JPS5896654A - Photosensitive silicon resin composition - Google Patents

Photosensitive silicon resin composition

Info

Publication number
JPS5896654A
JPS5896654A JP19485181A JP19485181A JPS5896654A JP S5896654 A JPS5896654 A JP S5896654A JP 19485181 A JP19485181 A JP 19485181A JP 19485181 A JP19485181 A JP 19485181A JP S5896654 A JPS5896654 A JP S5896654A
Authority
JP
Japan
Prior art keywords
siloxane
photosensitive
resin composition
aromatic
polyladder
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP19485181A
Other languages
Japanese (ja)
Other versions
JPS6025061B2 (en
Inventor
Shunichiro Uchimura
内村 俊一郎
Tonobu Sato
佐藤 任延
Daisuke Makino
大輔 牧野
Shigeru Koibuchi
滋 鯉渕
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Resonac Corp
Original Assignee
Hitachi Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Chemical Co Ltd filed Critical Hitachi Chemical Co Ltd
Priority to JP19485181A priority Critical patent/JPS6025061B2/en
Publication of JPS5896654A publication Critical patent/JPS5896654A/en
Publication of JPS6025061B2 publication Critical patent/JPS6025061B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Compositions Of Macromolecular Compounds (AREA)

Abstract

PURPOSE:To obtain novel titled composition with high heat resistance after photochemical reaction, useful for printing plate making, resists for forming the circuits of electronic parts, etc., comprising a (terminal hydroxy) polyladder siloxane and an aromatic (sulfonyl)azide compound. CONSTITUTION:The objective composition comprising (A) a polyladder siloxane of formulaI[R1 and R2 are each monovalent (substituted) hydrocarbon; n is a positive integer]and/or a terminal hydroxypolyladder siloxane of formula II[R3 and R4 are monovalent (substituted) hydrocarbon; m is an integer]and (B) an aromatic azide compound (e.g. of formula III, or IV) and/or an aromatic sulfonylazide compound (e.g. of formula V, or VI). For the application, the above composition is usually dissolved in a solvent such as bonzene, acetone, etc.

Description

【発明の詳細な説明】 本発明は新規な感光性シリコーン樹脂組成物に関するも
のである。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a novel photosensitive silicone resin composition.

感光性シリコーン樹脂の製造法としてはl) 水酸基を
有するポリシロ中サンに、メタクリル基を有するアルコ
キシシランを反応させる方法(特開昭49−39200
号公報)。
The method for producing photosensitive silicone resins is l) a method in which a polysilane having a hydroxyl group is reacted with an alkoxysilane having a methacrylic group (Japanese Unexamined Patent Publication No. 49-39200
Publication No.).

2) 水−声・を有するポリシロキサンにアリルメタク
リレート等の化合物を付加反応させる方法(特開@52
−36719号公報) などの他、ポリシロキサンに感光基を導入する種々の方
法が知られている。しかし、これらのポリシロキサンに
感光基を導入する方法では。
2) A method of addition-reacting a compound such as allyl methacrylate to a polysiloxane having a water-like structure (Unexamined Japanese Patent Publication No. 52
36719), various other methods are known for introducing photosensitive groups into polysiloxanes. However, in the method of introducing photosensitive groups into these polysiloxanes.

その製造法が非常に煩雑てめシ、これを用いて得られた
感光性樹脂組成物は、光反応後の耐熱性がわるいという
欠点を有していた。
The manufacturing method thereof is very complicated, and the photosensitive resin composition obtained using this method has a drawback of poor heat resistance after photoreaction.

本発明者らは、これらの欠点に鑑み、上記のような感光
性樹脂を用いずに容易に製造可能でめシ、光反応後の耐
熱性の優れ良悪光性シリコーン樹脂組成物を得る目的で
検討を重ね九結果。
In view of these drawbacks, the present inventors aimed to obtain a silicone resin composition that can be easily produced without using the above-mentioned photosensitive resin, has excellent heat resistance after photoreaction, and has good and poor photoresist properties. Nine results were obtained after repeated consideration.

本発明の感光性シリコーン樹脂組成物に至った。The photosensitive silicone resin composition of the present invention has been achieved.

