JPH06163484A - Semiconductor manufacturing device - Google Patents
Semiconductor manufacturing deviceInfo
- Publication number
- JPH06163484A JPH06163484A JP30741992A JP30741992A JPH06163484A JP H06163484 A JPH06163484 A JP H06163484A JP 30741992 A JP30741992 A JP 30741992A JP 30741992 A JP30741992 A JP 30741992A JP H06163484 A JPH06163484 A JP H06163484A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- hydrogen
- plasma
- wafer
- reaction tube
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
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- Drying Of Semiconductors (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は，半導体製造装置，特に
ウェハの表面に付着した自然酸化膜などの不純物層を除
去するのに用いられる前処理装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor manufacturing apparatus, and more particularly to a pretreatment apparatus used for removing an impurity layer such as a natural oxide film attached to the surface of a wafer.
【０００２】近年の半導体製造装置には，装置内で，ウ
ェハを大気に曝すことなく，前処理と膜成長とを行うこ
とが要求されている。そのため，膜成長前の清浄な表面
を露出させるための前処理を装置内で行う必要がある。In recent semiconductor manufacturing equipment, it is required to perform pretreatment and film growth in the equipment without exposing the wafer to the atmosphere. Therefore, it is necessary to perform pretreatment in the device to expose a clean surface before film growth.
【０００３】[0003]
【従来の技術】従来の前処理装置には，装置内でフッ化
水素（ＨＦ）によりウェハ表面の自然酸化膜を除去する
際に，ウェハ表面に別の不純物が再付着してしまう，と
いう問題があった。2. Description of the Related Art In a conventional pretreatment apparatus, another impurity is redeposited on the wafer surface when the native oxide film on the wafer surface is removed by hydrogen fluoride (HF) in the apparatus. was there.
【０００４】そこで，従来，フッ化水素（ＨＦ）により
ウェハ表面の自然酸化膜を除去する際に再付着した不純
物を別の前処理装置にて除去していた。Therefore, conventionally, the impurities re-deposited when removing the natural oxide film on the wafer surface by hydrogen fluoride (HF) have been removed by another pretreatment device.
【０００５】[0005]
【発明が解決しようとする課題】従来の前処理方法に
は，自然酸化膜の除去，再付着不純物の除去，とい
う２段階の前処理を行う必要があるので，前処理の効率
が低く，スループットが低い，という問題があった。The conventional pretreatment method requires a two-step pretreatment of removing a native oxide film and removing redeposited impurities, resulting in low pretreatment efficiency and throughput. There was a problem that was low.
【０００６】本発明は，この問題点を解決して，同一装
置内で自然酸化膜の除去と，それに伴う再付着不純物の
除去とを同時に行うことができるようにして，前処理の
効率を高めると共にスループットを向上させることので
きる，半導体製造装置，特にウェハの表面に付着した自
然酸化膜などの不純物層を除去するのに用いられる前処
理装置を提供することを目的とする。The present invention solves this problem and makes it possible to simultaneously remove the native oxide film and the accompanying redeposited impurities in the same apparatus, thereby improving the efficiency of pretreatment. At the same time, it is an object of the present invention to provide a semiconductor manufacturing apparatus capable of improving throughput, particularly a pretreatment apparatus used for removing an impurity layer such as a natural oxide film attached to the surface of a wafer.
