JPH0228921A - Device for removing resist - Google Patents
Device for removing resistInfo
- Publication number
- JPH0228921A JPH0228921A JP17957288A JP17957288A JPH0228921A JP H0228921 A JPH0228921 A JP H0228921A JP 17957288 A JP17957288 A JP 17957288A JP 17957288 A JP17957288 A JP 17957288A JP H0228921 A JPH0228921 A JP H0228921A
- Authority
- JP
- Japan
- Prior art keywords
- resist
- sample
- plate
- hot plate
- ozone
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000007789 gas Substances 0.000 claims abstract description 19
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims abstract description 17
- 239000001301 oxygen Substances 0.000 claims abstract description 11
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 11
- 238000001816 cooling Methods 0.000 claims abstract description 4
- 238000010438 heat treatment Methods 0.000 claims description 4
- 239000000498 cooling water Substances 0.000 abstract description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 3
- 229910001385 heavy metal Inorganic materials 0.000 abstract description 3
- 230000005855 radiation Effects 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 210000003127 knee Anatomy 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Drying Of Semiconductors (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本話明は、半導体デバイスへ与えるダメージが少なく高
速でレジストを除去することの可能なレジスト除去装置
に関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a resist removal apparatus capable of removing resist at high speed with little damage to semiconductor devices.
従来の技術
従来、この種のレジスト除去装置は第2図に示すような
構成であった。第2図において、1は試料テーブル、2
は排気ボート、3はチャンバーカバー、4は反応ガスで
あるオゾンを導入するだめのガス導入口、8はレジスト
性きの試料、11は試料処理室、10は試料テーブルを
加熱するだめのヒーターで、3001::に加熱される
。オゾンガスは、オゾン発生機に02ガスを導入して得
られ、o2ガヌ中のオゾン濃度は約1Q%であり、o2
ガスとオゾンガスの総流量は600cc−7Ain で
ある。2. Description of the Related Art Conventionally, this type of resist removing apparatus has had a configuration as shown in FIG. In Figure 2, 1 is the sample table, 2
is an exhaust boat, 3 is a chamber cover, 4 is a gas inlet for introducing ozone which is a reaction gas, 8 is a resist sample, 11 is a sample processing chamber, and 10 is a heater for heating a sample table. , 3001::. Ozone gas is obtained by introducing 02 gas into an ozone generator, and the ozone concentration in the o2 gas is about 1Q%.
The total flow rate of gas and ozone gas is 600cc-7Ain.
試料処理室に導入されたオゾンは加熱された試料上に到
達すると酸素ラジカルと酸素分子に分解される。酸素ラ
ジカルはレジストと反応してレジストを炭化水素又は水
等の揮発性化合物に分解し除去するというものであった
。Ozone introduced into the sample processing chamber is decomposed into oxygen radicals and oxygen molecules when it reaches the heated sample. Oxygen radicals react with the resist, decomposing the resist into volatile compounds such as hydrocarbons or water, and removing the resist.
発明が解決しようとする課題
このような構成では、レジストが付着した状態で試料が
高温になるために、半導体デバイスにダメージがはいり
やすいという欠点があった。Problems to be Solved by the Invention This configuration has the drawback that the semiconductor device is likely to be damaged because the sample reaches a high temperature with the resist attached.
課題を解決するための手段
かかる課題全解決するために本発明は、試料全冷却しな
がら、試料の上部に設置された複数個の穴を有するホッ
トプレートでオゾンを酸素分子と酸素ラジカルに分解し
、かつホットプレートからの輻射熱でレジストを高速に
除去するものである。Means for Solving the Problems In order to solve all the problems, the present invention decomposes ozone into oxygen molecules and oxygen radicals using a hot plate with a plurality of holes installed above the sample while completely cooling the sample. , and the resist is removed at high speed using radiant heat from the hot plate.
作 用
このようなレジスト除去装置を用いれば、試料の温度を
上昇させないでレジストを除去できるので半導体デバイ
スにダメージを与えないで、ホラ)7’L/−トからの
輻射熱によってレジストを高速に除去でき、さらにホッ
トプレートに形成した複数の穴からラジカルが拡散され
るので均一な速度でレジストを除去できることになる。Function: If such a resist removal device is used, the resist can be removed without increasing the temperature of the sample, so the resist can be removed at high speed without damaging the semiconductor device. Furthermore, since the radicals are diffused through the plurality of holes formed in the hot plate, the resist can be removed at a uniform rate.
実施例
本発明によるレジスト除去装置の実施例を第1図に示す
。第1図において、1はアルミニウム製の試料〉−プル
で20℃以下に冷却水で冷却されており、2は反応生成
物を排気するための排気ポート、3は試料室を形成する
チャンバーカバー4はオゾンガスを導入するためのガス
導入口、6は直径2〜10jlIIIの複数個の穴を有
し、かつヒーターを内蔵し、約400℃に加熱されたホ
ットプレート、6はホットプレートを支持し、かつオゾ
ンガスを拡散するための支持部、7はガス吹き出し口、
8は試料、9は試料台を冷却するだめの冷却水穴である
。Embodiment An embodiment of the resist removing apparatus according to the present invention is shown in FIG. In Fig. 1, 1 is an aluminum sample pull that is cooled to below 20°C with cooling water, 2 is an exhaust port for exhausting reaction products, and 3 is a chamber cover 4 forming a sample chamber. 6 is a gas inlet for introducing ozone gas, 6 is a hot plate having a plurality of holes with a diameter of 2 to 10 JlIII, and has a built-in heater and heated to about 400°C; 6 supports the hot plate; and a support part for diffusing ozone gas; 7 is a gas outlet;
8 is a sample, and 9 is a cooling water hole for cooling the sample stage.
