JP2010092983A - Semiconductor device and method of manufacturing the same, and semiconductor manufacturing apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device by which the time needed to inject a liquid resin used to seal at least a part of the semiconductor device can be shortened, the number of manufacturing steps for the semiconductor device can be reduced, and warpage of the semiconductor device after resin sealing can be reduced, and to provided a semiconductor manufacturing apparatus and the semiconductor device with high reliability. <P>SOLUTION: The liquid resin 9 is injected in a cavity of a metallic mold 300 from a syringe 11 which is installed outside an upper metallic mold 200 and can inject the liquid resin. At this time, the inside of the syringe 11 is pressurized so that the pressure in the syringe 11 is higher than the pressure in the cavity before the liquid resin 9 is injected. The metallic mold 300 is heated after the liquid resin 9 is injected to cure the liquid resin 9. After the liquid resin 9 is cured, the resin-sealed semiconductor device is taken out of the metallic mold 300. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a semiconductor device, a manufacturing method thereof, and a semiconductor manufacturing device, and more specifically, a semiconductor device manufacturing method, a semiconductor manufacturing device, and a semiconductor manufacturing device that can manufacture a semiconductor device using a liquid resin. The present invention relates to a semiconductor device.

  As the speed and density of semiconductor elements increase, it has become mainstream to use the following method when mounting them to form a semiconductor device. First, flip-chip bonding is performed between the circuit surface, which is the main surface of the semiconductor element, and the substrate by using protruding electrodes respectively disposed on the circuit surface of the semiconductor element and the substrate surface opposite thereto. Then, the gap formed in the region between the semiconductor element and the substrate is sealed by injecting and filling with a liquid underfill resin using a capillary phenomenon. Recently, many attempts have been made to lower the dielectric constant of an insulating layer of a semiconductor element in order to drive the semiconductor element at a higher speed, and the strength of the insulating layer has been significantly reduced.

  The underfill resin that fills the gap between the semiconductor element and the substrate is originally intended to protect the circuit surface of the semiconductor element and the protruding electrodes. However, since the strength of the insulating layer of the semiconductor element is reduced, there is a concern about the destruction of the insulating layer due to the thermal stress generated when the semiconductor element is driven. Therefore, for example, by adding a stress-reducing material into the underfill resin, increasing the filler amount to lower the thermal expansion coefficient, and reducing the difference in thermal expansion coefficient between the semiconductor element and the substrate, the generated thermal stress can be reduced. We are aiming for a decline. However, when attempting to reduce the thermal stress using the above-described method, it becomes difficult to inject the resin because the viscosity of the resin increases or the thixotropy increases.

  On the other hand, due to the higher density of semiconductor elements, the miniaturization of wiring has progressed, and the number of bumps and the pitch of bumps have been reduced. For this reason, the gap between the semiconductor element and the substrate is narrowed, which hinders the injection of the underfill resin. Therefore, for example, in Japanese Patent Application Laid-Open No. 2006-16433 (hereinafter referred to as “Patent Document 1”), the viscosity is lowered by using a high fluidity particle size adjusted as the inorganic filler used in the underfill resin. An underfill resin that is easy to inject is disclosed. Further, for example, Japanese Patent Laying-Open No. 2005-200444 (hereinafter referred to as “Patent Document 2”) impairs the reliability of a sealed semiconductor device having a low viscosity by adjusting the molecular structure of an epoxy resin and a curing agent. No thermosetting liquid resin composition is disclosed.

  On the other hand, as a method for sealing an underfill resin, for example, the following method is proposed in Japanese Patent No. 3220739 (hereinafter referred to as “Patent Document 3”). The electronic component flip-chip bonded to the substrate is placed under reduced pressure, and the liquid resin is supplied so as to surround the entire periphery of the region sandwiched between the semiconductor element and the substrate without a gap. Air bubbles contained in the supplied liquid resin are removed, and the space surrounded by the liquid resin in which the semiconductor element and the substrate are present is reduced in pressure. Then, the decompressed state is released and the pressure is returned to atmospheric pressure. Then, due to the pressure difference between the reduced pressure state in the space surrounded by the liquid resin and the atmospheric pressure outside the space, the liquid resin is forcibly sucked and filled into the gap between the semiconductor element and the substrate. .

  Further, for example, Japanese Patent Application Laid-Open No. 2004-179460 (hereinafter referred to as “Patent Document 4”) discloses the following method. A liquid resin is supplied onto one main surface of a workpiece on which a semiconductor element is mounted on a substrate in a vacuum chamber in a vacuum discharge molding apparatus. Then, once the work is taken out of the room, the work is heated and pressurized in a press device to shape the liquid resin so that the shape of the liquid resin becomes flat while promoting the effect of the liquid resin.

Further, for example, Japanese Patent Laid-Open No. 2005-53143 (hereinafter referred to as “Patent Document 5”) discloses the following method. After the mold is opened, the article to be molded and the liquid resin are supplied, and then evacuated after being sealed with an air seal. Thereafter, the molded product is clamped using a mold, a cavity block provided in the mold, and a clamper to fill the resin.
JP 2006-16433 A Japanese Patent Laying-Open No. 2005-200444 Japanese Patent No. 3220739 JP 2004-179460 A JP 2005-53143 A

  However, Patent Document 1 and Patent Document 2 described above disclose only a technique for reducing the viscosity of the underfill resin, and do not disclose a technique for improving the underfill process.

  Further, in the sealing method in Patent Document 3 described above, only the pressure difference between the gap between the semiconductor element and the substrate surrounded by the liquid resin and the ambient atmospheric pressure is used. Since the underfill resin is filled, the flow characteristics of the underfill resin are affected. The fluidity of the underfill resin may change over time and temperature changes. When the fluidity of the underfill resin changes, the resin into the gap generated in the region sandwiched between the semiconductor element and the substrate Infusion may be difficult. For this reason, it is difficult to fill the gap with the liquid resin only by using only the pressure difference as described above.

  Moreover, the electronic component using the sealing method in Patent Document 3 described above is in a state in which the main surface of the semiconductor element on the side not facing the substrate is exposed, and there are bumps sandwiched between the semiconductor element and the substrate. Resin is filled as an underfill resin only in the region to be processed. In this case, the warpage of the semiconductor element or the substrate may occur due to the thermal stress generated by the difference in thermal expansion coefficient between the semiconductor element and the substrate, which may reduce the reliability.

  Furthermore, in the method for sealing a semiconductor device in Patent Document 4 described above, a work is introduced into a vacuum chamber that generates a vacuum state, a step of applying a liquid resin, and a vacuum is broken in the vacuum chamber to take out the work. It is necessary to perform a process and a process of shaping the shape of the liquid resin by heating and pressurizing the workpiece. Therefore, there is a problem that the number of processes is large and the tact time for each workpiece becomes long. Further, the method for sealing a semiconductor device in Patent Document 4 can be applied only to a mold-type semiconductor device in which the shape of a work is a wire bond, and cannot be applied to sealing a semiconductor device of a type in which flip chip bonding is underfilled. . The semiconductor device sealing method in Patent Document 5 described above cannot be applied to the sealing of a semiconductor device in which flip-chip bonding is underfilled, similarly to the semiconductor device sealing method in Patent Document 4.

