JPH06284360A - Television receiver - Google Patents

Abstract

PURPOSE:To make gradation display possible by providing a transmission type first liquid crystal display device and plural second liquid crystal devices whose transmissivity is different for functioning as a light shutter on the path of light from a light source. CONSTITUTION:The light emitted from the light source is distributed with equal intensity to three second devices 301 (liquid crystal devices provided with a pair of picture element electrodes) by an optical system 306 for dividing the light into three directions for which a half mirror is constituted in a cross. Mirrors 303 are provided so as to lead the light of the light source distributed by the optical system 306 to the right and left second device 301. ND filters 302 are neutral density filters and change the transmissivity of the light as roughly 2<0> to 2<1> to 2<2> to ...2<n> {(n) is an arbitrary number}. In this case, three ND filters 302 are provided and the gradation display is performed with three bits. Thus, by the ON and OFF of the second devices 301 and the combination of three kinds of the light intensity, 2<3>=8 levels of the gradation display can be performed.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention specifically relates to a video signal transmitted from a terrestrial television station, a satellite television station, a cable television station or a television image recording device (a video deck, a laser disc, a magneto-optical disc, etc.) provided individually. We propose a device to display.

[0002]

2. Description of the Related Art Conventionally, as a device for concretely displaying a video signal transmitted from a terrestrial television station, a satellite television station, a cable television station, or a television image recording device (a video deck, a laser disc, a magneto-optical disc, etc.) provided individually. Has adopted a method in which an electron beam is blown in a vacuum tube called a cathode ray tube or a CRT to cause a fluorescent surface as an object to emit light.

Initially, the diagonal of the display body was often 12 to 14 inches, but in recent years, the size of 20 inches, not to mention 30 inches, has come to appear due to the demand of the world.

When the diagonal is 30 inches, the depth is about 30 inches, and the thickness of the glass forming the glass exceeds 1 cm in order to maintain the strength. Further, as another device, a method of enlarging and displaying a high-luminance CRT with an optical system and projecting it on a screen has been proposed, and is used for an object having a large display area. The outline of the configuration is shown in FIG.

[0005]

In the case of a television receiver using a cathode ray tube, when the display surface exceeds 30 inches, the total weight is over 100 kg. In general households, it is difficult to place a heavy load exceeding 100 kg unless the place is limited. Moreover, when the layout is changed, it becomes difficult to move the weight manually, which hinders the spread of the weight to general households.

Therefore, a projection type television receiver has been proposed to solve the weight problem, but there is a limit to the improvement of the brightness of the original high brightness cathode ray tube, and the brightness itself on the enlarged screen is very low. Was becoming. Therefore, not only the screen is dark, but also the contrast ratio in the front is high because the image is magnified by the optical system, but the contrast ratio from the oblique direction is much inferior to that of the cathode ray tube method. However, in terms of weight, this method requires only about 50% of that of the cathode ray tube method, which is one of the solutions to the problem. The projection television shown in FIGS. 2A and 2B includes cathode ray tubes or liquid crystal display devices 80 and 81, a tuner 86, an optical system 85, a reflection plate 84, and a screen 83. The present invention relates to a liquid crystal display device indicated by reference numerals 80 and 81 in FIG. 2a.

[0007] In recent years, an example in which a thin film transistor type liquid crystal panel using amorphous silicon is used as a display body which is a base thereof instead of a cathode ray tube is often proposed. The weight is about 30% of that of the cathode ray tube method, which is one of the factors that help popularization in general households. However, the display brightness is still lower than that of the cathode ray tube method, and studies are under way to increase the intensity of the light source. However, when the intensity of the light source is increased, when the temperature of the liquid crystal panel rises and the thin film transistor is turned off due to light irradiation, The reality is that satisfactory display cannot be performed due to the decrease in the resistance value at.

There is also a display using a ferroelectric liquid crystal proposed by Clark Laguar Wall et al.
The conceptual diagram is shown in FIG. Ferroelectric liquid crystal has spontaneous polarization, so if the thickness of the liquid crystal layer is reduced until the helix is unwound, a stable interface state (SSFLC) will be created, and once an electric field is applied, it will be transmitted even if the electric field is removed. Alternatively, it was possible to obtain a memory effect in which the non-transparent state continued. By using this memory state, TFT
It is possible to drive statically like the active matrix LCD of the above.

