JPH0645470A - Package for storing semiconductor chip - Google Patents

Abstract

PURPOSE:To provide a package for storing a semiconductor chip so that the inside of the package consisting of an insulating base body and a lid body can be hermetically sealed and that the semiconductor chip inside the package can be normally and stably operated. CONSTITUTION:This package for storing a semiconductor chip consists of an insulating base body 1 and a lid body 2 and has a space inside the package for storing the semiconductor chip, and the lid body 2 is less than 0.4mm thick and a protrusion 2a is formed on the inner wall of the lid body 2 so as to be opposite to the space for storing the semiconductor chip.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an improvement of a semiconductor element housing package for housing a semiconductor element.

[0002]

2. Description of the Related Art Conventionally, a package for housing a semiconductor element such as an LSI (Large Scale Integrated Circuit Element), for example, a glass-sealed type semiconductor element housing package is usually made of aluminum oxide as shown in FIG. Union, mullite sintered body,
It is made of an electrically insulating material such as an aluminum nitride sintered body or a silicon nitride sintered body, has a recess 21a for mounting and housing the semiconductor element 23 in the center, and a glass layer 24 for sealing on the upper surface. The insulating substrate 21 that has been deposited and the same electrically insulating material, which has a recess for forming a cavity for accommodating the semiconductor element 23 in the center, and a glass layer 25 for sealing is deposited on the lower surface. Lid 22 and an external lead terminal 26 for electrically connecting the semiconductor element 23 housed inside to an external electric circuit, and the external lead terminal is provided on the upper surface of the insulating base 21.
The external lead terminals 26 are formed by placing 26 and melting the glass layer 24 for sealing which has been previously attached.
Is temporarily fixed on the insulating base 21, and then the concave portion of the insulating base 21 is
The semiconductor element 23 is attached to the bottom surface of the semiconductor device 21a, and each electrode of the semiconductor element 23 is connected to the external lead terminal 26 via the bonding wire 27. Thereafter, the insulating base 21 and the lid 22 are opposed to each other. The glass layers 24 and 25 for sealing which have been adhered to the surfaces are melted and integrated at a temperature of about 400 ° C.,
A semiconductor device as a product is obtained by hermetically sealing a container composed of the insulating base 21 and the lid 22.

When the insulating substrate 21 and the lid 22 are made of, for example, an aluminum oxide sintered body, generally, an organic solvent suitable for alumina (Al ₂ O ₃ ) or silica (SiO ₂ ) is used.
The raw material powder obtained by adding and mixing the solvent is filled in a press die of a predetermined shape and pressed at a constant pressure to be molded, and thereafter, the molded product is manufactured by firing at a temperature of about 1500 ° C. ing.

[0004]

However, in recent years,
Information processing devices such as IC cards are rapidly becoming thinner, and semiconductor devices mounted on the information processing devices are required to have thinner thicknesses, and at the same time, for semiconductor element storage that constitutes the semiconductor device. The thickness of the lid of the package is 0.
It has become necessary to reduce the thickness of the entire package to 4 mm or less.

Therefore, if the thickness of the lid of the conventional package for accommodating semiconductor elements described above is set to 0.4 mm or less and the thickness of the entire package is reduced, the lid of the package is made of an electrically insulating material such as an aluminum oxide sintered body. Since the aluminum oxide sintered body and the like are fragile and have low mechanical strength, when the semiconductor element is hermetically housed in the container formed of the insulating base and the lid, an external force is applied to the lid. External force causes the lid body to bend and damage the inside of the container, and as a result, the airtight seal inside the container is broken, resulting in the drawback that the semiconductor element housed inside cannot operate normally and stably for a long period of time. did.

At the same time, when an external force is applied to the lid body and the lid body bends toward the inside of the container, the lid body pulls the sealing glass layer joining the insulating substrate and the lid body to break or crack. As a result, the airtight seal inside the container is broken as a result, and the semiconductor element housed inside cannot be operated normally and stably for a long period of time.

[0007]

SUMMARY OF THE INVENTION The present invention has been devised in view of the above-mentioned drawbacks, and its object is to complete hermetically sealing the inside of a container composed of an insulating base and a lid, and to store a semiconductor element housed therein for a long period of time. It is an object of the present invention to provide a package for accommodating a semiconductor element, which can operate normally and stably.

[0008]

SUMMARY OF THE INVENTION The present invention is a semiconductor element housing package comprising an insulating base and a lid, and having a cavity for housing a semiconductor element therein, wherein the lid has a thickness of It is characterized in that a protrusion is formed on the surface of 0.4 mm or less and in contact with the void for housing the semiconductor element.

