JPH07130778A - Apparatus and method for manufacture of semiconductor device - Google Patents

Abstract

PURPOSE:To obtain a low-profile semiconductor device easily by a method wherein a pre-heating unit in which a lead frame is pre-heated, a dipping bath and a fluid state unit in which powder resin is stored and a conveying unit are provided. CONSTITUTION:Semiconductor chips 19, islands 20 on which the semiconductor chips 19 are mounted, resin parts in which the semiconductor chips 19 are sealed and leads 21 connected to the semiconductor chips 19 are provided. In the manufacturing apparatus of semiconductor devices like these, a pre-heating unit 12 in which a lead frame 18 on which a plurality of sets of the parts corresponding to the islands 20 and the leads 21 are formed is pre-heated to a temperature not lower than the melting temperature of powder resin 33 of which the resin parts are to be made is provided. Further, a dipping bath 13 in which the powder resin 33 is stored and a fluid state unit in which the fluid powder resin is stored are provided. Moreover, a conveying unit 17 which transfers the pre- heated lead frame 18 into the dipping bath 13 to melt the powder resin 33 to form the resin parts and carries out the lead frame 18 on which the resin parts are formed from the dipping bath 13 is provided.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION The present invention relates to a lead frame, for example.
The present invention relates to a semiconductor manufacturing apparatus and a method for manufacturing a semiconductor device, in which a semiconductor element mounted on a wafer is resin-sealed.

[0002]

2. Description of the Related Art Generally, in a semiconductor device 1 as shown in FIG. 16, a semiconductor element 3 is bonded to a metal island 2 and a package 4 seals them. The material of the package 4 is epoxy resin, and transfer molding is adopted as the molding method of the package 4.

A large number (only two are shown) of leads 5 project from the package 4, and these leads 5 are formed into a gull-wing type. The lead 5 is punched from the lead frame together with the island 2. Further, the electrodes (not shown) of the semiconductor element 3 and the leads 5 are electrically connected by the bonding wires 8. Such a structure has high reliability, and
It is adopted in many kinds of semiconductor devices such as a bipolar type IC and a bipolar type IC.

[0004]

By the way, in recent years, the semiconductor element 3 has been highly integrated and speeded up, and the semiconductor device 1 has been highly densely packaged, and many techniques for heat dissipation and thinning have been proposed. Has been done. In particular, for ultra-ultra LSIs, bipolar ICs, QFPs (Quad Flat Packages), and the like, it is an important issue to deal with a large area, a large number of pins, and high heat generation. Then, there is an urgent need to develop a technology for promoting low thermal resistance and thinning (1 mm or less).

Further, when the structure shown in FIG. 16 is adopted in a thin semiconductor device, a resin mold is required to have a precisely shaped mold and sealing equipment, and many manufacturing steps.
That is, since the work of designing, manufacturing, and adjusting the mold is performed and the molding device and the evaluation device are used, it is difficult to manufacture the package and the manufacturing equipment is complicated. Further, in order to accurately control the thickness of the package 4, the resin is required to have special characteristics.

Further, as the thickness of the package 4 is reduced, it becomes difficult for the molten resin to flow during transfer molding, and it is difficult to fill the resin into the cavity. Then, when the resin is not sufficiently filled, the resin is entrained with air to cure without being filled, and bubbles are generated in the package 4. Also,
The package is likely to deteriorate due to the heat generated by the semiconductor element itself.

Further, when a plurality of packages 4 are molded at the same time, it is more difficult to fill the resin because the resin must be uniformly supplied to the plurality of cavities. An object of the present invention is to provide a manufacturing apparatus and a manufacturing method capable of easily manufacturing a thin semiconductor device.

[0008]

In order to achieve the above object, the invention of claim 1 is directed to a semiconductor element, an island on which the semiconductor element is mounted, a resin portion for sealing the semiconductor element, and one end. In a semiconductor device manufacturing apparatus having a lead projecting from a resin portion and the other end electrically connected to a semiconductor element.
Preheating section for preheating at least the melting temperature of the powder resin forming the resin portion, in which a plurality of sets of portions corresponding to the cords are formed, a dipping tank containing the powder resin, and the powder resin And a fluidized part that is stored in a fluidized state and a preheated lead frame are carried into a dipping tank from a preheating furnace to melt the powdered resin to form a resinous part, and the resinous part is formed. An apparatus for manufacturing a semiconductor device is provided with a carrying section for carrying out the lead frame from the dipping tank.