【０００７】[0007]
【課題を解決するための手段】上記の目的を達成するた
めに，本発明は，次のように構成する。 （１）ウェハの表面に付着した自然酸化膜などの不純物
層を除去するのに用いられる前処理装置であって，内部
に水素ガスが導入され，外部から高周波電力が印加され
て水素プラズマを生成するプラズマ反応管と，該プラズ
マ反応管中に設けられ，フッ化水素ガスをウェハ表面の
近傍まで導入するガス導入管と，該ガス導入管からフッ
化水素ガスが導入され，前記プラズマ反応管から水素プ
ラズマが導入され，内部に設けられたステージ上に載置
されたウェハの表面に付着した自然酸化膜および再付着
不純物を除去する処理室とを備え，前記プラズマ反応管
および前記ガス導入管は，フッ化水素ガスおよび水素プ
ラズマによるエッチング量の非常に少ない絶縁物材料で
構成されているように構成する。In order to achieve the above object, the present invention is configured as follows. (1) A pretreatment device used to remove an impurity layer such as a natural oxide film adhering to the surface of a wafer, in which hydrogen gas is introduced inside and high-frequency power is applied from the outside to generate hydrogen plasma. Plasma reaction tube, a gas introduction tube provided in the plasma reaction tube for introducing hydrogen fluoride gas to the vicinity of the wafer surface, and hydrogen fluoride gas introduced from the gas introduction tube. The plasma reaction tube and the gas introduction tube are provided with a processing chamber into which hydrogen plasma is introduced and which removes a natural oxide film and redeposited impurities attached to the surface of a wafer placed on a stage provided inside. , An insulating material with a very small amount of etching by hydrogen fluoride gas and hydrogen plasma.
【０００８】（２）前記（１）において，前記処理室の
内壁が，フッ化水素ガスおよび水素プラズマによるエッ
チング量の非常に少ない絶縁物材料から成る保護カバー
で覆われているように構成する。(2) In the above (1), the inner wall of the processing chamber is covered with a protective cover made of an insulating material having a very small etching amount by hydrogen fluoride gas and hydrogen plasma.
【０００９】[0009]
【作用】本発明に係る前処理装置では，プラズマ反応管
を，フッ化水素ガスおよび水素プラズマによるエッチン
グ量の非常に少ない絶縁物材料で構成しているので，プ
ラズマ反応管の管壁からの不純物の発生量を極めて少な
くすることができる。その結果，フッ化水素（ＨＦ）に
よりウェハ表面の自然酸化膜を除去しながら，ウェハ表
面に再付着する不純物を水素プラズマによって除去する
ことが可能になる。In the pretreatment apparatus according to the present invention, since the plasma reaction tube is made of an insulating material having a very small etching amount by hydrogen fluoride gas and hydrogen plasma, impurities from the tube wall of the plasma reaction tube are It is possible to extremely reduce the generation amount of. As a result, it is possible to remove the native oxide film on the wafer surface with hydrogen fluoride (HF), while removing the impurities redeposited on the wafer surface with hydrogen plasma.
【００１０】すなわち，フッ化水素（ＨＦ）により自然
酸化膜を除去されたウェハ表面は，フッ素原子でターミ
ネイトされているので，低温のエピタキシャル成長を行
った時の欠陥の原因になりやすいが，本発明に係る前処
理装置では，フッ化水素（ＨＦ）により自然酸化膜が除
去されたウェハ表面は，水素プラズマにより水素原子で
ターミネイトされるので，低温のエピタキシャル成長を
行っても，容易にシリコン原子と置換するため，高品質
のエピタキシャル層を成長することができる。That is, since the surface of the wafer from which the natural oxide film has been removed by hydrogen fluoride (HF) is terminated by fluorine atoms, it is likely to cause defects during low temperature epitaxial growth. In the pretreatment apparatus according to the first aspect, the wafer surface from which the natural oxide film has been removed by hydrogen fluoride (HF) is terminated by hydrogen atoms by hydrogen plasma, so even if low-temperature epitaxial growth is performed, it is easily replaced with silicon atoms. Therefore, a high quality epitaxial layer can be grown.