  The present invention has been made in view of the above-described problems. Its purpose is to reduce the time required for injecting the liquid resin used for sealing at least a part of the semiconductor device, to reduce the number of manufacturing steps of the semiconductor device, and to resin sealing. It is an object of the present invention to provide a semiconductor device manufacturing method and a semiconductor manufacturing apparatus that can reduce warpage of the semiconductor device later. Another object is to provide a highly reliable semiconductor device with reduced warpage.

  A manufacturing method of a semiconductor device according to the present invention is a manufacturing method of a semiconductor device having a first part including a semiconductor element flip-chip bonded on a substrate and a second part including a heat dissipation part. A process is provided. The first and second parts are installed in a pair of molds that can be opened and closed. The pair of molds are closed so that the first part and the second part are in close contact with each other. A liquid resin is injected into the space between the substrate and the heat radiating portion using the pressure difference from the pressure in the space. The liquid resin is cured by heating the liquid resin.

  A semiconductor device according to the present invention includes a substrate, a semiconductor element mounted on the substrate via a plurality of conductive bumps, a heat dissipation member installed on the semiconductor element via a heat dissipation resin layer, and the substrate and the heat dissipation member. And a resin portion integrally formed so as to extend from the region around the semiconductor element to the gaps between the plurality of conductive bumps.

  The semiconductor manufacturing apparatus according to the present invention can be used when manufacturing a semiconductor device having a semiconductor element flip-chip bonded on a substrate, a heat radiating portion, and a resin portion. The semiconductor manufacturing apparatus is capable of opening and closing and a pair of molds having a cavity capable of receiving a part of the semiconductor device, a heating unit capable of heating the mold, and a liquid provided in the mold. A resin passage for supplying the resin, a liquid resin supply portion capable of supplying the liquid resin into the cavity via the resin passage, and a heat insulating / cooling portion capable of insulating or keeping the liquid resin supply portion from the surroundings are provided.

  According to the semiconductor device manufacturing method and the semiconductor manufacturing apparatus according to the present invention, since the liquid resin can be efficiently injected into the space between the substrate and the heat dissipating portion previously installed in the mold, the injection of the liquid resin is possible. Can be shortened. In addition, since the substrate and the heat radiating portion can be installed in the mold in advance to perform resin sealing, the number of manufacturing steps of the semiconductor device can be reduced. Furthermore, since the resin portion can be formed in a region between the substrate and the heat radiating portion and located around the semiconductor element, warpage of the semiconductor device after resin sealing can be reduced, and the semiconductor device Reliability can be improved. In the semiconductor device according to the present invention, since the resin portion is provided in the region between the substrate and the heat dissipation member and located around the semiconductor element, a highly reliable semiconductor device with reduced warpage is provided. Can do.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. In each embodiment, portions having the same function are denoted by the same reference numerals, and the description thereof will not be repeated unless particularly necessary.

(Embodiment 1)
FIG. 1 is a flowchart showing an outline of a manufacturing process of a semiconductor device in each embodiment of the present invention. A method for manufacturing the semiconductor device according to the first embodiment will be described below along the contents of the flowchart shown in FIG. FIG. 2 is a schematic diagram showing an example of the structure of first and second workpieces to be described later.

  As shown in FIG. 1, first, a first workpiece (first portion) is prepared (S10). For example, as shown in FIG. 2, the first workpiece is obtained by flip-chip bonding the semiconductor element 1 on one main surface of the substrate 3. More specifically, the first workpiece is formed by connecting a circuit surface which is one main surface of the semiconductor element 1 and a substrate 3 disposed so as to face the circuit surface through conductive bumps 2 made of solder or the like. And flip chip bonding. For example, various conductive patterns are formed on the main surface of the substrate 3.

  Next, a second workpiece (second portion) is prepared (S20). The second workpiece includes a heat radiating portion (heat radiating mechanism) that radiates heat generated when the semiconductor device is driven. For example, as shown in FIG. 2, a material obtained by applying a liquid heat radiation resin 5 on one main surface of a heat spreader 4 that is a heat radiation member can be used as the second workpiece.

  The heat radiating resin 5 is a resin having a heat radiating function, and heat generated in the semiconductor element 1 can be transmitted to the heat spreader 4 through the heat radiating resin 5. In order to efficiently transfer heat from the semiconductor element 1 to the heat spreader 4 through the heat radiating resin 5, the heat radiating resin 5 is preferably made of a resin having excellent thermal conductivity.

  Here, a method of applying the heat radiation resin 5 on one main surface of the heat spreader 4 will be described. The application process of the heat-dissipating resin 5 may be performed manually, but when it is performed manually, it becomes difficult to control the application amount and thickness of the heat-dissipating resin 5 with high accuracy. Therefore, it is preferable to apply the heat radiation resin 5 using an automatic machine. The automatic machine preferably has a function of inverting the heat spreader 4 to which the heat-dissipating resin 5 is applied.

  5 to 8 show an example of an automatic machine that can be used when the heat-dissipating resin 5 is applied. As shown in FIG. 5, the suction hand 400 includes an arm 30 that holds the sucked heat spreader 4, an arm 32 that is rotatably connected to the arm 30 through a pin 31, and an arm 32 through a pin 33. And an arm 34 rotatably connected.

  By rotating the arm 30, the orientation of the main surface of the heat spreader 4 can be freely changed. For example, the arm 30 can be rotated about 180 degrees around the pin 31 as shown by the arrow in FIG. By rotating the arm 30 about 180 degrees in accordance with the arrow from the state shown in FIG. 5, the heat spreader 4 can be inverted so that one main surface of the heat spreader 4 faces upward as shown in FIG.

  As shown in FIG. 7, the heat radiating resin 5 is applied to the heat spreader 4 with one main surface facing upward using a heat radiating resin application mechanism 410 that is an automatic machine different from the suction hand 400. The heat radiation resin application mechanism 410 includes a heat radiation resin syringe 35 that stores the heat radiation resin 5 and a dispenser 36 that directly applies the heat radiation resin 5 supplied from the heat radiation resin syringe 35 to the heat spreader 4.

  When an appropriate amount of the heat dissipation resin 5 is applied onto one main surface of the heat spreader 4 using the heat dissipation resin application mechanism 410, the arm 30 is rotated about 180 degrees around the pin 31 as indicated by an arrow in FIG. The state shown in FIG. 8 is obtained. The heat spreader 4 and the heat dissipating resin 5 as the second workpiece prepared in this way are transferred to a mold described later and installed in the mold.

  When the second work to which the heat radiation resin 5 is applied is installed in the mold, the heat spreader 4 may be reversed so that the heat radiation resin 5 faces downward. In this case, it is preferable to use a resin having high thixotropy as the material of the heat radiating resin 5 so that the applied heat radiating resin 5 does not sag from the heat spreader 4.

