）ガスが反応を起こ
し、ポンプオイルの劣化、あるいは真空ポンプの劣化を
引き起こし、減圧反応下において圧力の上昇等が起り、
所望の薄膜形成での不良膜形成に至る。また、こうした
真空ポンプ内での反応によりポンプの破損を生じ易く、
安全面でも避けなければならない。In the conventional reactor described above, the unreacted gas after the reaction is directly passed through the vacuum pump system for decompression, so that the silane (SiH 4 ) gas and the oxygen (O 2 ) gas react in the vacuum pump, and the pump It causes deterioration of oil or deterioration of the vacuum pump, and the pressure rises under a depressurized reaction.
A defective film is formed in a desired thin film formation. Moreover, the reaction in the vacuum pump easily causes the pump to be damaged,
It must be avoided in terms of safety.
減圧差を使用しない装置においても、未反応ガスをその
まま廃棄する場合には、例えばシラン（SiH4）ガスの場
合、外部で燃焼することもあり、工場内での局所排気用
ダクト内で燃えた場合は火災等の危険性がある。Even in a device that does not use a pressure difference, when discarding unreacted gas as it is, for example, in the case of silane (SiH 4 ) gas, it may be burned outside, and burned in the duct for local exhaust in the factory. If there is a risk of fire.
本発明の目的は前記課題を解決した廃ガス処理方法を提
供することにある。An object of the present invention is to provide a waste gas treatment method that solves the above problems.
上述した従来の排出ガス廃棄方法に対して本発明は排気
ガス廃棄前に未反応ガスを反応除去するという相違点を
有する。The present invention is different from the above-mentioned conventional exhaust gas disposal method in that unreacted gas is removed by reaction before exhaust gas disposal.
前記目的を達成するため、本発明に係る廃ガス処理方法
は、気相化学反応もしくは熱分解反応に使用された未反
応ガスを反応処理させて廃棄する廃ガス処理方法であっ
て、 前記反応処理に用いられる加熱ガスは、加熱された不活
性ガスであり、 前記反応処理は、前記未反応ガスに前記加熱不活性ガス
を混合し、該加熱不活性ガスにより未反応ガスを化学反
応させて廃棄するものである。In order to achieve the above object, a waste gas treatment method according to the present invention is a waste gas treatment method in which an unreacted gas used in a gas phase chemical reaction or a thermal decomposition reaction is reacted and discarded, and the reaction treatment The heating gas used for is a heated inert gas, and in the reaction treatment, the unreacted gas is mixed with the heated inert gas, and the unreacted gas is chemically reacted by the heated inert gas and discarded. To do.
以下、本発明の実施例を図により説明する。 Embodiments of the present invention will be described below with reference to the drawings.
（実施例１） 第１図は減圧薄膜形成装置（LPCVD装置）を用いてシリ
コン酸化膜を400℃で形成する本発明の実施例を示すも
のである。ヒータ13にて加熱された反応装置の石英反応
管１内に半導体基板11を石英ボート12に保持してセット
し、シラン（SiH4）ガス４及び酸素（O2）ガス５を導入
しつつ基板11上に薄膜を形成する。Example 1 FIG. 1 shows an example of the present invention in which a silicon oxide film is formed at 400 ° C. by using a low pressure thin film forming apparatus (LPCVD apparatus). The semiconductor substrate 11 is held and set in the quartz boat 12 in the quartz reaction tube 1 of the reactor heated by the heater 13, and the silane (SiH 4 ) gas 4 and the oxygen (O 2 ) gas 5 are introduced to the substrate. Form a thin film on 11.
一方、石英反応管１内の残留ガスは排気ガス２として排
出する。この排出された排気ガス２に、メカニカルブー
スタポンプ８の前段に設けられたトラップ６の直前にて
加熱窒素ガス３を導入し混合する。On the other hand, the residual gas in the quartz reaction tube 1 is discharged as exhaust gas 2. The heated nitrogen gas 3 is introduced into and mixed with the discharged exhaust gas 2 immediately before the trap 6 provided in the preceding stage of the mechanical booster pump 8.