The invention of claim 2 is a semiconductor device,
In a method of manufacturing a semiconductor device having an island on which the semiconductor element is mounted, a resin portion for sealing the semiconductor element, and a lead having one end protruding from the resin portion and the other end electrically connected to the semiconductor element. A masking step of masking a lead frame, which has a plate-like shape and a plurality of sets of portions corresponding to islands and leads, excluding a portion where a resin portion is formed, and at least a lead frame. The preheating step of preheating to the melting temperature of the powder resin to be the resin portion, and the lead frame is dipped in the fluidized powder resin to adhere the powder resin to the lead frame to remove the resin portion. A method of manufacturing a semiconductor device, which comprises a fluidized dipping step of forming.

According to a sixth aspect of the present invention, a semiconductor element, an island on which the semiconductor element is mounted, a resin portion for sealing the semiconductor element, one end protruding from the resin portion and the other end electrically connected to the semiconductor element. In a manufacturing apparatus of a semiconductor device having a connected lead, a plurality of sets corresponding to an upper die and an upper die and corresponding to islands and leads are formed. A die having a lower die for sandwiching a plate-shaped lead frame with an upper die and provided with a plurality of cavities corresponding to the resin portion; and a powder resin supply means for supplying powder resin to the cavities, An apparatus for manufacturing a semiconductor device is provided with a vibrating means for vibrating a die to flow the powder resin in the cavity and a heating means for heating the powder resin in the cavity.

Further, according to the invention of claim 11, a semiconductor element, an island on which the semiconductor element is mounted, a resin portion for sealing the semiconductor element, one end protruding from the resin portion and the other end electrically connected to the semiconductor element. In the method of manufacturing a semiconductor device having a lead connected to the first step, a first step of supplying the powder resin to a cavity having a shape corresponding to the resin portion, and a step of heating the powder resin while flowing it And a second step of shaping into a shape. And these inventions made it possible to easily manufacture a thin semiconductor device.

[0012]

Embodiments of the present invention will be described below with reference to FIGS. FIG. 1 shows a first embodiment of the present invention, in which reference numeral 11 is a semiconductor device manufacturing apparatus. The manufacturing apparatus 11 includes a preheating furnace 1 as a preheating unit.
2, a fluidized immersion tank 13 as an immersion tank, a post-heating furnace 14, a cooling unit 15, and a lead molding machine 16 are provided. And these are sequentially connected via the conveyance part 17.

Of these, the transport unit 17 directs the lead frame 18 as shown in FIG. 2 horizontally and transports it in line along the rail. Further, the transport section 17 is a lead frame 1
8 is stopped at an arbitrary position for a predetermined time. As the conveying unit, various general ones such as a conveyor type and a roller type can be adopted.

The lead frame 18 is made of metal. Further, a plurality of (here, five) semiconductor elements 19 are bonded to the lead frame 18, and these semiconductor elements 1
9 are arranged at substantially equal intervals along the longitudinal direction of the lead frame 18. As the lead frame 18, various general ones can be adopted.

The lead frame 18 is integrally formed with five square islands 20 and a large number of leads 21, and the leads 21 are arranged around the island 20. Further, the leads 21 are arranged in a line for each piece of the island 20. Further, as shown in FIG. 5A, each semiconductor element 19 is bonded to the island 20 with an adhesive 22, and the electrode (not shown) of the semiconductor element 19 is re-bonded with a bonding wire (gold wire) 23. -It is connected to the power source 21 so that it can be energized.

A metal heat dissipation plate 24 is bonded to the plate surface of the island 20 opposite to the semiconductor element 19. The heat dissipation plate 24 is made of, for example, Al, Cu, or Fe.
A material having high thermal conductivity such as a metallic material of the system is adopted, and the heat dissipation plate 24 reduces the thermal resistance of the semiconductor element 19.

A masking material 25 is attached to the lead 21 as shown in FIG. 5 (a). The masking material 25 is made of a heat-resistant material, and covers most of the lead 21 while leaving the base end of the lead 21.
Further, the masking material 25 also covers the heat dissipation surface 24a of the heat dissipation plate 24. The masking material 25 will be released later.
It is separated from the board 21 and the heat sink 24. Here, the masking material 25 may cover each lead 21 one by one, or may collectively cover a plurality of leads 21.

