JPH0656491B2 - Photosensitive silicone resin composition - Google Patents

Photosensitive silicone resin composition

Info

Publication number
JPH0656491B2
JPH0656491B2 JP58132177A JP13217783A JPH0656491B2 JP H0656491 B2 JPH0656491 B2 JP H0656491B2 JP 58132177 A JP58132177 A JP 58132177A JP 13217783 A JP13217783 A JP 13217783A JP H0656491 B2 JPH0656491 B2 JP H0656491B2
Authority
JP
Japan
Prior art keywords
photosensitive
resin composition
silicone resin
polysiloxane
compound
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58132177A
Other languages
Japanese (ja)
Other versions
JPS6024543A (en
Inventor
俊一郎 内村
任廷 佐藤
大輔 牧野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Showa Denko Materials Co Ltd
Original Assignee
Hitachi Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Chemical Co Ltd filed Critical Hitachi Chemical Co Ltd
Priority to JP58132177A priority Critical patent/JPH0656491B2/en
Publication of JPS6024543A publication Critical patent/JPS6024543A/en
Publication of JPH0656491B2 publication Critical patent/JPH0656491B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/075Silicon-containing compounds
    • G03F7/0757Macromolecular compounds containing Si-O, Si-C or Si-N bonds

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  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Compositions Of Macromolecular Compounds (AREA)

Description

【発明の詳細な説明】 本発明は新規な感光性シリコーン樹脂組成物に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a novel photosensitive silicone resin composition.

感光性シリコーン樹脂の製造法としては 1)水酸基を有するポリシロキサンにメタクリル基を有す
るアルコキシシランを反応させる方法(特開昭49−3
9200号公報) 2)水素を有するポリシロキサンにアリルメタクリレート
等の化合物を付加反応させる方法(特開昭52−357
19号公報)などの他,ポリシロキサンに感光基を導入
する種々の方法が知られている。しかし,これらのポリ
シロキサンに感光基を導入する方法では,その製造法が
非常にはん雑であるという欠点を有していた。
The method for producing a photosensitive silicone resin is 1) a method of reacting a polysiloxane having a hydroxyl group with an alkoxysilane having a methacryl group (JP-A-49-3
No. 9200) 2) A method in which a compound such as allyl methacrylate is added to a polysiloxane having hydrogen (Japanese Patent Application Laid-Open No. 52-357).
19), various methods of introducing a photosensitive group into polysiloxane are known. However, the method of introducing a photosensitive group into these polysiloxanes has a drawback that the production method is very complicated.

本発明者らは,この欠点に鑑み上記のように感光基を導
入した樹脂を用いることなく容易に製造可能な感光性樹
脂組成物を得る目的で検討を重ねた結果,本発明に至つ
た。
In view of this drawback, the present inventors have conducted studies for the purpose of obtaining a photosensitive resin composition that can be easily produced without using a resin having a photosensitive group introduced as described above, and as a result, arrived at the present invention.

すなわち本発明は, 一般式(a)SiX4(b)RSiX3(c)R2SiX2または(d)R3SiX(ここ
でXは加水分解可能な基を表わし,Rはメチル基,エチ
ル基またはフエニル基を表わす)で示されるシラン化合
物の二種以上を加水分解した後重縮合して得られるポリ
シロキサン(A)と(B)芳香族アジド化合物および/または
芳香族スルホニルアジド化合物を含有してなる感光性シ
リコーン樹脂組成物に関する。
That is, the present invention provides a compound represented by the general formula (a) SiX 4 (b) RSiX 3 (c) R 2 SiX 2 or (d) R 3 SiX (wherein X represents a hydrolyzable group, R represents a methyl group or ethyl group). A polysiloxane (A) and / or (B) containing an aromatic azide compound and / or an aromatic sulfonyl azide compound. And a photosensitive silicone resin composition obtained from the above.

本発明によれば,ベースレジンとなる上記のポリシロキ
サンと、感光性化合物である芳香族アジド化合物および
/または芳香族スルホニルアジド化合物を混合すること
により容易に感光性シリコーン樹脂組成物を得ることが
できる。
According to the present invention, a photosensitive silicone resin composition can be easily obtained by mixing the above-mentioned polysiloxane serving as a base resin with an aromatic azide compound and / or an aromatic sulfonyl azide compound which are photosensitive compounds. it can.

