JPH0680696B2 - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPH0680696B2
JPH0680696B2 JP60049787A JP4978785A JPH0680696B2 JP H0680696 B2 JPH0680696 B2 JP H0680696B2 JP 60049787 A JP60049787 A JP 60049787A JP 4978785 A JP4978785 A JP 4978785A JP H0680696 B2 JPH0680696 B2 JP H0680696B2
Authority
JP
Japan
Prior art keywords
semiconductor device
wire
hardness
electrode
copper wire
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60049787A
Other languages
Japanese (ja)
Other versions
JPS61208231A (en
Inventor
実保 弘田
一道 町田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP60049787A priority Critical patent/JPH0680696B2/en
Priority to KR1019860000462A priority patent/KR910005701B1/en
Priority to US06/824,744 priority patent/US4705204A/en
Priority to GB8602740A priority patent/GB2174032B/en
Priority to DE19863606224 priority patent/DE3606224A1/en
Priority to DE3645066A priority patent/DE3645066C2/de
Publication of JPS61208231A publication Critical patent/JPS61208231A/en
Priority to KR1019900000620A priority patent/KR900007053B1/en
Publication of JPH0680696B2 publication Critical patent/JPH0680696B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

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    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
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    • H—ELECTRICITY
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    • H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R43/00—Apparatus or processes specially adapted for manufacturing, assembling, maintaining, or repairing of line connectors or current collectors or for joining electric conductors
    • H01R43/02—Apparatus or processes specially adapted for manufacturing, assembling, maintaining, or repairing of line connectors or current collectors or for joining electric conductors for soldered or welded connections
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Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Description

【発明の詳細な説明】 〔産業上の利用分野〕 この発明は、半導体チップの電極とリードとを金属細線
によって結線して構成される半導体装置に関するもので
ある。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device configured by connecting electrodes and leads of a semiconductor chip with thin metal wires.

〔従来の技術〕[Conventional technology]

従来この種の半導体装置においては、ボンディング用金
属細線として金線が使用されているが、この場合コスト
が高くつくことと、シリコンチップ上のアルミ電極との
接合部の長期信頼性が低いという欠点を有するため、金
代わる材料及びそれらのボンディング技術等が種々検討
されている。Conventionally, in this type of semiconductor device, a gold wire is used as a thin metal wire for bonding, but in this case, the cost is high and the long-term reliability of the joint with the aluminum electrode on the silicon chip is low. Therefore, various alternative materials for gold and their bonding techniques have been studied.

〔発明の解決しようとする問題点〕[Problems to be Solved by the Invention]

ここで材料原価低減及び素子の長期信頼性向上という観
点から、金属細線を金から銅に代える場合について考え
る。金属細線を電極にボンディングする場合、良好な接
合状態を得るためには金属細線の硬さと電極の硬さとが
近似しているのが望ましい。従来の金線を用いる場合に
は半導体チップのアルミ電極の硬さはビッカース硬さで
Hv35〜40であるが、一般の銅線の硬さはビッカース硬さ
でHv60以上であり、従って一般の銅線をそのまま従来の
アルミ電極にボンディングしようとすると、ボンディン
グ性が悪いという問題が生じることとなる。Here, from the viewpoint of reducing the material cost and improving the long-term reliability of the element, consider the case where the metal thin wire is changed from gold to copper. When bonding a fine metal wire to an electrode, it is desirable that the hardness of the fine metal wire and the hardness of the electrode are similar to each other in order to obtain a good bonding state. When using a conventional gold wire, the hardness of the aluminum electrode of the semiconductor chip is Vickers hardness.
Is a H v 35-40, the hardness of the ordinary copper wire is at H v 60 or more in Vickers hardness, thus when trying to bond the ordinary copper wire as conventional aluminum electrodes, of poor bondability There will be problems.

この発明は以上のような問題点を解消するためになされ
たもので、銅線と電極との良好なボンディング性を得る
ことのできる半導体装置を提供することを目的としてい
る。The present invention has been made to solve the above problems, and an object of the present invention is to provide a semiconductor device capable of obtaining a good bonding property between a copper wire and an electrode.

〔問題点を解決するための手段〕[Means for solving problems]

この発明に係る半導体装置は、金属細線として純度99.9
9％以上の銅線を用い、一方半導体チップのアルミ電極
に極微量の金属，ガス等の不純物を混入するようにした
ものである。The semiconductor device according to the present invention has a purity of 99.9 as a metal thin wire.
9% or more of copper wire is used, while an extremely small amount of impurities such as metal and gas are mixed in the aluminum electrode of the semiconductor chip.

〔作用〕[Action]

この発明においては、99.99％以上の銅線はビッカース
硬さでHv50〜60の硬さを有し、極微量の不純物を混入し
たアルミ電極はビッカース硬さでHv45〜60の硬さを有す
るから、両者の硬さがほぼ近似することとなる。In the present invention, 99.99% of the copper wire has a hardness of H v 50-60 Vickers hardness, hardness of H v 45 to 60 are aluminum electrodes mixed with trace amounts of impurities in the Vickers hardness Therefore, the hardnesses of the two are approximately similar.

〔実施例〕〔Example〕

以下、本発明の実施例を図について説明する。 Embodiments of the present invention will be described below with reference to the drawings.

