JPH063405A - Measurement of semiconductor device contact - Google Patents

Abstract

PURPOSE:To measure the contacting state of a semiconductor device in shorter time by rapidly measuring numerous terminals at a single measurement. CONSTITUTION:A power source terminal and a GND terminal of a semiconductor device 1 are connected to a power source part 3 and a GND terminal 4, respectively, of an automatic examination system 2. The terminals to be measured of the semiconductor device 1 are connected to the load circuit of the automatic examination system 2 in parallel, and in addition, comparator circuits 15 and 16 far comparing voltage values at respective terminals being measured with each other are connected in series, for examining semiconductor devices.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a general-purpose LSI (IC) automatic inspection system (hereinafter referred to as a tester) and a semiconductor device contact measuring method for inspecting whether a semiconductor device is electrically connected.

[0002]

2. Description of the Related Art Conventionally, contact measurement of a semiconductor device (confirming electrical connection between a tester and an internal circuit of the semiconductor device) is conducted by using a tester.

FIG. 2 shows a contact of a conventional semiconductor device.
1 is a circuit diagram for a measuring method, 1 is a semiconductor device
Su, 2 is a tester, 3 is a power source of the tester 2, 4 is a test
2 of GND, 5 is a constant current source of tester 2, 6 is a test
It is the voltmeter of the target 2. For example, A of the semiconductor device 1
When measuring the terminals, the power supply terminal V of the semiconductor device 1
_DDPower supplied from the tester 2 to the semiconductor device 1
GND part V of the semiconductor device 1 by connecting the part 3_SSTe
Connect the GND (ground) 4 of the star 2 to a semiconductor device
Connect the constant current source 5 of the tester 2 to the A terminal of 1 in series,
It consists of a constant current source 5 and a voltmeter 6 connected in parallel.
Has been.

The operation will be described below. As shown in FIG. 3, an equivalent circuit inside the input and output terminals of the semiconductor device 1 is composed of a protection resistor 7 and protection diodes 8 and 9. 10 is the inside of the semiconductor device.

First, φ (V) is applied to the power supply section 3 supplied from the tester 2 to the semiconductor device 1, and a current is caused to flow from the constant current source 5 to the semiconductor device 1. Therefore, if the contact is normal, the protection resistor 7, the protection diode 8, the power supply unit 3 are passed from the constant current source 5 through the A terminal.
An electric current flows through the contact point G, and the voltage at the contact point G becomes almost the positive forward voltage (built-in voltage) of the PN junction. On the contrary, when a current is made to flow from the semiconductor device 1 to the constant current source 5, a current flows from the GND 4 to the constant current source 5 through the protection diode 9, the protection resistor 7 and the A terminal, and the voltage at the contact G is almost negative. Forward voltage. However, if the contact is abnormal (disconnected), the voltage at the contact G is infinite because the resistance seen from the constant current source 5 is infinite. Therefore, by measuring the voltage of the contact G, it is possible to determine whether the contact measurement is good or bad.

[0006]

However, in the above-mentioned conventional configuration, when the measuring instrument (constant current source, voltmeter) inside the tester has only one unit inside the tester,
Since it has to be connected to each terminal, there has been a problem that it takes time to measure a large number of terminals as the number of pins increases in recent years.

The present invention solves the above-mentioned conventional problems, and an object of the present invention is to provide a contact measuring method for a semiconductor device, which shortens the measurement time by measuring a large number of terminals at a high speed in one measurement. And

[0008]

In order to achieve this object, a semiconductor device contact measuring method according to the present invention comprises connecting a load circuit in parallel to each terminal to be measured and comparing the voltage values at the respective measuring terminals. The comparator circuit is connected in series and inspected.

[0009]

With this configuration, the load circuit and the comparator circuit inside the tester are equipped at each terminal respectively, and if the load by the software on the tester side or the load by the hardware is connected and the comparator relay is opened and closed, Many terminals can be measured at one time.

[0010]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings.

FIG. 1 shows a circuit diagram for a contact measuring method of a semiconductor device according to an embodiment of the present invention. In FIG. 1, the same parts as those in the conventional example of FIG. 2 are denoted by the same reference numerals, and the description of the numbers will be omitted.

For example, when measuring the A terminal of the semiconductor device 1 as in the conventional example, the power supply unit 3 supplied from the tester to the semiconductor device 1 is connected to the power supply terminal V _DD of the semiconductor device 1, and The GND4 of the tester is connected to the GND terminal V _SS . These are the same as the configuration of the conventional example, but the feature of the present invention is that the semiconductor device 1
A load resistor 12 and a power supply 13 are connected in series to the A terminal of the relay through the load circuit inside the tester 2, and a comparator 16 having a comparison voltage 15 is connected through the comparator relay 14. That is.

The operation of the contact measuring method for the semiconductor device of the present embodiment having the above-described structure will be described below.

First, in the semiconductor device 1 shown in FIG.
When (V) is applied, the relay 11 connecting the load circuit inside the tester 2 and the comparator relay 14 are turned on, and a positive voltage is applied from the power source 13, as shown in FIG. Since the terminal has the protective resistance 7 and the protective diodes 8 and 9 equivalently, if the contact is normal, the power supply 13 → the load resistance 12 → the A terminal → the protective resistance 7 → the protective diode 8 → the power supply section 3 Current flows through. Therefore, the potential of the contact point G becomes almost the positive forward voltage (built-in voltage) of the PN junction.

However, if the contact has an abnormality such as disconnection, the potential of the contact G becomes substantially the same as that of the power source 13.
Therefore, the comparator 16 can determine the quality by comparing the potential of the A terminal with the comparison voltage 15 of the comparator 16. On the contrary, if a negative voltage is applied from the power supply 13, a current flows through GND4 → protection diode 9 → protection resistance 7 → A terminal → load resistance 12 → power supply 13, and the protection diode on the opposite side can also be measured. (Usually, it is sufficient to measure only one of the protection diodes 8 and 9.).

As described above, according to this embodiment, the load circuit (power supply 13 and load resistance 12) inside the tester 2 and the comparator circuit (comparator 16 and comparison voltage 15) are included.
Since it is possible to simultaneously connect to each terminal of the semiconductor device 1 by using, it is possible to perform high-speed and large number of contact measurements in one test.

[0017]

Since the present invention has a configuration in which a load circuit is connected in parallel to each terminal to be measured and a comparator circuit is connected in series, an excellent semiconductor device contact measurement capable of measuring a large number of terminals at a high speed at a high speed is provided. A method can be provided.

[Brief description of drawings]

FIG. 1 is a circuit diagram showing a contact measuring method for a semiconductor device according to an embodiment of the present invention.

FIG. 2 is a circuit diagram showing a conventional contact measuring method for semiconductor devices.

FIG. 3 is an equivalent circuit diagram inside each terminal of a general semiconductor device.

[Explanation of symbols]

 1 Semiconductor Device 2 Tester (Automatic Inspection System) 3 Power Supply Section 4 GND (GND Terminal) 11 Load Circuit Relay 12 Load Resistance 13 Power Supply 14 Comparator Relay 15 Comparison Voltage 16 Comparator

Claims (1)

[Claims] 1. A power supply terminal and a GND terminal of a semiconductor device are respectively connected to a power supply section and a GND terminal of an automatic inspection system, and a load circuit of the automatic inspection system is connected in parallel to each measured terminal of the semiconductor device. A method for measuring contact of a semiconductor device, comprising connecting a comparator circuit for comparing voltage values of the terminals to be measured in series to inspect the semiconductor device.