以下,本発明を詳細に説明する。Hereinafter, the present invention will be described in detail.

本発明の感光性シリコーン樹脂組成物に用いられるポリ
シロキサンは,前記のシラン化合物を加水分解した後重
縮合することにより,得られるもので,すでに公知の化
合物であり,公知の方法によつて製造される。前記した
シラン化合物の一般式において加水分解可能な基である
Xは,例えば塩素,アルコキシ基などであり,Rは,メ
チル基,エチル基またはフエニル基であり,これらはす
べて同一であつても相違してもよい。
The polysiloxane used in the photosensitive silicone resin composition of the present invention is obtained by hydrolyzing and then polycondensing the above-mentioned silane compound, which is a known compound and is produced by a known method. To be done. In the above general formula of the silane compound, X, which is a hydrolyzable group, is, for example, chlorine or an alkoxy group, R is a methyl group, an ethyl group or a phenyl group, and these are all the same or different. You may.

一般式(a)で示されるシラン化合物の例としては,SiC
l4,Si(OCH3)4,Si(OC2H5)4等があり,(b)で示されるシ
ラン化合物の例としては、CH3SiCl3,CH3Si(OCH3)3,CH
3Si(OC2H5)3等がある。一般式(c)または(d)で示されるシラン化合物
は一般式(b)で示される基の数を変えたものがあげられ
る。
An example of the silane compound represented by the general formula (a) is SiC.
l 4, Si (OCH 3) 4, Si (OC 2 H 5) has 4 or the like, examples of the silane compound represented by (b), CH 3 SiCl 3 , CH 3 Si (OCH 3) 3, CH
3 Si (OC 2 H 5 ) 3 , Etc. Examples of the silane compound represented by the general formula (c) or (d) include those in which the number of groups represented by the general formula (b) is changed.

これらのシラン化合物を二種以上を加水分解する際の混
合比および置換基Rの種類を変えることにより,得られ
るポリシロキサンおよび感光性樹脂組成物の特性を調整
することが可能である。すなわち,加水分解において上
記の一般式(a)または(b)で示される4官能成分または3
官能成分を多く用いると,ポリシロキサンおよび感光性
樹脂組成物は,耐熱性にすぐれ,剛直なものとなる。
By changing the mixing ratio and the kind of the substituent R when hydrolyzing two or more kinds of these silane compounds, it is possible to adjust the properties of the obtained polysiloxane and photosensitive resin composition. That is, in the hydrolysis, the tetrafunctional component or 3 represented by the general formula (a) or (b) above is used.
When a large amount of the functional component is used, the polysiloxane and the photosensitive resin composition have excellent heat resistance and become rigid.

また,上記の一般式(c)または(d)で示される2官能成分
または1官能成分を多く用いると可とう性にすぐれたポ
リシロキサンおよび感光性樹脂組成物が得られる。
When a large amount of the bifunctional component or monofunctional component represented by the general formula (c) or (d) is used, a polysiloxane and a photosensitive resin composition having excellent flexibility can be obtained.

また,本発明の感光性シリコーン樹脂組成物に用いられ
る感光性化合物である芳香族アジド化合物および/また
は芳香族スルホニルアジド化合物は光照射により活性種
ナイトレンを生成し,この活性種は二量化,二重結合へ
の付加,水素引き抜き反応などを起こすことが知られて
いる。従つてポリシロキサン中に添加されたこれらの感
光性化合物は上記反応を経由して,その光照射部と光非
照射部に現像液に対する溶解性の差異をもたらし,パタ
ーン形成が可能となる。
Also, the aromatic azide compound and / or aromatic sulfonyl azide compound, which is a photosensitive compound used in the photosensitive silicone resin composition of the present invention, produces an active species nitrene upon irradiation with light, and this active species is dimerized and dimerized. It is known to cause addition to heavy bonds and hydrogen abstraction reactions. Accordingly, these photosensitive compounds added to the polysiloxane cause a difference in solubility in the developing solution between the light-irradiated portion and the non-light-irradiated portion through the above reaction, and pattern formation becomes possible.