[0009]

According to the package for accommodating semiconductor elements of the present invention, since the projections are provided on the surface of the lid constituting the container for accommodating the semiconductor elements, the surface facing the cavity for accommodating the semiconductor elements, Even if the thickness is reduced to 0.4 mm or less, it is not largely bent by the application of an external force, and there is no possibility of damage due to the bending.

Further, since the lid is not largely bent, the glass layer for sealing which joins the insulating base and the lid is not cracked or cracked. As a result, the insulating base and the lid are formed. The airtight sealing inside the container is completed, and the semiconductor element housed inside can be normally and stably operated for a long period of time.

[0011]

The present invention will now be described in detail with reference to the accompanying drawings. FIG. 1 shows an embodiment of a package for housing a semiconductor device of the present invention, in which 1 is an insulating base and 2 is a lid. A container for housing the semiconductor element 3 with the insulating base 1 and the lid 2.
4 are composed.

The insulating substrate 1 is made of an electrically insulating material such as an aluminum oxide sintered body, a mullite sintered body, an aluminum nitride sintered body, and a silicon carbide sintered body. A recess 1a for accommodating 3 is provided, and the semiconductor element 3 is provided on the bottom surface of the recess 1a with glass, resin,
It is attached and fixed via an adhesive material such as a brazing material.

When the insulating substrate 1 is made of, for example, an aluminum oxide sintered body, alumina (Al ₂ O ₃ ) or silica is used.
(SiO ₂ ), calcia (CaO), magnesia (MgO), etc. are mixed with a suitable organic solvent and solvent to prepare a ceramic raw material powder and the ceramic raw material powder is molded by a conventionally known press molding method. After that, the molded body is
It is manufactured by firing at a temperature of 1500 ° C.

An external lead terminal 5 made of a metallic material is temporarily fixed to the upper surface of the insulating substrate 1 through a glass layer 6 for sealing, and the external lead terminal 5 is a semiconductor element 3 housed inside. Is connected to an external electric circuit, each electrode of the semiconductor element 3 is connected to one end of the same through a bonding ear 7, and the other end is connected to an external electric circuit through a brazing material such as solder. It

The external lead terminals 5 are made of Kovar metal (Fe-
Ni-Co alloy), 42 alloy (Fe-Ni alloy), or other metal material, and the ingot (lump) of Kovar metal or the like is formed into a prescribed plate by adopting the conventionally known rolling or punching method. Formed into a shape.

It should be noted that the external lead terminal 5 is formed by depositing a metal of nickel, gold or the like, which has good conductivity and corrosion resistance, on the surface thereof by plating to a thickness of 1.0 to 20.0 μm. Effectively prevents oxidative corrosion of the external lead terminals 5, and also prevents external lead terminals 5 and bonding wires 7
And good electrical connection with an external electric circuit can be achieved. Therefore, it is preferable to deposit nickel, gold or the like on the surface of the external lead terminal 5 by plating to a thickness of 1.0 to 20.0 μm.

On the upper surface of the insulating base body 1 to which the external lead terminals 5 are temporarily fixed, the lid body 2 is attached to the lower surface of the lid body 2 for sealing, and on the upper surface of the insulating base body 1. The adhered glass layer 6 and the glass layer 6 are joined together by fusion, whereby a container 4 composed of an insulating base 1 and a lid 2 is formed.
The semiconductor element 3 is hermetically sealed inside.

The lid 2 is an aluminum oxide sintered body,
If it is made of an electrically insulating material such as a mullite sintered body, an aluminum nitride sintered body, or a silicon carbide sintered body, for example, if it is made of an aluminum oxide sintered body, the same method as that for the insulating substrate 1, that is, alumina is used. , Silica, calcia, magnesia, etc., an appropriate organic solvent, a solvent is added and mixed to prepare a ceramic raw material powder, and the ceramic raw material powder is molded by a conventionally known press molding method. It is manufactured by firing at a temperature.

Further, the lid 2 has a protrusion 2a formed on a surface thereof which is in contact with a space for housing a semiconductor element.

The projections 2a are thinned to 0.4 mm or less in the lid body 2 and act as a reinforcing member for preventing the lid body 2 from trying to bend due to the application of an external force. After the semiconductor element 3 is housed in an airtight manner, even if an external force is applied to the lid body 2, the lid body 2 is never bent and damaged inside, and as a result, the inside of the vessel is completely hermetically sealed. , Semiconductor element 3 housed inside
Can be operated normally and stably for a long period of time.

