JPH0714451B2 - Waste gas treatment method - Google Patents

Waste gas treatment method

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Publication number
JPH0714451B2
JPH0714451B2 JP63125393A JP12539388A JPH0714451B2 JP H0714451 B2 JPH0714451 B2 JP H0714451B2 JP 63125393 A JP63125393 A JP 63125393A JP 12539388 A JP12539388 A JP 12539388A JP H0714451 B2 JPH0714451 B2 JP H0714451B2
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gas
reaction
unreacted
heating
waste gas
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JP63125393A
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Japanese (ja)
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JPH01293120A (en
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雅夫 島田
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日本電気株式会社
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Publication of JPH01293120A publication Critical patent/JPH01293120A/en
Publication of JPH0714451B2 publication Critical patent/JPH0714451B2/en
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Application status is Expired - Fee Related legal-status Critical

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Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は廃ガス処理方法に関し、特に気相化学反応もしくは熱分解反応を用いた反応装置から排出される未反応ガスを反応除却する方法に関するものである。 DETAILED DESCRIPTION OF THE INVENTION The present invention [relates] relates waste gas processing method, and a method of reacting retirement unreacted gas particularly discharged from the reactor using a gas-phase chemical reaction or thermal decomposition reaction it is intended.

〔従来の技術〕 [Prior art]

気相化学反応あるいは熱分解反応を用いた反応装置では導入されたガスを装置内で反応させ、反応生成物および未反応ガスを外部に排出し廃棄される。 The reaction apparatus using a gas-phase chemical reaction or thermal decomposition reaction is reacted in a device the introduced gas, the reaction products and to discharge unreacted gas to the outside are discarded.

例えば第3図に示すように、半導体基板表面にシリコン酸化膜を形成する減圧薄膜形成装置(以下LPCVD装置) For example, as shown in FIG. 3, the vacuum thin film forming apparatus for forming a silicon oxide film on the semiconductor substrate surface (hereinafter LPCVD apparatus)
では半導体基板11を400℃に加熱された石英反応管1内に入れて該半導体基板11を加熱した後、減圧下でシラン(SiH 4 )ガス4および酸素(O 2 )ガス5を導入して気相化学反応により、半導体基板11上にシリコン酸化膜を形成する。 In After heating the semiconductor substrate 11 placed on the semiconductor substrate 11 through the quartz reaction tube 1 which is heated to 400 ° C., silane under vacuum (SiH 4) gas 4 and oxygen (O 2) by introducing a gas 5 the chemical vapor to form a silicon oxide film on the semiconductor substrate 11.

一方、導入されたシラン(SiH 4 )ガス4および酸素(O 2 )ガス5の反応により生成されたH 2またはH 2 Oガスの他に未反応のままのシラン(SiH 4 )ガスおよび酸素(O 2 )ガスが反応後の排気ガス2として減圧用に設けられたトラップ6及び冷却器7を含む真空ポンプ系20を通して外部に廃棄される。 On the other hand, the introduced silane (SiH 4) gas 4 and oxygen (O 2) remains unreacted silane to other H 2 or the H 2 O gas generated by the reaction of gas 5 (SiH 4) gas and oxygen ( O 2) gas is discarded to the outside through the vacuum pumping system 20 comprising a trap 6 and a condenser 7 is provided for the vacuum as exhaust gas 2 after the reaction.

反応に用いられる石英反応管1内にガスが導入された場合には、ガスそのものの温度は上昇しにくく、低温の反応になるほど未反応ガスが多量に排出される。 If the gas is introduced into the quartz reaction tube 1 used for the reaction, the temperature of the gas itself is hard to rise, the unreacted gas is heavily discharged as temperature of the reaction.

