JPH0637403A - Semiconductor laser device - Google Patents

Abstract

PURPOSE:To obtain a semiconductor laser device having stable monitor currents, which are hardly changed with time, and high reliability by preventing the protrusion of gold-tin solder formed at the time of the temperature rise of die bonding to the rear of a semiconductor laser element by a gold film formed outside a tin film on the sub-mount side. CONSTITUTION:A gold film 7, a tin film 8 and a gold film 9 are formed in sandwich structure on the underside of a sub-mount 2 and a gold film II, a tin film 10 and a gold film 13 on a semiconductor-laser element 3 placing section on the top face of the sub-mount 2. Gold films 11, 12, 13 are formed outside the semiconductor-laser element 3 placing section on the top face of the sub- mount 2. The tin films 8, 10 form gold-tin solder among the tin films 8, 10 and the gold films 7, 9, 11, 13 at the time of the temperature rise of die bonding. However, since the area of the tin film 10 is made smaller than that of a semiconductor laser element 3 and the area of gold-tin solder after the completion of die bonding is also made smaller than that of the semiconductor laser element 3, only the gold films 12 appear on the rear 1 of the semiconductor laser element 3, thus preventing the protrusion of gold-tin solder.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor laser device, and more particularly to improving the reliability of a semiconductor laser device by preventing movement and deterioration of a solder material.

[0002]

2. Description of the Related Art FIG. 11 shows, for example, "Integrated phase-locked semiconductor laser" written by Yoshito Iwakazu and Takeshi Ikeda, Mitsubishi Electric Technical Report,
Vol.60, No.12, pp.27-31, 1986) is a perspective view showing a conventional semiconductor laser device, in which 1 is a silver block, 102 is a silicon (Si) submount, 3
Is a semiconductor laser device, 4 is a light emitting portion of the semiconductor laser device,
105a and 105b are the protruding portions of AuSi solder, 6
Is a gold wire.

Next, the assembling method will be described. The upper surface and the lower surface of the Si submount 102 are plated with gold in advance. Si submount 1 on silver block 1
02, and the semiconductor laser device 3 is sequentially mounted. Next, an appropriate load is applied on the semiconductor laser element 3 to 420
Heat to about ℃. By doing so, Au of Au plating on the upper surface and the lower surface of the Si submount 102 reacts with Si of the Si submount to form AuSi eutectic solder, and the Si submount 102 is formed on the silver block 1 by the solder. Laser element 4 is Si submount 10
It is die-bonded on 2. This AuSi eutectic solder is 4
Since the liquid phase (body) is formed at a temperature of about 20 ° C. and the load is applied at the time of die bonding, when the die bonding is completed and the temperature is returned to room temperature, the protruding portions 105a, 105a of the AuSi solder are formed.
05b is made.

[0004]

Since the conventional semiconductor laser device is manufactured as described above, the junction-down (J-down) is assembled so that the light emitting portion 4 of the semiconductor laser element is on the submount 102 side. At the time of assembly, there is a problem that light emitted from the rear surface is scattered by the protruding portion 105a of the AuSi solder. Further, since this solder material changes with time due to migration or the like, there is a problem that when the light emitted from the rear surface is received by the photodiode and used as a monitor current, the monitor current changes with time.

The first invention is made to solve the above problems, and prevents the solder formed on the submount side during die bonding from becoming larger than the area of the lower surface of the semiconductor laser device. Then, an object is to obtain a highly reliable semiconductor laser device in which the light emitted from the rear surface is not scattered by the solder.

The second invention is made to solve the above problems, and the solder formed on the semiconductor laser element side during the dyne bond becomes larger than the area of the lower surface of the semiconductor laser element. It is an object of the present invention to obtain a highly reliable semiconductor laser device in which light emitted from the rear surface is not scattered by solder.

A third aspect of the present invention has been made to solve the above-mentioned problems, in which the solder provided in advance on the submount is larger than the area of the lower surface of the semiconductor laser element when the die bond temperature rises. It is an object of the present invention to obtain a highly reliable semiconductor laser device in which light emitted from the rear surface is prevented from being scattered by solder.

A fourth aspect of the present invention is made to solve the above-mentioned problems, and the solder provided on the lower surface of the semiconductor laser element is provided so that the area of the lower surface of the semiconductor laser element is increased when the temperature of the bond is increased. It is an object of the present invention to obtain a highly reliable semiconductor laser device in which the light emitted from the rear surface is prevented from being scattered by the solder by preventing the light from spreading further.

