JPH06950B2 - Ion plating device - Google Patents

Description

TECHNICAL FIELD The present invention relates to an ion plating apparatus for forming a thin film.

[Prior Art] FIG. 2 shows an example of a conventional ion plating apparatus. In this device, the evaporation material 2 is evaporated in the lower part of the bell jar 1, and the positively ionized evaporated substance is adhered to the substrate 3 arranged in the upper part of the bell jar 1 and to which a negative voltage is applied. is there. In this device, a scattering prevention wall 4 for preventing the scattering of the evaporation material is arranged outside the flow path of the evaporation material. The anti-scattering wall 4 is replaced or detached for cleaning when the evaporated substance has adhered to some extent.

[Problems to be Solved by the Invention] The conventional anti-scattering wall 4 has only a passive function of simply preventing the evaporation material from being scattered to the surroundings. Therefore, a large amount of the evaporated substance adheres to the anti-scattering wall, and therefore, the anti-scattering wall must be frequently replaced or cleaned, and the yield of vapor deposition material is low.

It is an object of the present invention to provide an ion plating device which eliminates the above-mentioned drawbacks of the conventional device.

[Means for Solving Problems] In order to solve the above problems, the present invention is characterized in that a positive voltage is applied to a scattering prevention wall arranged outside a flow path of an evaporated substance. There is.

[Operation] Since a positive voltage is applied to the anti-scattering wall, the positively ionized vaporized material receives a repulsive force from the anti-scattering wall.
Therefore, the adhesion of the evaporation material to the anti-scattering wall is reduced, and the evaporation material is concentrated and adhered to the substrate.

[Embodiment] An embodiment of the present invention will be described below with reference to FIG.

Reference numeral 1 in the figure is a bell jar whose upper portion is formed in a hemispherical shape. A crucible 5 containing the vapor deposition material 2 is provided in the lower part of the bell jar 1, and by operating the electron gun 6,
The vapor deposition material 2 in the crucible 5 is heated and evaporated. Reference numeral 7 denotes a discharge electrode, which generates a glow discharge between itself and the crucible 5 and positively ionizes the vaporized substance passing through the glow discharge.

On the other hand, a substrate 3 to which a negative voltage is applied is arranged in the upper part of the bell jar 1, and the inner surface of the hemispherical part of the bell jar 1 behind the bell jar 1 is provided with a protective material for preventing the evaporation substance from adhering to the inner surface of the bell jar 1. A dressing plate 8 is arranged. In this case, a positive voltage is applied to the deposition preventive plate 8.

In such a configuration, the vaporized substance flies toward the substrate 3, but a scattering prevention wall 4 for preventing the vaporized substance from scattering is provided outside the flow path through which the vaporized substance flows, as in the conventional device. Has been. The anti-scattering wall 4 has a cylindrical shape with an upper portion being recessed, and a positive voltage is applied thereto.
Reference numeral 9 is a shutter.

When operating the ion plating apparatus having the above configuration, first, the bell jar 1 is evacuated to a required degree of vacuum. Next, the electron gun 6 is operated to evaporate the vapor deposition material 2, and at the same time, a positive voltage is applied to the discharge electrode 7
Glow discharge is generated between the crucibles 5. Then, the vaporized material is positively ionized when passing through the glow discharge, attracted to the substrate 3 having a negative potential, and plated on the surface of the substrate 3.

At this time, not all of the evaporated substance is collected on the substrate 3, but adheres to the anti-scattering wall 4 until reaching the substrate 3, and further adheres to the deposition preventing plate 8. However, in this ion plating apparatus, since a positive voltage is applied to the anti-scattering wall 4 and the anti-adhesion plate 8, the positively ionized vaporized material receives a repulsive force from the anti-scattering wall 4 and the anti-adhesion plate 8. It comes to concentrate and adhere to the substrate 3. Then, the amount of the evaporated substance attached to the scattering prevention wall 4 and the deposition preventing plate 8 is reduced.

Although a positive voltage is applied to the deposition preventive plate 8 in the above embodiment, it is not always necessary to apply it.

[Effects of the Invention] According to the present invention, the following effects can be obtained.

The amount of evaporation material attached to the anti-scattering wall is reduced, and maintenance of the anti-scattering wall is facilitated.

The ionized vaporized substance is concentrated and adheres to the substrate, so that the adhesion efficiency is improved and the yield of the vapor deposition material is improved.

[Brief description of drawings]

FIG. 1 is a side sectional view showing an embodiment of the present invention, and FIG. 2 is a side sectional view showing a conventional example. 1 ... Bell jar, 2 ... Evaporation material, 3 ... Substrate, 4 ... Anti-scattering wall, 5 ... Crucible, 6 ...
Electron gun, 7 ... Discharge electrode, 8 ... Adhesion prevention plate, 9 ... Shutter.

Claims (1)

[Claims] 1. An ion plating apparatus for evaporating a material at one end of a bell jar and depositing a positively ionized evaporated substance on a substrate arranged at the other end of the bell jar and to which a negative voltage is applied. An ion plating apparatus comprising a scattering prevention wall for preventing scattering of an evaporation substance outside a flow path of the evaporation substance, wherein a positive voltage is applied to the scattering prevention wall.