JPH0652816A - 広幅のイオンビーム形成方法およびそのイオン注入装置 - Google Patents
広幅のイオンビーム形成方法およびそのイオン注入装置Info
- Publication number
- JPH0652816A JPH0652816A JP5050181A JP5018193A JPH0652816A JP H0652816 A JPH0652816 A JP H0652816A JP 5050181 A JP5050181 A JP 5050181A JP 5018193 A JP5018193 A JP 5018193A JP H0652816 A JPH0652816 A JP H0652816A
- Authority
- JP
- Japan
- Prior art keywords
- ion
- ion beam
- electrode
- potential
- ions
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000010884 ion-beam technique Methods 0.000 title claims abstract description 64
- 238000000034 method Methods 0.000 title claims description 8
- 230000015572 biosynthetic process Effects 0.000 title 1
- 238000002513 implantation Methods 0.000 title 1
- 238000000605 extraction Methods 0.000 claims abstract description 39
- 239000002245 particle Substances 0.000 claims abstract description 11
- 150000002500 ions Chemical class 0.000 claims description 63
- 230000001629 suppression Effects 0.000 claims description 45
- 230000003993 interaction Effects 0.000 claims description 17
- 230000003472 neutralizing effect Effects 0.000 claims description 11
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 230000000903 blocking effect Effects 0.000 claims 2
- 230000000737 periodic effect Effects 0.000 claims 2
- 238000005513 bias potential Methods 0.000 claims 1
- 238000000926 separation method Methods 0.000 claims 1
- 230000002238 attenuated effect Effects 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 description 8
- 230000001133 acceleration Effects 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000007943 implant Substances 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000006386 neutralization reaction Methods 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
- H01J37/3172—Maskless patterned ion implantation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K15/00—Electron-beam welding or cutting
- B23K15/02—Control circuits therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/08—Ion sources; Ion guns
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physical Vapour Deposition (AREA)
- Electron Sources, Ion Sources (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US837277 | 1992-02-18 | ||
| US07/837,277 US5218210A (en) | 1992-02-18 | 1992-02-18 | Broad beam flux density control |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0652816A true JPH0652816A (ja) | 1994-02-25 |
Family
ID=25274035
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5050181A Pending JPH0652816A (ja) | 1992-02-18 | 1993-02-16 | 広幅のイオンビーム形成方法およびそのイオン注入装置 |
Country Status (8)
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100653999B1 (ko) * | 2005-06-29 | 2006-12-06 | 주식회사 하이닉스반도체 | 와이드빔을 이용한 불균일 이온주입장치 및 이온주입방법 |
| JP2022515025A (ja) * | 2018-12-20 | 2022-02-17 | アクセリス テクノロジーズ， インコーポレイテッド | イオン源のためのテトロード引出装置 |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2722213B1 (fr) * | 1994-07-05 | 1996-09-20 | Plasmion | Dispositif pour creer un faisceau d'ions d'energie ajustable notamment pour le traitement au defile et sous vide de surfaces de grandes dimensions |
| US5959396A (en) * | 1996-10-29 | 1999-09-28 | Texas Instruments Incorporated | High current nova dual slit electrode enchancement |
| US6534775B1 (en) * | 2000-09-01 | 2003-03-18 | Axcelis Technologies, Inc. | Electrostatic trap for particles entrained in an ion beam |