[0009]

A semiconductor laser device according to a first aspect of the present invention is a die-bonding device in which a first gold film, a tin film and a third gold film are interposed between a submount and a semiconductor laser element. In the configuration for performing, the second gold film having the same thickness as the tin film is provided outside the tin film.

A semiconductor laser device according to a second aspect of the invention is a semiconductor laser device in which a first gold film, a tin film, and a third gold film are interposed between a submount and a semiconductor laser element to perform die bonding. A second gold film having the same thickness as the tin film is provided outside the tin film formed on the lower surface of the laser element.

A semiconductor laser device according to the third invention is
A seventh gold film having the same thickness as that of the gold-tin solder is provided on the outside of the gold-tin solder which is formed on the submount and is interposed between the submount and the semiconductor laser element.

According to a fourth aspect of the present invention, there is provided a semiconductor laser device having a seventh embodiment having the same thickness as the gold-tin solder outside a gold-tin solder which is interposed between the submount formed on the lower surface of the semiconductor laser element and the semiconductor laser element. It is provided with a gold film.

[0013]

The gold film provided on the outer side of the tin film on the submount side in the first aspect of the invention has an effect of preventing gold tin solder formed at the time of temperature rise for die bonding from flowing out to the rear surface of the semiconductor laser element.

The gold film provided outside the tin film on the semiconductor laser device side in the second aspect of the invention has an action of preventing gold-tin solder formed at the time of temperature rise for die bonding from flowing out to the rear surface of the semiconductor laser device.

The gold film provided on the outer side of the gold-tin solder formed on the submount according to the third aspect of the present invention has an action of preventing the gold-zu solder from flowing out to the rear surface of the semiconductor laser device at the time of temperature rise for die bonding. .

The gold film provided on the outer side of the gold-tin solder formed on the lower surface of the semiconductor laser element in the fourth invention has an action of preventing the gold-tin solder from flowing out to the rear surface of the semiconductor laser element at the time of temperature rise for die bonding. is there.

[0017]

Embodiment 1 An embodiment (corresponding to claim 1) of the first invention will be described below with reference to the drawings. In FIG. 1, 1 is, for example, a block made of silver, and 2 is a submount. For this, the Si submount in the conventional example can also be used, but for example, it has higher insulation and higher thermal conductivity. cBN
(Cubic Boron Nitride), diamond, SiC, Cu
W, AlN or the like can be used. Reference numeral 3 is a semiconductor laser element, 4 is a light emitting portion of the semiconductor laser element, and 6 is a gold wire. A submount 2 is arranged on the silver block 1 with a sandwich structure of a gold film 7, a tin film 8 and a gold film 9 interposed therebetween. Here, as the above-mentioned submount, the Si submount in the conventional example is usually gold-plated thereon, and when the temperature is raised, solder of gold silicon is formed, and the gold-tin solder of the present invention cannot be formed. Therefore, it is not suitable for the present invention.

A first gold film 11 is formed on the upper surface of the submount 2, and the area of the lower surface of the semiconductor laser element is equal to the upper surface of the first gold film 11 and the portion where the semiconductor laser element 3 is mounted. Equal or smaller area, for example, laser chip thickness 100 μm, chip area 300 μm × 500 μ
In the case of m, the first tin film 10 is formed in a region occupying about 90% of the chip area from the front end side, and the second gold film 12 is formed in the other portion, and the first tin film 10 and The third gold film 13 is formed on the second gold film 12, and the semiconductor laser element 3 is mounted on the third gold film 13. 1
Reference numerals 4 and 15 are surface electrodes of the semiconductor laser. This device
By increasing the temperature, the first tin film 10 and the gold films 11 and 13 above and below the first tin film 10 form gold-tin solder, whereby the semiconductor laser element 3 is die-bonded onto the submount 2. There is. 2 is a sectional view taken along the line AA ′ in FIG. 1, FIG. 3 is a front view of the semiconductor laser device after the temperature is elevated and die bonding is performed, and FIG. 4 is a sectional view thereof.