  It is conceivable that the heat spreader 4 shown in FIG. 2 is made of, for example, a metal plate such as copper, copper alloy, or iron so that heat generated in the semiconductor element 1 can be efficiently dissipated. However, any material other than metal can be used as the material of the heat spreader 4 as long as the material has excellent heat transfer properties. Although the thickness of the heat spreader 4 can be selected as appropriate, it is conceivable to have a thickness of, for example, about 0.2 mm to several mm in order to effectively suppress deformation of the semiconductor device in addition to excellent heat dissipation characteristics.

  Next, the first and second workpieces described above are installed in a pair of molds that can be opened and closed (S30). In the first embodiment, the first workpiece is installed in one mold (upper mold) of the pair of molds, and the second workpiece is installed in the other mold (lower mold). To do.

  Here, an example of a semiconductor manufacturing apparatus capable of manufacturing the semiconductor device of the present embodiment will be described with reference to FIGS. FIG. 3 is a view showing a state in which a first work and a second work are installed on a pair of molds 300 in the semiconductor manufacturing apparatus, and FIG. 4 shows a mold after the mold 300 is closed. It is a figure which shows schematically the state which inject | poured the liquid resin 9 into the 300 interior space (cavity).

  As shown in FIGS. 3 and 4, the semiconductor manufacturing apparatus in the present embodiment includes a pair of molds 300. The semiconductor manufacturing apparatus also includes a transfer mechanism for transferring the workpiece to the mold 300, a liquid resin supply unit that can supply liquid resin into the cavity of the mold 300, and a molded semiconductor device from the mold 300. A take-out mechanism for take-out.

  As a workpiece transfer mechanism, for example, a handler capable of adsorbing and transferring a workpiece can be used. This transfer mechanism may be capable of transferring each workpiece individually, or may be capable of transferring a plurality of workpieces simultaneously. As a take-out mechanism of the semiconductor device after resin sealing, a known mechanism that can take out the resin molded product from the mold may be used.

  The pair of molds 300 can be opened and closed, and the pair of molds 300 form a cavity that can receive the first and second workpieces. 3 and 4 can be opened and closed in the vertical direction, and includes a lower mold 100 positioned on the lower side and an upper mold 200 positioned on the upper side.

  The lower mold 100 has a recess capable of receiving the substrate 3 in the first workpiece. The upper mold 200 has a side wall portion that protrudes toward the lower mold 100. The side wall portion defines a part of the cavity of the mold 300. The side wall portion is provided from the top of the substrate 3 of the first workpiece placed in the recess of the lower die 100 to the upper surface of the lower die 100 located in the periphery thereof. Therefore, when the mold 300 is closed, as shown in FIG. 4, the bottom surface of the side wall portion comes into contact with both the lower mold 100 and the substrate 3 of the first workpiece. The upper die 200 is provided with a reduced pressure adsorption unit 6 that can adsorb the second workpiece under reduced pressure. In the first embodiment, the example in which the reduced pressure adsorption unit 6 is installed in the upper mold 200 is illustrated, but the reduced pressure adsorption unit 6 may be installed in the lower mold 100 as well. By installing the reduced pressure adsorption unit 6 in both the upper mold 200 and the lower mold 100, the workpiece can be fixed with high accuracy. Moreover, you may give a pressurization function to the vacuum adsorption unit 6. FIG.

  As shown in FIGS. 3 and 4, the upper mold 200 is provided with a seal ring 8 which is a pressure seal mechanism when the mold is closed. For this reason, the cavity inside the mold 300 can be almost completely sealed from the outside. This seal ring 8 has a pressure resistance that can pressurize the cavity inside the mold 300 after closing the mold to a pressure higher than atmospheric pressure or to a pressure lower than atmospheric pressure. Preferably there is. For example, as the seal ring 8, a rubber seal such as an O-ring can be used.

  In addition, the mold 300 (at least one of the lower mold 100 and the upper mold 200) is provided with a heater (heating unit: not shown) capable of heating them, and for supplying the liquid resin 9 into the cavity. A resin passage is provided. One type of heater may be installed in the mold 300, but a plurality of types of heaters may be installed in the mold 300. For example, a pulse heater that can raise the temperature of the mold 300 to a temperature higher than the curing temperature of the liquid resin in a short time, and the temperature of the mold 300 can be raised and maintained to a temperature suitable for the flow of the liquid resin. It is conceivable to install a proper stationary heater in the mold 300. The pulse heater is a heater that can be heated in a short time to a temperature higher than that of the stationary heater.

  By using the above-mentioned steady heater, the lower mold 100 and the upper mold 200 can be appropriately heated together with the first and second workpieces, and the temperature in the cavity of the mold 300 is changed to the flow of the liquid resin. The temperature can be adjusted to a suitable temperature (for example, about 50 ° C. to 120 ° C.). More specifically, the temperature in the cavity of the mold 300 is lower than the curing temperature of the liquid resin (for example, about 100 ° C. to 180 ° C.), and the viscosity of the liquid resin is not drastically lowered and the liquid resin is smooth in the cavity. It can be adjusted so that the value can flow.

  As shown in FIGS. 3 and 4, a peeling mechanism such as a peeling-only sheet 7 is disposed on a part of the inner wall surface of the upper mold 200 and in contact with the liquid resin 9. Thereby, the semiconductor device after the liquid resin 9 is cured can be easily peeled from the upper mold 200. As a material for the release-only sheet 7, for example, a fluororesin sheet such as polytetrafluoroethylene or a silicone resin sheet is preferably used. By installing the exfoliation sheet 7, the semiconductor device can be easily exfoliated from the mold 300 after the liquid resin 9 is cured. Instead of the peeling-only sheet 7, surface processing such as selectively applying a fluororesin to the inner wall surface of the upper mold 200 may be performed. When the mold is opened, the semiconductor device after the liquid resin 9 is cured is air-cooled and contracts in volume, and has a size smaller than that of the mold. In this case, by applying a pressurizing function to the vacuum adsorption unit 6, the semiconductor device can be pressurized, and the semiconductor device can be easily released from the mold.

  As the liquid resin supply unit, a syringe 11 capable of supplying the liquid resin into the cavity of the mold 300 can be used. The syringe 11 is installed outside the upper mold 200 in the examples of FIGS. 3 and 4. Thus, by installing the syringe 11 outside the mold, it is possible to reduce the influence of heat from the mold 300 to the liquid resin in the syringe 11.

  A nozzle is attached to the syringe 11, the nozzle is inserted into a nozzle insertion port (resin passage) 15 provided in the upper mold 200, and liquid resin is injected into the cavity of the mold 300 from the syringe 11 through the nozzle. Can be supplied. As the liquid resin 9, it is conceivable to use a one-component liquid resin, but a two-component liquid resin can also be used. Specific examples of the material of the liquid resin 9 include a liquid adhesive in which a liquid epoxy resin, a liquid epoxy curing agent, a solid filler, a coupling agent and the like are mixed.