本発明は。The present invention is.

(4) 一般式 (ただし、R1,Rsは、−価の炭化水素基または一価
の置換炭化水素基であり、これらは同一でも相違しても
よ(、nは正の整数である)で示されるポリラダーシロ
キサンおよび/ま九は一般式 (ただし、 ns 、 R4は、−価の炭化水素基ま九
は一価の置換炭化水素基であシ、これらは同一で4相違
してもよ(emは整数である)で示される末端ヒドロキ
シポリラダーシロキサン ならびk (I3)芳香族アジド化合物および/ま九は芳香族スル
ホニルアジド化合物 を含有してなる感光性シリコーン樹脂組成物に関する。
(4) General formula (where R1 and Rs are -valent hydrocarbon groups or monovalent substituted hydrocarbon groups, and they may be the same or different (, n is a positive integer). The polyladder siloxanes and/or shown have the general formula (where ns, R4 is a -valent hydrocarbon group, and R4 is a monovalent substituted hydrocarbon group, and these may be the same or 4 different). The present invention relates to a photosensitive silicone resin composition containing a terminal hydroxypolyladder siloxane represented by (em is an integer), an aromatic azide compound (I3), and an aromatic sulfonyl azide compound (I3).

  。  .

本発明になる感光性シリコーン樹脂組成物は。The photosensitive silicone resin composition of the present invention is as follows.

ベースレジンとなる上記のポリラダーシロキサンおよび
/iたは末端ヒドロキシポリラダーシロキサンと感光性
化合物である芳香族アジド化合物および/または芳香族
スルホニルアジド化合物を適当な溶剤の存在下で混合す
ることにより容易に得られる。また9本発明の感光性シ
リコーン樹脂組成物は、ベースレジンとしてボ“リラダ
ーシロキサンまたは末端ヒドロΦシボリラダーシロキサ
ンを用いている丸め、光反応後の耐熱性が非常に優れて
いる。
This can be easily done by mixing the above-mentioned polyladder siloxane and/or terminal hydroxy polyladder siloxane as the base resin with an aromatic azide compound and/or aromatic sulfonyl azide compound as a photosensitive compound in the presence of an appropriate solvent. can be obtained. Furthermore, the photosensitive silicone resin composition of the present invention has excellent heat resistance after rounding and photoreaction using polygonal ladder siloxane or terminal hydro-Φ grained ladder siloxane as the base resin.

以下1本発明の詳細な説明する。Hereinafter, one aspect of the present invention will be explained in detail.

本発明の感光性シリコーン樹脂組成物に用いられるポリ
ラダーシロキサンは特公昭40−15989号公報、U
、8.P、3017386等に示され、その製造法とし
ては1例えば一般式R8jC/s (ここでRは一価の
炭化水素基でおる)で示されるトリクロロシランを加水
分解して得られ喪中量体を苛性カリ等のアルカリ触媒を
用いて高分子化することによって得られる。
The polyladder siloxane used in the photosensitive silicone resin composition of the present invention is disclosed in Japanese Patent Publication No. 40-15989, U.
, 8. P, 3017386, etc., and its production method is 1, for example, by hydrolyzing trichlorosilane represented by the general formula R8jC/s (where R is a monovalent hydrocarbon group) to obtain a neutral mer. It is obtained by polymerization using an alkaline catalyst such as caustic potash.

末端ヒトjキシボリラダーシpキサンは特開F!853
−88099号公報等に示され、既に知られ良化合物で
ある。本発明における上記のポリラダーシロキサンまた
は末端ヒドロキシポリラダーシロキサンを示す上記の式
において、R1゜ル、ル、R4は一価の炭化水素基また
は一価の置換炭化水素基でTob、これらは同一であっ
ても相違してもよく9例えばメチル基、エチル基。
The terminal human j-xyboryladasi-p xane is JP-A-F! 853
-88099, etc., and is already a known and good compound. In the above formula showing the above-mentioned polyladder siloxane or terminal hydroxy polyladder siloxane in the present invention, R1, L, and R4 are monovalent hydrocarbon groups or monovalent substituted hydrocarbon groups, and Tob is the same. For example, methyl group, ethyl group.