Next, the assembling method and operation will be described. On the lower surface of the submount 2, a sandwich structure of a gold film 7, a tin film 8 and a gold film 9 is provided. Further, a sandwich structure of the gold film 11, the tin film 10 and the gold film 13 is also provided on the upper surface of the submount 2 where the semiconductor laser element 3 is mounted. On the other hand, on the outer surface of the upper surface of the submount 2 where the semiconductor laser element is mounted, the gold films 11 and 1
It is composed of 2 and 13. That is, the tin film 10 is composed of the gold films 12 on both sides of the tin film 10 and the gold films 11 and 13 above and below the gold film 12.
Will be surrounded by. The thicknesses of the tin films 8 and 10 and the gold films 7, 9, 11 and 13 above and below the tin films 8 and 10 are set so that gold tin solder is formed when the temperature of the die bond is raised.

As shown in FIG. 3, when an appropriate load is applied from the upper surface of the semiconductor laser element and the temperature is raised to 280 ° C. or higher, for example, about 350 ° C. while flowing gas such as hydrogen and nitrogen, gold and tin are separated. Since the melting point of the alloy when the weight ratio is 80:20 is 280 ° C., the tin films 8 and 10 form gold-tin solder between the gold films 7 and 9 and 11 and 13 above and below the tin film 8 and 10 to form the semiconductor laser. The element 3 and the submount 2 and the submount 2 and the silver block 1 are die-bonded.

As shown in FIG. 2, since the tin film 10 has a smaller area than the semiconductor laser element 3, the area of the gold-tin solder 16a after die bonding is smaller than that of the semiconductor laser element 3. Therefore, as shown in FIG. 4, only the gold film 12 appears on the rear surface of the semiconductor laser element 3, and gold tin solder does not protrude. For this reason, the light emitted from the rear surface enters the photodiode of the monitor without being scattered by the solder, so that a highly reliable semiconductor laser device with little change over time can be realized.

Embodiment 2 An embodiment (corresponding to claim 3) of the second invention will be described below with reference to the drawings. In FIG. 5, the semiconductor laser device 3
A fourth gold film 20 is formed on the lower surface of the
A second tin film 19 is formed on the lower surface of the semiconductor laser element 3 in an area equal to or smaller than the area of the semiconductor laser element 3 and on the front end surface side of the semiconductor laser element 3, and in the other portion, a fifth tin film 19 is formed.
Gold film 21 is formed, the sixth gold film 18 is formed on the lower surfaces of the second tin film 19 and the fifth gold film 21, and the gold film 17 is formed on the surface under the sixth gold film 18. The formed submount 2 is provided, and the temperature of the second tin film 19 and the gold films 18 and 20 above and below the second tin film 19 form gold-tin solder, so that the semiconductor laser element 3 is placed on the submount 2. It has a configuration in which it is bonded.

As shown in FIG. 5, the tin film 19 is a gold film 18.
It has a structure sandwiched by the gold film 20. Further, the film thicknesses thereof are set so that gold-tin solder is constituted at the time of temperature rise for die bonding. FIG. 6 is a sectional view of the structure of FIG. 5 taken along the line BB '. The tin film 19 does not reach the rear end surface of the semiconductor laser element 3 and is cut in the middle, so that the area of the tin film 19 is smaller than the area of the lower surface of the semiconductor laser element 3. The film structure between the submount 2 and the block 1 is similar to that of the first embodiment of the invention.

In the assembling method of this embodiment, a suitable load is applied from the upper surface of the semiconductor laser device for die bonding, and a gas such as hydrogen or nitrogen is flown to raise the temperature to 280 ° C. or higher, for example, to about 350 ° C. Then tin film 19,8
Between the gold films 18 and 20 above and below the gold film 7, 9
Gold tin solder is formed between the two, and thereby die bonding is performed. Therefore, also in the second embodiment, as in the first embodiment, the light emitted from the rear surface enters the photodiode of the monitor without being scattered by the solder, so that a highly reliable semiconductor laser device with little change over time is realized. it can.

Embodiment 3 An embodiment (corresponding to claim 5) of the third invention will be described below with reference to the drawings. In FIG. 7, a gold tin solder film 22b is formed in a region on the upper surface of the submount 2 where the semiconductor laser element 3 is mounted, in a region equal to or smaller than the area of the lower face of the semiconductor laser 3, and in other regions. 7th
Is formed, and the semiconductor laser element 3 is placed on the gold-tin-solder film 22b and die-bonded. In this embodiment, the submount 2 also has a gold tin solder film 22a provided in advance on the lower surface thereof, and is mounted on the silver block 1 by the gold tin solder film 22a. FIG. 8 is a sectional view of the structure of FIG. 7 taken along the line CC ′.

