JPH07122703A - Resin-sealed semiconductor device and its manufacture - Google Patents

Abstract

PURPOSE:To prevent bonding wires from coming into contact or approaching each other and, at the same time, to increase the degree of integration of a semiconductor chip. CONSTITUTION:After mounting a semiconductor chip 34 on a die pad 32, the inner front end sections of inner leads 38 are connected to electrode pads 34a through bonding wires 40. The wires 40 are not used in spaces 42 and 44. Then they are put in a forming mold and a resin is injected into the mold from the direction shown by the arrow 46.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a resin-sealed semiconductor device and a method for manufacturing the same.

[0002]

2. Description of the Related Art A resin-sealed semiconductor device in which a semiconductor chip is sealed with a resin is widely used. FIG. 4 shows a schematic configuration of the resin-sealed semiconductor device, and FIG. 5 shows a schematic diagram of an X-ray transmission image of the resin-sealed semiconductor device shown in FIG. The resin-sealed semiconductor device 10 includes a die pad 12, a semiconductor chip 14 placed on the die pad 12, a bonding wire 18 made of an ultrafine wire connecting the electrode pad 14a and the inner lead 16 of the semiconductor chip 14, and Is formed of a resin-sealed package 20 and the like.

In manufacturing the resin-sealed semiconductor device 10, the semiconductor chip 14 is placed on the die pad 12,
The electrode pad 14a and the inner lead 16 are connected by a bonding wire 18, which is placed in a molding die, and the arrow 2
The resin is pressed in from the direction indicated by 2.

[0004]

In the resin-encapsulated semiconductor device 10 manufactured by the above method, as shown in FIG. 5, for example, the bonding wires 18a and 18b are in contact with or adjacent to the adjacent bonding wires. The present inventor has found out that It goes without saying that if the bonding wires come into contact with each other, a short circuit occurs and the reliability deteriorates. However, there is a problem that the leakage current flows even when they are close to each other and the reliability deteriorates. On the other hand, in order to prevent the bonding wires from contacting or coming close to each other, if the distance between the bonding wires adjacent to each other is sufficiently wide, the number of bonding wires that can be used will be reduced, and it will not be possible to cope with high integration of semiconductor chips. New problems arise.

In view of the above circumstances, it is an object of the present invention to provide a resin-encapsulated semiconductor device capable of preventing the bonding wires from coming into contact with each other and approaching each other, and capable of coping with high integration of semiconductor chips, and a method of manufacturing the same. .

[0006]

In order to achieve the above object, the present inventor has carried out various experiments and researches, and as a result, arranges a bonding wire at a specific position with respect to a resin pressure inlet into which a resin is pressed. If they do not, they have found that the above problems can be solved, and have completed the present invention. Specifically, in the resin-encapsulated semiconductor device of the present invention for achieving the above object, semiconductor chips wire-bonded between a plurality of inner leads arranged at a predetermined pitch around the four corners are respectively formed. In a resin-sealed semiconductor device arranged on a rectangular die pad in which a conductor extends from and sealed with a resin, a distance between the inner lead adjacent to the conductor and the conductor among the inner leads connected to a bonding wire, It is characterized in that it has an interval of not less than twice the predetermined pitch.

According to the method of manufacturing a resin-sealed semiconductor device of the present invention for achieving the above object, the conductors are arranged in rectangular die pads having conductors extending from the respective four corners, and the conductors are arranged at a predetermined pitch. A resin-sealed semiconductor device for manufacturing a resin-sealed semiconductor device by press-fitting a resin along a direction in which any one of the conductors extends toward a semiconductor chip wire-bonded with a plurality of inner leads In the method of manufacturing a static semiconductor device, a bonding wire is attached to an inner lead located at a position twice or more of the predetermined pitch on a downstream side of the resin press-fitting from a conductor extending in a direction intersecting a direction in which the resin is press-fitted. A resin-sealed semiconductor device is manufactured by connecting and press-fitting a resin.