However, in the case of a ferroelectric liquid crystal, transmission,
Since it has only two non-transparent stable states, it has been difficult to display gradations accompanying the diversification of information. In particular, when these liquid crystal electro-optical devices are used for image purposes, gradation display is indispensable. As a method for solving this, gradation is displayed by dividing a unit pixel into a plurality of areas and forming a plurality of dots.
For example, it has been devised to divide a unit pixel into an area ratio of 1: 2: 4 and obtain 8 gradations by combining these ON / OFF. FIGS. 3a and 3b show an electrode structure for 2-gradation display and an electrode structure for 8-gradation display.

However, since three data signals must be added to each unit pixel, the external circuit becomes very complicated, resulting in an increase in cost and a reduction in yield when connecting the external circuit. It was Furthermore, since an insulation section is provided between the electrodes for division, the aperture ratio is reduced. For example, 250 μm
When considering a unit pixel with a pitch of 25 μm gap, it can be seen that the aperture ratio without division is 81%, whereas when division is performed with the same gap, it is reduced to 63%. Furthermore, the width of the thinnest electrode (103) for division is 25 in the case of the pitch and gap.
It becomes μm. 1000 × 1 as a liquid crystal display device
Even if a 000 pixel device is manufactured using ITO having a sheet resistance of 5Ω or less, the electrodes in the data direction have a resistance of about 50 kΩ from one end to the other. In this case, the electric field strength applied to the liquid crystal at both ends of the electrode is different, and uniform display cannot be performed, which is unrealistic. Therefore, there has been a demand for more realistic means for controlling the gradation.

[0011]

According to the present invention, gradation display is made possible by changing the light source intensity for illumination with time rather than causing the matrix liquid crystal device for display to perform gradation display. It is a thing. As an example of the present invention, FIG. 1 shows a configuration of an image forming portion of a television receiver. In the present invention, as means for enabling gradation display, a liquid crystal device 301 having a set of pixel electrodes in addition to the conventional transmissive liquid crystal display device 304 which is the first device as shown in FIG.
And an ND filter 302. The ND filter is an abbreviation for neutral density filter, and is an optical filter whose transmittance can be freely set. It goes without saying that other filters may be used as long as they can set the transmittance arbitrarily.

Further, the present invention is characterized in that the light transmittance of the ND filter is approximately 2 ⁰ : 2 ^{1 1} : 2 ² pairs, ..., 2 ⁿ (n is an arbitrary number). . In this specification, in order to simplify the description, the description is added using the light intensity of 3 bits.

An apparatus for carrying out gradation display using the light intensity of 3 bits shown in FIG. 1 will be described below with the configuration of the present invention.
The television receiver of FIG. 1, which is one example of the present invention, exhibits ferroelectricity by a first substrate having electrodes and leads on the substrate and a second substrate having electrodes and leads on the substrate. A first device 303 having a liquid crystal composition and a means for orienting the liquid crystal composition at least initially, and a first substrate having electrodes and leads on the substrate for performing gradation display, and a substrate Provided are three second devices composed of a plurality of liquid crystal compositions having ferroelectricity and means for orienting the liquid crystal compositions at least initially, which are sandwiched by a second substrate having electrodes and leads thereon. It is an attempt to make one screen that is actually displayed on the screen by combining three screens.

In FIG. 1, the light emitted from the light source is distributed to the three second devices 301 with equal intensity by the optical system 306 that divides the light with the half mirror crossed into three directions. Has become. Where 303
Is a mirror and is provided so as to guide the light of the light source distributed by 306 to the left and right second devices in FIG. Three
02 is a schematic 2 the transmittance of light be a ND filter ^{0-2
, 2} pairs, ..., ²ⁿ (n is an arbitrary number). In the case of the device shown in FIG. 1, since three ND filters are provided, three kinds of light intensities can be used, and therefore gradation display is performed with 3 bits.
Therefore, in this case (in the case of the device of FIG. 1), the second device 30
2 depending on the combination of 1 ON / OFF and 3 types of light intensity
³ = 8 gradation display can be performed.
That is, the present invention is characterized in that the gradation display is controlled by the second device.