  3 and 4, the syringe 11 is mounted on the upper mold 200, but it is also conceivable to mount the syringe 11 on the lower mold 100 side. Around the syringe 11, it is preferable to install a heat insulating / cooling section (not shown) that can insulate or cool the syringe 11 from the surroundings. Thereby, before injection into the cavity of the mold 300, the liquid resin 9 can be effectively suppressed from being heated in the syringe 11 to cause a chemical reaction. It can be stably supplied into the cavity of the mold 300.

  Referring again to FIG. 3, the first workpiece is placed from the inloader side (for example, the left side in FIG. 3) in the lower mold 100 of the semiconductor manufacturing apparatus having the above-described configuration. When the first work is placed on the lower mold 100, a handler that sucks and transfers the work may be used. A handler capable of transferring a plurality of workpieces may be used. More specifically, for example, a robot for chucking a workpiece or a tray on which a plurality of workpieces are mounted is conveyed to the installation position of the lower mold 100 using a belt conveyor or the like, and the first workpiece is transferred to the lower mold 100. Should be installed.

  The second workpiece is also installed in the upper mold 200 from the inloader side (for example, the left side in FIG. 3). Similarly, when the second workpiece is installed in the upper mold 200, a transfer handler for each workpiece or a handler capable of transferring a plurality of workpieces can be used. Further, the second workpiece is held by the upper mold 200 while being sucked by the reduced pressure suction unit 6.

  After the first and second workpieces are placed on the lower mold 100 and the upper mold 200, respectively, the mold 300 is closed. Thereby, as shown in FIG. 4, the first and second workpieces are partially adhered or bonded in the cavity of the mold 300. In the example of FIG. 4, the heat dissipating resin 5 of the first workpiece and the main surface of the second workpiece that is not the circuit surface of the semiconductor element 1 are in close contact with each other. Thus, the heat radiation resin 5 also plays a role of bringing the first workpiece and the second workpiece into close contact with each other.

  Since the mold 300 is closed as described above and the first work and the second work are partially brought into close contact with each other, it is not necessary to suck the second work onto the upper mold 200. Therefore, the power of the vacuum suction unit 6 is turned off, and the suction state of the second workpiece by the vacuum suction unit 6 is released. In this state, the liquid resin 9 is injected as shown in FIG. 1 (S40). Thereby, the liquid resin 9 can be injected into the space in the cavity located between the heat spreader 4 of the first workpiece and the substrate 3 of the second workpiece.

  At this time, the liquid resin 9 is injected using a pressure difference between the pressure in the cavity and the pressure in the syringe 11. More specifically, the pressure inside the syringe 11 is made relatively higher than the pressure in the space in the cavity, and the liquid resin 9 is injected into the cavity using this pressure difference. For example, if the pressure in the cavity before the injection of the liquid resin 9 is smaller than the atmospheric pressure, the liquid resin 9 is injected while maintaining the pressure inside the syringe 11 at or above the atmospheric pressure. Thus, by injecting the liquid resin 9 using the pressure difference, the liquid resin 9 can be efficiently injected into the cavity.

  Further, when the liquid resin 9 is injected, the mold 300 is appropriately heated by using a stationary heater built in the mold 300, so that the space in the cavity of the mold 300 together with the first and second workpieces is obtained. The temperature in the cavity of the mold 300 can be adjusted to a temperature suitable for the flow of the liquid resin 9. As a result, the liquid resin 9 can be efficiently injected into the space between the first and second workpieces including a minute gap between the bumps 2. The temperature at which the liquid resin 9 can smoothly flow in the cavity of the mold 300 differs depending on the type of the liquid resin 9 and the heating temperature of the mold 300 depends on the type of the liquid resin 9 to be used. Set as appropriate.

  Through the liquid resin injection process, the cavity inside the mold 300 is filled with the liquid resin 9. As a result, a narrow gap sandwiched between the semiconductor element 1 and the substrate 3 is filled with the liquid resin 9 (underfill process), and a region around the semiconductor element 1 and between the heat spreader 4 and the substrate 3 is also liquid. The resin 9 can be filled.

  After supplying a sufficient amount of the liquid resin 9 to fill the cavity of the mold 300 into the cavity, an appropriate amount of the liquid resin 9 is replenished from the syringe 11 to the cavity. In other words, after filling the cavity of the mold 300 with the liquid resin 9, the liquid resin 9 in the cavity is pressurized. Thereafter, the nozzle insertion port 15 is closed. The nozzle insertion port 15 can be closed using, for example, an electromagnetic valve (not shown).

  After filling the cavity with the liquid resin 9 as described above, the liquid resin 9 in the cavity can be pressurized by replenishing the cavity with the liquid resin 9, and voids are generated inside the liquid resin 9. Can be effectively suppressed.

  After filling the cavity with the liquid resin 9, as shown in FIG. 1, the liquid resin 9 is cured (S50). In order to cure the liquid resin 9, the liquid resin 9 is heated. At this time, it is preferable to heat the mold 300 while maintaining the pressurized state of the liquid resin 9. Thereby, the liquid resin 9 can be cured while effectively preventing the voids and the like from remaining inside the liquid resin 9. Further, it is preferable that the temperature of the mold 300 is raised to a temperature equal to or higher than a predetermined temperature at which the liquid resin 9 is cured by the above-described pulse heater built in the mold 300. By these things, in addition to being able to harden the liquid resin 9 efficiently in a short time, the hardening reaction of the liquid resin 9 can also be accelerated | stimulated.

  After the liquid resin 9 is cured as described above, the work is taken out as shown in FIG. 1 (S60). Specifically, when the liquid resin 9 has been cured to such a degree that the adhesive force between the cured resin and the workpiece is sufficiently developed and can be separated from the mold 300, the pulse heater is turned off. Thereafter, the mold 300 is opened. Then, the semiconductor device after resin sealing is taken out from the unloader side (the right side in FIGS. 3 and 4) of the mold 300 by the take-out mechanism.

  Through the above steps, as shown in FIG. 14, the substrate 3, the semiconductor element 1 mounted on the substrate 3 through the plurality of conductive bumps 2, and the heat dissipation resin 5 on the semiconductor element 1. A resin portion 9a integrally formed in the space between the installed heat spreader (heat radiating member) 4 and the substrate 3 and the heat spreader 4 so as to extend from the region around the semiconductor element 1 to the gap between the bumps 2. Is obtained.

<Modification 1>
Next, Modification 1 of Embodiment 1 will be described with reference to FIG. In the first embodiment described above, the case where the liquid heat radiation resin 5 is used has been described, but a plate-shaped heat radiation sheet 50 may be used instead of the heat radiation resin 5. FIG. 9 is a schematic view showing a structure example of the first and second workpieces when the heat radiating sheet 50 is used instead of the heat radiating resin 5.

  As shown in FIG. 9, in the first modification, a plate-shaped heat radiation sheet 50 is brought into close contact with one main surface of the heat spreader 4 instead of the liquid heat radiation resin 5. The heat radiating sheet 50 is obtained by processing the heat radiating resin 5 into a flat plate shape, and has a function of radiating heat generated in the semiconductor device in the same manner as the heat radiating resin 5.