本発明に用いられる芳香族アジド化合物としては例えば 等のモノアジド化合物, 等のビスアジド化合物などがある。また,芳香族スルホ
ニルアジド化合物としては,例えば 等のモノスルホニルアジド化合物 等のビススルホニルアジド化合物などがある。これらの
感光性化合物は,単独でまたは二種以上を併用して用い
ることができる。
Examples of the aromatic azide compound used in the present invention include Monoazide compounds such as And other bisazide compounds. Further, as the aromatic sulfonyl azide compound, for example, Monosulfonyl azide compounds such as And other bissulfonyl azide compounds. These photosensitive compounds can be used alone or in combination of two or more kinds.

本発明の感光性シリコーン樹脂組成物は,通常ポリシロ
キサンと感光性化合物を適当な有機溶媒に溶解した状態
で使用されるが,この場合に用いる溶媒としては,ポリ
シロキサンおよび感光性化合物のいずれをも溶解する溶
媒が用いられる。
The photosensitive silicone resin composition of the present invention is usually used in a state in which polysiloxane and a photosensitive compound are dissolved in an appropriate organic solvent. As the solvent used in this case, either polysiloxane or photosensitive compound is used. A solvent that also dissolves is used.

また,本発明の感光性シリコーン樹脂組成物には種々の
増感剤を併用することも可能である。
Further, various sensitizers can be used in combination with the photosensitive silicone resin composition of the present invention.

増感剤は感光性化合物の感光波長域をひろげたり,感光
性化合物に光エネルギーを効率よく与えるなどして感光
感度の向上をはかるものであり,本発明においては,例
えばベンゾインまたはその誘導体,ベンゾインメチルエ
ーテル等のベンゾインエーテル類,ベンジルとその誘導
体,アリールジアゾニウム塩,アントラキノンとその誘
導体,アセトフエノンまたはその誘導体,ジフエニルジ
スルフイド等のイオウ化合物,ベンゾフエノン又はその
誘導体などが使用可能であり,これらは一種または二種
以上が用いられる。
The sensitizer is intended to improve the photosensitivity by, for example, broadening the photosensitizing wavelength range of the photosensitive compound or efficiently applying light energy to the photosensitive compound. In the present invention, for example, benzoin or its derivative, benzoin Benzoin ethers such as methyl ether, benzyl and its derivatives, aryldiazonium salts, anthraquinone and its derivatives, acetophenone or its derivatives, sulfur compounds such as diphenyldisulfide, benzophenone or its derivatives, etc. can be used. One kind or two or more kinds are used.

また,必要に応じてシランカツプリン剤などの接着助剤
を用いてもよい。
If necessary, an adhesion aid such as a silane capping agent may be used.

本発明における感光性シリコーン樹脂組成物の組成とし
ては,ポリシロキサン100重量部に対して,感光性化
合物は,好ましくは1〜50重量部,より好ましくは5
〜30重量部の範囲で用いられる。感光性化合物が多す
ぎると保存中に感光性化合物が析出したり,感光性化合
物が少なすぎると光反応後,光照射部と光非照射部との
現像液に対する溶解性の差が小さくなりパターン形成能
が低下する傾向がある。
The composition of the photosensitive silicone resin composition of the present invention is preferably 1 to 50 parts by weight, more preferably 5 parts by weight, based on 100 parts by weight of polysiloxane.
It is used in the range of up to 30 parts by weight. If the amount of the photosensitive compound is too large, the photosensitive compound will be precipitated during storage, and if the amount of the photosensitive compound is too small, the difference in solubility between the light-irradiated part and the non-light-irradiated part in the developing solution will be small after the photoreaction. Formability tends to decrease.

