JPS6196722A - Electron gun device - Google Patents

Electron gun device

Info

Publication number
JPS6196722A
JPS6196722A JP21811884A JP21811884A JPS6196722A JP S6196722 A JPS6196722 A JP S6196722A JP 21811884 A JP21811884 A JP 21811884A JP 21811884 A JP21811884 A JP 21811884A JP S6196722 A JPS6196722 A JP S6196722A
Authority
JP
Japan
Prior art keywords
raw material
substance
crucible
electron gun
evaporation source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP21811884A
Other languages
Japanese (ja)
Other versions
JPH0476203B2 (en
Inventor
Sumio Sakai
酒井　純朗
Shunichi Murakami
俊一 村上
Tetsuo Ishida
哲夫 石田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Anelva Corp
Original Assignee
Anelva Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Anelva Corp filed Critical Anelva Corp
Priority to JP21811884A priority Critical patent/JPS6196722A/en
Publication of JPS6196722A publication Critical patent/JPS6196722A/en
Publication of JPH0476203B2 publication Critical patent/JPH0476203B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Abstract

PURPOSE:To prevent the generation of impurities due to the sputtering using ionized evaporation substance and the bumping of high temperature fused substance by a method wherein the exposed surface of a crucible is coated by the raw material substance same as the raw material placed in the crucible. CONSTITUTION:The exposed surface of a crucible 6 is coated by the substance of raw material. The electron 2 emitted from a filament 1 is made to irradiate on an evaporation source raw material substance 4, and the generated ions come into collision with the evaporation source raw material substance provided covering the upper surface of the water-cooled crucible 6, the coating 9 on the upper surface of said material and a shield ring 8, and a sputtering phenomenon is generated. The spray generated by the ions and the bumping of fused material come into collision with the shield ring 8 formed by the evaporation source raw material and the upper surface coating 9, and the substance same as the evaporation material is released into vacuum atmosphere. As a result, the impurities generating from the electron gun and the circumference of an electron gun device can be suppressed effectively.

Description

【発明の詳細な説明】 （産業上の利用分野） 本発明は、真空中において、原材料物質を蒸発させ半導
体基板上に薄膜を堆積させるとき等に用いる電子銃装置
の改良に関するものである。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to an improvement in an electron gun device used for evaporating a raw material in a vacuum and depositing a thin film on a semiconductor substrate.

（従来技術とその問題点） この種の電子銃装置は、第１図（ａ図は正面断面図、ｂ
図は平面図）に示す様に、フィラメント１から放出され
る電子２が、礎石３の作る磁界で曲げられて蒸発源であ
るるつぼ６内に納められた衝撃によって蒸発源原材料物
質４が蒸発するものであるが、従来はこれと同時にその
物質の一部がイオン化され、そのイオンがるつぼ６やそ
の周辺の構造物をスパッタして不純物を放出し汚染の原
因になっていた。この不純物放出を防止する為に、るつ
ぼ６に水冷管５で冷却水を通して冷却を試みるつぼ中央
より散乱した電子の衝撃によって放出される不純物によ
る汚染の低減を計っていた。(Prior art and its problems) This type of electron gun device is shown in FIG.
As shown in the figure (the figure is a plan view), the electrons 2 emitted from the filament 1 are bent by the magnetic field created by the foundation stone 3 and placed in the crucible 6, which is the evaporation source.The impact causes the evaporation source material 4 to evaporate. However, in the past, a part of the substance was ionized at the same time, and the ions sputtered the crucible 6 and the surrounding structures, releasing impurities and causing contamination. In order to prevent this release of impurities, an attempt was made to reduce contamination due to impurities released by the impact of electrons scattered from the center of the crucible, which is attempted to be cooled by passing cooling water through the water cooling tube 5 into the crucible 6.

周囲にかなり広く散分散しており、電子の軌道２に妨害
を与えずにこのイオンの分散を防止するこ易い高温の溶
融体である為に、突沸で発生した飛沫が周囲へ落下した
ときに発生する不純物ガスもまた汚染の原因となってい
た。Because it is a high-temperature molten material that is dispersed quite widely in the surrounding area, and it is easy to prevent the dispersion of these ions without interfering with the electron trajectory 2, when the droplets generated by bumping fall to the surrounding area, The impurity gases generated were also a source of pollution.

以上の様な不具合があるため従来は、電子銃は不純物の
混入を特に嫌う分野では使用できない欠点があった。Due to the above-mentioned problems, electron guns have conventionally been disadvantageous in that they cannot be used in fields where contamination with impurities is particularly disliked.

（発明の目的） 本発明はこれらの問題を克服し、イオン化した蒸発物質
によるスパッタや高温溶融物の突沸による不純物の発生
を除去した電子銃装置の提供を巨木発明は、るつぼの露
出表面を、このるつぼ内に納められた原材料と同じ原材
料物質で被覆することＫよって前記目的を達成したもの
である。(Objective of the Invention) The present invention overcomes these problems and provides an electron gun device that eliminates the generation of impurities due to spatter caused by ionized evaporated substances and bumping of high-temperature melts. This objective is achieved by coating the crucible with the same raw material as the raw material contained in the crucible.

（実施例） 以下、本発明の実施例を図に基いて説明する。(Example) Embodiments of the present invention will be described below with reference to the drawings.

第２図（ａ図は正面断面図、ｂ図は平面図）は、　　本
発明の実施例であって、第１図と同じ機能の部材には同
じ符号を付しである。新かしく上面被覆９と、側面被覆
１０が設けられている。FIG. 2 (FIG. 2A is a front sectional view and FIG. B is a plan view) shows an embodiment of the present invention, and members having the same functions as those in FIG. 1 are given the same reference numerals. A new upper surface coating 9 and a side surface coating 10 are newly provided.

