JPH0677308A - Semiconductor manfacturing device - Google Patents
Semiconductor manfacturing deviceInfo
- Publication number
- JPH0677308A JPH0677308A JP22585892A JP22585892A JPH0677308A JP H0677308 A JPH0677308 A JP H0677308A JP 22585892 A JP22585892 A JP 22585892A JP 22585892 A JP22585892 A JP 22585892A JP H0677308 A JPH0677308 A JP H0677308A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- holding jig
- semiconductor substrate
- contact surface
- main surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Drying Of Semiconductors (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】この発明は、半導体製造装置、例
えばプラズマエッチング装置における半導体基板の固定
構造に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor manufacturing apparatus, for example, a semiconductor substrate fixing structure in a plasma etching apparatus.
【0002】[0002]
【従来の技術】図4は従来の半導体製造装置におけるウ
エハ固定構造を示す断面図であり、図において1は半導
体基板としてのウエハ、2は半導体製造装置内に配設さ
れウエハ1を載置する架台であり、この架台2には、ウ
エハ1の外径より大きめの凹部2aが形成されている。
3は架台2の凹部2a内に納められたウエハ1を固定す
る押え治具であり、この押え治具3はウエハ1の主面に
対して平行なリング状の接触面3aを有している。4は
架台2に穿設された孔5に接続された配管であり、配管
4および孔5を介して凹部2a内に気体を供給して、ウ
エハ1を押え治具3に押し当てられるように構成されて
いる。2. Description of the Related Art FIG. 4 is a cross-sectional view showing a wafer fixing structure in a conventional semiconductor manufacturing apparatus. In the figure, 1 is a wafer as a semiconductor substrate, and 2 is a wafer placed in the semiconductor manufacturing apparatus. The pedestal 2 is formed with a recess 2a larger than the outer diameter of the wafer 1.
Reference numeral 3 is a holding jig for fixing the wafer 1 housed in the recess 2a of the pedestal 2. The holding jig 3 has a ring-shaped contact surface 3a parallel to the main surface of the wafer 1. . Reference numeral 4 denotes a pipe connected to a hole 5 formed in the pedestal 2, so that gas is supplied into the recess 2a through the pipe 4 and the hole 5 so that the wafer 1 can be pressed against the holding jig 3. It is configured.
【0003】つぎに、上記従来の半導体製造装置の動作
について説明する。まず、その主面上に所望のパターン
形状を有するレジスト膜(図示せず)が形成されたウエ
ハ1を、主面を上にして架台2の凹部2a内に納める。
ついで、押え治具3をウエハ1上にセットし、配管4お
よび孔5を介して凹部2a内に気体を供給する。この
時、ウエハ1は、裏面側から供給される気体により、そ
の主面の外周部を押え治具3の接触面3aに押し当てら
れて、上下方向の移動が規制され、かつ、凹部2aによ
り横方向の移動が規制されて、半導体装置装置内に固定
される。その後、半導体製造装置内を所定ガス圧に設定
して、ウエハ1にプラズマエッチングが施される。Next, the operation of the above conventional semiconductor manufacturing apparatus will be described. First, the wafer 1 having a resist film (not shown) having a desired pattern formed on its main surface is placed in the recess 2a of the pedestal 2 with the main surface facing upward.
Then, the holding jig 3 is set on the wafer 1, and gas is supplied into the recess 2a through the pipe 4 and the hole 5. At this time, the wafer 1 is pressed against the contact surface 3a of the holding jig 3 by pressing the outer peripheral portion of the main surface of the wafer 1 with the gas supplied from the back surface side, and the vertical movement of the wafer 1 is restricted, and by the recess 2a. Lateral movement is restricted and fixed in the semiconductor device. After that, the inside of the semiconductor manufacturing apparatus is set to a predetermined gas pressure, and the wafer 1 is subjected to plasma etching.