本発明になる感光性シリコーン樹脂組成物は上記した様
な組成で有機溶媒溶液とし,適当な方法で基材に塗布し
た後,溶媒を乾燥し光照射を行ない,ついで有機溶媒,
希アルカリ溶液等の現像液を用いてパターンを形成する
ことができる。
The photosensitive silicone resin composition according to the present invention is prepared as an organic solvent solution having the above composition, coated on a substrate by an appropriate method, dried, and irradiated with light, and then the organic solvent,
The pattern can be formed using a developing solution such as a dilute alkaline solution.

本発明を実施例より説明する。The present invention will be described with reference to examples.

実施例1 ポリシロキサンの合成は特開昭50-111197号公報の実施
例1の条件に従つて行なつた。メチルトリクロロシラン
1モルとジメチルジクロロシラン1モルの混合物を冷水
中に添加して加水分解して得られたゲル状物を水洗した
後水酸化カリウム6モルを加えて全体を溶解させ,カリ
ウムシラノレートを40重量%含む水溶液を得た。
Example 1 Polysiloxane was synthesized according to the conditions described in Example 1 of JP-A-50-111197. A mixture of 1 mol of methyltrichlorosilane and 1 mol of dimethyldichlorosilane was added to cold water and hydrolyzed to wash a gel-like substance, which was washed with water, and then 6 mol of potassium hydroxide was added to dissolve the whole, and potassium silanolate was added. An aqueous solution containing 40% by weight of was obtained.

このシラノレート水溶液とメチルイソブチルケトン60
0mlとを還流冷却管および滴下ロート付反応器に仕込み
シラノレートの水溶液層(下層)とメチルイソブチルケ
トン層(上層)の2層を形成させた。
This silanolate aqueous solution and methyl isobutyl ketone 60
0 ml was charged into a reactor equipped with a reflux condenser and a dropping funnel to form two layers of an aqueous silanolate solution layer (lower layer) and a methyl isobutyl ketone layer (upper layer).

つぎにこの2層がくずれない程度に加熱して還流させな
がら,滴下ロートより無水酢酸3モルを上層に滴下し,
全量滴下後さらに2時間還流させ反応を完結させた。こ
うして得られた上層をメタノール中に注ぎポリシロキサ
ンを得た。
Next, while heating and refluxing these two layers to the extent that they do not collapse, add 3 mol of acetic anhydride to the upper layer from a dropping funnel,
After the entire amount was dropped, the mixture was refluxed for 2 hours to complete the reaction. The upper layer thus obtained was poured into methanol to obtain polysiloxane.

こうして得られたポリシロキサン(重量平均分子量10
万)10gに3,3′−ジアジドジフエニルスルホン1g
を添加し,トルエン100gに溶解して感光性シリコー
ン樹脂組成物を作製した。
The polysiloxane thus obtained (weight average molecular weight 10
10,000) 1 g of 3,3'-diazidodiphenyl sulfone per 10 g
Was added and dissolved in 100 g of toluene to prepare a photosensitive silicone resin composition.

この組成物をシリコーンウエハ上にスピンナーで膜厚1
μmに塗布し,塗布後120℃で20分間乾燥し,石英
マスク(大日本印刷株式会社製 DNP フアインライ
ンテストパターン1)を介してXe-Hg灯により50mW/c
m2で光照射を行なつた。その後希アルカリ水溶液(5%
のか性カリ溶液)で10分間現像した結果3μmのライ
ンとスペースを有する非常に良好なパターンが得られ
た。
This composition is spun onto a silicon wafer to give a film thickness of 1
After coating, it is dried at 120 ° C for 20 minutes, and 50mW / c with a Xe-Hg lamp through a quartz mask (Dainippon Printing Co., Ltd. DNP Far Inline Test Pattern 1).
Light irradiation was performed at m 2 . Then dilute alkaline solution (5%
After 10 minutes of development with a caustic potash solution, a very good pattern having lines and spaces of 3 μm was obtained.