| GB0127251D0 (en) * | 2001-11-13 | 2002-01-02 | Nordiko Ltd | Apparatus |
| US7421973B2 (en) * | 2003-11-06 | 2008-09-09 | Axcelis Technologies, Inc. | System and method for performing SIMOX implants using an ion shower |
| US7748344B2 (en) * | 2003-11-06 | 2010-07-06 | Axcelis Technologies, Inc. | Segmented resonant antenna for radio frequency inductively coupled plasmas |
| US6872953B1 (en) | 2004-05-20 | 2005-03-29 | Axcelis Technologies, Inc. | Two dimensional stationary beam profile and angular mapping |
| US7446326B2 (en) * | 2005-08-31 | 2008-11-04 | Varian Semiconductor Equipment Associates, Inc. | Technique for improving ion implanter productivity |
| CN103094032B (zh) * | 2011-11-07 | 2016-08-10 | 北京中科信电子装备有限公司 | 一种多电极束流聚焦调节装置 |
| US8673753B1 (en) * | 2012-12-03 | 2014-03-18 | Advanced Ion Beam Technology, Inc. | Multi-energy ion implantation |
| CN103681191B (zh) * | 2013-11-26 | 2016-03-09 | 中国电子科技集团公司第四十八研究所 | 一种离子注入机宽束均匀性调节装置 |
| JP6721486B2 (ja) * | 2016-10-18 | 2020-07-15 | 東京エレクトロン株式会社 | イオンビーム照射装置及び基板処理装置 |
| CN113278930B (zh) * | 2021-04-25 | 2023-04-18 | 北京航空航天大学合肥创新研究院(北京航空航天大学合肥研究生院) | 一种纳米团簇的束流密度控制装置及其使用方法 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3150156C2 (de) * | 1981-12-18 | 1986-04-30 | Gesellschaft für Schwerionenforschung mbH, 6100 Darmstadt | Hochstrom-Ionenquelle |
| DE3708716C2 (de) * | 1987-03-18 | 1993-11-04 | Hans Prof Dr Rer Nat Oechsner | Hochfrequenz-ionenquelle |
| US4883968A (en) * | 1988-06-03 | 1989-11-28 | Eaton Corporation | Electron cyclotron resonance ion source |
| US5023458A (en) * | 1989-01-04 | 1991-06-11 | Eaton Corporation | Ion beam control system |
| US4914305A (en) * | 1989-01-04 | 1990-04-03 | Eaton Corporation | Uniform cross section ion beam system |
| US5089746A (en) * | 1989-02-14 | 1992-02-18 | Varian Associates, Inc. | Production of ion beams by chemically enhanced sputtering of solids |
| US4952843A (en) * | 1989-03-08 | 1990-08-28 | Brown Ian G | High current ion source |
-
1992
- 1992-02-18 US US07/837,277 patent/US5218210A/en not_active Expired - Lifetime
-
1993
- 1993-02-09 CA CA002089099A patent/CA2089099C/en not_active Expired - Fee Related
- 1993-02-11 KR KR1019930001829A patent/KR100251517B1/ko not_active IP Right Cessation
- 1993-02-16 JP JP5050181A patent/JPH0652816A/ja active Pending
- 1993-02-17 DE DE69303299T patent/DE69303299T2/de not_active Expired - Fee Related
- 1993-02-17 EP EP93301143A patent/EP0557067B1/en not_active Expired - Lifetime
- 1993-02-17 SG SG1996004412A patent/SG45353A1/en unknown
- 1993-02-20 TW TW082101211A patent/TW218423B/zh active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100653999B1 (ko) * | 2005-06-29 | 2006-12-06 | 주식회사 하이닉스반도체 | 와이드빔을 이용한 불균일 이온주입장치 및 이온주입방법 |
| JP2022515025A (ja) * | 2018-12-20 | 2022-02-17 | アクセリス テクノロジーズ， インコーポレイテッド | イオン源のためのテトロード引出装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| CA2089099C (en) | 2000-01-11 |
| TW218423B (US06168655-20010102-C00055.png) | 1994-01-01 |
| US5218210A (en) | 1993-06-08 |
| EP0557067B1 (en) | 1996-06-26 |
| CA2089099A1 (en) | 1993-08-19 |
| KR930017662A (ko) | 1993-09-20 |
| EP0557067A1 (en) | 1993-08-25 |
| DE69303299D1 (de) | 1996-08-01 |
| DE69303299T2 (de) | 1997-01-23 |
| SG45353A1 (en) | 1998-01-16 |
| KR100251517B1 (ko) | 2000-04-15 |
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| JPH0652816A (ja) | 広幅のイオンビーム形成方法およびそのイオン注入装置 | |
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