【0004】[0004]
【発明が解決しようとする課題】従来の半導体製造装置
は以上のように、押え治具3のリング状の接触面3aに
ウエハ1の主面の外周部を押し当ててウエハ1を固定し
ているので、ウエハ1を固定する際に、ウエハ1の主面
に形成されているレジスト膜のパターンや配線のパター
ンを破壊したり、発塵させてウエハ1の表面を汚染する
という課題があった。また、上記課題を解決するため
に、ウエハ1の主面の周辺部のレジスト膜を除去するこ
とも考えられるが、レジスト膜を除去する機構をあらた
に設置する必要があり、さらにそのレジスト膜の除去範
囲を正確に制御する必要があり、作業効率が低下すると
いう課題もあった。As described above, the conventional semiconductor manufacturing apparatus fixes the wafer 1 by pressing the outer peripheral portion of the main surface of the wafer 1 against the ring-shaped contact surface 3a of the holding jig 3. Therefore, when fixing the wafer 1, there is a problem that the pattern of the resist film or the wiring pattern formed on the main surface of the wafer 1 is destroyed or dust is generated to contaminate the surface of the wafer 1. . Further, in order to solve the above problem, it is conceivable to remove the resist film on the peripheral portion of the main surface of the wafer 1, but it is necessary to newly install a mechanism for removing the resist film, and There is also a problem that it is necessary to accurately control the removal range, and work efficiency is reduced.
【0005】この発明は、上記のような課題を解決する
ためになされたもので、ウエハを固定する際に、押え治
具によりウエハ外周端面を押さえて、ウエハ主面のレジ
スト膜のパターンや配線のパターンの破壊を防止し、ま
た発塵をなくしてウエハ表面の汚染を防止する半導体製
造装置を得ることを目的とする。The present invention has been made to solve the above problems. When the wafer is fixed, the outer peripheral end face of the wafer is pressed by a holding jig to form a resist film pattern or wiring on the main surface of the wafer. It is an object of the present invention to obtain a semiconductor manufacturing apparatus which prevents the destruction of the pattern of (1) and eliminates dust generation to prevent contamination of the wafer surface.
【0006】[0006]
【課題を解決するための手段】この発明に係る半導体製
造装置は、架台上に載置された半導体基板を固定する押
え治具と、半導体基板と押え治具とを押し当てる加圧手
段とを備えた半導体製造装置において、押え治具は、半
導体基板の主面に対して傾斜している接触面を有し、加
圧手段により押え治具の接触面に半導体基板の外周端面
を押し当てて半導体基板を固定するものである。A semiconductor manufacturing apparatus according to the present invention comprises a holding jig for fixing a semiconductor substrate placed on a pedestal and a pressing means for pressing the semiconductor substrate and the holding jig. In the provided semiconductor manufacturing apparatus, the holding jig has a contact surface that is inclined with respect to the main surface of the semiconductor substrate, and the outer peripheral end surface of the semiconductor substrate is pressed against the contact surface of the holding jig by the pressing means. The semiconductor substrate is fixed.
【0007】[0007]
【作用】この発明においては、半導体基板を固定する際
に、半導体基板の主面に対して傾斜しいる押え治具の接
触面は、半導体基板の外周端面に当接することになり、
半導体基板の主面上に形成されているパターンの破壊お
よび損傷が防止され、またそれに起因する発塵もなく半
導体基板表面の汚染が防止される。さらに、押え治具の
接触面が半導体基板の主面に対して傾斜しているので、
半導体基板の外径や厚みのバラツキを吸収でき、半導体
基板を確実に固定することができる。According to the present invention, when the semiconductor substrate is fixed, the contact surface of the holding jig inclined with respect to the main surface of the semiconductor substrate comes into contact with the outer peripheral end surface of the semiconductor substrate.
It is possible to prevent the pattern formed on the main surface of the semiconductor substrate from being broken and damaged, and to prevent contamination of the surface of the semiconductor substrate without causing dust. Furthermore, since the contact surface of the holding jig is inclined with respect to the main surface of the semiconductor substrate,
Variations in outer diameter and thickness of the semiconductor substrate can be absorbed, and the semiconductor substrate can be reliably fixed.
【0008】[0008]
【実施例】以下、この発明の実施例を図について説明す
る。 実施例1.図1はこの発明の実施例1を示す半導体製造
装置におけるウエハ固定構造の断面図、図2は図1の要
部拡大断面図であり、図において図4に示した従来の半
導体製造装置と同一または相当部分には同一符号を付
し、その説明を省略する。図において、6は架台2の凹
部2a内に納められたウエハ1を固定する押え治具であ
り、この押え治具6は、凹部2aの外周の架台2表面に
接触するリング状の当接面6aと、この当接面6aの内
周壁端面に傾斜をもって形成された接触面6bとから構
成されている。Embodiments of the present invention will be described below with reference to the drawings. Example 1. 1 is a sectional view of a wafer fixing structure in a semiconductor manufacturing apparatus showing Embodiment 1 of the present invention, and FIG. 2 is an enlarged sectional view of an essential part of FIG. 1, which is the same as the conventional semiconductor manufacturing apparatus shown in FIG. Alternatively, the corresponding parts are designated by the same reference numerals, and the description thereof will be omitted. In the figure, 6 is a holding jig for fixing the wafer 1 housed in the recess 2a of the pedestal 2. The holding jig 6 is a ring-shaped contact surface that contacts the surface of the pedestal 2 on the outer periphery of the recess 2a. 6a, and a contact surface 6b formed with an inclination on the inner peripheral wall end surface of the contact surface 6a.