【００１１】また，プラズマ反応管中に，フッ化水素ガ
スおよび水素プラズマによるエッチング量の非常に少な
い絶縁物材料から成り，フッ化水素（ＨＦ）ガスをウェ
ハ表面の近傍まで導入するガス導入管を設けるようにし
ている。これにより，フッ化水素（ＨＦ）をウェハ表面
に付着した自然酸化膜の除去に効率的に使用することが
可能になる。しかも，ガス導入管は，フッ化水素ガスお
よび水素プラズマによるエッチング量の非常に少ない絶
縁物材料で構成されているから，ガス導入管を設けるこ
とによって，不純物の発生量が増すこともない。In the plasma reaction tube, a gas introduction tube made of an insulating material having a very small etching amount by hydrogen fluoride gas and hydrogen plasma and introducing hydrogen fluoride (HF) gas up to the vicinity of the wafer surface is provided. I am trying to provide it. As a result, hydrogen fluoride (HF) can be efficiently used to remove the natural oxide film attached to the wafer surface. Moreover, since the gas introduction pipe is made of an insulating material having a very small amount of etching by hydrogen fluoride gas and hydrogen plasma, the gas introduction pipe does not increase the amount of impurities generated.
【００１２】さらに，本発明に係る前処理装置では，処
理室の内壁を，フッ化水素ガスおよび水素プラズマによ
るエッチング量の非常に少ない絶縁物材料から成る保護
カバーで覆うようにしている。これにより，不純物の発
生を極めて少なくすることが可能になる。この点から
も，フッ化水素（ＨＦ）により自然酸化膜が除去された
ウェハ表面に再付着不純物層が形成されにくくなる。Further, in the pretreatment apparatus according to the present invention, the inner wall of the treatment chamber is covered with a protective cover made of an insulating material having a very small etching amount by hydrogen fluoride gas and hydrogen plasma. This makes it possible to extremely reduce the generation of impurities. From this point as well, it becomes difficult for the redeposited impurity layer to be formed on the wafer surface from which the natural oxide film has been removed by hydrogen fluoride (HF).
【００１３】[0013]
【実施例】図１は，本発明の一実施例を示す図である。
図中，１はプラズマ反応管，２はガス導入口，３はガス
導入管，４は電極，５は電極，６はＲＦ電源，７は水素
プラズマ，８は処理室，９は排気口，１０はステージ，
１１はヒータ，１２はウェハ，１３は保護カバーであ
る。FIG. 1 is a diagram showing an embodiment of the present invention.
In the figure, 1 is a plasma reaction tube, 2 is a gas inlet, 3 is a gas inlet, 4 is an electrode, 5 is an electrode, 6 is an RF power source, 7 is hydrogen plasma, 8 is a processing chamber, 9 is an exhaust port, 10 Is the stage,
11 is a heater, 12 is a wafer, and 13 is a protective cover.
【００１４】以下，図１に示す本発明に係る前処理装置
を説明する。プラズマ反応管１，ガス導入管３，および
保護カバー１３は，フッ化水素ガスおよび水素プラズマ
によるエッチング量の非常に少ない絶縁物，例えば高純
度アルミナから成る。保護カバー１３の材料としては，
ＳｉＣコーティングしたグラファイトを用いてもよい。The pretreatment apparatus according to the present invention shown in FIG. 1 will be described below. The plasma reaction tube 1, the gas introduction tube 3, and the protective cover 13 are made of an insulator, such as high-purity alumina, which has a very small etching amount by hydrogen fluoride gas and hydrogen plasma. As the material of the protective cover 13,
SiC coated graphite may be used.
【００１５】プラズマ反応管１の周囲には，半周ずつ取
り巻くように電極４および５が設けられている。電極４
にはＲＦ電源６が接続されており，電極５は接地されて
いる。ガス導入口２から水素（Ｈ2 ）ガスが導入される
と，電極４と電極５との間に印加される高周波電力によ
り，プラズマ反応管１の内部に水素プラズマ７が生成さ
れる。Around the plasma reaction tube 1, electrodes 4 and 5 are provided so as to surround each half of the circumference. Electrode 4
An RF power source 6 is connected to, and the electrode 5 is grounded. When hydrogen (H 2 ) gas is introduced from the gas inlet 2, hydrogen plasma 7 is generated inside the plasma reaction tube 1 by the high frequency power applied between the electrodes 4 and 5.