[0008]

In the resin-encapsulated semiconductor device of the present invention, the inner lead adjacent to the conductor among the inner leads connected to the bonding wire and the conductor have a gap of at least twice the predetermined pitch. ing. In the place where the distance is more than twice the predetermined pitch, the distance that the wire is caused to flow by the flow of the press-fitted resin is long. Therefore, in this resin-sealed semiconductor device, it is possible to prevent the wires from coming into contact with each other and approaching each other, and the reliability is improved. Moreover, since the other parts have a predetermined pitch, high integration of the semiconductor chip can be dealt with.

Further, according to the method of manufacturing a resin-encapsulated semiconductor device of the present invention, the conductors extending in the direction intersecting with the direction in which the resin is press-fitted are provided at a predetermined pitch on the downstream side of the resin press-fitting.
Connect the bonding wire to the inner lead at a position more than twice as long, and press fit the resin. In a place having a distance equal to or more than twice the predetermined pitch, the distance that the wire is caused to flow by the flow of the resin that is press-fitted is long. Therefore, by arranging the wires with this interval and press-fitting the resin to seal the semiconductor chip etc. with the resin, it is possible to manufacture a resin-sealed semiconductor device in which the wires are not in contact with or close to each other, and the reliability is improved. To do. Moreover, since the other parts have a predetermined pitch, it is possible to cope with high integration of the semiconductor chip.

[0010]

Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a schematic diagram showing X-ray transmission of a resin-sealed semiconductor device. The resin-encapsulated semiconductor device 30 includes a rectangular die pad 32 and a semiconductor chip 34 placed on the die pad 32.
A plurality of electrode pads 34a are formed on the peripheral edge of the. The die pad 32 has four suspension pins 3 made of a conductor.
6a, 36b, 36c, 36d, and these hanging pins 36a, 36b, 36c, 36d extend substantially radially one by one from four corners on the extension line of the diagonal line of the die pad 32. A plurality of inner leads 38 are arranged around the die pad 32 at a predetermined pitch, and the inner tip portion of the inner lead 38 and the electrode pad 34 a facing the inner tip portion are provided with a plurality of bonding wires 40.
It is connected. These semiconductor chip 34, die pad 32, bonding wire 40, suspension pins 36a, 3
Part of 6b, 36c, 36d and inner lead 38
Is partially resin-sealed in the resin-sealed package to form the resin-sealed semiconductor device 30.

The characteristics of this resin-sealed semiconductor device 30 are as follows.
The point is that the spaces 42 and 44 are formed. Space 42
Is sandwiched between the hanging pin 36b and the bonding wire 40a.
The distance from a is twice or more the predetermined pitch.
In addition, the space 44 is sandwiched between the hanging pin 36d and the bonding wire 40b, and, like the space 42, the distance between the hanging pin 36d and the bonding wire 40b is at least twice the predetermined pitch.

Next, a method of manufacturing the resin-sealed semiconductor device 30 will be described. The semiconductor chip 34 is placed on the die pad 32, and the inner tip of the inner lead 38 and the electrode pad 34 are placed.
The bonding wire 40 is connected to a. Space 42,4
In No. 4, the bonding wire 40 is not connected. These are put into a molding die, and resin is press-fitted in the direction indicated by the arrow 46. In the place where these spaces 42 and 44 are formed, the distance that the bonding wire is caused to flow by the flow of the resin that is press-fitted is long. For this reason, in this space, resin is press-fitted without connecting the bonding wires to seal the semiconductor chip or the like with the resin, so that it is possible to manufacture a resin-sealed semiconductor device in which the bonding wires are not in contact with each other or close to each other. improves. Moreover, since it is not necessary to increase the distance between the bonding wires in other portions, it is possible to cope with high integration of the semiconductor chip.

The space 44 will be described with reference to FIG. FIG. 2 is an enlarged view showing a part of the resin-encapsulated semiconductor device shown in FIG. 1 in an enlarged manner, and the bonding wires are omitted here for the sake of simplicity. Space 4
4 is represented by a substantially parallelogram 44 in plan view, as indicated by the dashed line. The short side 44a of this parallelogram
Extends from the corner of the tip 34 along the edge of the side 34b of the tip 34, and the length thereof is about 11% of the length of the side 34. The long side 44b extends from the corner of the tip 34 to the hanging pin 36.
It extends along the distance d, and its length is the length obtained by subtracting the length of the inner lead 38 from the length of the hanging pin 36d plus about 1 mm.

