JPH0695572B2 - Image sensor - Google Patents
Image sensorInfo
- Publication number
- JPH0695572B2 JPH0695572B2 JP61074153A JP7415386A JPH0695572B2 JP H0695572 B2 JPH0695572 B2 JP H0695572B2 JP 61074153 A JP61074153 A JP 61074153A JP 7415386 A JP7415386 A JP 7415386A JP H0695572 B2 JPH0695572 B2 JP H0695572B2
- Authority
- JP
- Japan
- Prior art keywords
- image sensor
- electrode
- vertical transfer
- horizontal
- charges
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
- H04N25/713—Transfer or readout registers; Split readout registers or multiple readout registers
Landscapes
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Solid State Image Pick-Up Elements (AREA)
Description
【発明の詳細な説明】 （産業上の利用分野） 本発明はイメージセンサーに関する。更に詳述すれば、
周知のCID（Charge injection device）に於る欠点を補
つて高感度が得られ、かつ高密度に集積できるイメージ
センサーに関する。The present invention relates to an image sensor. More specifically,
The present invention relates to an image sensor that can obtain high sensitivity by compensating for the drawbacks of the known CID (Charge injection device) and can be integrated at high density.
（従来技術） 従来より、エリア・イメージ・センサーとして、Ｘ−Ｙ
アドレス方式のCIDやILT（inter linetransfer）方式CC
DやETCCDが知られている。(Prior Art) Conventionally, XY has been used as an area image sensor.
Address method CID or ILT (inter line transfer) method CC
D and ETCCD are known.
CIDは、基本的に、各交点に近傍するMOS電極対がＸ−Ｙ
アドレスのマトリクスで構成されており、ＸおよびＹの
選択電極の下の反転層の中に入射光量に比例した像電荷
を蓄積し、ＸおよびＹが同時に指定された時のみこの電
荷を基板内に注入してビデオ信号として外部に取り出し
ている。In CID, the MOS electrode pairs near each intersection are basically XY
It is composed of a matrix of addresses, accumulates image charges proportional to the amount of incident light in the inversion layer under the X and Y selection electrodes, and charges these charges in the substrate only when X and Y are designated at the same time. It is injected and taken out as a video signal.
（発明が解決しようとする問題点） しかしながら、従来のCIDは受光部及び電荷注入部が同
じに形成されており、素子面がポリSiで覆われていたた
め、光の透過率の関係で感度が悪く、特に青の感度の低
下が全体の感度を制限していた。また、光電荷が基板内
に注入される再結合過程には数10〜数100μｓ程度かか
り、従つて連続して発生する電荷は隣りの画素へ拡散し
てクロストークを多く生じた。(Problems to be Solved by the Invention) However, in the conventional CID, the light-receiving portion and the charge-injecting portion are formed in the same manner, and the element surface is covered with poly-Si. Poorly, especially the decrease in blue sensitivity limited overall sensitivity. Also, the recombination process in which the photocharges are injected into the substrate takes about several tens to several hundreds of microseconds, so that the continuously generated charges are diffused to the adjacent pixels and a lot of crosstalk occurs.
一方、ILT方式は、水平画素数を多くすると高周波駆動
に限界が出るため、例えばデユアルチヤンネルCCDによ
り電荷を割り振つて読み出す等の方法が工夫された。し
かしこの方法は電荷の割り振りが複雑になるという欠点
を有した。On the other hand, in the ILT method, when the number of horizontal pixels is increased, the high frequency driving is limited. Therefore, for example, a method of allocating and reading out charges by a dual channel CCD was devised. However, this method has the drawback that charge allocation becomes complicated.
本発明の目的は、感度が向上できると共に水平解像力も
上昇できて高密度化が得られるイメージセンサーを提供
することにある。It is an object of the present invention to provide an image sensor which can improve sensitivity and horizontal resolution and can achieve high density.
（問題点を解決するための手段及び作用） すなわち、本発明の上記目的は、列方向に沿つて配列さ
れた複数個の受光素子及び垂直転送CCDが交互に配置さ
れており、前記垂直転送CCDの出力側にはゲート電極を
介しかつ水平転送制御部により走査されるMOS電極対か
らなるCIDが各素子列に対応して水平方向に配置され、
信号電荷が前記MOS電極対により基板内に注入されて読
み出されるイメージセンサーにより達成される。(Means and Actions for Solving Problems) That is, the above object of the present invention is to provide a plurality of light-receiving elements and vertical transfer CCDs arranged along the column direction, which are alternately arranged. On the output side of the CID, a CID consisting of a MOS electrode pair that is scanned by the horizontal transfer control unit through the gate electrode is arranged in the horizontal direction corresponding to each element row,
This is achieved by an image sensor in which signal charges are injected into the substrate and read by the MOS electrode pair.
（実施例） 以下、本発明によるイメージセンサーの実施例を図面に
基づいて詳説する。(Example) Hereinafter, an example of an image sensor according to the present invention will be described in detail with reference to the drawings.