  The use of the heat dissipation sheet 50 eliminates the need for precise control of the coating amount and thickness as in the case where the liquid heat dissipation resin 5 is used. Moreover, compared with the case where the thermal radiation resin 5 is used, the possibility of dropping from the heat spreader 4 can be reduced. Except this, it is basically the same as the case of the heat radiation resin 5. 10 and 11 show a state where the first workpiece and the second workpiece including the heat dissipation sheet are installed in the mold 300. FIG.

  Note that the suction hand 400 shown in FIGS. 5 to 8 can also be used when the heat radiating sheet 50 is attached to the heat spreader 4. When the suction hand 400 is used, the heat radiation sheet 50 may be brought into close contact with one main surface of the heat spreader 4 held by the arm 30. The operation of bringing the heat dissipation sheet 50 into close contact may be performed manually or using an automatic machine. Moreover, you may make it purchase the 2nd workpiece | work which mounted | wore the heat dissipation sheet 50 previously.

  The semiconductor device according to the first modification has a structure in which the heat dissipation resin 5 of the semiconductor device shown in FIG.

<Modification 2>
Next, a second modification of the first embodiment will be described with reference to FIG. In the semiconductor device manufacturing method described above, the second workpiece is placed in the upper mold 200. However, the second workpiece including the heat spreader 4 in which the heat radiating resin 5 or the heat radiating sheet 50 is disposed may be installed on the lower mold 100 side in a state where the mold 300 is opened.

  FIG. 12 is a schematic view showing a state where the first and second workpieces are installed in the mold 300 with the mold 300 opened. As shown in FIG. 12, for example, the heat spreader 4 including the heat dissipation sheet 50 is temporarily fixed on one main surface of the semiconductor element 1 in the first workpiece installed in the lower mold 100. In the example shown in FIG. 12, the heat radiating sheet 50 is used, but the heat radiating resin 5 may be used instead of the heat radiating sheet 50. The mounting method of the heat dissipation sheet 50 and the heat dissipation resin 5 is the same as that described above.

  In order to temporarily fix the heat spreader 4 to which the heat-dissipating resin 5 or the heat-dissipating sheet 50 is attached to the semiconductor element 1 with high accuracy, for example, the heat-dissipating resin 5 or the heat-dissipating sheet is used by using another device (not shown). The press may be performed by applying a relatively low load (pressure) to 50. Thereby, the heat spreader 4 can be brought into close contact with the semiconductor element 1 through the heat radiating resin 5 or the heat radiating sheet 50. The load applied here may be, for example, about 20 g or more and 50 g or less. Further, for example, a temporary fixing may be performed while heating the workpiece at a low temperature by using a pulse heater built in the upper mold 200. Specifically, the heating may be performed at a temperature of about 50 ° C. to 200 ° C.

  After temporarily fixing the second workpiece to the first workpiece as described above, the mold 300 is closed. Thereby, similarly to the case shown in FIG. 11, the first and second workpieces can be partially adhered or adhered in the cavity of the mold 300. The semiconductor device in Modification 2 also has a structure in which the heat dissipation resin 5 of the semiconductor device shown in FIG.

  According to the manufacturing method of the semiconductor device in the first embodiment described above, one step of injecting and curing the resin between the workpieces, and mounting the heat spreader equipped with the heat radiating resin or the heat radiating sheet on the semiconductor device. This can be done using a mold. Therefore, the number of manufacturing steps of the semiconductor device can be reduced and the tact time can be reduced as compared with the conventional example in which these steps are performed as separate steps by another device.

  Further, by using the semiconductor manufacturing apparatus according to the first embodiment, the liquid resin is unlikely to be affected by heat from each heater built in the mold before being injected into the cavity of the mold. It can also be. For this reason, the viscosity of the liquid resin can be maintained at a value suitable for flow, and the time required to inject the liquid resin into the cavity of the mold can be shortened.

  Furthermore, by filling the cavity with a liquid resin after filling the cavity of the mold, it is possible to effectively suppress, for example, the generation of voids in the liquid resin. For this reason, the airtightness of the liquid resin filled in the cavity can be improved.

  Furthermore, according to the manufacturing method of the semiconductor device in the first embodiment, the resin portion can be formed in the region around the semiconductor element and between the heat spreader (heat radiating member) and the substrate. Thereby, the curvature of the semiconductor device after resin sealing can be reduced.

  FIG. 13 is a schematic view showing a semiconductor device in which only an underfill resin is formed, and FIG. 14 is a schematic view showing a semiconductor device manufactured using the manufacturing method of the present embodiment.

  In the semiconductor device shown in FIG. 13, the resin portion (underfill resin) 9 a is formed in a region between the semiconductor element 1 and the substrate 3, but does not reach the heat spreader 4. When such a resin portion 9a is formed, the thermal expansion coefficient of the semiconductor element 1 (about 3 ppm when the material of the semiconductor element 1 is silicon) and the thermal expansion coefficient of the substrate 3 (when the material of the substrate 3 is an organic material). Therefore, there is a possibility that the semiconductor element 1 and the substrate 3 are warped in an upwardly convex shape due to a temperature change when the liquid resin is cured.

  On the other hand, in the case of the semiconductor device of the first embodiment shown in FIG. 14, the resin portion 9b is not only in the region between the semiconductor element 1 and the substrate 3, but around the semiconductor element 1 and in the heat spreader 4 and the substrate. The region between 3 is also filled. In this way, by forming the resin portion 9b so as to connect the heat spreader 4 and the substrate 3 around the semiconductor element 1, the deformation of both the heat spreader 4 and the substrate 3 due to thermal stress at the time of curing of the liquid resin is suppressed. It is possible to reduce the amount of warpage of the semiconductor device after the liquid resin is cured. In particular, when the heat spreader 4 has a sufficient thickness and is rigid, the amount of warpage of the semiconductor device can be more effectively reduced. As a result, a highly reliable semiconductor device can be obtained.

(Embodiment 2)
Next, Embodiment 2 of the present invention will be described with reference to FIG. FIG. 15 is a schematic view showing a state in which the mold 300 of the semiconductor manufacturing apparatus according to the second embodiment of the present invention is closed and resin is injected into the cavity of the mold 300.

  As shown in FIG. 15, the mold 300 of the semiconductor manufacturing apparatus according to the second embodiment includes a decompression device 12 on the side opposite to the syringe 11 that supplies the liquid resin 9. The decompression device 12 has a function of reducing the pressure in the cavity of the mold 300. Other configurations are the same as those in the first embodiment.