プロピル基等のアル中ル基、フェニル基、置換フェニル
基等の芳香族炭化水素基、これらのハ薗ゲン置換体など
があるが、光反応後の耐熱性を高めるためには芳香族炭
化水素基が好ましい。
There are aromatic hydrocarbon groups such as alkyl groups such as propyl groups, phenyl groups, substituted phenyl groups, and substituted products of these groups. is preferred.

上式においてn、mは正の整数であるが通常50よシ大
なる整数である。
In the above formula, n and m are positive integers, which are usually larger than 50.

を九1本発明の感光性シリコーン樹脂組成物に用いられ
る感光性化合物である芳香族アジド化合物および芳香族
スルホニルアジド化合物は光照射により活性種ナイトレ
ンを生成し、この活性種は二量化、二重結合への付加、
水素引き抜き反応などを起こすことが知られている。従
ってポリラダーシロキサンま“たは末端ヒドロキシポリ
ラダーシロキサン中に添加されたこれらの感光性化合物
は上記反応を経由して、その先照射部と未照射部に現儂
液に対する溶解性の差異をも九らし、パターン形成が可
能となる。本発明に用いられる芳香族アジド化合物とし
ては例えば 等のモノアジド化合物。
91 The aromatic azide compound and the aromatic sulfonyl azide compound, which are the photosensitive compounds used in the photosensitive silicone resin composition of the present invention, produce an active species nitrene when irradiated with light, and this active species undergoes dimerization and duplication. addition to the bond,
It is known to cause hydrogen abstraction reactions. Therefore, these photosensitive compounds added to polyladder siloxane or terminal hydroxy polyladder siloxane cause a difference in solubility in the current solution between the previously irradiated area and the unirradiated area through the above reaction. Examples of the aromatic azide compound used in the present invention include monoazide compounds such as the following.

等のビスアジド化合物などがめる。ま九、芳香族スルホ
ニルアジド化合物としては1例えば等のモノスルホニル
アジド化合物 m 等のビススルホニルアジド化合物などがある。
Bisazide compounds such as (9) Examples of aromatic sulfonyl azide compounds include bissulfonyl azide compounds such as monosulfonyl azide compounds (1) and the like.

これらの感光性化合物は単独でまたは二種以上を併用し
て用いることができる。
These photosensitive compounds can be used alone or in combination of two or more.

本発明の感光性シリコーン樹脂組成物は通常ポリラダー
シロキサンおよび/lたは末端ヒドロキシポリラダーシ
ロキサンと感光性化合物を適轟な有機溶媒に溶解し九状
態で使用されるが。
The photosensitive silicone resin composition of the present invention is usually used in a state in which polyladder siloxane and/or terminal hydroxy polyladder siloxane and a photosensitive compound are dissolved in a suitable organic solvent.

この場合に用いる溶媒としては、ポリラダーシロキサン
および末端ヒドロキシポリラダーシロキサンと感光性化
合物のいずれをも溶解するととが望ましく9例えば、ベ
ンゼン、トルエン。
The solvent used in this case is preferably one that dissolves both the polyladder siloxane, the terminal hydroxy polyladder siloxane, and the photosensitive compound.9 For example, benzene, toluene.

キシレン等の芳香族炭化水素、アセトン、メチルエチル
ケトン等のケトン系溶媒などが用いられる。これらは単
独で用いても良いし混合して用いることも可能である。
Aromatic hydrocarbons such as xylene, ketone solvents such as acetone, methyl ethyl ketone, etc. are used. These may be used alone or in combination.

を九本発明の感光性シリコーン樹脂組成物には種々の増
感剤を併用することが可能である。
It is possible to use various sensitizers in combination with the photosensitive silicone resin composition of the present invention.

増感剤は感光性化合物の感光波長域をひろげた9、感光
性化合物へ光エネルギーを効率良く与えるなどして感光
感度の向上をはかるものであり1本発明においては9例
えばベンゾイン又はその誘導体、ベンゾインメチルエー
テル勢のベンツインエーテル類、ベンジルとその誘導体
Sensitizers aim to improve photosensitivity by expanding the sensitive wavelength range of photosensitive compounds 9 and efficiently imparting light energy to photosensitive compounds. In the present invention, 9 for example, benzoin or its derivatives, Benzin ethers such as benzoin methyl ether, benzyl and its derivatives.

