JPH06283536A - Solder bump packaging substrate - Google Patents
Solder bump packaging substrateInfo
- Publication number
- JPH06283536A JPH06283536A JP5071394A JP7139493A JPH06283536A JP H06283536 A JPH06283536 A JP H06283536A JP 5071394 A JP5071394 A JP 5071394A JP 7139493 A JP7139493 A JP 7139493A JP H06283536 A JPH06283536 A JP H06283536A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- solder bump
- metal
- bonding pad
- bonding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/11—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
- H01L2224/113—Manufacturing methods by local deposition of the material of the bump connector
- H01L2224/1133—Manufacturing methods by local deposition of the material of the bump connector in solid form
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
- H01L2224/113—Manufacturing methods by local deposition of the material of the bump connector
- H01L2224/1133—Manufacturing methods by local deposition of the material of the bump connector in solid form
- H01L2224/11334—Manufacturing methods by local deposition of the material of the bump connector in solid form using preformed bumps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
- H01L2224/118—Post-treatment of the bump connector
- H01L2224/11848—Thermal treatments, e.g. annealing, controlled cooling
- H01L2224/11849—Reflowing
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/3457—Solder materials or compositions; Methods of application thereof
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
- Manufacturing Of Printed Wiring (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、光素子あるいは電気素
子を搭載するための半田バンプを設けた半田バンプ実装
基板に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a solder bump mounting substrate provided with solder bumps for mounting optical elements or electric elements.
【０００２】[0002]
【従来の技術】光通信は光ファイバ、半導体レーザ（Ｌ
Ｄ），発光ダイオード（ＬＥＤ）、フォトダイオード
（ＰＤ）を始めとして、光スイッチ、光変調器、アイソ
レータ、光導波路等の受動、能動素子の高性能、高機能
化により応用範囲が拡大されつつある。近年、より多く
の情報を伝達する要求が高まる中で、コンピュータ端末
間、交換器や大型コンピュータ間のデータ伝送を実時間
が並列に行う並列伝送、あるいは一般家庭への高度情報
サービス等、加入者系への光通信の適用が考えられてい
る。この光加入者系の場合、光素子はもとより光素子を
機能的に構成した光モジュールの低価格が不可欠とされ
ている。電子機器においても、機器の軽薄短小化の要求
が年々高まり、コスト低減が求められている。光モジュ
ールや電子機器の低価格化の有効な手段として、素子を
バンプを介して無調整で基板上に実装するフリップチッ
プ実装（ＦＣＢ）が注目されている。2. Description of the Related Art Optical communication uses optical fibers and semiconductor lasers (L
D), light emitting diodes (LEDs), photodiodes (PDs), optical switches, optical modulators, isolators, optical waveguides, and other passive and active devices have been expanding their application range due to high performance and high functionality. . In recent years, with the increasing demand for transmitting more information, subscribers are required to perform parallel data transmission between computer terminals, exchanges or large-scale computers in real time in parallel, or advanced information services for general households. The application of optical communication to a system is considered. In the case of this optical subscriber system, it is indispensable that not only the optical element but also the optical module that functionally configures the optical element be low in price. In electronic devices as well, the demand for lighter, thinner, smaller devices is increasing year by year, and cost reduction is required. As an effective means for lowering the cost of optical modules and electronic devices, flip-chip mounting (FCB), in which elements are mounted on a substrate through bumps without adjustment, is drawing attention.
【０００３】従来任意な材料の微小の接合バンプを形成
した基板として、微小なポンチとダイスとを用いてリボ
ン状の接合金属シートを打ち抜くと同時に実装基板上の
接合パッドに押しつけ、その後接続金属シートから打ち
抜いた金属片を溶融して半球状にする方法により製作し
た基板がある（詳細は特願平２−２７８０８８、伊藤
他、アレイ状光素子用サブ基板の製作方法）。Conventionally, as a substrate on which minute bonding bumps of any material are formed, a ribbon-shaped bonding metal sheet is punched using a minute punch and a die and simultaneously pressed against a bonding pad on a mounting substrate, and then a connecting metal sheet. There is a substrate manufactured by a method in which a metal piece punched out from is melted into a hemispherical shape (for details, refer to Japanese Patent Application No. 2-278088, Ito et al., Sub-substrate for arrayed optical device).