オゾン発生機によって生成した約10%の濃度のオゾン
ガスをガス導入口から導入し、約400℃に加熱したホ
ットプレートにオゾンが接触することによシ熱分解して
酸素ラジカルが生成する。Ozone gas with a concentration of about 10% generated by an ozone generator is introduced from a gas inlet, and when the ozone comes into contact with a hot plate heated to about 400° C., it is thermally decomposed and oxygen radicals are generated.
前記酸素ラジカルがガス吹き出しロアよシ拡散し試料8
に到達し、レジストと反応する。レジストとオゾンの反
応を高めるために、ホットプレートと試料の距離は3〜
5闘とし、ホットプレートからの輻射熱によってレジス
トを加熱し、レジストの除去速度を向上させるとともに
、直径3〜5M11の複数個の穴を前記ホットプレート
に設けることによって均一にレジストを除去することが
できる。The oxygen radicals diffused through the gas blowing lower part, resulting in sample 8.
reach and react with the resist. In order to enhance the reaction between the resist and ozone, the distance between the hot plate and the sample should be 3~3.
By heating the resist with radiant heat from a hot plate, the resist removal speed is improved, and by providing a plurality of holes with a diameter of 3 to 5 M11 in the hot plate, the resist can be removed uniformly. .
試料テーブル1には冷却水穴9を形成し、20℃以下の
冷却水を流すことによシ試料の温度を上昇させないので
、レジスト中に含まれる重金属等により試料を汚染する
ことなくレジストを除去することができる。A cooling water hole 9 is formed in the sample table 1, and cooling water of 20°C or lower is flowed through it to prevent the temperature of the sample from rising, allowing the resist to be removed without contaminating the sample with heavy metals contained in the resist. can do.
発明の効果
本発明によれば、半導体デバイスに重金属汚染等による
ダメージを低減し、さらに高速かつ均一にレジストを除
去することができる。Effects of the Invention According to the present invention, it is possible to reduce damage to semiconductor devices due to heavy metal contamination and the like, and to remove resist more quickly and uniformly.
第1図は本発明の一実施例による装置の断面図、第2図
は従来の装置の断面図である。
1・・・・・・試料テーブル、2・・・・・・排気ポー
ト、3・・・・・・チャンバーカバー、4・・・・・・
ガス導入口、6・旧・・支持部、“・6・・・・・・ホ
ットプレート、7・・・・・・ガス吹キ出し口、8・・
・・・・試料、9・・・・・・冷却水穴、1o・・・・
・・ヒーター、11・・・・・・試料処理室。
代理人の氏名 弁理士 粟 野 重 孝 ほか1名第
図
(・−8氏r1トブル
1!−40気に一卜
3−−f?シ11+−カッで−
7−−−γスXと出しD
8・−試料
4m−4ニー11
+02FIG. 1 is a sectional view of a device according to an embodiment of the present invention, and FIG. 2 is a sectional view of a conventional device. 1...Sample table, 2...Exhaust port, 3...Chamber cover, 4...
Gas inlet, 6. Old support part, 6. Hot plate, 7. Gas outlet, 8.
...Sample, 9...Cooling water hole, 1o...
...Heater, 11...Sample processing chamber. Name of agent: Patent attorney Shigetaka Awano and one other person Figure (・-8 Mr. r1 Toble 1!-40 ki 3--f?si 11+-kad-7---γs D 8・-Sample 4m-4 Knee 11 +02
Claims (1)
た試料の上部に支持され複数個の穴を有する熱板とをそ
なえ、前記試料は前記熱板からの輻射熱によって均一に
加熱されるとともに、前記試料台は冷却機構をそなえ、
前記導入口から導入された前記オゾンが前記熱板との熱
反応によって分解されて生じた酸素ラジカルが前記熱板
の穴を通して前記試料に供給されることを特徴とするレ
ジスト除去装置。It is equipped with an inlet for gas containing ozone and a heating plate having a plurality of holes supported above the sample placed on the surface of the sample stage, and the sample is uniformly heated by radiant heat from the heating plate. In addition, the sample stage is equipped with a cooling mechanism,
A resist removing apparatus characterized in that the ozone introduced from the inlet is decomposed by a thermal reaction with the hot plate, and oxygen radicals generated are supplied to the sample through holes in the hot plate.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17957288A JPH0228921A (en) | 1988-07-19 | 1988-07-19 | Device for removing resist |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17957288A JPH0228921A (en) | 1988-07-19 | 1988-07-19 | Device for removing resist |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH0228921A true JPH0228921A (en) | 1990-01-31 |
Family
ID=16068085
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP17957288A Pending JPH0228921A (en) | 1988-07-19 | 1988-07-19 | Device for removing resist |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0228921A (en) |
-
1988
- 1988-07-19 JP JP17957288A patent/JPH0228921A/en active Pending
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