アリールジアゾニウム塩、アントラキノンとその誘導体
、アセトフェノン又はその誘導体、ジフェニルジスルフ
ィド等のイオウ化合物、ベンゾフェノン又はそ9誘導体
などが使用可能で6シ、これらは一種または二種以上の
混合物として用いられる。
Aryldiazonium salts, anthraquinone and its derivatives, acetophenone or its derivatives, sulfur compounds such as diphenyl disulfide, benzophenone or its derivatives, etc. can be used, and these may be used singly or as a mixture of two or more thereof.

本発明における感光性シリコーン樹脂組成物の組成とし
ては、ポリラダーシロキサンおよび/lたは末端ヒドロ
キシポリラダーシロキサン100重量部に対して感光性
化合物は、好ましくは1〜50重量部、よシ好ましくは
5〜30重量部の範囲で用いられる。感光性化合物が多
すぎると保存中に感光性化合物が析出したシ。
As for the composition of the photosensitive silicone resin composition in the present invention, the photosensitive compound is preferably 1 to 50 parts by weight, more preferably It is used in a range of 5 to 30 parts by weight. If there is too much photosensitive compound, the photosensitive compound may precipitate during storage.

光反応後の耐熱性が低下し、感光性化合物が少なすぎる
と光反応後、光照射部と未照射部との現像液に対する溶
解性の差が小さくなシバターン形成能が低下する傾向が
ある。
The heat resistance after photoreaction decreases, and if the amount of the photosensitive compound is too small, the ability to form a shibata pattern, in which the difference in solubility in a developing solution between the light irradiated area and the unexposed area is small, tends to decrease after the photoreaction.

本発明になる感光性シリコーン樹脂組成物は。The photosensitive silicone resin composition of the present invention is as follows.

上記した様な組成で前述の有機溶媒溶液にし。Make the above-mentioned organic solvent solution with the above-mentioned composition.

適当な方法で基材に塗布し喪後、溶媒を乾燥し光照射を
行なう、その後、前述し九有機溶媒。
After coating the base material by an appropriate method and drying the solvent, irradiation with light is performed, followed by the above-mentioned nine organic solvents.

希アルカリ溶液等の適当な現像液を用いてパターンを形
成することができる。
A pattern can be formed using a suitable developer such as a dilute alkaline solution.

以下1本発明の詳細な説明する。Hereinafter, one aspect of the present invention will be explained in detail.

実施例1 フェニルトリクロルシランを用いて特公昭40−159
89号公報の参考例1および実施例に準じて製造され九
ポリフェニルラダーシロキサン(重量平均分子量20万
)lO?に、3.3’−ジアジドジフェニルスルホンl
?を添加し、ベンゼン100PK溶解して感光性シリコ
ーン樹脂組成物を作製しえ。仁の組成物を5011X5
mのガラス板に膜厚1μmに塗布し、塗布後80℃で2
0分間ベンゼンを乾燥し9石英iスクを介してXe −
Hg灯によシ50 aiN/3−で光照射を行なった。
Example 1 Using phenyltrichlorosilane
9 polyphenyl ladder siloxane (weight average molecular weight 200,000) lO? produced according to Reference Example 1 and Examples of Publication No. 89. , 3,3'-diazide diphenyl sulfone
? was added and dissolved in benzene 100PK to prepare a photosensitive silicone resin composition. Composition of 5011X5
Coated to a film thickness of 1 μm on a glass plate of
Dry the benzene for 0 minutes and transfer the Xe −
Light irradiation was performed using an Hg lamp at 50 aiN/3.

その後トルエンで2分関現儂をし良好なパターンを置型
After that, I washed it with toluene for 2 minutes and placed a good pattern.

このパターンは400℃で60分加熱後も何ら変化が認
められなかった。
No change was observed in this pattern even after heating at 400° C. for 60 minutes.

