JPH06291198A - Manufacturing for semiconductor device - Google Patents

Abstract

PURPOSE:To improve a production yield, by preventing a resist or an aluminum film from remaining at a corner of an edge along a scribing line. CONSTITUTION:In a method for manufacturing a semiconductor device, a surface of a semiconductor substrate 10 is coated with a resist in accordance with a given pattern and etched so that a plurality of pattern layers 11, 12, and 13 defined by scribing lines 14 are formed in multilayer. An aluminum film is formed thereon, and after a resist is applied, an electrode layer made of aluminum is formed by photolithographic etching. The scribing line 14 is formed in a step shape that becomes wider according as it goes upward.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a semiconductor device, wherein a plurality of pattern layers defined by scribe lines are formed on a semiconductor substrate in an overlapping manner at the time of manufacturing the semiconductor device. It is about.

[0002]

2. Description of the Related Art Conventionally, when manufacturing a semiconductor device, a pattern is formed on a surface of a semiconductor substrate such as a silicon wafer by etching or the like. This pattern formation is performed, for example, as shown in FIG. That is, in FIG. 2, the resist 2 is applied to the surface of the semiconductor substrate 1 excluding the portion to be etched first (see FIG. 2A).

From this state, after the semiconductor substrate 1 is etched to form scribe lines 1a having a predetermined pattern on the surface of the semiconductor substrate 1, the semiconductor substrate 1 is covered with the pattern layer 3 from above. Formed (Fig. 2
(See (B)).

Further, the semiconductor substrate 1 is etched by etching the region of the scribe line 1a.
The scribe line 3a is also formed on the pattern layer 3.

In this way, the scribe line 1a,
As shown in FIG. 3A, the semiconductor substrate 1 having the pattern layer 3 defined by 3a has an aluminum film 4 formed on the surface thereof. Then, the semiconductor substrate 1 is
As shown in FIG. 3B, a resist, for example, a positive resist 5 is applied on the aluminum film 4, and a portion except a region corresponding to a portion to be an aluminum electrode layer is removed by photolithography etching. It has become so.

[0006]

However, in the semiconductor substrate 1 thus configured, as shown in FIG. 2C, the scribe lines 1a and 3a have relatively large steps at their edges. When the resist 5 is applied after the aluminum film 4 is formed, the resist 5 flows down along the side edges of the scribe lines 1a and 3a, so that the scribes are formed as shown in FIG. 3 (B). The resist 5 accumulates in the corners at the lower ends of the side edges of the lines 1a and 3a, and the thickness of the resist 5 at the corners becomes relatively large.

As a result, when the resist 5 is exposed with the optimal exposure amount for the resist 5 for pattern formation, the resist 5 at the corners is left by the development.

Therefore, when the aluminum film 4 is etched with the resist 5 remaining in this corner, as shown in FIG.
As shown in (C), the aluminum film 4 below the resist 5 also remains.

In a later step, the remaining aluminum film 4 drops off from the surface of the semiconductor substrate 1 and adheres to the pattern formed on the semiconductor substrate 1, often causing a pattern short circuit. However, there is a problem that the yield of semiconductor devices is reduced.

In view of the above points, the present invention provides a method of manufacturing a semiconductor device in which a resist and an aluminum film are not left at the corners of the side edges of a scribe line to improve the yield. It is an object.

[0011]

According to the present invention, a scribe line is formed by applying a resist to a surface of a semiconductor substrate in accordance with a predetermined pattern shape and performing an etching process. A semiconductor device in which a plurality of pattern layers defined by are formed in an overlapping manner, an aluminum film is further formed thereon, a resist is applied, and then an electrode layer made of an aluminum film is formed by photolithography etching. In the method for manufacturing a semiconductor device described above, the scribe line is formed in a step shape so as to gradually widen upward.

[0012]

According to the above structure, since the scribe line is formed in a stepwise shape so as to widen upward,
Since the side edge of the scribe line has a relatively small step-like step, when the aluminum film is formed and the resist is applied thereon, the resist is along the side edge of the scribe line. There is no such thing as runoff and thickening.

As a result, the resist in the unnecessary portion can be removed by the optimum exposure amount for forming the pattern of the aluminum film, and the resist does not remain in the corners below the side edges of the scribe line.

Thus, the aluminum film does not remain in the corners below the side edges of the scribe line. Therefore, in the subsequent steps, a part of the aluminum film falls off and a short circuit of the pattern occurs. Therefore, the yield of semiconductor devices can be improved.

[0015]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described in detail below based on the embodiments shown in the drawings. FIG. 1 shows an embodiment of a semiconductor substrate manufactured by the method according to the present invention. In FIG. 1, the semiconductor substrate 10 has a pattern layer 11 having scribe lines 11a having a relatively wide width on its surface.
Are formed (see FIG. 1A).

Thereafter, the semiconductor substrate 10 has a second pattern layer 1 having a scribe line 12a which is narrower than the scribe line 11a from above the pattern layer 11.
2 is formed (see FIG. 1B).

Further, the semiconductor substrate 10 is
By forming the pattern layer 13 having the scribe line 13a having a narrower width, as shown in FIG. 1C, the scribe line 14 formed in a three-step staircase shape.
Will be formed.

The semiconductor device 10 according to the present invention is configured as described above, and the semiconductor substrate 10 having the plurality of pattern layers 11, 12, and 13 defined by the stepwise scribe line 14 is formed on the surface thereof. , An aluminum film is formed, and subsequently, a resist, for example, a positive resist 4 is applied thereon, and a portion except a region corresponding to a portion to be an aluminum electrode layer is removed by photolithography etching.

At this time, the scribe line 14 is formed in a step shape that widens upward. As a result, the side edges of the scribe line have step-like relatively small steps. Therefore, when the resist is applied, the resist does not flow down along the side edge of the scribe line and the thickness does not increase. Here, the resist of the unnecessary portion does not remain at the corner of the scribe line and can be reliably removed by the optimum exposure amount for forming the pattern of the aluminum film. Thus, in the corner of the scribe line,
The aluminum film does not remain.

[0020]

As described above, according to the present invention, an extremely excellent semiconductor device in which the resist and the aluminum film are not left at the corners of the side edges of the scribe line to improve the yield. The manufacturing method of can be provided.

[Brief description of drawings]

1A, 1B, and 1C are partially enlarged cross-sectional views showing a semiconductor device in which a scribe line is formed by the method of the present invention in the order of steps.

2A to 2C show a semiconductor device in which a scribe line is formed by a conventional method in the order of steps (A), (B), and (C).
FIG. 4 is a partially enlarged sectional view.

3 (A), (B) and (C) are partially enlarged cross-sectional views sequentially showing a step of forming an aluminum film having a predetermined pattern in the semiconductor device of FIG.

[Explanation of symbols]

 10 semiconductor substrate 11, 12, 13 pattern layer 14 scribe line

Claims (1)

[Claims] 1. A surface of a semiconductor substrate is coated with a resist corresponding to a predetermined pattern shape and subjected to an etching treatment to form a plurality of pattern layers defined by scribe lines in an overlapping manner. In the method for manufacturing a semiconductor device, an aluminum film is further formed thereon, a resist is applied, and then an electrode layer made of the aluminum film is formed by photolithography, wherein the scribe line is directed upward. A method of manufacturing a semiconductor device, characterized in that the semiconductor device is formed in a stepwise shape so as to gradually widen.