JPH0680761B2 - 半導体デバイス - Google Patents

半導体デバイス

Info

Publication number
JPH0680761B2
JPH0680761B2 JP63021821A JP2182188A JPH0680761B2 JP H0680761 B2 JPH0680761 B2 JP H0680761B2 JP 63021821 A JP63021821 A JP 63021821A JP 2182188 A JP2182188 A JP 2182188A JP H0680761 B2 JPH0680761 B2 JP H0680761B2
Authority
JP
Japan
Prior art keywords
conductor
current
conductors
semiconductor device
emitter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP63021821A
Other languages
English (en)
Japanese (ja)
Other versions
JPS63196068A (ja
Inventor
アルフレート、ポルスト
ゲルハルト、ミラー
マリオ、フエルトフオス
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Publication of JPS63196068A publication Critical patent/JPS63196068A/ja
Publication of JPH0680761B2 publication Critical patent/JPH0680761B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
    • H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0822—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0826—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in bipolar transistor switches
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00—Electrical arrangements for controlling or matching impedance
    • H10W44/501—Inductive arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07551—Connecting or disconnecting of bond wires characterised by changes in properties of the bond wires during the connecting
    • H10W72/07554—Connecting or disconnecting of bond wires characterised by changes in properties of the bond wires during the connecting changes in dispositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/5445—Dispositions of bond wires being orthogonal to a side surface of the chip, e.g. parallel arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/547—Dispositions of multiple bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/547—Dispositions of multiple bond wires
    • H10W72/5473—Dispositions of multiple bond wires multiple bond wires connected to a common bond pad
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Inverter Devices (AREA)
  • Power Conversion In General (AREA)
  • Electronic Switches (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
JP63021821A 1987-02-06 1988-02-01 半導体デバイス Expired - Lifetime JPH0680761B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE3703660.2 1987-02-06
DE3703660 1987-02-06

Publications (2)

Publication Number Publication Date
JPS63196068A JPS63196068A (ja) 1988-08-15
JPH0680761B2 true JPH0680761B2 (ja) 1994-10-12

Family

ID=6320406

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63021821A Expired - Lifetime JPH0680761B2 (ja) 1987-02-06 1988-02-01 半導体デバイス

Country Status (4)