実施例2 メチルトリクロルシランを用いて特開昭53−8809
9号公報の実施例1,3に準じて製造され喪末端ヒドロ
キシポリメチル2ダーシロキサン(重量平均分子量2万
)lO?にパラアジド安息香酸2−(ジメチルアミノ)
エチル3?を添加し。
Example 2 JP-A-53-8809 using methyltrichlorosilane
It was produced according to Examples 1 and 3 of Publication No. 9, and a terminal-terminated hydroxypolymethyl 2-dersiloxane (weight average molecular weight 20,000) lO? paraazidobenzoic acid 2-(dimethylamino)
Ethyl 3? Add.

トルエン150?に溶解して感光性シリコーン樹脂組成
物を作製した。この組成物を実施例1と同様の処理によ
シ光照射し良後、希アルカリ溶液で現像して曳好なパタ
ーンを得た。このパターンは300℃で60分加熱後も
何ら変化が認められなかった。
Toluene 150? A photosensitive silicone resin composition was prepared. This composition was subjected to the same treatment as in Example 1, irradiated with light, and then developed with a dilute alkaline solution to obtain a pattern that was easy to draw. No change was observed in this pattern even after heating at 300° C. for 60 minutes.

実施例3 実施例1のポリフェニル2ダーシロキサンlO成物につ
いても実施例1と同様の嵐好な結果が得られた。
Example 3 The same excellent results as in Example 1 were obtained with the polyphenyl 2-darsiloxane 1O composition of Example 1.

本発明によれば、ポリラダーシロキサンおよび/または
末端ヒドロキシボリラダーシ011?サンと感光性化合
物を混合するだけで容易に感光性シリコーン樹脂組成物
を製作することができる。まえ本発明になる感光性シリ
コーン樹脂組成物は、光反応後非常に優れ大耐熱性を有
する九め、パターン形成後300℃〜400℃以上の熱
処理にも耐えることが出来る。従つそ1本発明の感光性
シリコーン樹脂組成物は、印刷製版用のみならず、電子
部品の回路形成用レジスト、プリント回路の半田付保麺
膜の半導体のパッジページ冒ン、多層集積回路の層間絶
縁膜、液晶用配向膜、ドライエツチング用レジストなど
として1も使用可能である。
According to the invention, polyladder siloxane and/or terminal hydroxyboriradarsi 011? A photosensitive silicone resin composition can be easily produced by simply mixing sun and a photosensitive compound. First, the photosensitive silicone resin composition of the present invention has excellent heat resistance after photoreaction and can withstand heat treatment at 300° C. to 400° C. or higher after pattern formation. Accordingly, the photosensitive silicone resin composition of the present invention can be used not only for printing plate making, but also as a resist for circuit formation of electronic components, a soldering adhesive film for printed circuits, a semiconductor pad page coating, and a multilayer integrated circuit. 1 can also be used as an interlayer insulating film, an alignment film for liquid crystal, a resist for dry etching, etc.

Claims (1)

【特許請求の範囲】 1、(A)  一般式 (ただしe R1e &は、−価の炭化水素基ま良は一
価の置換炭化水素基でToシ、これらは同一でも相違し
てもよ(、nは正の整数である)で示されるポリラダー
シ費キャンおよび/または一般式 (九だし、R4,R4は、−価の炭化水素基ま九は一価
の置換炭化水素基でTo#)、これらは同一でも相違し
てもよ(、mは整数である)で示される末端ヒドロキシ
ポリラダーシ誼キサン ならびに (B)  芳香族アジド化合物および/または芳香族ス
ルホニルアジド化合物 を含有してなる感光性シリコーン樹脂組成物。
[Claims] 1. (A) General formula (where e R1e & is a -valent hydrocarbon group and is a monovalent substituted hydrocarbon group, and these may be the same or different. , n is a positive integer) and/or a general formula (where R4 and R4 are -valent hydrocarbon groups or To#), These may be the same or different (where m is an integer) and (B) a photosensitive compound containing an aromatic azide compound and/or an aromatic sulfonyl azide compound. Silicone resin composition.
JP19485181A 1981-12-02 1981-12-02 Photosensitive silicone resin composition Expired JPS6025061B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19485181A JPS6025061B2 (en) 1981-12-02 1981-12-02 Photosensitive silicone resin composition

