JPH0634256U - Semiconductor module - Google Patents

Semiconductor module

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Publication number
JPH0634256U
JPH0634256U JP7751692U JP7751692U JPH0634256U JP H0634256 U JPH0634256 U JP H0634256U JP 7751692 U JP7751692 U JP 7751692U JP 7751692 U JP7751692 U JP 7751692U JP H0634256 U JPH0634256 U JP H0634256U
Authority
JP
Japan
Prior art keywords
opening
resin
upper lid
semiconductor module
epoxy resin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7751692U
Other languages
Japanese (ja)
Other versions
JP2539143Y2 (en
Inventor
豊二 安田
俊秀 徳田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sansha Electric Manufacturing Co Ltd
Original Assignee
Sansha Electric Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sansha Electric Manufacturing Co Ltd filed Critical Sansha Electric Manufacturing Co Ltd
Priority to JP1992077516U priority Critical patent/JP2539143Y2/en
Publication of JPH0634256U publication Critical patent/JPH0634256U/en
Application granted granted Critical
Publication of JP2539143Y2 publication Critical patent/JP2539143Y2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Abstract

(57)【要約】 【目的】 樹脂封止半導体モジュールにおいて、封止樹
脂層のヒビ割れを防止して特性の向上を図る。 【構成】 電力用半導体チップ4と制御部品5を搭載
し、外部引き出し端子6を取り付けた回路基板を囲んで
樹脂封止を行うに際し、上蓋11a、側壁11b、内壁
11cより構成され、上蓋11aに開口部11dを有
し、かつ上蓋11aの開口部下縁に突出部16を一体成
形にて形成した樹脂ケース11を用いる。
(57) [Abstract] [Purpose] In a resin-sealed semiconductor module, the characteristics of the resin-sealed semiconductor module are improved by preventing cracks in the sealing resin layer. [Structure] When a power semiconductor chip 4 and a control component 5 are mounted and a resin board is enclosed by surrounding a circuit board to which external lead-out terminals 6 are attached, the upper cover 11a, a side wall 11b, and an inner wall 11c are formed. A resin case 11 having an opening 11d and having a protrusion 16 integrally formed on the lower edge of the opening of the upper lid 11a is used.

Description

【考案の詳細な説明】[Detailed description of the device]

【0001】[0001]

【産業上の利用分野】[Industrial applications]

この考案は、同一金属基板上に電力用半導体チップとこの半導体チップを制御 する制御部品とを搭載し、樹脂封止して得られる半導体モジュールに関するもの である。 The present invention relates to a semiconductor module obtained by mounting a power semiconductor chip and a control component for controlling the semiconductor chip on the same metal substrate and sealing them with resin.

【0002】[0002]

【従来の技術】[Prior art]

従来、半導体モジュールとしては例えば図2の断面図に示す構造のものが知ら れている。図3はこの半導体モジュールのケース取り付け前の回路基板を示す平 面図である。図において、1は全面に絶縁層(図示せず)を有する金属基板であ り、この金属基板1上のほぼ中央部から一方端にかけて凸形状の銅回路2が接着 半田付けされ、また他方端にかけて絶縁板上に銅回路パターンを印刷した凹形状 のプリント配線板3が接着シート等によって絶縁層上に接着されている。 Conventionally, as a semiconductor module, for example, one having a structure shown in the sectional view of FIG. 2 is known. FIG. 3 is a plan view showing the circuit board of this semiconductor module before mounting to the case. In the figure, reference numeral 1 is a metal substrate having an insulating layer (not shown) on the entire surface, and a convex copper circuit 2 is adhesively soldered from the substantially central portion of the metal substrate 1 to one end, and the other end is also provided. A concave printed wiring board 3 having a copper circuit pattern printed on the insulating plate is adhered onto the insulating layer by an adhesive sheet or the like.

【0003】 そして、金属基板1の銅回路2およびプリント配線板3の必要個所にクリーム 半田を印刷し、銅回路2上に電力用半導体チップ4を、またプリント配線板3の 上に表面実装部品である抵抗、IC、コンデンサー等の制御部品5を搭載し、さ らに金属基板1上の必要個所には外部引出し端子6を搭載してからリフロー炉で 全部品の半田付けを行い、その後回路間の結線7を行って図3のような回路基板 が得られる。Then, cream solder is printed on the copper circuit 2 and the printed wiring board 3 of the metal substrate 1 at the required positions, the power semiconductor chip 4 is mounted on the copper circuit 2, and the surface mount component is mounted on the printed wiring board 3. Control parts 5 such as resistors, ICs, capacitors, etc. are mounted, and external lead-out terminals 6 are mounted on necessary parts on the metal substrate 1, and then all parts are soldered in a reflow furnace, and then the circuit is completed. The connection 7 between them is performed to obtain a circuit board as shown in FIG.