〔発明が解決しようとする課題〕 [Problems that the Invention is to Solve]

上述した従来の反応装置では反応後の未反応ガスが直接減圧用の真空ポンプ系に流されるために、真空ポンプ内でシラン(SiH 4 )ガスと酸素(O 2 )ガスが反応を起こし、ポンプオイルの劣化、あるいは真空ポンプの劣化を引き起こし、減圧反応下において圧力の上昇等が起り、 To unreacted gas after the reaction in the conventional reaction apparatus described above flows through the vacuum pump system for direct pressure reduction, silane in a vacuum pump (SiH 4) gas and oxygen (O 2) causes a gas reaction, the pump deterioration of the oil, or cause deterioration of the vacuum pump, occur rises like the pressure in the reduced pressure reaction,
所望の薄膜形成での不良膜形成に至る。 Leading to poor film formation in the desired thin film formation. また、こうした真空ポンプ内での反応によりポンプの破損を生じ易く、 Further, they tend to cause damage to the pump by reaction in such a vacuum pump,
安全面でも避けなければならない。 It must be avoided even in terms of safety.

減圧差を使用しない装置においても、未反応ガスをそのまま廃棄する場合には、例えばシラン(SiH 4 )ガスの場合、外部で燃焼することもあり、工場内での局所排気用ダクト内で燃えた場合は火災等の危険性がある。 Even in devices that do not use the vacuum difference, when discarding the unreacted gas as it is, for example, in the case of silane (SiH 4) gas, it might be burned in an external, burned in a local exhaust duct in the factory If there is a risk such as fire.

本発明の目的は前記課題を解決した廃ガス処理方法を提供することにある。 An object of the present invention is to provide a waste gas treatment method which solves the above problems.

〔発明の従来技術に対する相違点〕 [Differences from the prior art INVENTION

上述した従来の排出ガス廃棄方法に対して本発明は排気ガス廃棄前に未反応ガスを反応除去するという相違点を有する。 The present invention relative to conventional exhaust gas disposal methods described above have a difference that the reaction remove unreacted gas before the exhaust gas disposal.

〔課題を解決するための手段〕 [Means for Solving the Problems]

前記目的を達成するため、本発明に係る廃ガス処理方法は、気相化学反応もしくは熱分解反応に使用された未反応ガスを反応処理させて廃棄する廃ガス処理方法であって、 前記反応処理に用いられる加熱ガスは、加熱された不活性ガスであり、 前記反応処理は、前記未反応ガスに前記加熱不活性ガスを混合し、該加熱不活性ガスにより未反応ガスを化学反応させて廃棄するものである。 To achieve the above object, a waste gas treatment method according to the present invention, the unreacted gas which has been used in chemical vapor reaction or thermal decomposition reaction a waste gas processing method for disposal by reaction treatment, the reaction treatment the heating gas for use in a heated inert gas, the reaction process, the mixing the heated inert gas into the unreacted gas, and the unreacted gas are chemically reacted by heating the inert gas waste it is intended to.

〔実施例〕 〔Example〕

以下、本発明の実施例を図により説明する。 Hereinafter will be described with reference to FIG embodiments of the present invention.

(実施例1) 第1図は減圧薄膜形成装置(LPCVD装置)を用いてシリコン酸化膜を400℃で形成する本発明の実施例を示すものである。 (Example 1) Figure 1 shows a preferred embodiment of the present invention to form at 400 ° C. The silicon oxide film using a vacuum thin film forming apparatus (LPCVD apparatus). ヒータ13にて加熱された反応装置の石英反応管1内に半導体基板11を石英ボート12に保持してセットし、シラン(SiH 4 )ガス4及び酸素(O 2 )ガス5を導入しつつ基板11上に薄膜を形成する。 The semiconductor substrate 11 in a quartz reaction tube 1 of the heated reactor at a heater 13 is set and held in a quartz boat 12, silane (SiH 4) gas 4 and oxygen (O 2) while introducing gas 5 substrate 11 to form a thin film on.

一方、石英反応管1内の残留ガスは排気ガス2として排出する。 On the other hand, the residual gas in the quartz reaction tube 1 is discharged as exhaust gas 2. この排出された排気ガス2に、メカニカルブースタポンプ8の前段に設けられたトラップ6の直前にて加熱窒素ガス3を導入し混合する。 This exhaust gas discharged 2, it is mixed by introducing heated nitrogen gas 3 at just before the trap 6 which is provided before the mechanical booster pump 8.