As shown in FIG. 5B, the semiconductor device 1
An epoxy resin 27 is applied to the element forming surface 26 of No. 9. The application of the epoxy resin 27 is performed after the wire bonding process.

As shown in FIG. 3, the preheating furnace 12 is provided with a high frequency heater 28. The lead frame 18 is carried into the preheating furnace 12 by the carrying section 17,
The lead frame 18 is heated to a predetermined temperature by a high frequency heater 28. The preheating temperature of the lead frame 18 is set to, for example, 150 to 230 ° C. based on the melting temperature of the powder resin described later. Lead frame 18
The semiconductor element 19 and the heat dissipation plate 24 also rise in temperature in accordance with the heating.

The fluidized-bed coating tank 13 applies the fluidized-bed coating method. The fluidized dipping tank 13 includes a powder resin tank 29,
A blower (fluid portion) 30, a heater 31, and a fluidizing porous plate 32 are provided, and a powder resin tank 29 stores a powder resin (for example, epoxy powder) 33. The particle size of the powder resin 33 is, for example, about several μm to several hundreds μm. The blower 30 sends the fluidizing air 34 through the duct 35 to the fluidizing perforated plate 32, and the fluidizing air 34 that has passed through the fluidizing perforated plate 32 causes the powdered resin 33 to flow into a spray state. . The fluidizing air 34 is heated to a predetermined temperature (for example, 100 ° C. or lower) when passing through the heater 31.

The transport unit 17 has passed through the fluidized-bed tank 13, and the lead frame 18 is carried into the fluidized-bed tank 13 and immersed therein. The powder resin 33 floats around the lead frame 18 and is in contact with the lead frame 18.
Is melted by the heat of the lead frame 18. The molten resin adheres to the lead frame 18 to form a coating film. Then, as shown in FIG. 5C, the melted resin covers the periphery of the semiconductor element 19 and the heat radiating plate 24 to form a package 36 as a resin portion. When the package 36 is manufactured, the powder resin 33 is fused with the epoxy resin 27 applied to the semiconductor element 19. Further, the thickness A of the package 36 is about 200 μm.

The shape of the package 36 is the masking material 25.
Is regulated by. That is, the part to which the powder resin 33 adheres is the part not covered with the masking material 25. Here, the time required for welding the powdered resin 33 depends on the thickness of the package depending on the bonding wire 23.
Is greater than the height of the heat sink and the heat dissipation surface 2 of the heat dissipation plate 24.
4 is set to be substantially flush with the package 36. Specifically, it is several tens of seconds to several minutes.

The masking material 25 is peeled off from the lead 21 and the heat dissipation plate 24 after the package 36 is manufactured. As a result, as shown in FIG. 6A, the lead 21 projects from the side surface of the package 36, and the heat dissipation surface 24a of the heat dissipation plate 24 is exposed from the package 36.

Since a thin member such as the lead frame 18 has a small heat capacity and is easily cooled, the temperature of the lead frame 18 is powdered while being conveyed from the preheating furnace 12 to the fluidized dipping tank 13. It is conceivable that the temperature will be lower than the melting temperature of the resin 33. However, if the preheating temperature is set higher in consideration of the temperature decrease of the lead frame 18, the lead frame is
The temperature of the frame 18 can be kept sufficiently high. Further, in this embodiment, since the heat dissipation plate 24 is present, the heat capacity is larger than that in the case without the heat dissipation plate 24, and the lead frame 18 is hard to cool.

The lead frame 18 is sent to the post-heating furnace 14, and the package 36 is reheated (after-cured) at 150 to 230 ° C. for several tens of seconds to several minutes to be cured. . Further, the lead frame 18 has a cooling unit 15
After being cooled by, it is conveyed to the lead molding machine 16. Then, the lead molding machine 16 cuts and bends the lead 21, and punches a semiconductor device 37 as shown in FIG. 6B from the lead frame 18. Here, as the post-heating furnace 14, the cooling unit 15, and the lead molding machine 16, various general ones can be adopted.

In the semiconductor device manufacturing apparatus 11 and the manufacturing method as described above, since the package 36 is manufactured by the fluid immersion method, the wall thickness A of the package 36 is freely controlled by the immersion time. . Therefore, the semiconductor device 11 can be easily thinned as compared with the case where transfer molding is performed.

