JPH0645255A - Method for forming thin film - Google Patents
Method for forming thin filmInfo
- Publication number
- JPH0645255A JPH0645255A JP4108298A JP10829892A JPH0645255A JP H0645255 A JPH0645255 A JP H0645255A JP 4108298 A JP4108298 A JP 4108298A JP 10829892 A JP10829892 A JP 10829892A JP H0645255 A JPH0645255 A JP H0645255A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- nitrogen
- hydrogen gas
- atmosphere
- plasma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Chemical Vapour Deposition (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、各種センサ用の薄膜の
形成に対して、プラズマ前処理を用いる薄膜形成法に関
するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thin film forming method using plasma pretreatment for forming thin films for various sensors.
【０００２】[0002]
【従来の技術】従来、バッチ式プラズマＣＶＤ法にて、
基板に薄膜を形成する際に、薄膜の形成直前には、真空
槽内部の大気を排気する（イ）高真空排気と、続いて
（ロ）窒素ガス、水素ガス等による置換処理が、一般的
に行われていた。2. Description of the Related Art Conventionally, in a batch type plasma CVD method,
When forming a thin film on a substrate, immediately before forming the thin film, the air inside the vacuum chamber is evacuated (a) high vacuum evacuation, and (b) replacement treatment with nitrogen gas, hydrogen gas, etc. is generally performed. Was done in.
【０００３】[0003]
【発明が解決しようとする課題】これには次のような欠
点があった。 （イ）基板の装着時の大気の影響を受けやすい。 （ロ）形成された薄膜の特性及び再現性に問題がある。 （ハ）高真空排気装置を必要とする。 本発明は、これらの欠点を除くために、なされたもので
ある。However, this has the following drawbacks. (A) It is easily affected by the atmosphere when the board is mounted. (B) There is a problem in the characteristics and reproducibility of the formed thin film. (C) A high vacuum exhaust device is required. The present invention has been made to eliminate these drawbacks.
【０００４】[0004]
【課題を解決するための手段】本発明による薄膜形成法
は、バッチ式プラズマＣＶＤ法にて、基板に薄膜を形成
する際に、この薄膜の形成直前に窒素または水素等のガ
スにより、プラズマ放電を起こすものである。A thin film forming method according to the present invention is a batch type plasma CVD method in which a thin film is formed on a substrate by a plasma discharge by a gas such as nitrogen or hydrogen immediately before forming the thin film. Is what causes
【０００５】[0005]
【作用】薄膜の形成直前に窒素または水素ガスなどによ
るプラズマ放電により、真空槽内部の残留ガスの除去等
の内部雰囲気を改善し、薄膜の特性及び再現性の向上が
出来る。また、水素ガスによるプラズマ放電の場合に
は、基板の洗浄効果も期待できる。The plasma discharge using nitrogen or hydrogen gas immediately before the formation of the thin film improves the internal atmosphere such as removal of residual gas in the vacuum chamber, and improves the characteristics and reproducibility of the thin film. In the case of plasma discharge using hydrogen gas, a cleaning effect on the substrate can be expected.
【０００６】[0006]
【実施例】以下本発明の一実施例について説明する。 （イ）プラズマＣＶＤ装置に例えばＳｉウエハ基板を装
着し、真空槽内部の大気を排気する。 （ロ）真空排気の終了後、窒素ガス又は水素ガスなどを
用いて真空槽内部の置換処理を１５〜３０分間、行う。 （ハ）真空槽内部の圧力を０．３〜１．０Ｔｏｒｒに
て、０．０４〜０．２Ｗ／ｃｍ２の高周波電力を印荷
し、プラズマ放電を５〜１５分間、発生させる。 （ニ）プラズマ放電終了後、薄膜形成に必要なガスに切
換え、再度プラズマ放電により薄膜を形成する。 本発明は以上のような方法で、真空槽内部の雰囲気を改
善し、形成した薄膜の特性及び再現性を向上させる。EXAMPLE An example of the present invention will be described below. (A) For example, a Si wafer substrate is mounted on the plasma CVD apparatus, and the atmosphere inside the vacuum chamber is exhausted. (B) After the evacuation is completed, the substitution process inside the vacuum chamber is performed for 15 to 30 minutes by using nitrogen gas or hydrogen gas. (C) A high frequency power of 0.04 to 0.2 W / cm 2 is applied at a pressure of 0.3 to 1.0 Torr in the vacuum chamber, and plasma discharge is generated for 5 to 15 minutes. (D) After the plasma discharge is completed, the gas necessary for forming the thin film is changed, and the thin film is formed again by the plasma discharge. The present invention improves the atmosphere inside the vacuum chamber and improves the characteristics and reproducibility of the formed thin film by the above method.
【０００７】[0007]
【発明の効果】プラズマＣＶＤ法を用いて薄膜を形成す
る際に、この薄膜の形成直前に窒素または水素ガスによ
るプラズマ放電を発生させる事により、薄膜の特性及び
再現性の向上ができる。When a thin film is formed using the plasma CVD method, the characteristics and reproducibility of the thin film can be improved by generating a plasma discharge with nitrogen or hydrogen gas immediately before forming the thin film.
Claims (1)
薄膜を形成する際に、この薄膜の形成直前に窒素または
水素等のガスにより、プラズマ放電を起こすことを特徴
とする薄膜形成法。1. A method for forming a thin film, characterized in that when a thin film is formed on a substrate by a batch type plasma CVD method, a plasma discharge is caused by a gas such as nitrogen or hydrogen immediately before forming the thin film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4108298A JPH0645255A (en) | 1992-03-17 | 1992-03-17 | Method for forming thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4108298A JPH0645255A (en) | 1992-03-17 | 1992-03-17 | Method for forming thin film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0645255A true JPH0645255A (en) | 1994-02-18 |
Family
ID=14481148
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4108298A Pending JPH0645255A (en) | 1992-03-17 | 1992-03-17 | Method for forming thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0645255A (en) |
-
1992
- 1992-03-17 JP JP4108298A patent/JPH0645255A/en active Pending
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A621 | Written request for application examination |
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