  By providing the decompression device 12 as described above, the pressure in the cavity of the mold 300 can be decompressed so as to be a value smaller than the pressure in the syringe 11. For example, when the pressure inside the syringe 11 before the injection of the liquid resin 9 is atmospheric pressure, the pressure in the cavity of the mold 300 can be reduced to a pressure lower than atmospheric pressure by the pressure reducing device 12. Thus, by reducing the pressure in the cavity of the mold 300, the pressure in the syringe 11 can be made relatively higher than the pressure in the cavity of the mold 300. Thereby, the liquid resin 9 can be efficiently injected into the cavity of the mold 300 using the pressure difference between the pressure inside the cavity of the mold 300 and the pressure inside the syringe 11. If the pressure inside the syringe 11 is larger than atmospheric pressure, the pressure in the cavity of the mold 300 may be atmospheric pressure or lower than atmospheric pressure.

  The method for manufacturing a semiconductor device according to the second embodiment includes a step of reducing the pressure in the cavity of the mold 300 from the pressure inside the syringe 11 before injecting the liquid resin 9 into the cavity of the mold 300. Prepare. Other manufacturing processes are the same as those in the first embodiment. Further, the structure of the semiconductor device in the second embodiment is basically the same as that in the first embodiment.

(Embodiment 3)
Next, Embodiment 3 of the present invention will be described with reference to FIGS. FIG. 16 is a schematic diagram showing a state in which the first and second workpieces are installed in the mold of the semiconductor manufacturing apparatus according to the third embodiment of the present invention. 17 is a schematic cross-sectional view taken along the line XVII-XVII in FIG.

  As shown in FIG. 16, in the mold 300 of the semiconductor manufacturing apparatus according to the third embodiment, the semiconductor element 1 is placed on one main surface of the substrate 3 with the first workpiece mounted on the lower mold 100. A metal ring 14 is disposed so as to surround the metal ring 14. The ring 14 is bonded to the first workpiece via an adhesive or an adhesive sheet (not shown). The ring 14 is also connected to the heat spreader 4 of the second workpiece via the adhesive 13.

  As shown in FIG. 17, the ring 14 has a substantially rectangular shape in plan view and an annular shape. The semiconductor element 1 is disposed inside the ring 14. Examples of the material of the ring 14 include copper, iron, and titanium. The ring 14 is preferably made to have a size so as to be disposed in the outermost part of the cavity of the mold 300, but may be smaller than this if it can surround the semiconductor element 1. The configuration of the semiconductor manufacturing apparatus other than the above is the same as that in the first embodiment.

  The ring 14 as described above is bonded onto one main surface of the substrate 3 by performing a light press while the mold 300 is opened while precisely controlling the position to be bonded using, for example, an automatic machine. To do.

  Before the mold 300 is closed, an adhesive 13 for bonding the ring 14 and the heat spreader 4 installed on the upper mold 200 is applied on the main surface of the heat spreader 4 as shown in FIG. Then, it is applied to the area facing the ring 14. As the adhesive 13, for example, an epoxy resin adhesive can be used. In place of the adhesive 13, a plate-like adhesive film or adhesive sheet may be used.

  In the example of FIG. 16, the heat spreader 4 and the heat radiating resin 5 are installed in the upper mold 200. However, as described in the first embodiment, these may be installed in the lower mold 100 together with the semiconductor element 1 and the like. Further, a heat radiating sheet 50 may be used instead of the heat radiating resin 5. Further, the adhesive 13 may be applied to the ring 14 side.

  FIG. 18 is a schematic diagram showing a state in which the mold 300 is closed and the liquid resin 9 is injected into the cavity of the mold 300 in the third embodiment.

  After the ring 14 is installed in the mold 300 as described above, the mold 300 is closed. Thereafter, as shown in FIG. 18, the liquid resin 9 is filled in a region in the cavity surrounded by the ring 14, the heat spreader 4, and the substrate 3. At this time, as in the case of the first embodiment, it is preferable to adjust each pressure so that the pressure inside the syringe 11 becomes larger than the pressure inside the cavity before the liquid resin 9 is injected. Other manufacturing processes are the same as those in the first embodiment.

  In the semiconductor device according to the third embodiment, the heat spreader 4 and the substrate 3 are connected via a metal member such as the ring 14. More specifically, the semiconductor device according to the third embodiment is integrally formed in the space between the substrate 3 and the heat spreader 4 so as to extend from the area around the semiconductor element 1 to the gap between the bumps 2. In addition to the resin part, a ring 14 is provided around the resin part. Therefore, the possibility of warping of the semiconductor device can be reduced more than the semiconductor device shown in FIG. Other configurations of the semiconductor device are the same as those in the first embodiment.

  As shown in FIG. 18, the ring 14 needs to be provided with a portion for receiving a nozzle used for injecting the liquid resin 9 into the cavity of the mold 300. In this portion, the heat spreader 4 and the substrate 3 may not be connected via the ring 14, but in other portions, the heat spreader 4 and the substrate 3 can be connected via the ring 14. This is effective in suppressing the warpage of the device.

  In the third embodiment, a step of installing the ring 14 in the mold 300 is required. However, it is only necessary to perform the process in a state where the mold 300 is opened after each work is installed in the mold 300. In the same manner as in the above, the process of injecting and curing the resin between the workpieces and the process of mounting the heat spreader equipped with the heat radiating resin or the heat radiating sheet on the semiconductor device can be performed using a mold of one semiconductor manufacturing apparatus. it can. Therefore, the same effect as in the first embodiment can be obtained.

(Embodiment 4)
Next, Embodiment 4 of the present invention will be described with reference to FIGS. FIG. 19 is a schematic diagram showing a state in which the first and second workpieces are installed in the mold 500 of the semiconductor manufacturing apparatus according to the fourth embodiment.

  As shown in FIG. 19, the mold 500 of the semiconductor manufacturing apparatus according to the fourth embodiment includes a lower mold 101, an upper mold 201, and a plurality of chip areas (resin sealing space for each semiconductor element 1). A plurality of decompression adsorption units 6 provided for each chip area, a runner (resin passage) 16 communicating with each chip area, a decompression device 12 communicating with the runner 16, and the runner 16. And a syringe 11 capable of supplying the liquid resin 9 to each chip area, a pressurizing device 17, and an air runner 18 connecting the pressurizing device 17 and the runner 16.

  In the semiconductor manufacturing apparatus of the fourth embodiment, since both the air and the liquid resin can be supplied to the runner 16, for example, between the syringe 11 and the upper mold 201, the decompressor 12 and the upper mold 201. In the meantime, it is preferable that an on-off valve such as an electromagnetic valve is previously installed between the pressurizing device 17 and the upper mold 201.

  In addition, about the structure other than the above shown by FIG. 19, and the structure which overlaps with the semiconductor manufacturing apparatus of Embodiment 1, the description in the case of Embodiment 1 is used.

  In the fourth embodiment, a first work including a substrate 3 on which a plurality of semiconductor elements 1 are flip-chip mounted on one main surface is placed on the lower mold 101. On the other hand, the second workpiece including the heat spreader 4 is installed for each region corresponding to each chip area in the upper mold 201. The second workpiece is held in the upper mold 201 by the reduced pressure adsorption unit 6. After each workpiece is placed on the lower mold 101 and the upper mold 201, the mold 500 is closed.