【００１６】一方，ガス導入管３からは，フッ化水素
（ＨＦ）ガスが，処理室８内に設けられたステージ１０
上に載置されたウェハ１２の表面近傍まで導入される。
このフッ化水素（ＨＦ）ガスにより，ウェハ１２表面に
付着した自然酸化膜が除去される。このとき，プラズマ
反応管１内で生成された水素プラズマ７が処理室８内へ
導入されるので，ウェハ１２表面に付着した自然酸化膜
が除去される際に再付着する不純物は，水素プラズマに
よって除去される。On the other hand, hydrogen fluoride (HF) gas is supplied from the gas introducing pipe 3 to the stage 10 provided in the processing chamber 8.
It is introduced to the vicinity of the surface of the wafer 12 placed on it.
This hydrogen fluoride (HF) gas removes the natural oxide film attached to the surface of the wafer 12. At this time, the hydrogen plasma 7 generated in the plasma reaction tube 1 is introduced into the processing chamber 8, so that the impurities re-deposited when the natural oxide film adhered to the surface of the wafer 12 is removed by the hydrogen plasma. To be removed.
【００１７】以上のプロセスにより，本発明に係る前処
理装置では，ウェハ表面に付着した自然酸化膜の除去を
しながら，再付着する不純物を除去することが可能にな
る。したがって，本発明によれば，従来２台の装置を用
いて行っていた前処理を１台の装置で行うことが可能に
なる。By the above process, the pretreatment apparatus according to the present invention can remove the redeposited impurities while removing the natural oxide film attached to the wafer surface. Therefore, according to the present invention, it becomes possible to perform the pretreatment, which was conventionally performed using two apparatuses, with one apparatus.
【００１８】以下，本発明に係る前処理装置を使用した
前処理の例を説明する。 ＨＦ流量 ：１０ｃｃ／ｍｉｎ Ｈ2 流量 ：５００ｃｃ／ｍｉｎ 圧力 ：０．１Ｔｏｒｒ 基板温度 ：〜１００℃ ＲＦ周波数 ：１３．５６ＭＨｚ ＲＦパワー ：２０Ｗ 処理時間 ：１０分間 以上の条件で，Ｓｉウェハ表面に付着した約１０Åの自
然酸化膜を除去したところ，不純物層の無い清浄な表面
を得ることができた。An example of pretreatment using the pretreatment apparatus according to the present invention will be described below. HF flow rate: 10 cc / min H 2 flow rate: 500 cc / min Pressure: 0.1 Torr Substrate temperature: -100 ° C. RF frequency: 13.56 MHz RF power: 20 W Processing time: 10 minutes Under the above conditions, the particles adhered to the Si wafer surface. After removing about 10Å of natural oxide film, a clean surface without impurity layer could be obtained.
【００１９】[0019]
【発明の効果】本発明によれば，ウェハの表面に付着し
た自然酸化膜などの不純物層を除去するのに用いられる
前処理装置において，同一装置内で自然酸化膜の除去
と，それに伴う再付着不純物の除去とを同時に行うこと
ができるようになるので，前処理の効率を高めると共に
スループットを向上させることができる。According to the present invention, in a pretreatment apparatus used to remove an impurity layer such as a natural oxide film attached to the surface of a wafer, the removal of the natural oxide film in the same apparatus and the accompanying re-treatment. Since it becomes possible to remove adhered impurities at the same time, the efficiency of pretreatment can be improved and the throughput can be improved.
【図１】本発明の一実施例を示す図である。FIG. 1 is a diagram showing an embodiment of the present invention.
