JPH0685055A - Manufacture of semiconductor element - Google Patents

Abstract

PURPOSE:To prevent occurring of cracks by forming a resin film on the inner wall of a groove after the groove is provided along an estimated division border line of a pellet on the surface side of a silicon substrate, then the groove penetrated through to the rear side at the same time when the rear side of the silicon substrate is removed, for splitting into two pieces. CONSTITUTION:A groove 4 is provided along an estimated division border line of a pellet 3 an the formation-side of a pattern 2 of a silicon substrate 1. The inner wall of the groove 4 is stuck with a photo-curing resin, and then irradiated with laser beam, for formation of a resin film. A protective tape is bonded to the formation surface of the pattern 2 of the silicon substrate 1 before its rear side is ground, and further, a mounting tape is banded to the rear side and the protective tape is removed from the surface of silicon substrate 1. Then with a dicing device, grooves are carved in a grid pattern while corresponding to the pellet 3. Further, the rear side is ground and the groove 4 is made to penetrate through to the rear side of the silicon substrate 1 for separating pellets 3. Thus, occurrence of cracks is prevented for improved yield.

Description

Detailed Description of the Invention

 [Object of the Invention]

[0001]

BACKGROUND OF THE INVENTION The present invention relates to, for example, VLSI ( V e
ry L arge S cale I ntegrated
( Circuit) and the like.

[0002]

2. Description of the Related Art Generally, a substrate after element formation is divided into semiconductor element pellets as shown in FIGS. That is, first, the protective tape C for protecting the pattern B is attached to the surface side of the substrate A on which the pattern B is formed (see FIG. 8). Then, the back surface on which the pattern B is not formed is roughened by grinding (see FIG. 9). Further, the protective tape C is peeled off from the front surface of the substrate A, and another protective tape C1 is attached to the rear surface of the substrate A this time (FIG. 10).
reference). Then, by dicing, a groove D is formed on the surface of the substrate A along the contour of the pellet (see FIG. 11). At this time, the protective tape C1 is cut to a midpoint to obtain a plurality of pellets E ... Separated from each other. Then, cutting waste is removed by high-pressure jet cleaning with pure water in the dicing device. Further, by pushing up the pellets E ... from the protective tape C1 side in the mounting device, these pellets E ...
Separated from.

However, the conventional cleaning method after the dicing process can remove the cutting chips attached to the surface of the substrate A, but cannot remove the cutting chips in the groove D. In addition, there is a problem that "breakage" occurs on the side where the dicing is omitted, that is, on the back surface of the substrate A. Furthermore, when pushing up the pellets E ... from the protective tape C1 side in the mounting device,
Fragments due to the "cracking" are scattered and adhere to the surface of the pellets E ... However, as long as there are debris and cutting scraps in the dicing groove due to this "cracking", there is a high possibility that defects will occur, which is one of the causes of lowering the yield.

[0004]

As described above, in the conventional method of manufacturing a semiconductor element, fragments and cutting chips in the dicing groove are inevitably present due to "cracking" that accompanies cutting. However, these are one of the causes of the decrease in yield.

The present invention has been made in view of the above circumstances, and provides a method of manufacturing a semiconductor device which solves the technical problems of the above-described conventional method of manufacturing a semiconductor device and improves the yield. The purpose is to [Constitution of Invention]

[0006]

According to the method of manufacturing a semiconductor element of the present invention, a groove is formed on a surface side of a silicon substrate along a dividing boundary of a pellet, and then a resin film is formed on an inner wall surface of the formed groove. Is formed, and at the same time as the removal of the back surface of the silicon substrate by the back surface grinding step, the groove is communicated with the back surface to separate the silicon substrate into a plurality of pellets.

[0007]

According to the method of manufacturing a semiconductor device having the above structure, even if dicing chips remain on the inner wall surface of the groove, they are sealed and fixed by the resin film and separated from the silicon substrate into a plurality of pellets. It is possible to prevent "cracking" at the time of occurrence or "cracking" at the time of seating at the time of mounting, and it is possible to prevent yield reduction due to debris and dicing chips due to these "cracking".