Next, the wire flow rate in the resin-sealed semiconductor device 30 of the embodiment shown in FIG. 1 is compared with the wire flow rate in the conventional resin-sealed semiconductor device 10 shown in FIG. The results obtained are shown in FIG. Here, the wire flow rate X is
The distance between the line segment connecting the inner tip of the inner lead connected by the bonding wire and the electrode pad is set to L, and when the bonding wire is flowed by the press-fitting of the resin, the portion farthest from this line segment and this line segment. If the vertical distance is δ, then X = (δ / L) × 100. Therefore,
The smaller the value X, the shorter the distance the bonding wire is flown. The 1-pin wire is the bonding wire 18b (see FIG. 5), and
Wire is a bonding wire with which the bonding wire 18b is in contact. The 72-pin wire is the bonding wire 18a (see FIG. 5) and is 71 pi.
The wire of n is a bonding wire with which the bonding wire 18a is in contact. Rod-shaped line segments 50a, 50
b, 50c, 50d represent the wire flow rate in the conventional resin-sealed semiconductor device 10 shown in FIG. 5, while the rod-shaped line segments 60a, 60b represent the resin sealing of the embodiment shown in FIG. The wire flow rate in the semiconductor device 30 is shown.

As is apparent from FIG. 3, the spaces 42 and 44 are
It was found that the wire flow rate can be lowered by not arranging the bonding wire in (see FIG. 1), and the resin-sealed semiconductor device 30 is excellent in the wire flow.

[0016]

As described above, according to the present invention, since the bonding wire is not arranged at a specific position with respect to the resin pressure inlet into which the resin is press-fitted, it is possible to prevent the bonding wires from coming into contact with each other or coming close to each other. At the same time, high integration of semiconductor chips can be accommodated.

[Brief description of drawings]

FIG. 1 is an X diagram of a resin-encapsulated semiconductor device according to an embodiment of the present invention.
It is a schematic diagram showing a line transmission image.

FIG. 2 is an enlarged view showing a part of a resin-encapsulated semiconductor device of an embodiment of the present invention in an enlarged manner.

FIG. 3 is a graph showing a result of comparison between a wire flow rate in a resin-sealed semiconductor device of an example and a wire flow rate in a conventional resin-sealed semiconductor device.

FIG. 4 is a sectional view showing a schematic configuration of a conventional resin-sealed semiconductor device.

5 is a schematic diagram showing an X-ray transmission image of the resin-sealed semiconductor device shown in FIG.

[Explanation of symbols]

 30 Resin Sealing Type Semiconductor Device 32 Die Pad 34 Semiconductor Chip 34a Electrode Pad 36a, 36b, 36c, 36d Suspension Pin 38 Inner Lead

Claims (2)

[Claims] 1. A resin in which a semiconductor chip wire-bonded between a plurality of inner leads arranged at a predetermined pitch around the periphery is arranged on a rectangular die pad having conductors extending from four corners and resin-sealed. In the sealed semiconductor device, an inner lead adjacent to the conductor among the inner leads connected to a bonding wire and the conductor have a gap of at least twice the predetermined pitch. And a resin-encapsulated semiconductor device. 2. A semiconductor chip wire-bonded between a plurality of inner leads arranged on a rectangular die pad having conductors extending from each of the four corners and arranged at a predetermined pitch. In a method of manufacturing a resin-encapsulated semiconductor device, the resin-encapsulated semiconductor device is manufactured by press-fitting a resin along a direction in which any one of them extends, in a direction intersecting a direction in which the resin is press-fitted. A resin-encapsulated semiconductor device is manufactured by connecting a bonding wire to an inner lead at a position more than twice the predetermined pitch on the downstream side of the resin press-fit from the extended conductor and press-fitting the resin. And a method for manufacturing a resin-encapsulated semiconductor device.