【0009】つぎに、上記実施例1の動作について説明
する。まず、その主面上に所望のパターン形状を有する
レジスト膜が形成されたウエハ1を、主面を上にして架
台2の凹部2a内に納める。ついで、凹部2aを包囲す
るようにリング状の当接面6aを架台2に当接させて、
押え治具6をセットし、配管4および孔5を介して凹部
2a内に気体を供給する。ウエハ1は、裏面側から供給
される気体により押し上げられ、その外周端面が押え治
具6の接触面6aに押し当てられて、上下方向の移動が
規制され、かつ、凹部2aにより横方向の移動が規制さ
れて、半導体製造装置内に固定される。その後、半導体
製造装置内を所定ガス圧に設定して、ウエハ1にプラズ
マエッチングが施される。Next, the operation of the first embodiment will be described. First, the wafer 1 having a resist film having a desired pattern formed on its main surface is placed in the recess 2a of the pedestal 2 with the main surface facing upward. Then, the ring-shaped contact surface 6a is brought into contact with the pedestal 2 so as to surround the recess 2a,
The holding jig 6 is set, and gas is supplied into the recess 2a through the pipe 4 and the hole 5. The wafer 1 is pushed up by the gas supplied from the back surface side, the outer peripheral end face thereof is pressed against the contact surface 6a of the holding jig 6, its vertical movement is restricted, and the wafer 2 is moved laterally by the concave portion 2a. Are regulated and fixed in the semiconductor manufacturing apparatus. After that, the inside of the semiconductor manufacturing apparatus is set to a predetermined gas pressure, and the wafer 1 is subjected to plasma etching.
【0010】このように、上記実施例1によれば、押え
治具6は、ウエハ1の主面に対して傾斜している接触面
6bを有し、ウエハ1の裏面から供給される気体の押し
上げ力により接触面6bにウエハ1の外周端面を押し当
てて固定しているので、接触面6bはウエハ1の外周端
面と円周上で線接触することになり、押え治具6がウエ
ハ1の主面に接触することがなく、ウエハ1の固定の際
の、主面に形成されたレジスト膜のパターンや配線のパ
ターンの破壊や損傷を防止することができる。その結
果、レジスト膜のパターンや配線のパターンの破壊や損
傷にともなう発塵がなく、ウエハ1の表面が汚染される
こともなく、パターン欠陥が減少して歩留まりを向上す
ることができる。As described above, according to the first embodiment, the holding jig 6 has the contact surface 6b which is inclined with respect to the main surface of the wafer 1, and the gas supplied from the back surface of the wafer 1 Since the outer peripheral end surface of the wafer 1 is pressed against and fixed to the contact surface 6b by the pushing-up force, the contact surface 6b comes into line contact with the outer peripheral end surface of the wafer 1 on the circumference, and the pressing jig 6 moves the wafer 1 It is possible to prevent the resist film pattern and the wiring pattern formed on the main surface from being destroyed or damaged when the wafer 1 is fixed, without contacting the main surface. As a result, no dust is generated due to the breakage or damage of the resist film pattern or the wiring pattern, the surface of the wafer 1 is not contaminated, and pattern defects are reduced to improve the yield.
【0011】また、押え治具6の接触面6bがウエハ1
の主面に対して傾斜して形成されているので、例えウエ
ハ1の外径や厚みにバラツキがあっても、ウエハ1の外
周端面の接触面6bの接触位置がずれるだけで、確実に
固定できる。Further, the contact surface 6b of the holding jig 6 is the wafer 1
Since it is formed so as to be inclined with respect to the main surface of the wafer 1, even if the outer diameter or thickness of the wafer 1 varies, the contact position of the contact surface 6b of the outer peripheral end surface of the wafer 1 is displaced, and the wafer 1 is securely fixed. it can.