実施例2 米国特許第3,017,385号明細書の実施例1に従いジフエ
ニルジエトキシシラン0.1モル,フエニルトリエトキシ
シラン0.89モル,トリフエニルエトキシシラン0.01モル
をベンゼン500mlに溶解し,還流しながら,水酸化テ
トラメチルアンモニウム水溶液を滴下して加水分解を行
なつた。
Example 2 According to Example 1 of U.S. Pat. No. 3,017,385, 0.1 mol of diphenyldiethoxysilane, 0.89 mol of phenyltriethoxysilane, and 0.01 mol of triphenylethoxysilane were dissolved in 500 ml of benzene, and the mixture was refluxed for oxidation. Hydrolysis was performed by dropping an aqueous tetramethylammonium solution.

こうして得られた加水分解物を実施例1と同様にして重
縮合してポリシロキサンを合成し,得られたポリシロキ
サン(重量平均分子量1万)10gにパラアジド安息香
酸2−(ジメチルアミノ)エチル3gを添加し,シクロ
ヘキサノン100gに溶解して感光性シリコン樹脂組成
物を作製した。
The hydrolyzate thus obtained was polycondensed in the same manner as in Example 1 to synthesize polysiloxane, and 10 g of the obtained polysiloxane (weight average molecular weight of 10,000) was added with 3 g of 2- (dimethylamino) ethyl paraazidobenzoate. Was added and dissolved in 100 g of cyclohexanone to prepare a photosensitive silicone resin composition.

この組成物を用いて実施例1と同様の処理を行なつたと
ころ,3μmのラインとスペースを有する良好なパター
ンが得られた。
When the same treatment as in Example 1 was carried out using this composition, a good pattern having lines and spaces of 3 μm was obtained.

比較例1 ジメチルジクロルシランのみを用いて実施例1と同様の
条件でポリシロキサンを合成し,実施例1と同様にして
ポリシロキサン10gに3,3′−ジアジドジフエニルス
ルホン1gを添加し,トルエン100gに溶解して感光
性シリコーン樹脂組成物を作製した。
Comparative Example 1 Polysiloxane was synthesized using only dimethyldichlorosilane under the same conditions as in Example 1, and 1 g of 3,3′-diazidodiphenyl sulfone was added to 10 g of polysiloxane in the same manner as in Example 1. , And dissolved in 100 g of toluene to prepare a photosensitive silicone resin composition.

比較例2 ジフエニルジエトキシシランのみを用いて実施例2と同
様の条件でポリシロキサンを合成し,実施例2と同様に
してポリシロキサン10gにパラアジド安息香酸−2
(ジメチルアミノ)エチル3gを添加しシクロヘキサノ
ン100gに溶解して感光性シリコーン樹脂組成物を作
製した。
Comparative Example 2 A polysiloxane was synthesized using only diphenyldiethoxysilane under the same conditions as in Example 2, and 10 g of polysiloxane was treated with para-azidobenzoic acid-2 in the same manner as in Example 2.
3 g of (dimethylamino) ethyl was added and dissolved in 100 g of cyclohexanone to prepare a photosensitive silicone resin composition.

上記の実施例および比較例で得た感光性シリコーン樹脂
組成物をシリコーンウエハ上にスピンナーで膜厚1μm
に塗布し,塗布後120℃で20分間乾燥し,実施例1
と同様の条件で光照射を行ない幅1mmのラインとスペー
スを形成した。ついで350℃で1時間加熱硬化後,シ
リコーンウエハを120℃で1気圧下でのプレツシヤー
クツカーテスト(PCT)を行ない所定時間後にJIS K
5400に準じセロテープによる剥離試験を行なつた。判定
は一部剥離及び全面剥離が生じるかどうかを目視で観察
し行なつた。
The photosensitive silicone resin compositions obtained in the above Examples and Comparative Examples were spinner-coated on a silicone wafer to a film thickness of 1 μm.
And then drying at 120 ° C. for 20 minutes.
Light irradiation was performed under the same conditions as above to form a line and space having a width of 1 mm. Then, after heat-curing at 350 ° C for 1 hour, the silicone wafer is subjected to a pre-cushion tester (PCT) at 120 ° C under 1 atmosphere, and after a predetermined time, JIS K
According to 5400, a peeling test with cellophane tape was performed. The judgment was made by visually observing whether partial peeling or full-scale peeling occurred.

その結果を第1表に示す。The results are shown in Table 1.