図面は本発明の一実施例による半導体装置を示す。図に
おいて、１は99.99％以上の高純度の銅線、２は半導体
チップ、３は半導体チップ２の表面に形成され、極微
量、例えば10ppm〜5000ppm（原子数ppm）の金属，ガス
等の不純物が混入されたアルミニウム電極、４はリード
であり、上記アルミニウム電極３とリード４とは例えば
超音波併用熱圧着方式により銅線１でもって相互に結線
されている。The drawings show a semiconductor device according to an embodiment of the present invention. In the figure, 1 is a high-purity copper wire of 99.99% or more, 2 is a semiconductor chip, 3 is formed on the surface of the semiconductor chip 2, and a trace amount, for example, 10 ppm to 5000 ppm (atomic ppm) of impurities such as metal and gas Aluminum electrodes 4 in which is mixed are leads, and the aluminum electrodes 3 and the leads 4 are connected to each other by a copper wire 1 by, for example, an ultrasonic combined thermocompression bonding method.

次に作用効果について説明する。Next, the function and effect will be described.

本装置においては、硬度がビッカー硬さでHv50〜60であ
る純度99.99％の銅ワイヤ１を用い、又アルミニウム電
極３に極微量の不純物を混入してその硬さをビッカース
硬さでHv45〜60としたので、両者の硬さが近似し、低い
超音波振動条件でもって充分な接合強度のボンディング
を安定に実現でき、これは本件発明者の実験によって確
認された。このことは、純度99.99％の銅線１が従来用
いられていた金線よりわずかに硬いことに対応してアル
ミニウム電極３の硬さを適度に高めたことにより、ボン
ディングの基本メカニズムである凝着現象がより促進さ
れたためであると考えられる。In this device, a copper wire 1 with a Vickers hardness of H v 50 to 60 and a purity of 99.99% is used, and a very small amount of impurities is mixed into the aluminum electrode 3 to determine its hardness as Vickers hardness. Since v is set to 45 to 60, the hardness of both is similar, and bonding with sufficient bonding strength can be stably realized under low ultrasonic vibration conditions, which was confirmed by experiments by the present inventors. This is because the copper wire 1 having a purity of 99.99% is slightly harder than the conventionally used gold wire, and the hardness of the aluminum electrode 3 is appropriately increased. It is considered that this is because the phenomenon was further promoted.

〔発明の効果〕〔The invention's effect〕

以上のように、本発明に係る半導体装置によれば、金属
細線として純度99.99％以上の銅線を用い、半導体チッ
プのアルミ電極に極微量の金属，ガス等の不純物を混入
し、両者の硬さを近似させるようにしたので、良好なボ
ンディング性を確保でき、金線に代えて銅線を使用する
ことが可能となる効果がある。As described above, according to the semiconductor device of the present invention, a copper wire having a purity of 99.99% or more is used as the metal fine wire, and an extremely small amount of impurities such as metal and gas are mixed in the aluminum electrode of the semiconductor chip to harden both of them. As a result, the good bonding property can be ensured and the copper wire can be used instead of the gold wire.

【図面の簡単な説明】[Brief description of drawings]

図面は本発明の一実施例による半導体装置の概略構成図
である。 １…銅線、２…半導体チップ、３…電極、４…リード。The drawing is a schematic configuration diagram of a semiconductor device according to an embodiment of the present invention. 1 ... Copper wire, 2 ... Semiconductor chip, 3 ... Electrode, 4 ... Lead.

Claims (1)

【特許請求の範囲】[Claims] 【請求項１】半導体チップの電極とリードとを金属細線
によって結線して構成される半導体装置において、上記
金属細線に99.99％以上の高純度の銅線を、上記半導体
チップ上の電極に極微量の金属，ガス等の不純物を混入
したアルミニウム薄膜を用いたことを特徴とする半導体
装置。1. A semiconductor device constituted by connecting an electrode of a semiconductor chip and a lead with a fine metal wire, wherein a high-purity copper wire of 99.99% or more is provided in the fine metal wire in an extremely small amount on the electrode on the semiconductor chip. A semiconductor device characterized by using an aluminum thin film mixed with impurities such as metal and gas.
JP60049787A 1985-03-01 1985-03-13 Semiconductor device Expired - Lifetime JPH0680696B2 (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP60049787A JPH0680696B2 (en) 1985-03-13 1985-03-13 Semiconductor device
KR1019860000462A KR910005701B1 (en) 1985-03-01 1986-01-24 Method of ball forming for wire bonding
US06/824,744 US4705204A (en) 1985-03-01 1986-01-31 Method of ball forming for wire bonding
GB8602740A GB2174032B (en) 1985-03-01 1986-02-04 Ball-type bonding wires for semiconductor devices and method for producing same
DE19863606224 DE3606224A1 (en) 1985-03-01 1986-02-26 BALL TYPE BOND WIRE FOR SEMICONDUCTOR DEVICES AND METHOD FOR THEIR PRODUCTION
DE3645066A DE3645066C2 (en) 1985-03-01 1986-02-26
KR1019900000620A KR900007053B1 (en) 1985-03-01 1990-01-19 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60049787A JPH0680696B2 (en) 1985-03-13 1985-03-13 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS61208231A JPS61208231A (en) 1986-09-16
JPH0680696B2 true JPH0680696B2 (en) 1994-10-12

Family

ID=12840868

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60049787A Expired - Lifetime JPH0680696B2 (en) 1985-03-01 1985-03-13 Semiconductor device

Country Status (1)

Country Link
JP (1) JPH0680696B2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04150044A (en) * 1990-10-12 1992-05-22 Nec Corp Semiconductor device
JP6455109B2 (en) * 2014-12-04 2019-01-23 富士電機株式会社 Semiconductor device and manufacturing method of semiconductor device

Also Published As

Publication number Publication date
JPS61208231A (en) 1986-09-16

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