加熱窒素ガス3はシラン(SiH 4 )ガス4と酸素ガス5が急速に反応し始める350℃以上の温度に加熱して供給する。 Heating the nitrogen gas 3 is silane supplies heated to (SiH 4) gas 4 and 350 ° C. or higher temperatures oxygen gas 5 begins to react rapidly. この加熱窒素ガス3により排出された排気ガス2とトラップ6が加熱され、未反応ガスがこの加熱窒素ガス3の熱により化学反応してシリコン酸化物としてトラップ6に付着される。 The exhaust gas 2 and trap 6 discharged by heating the nitrogen gas 3 is heated, the unreacted gas is attached to the trap 6 as silicon oxide by a chemical reaction by the heat of the heating nitrogen gas 3. 反応後の高温ガスはトラップ6の後段に設けた冷却器7にて冷却する。 Hot gas after the reaction is cooled in cooler 7 provided downstream of the trap 6. 冷却器7にもトラップ機構を設けておくことにより、更にシリコン酸化物を除去できる。 By providing a trap mechanism to cooler 7 can further remove the silicon oxide. 冷却器7を通ったガス10がメカニカルブースタポンプ8及びロータリポンプ9を通して外部に排出される。 Gas 10 passing through the cooler 7 is discharged to the outside through a mechanical booster pump 8 and the rotary pump 9. 反応管1内の圧力はこの加熱窒素ガス3の流量と反応ガスの流量により制御する。 The pressure in the reaction tube 1 is controlled by the flow rate of the flow rate with the reaction gas in the heating of nitrogen gas 3.

(実施例2) 第2図は本発明の他の実施例を示すものであり、第2図はトラップのガス導入口に高温ガスの流入口を設けておき、排出側を水冷させる方式の処理装置に適用した場合である。 (Example 2) Figure 2 is illustrates another embodiment of the present invention, FIG. 2 may be provided an inlet of hot gas to the gas inlet of the trap, the processing method for water-cooling the discharge side it is applied to a device. 処理装置14の下部には、水冷用のパイプ15があり、網目状のステンレス針金16の下部を冷却している。 At the bottom of the processing apparatus 14, there is a pipe 15 for water-cooling, to cool the lower part of the mesh of stainless steel wire 16.
上部は水冷されておらず、ステンレス針金16の上面に加熱窒素ガス3の導入口があり、加熱窒素ガス3は導入口 The top has not been water-cooled, there is inlet heating nitrogen gas 3 to the upper surface of the stainless steel wire 16, heating the nitrogen gas 3 inlet
17からの排気ガス2と混合される。 It is mixed with the exhaust gas 2 from 17. この高温の混合ガス A mixed gas of the high temperature
19と、混合ガス19により加熱されたステンレス針金16により排気ガス2中の未反応ガスを反応させ、冷却部のステンレス針金16に付着させる。 19, the stainless steel wire 16 which is heated by the mixed gas 19 is reacted with unreacted gas in the exhaust gas 2, it is attached to a stainless wire 16 of the cooling unit. 高温の混合ガス19は同時に冷却部で冷却され、排出口18から外部に排出される。 Mixed gas 19 of a high temperature is cooled by the cooling unit at the same time, it is discharged from the discharge port 18 to the outside.
ステンレス針金16は適時に洗浄し再生して使用する。 Stainless wire 16 is used to play washed in a timely manner.

尚、本発明はアルシン(AsH 3 )を使ったアニール等での未反応アルシンを高温ガスによる熱分解により、Asとして固化,除却する場合にも応用できるものである。 The present invention is by unreacted arsine thermal degradation by the hot gases in such annealing using arsine (AsH 3), it solidified as As, in which can be applied in the case of retirement.

〔発明の効果〕 〔Effect of the invention〕

以上説明したように本発明によれば、未反応ガスに加熱された不活性ガスを混入して化学反応による処理を行うため、反応処理時に酸化性ガスを用いる場合のような爆発等の事故を引き起こすことがなく、未反応ガスを化学反応により除却することができ、これにより、未反応ガスをそのまま真空排気系に導かれることがないため、真空排気系の劣化損傷をなくすことができる効果がある。 According to the present invention described above, since the mixed inert gas heated in the unreacted gas performs processing by chemical reaction, an accident such as explosion, such as the case of using an oxidizing gas during the reaction process without causing the unreacted gas can be retired by chemical reaction, thereby, since no guided unreacted gas directly into the vacuum exhaust system, the effect can be eliminated deterioration damage evacuation system is there.