フィラメント１より放出された電子２は、磁石せるが、
蒸発源物質の少量はイオンとなって外へ放出される。こ
のイオンは水冷されたるつぼ６の上面を覆って設けられ
た蒸発源−原材料物質と同材料の上面被覆９及びシール
ド環８に衝突し、スパッタリング現象を起す。また上方
に散乱したイオンはフィラメント１に向う配線等の電界
に引き寄せられて側面被覆１０にも衝突する。Electrons 2 emitted from filament 1 create a magnet, but
A small amount of the evaporation source material is released as ions to the outside. These ions collide with the upper surface coating 9 of the same material as the evaporation source/raw material provided covering the upper surface of the water-cooled crucible 6, and the shield ring 8, causing a sputtering phenomenon. Further, the ions scattered upward are attracted by the electric field of the wiring or the like toward the filament 1 and collide with the side surface coating 10 as well.

また、蒸発源原材料物質４の溶融物の突沸の大半も電子
銃装置の周囲に散乱するが、これらは、シールド環８．
上面被覆９．側面被覆１０に捕捉される。Also, most of the bumping of the melt of the evaporation source raw material 4 is scattered around the electron gun device, and these are scattered around the shield ring 8.
Top surface coating9. captured in the side covering 10.

上記のような構造のため、イオン及び突沸による飛沫は
、結局すべて蒸発源原材料物質で作られたシールド環８
．上面被覆９．側面被覆１０と衝突し、蒸発物質と同一
の物質を真空内に放出することになる。従って、電子銃
及び電子銃装置周辺からの不純物発生を極めて抑制する
ことができる。Because of the structure described above, all of the ions and droplets due to bumping end up in the shield ring 8 made of the evaporation source raw material.
．． Top surface coating9. It collides with the side covering 10 and releases into the vacuum the same material as the evaporated material. Therefore, generation of impurities from around the electron gun and the electron gun device can be extremely suppressed.

最近、分子線エピタキシャル法によって真空中形 でシリコン表面に良質なシリコン膜をへ成することが試
みられているが、この場合は、従来の真空蒸着法に比較
して、極力不純物の少ない膜を得ることが肝要である。Recently, attempts have been made to form high-quality silicon films on silicon surfaces in vacuum using the molecular beam epitaxial method. It is important to obtain it.

この分野で、以上説明した実施例の電子銃装置を用いて
シリコン基板上にシリコン膜を形成したところ、従来法
で膜表面に発生した欠陥の数か１０ｃｍ　　オーダーで
ありたものが１０、ｃｍ　　オーダーになった。In this field, when a silicon film was formed on a silicon substrate using the electron gun device of the embodiment described above, the number of defects that occurred on the film surface using the conventional method was on the order of 10 cm, whereas the number of defects that occurred on the film surface was on the order of 10 cm. Became.

（発明の効果） 本発明は上述のとおりであって、電子の衝撃によって生
じたイオンによるスパッタリングや高温溶融物の突沸に
もとすく不純物の発生を抑制する効果が著るしい。(Effects of the Invention) The present invention is as described above, and has a remarkable effect of suppressing the generation of impurities against sputtering caused by ions caused by electron bombardment and bumping of high-temperature melts.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は従来の電子銃の正面断面図（、ａ）及び平面図
（ｂ）。第２図は本発明の実施例の同様の図である。 １・°゛フイラメント２・・・電子軌跡、３・・・磁石
。 ４・・・蒸発源原材料物質、５・−・水冷管。 ６・・・るつぼ、７・・・シールド壁、８・・・シール
ド環。 ９・・・上面被覆、１０・・・側面被覆。FIG. 1 is a front sectional view (a) and a plan view (b) of a conventional electron gun. FIG. 2 is a similar diagram of an embodiment of the invention. 1・°゛Filament 2...Electron trajectory, 3...Magnet. 4...Evaporation source raw material, 5...Water cooling pipe. 6... Crucible, 7... Shield wall, 8... Shield ring. 9...Top surface coating, 10...Side surface coating.

Claims (1)

【特許請求の範囲】[Claims] 真空中で、高電圧を用いて電子を加速し、この加速され
た電子で、るつぼ内に納められた原材料を照射して加熱
し、該原材料を蒸発させるようにした電子銃装置におい
て、該るつぼの露出表面を、あらかじめ該原材料の物質
で被覆したことを特徴とする電子銃装置。In an electron gun device that accelerates electrons using high voltage in a vacuum, and irradiates and heats a raw material contained in a crucible with the accelerated electrons, the raw material is evaporated. An electron gun device characterized in that the exposed surface of the is coated in advance with the material of the raw material.
JP21811884A 1984-10-17 1984-10-17 Electron gun device Granted JPS6196722A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21811884A JPS6196722A (en) 1984-10-17 1984-10-17 Electron gun device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21811884A JPS6196722A (en) 1984-10-17 1984-10-17 Electron gun device

Publications (2)

Publication Number Publication Date
JPS6196722A true JPS6196722A (en) 1986-05-15
JPH0476203B2 JPH0476203B2 (en) 1992-12-03

Family

ID=16714904

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21811884A Granted JPS6196722A (en) 1984-10-17 1984-10-17 Electron gun device

Country Status (1)

Country Link
JP (1) JPS6196722A (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4926181A (en) * 1972-07-04 1974-03-08
JPS511556U (en) * 1974-06-21 1976-01-08

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4926181A (en) * 1972-07-04 1974-03-08
JPS511556U (en) * 1974-06-21 1976-01-08

Also Published As

Publication number Publication date
JPH0476203B2 (en) 1992-12-03

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