As shown in FIG. 8, the area of the gold-tin solder 22b is smaller than the area of the lower surface of the semiconductor laser element 3. Further, since the gold-tin solder 22b is surrounded by the gold film 23 having the same thickness, the temperature is raised to a temperature of 280 ° C. or higher to melt the gold-tin solder 22b to melt the laser element 3
The gold tin solder 22b does not stick out to the rear surface of the semiconductor laser element 3 when performing the dun-bonding. Therefore, since the light emitted from the rear end face of the semiconductor laser element 3 is not scattered by the gold-tin solder, a highly reliable semiconductor laser device having a stable monitor current with little change over time can be obtained.

Embodiment 4 An embodiment (corresponding to claim 7) of the fourth invention will be described below with reference to the drawings. In FIG. 9, the semiconductor laser device 3
An eighth gold film 14 is formed on the lower surface of the semiconductor laser device, and a region under the eighth gold film 14 that is equal to or smaller than the area of the lower surface of the semiconductor laser 3 and is on the front end face side of the semiconductor laser device. The gold-tin-solder 24a is formed on the substrate, the ninth gold film 25 is formed on the other portion, and the semiconductor laser element 3 is die-bonded onto the submount 2 by the gold-tin solder 24a. In this embodiment,
The submount 2 also has a gold tin solder film 24b provided in advance on its lower surface, and is mounted on the silver block 1 by the gold tin solder film 24b. FIG. 10 is a sectional view of the structure of FIG. 9 taken along the line DD ′.

As shown in FIG. 9, the area of the gold-tin solder 24b is smaller than the area of the lower surface of the semiconductor laser element 3. Further, since the gold-tin solder 24a is surrounded by the gold film 25 having the same thickness, when the temperature is raised to 280 ° C. or more to melt the gold-tin solder 24a and die-bond the laser element 3, the gold-tin solder 24a is formed. Does not protrude to the rear surface of the semiconductor laser element 3. Therefore, since the light emitted from the rear end face of the semiconductor laser element 3 is not scattered by the gold tin solder 24a, a highly reliable semiconductor laser device having a stable monitor current with little change over time can be obtained.

In the above-mentioned Examples 1 and 2, an example of forming a gold-tin solder by combining a gold film and a tin film is described, but other combinations such as a gold film and a silicon film can be used as solder. Gold silicon solder may be formed. Further, although the gold film is used as the film surrounding the solder film, this is not limited to the gold film, and another film, for example, a titanium film or a platinum film may be used. Further, in the above-mentioned Embodiments 3 and 4, an example of gold tin solder is shown as the solder film, but other solder such as lead tin solder or indium lead solder may be used.

Embodiments 5 to 8 In the above Embodiments 1 to 4, the case where the semiconductor laser device is mounted on the block or the stem via the submount has been described. However, the first to fourth inventions are the semiconductor laser devices. It can also be applied to a structure in which an element is directly mounted on a block or a stem, which are Examples 5 to 8 and correspond to claims 2, 4, 6, and 8.

[0031]

As described above, according to the first invention, the first gold film is formed on the upper surface of the submount, and the portion on the upper surface of the first gold film where the semiconductor laser element is mounted. The first tin film is formed in a region which is equal to or smaller than the area of the lower surface of the semiconductor laser device, and the second gold film is formed in the other part, and the first tin film and the second gold film are formed. A third gold film is formed thereon, a semiconductor laser element is mounted on the third gold film, and the first tin film and the gold films above and below the first tin film are heated to raise the gold-tin based solder. Is formed and the semiconductor laser element is die-bonded to the submount, and the solder that is formed on the submount side during die-bonding does not stick out to the rear end face of the semiconductor laser element, so it is stable with little change over time. Highly reliable semiconductor laser with high monitoring current There is an effect that location can be obtained.

According to the second invention, the fourth gold film is formed on the lower surface of the semiconductor laser element, and the lower surface of the fourth gold film has an area equal to or smaller than the area of the semiconductor laser element. A second tin film is formed on the front end face side of the semiconductor laser device, a fifth gold film is formed on the other part, and a sixth tin film is formed on the lower surfaces of the second tin film and the fifth gold film. Gold film is formed, and a submount is provided under the sixth gold film,
When the temperature is raised, the second tin film and the gold films above and below the second tin film are formed to form a gold-tin based solder, and the semiconductor laser element is formed on the submount by a die bond. The solder that is formed is
Since the semiconductor laser element is configured so as not to extend to the rear end face side, there is an effect that a highly reliable semiconductor laser device having a stable monitor current can be obtained.