[0008]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described in detail below with reference to the drawings.

1 to 7 show a method of manufacturing a semiconductor device according to this embodiment. This semiconductor element manufacturing method is
For example, on the side of the pattern 2 formation surface (surface of the silicon substrate 1) of the silicon substrate 1 having a thickness of 600 μm, along the planned dividing line of the pellets 3 ...
A grooving step of engraving the wafer with a dicing device (see FIG. 1), a cleaning step of cleaning and drying the silicon substrate 1 after the grooving step to remove polishing dust generated in the grooving step, and this cleaning step Later, a photo-curable resin R is attached to the inner wall surfaces of the grooves 4, and then a laser beam L is irradiated to form a resin film Z having a film thickness of 5 μm or less on the inner wall surfaces of the grooves 4 ,.
A resin film forming step (see FIGS. 2 and 3) of forming a V shape, and a protective tape 5 for protecting the pattern 2 is attached to the pattern 2 forming surface of the silicon substrate 1 after the resin film forming step. The protective tape attaching step (see FIG. 4) to be attached, and after the protective tape attaching step, the protective tape 5 side of the silicon substrate 1 is vacuum-sucked by a chuck to grind the back surface of the silicon substrate 1 and roughen the final processed surface. Surface back grinding step (see FIG. 5), a mounting tape sticking step (see FIG. 6) for sticking the mounting tape 6 to the back surface side of the silicon substrate 1 after this back grinding step, and this mounting tape After the attaching step, the protective tape 5 is peeled off from the surface side of the silicon substrate 1 (see FIG. 7), and after the protective tape peeling step, the mounting tape is mounted. A pellet mounting step (not shown) in which each of the pellets 3 integrally attached to the cap 6 is separately placed on a predetermined portion of a lead frame (not shown) by a push-up method separately from the mounting tape. ing. Then, in the grooving process, the size of the pellets 3 ...
mm) to form a grid. Depth D of each groove 4 ...
1 (for example, 220 μm) is, for example, 2 than the thickness T1 (for example, 200 μm) of the silicon substrate 1 after the back surface grinding step.
It is set so as to be increased by about 0 μm to 25 μm. On the other hand, the removal amount T2 in the back surface grinding step is
The sum of 2 and the thickness T1 of the silicon substrate 1 after the back surface grinding step is set to 400 μm, for example, so as to be equal to the thickness T3 of the silicon substrate 1 before processing. Therefore, after the back surface grinding step, the grooves 4 ... Open on the back surface side of the silicon substrate 1. As a result, the pellets 3 ... Are separated and are ready for separation. Further, the grinding wheel of the dicing device used in the grooving step contains, for example, diamond abrasive grains having a mesh size of # 2000 / # 3000, and has a cutting depth of 300 μm, for example.
Dicing is performed at a rotation speed of 5000 m / min. Further, the back surface grinding device is, for example, a machine for performing surface grinding with a cup-shaped grindstone in which diamond abrasive grains having a mesh size of # 1000 / # 1500 are bound by a vitrified binder. On the other hand, as the photocurable resin R in the resin film forming step, for example, “Solid Creator Resin” (trade name; manufactured by Nippon Synthetic Rubber Co., Ltd.) is diluted and used. Then, as shown in FIG. 3, the resin R is injected into the grooves 4 by a dispenser 8 having a needle-shaped nozzle 7. The amount of the resin R at this time is set to such an extent that the resin R adheres to the inner wall surfaces of the grooves 4 due to its surface tension. Further, as the laser light L shown in FIG. 4, for example, an ultraviolet laser is used. This laser light L is projected from a laser head 10 having a needle-shaped projector 9.