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19485181A JPS6025061B2 (en) 1981-12-02 1981-12-02 Photosensitive silicone resin composition

Publications (2)

Publication Number Publication Date
JPS5896654A true JPS5896654A (en) 1983-06-08
JPS6025061B2 JPS6025061B2 (en) 1985-06-15

Family

ID=16331331

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19485181A Expired JPS6025061B2 (en) 1981-12-02 1981-12-02 Photosensitive silicone resin composition

Country Status (1)

Country Link
JP (1) JPS6025061B2 (en)

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6024543A (en) * 1983-07-20 1985-02-07 Hitachi Chem Co Ltd Photosensitive silicone resin composition
JPS60117242A (en) * 1983-11-29 1985-06-24 Fujitsu Ltd Micropattern forming material
JPS60238827A (en) * 1984-05-14 1985-11-27 Nippon Telegr & Teleph Corp <Ntt> Photosensitive resin composition
JPS60254036A (en) * 1984-05-30 1985-12-14 Fujitsu Ltd Formation of pattern
JPS61188539A (en) * 1985-02-18 1986-08-22 Nippon Telegr & Teleph Corp <Ntt> Formation of pattern
US4722881A (en) * 1984-12-19 1988-02-02 Hitachi, Ltd. Radiation-sensitive resist composition with an admixture of cis-(1,3,5,7-tetrahydroxy)-1,3,5,7-tetraphenylcyclotetrasiloxane and a polysilsesquioxane
US4786569A (en) * 1985-09-04 1988-11-22 Ciba-Geigy Corporation Adhesively bonded photostructurable polyimide film
US4981778A (en) * 1985-03-07 1991-01-01 Hughes Aircraft Company Polysiloxane, resist for ion beam and electron beam lithography
US6342562B1 (en) 1999-04-23 2002-01-29 Fujitsu Limited Silicon-containing polymer, process for its production, resist composition employing it, pattern-forming method and electronic device fabrication method
US6731857B2 (en) 2001-03-29 2004-05-04 Shipley Company, L.L.C. Photodefinable composition, method of manufacturing an optical waveguide with the photodefinable composition, and optical waveguide formed therefrom
US6842577B2 (en) 2002-12-02 2005-01-11 Shipley Company L.L.C. Photoimageable waveguide composition and waveguide formed therefrom
US7024093B2 (en) 2002-12-02 2006-04-04 Shipley Company, Llc Methods of forming waveguides and waveguides formed therefrom
US7072564B2 (en) 2003-11-25 2006-07-04 Rohm And Haas Electronic Materials Llc Waveguide compositions and waveguides formed therefrom
US7072565B2 (en) 2004-04-14 2006-07-04 Rohm And Haas Electronic Materials Llc Waveguide compositions and waveguides formed therefrom
US7072563B2 (en) 2003-11-25 2006-07-04 Rohm And Haas Electronic Materials Llc Waveguide compositions and waveguides formed therefrom

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0426929Y2 (en) * 1988-06-06 1992-06-29