According to the third aspect of the invention, a gold tin solder film is formed in a region equal to or smaller than the area of the lower surface of the semiconductor laser on a portion of the upper surface of the submount where the semiconductor laser element is mounted, and A seventh gold film is formed on the portion of, and the semiconductor laser element is mounted on the submount by gold tin solder and die-bonded,
Since the gold-tin-solder provided on the submount in advance does not stick out to the rear end face side of the semiconductor laser element during die bonding, a highly reliable semiconductor laser device having a stable monitor current can be obtained. .

According to the fourth aspect of the invention, the eighth gold film is formed on the lower surface of the semiconductor laser element, and the area under the eighth gold film is equal to or smaller than the area of the lower surface of the semiconductor laser. In addition, gold tin solder is formed in a region on the front end face side of the semiconductor laser element, and a ninth gold film is formed in the other portion, and the semiconductor laser element is die-bonded onto the submount by the gold tin solder. , Gold tin solder that was previously installed on the bottom surface of the semiconductor laser device,
It has a stable monitor current because it is configured not to protrude to the rear end face side of the semiconductor laser element during die bonding.
There is an effect that a highly reliable semiconductor laser device can be obtained.

[Brief description of drawings]

FIG. 1 is a front view of a semiconductor laser device according to an embodiment of the first invention (corresponding to claim 1) before the bonding.

FIG. 2 is a sectional view of a semiconductor laser device according to an embodiment of the first invention before die bonding.

FIG. 3 is a front view of a semiconductor laser device according to an embodiment of the first invention after die bonding.

FIG. 4 is a sectional view of a semiconductor laser device according to an embodiment of the first invention after die bonding.

FIG. 5 is a front view of a semiconductor laser device according to an embodiment of the second invention (corresponding to claim 3) before die bonding.

FIG. 6 is a sectional view of a semiconductor laser device according to an embodiment of the second invention before die bonding.

FIG. 7 is a front view of a semiconductor laser device according to an embodiment (corresponding to claim 5) of the third invention before die bonding.

FIG. 8 is a cross-sectional view of a semiconductor laser device according to an embodiment of the third invention before a dang bond.

FIG. 9 is a front view of a semiconductor laser device according to an embodiment (corresponding to claim 7) of the fourth invention after die bonding.

FIG. 10 is a sectional view of a semiconductor laser device according to an embodiment of the fourth invention after die bonding.

FIG. 11 is a perspective view showing a conventional semiconductor laser device.

[Explanation of symbols]

1 block (eg silver) 2 submount (eg cBN, diamond) 3 semiconductor laser device, 4 light emitting part of semiconductor laser device 6 gold wire 7, 9, 11 first gold film 12 second gold film 13 third Gold film 14,15 Surface electrode of semiconductor laser 17,18,20,21,24,25 Gold film 10,19 First tin film 14,15 Surface electrode of semiconductor laser 16a, 16b, 22a, 22b, 24a, 24b Gold-tin solder film 102 Si submounts 104a, 105b AuSi solder protrusion

Claims (10)