  After the mold 500 is closed, a liquid resin is injected into each chip area in the cavity of the mold 500. When injecting the liquid resin into each chip area, the liquid resin in the syringe 11 is pressurized so that the pressure in the syringe 11 is greater than the pressure in each chip area before the liquid resin is injected. By pressurizing the liquid resin in this way, a predetermined amount of the liquid resin can be efficiently supplied from the syringe 11 to each chip area.

  After filling the cavity with the liquid resin, the electromagnetic valve between the syringe 11 and the upper mold 201 is closed, and the pressurized air from the pressurizing device 17 is supplied to the air runner 18 and the runner 16, via these Each chip area may be pressurized. Thereby, the liquid resin in the chip area can be pressurized via the runner 16, and the air remaining in the liquid resin can be discharged to the outside of the chip area.

  Further, each chip area may be decompressed via the runner 16 using the decompression device 12 before the liquid resin is injected into the cavity. Thereby, the pressure difference between the pressure in each chip area and the pressure in the syringe 11 can be further increased, and the liquid resin can be injected into each chip area more efficiently.

  In addition, while the runner 16 and the air runner 18 are individually provided for each chip area, or an opening / closing valve is provided at an appropriate position of the runner 16, a part of the chip area can be pressurized by the pressurizing device 17. Thus, the remaining chip area may be decompressed by the decompression device 12.

  The semiconductor device according to the fourth embodiment includes a plurality of semiconductor elements 1 flip-chip mounted on a common substrate 3, a heat spreader 4 mounted on each semiconductor element 1 via a heat radiation resin 5, and a substrate 3. And a resin portion integrally formed so as to extend from a region around each semiconductor element 1 to a gap between the bumps 2 under each semiconductor element 1 in a space between each of the heat spreaders 4.

<Modification 1>
Next, Modification 1 of Embodiment 4 will be described with reference to FIG. FIG. 20 is a schematic view showing a state in which the mold 500 of the first modification is opened and the first and second workpieces are installed in the lower mold 101.

  As shown in FIG. 20, the configuration of the semiconductor manufacturing apparatus in Modification 1 is almost the same as that shown in FIG. Compared to the case shown in FIG. 19, in the first modification, the decompression device 12 is omitted, but the decompression device 12 may be installed.

  In the first modification, the second workpiece is temporarily fixed to the first workpiece while the mold 500 is opened. Other manufacturing methods are the same as those in the above-described fourth embodiment. Further, the structure of the semiconductor device of the first modification is the same as that of the above-described fourth embodiment.

<Modification 2>
Next, a second modification of the fourth embodiment will be described with reference to FIG. FIG. 21 is a schematic view showing a state in which the mold 500 of the second modification is opened and the first and second workpieces are installed in the lower mold 101. Note that the structure of the semiconductor manufacturing apparatus in the second modification is the same as that in the first modification described above.

  In the second modification, the semiconductor element (first semiconductor element) 1 in a bare chip state is flip-chip mounted on the substrate 3 of the second workpiece, and the semiconductor element is previously sealed with an insulating material such as resin. (Second semiconductor element) 19 is mounted using a bonding method other than flip-chip bonding. Further, the second workpiece is temporarily fixed to the first workpiece.

  Further, in the second modification, considering that the upper surface of each workpiece contacts the upper mold 201 when the mold 500 is closed, as shown in FIG. Adjust so that the heights are approximately the same.

  Furthermore, in the second modification, in addition to the underfill process for filling the gap between the semiconductor element 1 and the substrate 3, the first semiconductor element is surrounded by the heat spreader 4 and the substrate 3 around the semiconductor element 1. Liquid resin is also supplied to the gap, and for the second semiconductor element, the liquid resin is injected into the gap between the semiconductor element 19 and the substrate 3 and around the semiconductor element 19. The method for manufacturing the semiconductor device other than the above is the same as in the case of the first modification described above. The injection of the underfill resin under and around the sealing resin can be omitted.

  The semiconductor device according to the second modification has a plurality of semiconductor elements 1 flip-chip mounted on a common substrate 3 and terminals 40 and is mounted on the substrate 3 using a bonding method other than flip-chip bonding. One or a plurality of semiconductor elements 19, a heat spreader 4 mounted on each semiconductor element 1 via a heat-dissipating resin 5, and a space between the substrate 3 and each heat spreader 4 from a region around each semiconductor element 1 A first resin portion that is integrally formed so as to extend into the gap between the bumps 2 under each semiconductor element 1, and extends from the periphery of the semiconductor element 19 to the gap between the semiconductor element 19 and the substrate 3. And a second resin portion formed integrally with the.

<Modification 3>
Next, Modification 3 of Embodiment 4 will be described with reference to FIG. FIG. 22 is a schematic view showing a state in which the mold 500 of the third modification is opened and the first and second workpieces are installed on the lower mold 101 and the upper mold 201.

  In the third modification, a plurality of first workpieces and a plurality of second workpieces are installed in the lower mold 101 and the upper mold 201, respectively. In the example of FIG. 22, one semiconductor element 1 is mounted on one substrate 3, but the number of semiconductor elements 1 can be arbitrarily set. The lower mold 101 is provided with a plurality of recesses that can receive the respective substrates 3. Other configurations are the same as those in the fourth embodiment.

  The semiconductor device in Modification 3 includes a semiconductor element 1 that is flip-chip mounted on a plurality of substrates 3, a heat spreader 4 that is mounted on each semiconductor element 1 via a heat dissipation resin 5, a substrate 3, and each A space between the heat spreader 4 and a resin portion integrally formed so as to extend from a region around each semiconductor element 1 to a gap between the bumps 2 under each semiconductor element 1 is provided.

  In addition, in the above-mentioned Embodiment 4 and each modification, although the heat radiating resin 5 is used, you may use the heat radiating sheet 50 instead of the heat radiating resin 5. FIG. Further, the ring 14 described above may be arranged in each chip area.

  As described above, the embodiments and modifications of the present invention have been described, but it is also planned from the beginning to appropriately combine the configurations of the embodiments and modifications. In addition, it should be considered that the embodiment disclosed this time is illustrative and not restrictive in all respects. The scope of the present invention is defined by the terms of the claims, and is intended to include any modifications within the scope and meaning equivalent to the terms of the claims.