上記の結果により,ジメチルジクロルシランまたはジフ
エニルジエトキシシランのみを用いた比較例の場合に
は,実施例に比べてシリコーンウエハに対する接着性が
低いことが示される。
The above results show that in the case of the comparative example using only dimethyldichlorosilane or diphenyldiethoxysilane, the adhesiveness to the silicone wafer is lower than that of the example.

本発明によれば,ポリシロキサンと感光性化合物を混合
するだけで容易に感光性シリコーン樹脂組成物を作製す
ることができ,またこの感光性シリコーン樹脂組成物
は,実施例にも示した通り3μmのラインとスペースを
有する良好なパターンが得られ,また基材との接着性に
も優れるため,電子部品の回路形成用レジスト等の用途
に使用することも可能である。
According to the present invention, a photosensitive silicone resin composition can be easily prepared simply by mixing a polysiloxane and a photosensitive compound, and this photosensitive silicone resin composition has a thickness of 3 μm as shown in Examples. Since a good pattern having lines and spaces can be obtained and the adhesiveness to the substrate is excellent, it can be used for applications such as resists for forming circuits of electronic parts.

フロントページの続き (56)参考文献 特開 昭59−198446(JP,A) 特開 昭54−17015(JP,A) 特開 昭51−127801(JP,A) 特開 昭58−96654(JP,A)Continuation of the front page (56) Reference JP 59-198446 (JP, A) JP 54-17015 (JP, A) JP 51-127801 (JP, A) JP 58-96654 (JP , A)

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】一般式(a)SiX4(b)RSiX3(c)R2SiX2または
(d)R3SiX(ここでXは加水分解可能な基を表わし,Rは
メチル基,エチル基またはフエニル基を表わす)で示さ
れるシラン化合物の二種以上を加水分解した後重縮合し
て得られるポリシロキサン(A)ならびに(B)芳香族アジド
化合物および/または芳香族スルホニルアジド化合物を
含有してなる感光性シリコーン樹脂組成物。
1. A compound represented by the general formula (a) SiX 4 (b) RSiX 3 (c) R 2 SiX 2 or
(d) R 3 SiX (wherein X represents a hydrolyzable group, R represents a methyl group, an ethyl group or a phenyl group), and then polycondensed after hydrolyzing two or more kinds of silane compounds. A photosensitive silicone resin composition comprising the resulting polysiloxane (A) and (B) an aromatic azide compound and / or an aromatic sulfonyl azide compound.
JP58132177A 1983-07-20 1983-07-20 Photosensitive silicone resin composition Expired - Lifetime JPH0656491B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58132177A JPH0656491B2 (en) 1983-07-20 1983-07-20 Photosensitive silicone resin composition

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58132177A JPH0656491B2 (en) 1983-07-20 1983-07-20 Photosensitive silicone resin composition

Publications (2)

Publication Number Publication Date
JPS6024543A JPS6024543A (en) 1985-02-07
JPH0656491B2 true JPH0656491B2 (en) 1994-07-27

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP58132177A Expired - Lifetime JPH0656491B2 (en) 1983-07-20 1983-07-20 Photosensitive silicone resin composition

Country Status (1)

Country Link
JP (1) JPH0656491B2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06240143A (en) * 1993-02-12 1994-08-30 Fuji Xerox Co Ltd Inorganic-organic composite material and its production

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51127801A (en) * 1975-04-24 1976-11-08 Toshiba Silicone Photoosensitive composition for dry lithographic printing
JPS5417015A (en) * 1977-07-06 1979-02-08 Nec Corp Radiation sensitive composite
JPS6025061B2 (en) * 1981-12-02 1985-06-15 日立化成工業株式会社 Photosensitive silicone resin composition
JPS59196446A (en) * 1983-04-22 1984-11-07 Toshiba Corp Defect recognizing device
JPS59198446A (en) * 1983-04-26 1984-11-10 Nippon Telegr & Teleph Corp <Ntt> Photosensitive resin composition and using method thereof

Also Published As

Publication number Publication date
JPS6024543A (en) 1985-02-07

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