【0012】ここで、接触面6bの厚みdは、ウエハ1
の大きさによって変わり、例えばウエハ1の外径のバラ
ツキを±1%とすると、5インチウエハの場合2.5m
m以上、6インチウエハの場合3mm以上にする必要が
ある。Here, the thickness d of the contact surface 6b is determined by the wafer 1
If the variation of the outer diameter of the wafer 1 is ± 1%, it is 2.5 m for a 5-inch wafer.
m or more, 3 mm or more for a 6 inch wafer.
【0013】さらに、ウエハ1の大きさ、厚みおよびそ
れらのバラツキを考慮して、接触面6bの斜面部分の長
さを2〜十数mm、その傾斜角度をウエハ1の主面に対
して20〜70°とするとよい。Further, in consideration of the size and thickness of the wafer 1 and their variations, the length of the inclined surface portion of the contact surface 6b is 2 to several tens of mm, and its inclination angle is 20 with respect to the main surface of the wafer 1. It is good to set it to 70 degrees.
【0014】実施例2.図3はこの発明の実施例2を示
す半導体製造装置におけるウエハ固定構造の断面図であ
り、図において7はウエハ1を載置する架台、8は架台
7に軸着され、一端側にウエハ1との接触面8aが形成
され、他端側に加圧手段としてのバネ9が取り付けられ
た押え治具であり、この押え治具8は、架台7に載置さ
れたウエハ1を包囲するようにウエハ1の4方に設置さ
れている。Example 2. 3 is a sectional view of a wafer fixing structure in a semiconductor manufacturing apparatus showing a second embodiment of the present invention. In the figure, 7 is a pedestal on which the wafer 1 is placed, 8 is rotatably mounted on the pedestal 7, and the wafer 1 is mounted on one end side. Is a holding jig having a contact surface 8a formed with and a spring 9 as a pressing means attached to the other end side. The holding jig 8 surrounds the wafer 1 placed on the pedestal 7. Are installed on four sides of the wafer 1.
【0015】上記実施例2では、まず、押え治具8をバ
ネ9の付勢力に抗して押し広げて、架台7上にウエハ1
を載置する。その後、バネ9の付勢力により押え治具8
の接触面8aをウエハ1の外周端面に押し当てることに
より、ウエハ1を架台7に固定している。In the second embodiment, first, the holding jig 8 is spread out against the urging force of the spring 9, and the wafer 1 is placed on the pedestal 7.
To place. After that, the pressing jig 8 is pressed by the biasing force of the spring 9.
The wafer 1 is fixed to the pedestal 7 by pressing the contact surface 8 a of the above to the outer peripheral end surface of the wafer 1.
【0016】このように、上記実施例2によれば、架台
7に載置されたウエハ1の主面に対して傾斜している押
え治具8の接触面8aを、バネ9の付勢力によりウエハ
1の外周端面に押し当てて固定しているので、接触面8
aはウエハ1の外周端面と円周上で線接触することにな
り、上記実施例1と同様の効果を奏する。As described above, according to the second embodiment, the contact surface 8a of the holding jig 8 tilted with respect to the main surface of the wafer 1 placed on the pedestal 7 is urged by the spring 9. Since the outer peripheral end surface of the wafer 1 is pressed and fixed, the contact surface 8
Since a comes into line contact with the outer peripheral end face of the wafer 1 on the circumference, the same effect as that of the first embodiment is obtained.
【0017】なお、上記各実施例では、プラズマエッチ
ング装置に適用するものとして説明していが、この発明
はこれに限らず、装置内でウエハ1を固定して処理する
半導体製造装置であれば適用できることは言うまでもな
いことである。Although the above embodiments have been described as being applied to a plasma etching apparatus, the present invention is not limited to this and is applicable to any semiconductor manufacturing apparatus in which the wafer 1 is fixed and processed in the apparatus. It goes without saying that you can do it.