【0004】 次に、回路基板の周縁および上方を上蓋11aと側壁11bおよび内壁11c を一体成形した樹脂ケース11で覆い、側壁11bを金属基板1にシリコンゴム 等の接着剤で接着する。この時、予め電力用半導体チップ4と制御部品5を囲む ように所定の位置に設けられている内壁11c、11cをも金属基板1上に接着 する。そして、ケース11の上蓋11aに設けられている開口部11dから内壁 11c、11c内にシリコンゴムを充填し、120〜150℃で加熱硬化してシ リコンゴム層12を形成する。次いで、シリコンゴム層12の上および側壁11 bと内壁11cとの間に開口部11dからエポキシ樹脂を充填し、120〜15 0℃で加熱硬化してエポキシ樹脂層13を形成することにより図2のような半導 体モジュールが得られる。なお、上記絶縁層を有する金属基板に銅回路および予 め制御部品を表面実装したプリント配線板を取り付ける代わりに、金属基板に絶 縁物を介して銅回路を配置し、この銅回路上に電力用半導体チップ、制御部品を 載置し、半田付けすることもある。Next, the periphery and upper part of the circuit board are covered with a resin case 11 integrally formed with the upper lid 11a, the side wall 11b and the inner wall 11c, and the side wall 11b is bonded to the metal substrate 1 with an adhesive such as silicon rubber. At this time, the inner walls 11c and 11c provided in predetermined positions so as to surround the power semiconductor chip 4 and the control component 5 in advance are also bonded onto the metal substrate 1. Then, silicone rubber is filled into the inner walls 11c, 11c through the opening 11d provided in the upper lid 11a of the case 11 and heat-cured at 120 to 150 ° C to form the silicone rubber layer 12. Next, by filling the epoxy resin through the opening 11d between the upper side of the silicone rubber layer 12 and between the side wall 11b and the inner wall 11c, and heat curing at 120 to 150 ° C. to form the epoxy resin layer 13, as shown in FIG. A semiconductor module such as Instead of mounting the copper circuit and the printed wiring board on which the pre-control parts are surface-mounted on the metal board having the above-mentioned insulating layer, place the copper circuit on the metal board via an insulator, and place the power on the copper circuit. Sometimes semiconductor chips and control parts are mounted and soldered.

【0005】[0005]

【考案が解決しようとする課題】[Problems to be solved by the device]

しかしながら、上記のような半導体モジュールを得るに当たって、従来はシリ コンゴム層の上にエポキシ樹脂を充填する際に、粘度の高いエポキシ樹脂が均一 に入らず、図4に示すようにケース11の上蓋11aの下部に空気層14が生じ ることが多く、また、充填したエポキシ樹脂を加熱硬化させるときに、先に形成 したシリコンゴム層12も加熱されて膨張することがある。このため、膨張する シリコンゴム層12と空気層14との間のエポキシ樹脂層13は他の個所よりそ の厚みが薄くなり、さらに加熱硬化時にシリコンゴム層の膨張による力がエポキ シ樹脂層の薄い部分に加わってヒビ15が入るという欠点がある。 However, when the semiconductor module as described above is obtained, conventionally, when the epoxy resin is filled on the silicone rubber layer, the high-viscosity epoxy resin does not uniformly enter, and as shown in FIG. An air layer 14 is often formed in the lower part of the resin, and when the filled epoxy resin is cured by heating, the silicone rubber layer 12 previously formed may also be heated and expanded. For this reason, the epoxy resin layer 13 between the expanding silicon rubber layer 12 and the air layer 14 has a smaller thickness than other parts, and the force due to the expansion of the silicone rubber layer during the heat curing causes the epoxy resin layer 13 to move. There is a drawback that cracks 15 will enter the thin portion.