第１図に示す１実施例は、受光部１及び垂直転送部２が
通常のインターラインCCD（ILCCD）と同一構成からなつ
ている。すなわち、列方向に沿つて配列された複数個の
受光素子からなる受光部と垂直転送CCDとが交互に配置
された構成を有しており、前記垂直転送CCDは４相駆動
される。In one embodiment shown in FIG. 1, the light receiving portion 1 and the vertical transfer portion 2 have the same structure as a normal interline CCD (ILCCD). That is, it has a configuration in which the light receiving portions composed of a plurality of light receiving elements arranged along the column direction and the vertical transfer CCDs are alternately arranged, and the vertical transfer CCDs are driven by four phases.
なお、図に於て、前記受光部１及び垂直転送部２は簡略
化したブロツクにより示されている。In the figure, the light receiving portion 1 and the vertical transfer portion 2 are shown by simplified blocks.
前記垂直CCDの出力端には水平方向に沿つて延びたMOS電
極対３が配置されている。前記MOS電極対３は各画素列
に共通のポリ・シリコン電極31と、各画素列毎に独立し
たポリ・シリコン電極32とからなり、前記各画素列毎に
独立した電極32は更にアルミ線４を介して水平シフトレ
ジスタ５と接続されている。At the output end of the vertical CCD, a MOS electrode pair 3 extending along the horizontal direction is arranged. The MOS electrode pair 3 comprises a poly-silicon electrode 31 common to each pixel column and a poly-silicon electrode 32 independent for each pixel column, and the electrode 32 independent for each pixel column is further made of an aluminum wire 4. It is connected to the horizontal shift register 5 via.
また、基板６には増幅器７を含む読み出し回路８が設け
られている。Further, the substrate 6 is provided with a readout circuit 8 including an amplifier 7.
第２図は、前述のMSO電極対３近傍が拡大して示されて
いる。すなわち、前記MOS電極対３はゲート電極９を介
して垂直転送部２の出力側に配置されている。また、図
中符号10で示す部分は前記垂直転送部２の転送電極を示
しており、各画素列はチヤンネル・ストツパ11により互
いに分離されている。FIG. 2 shows the vicinity of the above-mentioned MSO electrode pair 3 in an enlarged manner. That is, the MOS electrode pair 3 is arranged on the output side of the vertical transfer unit 2 via the gate electrode 9. Further, a portion indicated by reference numeral 10 in the drawing indicates a transfer electrode of the vertical transfer portion 2, and each pixel column is separated from each other by a channel stopper 11.
このように構成されたイメージセンサーは、露光される
と受光部１に被写体の像が結像され、被写体の輝度に対
応した電荷が得られる。受光部１に蓄積された信号電荷
は垂直ブランキング期間の一部で全画素がいつせいに垂
直転送CCDに転送される。When the image sensor configured as described above is exposed, an image of the subject is formed on the light receiving unit 1, and an electric charge corresponding to the brightness of the subject is obtained. The signal charges accumulated in the light receiving portion 1 are transferred to the vertical transfer CCD at all times in all the pixels during a part of the vertical blanking period.
なお、垂直転送CCDは従来と同様に入射光に感じないよ
うに遮光され、垂直転送中に光が混ざり合わないように
構成されている。垂直転送CCDに移動された信号電荷
は、テレビジヨンの標準走査の速度で、垂直方向に１走
査線分の信号が並列に順次下方に転送され、前記MOS電
極対３に送り込まれる。この際、前記ゲート電極９は導
通状態に設けられており、また、前記MOS電極対３はＨ
レベルに設けられて信号電荷が１つの電極31の下のポテ
ンシヤル井戸に蓄積される。次いで、前記ゲート電極９
が遮断されると同時に信号電荷を蓄積した電極31のみが
Ｌレベルに設けられて、信号電荷は他の電極32の下に移
動される。このような状態下に於て、前記電極32が水平
シフトレジスタ５により順次走査されると、電荷は基板
６内に注入され、これに対応して検出される電流は前記
読み出し回路８を介して１水平方向のビデオ信号として
取り出される。１水平走査が終了すると、再び前記MOS
電極対３はＨレベルに設けられて垂直転送CCDからの信
号電荷が送り込まれる。次いで信号電荷は前回同様に１
方の電極下に移動された後、基板内に注入され読み出さ
れる。Note that the vertical transfer CCD is shielded so as not to feel incident light as in the conventional case, and is configured so that the light is not mixed during the vertical transfer. The signal charge transferred to the vertical transfer CCD is transferred to the MOS electrode pair 3 at the standard scanning speed of the television, in which signals for one scanning line are vertically transferred in parallel in parallel. At this time, the gate electrode 9 is provided in a conductive state, and the MOS electrode pair 3 is H level.