Further, since the lid body 2 is hardly bent by the protrusion 2a, the sealing glass layers 6 and 8 caused by the bending of the lid body 2 are hardly damaged. It is possible to completely seal the container for housing

If the area of the projection 2a provided on the lid 2 is less than 0.01 mm ² and the height is less than 0.05 mm, it is difficult to effectively prevent the lid 2 from bending. The area is preferably 0.01 mm ² or more and the height is preferably 0.05 mm or more. If the protrusion 2a is provided in the central portion of the lid body 2 in a square shape, a rectangular shape, or a cross shape, the bending of the lid body 2 can be very effectively prevented.

On the other hand, the glass layer 6 for sealing which is adhered to the upper surface of the insulating base 1 and the glass layer 8 which is adhered to the lower surface of the lid 2 are made of aluminum oxide as the insulating base 1 and the lid 2, respectively. Lead oxide 50.0 to 60.0 when composed of a porous sintered body
% By weight, silicon oxide 1.0 to 5.0% by weight, boron oxide 3.0
To 13.0 wt%, bismuth oxide 3.0 to 13.0 wt%,
10.0 to 20.0% by weight of cordierite as a filler,
A glass containing 10.0 to 20.0% by weight of a tin titanate-based compound is preferably used, and both glass layers 6 and 8 are heated and melted to be integrated into a container 4 composed of an insulating substrate 1 and a lid 2. The semiconductor element 3 is hermetically sealed.

The glass layers 6 and 8 for sealing have a low softening and melting temperature of about 400 ° C. Therefore, the glass layers 6 and 8 for sealing are
When the semiconductor element 3 is hermetically sealed in the container 4 composed of the insulating base 1 and the lid 2 by melting and integrating 8 with each other, the heat for melting the sealing glass layers 6 and 8 in the semiconductor element 3 is used. Is applied, it does not cause thermal damage to the semiconductor element 3 or thermal change in its characteristics, and
Can be operated normally and stably.

The glass layers 6 and 8 for sealing also have a thermal expansion coefficient of 7.1 × 10 ⁻⁶ / ° C., and the insulating substrate 1 and the lid body are
Coefficient of thermal expansion of aluminum oxide-based sintered compacts that constitute No. 2
(6.5 to 7.5 × 10 ^-6 / ℃)
When the semiconductor element 3 is hermetically sealed inside the container 4 composed of the insulating base 1 and the lid 2, the glass layers 6 and 8 for sealing the 1 and the lid 2 are fused and integrated. The container 4 with the lid 2 and the glass layers 6 and 8 for sealing made extremely strong.
The semiconductor element 3 can be completely hermetically sealed inside.

Thus, according to the package for accommodating a semiconductor element of the present invention, the semiconductor element 3 is attached and fixed to the bottom surface of the recess 1a of the insulating substrate 1 and each electrode of the semiconductor element 3 is connected to the external lead terminal 5 by the bonding wire 7. After that, the sealing glass layers 6 and 8 having the insulating substrate 1 and the lid body 2 adhered to the respective opposing main surfaces thereof are heated and melted, and bonded to form the insulating substrate 1 and The semiconductor element 3 is hermetically sealed in the container 4 composed of the lid 2 and the semiconductor device as a product is completed.

The present invention is not limited to the above-mentioned embodiments, and various modifications can be made without departing from the scope of the present invention.

[0028]

According to the package for accommodating semiconductor elements of the present invention, since the projections are formed on the surface of the lid constituting the container for accommodating the semiconductor elements, which is in contact with the space for accommodating the semiconductor elements, the lid is formed. Even if the thickness of the body is as thin as 0.4 mm or less, the lid will not bend due to the application of external force,
As a result, there is no possibility that the lid will be damaged due to bending, and the container consisting of the insulating base and the lid will be completely hermetically sealed, and the semiconductor element housed inside will be normally and stably for a long period of time. Can be activated.

[Brief description of drawings]

FIG. 1 is a cross-sectional view showing an embodiment of a semiconductor element housing package of the present invention.

FIG. 2 is a cross-sectional view of a conventional semiconductor element housing package.

[Explanation of symbols]

 1 ... Insulating substrate 2 ... Lid 2a ... Protrusion 3 ... Semiconductor element 4 ... Container 5 ... External lead terminal

Claims (1)

[Claims] 1. A semiconductor element housing package comprising an insulating base and a lid, and having a cavity for housing a semiconductor element therein, wherein the lid has a thickness of 0.4 mm or less and a semiconductor. A package for accommodating a semiconductor element, characterized in that a protrusion is formed on a surface facing a space for accommodating the element.