【0006】 また、このようにして得られる半導体モジュールは、これが用いられる例えば エアコンのような機器類の小型化に伴って薄型化されつつあるが、そのような薄 型半導体モジュールを機器に取り付ける際に、開口部11dに力が加わると図4 のエポキシ樹脂層13に見られるヒビ15がさらに大きくなったり、このヒビ割 れのためにエポキシ樹脂層が完全に分離することがあり、このため耐湿特性が低 下したり、外部配線用端子部材の沿面距離が短くなって耐電圧の低いものになる という問題があった。Further, the semiconductor module thus obtained is becoming thinner due to the miniaturization of equipment such as an air conditioner in which it is used. When such a thin semiconductor module is attached to equipment, In addition, when a force is applied to the opening 11d, the crack 15 seen in the epoxy resin layer 13 in FIG. 4 may become larger, or the crack may cause the epoxy resin layer to be completely separated. There were problems that the characteristics would deteriorate and the creepage distance of the external wiring terminal member would become shorter, resulting in a lower withstand voltage.

【0007】[0007]

【課題を解決するための手段】[Means for Solving the Problems]

この考案は上記に鑑みて、電力用半導体チップおよび制御部品を搭載した回路 基板上を樹脂封止する際に、開口部を有する上蓋、側壁、内壁とともに上蓋開口 部下縁に突出部を一体成形により形成した樹脂ケースを用いるならば、従来の半 導体モジュールの問題点を解消できることを見出したものである。 In view of the above, the present invention is made by integrally molding a protrusion at the lower edge of the upper lid opening, the side wall, and the inner wall when the resin is sealed on the circuit board on which the power semiconductor chip and the control component are mounted. It was found that the problems of the conventional semiconductor module can be solved by using the formed resin case.

【0008】 即ち、この考案は絶縁層を有する金属基板又は絶縁基板を接着した金属基板の 上に積層した銅回路上に電力用半導体チップおよび制御部品を載置固定し、さら に一方端がケース上部外方に引き出される端子部材の他方端を上記金属基板上に 取り付けて得た回路基板を、上蓋と側壁および内壁より構成され、上蓋に開口部 を有し、かつ上蓋の開口部下縁に突出部を一体成形にて形成した樹脂ケースで覆 い、ケース内を樹脂封止してなる半導体モジュールを提供するものである。That is, the present invention mounts and fixes a power semiconductor chip and a control component on a copper circuit laminated on a metal substrate having an insulating layer or a metal substrate to which an insulating substrate is adhered, and further, one end is a case. A circuit board obtained by mounting the other end of the terminal member that is pulled out outward on the metal board is composed of an upper lid, a side wall, and an inner wall, has an opening in the upper lid, and projects to the lower edge of the opening of the upper lid. Provided is a semiconductor module in which a portion is covered with a resin case formed by integral molding, and the inside of the case is sealed with resin.

【0009】[0009]

【作用】[Action]

この考案は、上記したように電力用半導体チップおよび制御部品を搭載した回 路基板上を樹脂封止する際に、開口部を有する上蓋、側壁、内壁とともに上蓋開 口部下縁に突出部を一体成形により形成した樹脂ケースを用いることによって、 シリコンゴム層上にエポキシ樹脂層を形成するためのエポキシ樹脂を充填する際 に、開口部端縁ではエポキシ樹脂が突出部に当たって落下するので充填速度が和 らげられ、この結果上蓋下面に生ずる空気層を減ずることができ、従って空気層 とシリコンゴム層間のエポキシ樹脂層にヒビの入ることを防止することができる のである。 As described above, when the circuit board on which the power semiconductor chip and the control component are mounted is resin-sealed as described above, the protrusion is integrally formed on the lower edge of the opening of the upper lid, the side wall, and the inner wall. By using the resin case formed by molding, when filling the epoxy resin for forming the epoxy resin layer on the silicone rubber layer, the epoxy resin hits the protrusion at the edge of the opening and drops, so the filling speed is low. As a result, the air layer generated on the lower surface of the upper lid can be reduced, and thus cracks can be prevented from entering the epoxy resin layer between the air layer and the silicone rubber layer.

【0010】[0010]