加熱窒素ガス３はシラン（SiH4）ガス４と酸素ガス５が
急速に反応し始める350℃以上の温度に加熱して供給す
る。この加熱窒素ガス３により排出された排気ガス２と
トラップ６が加熱され、未反応ガスがこの加熱窒素ガス
３の熱により化学反応してシリコン酸化物としてトラッ
プ６に付着される。反応後の高温ガスはトラップ６の後
段に設けた冷却器７にて冷却する。冷却器７にもトラッ
プ機構を設けておくことにより、更にシリコン酸化物を
除去できる。冷却器７を通ったガス10がメカニカルブー
スタポンプ８及びロータリポンプ９を通して外部に排出
される。反応管１内の圧力はこの加熱窒素ガス３の流量
と反応ガスの流量により制御する。The heated nitrogen gas 3 is supplied after being heated to a temperature of 350 ° C. or higher at which the silane (SiH 4 ) gas 4 and the oxygen gas 5 start to react rapidly. The exhaust gas 2 discharged by the heated nitrogen gas 3 and the trap 6 are heated, and the unreacted gas chemically reacts with the heat of the heated nitrogen gas 3 to be attached to the trap 6 as silicon oxide. The high temperature gas after the reaction is cooled by the cooler 7 provided at the subsequent stage of the trap 6. By providing a trap mechanism also in the cooler 7, silicon oxide can be further removed. The gas 10 passing through the cooler 7 is discharged to the outside through the mechanical booster pump 8 and the rotary pump 9. The pressure in the reaction tube 1 is controlled by the flow rate of the heated nitrogen gas 3 and the flow rate of the reaction gas.
（実施例２） 第２図は本発明の他の実施例を示すものであり、第２図
はトラップのガス導入口に高温ガスの流入口を設けてお
き、排出側を水冷させる方式の処理装置に適用した場合
である。処理装置14の下部には、水冷用のパイプ15があ
り、網目状のステンレス針金16の下部を冷却している。
上部は水冷されておらず、ステンレス針金16の上面に加
熱窒素ガス３の導入口があり、加熱窒素ガス３は導入口
17からの排気ガス２と混合される。この高温の混合ガス
19と、混合ガス19により加熱されたステンレス針金16に
より排気ガス２中の未反応ガスを反応させ、冷却部のス
テンレス針金16に付着させる。高温の混合ガス19は同時
に冷却部で冷却され、排出口18から外部に排出される。
ステンレス針金16は適時に洗浄し再生して使用する。(Embodiment 2) FIG. 2 shows another embodiment of the present invention. FIG. 2 shows a treatment in which a hot gas inlet is provided at the gas inlet of the trap and the discharge side is water-cooled. This is the case when applied to a device. A water-cooling pipe 15 is provided at the lower part of the processing device 14 to cool the lower part of the mesh-shaped stainless wire 16.
The upper part is not water cooled, and there is an inlet for the heated nitrogen gas 3 on the upper surface of the stainless wire 16, and the heated nitrogen gas 3 is an inlet.
It is mixed with exhaust gas 2 from 17. This hot mixed gas
The unreacted gas in the exhaust gas 2 is caused to react with 19 and the stainless wire 16 heated by the mixed gas 19 and attached to the stainless wire 16 in the cooling part. The high temperature mixed gas 19 is simultaneously cooled by the cooling unit and discharged to the outside through the discharge port 18.
The stainless steel wire 16 is washed and regenerated at a proper time for use.
尚、本発明はアルシン（AsH3）を使ったアニール等での
未反応アルシンを高温ガスによる熱分解により、Asとし
て固化，除却する場合にも応用できるものである。The present invention can also be applied to the case where unreacted arsine, such as annealed using arsine (AsH 3 ), is solidified and removed as As by thermal decomposition with a high temperature gas.
以上説明したように本発明によれば、未反応ガスに加熱
された不活性ガスを混入して化学反応による処理を行う
ため、反応処理時に酸化性ガスを用いる場合のような爆
発等の事故を引き起こすことがなく、未反応ガスを化学
反応により除却することができ、これにより、未反応ガ
スをそのまま真空排気系に導かれることがないため、真
空排気系の劣化損傷をなくすことができる効果がある。As described above, according to the present invention, since a heated inert gas is mixed with an unreacted gas to perform a treatment by a chemical reaction, an accident such as an explosion when an oxidizing gas is used during the reaction treatment is prevented. The unreacted gas can be removed by a chemical reaction without causing it, and the unreacted gas is not guided to the vacuum exhaust system as it is. Therefore, there is an effect that deterioration damage of the vacuum exhaust system can be eliminated. is there.