[0015] If the second device and the ND filter 5 provided, in order to display the instantaneous image with recognized by one of the screen i.e. actually human by successive five screens, schematic 2 ⁰ pairs By providing an ND filter capable of changing arbitrary transmittance as 2 ¹ to 2 ² pairs, ..., 2 ⁿ (n is an arbitrary number) in the same manner as in the case of FIG. By using, it is possible to perform gradation display of 2 ⁵ = 32 steps. The reason why the transmittance is set as described above is that a binary code is used for ON / OFF, that is, for gradation display in binary. As the first device (304 in FIG. 1) in the device shown in FIG.
An example of a method of gradation display in the case of using a liquid crystal electro-optical device having a matrix of 2 × 2 pixels as shown in FIG.

FIG. 5 shows a display example of a screen having 2 × 2 pixels recognized as a result. In FIG. 5, the levels in the 8 gradations are changed from dark to bright, and G0, G1, G2.
..When G7 is set, the level of the A1 pixel 101 is G0,
A case where the level of the A2 pixel 102 is displayed as G3, the level of the B1 pixel 103 is displayed as G5, and the level of the B2 pixel 104 is displayed as G7 is shown.

The method of displaying as shown in FIG. 5 will be described below. In this case, since the three second devices shown in FIG. 1 are provided, one screen actually perceived by us is synthesized by three continuous screens each having different light intensity.

When performing the display shown in FIG. 5 in Table 1 below, each pixel of the first liquid crystal electro-optical device is turned on and off, and the transmitted light intensity ratio of the second liquid crystal electro-optical device, that is, the ratio of the transmittances. Show the relationship.

[0019]

[Table 1]

First, in the first screen, the light intensity is set to 1 due to the change in the transmittance of the second device, and the pixels on the first device are turned off (A1 pixel is not transmitted) and A2 is turned off.
The pixel is in an ON state (light transmission), the B1 pixel is in an ON state (light transmission), and the B2 pixel is in an ON state (light transmission).

On the second screen, the light intensity is set to 2 by selecting the transmittance of the second device, and the pixels on the first device are turned off (A1 pixel is not transmitted) and A2 pixels are not transmitted. Is ON (light transmission), the B1 pixel is OFF (light non-transmission), and the B2 pixel is ON (light transmission).

On the third screen, the light intensity is set to 4 by selecting the transmittance of the second device, and the pixels on the first device are turned off (A1 pixel is not transmitted) and A2 pixel is Is OFF (non-transmission of light), the B1 pixel is ON (light transmission), and the B2 pixel is ON (light transmission).

By performing the operations shown in Table 1 above, it is possible to perform gradation display as shown in FIG. 5 in a 2 × 2 matrix. By operating the first device and the second device in this way, it is possible to display up to 8 gradations in one set of 3 screens. Also, in this description, 3
Although it is substituted in the description using bits (n = 3), it goes without saying that n shown in the claims is an arbitrary number and may be another value. In addition, as the first device 304, RGB3
By using a color display device having a color filter, a color display device capable of gradation display can be obtained.

In the present invention, the second device may be a simple light transmission type liquid crystal device having a single pixel, and more specifically, it may be a kind of optical shutter. The first device may be a display device other than the liquid crystal electro-optical device as long as it is a display device capable of displaying light by transmitting light and projecting the light transmitted through the device onto a screen. Good.

Further, in order to further simplify the structure, a device of the liquid crystal electro-optical device 303 of the reflection type is provided together with an ND filter at the reflection mirror 303 of FIG. 1, and a second device having a different reflectance can be selected. It is possible to obtain the same effect as when the configuration of the present invention is adopted. Examples in which the constitution of the present invention is constituted by using various liquid crystal electro-optical devices will be shown below.

【Example】

Example 1 In this example, an active matrix liquid crystal device using a thin film transistor was used as the first device. First, the manufacturing procedure will be described. In this embodiment, a liquid crystal display device using a ferroelectric liquid crystal (FLC) will be described using a liquid crystal display device having a circuit configuration as shown in FIG. 6, that is, an inverter type configuration. FIG. 7 shows an actual arrangement configuration of electrodes and the like corresponding to this circuit configuration. These are 2x2 to simplify the explanation
Only the part corresponding to is described. Further, the actual drive signal waveform is shown in FIG. This is also 4 to simplify the explanation
The signal waveforms in the case of the × 4 matrix configuration will be described.