１ プラズマ反応管 ２ ガス導入口 ３ ガス導入管 ４ 電極 ５ 電極 ６ ＲＦ電源 ７ プラズマ ８ 処理室 ９ 排気口 １０ ステージ １１ ヒータ １２ ウェハ １３ 保護カバー 1 Plasma Reaction Tube 2 Gas Inlet Port 3 Gas Inlet Tube 4 Electrode 5 Electrode 6 RF Power Supply 7 Plasma 8 Processing Chamber 9 Exhaust Port 10 Stage 11 Heater 12 Wafer 13 Protective Cover
Claims (2)
の不純物層を除去するのに用いられる前処理装置であっ
て，内部に水素ガスが導入され，外部から高周波電力が
印加されて水素プラズマを生成するプラズマ反応管と，
該プラズマ反応管中に設けられ，フッ化水素ガスをウェ
ハ表面の近傍まで導入するガス導入管と，該ガス導入管
からフッ化水素ガスが導入され，前記プラズマ反応管か
ら水素プラズマが導入され，内部に設けられたステージ
上に載置されたウェハの表面に付着した自然酸化膜およ
び再付着不純物を除去する処理室とを備え，前記プラズ
マ反応管および前記ガス導入管は，フッ化水素ガスおよ
び水素プラズマによるエッチング量の非常に少ない絶縁
物材料で構成されていることを特徴とする半導体製造装
置。1. A pretreatment device used to remove an impurity layer such as a natural oxide film attached to a surface of a wafer, wherein hydrogen gas is introduced into the interior of the wafer, and high-frequency power is applied from the outside to hydrogen plasma. A plasma reaction tube for generating
A gas introducing pipe provided in the plasma reaction tube for introducing hydrogen fluoride gas to the vicinity of the wafer surface, hydrogen fluoride gas is introduced from the gas introducing pipe, and hydrogen plasma is introduced from the plasma reaction tube, And a processing chamber for removing a natural oxide film and a redeposited impurity adhering to the surface of a wafer placed on a stage provided inside, wherein the plasma reaction tube and the gas introduction tube are provided with hydrogen fluoride gas and A semiconductor manufacturing apparatus characterized by being made of an insulating material having an extremely small etching amount by hydrogen plasma.
が，フッ化水素ガスおよび水素プラズマによるエッチン
グ量の非常に少ない絶縁物材料から成る保護カバーで覆
われていることを特徴とする半導体製造装置。2. The semiconductor manufacturing according to claim 1, wherein the inner wall of the processing chamber is covered with a protective cover made of an insulating material having a very small etching amount by hydrogen fluoride gas and hydrogen plasma. apparatus.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30741992A JPH06163484A (en) | 1992-11-18 | 1992-11-18 | Semiconductor manufacturing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30741992A JPH06163484A (en) | 1992-11-18 | 1992-11-18 | Semiconductor manufacturing device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH06163484A true JPH06163484A (en) | 1994-06-10 |
Family
ID=17968835
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP30741992A Withdrawn JPH06163484A (en) | 1992-11-18 | 1992-11-18 | Semiconductor manufacturing device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH06163484A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10233380A (en) * | 1996-12-16 | 1998-09-02 | Shin Etsu Handotai Co Ltd | Surface treatment of single silicon crystal and formation of single silicon crystalline thin film |
| WO1999004420A1 (en) * | 1997-07-18 | 1999-01-28 | Shin-Etsu Handotai Co., Ltd. | Process for cleaning silicon semiconductor substrates |
| EP2200073A1 (en) * | 2008-05-30 | 2010-06-23 | Canon Anelva Corporation | Method for forming silicide and apparatus for forming the silicide |
-
1992
- 1992-11-18 JP JP30741992A patent/JPH06163484A/en not_active Withdrawn
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10233380A (en) * | 1996-12-16 | 1998-09-02 | Shin Etsu Handotai Co Ltd | Surface treatment of single silicon crystal and formation of single silicon crystalline thin film |
| WO1999004420A1 (en) * | 1997-07-18 | 1999-01-28 | Shin-Etsu Handotai Co., Ltd. | Process for cleaning silicon semiconductor substrates |
| EP2200073A1 (en) * | 2008-05-30 | 2010-06-23 | Canon Anelva Corporation | Method for forming silicide and apparatus for forming the silicide |
| EP2200073A4 (en) * | 2008-05-30 | 2012-12-05 | Canon Anelva Corp | Method for forming silicide and apparatus for forming the silicide |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A300 | Withdrawal of application because of no request for examination |
Free format text: JAPANESE INTERMEDIATE CODE: A300 Effective date: 20000201 |