[Claims] 1. A semiconductor laser device having a semiconductor laser element, a submount on which the semiconductor laser element is mounted, and a block or a stem on which the submount is mounted, wherein a first gold film is formed on an upper surface of the submount. The area of the lower surface of the semiconductor laser element formed on the upper surface of the first gold film and on which the semiconductor laser element is mounted, or
A first tin film is formed in a smaller region, and a second gold film is formed in the other part of the part corresponding to the area of the lower surface, and the first tin film and the second gold film are formed. A third gold film is formed on the first gold film, and the semiconductor laser element is placed on the third gold film. The semiconductor laser device is characterized in that the solder is formed and the semiconductor laser element is die-bonded onto the submount. 2. A semiconductor laser device having a semiconductor laser element and a block or stem on which the semiconductor laser element is mounted, wherein a first gold film is formed on an upper surface of the block or stem, and the first gold film is formed. Is equal to the area of the lower surface of the semiconductor laser element on the upper surface of the semiconductor laser element,
A first tin film is formed in a smaller region, and a second gold film is formed in the other part of the part corresponding to the area of the lower surface, and the first tin film and the second gold film are formed. A third gold film is formed on the first gold film, and the semiconductor laser element is placed on the third gold film. The semiconductor laser device is characterized in that the solder is formed and the semiconductor laser element is die-bonded onto the block or the stem. 3. A semiconductor laser device having a semiconductor laser element, a submount on which the semiconductor laser element is mounted, and a block or a stem on which the submount is mounted, wherein a fourth gold film is formed on a lower surface of the semiconductor laser element. Is formed,
A second tin film is formed on the lower surface of the fourth gold film in a region equal to or smaller than the area of the lower surface of the semiconductor laser device, and on the front end face side of the semiconductor laser device, and the second tin film is formed on the lower surface. No. 5 for other parts of the corresponding parts
A gold film is formed, a sixth gold film is formed on the lower surfaces of the second tin film and the fifth gold film, a submount is provided under the sixth gold film, and the temperature is raised. Thus, a gold-tin based solder is formed by the second tin film and the gold films above and below the second tin film, and the semiconductor laser element is dumb-bonded onto the submount. 4. A semiconductor laser device having a semiconductor laser element and a block or stem for mounting the semiconductor laser element, wherein a fourth gold film is formed on a lower surface of the semiconductor laser element, and the fourth gold film is formed. A second tin film is formed on the lower surface of the semiconductor laser device in a region equal to or smaller than the area of the semiconductor laser device and on the front end face side of the semiconductor laser device. A fifth gold film is formed on the portion, a sixth gold film is formed on the lower surfaces of the second tin film and the fifth gold film, and a block or a stem is provided under the sixth gold film. When the temperature is raised, a gold-tin based solder is formed by the third block film and the gold films above and below the third block film, and the semiconductor laser device is dang-bonded on the block or stem. Conductor laser device. 5. A semiconductor laser device having a semiconductor laser element, a submount on which the semiconductor laser element is mounted, and a block or a stem on which the submount is mounted, wherein the semiconductor laser element on the upper surface of the submount is mounted. A gold tin solder film is formed in a region equal to or smaller than the area of the lower surface of the semiconductor laser, and a seventh gold film is formed in the other portion of the area corresponding to the area of the lower surface. A semiconductor laser device comprising a semiconductor laser element mounted on a gold-tin solder film and die-bonded onto the submount by the gold-tin solder. 6. A semiconductor laser device having a semiconductor laser element and a block or stem for mounting the semiconductor laser element, wherein a lower surface of the semiconductor laser is provided on a portion of the upper surface of the block or stem where the semiconductor laser element is mounted. A gold tin solder film is formed in a region equal to or smaller than the area, and a seventh gold film is formed in the other part of the part corresponding to the area of the lower surface, and the semiconductor laser is formed on the gold tin solder film. A semiconductor laser device, wherein an element is placed and die-bonded onto the block or stem by the gold-tin solder. 7. A semiconductor laser device having a semiconductor laser element, a submount on which the semiconductor laser element is mounted, and a block or a stem on which the submount is mounted, wherein an eighth gold film is formed on a lower surface of the semiconductor laser element. And a gold-tin solder film is formed under the eighth gold film in a region equal to or smaller than the area of the lower surface of the semiconductor laser and on the front end face side of the semiconductor laser device, and A ninth gold film is formed on the other part of the part corresponding to the area of the lower surface, and the semiconductor laser device is mounted on the submount and die-bonded on the submount by the gold-tin solder. A semiconductor laser device characterized by the above. 8. A semiconductor laser device having a semiconductor laser element and a block or stem for mounting the semiconductor laser element, wherein an eighth gold film is formed on a lower surface of the semiconductor laser element, and the eighth gold film is formed. A gold-tin-solder film is formed under the same area as the lower surface of the semiconductor laser device, or in a region smaller than the area, and in a region on the front end face side of the semiconductor laser device,
A ninth gold film is formed on the other part of the part corresponding to the area of the lower surface, the semiconductor laser element is mounted on the block or stem, and the gold tin solder is used to form the gold or tin on the block or stem. A semiconductor laser device characterized in that it is die-bonded to. 9. The semiconductor laser device according to claim 1, wherein the gold film is replaced with another type 1 metal film, and the tin film is replaced with another type 2 metal film. A semiconductor laser device characterized in that 10. The semiconductor laser device according to claim 5, wherein another gold alloy film is used instead of the gold-tin solder film, and another metal film is used instead of the gold film. A semiconductor laser device.