First, a method of manufacturing the liquid crystal display device used in this embodiment will be described with reference to FIG. FIG. 9 (A)
In the above, a silicon oxide film as a blocking layer 51 having a thickness of 1000 to 3000 Å is formed on a glass 50, such as quartz glass, which can withstand a heat treatment of 700 ° C. or less, for example, about 600 ° C. To make. Process conditions are 100% oxygen atmosphere,
Deposition temperature 15 ° C, output 400-800W, pressure 0.5P
a. Quartz or single crystal silicon was used for the target, and the film formation rate was 30 to 100Å / min.

A silicon film was formed thereon by LPCVD (Low Pressure Vapor Phase) method, sputtering method or plasma CVD method. When forming by the reduced pressure vapor phase method, it is 1
450-550 ° C, which is low by 00-200 ° C, for example, 530 ° C
CVD of disilane (Si ₂ H ₆ ) or trisilane (Si ₃ H ₈ )
The film was supplied to the apparatus to form a film. The reactor pressure is 30-300
It was Pa. The film forming rate was 50 to 250 Å / min.
Threshold voltage (Vt) between NTFT and PTFT
In order to control the concentration to be substantially the same as that of h), boron may be added during the film formation with diborane at a concentration of 1 × 10 ¹⁵ to 1 × 10 ¹⁸ cm ⁻³ .

When the sputtering method is used, the back pressure before the sputtering is set to 1 × 10 ^-5 Pa or less, the single crystal silicon is used as the target, and the atmosphere is mixed with hydrogen of 20 to 80% in argon. For example, argon is 20% and hydrogen is 80%.
The film forming temperature was 150 ° C., the frequency was 13.56 MHz, the sputter output was 400 to 800 W, and the pressure was 0.5 Pa.

When the silicon film is formed by the plasma CVD method, the temperature is, for example, 300 ° C., and monosilane (SiH ₄ ) or disilane (Si ₂ H ₆ ) is used. These were introduced into a PCVD apparatus, and high-frequency power of 13.56 MHz was applied to form a film.

The coatings formed by these methods are
It is preferable that oxygen is 5 × 10 ²¹ cm ⁻³ or less. If this oxygen concentration is high, it is difficult to crystallize and the thermal annealing temperature must be high or the thermal annealing time must be long.
If it is too small, the backlight will turn off the light.
The current will increase. Therefore 4 × 10 ¹⁹ to 4 × 10 ²¹
The range was cm ^-3 . Hydrogen is 4 × 10 ²⁰ cm ^-3 and silicon 4
When compared with ^{x10 22} cm ^-3 , it was 1 atom%. Also,
In order to further promote crystallization of the source and drain, the oxygen concentration is 7 × 10 ¹⁹ cm ^-3 or less, preferably 1 × 10 ¹⁹
cm ^-3 or less, so that the oxygen is 5 × 10 ^{20 to} 5 × 10 ²¹ cm ^-3 by the ion implantation method only in the channel forming region of the TFT which constitutes the pixel (region surrounded by the broken line 23 in FIG. 7). You may add. At that time, since the TFTs constituting the peripheral circuit are not irradiated with light, it is possible to reduce the mixing of oxygen and to have a higher carrier mobility.
It is effective for high frequency operation.

Next, a silicon film in an amorphous state is formed into 500
~ 5,000 Å, for example, 1500 Å after making, 4
Medium temperature heat treatment in a non-oxide atmosphere at a temperature of 50 to 700 ° C. for 12 to 70 hours, for example, 600 in a hydrogen atmosphere.
Hold at a temperature of ° C. Since the amorphous silicon oxide film is formed on the surface of the substrate below the silicon film, no specific nuclei are present in this heat treatment, and the whole is uniformly annealed. That is, it has an amorphous structure at the time of film formation, and hydrogen is simply mixed therein.

The annealing causes the silicon film to shift from an amorphous structure to a highly ordered state, and a part thereof exhibits a crystalline state. In particular, a region having a relatively high degree of ordering after the film formation of silicon tends to be crystallized and become a crystalline state. However, since silicon existing between these regions is bonded to each other, the silicon members pull each other. Peak 522 of single crystal silicon as measured by laser Raman spectroscopy
Peaks shifted to lower frequencies than cm ^-1 are observed. The apparent particle size is 50 to 5 when calculated from the full width at half maximum.
Although it is a microcrystal like 00Å, in reality there are many highly crystalline regions with a cluster structure, and each cluster has a semi-amorphous structure in which silicon is bonded (anchoring) with each other. Could be formed.