第１図は本発明を用いたLPCVD装置を示す構成概略図、
第２図は本発明を用いた廃ガス処理装置を示す図、第３
図は従来のLPCVD装置を示す構成概略図である。 １……石英反応管、２……排気ガス ３……加熱窒素ガス ４……シラン（SiH4）ガス ５……酸素（O2）ガス、６……トラップ ７……冷却器 ８……メカニカルブースタポンプ ９……ロータリポンプ、11……半導体基板 12……石英ボート、13……ヒータ 14……処理装置、15……水冷用パイプ 16……ステンレス針金、17……導入口 18……排出口、19……混合ガスFIG. 1 is a schematic configuration diagram showing an LPCVD apparatus using the present invention,
FIG. 2 is a diagram showing a waste gas treatment device using the present invention, and FIG.
The figure is a schematic diagram showing the configuration of a conventional LPCVD apparatus. 1 ... Quartz reaction tube, 2 ... Exhaust gas 3 ... Heating nitrogen gas 4 ... Silane (SiH 4 ) gas 5 ... Oxygen (O 2 ) gas, 6 ... Trap 7 ... Cooler 8 ... Mechanical Booster pump 9 …… Rotary pump, 11 …… Semiconductor substrate 12 …… Quartz boat, 13 …… Heater 14 …… Processor, 15 …… Water cooling pipe 16 …… Stainless steel wire, 17 …… Inlet port 18 …… Discharge Exit, 19 ... Mixed gas
Claims (1)
れた未反応ガスを反応処理させて廃棄する廃ガス処理方
法であって、 前記反応処理に用いられる加熱ガスは、加熱された不活
性ガスであり、 前記反応処理は、前記未反応ガスに前記加熱不活性ガス
を混合し、該加熱不活性ガスにより未反応ガスを化学反
応させて廃棄するものであることを特徴とする廃ガス処
理方法。1. A waste gas treatment method in which unreacted gas used in a gas phase chemical reaction or thermal decomposition reaction is reacted and discarded, and the heating gas used in the reaction treatment is a heated inert gas. The waste gas treatment is a gas, and the reaction treatment is a step of mixing the unreacted gas with the heated inert gas, chemically reacting the unreacted gas with the heated inert gas, and discarding the unreacted gas. Method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63125393A JPH0714451B2 (en) | 1988-05-23 | 1988-05-23 | Waste gas treatment method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63125393A JPH0714451B2 (en) | 1988-05-23 | 1988-05-23 | Waste gas treatment method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01293120A JPH01293120A (en) | 1989-11-27 |
| JPH0714451B2 true JPH0714451B2 (en) | 1995-02-22 |
Family
ID=14909028
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63125393A Expired - Fee Related JPH0714451B2 (en) | 1988-05-23 | 1988-05-23 | Waste gas treatment method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0714451B2 (en) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05154334A (en) * | 1991-12-11 | 1993-06-22 | Fujitsu Ltd | Exhaust pump device of semiconductor manufacturing apparatus |
| JPH07222908A (en) * | 1994-02-15 | 1995-08-22 | Sadayoshi Taketsuna | Exhaust gas filtering treatment method of semiconductor manufacturing process |
| US5817575A (en) * | 1996-01-30 | 1998-10-06 | Advanced Micro Devices, Inc. | Prevention of clogging in CVD apparatus |
| US5928426A (en) * | 1996-08-08 | 1999-07-27 | Novellus Systems, Inc. | Method and apparatus for treating exhaust gases from CVD, PECVD or plasma etch reactors |
| GB2413293A (en) * | 2004-04-20 | 2005-10-26 | Boc Group Plc | Method of treating an effluent stream |
| GB0505852D0 (en) | 2005-03-22 | 2005-04-27 | Boc Group Plc | Method of treating a gas stream |
| GB0702837D0 (en) * | 2007-02-14 | 2007-03-28 | Boc Group Plc | Method of treating a gas stream |
| CN115233187B (en) * | 2022-07-22 | 2023-09-08 | 北京北方华创微电子装备有限公司 | Gas treatment device and semiconductor process equipment |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2616884B1 (en) * | 1987-06-19 | 1991-05-10 | Air Liquide | PROCESS FOR THE TREATMENT OF GASEOUS EFFLUENTS FROM THE MANUFACTURE OF ELECTRONIC COMPONENTS AND AN INCINERATION APPARATUS FOR IMPLEMENTING SAME |
-
1988
- 1988-05-23 JP JP63125393A patent/JPH0714451B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH01293120A (en) | 1989-11-27 |
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