【実施例】【Example】

以下、この考案の実施例を図1により詳細に説明する。尚、図中従来例と同じ 符号は同一部位を示すものである。図1において樹脂ケース11はケース上蓋1 1a、側壁11b、内壁11cが一体形成され、上蓋11aに開口部11dを有 するとともに、上蓋11aの開口部11d下縁に突出部16が同じく一体形成さ れている。このような構造の樹脂ケース11を、電力用半導体チップ4および制 御部品5を搭載し、外部引き出し端子を取り付け、回路間の結線7を行った回路 基板の金属基板1外縁に側壁11bを接着することによって取り付け、同時に内 壁11cの下端も金属基板1上に接着する。そして、内壁11c、11c内の電 力用半導体チップ4および制御部品5上にケース上蓋11aの開口部11dから シリコンゴムを充填し、加熱硬化させてシリコンゴム層12を形成する。 Hereinafter, an embodiment of the present invention will be described in detail with reference to FIG. In the figure, the same reference numerals as those of the conventional example indicate the same parts. In FIG. 1, a resin case 11 is integrally formed with a case upper lid 11a, a side wall 11b, and an inner wall 11c, has an opening 11d in the upper lid 11a, and a protrusion 16 is also integrally formed in the lower edge of the opening 11d of the upper lid 11a. Has been. The resin case 11 having such a structure is mounted with the power semiconductor chip 4 and the control component 5, external lead terminals are attached, and the wiring 7 between the circuits is connected. The side wall 11b is adhered to the outer edge of the metal substrate 1 of the circuit board. By doing so, the lower end of the inner wall 11c is also bonded onto the metal substrate 1 at the same time. Then, silicone rubber is filled on the power semiconductor chips 4 and the control component 5 in the inner walls 11c, 11c from the opening 11d of the case upper lid 11a and heat-cured to form the silicone rubber layer 12.

【0011】 次いで、形成したシリコンゴム層12の上に開口部11dからエポキシ樹脂を 充填し、加熱硬化させてエポキシ樹脂層13を形成することにより、この考案の 半導体モジュールが得られるのであるが、樹脂ケース11の上蓋11aの開口部 11d下縁に突出部16が形成されているために、開口部11dからエポキシ樹 脂を充填する際に、開口部11d端縁ではエポキシ樹脂が突出部16に当たって 落下するので充填速度が和らげられ、かつ開口部11dのエポキシ樹脂に力が加 わってもその力を突出部16で受け止めることができるので、この結果、上蓋下 面に生ずる空気層14を減ずることができ、たとえ空気層14とシリコンゴム層 12間のエポキシ樹脂層13が薄くてもエポキシ樹脂層にヒビが入ったり、割れ たりすることを防止することができるのである。従って、この半導体モジュール を機器類に取り付けるに際してもヒビ割れやエポキシ樹脂層の分離の恐れはない ので、耐湿特性が劣化したり、耐電圧の低下が生じることもない。Next, an epoxy resin is filled on the formed silicon rubber layer 12 through the opening 11d and heat-cured to form the epoxy resin layer 13. Thus, the semiconductor module of the present invention can be obtained. Since the protrusion 16 is formed on the lower edge of the opening 11d of the upper lid 11a of the resin case 11, when the epoxy resin is filled from the opening 11d, the epoxy resin hits the protrusion 16 at the edge of the opening 11d. Since it drops, the filling speed is moderated, and even if a force is applied to the epoxy resin in the opening 11d, the force can be received by the protruding portion 16, and as a result, the air layer 14 generated on the lower surface of the upper lid is reduced. Even if the epoxy resin layer 13 between the air layer 14 and the silicone rubber layer 12 is thin, the epoxy resin layer is cracked or cracked. Can be prevented. Therefore, when this semiconductor module is attached to equipment, there is no fear of cracking or separation of the epoxy resin layer, so that the moisture resistance characteristic does not deteriorate and the withstand voltage does not decrease.

【0012】 尚、この考案で用いる樹脂ケースにおいて、上蓋11aの開口部11d下縁に 形成する突出部16は、樹脂ケース成形に使用する金型の上蓋開口部下面に当た る部分をそのように形成しておくことによって、容易に一体成形で得ることがで きる。また、上記では電力用半導体チップと制御部品とを同一基板に有する回路 基板について説明してきたが、電力用半導体チップのみを有する回路基板にも適 用できることはいうまでもない。In the resin case used in the present invention, the protrusion 16 formed on the lower edge of the opening 11d of the upper lid 11a is a portion corresponding to the lower surface of the upper lid opening of the mold used for molding the resin case. It can be easily obtained by integral molding. Further, although the circuit board having the power semiconductor chip and the control component on the same substrate has been described above, it goes without saying that the present invention can also be applied to a circuit board having only the power semiconductor chip.

【0013】[0013]

【考案の効果】[Effect of device]

以上説明したように、この考案によれば電力用半導体チップおよび制御部品を 搭載し、外部引き出し端子を取り付け、回路間の結線を行った回路基板を樹脂ケ ースで囲んで樹脂封止するに際して、上蓋開口部の下縁に突出部を一体成形に設 けた樹脂ケースを用いることによって、封止エポキシ樹脂層におけるヒビ割れを 防ぎ、特性の劣化を防止できるのである。 As described above, according to the present invention, when the power semiconductor chip and the control component are mounted, the external lead terminals are attached, and the circuit board in which the circuits are connected is surrounded with the resin case and sealed with the resin. By using a resin case in which a protrusion is integrally formed on the lower edge of the upper lid opening, it is possible to prevent cracking in the sealing epoxy resin layer and prevent deterioration of characteristics.