As a result, the coating is in a state in which it may be said that it is substantially free of grain boundaries (hereinafter referred to as GB). Since the carriers can easily move between the clusters through the anchored portions, the carrier mobility is higher than that of polycrystalline silicon in which so-called GB is clearly present. That is, hole mobility (μh) = 10 to ²⁰⁰ cm ² /
VSec, electron mobility (μe) = 15 to 300 cm ² / V
Sec is obtained.

On the other hand, when the film is polycrystallized by a high temperature anneal of 900 to 1200 ° C. instead of the anneal at a medium temperature as described above, segregation of impurities in the film occurs due to solid phase growth from nuclei. , GB have a large amount of impurities such as oxygen, carbon, and nitrogen, and have a large mobility in the crystal, but they form a barrier in GB and hinder the movement of carriers there. As a result, it is difficult to obtain a mobility of 10 cm ² / Vsec or more. That is, in this embodiment, the silicon semiconductor having the semi-amorphous or semi-crystal structure is used for the reason as described above.

On this, a silicon oxide film was formed as a gate insulating film to a thickness of 500 to 2000Å, for example, 1000Å. This was performed under the same conditions as the production of the silicon oxide film as the blocking layer. During this film formation, a small amount of fluorine may be added to immobilize sodium ions.

After this, 1-5 × 10 ²¹ cm of phosphorus is placed on the upper side.
^-3 concentration silicon film or this silicon film with molybdenum (Mo), tungsten (W), MoSi ₂ or
A multilayer film with WSi ₂ was formed. The multilayer film may be an alloy containing aluminum.

This was patterned with a second photomask to obtain FIG. 9 (B). Gate electrode 9 for PTFT,
A gate electrode 19 for NTFT was formed. For example, the channel length is 10 μm, and the gate electrode is made of phosphorus-doped silicon.
2 μm, and molybdenum was formed thereon to a thickness of 0.3 μm. In FIG. 9C, a photoresist 57 is formed using a photomask, and a source 1 for PTFT is formed.
0 to the drain 12, boron 1 to 5 × 10 ¹⁵ cm ^-2
Was added by ion implantation using the gate electrode as a mask. Next, as shown in FIG. 9D, an NTFT was formed using a photomask. A source 20 for the NTFT and phosphorus as a drain 18 were added by an ion implantation method at a dose amount of 1 to 5 × 10 ¹⁵ cm ^-2 .

These are performed through the gate insulating film 54. However, in FIG. 9B, the gate electrodes 55 and 56 are
The silicon oxide on the silicon film may be removed by using as a mask, and then boron and phosphorus may be directly ion-implanted into the silicon film.

Next, heating anneal was performed again at 600 ° C. for 10 to 50 hours. The source 10 and drain 12 of the PTFT, the source 20 and the drain 18 of the NTFT were produced as P ⁺ and N ⁺ by activating impurities. Channel forming regions 21 and 11 are formed below the gate electrodes 9 and 19 as semi-amorphous semiconductors.

In this way, the C / TFT can be manufactured without applying a temperature above 700 ° C. in all steps, even though it is a self-aligned method. Therefore, it is not necessary to use an expensive substrate such as quartz as the substrate material, and the process is very suitable for the large-pixel liquid crystal display device of the present invention.

In this embodiment, the thermal anneal is shown in FIG.
Done twice in (D). However, the anneal of FIG. 9 (A) may be omitted depending on the desired characteristics, and both may be combined with the anneal of FIG. 9 (D) to reduce the manufacturing time. In FIG. 9E, the interlayer insulator 65 was formed as a silicon oxide film by the above-described sputtering method. The silicon oxide film may be formed by using the LPCVD method, the photo CVD method, or the atmospheric pressure CVD method. For example, it is formed to have a thickness of 0.2 to 0.6 μm, and then a window 66 for an electrode is formed using a photomask. Further, aluminum is formed on all of them by a sputtering method to form leads 71, 72 and contacts 67,
After forming 68 using a photomask, an organic resin 69 for flattening the surface, for example, a translucent polyimide resin was applied and formed, and electrode holes were formed again using the photomask.