Cited By (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6024543A (en) * 1983-07-20 1985-02-07 Hitachi Chem Co Ltd Photosensitive silicone resin composition
JPH0221575B2 (en) * 1983-11-29 1990-05-15 Fujitsu Ltd
JPS60117242A (en) * 1983-11-29 1985-06-24 Fujitsu Ltd Micropattern forming material
JPS60238827A (en) * 1984-05-14 1985-11-27 Nippon Telegr & Teleph Corp <Ntt> Photosensitive resin composition
JPH0344291B2 (en) * 1984-05-14 1991-07-05 Nippon Telegraph & Telephone
JPS60254036A (en) * 1984-05-30 1985-12-14 Fujitsu Ltd Formation of pattern
US4722881A (en) * 1984-12-19 1988-02-02 Hitachi, Ltd. Radiation-sensitive resist composition with an admixture of cis-(1,3,5,7-tetrahydroxy)-1,3,5,7-tetraphenylcyclotetrasiloxane and a polysilsesquioxane
JPS61188539A (en) * 1985-02-18 1986-08-22 Nippon Telegr & Teleph Corp <Ntt> Formation of pattern
JPH0345380B2 (en) * 1985-02-18 1991-07-10 Nippon Telegraph & Telephone
US4981778A (en) * 1985-03-07 1991-01-01 Hughes Aircraft Company Polysiloxane, resist for ion beam and electron beam lithography
US4786569A (en) * 1985-09-04 1988-11-22 Ciba-Geigy Corporation Adhesively bonded photostructurable polyimide film
US4935320A (en) * 1985-09-04 1990-06-19 Ciba-Geigy Corporation Adhesively bonded photostructurable polyimide film
US6541077B1 (en) 1999-04-23 2003-04-01 Fujitsu Limited Silicon-containing polymer, process for its production, resist composition employing it, pattern-forming method and electronic device fabrication method
US6342562B1 (en) 1999-04-23 2002-01-29 Fujitsu Limited Silicon-containing polymer, process for its production, resist composition employing it, pattern-forming method and electronic device fabrication method
US7144968B2 (en) 1999-04-23 2006-12-05 Fujitsu Limited Silicon-containing polymer, process for its production, resist composition employing it, pattern-forming method and electronic device fabrication method
US6731857B2 (en) 2001-03-29 2004-05-04 Shipley Company, L.L.C. Photodefinable composition, method of manufacturing an optical waveguide with the photodefinable composition, and optical waveguide formed therefrom
US6842577B2 (en) 2002-12-02 2005-01-11 Shipley Company L.L.C. Photoimageable waveguide composition and waveguide formed therefrom
US7024093B2 (en) 2002-12-02 2006-04-04 Shipley Company, Llc Methods of forming waveguides and waveguides formed therefrom
US7072564B2 (en) 2003-11-25 2006-07-04 Rohm And Haas Electronic Materials Llc Waveguide compositions and waveguides formed therefrom
US7072563B2 (en) 2003-11-25 2006-07-04 Rohm And Haas Electronic Materials Llc Waveguide compositions and waveguides formed therefrom
US7072565B2 (en) 2004-04-14 2006-07-04 Rohm And Haas Electronic Materials Llc Waveguide compositions and waveguides formed therefrom

Also Published As

Publication number Publication date
JPS6025061B2 (en) 1985-06-15

Similar Documents

Publication Publication Date Title
CA1335542C (en) Pattern-forming material and pattern formation method
JPS5896654A (en) Photosensitive silicon resin composition
US5554465A (en) Process for forming a pattern using a resist composition having a siloxane-bond structure
KR950002873B1 (en) Photosensitive composition
DE3817306A1 (en) POLYSILANE COMPOUND AND THIS CONTAINING LIGHT SENSITIVE COATING
CN109415513A (en) Silsesquioxane resins rich in silicon
EP0378156A2 (en) Positively photosensitive polyimide composition
JPH0623840B2 (en) Highly sensitive polyamide ester photoresist composition
KR970076092A (en) Photosensitive composition, pattern formation method and manufacturing method of electronic component
US3669662A (en) Cyclic polyisoprene photoresist compositions
JPS5843449A (en) Photosensitive polymer composition
JPS62215944A (en) Heat resistant photosensitive resin composition and formation of insulating layer
KR910005031B1 (en) Photo sensitive composition
TWI252373B (en) Fluorinated Si-polymers and photoresists comprising same
JPS6034022A (en) Manufacture of insulating layer of semiconductor device
JPH0261640A (en) Photosensitive composition
JPH0232354A (en) Photosensitive resin composition
JPS63113021A (en) Polysilane and photosensitive composition using said polysilane
JPS6035727A (en) Manufacture of pattern
JP2641246B2 (en) Pattern forming material and pattern forming method
JPH0656491B2 (en) Photosensitive silicone resin composition
KR860000070B1 (en) Photo-or radiation-sensitive polymer composition
JPS63106649A (en) Pattern forming method
JPS63157145A (en) Photosensitive resin composition
JPS61250056A (en) Photosensitive heat-resistant resin composition