【図面の簡単な説明】[Brief description of drawings]

【図1】この考案の半導体モジュールの断面図である。FIG. 1 is a sectional view of a semiconductor module of the present invention.

【図2】従来の半導体モジュールの断面図である。FIG. 2 is a sectional view of a conventional semiconductor module.

【図3】半導体モジュールを構成する回路基板の平面図
である。
FIG. 3 is a plan view of a circuit board that constitutes a semiconductor module.

【図4】従来の半導体モジュールの拡大部分断面図であ
る。
FIG. 4 is an enlarged partial sectional view of a conventional semiconductor module.

【符号の説明】[Explanation of symbols]

1 金属基板 2 銅回路 3 プリント配線板 4 電力用半導体チップ 5 制御部品 6 外部引き出し端子 11 樹脂ケース 11a 上蓋 11b 側壁 11c 内壁 11d 開口部 12 シリコンゴム層 13 エポキシ樹脂層 14 空気層 15 ヒビ割れ部 16 突出部 DESCRIPTION OF SYMBOLS 1 Metal board 2 Copper circuit 3 Printed wiring board 4 Power semiconductor chip 5 Control component 6 External extraction terminal 11 Resin case 11a Upper lid 11b Side wall 11c Inner wall 11d Opening 12 Silicon rubber layer 13 Epoxy resin layer 14 Air layer 15 Cracked part 16 Protrusion

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 【請求項1】 絶縁層を有する金属基板又は絶縁基板を
接着した金属基板の上に積層した銅回路上に電力用半導
体チップおよび制御部品を載置固定し、さらに一方端が
ケース上部外方に引き出される端子部材の他方端を上記
金属基板上に取り付けて得た回路基板を、上蓋と側壁お
よび内壁より構成され、上蓋に開口部を有し、かつ上蓋
の開口部下縁に突出部を一体成形にて形成した樹脂ケー
スで覆い、該ケース内を樹脂封止してなる半導体モジュ
ール。
1. A power semiconductor chip and a control component are mounted and fixed on a copper circuit laminated on a metal substrate having an insulating layer or a metal substrate to which an insulating substrate is adhered, and one end of the power semiconductor chip and the control component are located outside the top of the case. A circuit board obtained by mounting the other end of the drawn-out terminal member on the metal board is composed of an upper lid, a side wall, and an inner wall, has an opening in the upper lid, and integrally forms a protrusion at the lower edge of the opening of the upper lid. A semiconductor module which is covered with the resin case formed in 1. and the inside of the case is sealed with resin.
JP1992077516U 1992-10-12 1992-10-12 Semiconductor module Expired - Fee Related JP2539143Y2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1992077516U JP2539143Y2 (en) 1992-10-12 1992-10-12 Semiconductor module

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1992077516U JP2539143Y2 (en) 1992-10-12 1992-10-12 Semiconductor module

Publications (2)

Publication Number Publication Date
JPH0634256U true JPH0634256U (en) 1994-05-06
JP2539143Y2 JP2539143Y2 (en) 1997-06-25

Family

ID=13636136

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1992077516U Expired - Fee Related JP2539143Y2 (en) 1992-10-12 1992-10-12 Semiconductor module

Country Status (1)

Country Link
JP (1) JP2539143Y2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008093549A1 (en) * 2007-02-02 2008-08-07 Daikin, Industries, Ltd. Substrate module
US11887941B2 (en) 2020-10-01 2024-01-30 Fuji Electric Co., Ltd. Semiconductor module with reinforced sealing resin

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59138339A (en) * 1983-01-28 1984-08-08 Toshiba Corp Semiconductor device
JPH02298051A (en) * 1989-05-12 1990-12-10 Mitsubishi Electric Corp Semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59138339A (en) * 1983-01-28 1984-08-08 Toshiba Corp Semiconductor device
JPH02298051A (en) * 1989-05-12 1990-12-10 Mitsubishi Electric Corp Semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008093549A1 (en) * 2007-02-02 2008-08-07 Daikin, Industries, Ltd. Substrate module
US11887941B2 (en) 2020-10-01 2024-01-30 Fuji Electric Co., Ltd. Semiconductor module with reinforced sealing resin

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