As shown in FIG. 9 (F), two TFTs have a complementary structure, and the output terminal thereof is connected to the electrode of one pixel of the liquid crystal device as a transparent electrode. Therefore, ITO (indium) is formed by a sputtering method. -Tin oxide film) was formed. It was etched with a photomask to form the pixel electrode 17. This ITO was formed into a film at room temperature to 150 ° C. and accomplished by oxygen at 200 to 400 ° C. or an anneal in the atmosphere.

In this way, the PTFT 22 and the NTFT are
13 and the transparent conductive film electrode 70 that is a pixel electrode were formed on the same glass substrate 50. The characteristics of the obtained TFT are P
The TFT has a mobility of 20 (cm ² / Vs) and a Vth of -5.9.
At (V), the mobility was 40 (cm ² / Vs) in NTFT and Vth was 5.0 (V).

It goes without saying that the above manufacturing method is exactly the same regardless of whether it is a buffer type or an inverter type. A first substrate was obtained by manufacturing according to the method as described above. Although the present embodiment is of the inverter type, the difference between the buffer type and the inverter type is the configuration thereof, that is, the NTFT and the PTFT.
The positions of are only opposite to each other.

The inverter circuit shown in FIG. 6 which is the circuit configuration of this embodiment will be described. This circuit is for driving the pixel 17 for applying an electric field to the liquid crystal 14,
It is composed of PTFT 13 and NTFT 22. FIG. 7 is an actual pattern diagram of this 2 × 2 matrix circuit. Reference numerals 3 and 4 in FIG. 6 correspond to Y ₁ Y ₂ in FIG. 7, and reference numerals 5 and 8 correspond to X _1a and X _1b . An example of signals applied to each signal line to drive this circuit is shown in FIG. Each pixel AA, AB, BA, BB in FIG. 8 corresponds to the pixel whose reference numeral is shown in FIG.

On the other hand, as the substrate, a transparent electrode is provided on almost the entire surface of the substrate, and a polyimide solution diluted with NMP (N-methyl-2pyrrolidone) is printed on the transparent electrode by an offset method. After baking for 1 hour in nitrogen at 280 ° C., rubbing was performed to obtain a second substrate as a means for initial alignment of the liquid crystal composition.

Between the first substrate and the second substrate, a liquid crystal composition having ferroelectricity and 2.5 μm made of silicon oxide.
Particles having a diameter were dispersed at a ratio of 200 particles per mm ² and sandwiched, and the periphery was fixed with an epoxy resin to prepare a first device.

Next, a description of the second device will be added.

A first substrate having one electrode and a lead on the substrate, a transparent electrode provided on almost the entire surface of the substrate, and a polyimide solution diluted with NMP (N-methyl-2pyrrolidone) on the transparent electrode by an offset method. A liquid crystal composition exhibiting a ferroelectricity is obtained by printing, and then calcination at 50 ° C. and calcination in nitrogen at 280 ° C. for 1 hour, and then rubbing to obtain a second substrate that is used as a means for initial alignment of the liquid crystal composition. 1 m of particles having a diameter of 2.5 μm and made of silicon oxide
200 pieces per m ² were dispersed and sandwiched, and the periphery was fixed with an epoxy resin. On the outside of this, N of the light transmittance ratio of 1, 0.5, and 0.25.
Install the D filters closely or in the optical path,
A second device was made.

Here, the transmittance of the ND filter was set as necessary. As described above, FIG.
As shown in FIG. 1, the first device (80) and the second device (8
1), light source (82), screen (83), mirror (8)
4), the optical system (85) and the tuner (86) were installed to obtain a television receiver.

Next, a description will be added regarding the driving of this apparatus.

The pixel structure of the first device manufactured in this example has 640 horizontal × 480 vertical pixels and has 48 scanning directions.
A signal for writing is applied to 0 leads for 23.15 μsec. Therefore, one screen has 11.11 ms, and one set of three screens has 33.33 ms.

Of the three second devices, one having an ND filter with a light transmittance ratio of 0.25 installed in the first period is turned on to set the transmitted light intensity to 1 at the maximum. / 4. In the second period, an ND filter having a light transmittance ratio of 0.50 was set to ON, and the transmitted light intensity was set to 2/4 of the maximum. In the third period, an ND filter having a light transmittance ratio of 1.00 was turned on to maximize the transmitted light intensity.