【図面の簡単な説明】 BRIEF DESCRIPTION OF THE DRAWINGS

第1図は本発明を用いたLPCVD装置を示す構成概略図、 Figure 1 is a schematic configuration diagram showing an LPCVD apparatus using the present invention,
第2図は本発明を用いた廃ガス処理装置を示す図、第3 Figure 2 is a diagram showing a waste gas processing apparatus using the present invention, the third
図は従来のLPCVD装置を示す構成概略図である。 Figure is a schematic structural diagram showing a conventional LPCVD apparatus. 1……石英反応管、2……排気ガス 3……加熱窒素ガス 4……シラン(SiH 4 )ガス 5……酸素(O 2 )ガス、6……トラップ 7……冷却器 8……メカニカルブースタポンプ 9……ロータリポンプ、11……半導体基板 12……石英ボート、13……ヒータ 14……処理装置、15……水冷用パイプ 16……ステンレス針金、17……導入口 18……排出口、19……混合ガス 1 ...... quartz reaction tube, 2 ...... exhaust gas 3 ...... heated nitrogen gas 4 ...... silane (SiH 4) gas 5 ...... oxygen gas (O 2), 6 ...... trap 7 ...... condenser 8 ...... Mechanical booster pump 9 ...... rotary pump, 11 ...... semiconductor substrate 12 ...... quartz boat, 13 ...... heater 14 ...... processor, 15 ...... water cooling pipe 16 ...... stainless wire, 17 ...... inlet 18 ...... discharge exit, 19 ...... mixed gas

Claims (1)

    【特許請求の範囲】 [The claims]
  1. 【請求項1】気相化学反応もしくは熱分解反応に使用された未反応ガスを反応処理させて廃棄する廃ガス処理方法であって、 前記反応処理に用いられる加熱ガスは、加熱された不活性ガスであり、 前記反応処理は、前記未反応ガスに前記加熱不活性ガスを混合し、該加熱不活性ガスにより未反応ガスを化学反応させて廃棄するものであることを特徴とする廃ガス処理方法。 1. A waste gas treatment method of disposal unreacted gas used for the gas-phase chemical reaction or thermal decomposition reaction is reacted processing, heating gas used in the reaction process, heated inert a gas, said reaction process, the mixing the heated inert gas into the unreacted gas, waste gas treatment, characterized in that it is intended to discard the unreacted gas are chemically reacted by heating an inert gas Method.
JP63125393A 1988-05-23 1988-05-23 Waste gas treatment method Expired - Fee Related JPH0714451B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63125393A JPH0714451B2 (en) 1988-05-23 1988-05-23 Waste gas treatment method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63125393A JPH0714451B2 (en) 1988-05-23 1988-05-23 Waste gas treatment method

Publications (2)

Publication Number Publication Date
JPH01293120A JPH01293120A (en) 1989-11-27
JPH0714451B2 true JPH0714451B2 (en) 1995-02-22

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JP63125393A Expired - Fee Related JPH0714451B2 (en) 1988-05-23 1988-05-23 Waste gas treatment method

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Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05154334A (en) * 1991-12-11 1993-06-22 Fujitsu Ltd Exhaust pump device of semiconductor manufacturing apparatus
JPH07222908A (en) * 1994-02-15 1995-08-22 Sadayoshi Taketsuna Exhaust gas filtering treatment method of semiconductor manufacturing process
US5817575A (en) * 1996-01-30 1998-10-06 Advanced Micro Devices, Inc. Prevention of clogging in CVD apparatus
US5928426A (en) * 1996-08-08 1999-07-27 Novellus Systems, Inc. Method and apparatus for treating exhaust gases from CVD, PECVD or plasma etch reactors
GB2413293A (en) * 2004-04-20 2005-10-26 Boc Group Plc Method of treating an effluent stream
GB0505852D0 (en) * 2005-03-22 2005-04-27 Boc Group Plc Method of treating a gas stream
GB0702837D0 (en) * 2007-02-14 2007-03-28 Boc Group Plc Method of treating a gas stream

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2616884B1 (en) * 1987-06-19 1991-05-10 Air Liquide Method of treatment of gaseous effluents from the manufacture of electronic components and incineration apparatus for its implementation

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