【0018】[0018]
【発明の効果】以上のようにこの発明によれば、架台上
に載置された半導体基板を固定する押え治具と、半導体
基板と押え治具とを押し当てる加圧手段とを備えた半導
体製造装置において、押え治具は、半導体基板の主面に
対して傾斜している接触面を有し、加圧手段により押え
治具の接触面に半導体基板の外周端面を押し当てて半導
体基板を固定しているので、半導体基板はその主面が押
え治具と接触することなく固定され、半導体基板の主面
での発塵がなく、パターン欠陥が減少して、歩留まりを
向上できる半導体製造装置が得られる効果がある。As described above, according to the present invention, the semiconductor provided with the holding jig for fixing the semiconductor substrate placed on the frame and the pressing means for pressing the semiconductor substrate and the holding jig against each other. In the manufacturing apparatus, the holding jig has a contact surface that is inclined with respect to the main surface of the semiconductor substrate, and the outer peripheral end surface of the semiconductor substrate is pressed against the contact surface of the holding jig by the pressing means to hold the semiconductor substrate. Since the semiconductor substrate is fixed, the main surface of the semiconductor substrate is fixed without coming into contact with the pressing jig, dust is not generated on the main surface of the semiconductor substrate, pattern defects are reduced, and the yield is improved. There is an effect that can be obtained.
【図1】この発明の実施例1を示す半導体製造装置にお
けるウエハ固定構造の斜視図である。FIG. 1 is a perspective view of a wafer fixing structure in a semiconductor manufacturing apparatus showing a first embodiment of the present invention.
【図2】この発明の実施例1を示す半導体製造装置にお
けるウエハ固定構造の要部拡大斜視図である。FIG. 2 is an enlarged perspective view of an essential part of the wafer fixing structure in the semiconductor manufacturing apparatus showing the first embodiment of the present invention.
【図3】この発明の実施例2を示す半導体製造装置にお
けるウエハ固定構造の斜視図である。FIG. 3 is a perspective view of a wafer fixing structure in a semiconductor manufacturing apparatus showing Embodiment 2 of the present invention.
【図4】従来の半導体製造装置におけるウエハ固定構造
を示す斜視図である。FIG. 4 is a perspective view showing a wafer fixing structure in a conventional semiconductor manufacturing apparatus.
1 ウエハ(半導体基板) 2 架台 4 配管(加圧手段) 5 孔(加圧手段) 6 押え治具 6b 接触面 7 架台 8 押え治具 8a 接触面 9 バネ(加圧手段) 1 Wafer (Semiconductor Substrate) 2 Stand 4 Piping (Pressure Means) 5 Holes (Pressure Means) 6 Holding Jig 6b Contact Surface 7 Stand 8 Holding Jig 8a Contact Surface 9 Spring (Pressure Means)
Claims (1)
る押え治具と、前記半導体基板と前記押え治具とを押し
当てる加圧手段とを備えた半導体製造装置において、前
記押え治具は、前記半導体基板の主面に対して傾斜して
いる接触面を有し、前記加圧手段により前記押え治具の
前記接触面に前記半導体基板の外周端面を押し当てて前
記半導体基板を固定することを特徴とする半導体製造装
置。1. A holding jig for a semiconductor manufacturing apparatus, comprising: a holding jig for fixing a semiconductor substrate placed on a pedestal; and a pressing means for holding the semiconductor substrate and the holding jig against each other. Has a contact surface inclined with respect to the main surface of the semiconductor substrate, and fixes the semiconductor substrate by pressing the outer peripheral end surface of the semiconductor substrate against the contact surface of the holding jig by the pressing means. A semiconductor manufacturing apparatus characterized by:
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP22585892A JPH0677308A (en) | 1992-08-25 | 1992-08-25 | Semiconductor manfacturing device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP22585892A JPH0677308A (en) | 1992-08-25 | 1992-08-25 | Semiconductor manfacturing device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH0677308A true JPH0677308A (en) | 1994-03-18 |
Family
ID=16835954
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP22585892A Pending JPH0677308A (en) | 1992-08-25 | 1992-08-25 | Semiconductor manfacturing device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0677308A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2017163849A1 (en) * | 2016-03-22 | 2017-09-28 | 株式会社荏原製作所 | Substrate holder and plating device |
-
1992
- 1992-08-25 JP JP22585892A patent/JPH0677308A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2017163849A1 (en) * | 2016-03-22 | 2017-09-28 | 株式会社荏原製作所 | Substrate holder and plating device |
KR20180124039A (en) * | 2016-03-22 | 2018-11-20 | 가부시키가이샤 에바라 세이사꾸쇼 | Substrate holder and plating device |
TWI685056B (en) * | 2016-03-22 | 2020-02-11 | 日商荏原製作所股份有限公司 | Substrate holder and plating device |
US11015261B2 (en) | 2016-03-22 | 2021-05-25 | Ebara Corporation | Substrate holder and plating apparatus |
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