Thus, by turning on or off the lights of three kinds of intensities respectively, in the first device, gradation display of 2 ³ = 8 steps is possible. In addition, similarly, a set of four second devices is also confirmed, and gradation display of 16 steps is also confirmed.

[Embodiment 2] In this embodiment, a display device using a simple matrix is the first device.

First, 100% of the surface is sputtered.
ITO was formed on a 1.1 mm thick soda lime glass substrate on which a 0Å silicon oxide film was formed by DC sputtering.
(Indium tin oxide) was formed at 1100Å. After that, 640 parallel electrodes and leads were formed by a photolithography method to obtain a first substrate. Further, a 1000 Å silicon oxide film was formed on the surface by a sputtering method 1.1
1100Å ITO (Indium Tin Oxide) is deposited on a soda lime glass substrate with a thickness of mm by DC sputtering.
Formed. After that step, 480 using photolithography
After forming parallel electrodes and leads of the book, a polyimide solution diluted with NMP (N-methyl-2pyrrolidone) was printed by the offset method, and then pre-baked at 50 ° C., baked at 280 ° C. for 1 hour, and then rubbed. The second substrate was used as a means for initial alignment of the liquid crystal composition.

The first substrate and the second substrate are made of a liquid crystal composition exhibiting ferroelectricity and 2.5 μm of silicon oxide.
Particles having a diameter were dispersed at a ratio of 200 particles per mm ² and sandwiched, and the periphery was fixed with an epoxy resin to prepare a first device.

As the second device, the same device as in Example 1 was used.

Next, a description will be added regarding the driving of this apparatus.

The pixel structure of the first device manufactured in this example has 640 horizontal × 480 vertical pixels and has 48 scanning directions.
A signal for writing is applied to 0 leads for 34.72 μsec. FIG. 11 shows the drive waveform. Also,
One screen has 16.67 msec, and two screens have a set of 3
It is 3.33 ms.

Therefore, in this embodiment, the second device is a set of two liquid crystal optical devices. Of the two second devices, the one with an ND filter having a light transmittance ratio of 0.50 installed in the first period is turned on to set the transmitted light intensity to 1/2 of the maximum. did. In the second period, an ND filter having a light transmittance ratio of 1.00 was turned on to maximize the transmitted light intensity.

As a result, gradation display of 2 ² = 4 steps is possible.

Also in Examples 1 and 2, liquid crystal display devices were produced by using a liquid crystal device in which nematic liquid crystal was dispersed in a network of photocurable modified acrylic resin as the second device. It was possible to obtain a gradation display.

[0065]

As described above, according to the structure of the present invention, as compared with the conventional television receiver using the cathode ray tube,
The weight can be reduced by about 70%. By using the present invention, gradation display, which has been difficult with a conventional liquid crystal display device using a ferroelectric liquid crystal, has become possible. As a result, it is expected that the amount of information will increase, and a wide range of specifications will be possible even for a television receiver.

[Brief description of drawings]

FIG. 1 shows a structural diagram of an image producing portion of a television receiver according to the present invention.

FIG. 2 is a structural diagram of a conventional projection television.

FIG. 3 shows the basic concept of a ferroelectric liquid crystal.

FIG. 4 shows a gradation display according to a pixel area.

FIG. 5 is a diagram for explaining gradation display of the present invention.

FIG. 6 shows a circuit diagram of this embodiment.

FIG. 7 shows a basic structural diagram of the present embodiment.

FIG. 8 shows a drive signal of this embodiment.

FIG. 9 shows a manufacturing process of this example.

[Explanation of symbols]

 306 ... Optical system 303 ... Mirror 301 ... Second device 302 ... ND filter 305 ... Optical system 304 ... First device

[Procedure amendment]

[Submission date] December 26, 1991

[Procedure Amendment 1]

[Document name to be corrected] Drawing

[Name of item to be corrected] Figure 6

[Correction method] Change

[Correction content]

[Figure 6]

[Procedure Amendment 2]

[Document name to be corrected] Drawing

[Name of item to be corrected] Figure 7

[Correction method] Change

[Correction content]

[Figure 7]

[Procedure amendment]

[Submission date] February 7, 1994

[Procedure Amendment 1]

[Document name to be corrected] Drawing

[Correction target item name] All drawings

[Correction method] Change

[Correction content]