Furthermore, since it is not necessary to fill the cavity with resin, it is possible to prevent the occurrence of defective packaging due to unfilling. Further, since it is not necessary to flow the resin in the cavity, the uniform package 36 can be easily manufactured even when a plurality of semiconductor devices 11 are taken. Further, since no mold is used, the cost is low.

Further, the lead frame 18 is attached to the carrying section 17.
Since it does not need to be transferred from the mold to the mold, it can be continuously manufactured in-line. Therefore, automation of manufacturing is easy.

Further, since the package 36 is a free-form coating film, the shape of the package 36 is not limited by the mold, and the flexibility of package design is high. Further, in this embodiment, since the epoxy resin 27 is applied to the semiconductor element 19 before the package 36 is manufactured, the adhesiveness between the semiconductor element 19 and the powder resin 33 is high.

The present invention can be variously modified without departing from the scope of the invention. For example, in this embodiment, the semiconductor device 11 is provided with the heat dissipation plate 24.
The heat dissipation plate 24 may be omitted if necessary. The heat dissipation plate 24 is used when the semiconductor element 19 has a high degree of integration and a high operation speed, or when the semiconductor elements 11 are mounted at a high density.
More effective.

In this embodiment, the adhesive masking material 25 is used to prevent the powder resin 33 from adhering to the lead 21 and the heat radiating plate 24 at predetermined positions. Is not limited to this, and a fluororesin may be coated on a predetermined portion for masking. Here, when the fluororesin is used for masking, it can be illustrated in the same manner as in FIGS. 5A to 5C, so the illustration of the fluororesin is omitted here.

Further, as shown only in part in FIG. 8, a jig 41 for holding the lead frame 18 of the carrying section 17 may be used to cover a predetermined portion with the jig 41. . When the jig 41 is used for masking, the step of peeling unlike the case of the masking material 25 is not necessary, so that in-line processing can be further promoted.

Further, the manufacturing apparatus and the manufacturing method of the present invention can be applied to the manufacturing of the semiconductor device 46 of the type in which the heat dissipation plate 47 protrudes from the package 36 as shown in FIG. Next, a second embodiment of the present invention will be described with reference to FIGS.

10 to 13 sequentially show the manufacturing method according to the second embodiment of the present invention. Further, FIG. 11 shows a manufacturing apparatus 51 of this embodiment. Reference numeral 52 in FIG. 10 is a lead frame. In this lead frame 52, a plurality of sets (only one set is shown) of an island 53 and a large number of leads 54 are formed, and like the first embodiment, the leads 54 are formed.
Are arranged around the island 53. A semiconductor element 55 is bonded to the island 53 via an adhesive 56, and an electrode (not shown) of the semiconductor element 55 is connected to a corresponding lead 54 by a bonding wire (gold wire) 57.
Is connected to.

Further, the semiconductor element 55 of the island 53
A heat radiating plate 58 is joined to the surface on the opposite side. The heat dissipation plate 58 is made of a material having high thermal conductivity such as Al, Cl, or Fe-based metal. A positioning recess 60 is formed on the surface 59 of the heat sink. The recess 60 may be a hole or a key groove.

The manufacturing apparatus 51 shown in FIG.
A powder resin supply means 62, a vibrating means 63, and a high-frequency heater 64 as a heating means are provided. Of these, the mold 61 is composed of an upper mold 65 and a lower mold 66, which are combined with each other to form a cavity 67. The cavity 67 penetrates the upper mold 65,
It opens to 5. Between the upper die 65 and the lower die 66,
The dframe 52 is sandwiched, and the semiconductor element 55 and the heat sink 58 are housed in the cavity 67. The heat dissipation plate 58 reaches the bottom of the cavity 67.

Here, the depth of the cavity 67 is set so that the uppermost portion of the loop of the bonding wire 57 is slightly lower than the opening edge portion of the cavity 67. A radiator plate positioning means 68 is incorporated in the lower mold 66. The positioning means 68 is provided with a movable body 69 and a spring 70, which are accommodated in a positioning means accommodating chamber 71 opened at the bottom of the cavity 67. The movable body 69 is processed into a flat plate shape and has a convex portion 72 protruding upward. The movable body 69 positions the heat radiating plate 58 by engaging the convex portion 72 with the concave portion 60 of the heat radiating plate 58. Further, the movable body 69 is urged by the spring 70 to come into pressure contact with the heat dissipation plate 58, so that the heat dissipation plate 58 is moved to the island 5.
It is pressing on 3. Here, the convex portion 72 may be a pin or a key.