Country Link
US (1) US4816984A (OSRAM)
EP (1) EP0278432B1 (OSRAM)
JP (1) JPH0680761B2 (OSRAM)
DE (1) DE3866718D1 (OSRAM)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0390872A (ja) * 1989-09-01 1991-04-16 Toshiba Corp 半導体装置
US4965710A (en) * 1989-11-16 1990-10-23 International Rectifier Corporation Insulated gate bipolar transistor power module
US5047914A (en) * 1989-11-21 1991-09-10 Sundstrand Corporation Current controlled inverter
US5025360A (en) * 1989-12-20 1991-06-18 Sundstrand Corporation Inverter switch with parallel free-wheel diodes
US5731970A (en) * 1989-12-22 1998-03-24 Hitachi, Ltd. Power conversion device and semiconductor module suitable for use in the device
JP2855816B2 (ja) * 1990-07-25 1999-02-10 三菱電機株式会社 半導体制御装置
FR2671241B1 (fr) * 1990-12-27 1997-04-30 Peugeot Circuit de commande d'un transistor de puissance utilise en commutation forcee.
EP0838855B1 (en) * 1991-09-20 2004-11-24 Hitachi, Ltd. Semiconductor module
TW214631B (OSRAM) * 1992-02-25 1993-10-11 American Telephone & Telegraph
DE59304797D1 (de) * 1992-08-26 1997-01-30 Eupec Gmbh & Co Kg Leistungshalbleiter-Modul
EP0584668B1 (de) * 1992-08-26 1996-12-18 eupec Europäische Gesellschaft für Leistungshalbleiter mbH & Co. KG Leistungshalbleiter-Modul
JPH06233554A (ja) * 1993-01-28 1994-08-19 Fuji Electric Co Ltd インバータ装置
US5687072A (en) * 1995-10-05 1997-11-11 Semipower Systems Low inductance inverter
DE19727548A1 (de) * 1997-06-28 1999-01-07 Bosch Gmbh Robert Elektronisches Steuergerät
DE10019812B4 (de) * 2000-04-20 2008-01-17 Infineon Technologies Ag Schaltungsanordnung
JP2003037245A (ja) * 2001-07-24 2003-02-07 Matsushita Electric Ind Co Ltd 半導体パッケージおよびその応用装置
DE10219760A1 (de) * 2002-05-02 2003-11-20 Eupec Gmbh & Co Kg Halbbrückenschaltung
DE10237561C1 (de) * 2002-08-16 2003-10-16 Semikron Elektronik Gmbh Induktivitätsarme Schaltungsanordnung bzw. Schaltungsaufbau für Leistungshalbleitermodule
DE10326321A1 (de) * 2003-06-11 2005-01-13 Compact Dynamics Gmbh Elektronische Baugruppe zum Schalten elektrischer Leistung
DE102004027186B3 (de) * 2004-06-03 2005-10-20 Eupec Gmbh & Co Kg Steuerkreis für ein elektrisches Modul
US7636613B2 (en) * 2005-07-01 2009-12-22 Curtiss-Wright Flow Control Corporation Actuator controller for monitoring health and status of the actuator and/or other equipment
CN102789970A (zh) * 2012-08-28 2012-11-21 南通明芯微电子有限公司 一种快恢复二极管芯片的制备方法
CN107851637B (zh) 2015-07-09 2020-06-05 三菱电机株式会社 功率半导体模块
DE102018109996B4 (de) * 2018-04-25 2020-06-04 Semikron Elektronik Gmbh & Co. Kg Leistungselektronische Schalteinrichtung
JP6541859B1 (ja) * 2018-11-01 2019-07-10 三菱電機株式会社 電力変換装置
DE102019112936A1 (de) * 2019-05-16 2020-11-19 Danfoss Silicon Power Gmbh Halbleitermodul
DE102020216506A1 (de) 2020-12-22 2022-06-23 Zf Friedrichshafen Ag Halbbrücke mit einer U- oder V-förmigen Anordnung von Halbleiterschaltelementen für einen elektrischen Antrieb eines Elektrofahrzeugs oder eines Hybridfahrzeugs, Leistungsmodul für einen Inverter und Inverter
DE102022203675A1 (de) 2022-04-12 2023-10-12 Robert Bosch Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung eines Leistungsmoduls sowie Leistungsmodul
DE102024105617A1 (de) 2024-02-28 2025-08-28 Semikron Danfoss GmbH Leistungselektronische Schalteinrichtung

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3909695A (en) * 1973-10-17 1975-09-30 Hewlett Packard Co Regulation and stabilization in a switching power supply
US4410935A (en) * 1981-03-23 1983-10-18 General Signal Corporation Current overload protection for inverter of uninterruptible power supply system
US4520255A (en) * 1982-06-22 1985-05-28 Crucible Societe Anonyme High frequency self-oscillating welding apparatus
US4447741A (en) * 1982-09-27 1984-05-08 Northern Telecom Limited Base drive circuit for power transistors
US4639823A (en) * 1983-12-27 1987-01-27 Fuji Electric Co., Ltd. Control circuit for switching transistors
DE3420535C2 (de) * 1984-06-01 1986-04-30 Anton Piller GmbH & Co KG, 3360 Osterode Halbleiter-Modul für eine schnelle Schaltanordnung
JPS6231377A (ja) * 1985-07-30 1987-02-10 Mitsubishi Electric Corp トランジスタインバ−タのベ−スドライブ回路

Also Published As

Publication number Publication date
EP0278432B1 (de) 1991-12-11
US4816984A (en) 1989-03-28
DE3866718D1 (OSRAM) 1992-01-23
JPS63196068A (ja) 1988-08-15
EP0278432A1 (de) 1988-08-17

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