[Figure 1]

[Fig. 2]

[Figure 3]

[Figure 4]

[Figure 5]

[Figure 6]

[Figure 7]

[Figure 8]

[Figure 9]

Claims (8)

[Claims] 1. A liquid crystal composition having ferroelectricity and at least an initial stage of the liquid crystal composition, comprising a first substrate having electrodes and leads on the substrate and a second substrate having electrodes and leads on the substrate. A liquid crystal composition exhibiting ferroelectricity by a first device sandwiching a means for orienting the substrate, a first substrate having electrodes and leads on the substrate, and a second substrate having electrodes and leads on the substrate. A television receiver, characterized in that a second device comprising a plurality of objects and a means for orienting the liquid crystal composition at least initially is provided on the optical path between the light source and the screen for outputting an image. 2. A second device At a first aspect, each made of a pair of pixel electrodes and the ND filter, the transmittance of light is schematically 2 ^{0-2 1:} 2 ² pairs of said ND filter,・ ・ 、
A television receiver characterized in that it is pair 2 ⁿ (n is an arbitrary number). 3. A liquid crystal device having a matrix structure on a substrate, wherein each pixel is provided with a P-channel type thin film transistor and an N-channel type thin film transistor with a complementary structure, and the output of the complementary transistor is provided to the pixel. A first substrate having a connected structure and a second substrate having electrodes and leads on the substrate sandwich a liquid crystal composition exhibiting ferroelectricity and a means for orienting the liquid crystal composition at least in the initial stage. The first device to
By the first substrate having electrodes and leads on the substrate and the second substrate having electrodes and leads on the substrate,
A second device comprising a plurality of liquid crystal compositions having ferroelectricity and means for orienting the liquid crystal composition at least initially is provided on an optical path between a light source and a screen for outputting an image. And a TV receiver. 4. A second device At a third aspect, each made of a pair of pixel electrodes and the ND filter, the transmittance of light is schematically 2 ^{0-2 1:} 2 ² pairs of said ND filter,・ ・ 、
A television receiver characterized in that it is pair 2 ⁿ (n is an arbitrary number). 5. A signal line having a matrix structure and an N-channel thin film transistor are provided on each pixel electrode on a substrate, one of the input and output sides of the thin film transistor is the pixel electrode, and the other is the matrix structure. A first substrate having an electric circuit connected to a first signal line of a pair of signal lines, and a gate of the thin film transistor connected to a second signal line of the signal line having the matrix structure; and an electrode on the substrate. And a second substrate having a lead, a first device sandwiching the ferroelectric liquid crystal composition and a means for orienting the liquid crystal composition at least in the initial stage, and a first device having an electrode and a lead on the substrate. At least a liquid crystal composition having ferroelectricity and the liquid crystal composition are provided by one substrate and a second substrate having electrodes and leads on the substrate. A second device having the plurality of clamping and means for orienting the period, the television receiver, characterized in that provided on the optical path between the screen for outputting the light source and the image. 6. The second device according to claim 5, each comprising a pair of pixel electrodes and an ND filter, and the light transmittance of the ND filter is approximately 2 ⁰ : 2 ¹ : 2 ² pairs,・ ・ 、
A television receiver characterized in that it is pair 2 ⁿ (n is an arbitrary number). 7. A liquid crystal device having a matrix structure on a substrate, wherein a wiring connected to each pixel is provided with an electrically non-linear element, and an output of the electrically non-linear element is connected to the pixel. A first device, which sandwiches a liquid crystal composition exhibiting ferroelectricity and a means for orienting the liquid crystal composition at least in an initial stage, by one substrate and a second substrate having electrodes and leads on the substrate, A first substrate having electrodes and leads on the substrate, and a second substrate having electrodes and leads on the substrate, and a liquid crystal composition exhibiting ferroelectricity, and means for orienting the liquid crystal composition at least in the initial stage. A television receiver characterized in that a second device composed of a plurality of devices for sandwiching is provided on an optical path between a light source and a screen for outputting an image. 8. The second device according to claim 7, each comprising a pair of pixel electrodes and an ND filter, and the light transmittance of the ND filter is approximately 2 ⁰ : 2 ¹ : 2 ² pairs,・ ・ 、
A television receiver characterized in that it is pair 2 ⁿ (n is an arbitrary number).