The powder resin supply means 62 includes a hopper 73,
It has an ejection pipe 74 whose ejection port faces the cavity 67. Then, the ejection pipe 74 guides the powder resin (for example, epoxy powder) 75 from the hopper 73 to the cavity 67, and the cavity 67 is supplied with a predetermined amount of the powder resin 75.
As the powder resin 75, as in the first embodiment, it is possible to use a resin having a particle size of, for example, several μm to several hundreds μm.

The vibrating means 63 supports the die 61,
The mold 61 is vibrated, and the powder resin 75 in the cavity 67
To be in a spray state. Here, various general vibrating means can be adopted.

The high frequency heater 64 melts and cures the powder resin 75 flowing in the cavity 67 by heating it at 150 to 230 ° C. for several tens of seconds to several minutes. Powder resin 75
Since the resin melts and hardens in the cavity 67, the shape of the resin after hardening matches the shape of the cavity 67. As a result, a package 76 as a resin portion that seals the semiconductor element 55 and the island 53 is manufactured. After this,
2, the package 76 is released and the lead 54
Are cut and bent.

Here, although not shown, a plurality of sets of cavities 67, high-frequency heaters 64, etc. are provided according to the number of semiconductor devices 75 to be packaged at the same time. In the manufacturing apparatus 51 and the manufacturing method as described above, since the powder resin 75 is supplied to the cavity 67 and the package 76 is manufactured by using the fluidized dipping method, it is necessary to flow the molten resin into the cavity 67. There is no. Since it is not necessary to make the cavity 67 large in order to secure the fluidity of the resin, the semiconductor device 51 can be easily thinned.

Since the pressure applied from the resin to the bonding wire 57 is smaller than that in the transfer molding, the bonding wire 57 can be prevented from being deformed or broken.

The present invention can be variously modified without departing from the scope of the invention. For example, in the present embodiment, the high frequency heater 64 is used as the heating means, but the present invention is not limited to this, and for example,
As shown in FIG. 15, the laser waveguide 81 is connected to the cavity 6
7, the cavity 67 may be irradiated with laser light 82 to heat the powder resin 75 by laser. A CO ₂ laser, a YAG laser, or the like can be used as the laser light source.

[0044]

As described above, according to the invention of claim 1, claim 2, claim 6 or claim 11, there is an effect that a thin semiconductor device can be easily manufactured.

[Brief description of drawings]

FIG. 1 is a block diagram showing a configuration of a manufacturing apparatus according to a first embodiment of the present invention.

FIG. 2 is a plan view showing an example of a lead frame.

FIG. 3 is a configuration diagram schematically showing a preheating furnace.

FIG. 4 is a configuration diagram schematically showing a fluidized immersion tank.

FIG. 5 is an explanatory view sequentially showing the manufacturing method according to the first embodiment of the present invention.

FIG. 6 is an explanatory view sequentially showing the manufacturing method according to the first embodiment of the present invention.

FIG. 7 is a process drawing showing the manufacturing method of the first embodiment of the present invention.

FIG. 8 is an explanatory view showing a modified example of a means for masking.

FIG. 9 is an explanatory view showing a method of manufacturing another type of semiconductor device.

FIG. 10 is an explanatory view showing the manufacturing method of the second embodiment of the present invention.

FIG. 11 is an explanatory diagram showing a molding step of a manufacturing method according to a second embodiment of the present invention and a manufacturing apparatus used for the molding step.

FIG. 12 is an explanatory diagram showing a released semiconductor device.

FIG. 13 is an explanatory diagram showing a semiconductor device after lead molding.

FIG. 14 is a process drawing showing the manufacturing method of the second embodiment of the present invention.

FIG. 15 is an explanatory diagram showing a modified example of the second embodiment of the present invention.

FIG. 16 is a sectional view showing a general semiconductor device.