It is a flowchart which shows the outline | summary of the manufacturing process of the semiconductor device in each embodiment of this invention. It is the schematic which shows the structural example of the 1st and 2nd workpiece | work. It is the schematic which shows the state which installed the 1st and 2nd workpiece | work in the metal mold | die of the semiconductor manufacturing apparatus in Embodiment 1 of this invention. It is the schematic which shows the state which closed the metal mold | die shown in FIG. 3 and inject | poured resin in the cavity of a metal mold | die. It is the schematic which shows the state which hold | maintained the heat spreader in the automatic machine which can be used when apply | coating heat dissipation resin. It is the schematic which shows the state which reversed the heat spreader from the state shown in FIG. 5 in order to apply | coat heat dissipation resin to a heat spreader. It is the schematic which shows the state which has apply | coated the thermal radiation resin with respect to the heat spreader reversed from the state shown in FIG. 5 using another automatic machine. It is the schematic which shows the state which reversed the heat spreader which has finished apply | coating heat dissipation resin from the state shown in FIG. 7 in order to install in a metal mold | die. It is the schematic which shows the structural example of the 1st and 2nd workpiece | work at the time of using a thermal radiation sheet instead of thermal radiation resin. It is the schematic which shows the state which installed the 1st workpiece | work and the 2nd workpiece | work containing a thermal radiation sheet | seat in the metal mold | die of the semiconductor manufacturing apparatus in Embodiment 1 of this invention. It is the schematic which shows the state which closed the metal mold | die of FIG. 10 and inject | poured resin in the cavity of a metal mold | die. It is the schematic which shows the state which installed the 1st and 2nd workpiece | work in one metal mold | die in the state which opened the metal mold | die. It is the schematic which shows the semiconductor device which formed only underfill resin. It is the schematic which shows the semiconductor device manufactured using the manufacturing method of the semiconductor device in Embodiment 1 of this invention. It is the schematic which shows the state which closed the metal mold | die of the semiconductor manufacturing apparatus in Embodiment 2 of this invention, and inject | poured resin in the cavity of a metal mold | die. It is the schematic which shows the state which installed the 1st and 2nd workpiece | work in the metal mold | die of the semiconductor manufacturing apparatus in Embodiment 3 of this invention. It is the cross-sectional schematic diagram seen along the XVII-XVII line | wire of FIG. It is the schematic which shows the state which closed the metal mold | die shown in FIG. 16 and inject | poured resin in the cavity of a metal mold | die. It is the schematic which shows the state which installed the 1st and 2nd workpiece | work in the metal mold | die of the semiconductor manufacturing apparatus in Embodiment 4 of this invention. It is the schematic which shows the state which installed the 1st and 2nd workpiece | work in the metal mold | die of the semiconductor manufacturing apparatus in the modification 1 of Embodiment 4. FIG. It is the schematic which shows the state which installed the 1st and 2nd workpiece | work in the metal mold | die of the semiconductor manufacturing apparatus in the modification 2 of Embodiment 4. FIG. It is the schematic which shows the state which installed the 1st and 2nd workpiece | work in the metal mold | die of the semiconductor manufacturing apparatus in the modification 3 of Embodiment 4. FIG.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 Semiconductor element, 2 Bump, 3 Substrate, 4 Heat spreader, 5 Heat radiation resin, 6 Vacuum depressurization adsorption unit, 7 Sheet for exclusive use of peeling, 8 Seal ring, 9 Liquid resin, 9a, 9b Resin part, 11 Syringe, 12 Pressure reduction device, 13 Adhesion Agent, 14 ring, 15 nozzle insertion port, 16 runner, 17 pressurizer, 18 air runner, 19 semiconductor element already sealed with resin, 30 arm, 31 pin, 32 arm, 33 pin, 34 arm, 35 heat radiation resin syringe, 36 dispenser, 40 terminal, 100 lower mold, 101 lower mold, 200 upper mold, 201 upper mold, 300 mold, 400 suction hand, 410 heat radiation resin coating mechanism, 500 mold.

Claims (11)

A method of manufacturing a semiconductor device having a first portion including a semiconductor element flip-chip bonded on a substrate and a second portion including a heat dissipation portion,
Installing the first and second parts in a pair of molds that can be opened and closed;
Closing the pair of molds so that the first part and the second part are in close contact with each other;
Injecting a liquid resin into the space between the substrate and the heat dissipating part using a pressure difference with the pressure in the space;
And a step of curing the liquid resin by heating the liquid resin.   The method for manufacturing a semiconductor device according to claim 1, wherein in the step of curing the liquid resin, the liquid resin is heated in a pressurized state. The heat dissipating part includes a heat spreader, a heat dissipating sheet or a heat dissipating resin,
The step of installing the first and second parts in the mold includes
Placing the heat dissipation sheet or the liquid heat dissipation resin on one main surface of the heat spreader;
The method for manufacturing a semiconductor device according to claim 1, further comprising: placing the heat spreader on which the heat radiating sheet or the liquid heat radiating resin is disposed on the mold and placing the heat spreader on the semiconductor element. The heat dissipating part includes a heat spreader, a heat dissipating sheet or a heat dissipating resin,
The step of installing the first and second parts in the mold includes
2. The method of manufacturing a semiconductor device according to claim 1, further comprising a step of temporarily fixing the heat dissipation sheet or the liquid heat dissipation resin and the heat spreader to the semiconductor element in a state where the mold is opened. A syringe capable of supplying the liquid resin in the space is installed outside the mold,
5. The method according to claim 1, wherein in the step of injecting the liquid resin, the liquid resin is injected into the space by pressurizing the pressure inside the syringe to a pressure larger than the pressure in the space. 2. A method for manufacturing a semiconductor device according to item 1. Outside the mold, a syringe capable of supplying the liquid resin in the space, and a decompression device on the opposite side of the syringe are installed,
In the step of injecting the liquid resin, the liquid resin is injected into the space by reducing the pressure of the space to a pressure smaller than the pressure inside the syringe using the decompression device. 5. The method for manufacturing a semiconductor device according to claim 4. The semiconductor device includes the first portion including a plurality of the semiconductor elements and the plurality of second portions.
The step of installing the first and second parts in the mold includes a step of installing the first part including the plurality of semiconductor elements and the plurality of second parts in the mold. The manufacturing method of the semiconductor device of any one of 1-6. The semiconductor element includes a first semiconductor element flip-chip bonded to the substrate, and a second semiconductor element bonded to the substrate by a bonding method other than flip-chip bonding and sealed with an insulating material,
8. The liquid resin is injected into the gap between the first semiconductor element and the substrate and the gap between the second semiconductor element and the substrate in the step of injecting the liquid resin. A method for manufacturing a semiconductor device. A substrate,
A semiconductor element mounted on the substrate via a plurality of conductive bumps;
A heat dissipating member installed on the semiconductor element via a heat dissipating resin layer;
A semiconductor comprising a resin portion integrally formed in a space between the substrate and the heat dissipation member so as to extend from a region around the semiconductor element to a gap between the plurality of conductive bumps. apparatus.   The semiconductor device according to claim 9, wherein the resin portion is formed by curing a liquid resin filled in the space between the substrate and the heat dissipation member. A semiconductor manufacturing apparatus that can be used when manufacturing a semiconductor device having a semiconductor element flip-chip bonded on a substrate, a heat dissipation part, and a resin part,
A pair of molds that are openable and closable and that have a cavity capable of receiving a portion of the semiconductor device;
A heating unit capable of heating the mold;
A resin passage provided in the mold for supplying a liquid resin into the cavity;
A liquid resin supply unit capable of supplying the liquid resin into the cavity via the resin passage;
The semiconductor manufacturing apparatus provided with the heat insulation / cold insulation part which can insulate or cool the said liquid resin supply part from the surroundings.

Images