A signal charge provided at the level is stored in the potential well below one electrode 31. Then, the gate electrode 9
Is blocked, and at the same time, only the electrode 31 accumulating the signal charge is provided at the L level, and the signal charge is moved below the other electrode 32. In such a state, when the electrodes 32 are sequentially scanned by the horizontal shift register 5, charges are injected into the substrate 6, and the current detected corresponding to the charges is passed through the readout circuit 8. It is taken out as one horizontal video signal. When one horizontal scan is completed, the MOS is again
The electrode pair 3 is provided at the H level and receives the signal charges from the vertical transfer CCD. Then the signal charge is 1 as before
After being moved under one of the electrodes, it is injected into the substrate and read.
第３図は上述のステツプを実現するための各電極の駆動
波形およびビデオ出力信号を示す図であり、１水平走査
期間の間に前記MOS電極対の１方の電極32が順次走査信
号により起動されて電荷が出力される様子を示してい
る。FIG. 3 is a diagram showing drive waveforms of each electrode and a video output signal for realizing the above-mentioned step. One electrode 32 of the MOS electrode pair is activated by a sequential scanning signal during one horizontal scanning period. The electric charges are output as a result.
なお、前記実施例では、通常使用される連続的に走査さ
れる水平シフト・レジスタを用いているが、代わりに適
当なデコーダによりランダムな順番で読み出すことも当
然できる。It should be noted that although the above-described embodiment uses the normally used horizontally scanned horizontal shift register, it is naturally possible to read out in a random order by an appropriate decoder instead.
（発明の効果） 以上記述したように、本発明のイメージセンサーによれ
ば、従来のCIDと異なり、受光部を通常のILCCDと同一に
構成して受光部上にポリSiを配置しないため、青色感度
の向上が得られると共に、カラー撮像デバイス設計の自
由度も大きい。また、同様にILCCDで構成され、各画素
列はチヤンネル・ストツパにより分離されかつ電荷がゲ
ート電極31を介して32に転送された後基板に注入されて
いるため、垂直クロストークは発生しない。更に水平転
送CCDや用いていないため、水平転送部による駆動周波
数や転送効率限界が緩和でき、水平方向に画素を高密度
に集積できて水平解像力を上げられる。(Effects of the Invention) As described above, according to the image sensor of the present invention, unlike the conventional CID, the light receiving part is configured in the same manner as a normal ILCCD, and the poly-Si is not arranged on the light receiving part. The sensitivity is improved, and the degree of freedom in designing the color imaging device is large. Similarly, each pixel column is composed of an ILCCD, and each pixel column is separated by a channel stopper and charges are transferred to 32 through the gate electrode 31 and then injected into the substrate, so that vertical crosstalk does not occur. Further, since the horizontal transfer CCD is not used, the drive frequency and transfer efficiency limit of the horizontal transfer unit can be relaxed, and pixels can be densely integrated in the horizontal direction to increase the horizontal resolution.
第１図は、本発明の１実施例によるイメージセンサーを
概念的に示した図、第２図は第１図の要部を拡大した
図、第３図は動作を説明するための図である。 １……受光部、２……垂直転送部、３……MOS電極対、
４……アルミ線、５……水平シフトレジスタ、６……基
板、７……増幅器、８……読み出し回路、９……ゲート
電極、10……転送電極、11……チヤンネル・ストツパFIG. 1 is a view conceptually showing an image sensor according to an embodiment of the present invention, FIG. 2 is an enlarged view of a main part of FIG. 1, and FIG. 3 is a view for explaining the operation. . 1 ... Light receiving part, 2 ... Vertical transfer part, 3 ... MOS electrode pair,
4 ... Aluminum wire, 5 ... Horizontal shift register, 6 ... Substrate, 7 ... Amplifier, 8 ... Readout circuit, 9 ... Gate electrode, 10 ... Transfer electrode, 11 ... Channel stop
Claims (1)
子及び垂直転送CCDが交互に配置されており、前記垂直
転送CCDの出力側にはゲート電極を介しかつ水平転送制
御部により走査されるMOS電極対からなるCIDが各素子列
に対応して水平方向に配置されたことを特徴とするイメ
ージセンサ。1. A plurality of light-receiving elements and vertical transfer CCDs arranged in the column direction are alternately arranged. The output side of the vertical transfer CCDs is scanned by a horizontal transfer control unit through a gate electrode. An image sensor in which CIDs formed of MOS electrode pairs are arranged horizontally corresponding to each element row.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61074153A JPH0695572B2 (en) | 1986-04-02 | 1986-04-02 | Image sensor |
| US07/033,376 US4763198A (en) | 1986-04-02 | 1987-04-02 | Interline transfer CCD sensor with a CID readout stage |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61074153A JPH0695572B2 (en) | 1986-04-02 | 1986-04-02 | Image sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62232157A JPS62232157A (en) | 1987-10-12 |
| JPH0695572B2 true JPH0695572B2 (en) | 1994-11-24 |
Family
ID=13538922
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61074153A Expired - Fee Related JPH0695572B2 (en) | 1986-04-02 | 1986-04-02 | Image sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0695572B2 (en) |
-
1986
- 1986-04-02 JP JP61074153A patent/JPH0695572B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62232157A (en) | 1987-10-12 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| LAPS | Cancellation because of no payment of annual fees |