[Explanation of symbols]

11 ... Semiconductor device manufacturing apparatus, 12 ... Preheating furnace (preheating section), 13 ... Fluidized dipping tank, 17 ... Conveying section, 18 ... Read frame, 19 ... Semiconductor element, 20 ... Island,
21 ... Lead, 25 ... Masking material, 36 ... Package (resin part), 37 ... Semiconductor device, 41 ... Jig, 51 ... Semiconductor device manufacturing apparatus, 52 ... Read frame, 53 ... Island , 54 ... Lead, 61 ... Mold, 62 ... Powder resin supply means, 63 ... Vibrating means, 64 ... Heating means, 65 ... Upper mold, 66 ... Lower mold, 67 ... Cavity, 75 ... Semiconductor device, 76 ... Package (resin part).

─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. ⁶ Identification code Office reference number FI technical display area // B29L 31:34

Claims (12)

[Claims] 1. A semiconductor element, an island on which the semiconductor element is mounted, a resin portion for encapsulating the semiconductor element, one end protruding from the resin portion and the other end electrically connected to the semiconductor element. In a device for manufacturing a semiconductor device having a lead, at least a lead frame having a plate shape and having a plurality of sets corresponding to the island and the lead is used as the resin portion. The preheating section for preheating to the melting temperature, the immersion tank for containing the powder resin, the fluid section for containing the powder resin in a fluidized state, and the preheated lead frame. A carrying section is carried in from the preheating furnace to the dipping tank to melt the powder resin to form the resin part, and to carry out the lead frame having the resin part formed therein from the dipping tank. Specially equipped Manufacturing equipment for semiconductor devices. 2. A semiconductor element, an island on which the semiconductor element is mounted, a resin portion for sealing the semiconductor element, one end protruding from the resin portion and the other end electrically connected to the semiconductor element. In a method of manufacturing a semiconductor device having a lead, a lead frame having a plate shape and having a plurality of sets corresponding to the island and the lead is formed on a portion where the resin portion is formed. A masking step of masking except; a preheating step of preheating the above lead frame to at least the melting temperature of the powder resin which becomes the above resin part; and a powder resin in which the above lead frame is fluidized. A method of manufacturing a semiconductor device, which comprises a step of dipping and adhering the powder resin to the lead frame to form the resin portion. 3. A lead frame in the masking step.
The method for manufacturing a semiconductor device according to claim 2, wherein a peelable masking material is attached to the film. 4. A lead frame in the masking step.
3. The method of manufacturing a semiconductor device according to claim 2, wherein a portion other than a portion where the resin portion is formed is covered with a fluorine resin. 5. A lead frame in the masking step.
3. The method of manufacturing a semiconductor device according to claim 2, wherein a portion of the frame other than the portion where the resin portion is formed is covered with a jig for holding the lead frame. 6. A semiconductor element, an island on which the semiconductor element is mounted, a resin portion for sealing the semiconductor element, one end protruding from the resin portion and the other end electrically connected to the semiconductor element. In an apparatus for manufacturing a semiconductor device having a lead, an upper die and a plate provided so as to be relatively contactable and separable with respect to the upper die and a plurality of sets corresponding to the island and the lead are formed. Having a plurality of cavities corresponding to the resin portion, which has a lower die for sandwiching a sheet-shaped lead frame with the upper die, and powder resin supply means for supplying powder resin to the cavities. And a heating means for heating the powder resin in the cavity by vibrating the mold to flow the powder resin in the cavity, and a heating means for heating the powder resin in the cavity. apparatus. 7. The semiconductor device manufacturing apparatus according to claim 6, wherein the heating means heats the powdered resin at a high frequency. 8. The apparatus for manufacturing a semiconductor device according to claim 6, wherein the heating means heats the powdered resin by laser. 9. The apparatus for manufacturing a semiconductor device according to claim 6, further comprising: a radiator plate positioning means for positioning a radiator plate inserted in the resin portion in the cavity. 10. The apparatus for manufacturing a semiconductor device according to claim 9, wherein the heat dissipation plate positioning means has a positioning body that presses against the heat dissipation plate and locks the heat dissipation plate by utilizing unevenness. 11. A semiconductor element, an island on which the semiconductor element is mounted, a resin portion for sealing the semiconductor element, one end protruding from the resin portion and the other end electrically connected to the semiconductor element. In a method of manufacturing a semiconductor device having a lead, a first step of supplying powder resin to a cavity having a shape corresponding to the resin portion, and a shape of the cavity by heating while flowing the powder resin. And a second step of molding the same into a semiconductor device. 12. The method of manufacturing a semiconductor device according to claim 11, wherein the powder resin is vibrated to flow in the second step.