According to the method of manufacturing a semiconductor element of this embodiment, however, the resin film Z is formed on the inner wall surfaces of the grooves 4, so that the dicing chips remain on the inner wall surfaces of the grooves 4. Even if it is done, it is sealed and fixed by this resin film Z, and there is no adverse effect in the next process. In addition, in the grooving step, the grooves 4 are formed on the front surface side of the silicon substrate 1 along the planned dividing lines of the pellets 3 ...
Are engraved, and at the same time as the removal of the back surface of the silicon substrate 1 by the back surface grinding step, the grooves 4 ...
And the fact that the chip edge at the time of separation is suppressed by forming the resin film Z on the inner wall surface of the groove 4 so as to prevent the occurrence of "cracking". be able to. Further, in the pellet mounting process, the resin film Z also serves as a cushioning material against a seating impact during mounting, which helps prevent the occurrence of "cracking".

As the resin R used in the resin film forming step, an ultraviolet curable resin, an anaerobic resin or a usual coating resin may be used. Further, in the above-described embodiment, the resin R is formed on the inner wall surface of the groove 4 from the beginning, but first, the resin R is filled in the groove 4 ,.
After that, by irradiating with laser light, the resin R filling the center of the groove 4 may be evaporated to form the resin film Z. Alternatively, the resin R is sprayed in the groove 4
You may make it film-attach to the inner wall surface of.

[0012]

According to the method of manufacturing a semiconductor element of the present invention, since the resin film is formed on the inner wall surface of the groove, even if dicing chips remain on the inner wall surface of the groove, It is sealed and fixed by the resin film and does not adversely affect the next process. In addition, in the grooving step in advance, a groove is engraved on the front surface side of the silicon substrate along the planned dividing line of the pellet, and the groove is communicated with the back surface simultaneously with the removal of the back surface of the silicon substrate by the back surface grinding step,
In combination with the fact that the pellets are separated and the chip edge is held down by forming a resin film on the inner wall surface of the groove, the occurrence of "cracking" can be prevented. The occurrence of defects due to debris due to "cracking" is eliminated. Further, in the pellet mounting process, the resin film also serves as a cushioning material against a seating impact at the time of mounting, which helps prevent the occurrence of defects due to debris caused by “cracking”.

[Brief description of drawings]

FIG. 1 is a diagram showing a grooving step in a method for manufacturing a semiconductor device according to an embodiment of the present invention.

FIG. 2 is a diagram showing a resin film forming step of a method for manufacturing a semiconductor element according to an embodiment of the present invention.

FIG. 3 is a diagram showing a resin film forming step of a method for manufacturing a semiconductor device according to an embodiment of the present invention.

FIG. 4 is a diagram showing a protective tape attaching step of the method for manufacturing a semiconductor device according to an embodiment of the present invention.

FIG. 5 is a diagram showing a back surface grinding step of the method for manufacturing a semiconductor device according to the embodiment of the present invention.

FIG. 6 is a diagram showing a step of attaching a mounting tape in a method for manufacturing a semiconductor device according to an embodiment of the present invention.

FIG. 7 is a diagram showing a protective tape peeling step of a method for manufacturing a semiconductor device according to an embodiment of the present invention.

FIG. 8 is a diagram showing a protective tape attaching step of a conventional semiconductor element manufacturing method.

FIG. 9 is a diagram showing a backside grinding step of a conventional semiconductor element manufacturing method.

FIG. 10 is a diagram showing a protective tape attaching step of a conventional semiconductor element manufacturing method.

FIG. 11 is a diagram showing a groove processing step of a conventional method for manufacturing a semiconductor element.

[Explanation of symbols]

1: silicon substrate, 3: pellet, 4: groove, 5: protective tape, R: resin, Z: resin film.

Claims (1)

[Claims] 1. A grooving step of forming a bottomed groove in accordance with a pellet dividing schedule on a front surface side of a substrate, and a resin film forming step of forming a resin film on an inner wall surface of the groove after the grooving step.
A backside grinding step of holding the front surface side of the substrate after the resin film forming step and grinding the back surface side of the substrate in the back surface direction at least until the bottom of the groove is opened and the pellets are formed. A method for manufacturing a characteristic semiconductor device.