【０００４】[0004]
【発明が解決しようとする課題】上述の従来の基板の製
作においてポンチとダイスで打ち抜かれた金属片は、実
装基板上の接合パッドに熱圧着によって仮固定される。
接合パッド表面が平滑のな場合、金属片とパッドの摩擦
力が小さくて密着力が弱くなる。従ってバンプどうしの
不着が生じ、実装基板作製歩留まりの低下を招く。金属
片とパッドとの密着力を強くするために、ポンチの押圧
力を増加するとポンチの摩耗、あるいは破損、基板の損
傷等の不具合が生じる。また、接合部の温度の上昇によ
り金属材料を軟化させて密着力を増加させる場合は、金
属材料の酸化、ポンチへの金属片の不着等の問題が生じ
る。A metal piece punched out by a punch and a die in the above-described conventional board fabrication is temporarily fixed to a bonding pad on a mounting board by thermocompression bonding.
When the surface of the bonding pad is smooth, the frictional force between the metal piece and the pad is small and the adhesion is weak. Therefore, the bumps are not attached to each other, and the yield of manufacturing the mounting substrate is reduced. If the pressing force of the punch is increased in order to increase the adhesion between the metal piece and the pad, problems such as abrasion or breakage of the punch and damage to the substrate occur. Further, when the metal material is softened by increasing the temperature of the joint to increase the adhesion, problems such as oxidation of the metal material and non-adhesion of the metal piece to the punch occur.
【０００５】本発明の目的は上記の問題点を解決し、良
好な半田バンプとパッドの密着性を確保できる実装基板
を提供することにある。An object of the present invention is to solve the above-mentioned problems and to provide a mounting board which can secure good adhesion between solder bumps and pads.
【０００６】[0006]
【課題を解決するための手段】本発明は、基板上の接合
パッドへ金属片を圧着した後に前記金属片を溶融して半
田バンプとする半田バンプ実装基板において、前記接合
パッドの表面に凹凸が設けられたことを特徴とし、基板
の表面をラッピング加工により荒らし微小な凹凸を設け
ることにより、または接合パッドを複数に分割したり、
接合パッドに基板の表面にまで至る複数の穴を設けるこ
とで実現できる。また、接合パッドの表面層の金属のみ
を複数に分割したり、複数の穴を設けてもよいし、接合
パッドの表面層の金属に凹凸を設けて下地の金属の表面
は前記表面層の金属に完全に覆われる状態となるように
してもよい。According to the present invention, in a solder bump mounting substrate in which a metal piece is pressure-bonded to a bonding pad on a substrate and then the metal piece is melted to form a solder bump, unevenness is formed on the surface of the bonding pad. It is characterized by being provided, by roughening the surface of the substrate by lapping processing to provide minute unevenness, or dividing the bonding pad into a plurality of,
This can be achieved by providing the bonding pad with a plurality of holes reaching the surface of the substrate. Further, only the metal of the surface layer of the bonding pad may be divided into a plurality of holes or a plurality of holes may be provided, or the metal of the surface layer of the bonding pad may be provided with irregularities so that the surface of the underlying metal is the metal of the surface layer. You may make it completely covered by.
【０００７】[0007]
【作用】本発明の半田実装基板は基板表面の少なくとも
接合パッド表面が平滑でない。接合パッドは一般に金属
多層膜Ｃｒ／Ｎｉ／Ａｕ，あるいはＴｉ／Ｐｔ／Ａｕ等
で構成されるが、基板表面にならって表面に凹凸があ
る。ポンチとダイスで打ち抜いた接合金属片を接合パッ
ドに押圧する際に、金属片が接合パッドの凹凸部に食い
込み、密着力が増加する。従って、接合パッド表面が平
滑な場合に生じていた密着力不足による金属片の不着、
あるいは脱落がなくなり実装基板作製歩留りが向上す
る。In the solder mounting board of the present invention, at least the bonding pad surface of the board surface is not smooth. The bonding pad is generally composed of a metal multilayer film Cr / Ni / Au, Ti / Pt / Au, or the like, but the surface has irregularities following the substrate surface. When the bonded metal piece punched out with a punch and a die is pressed against the bonding pad, the metal piece bites into the uneven portion of the bonding pad, and the adhesion is increased. Therefore, the non-adhesion of the metal piece due to the insufficient adhesion force that occurred when the surface of the bonding pad was smooth,
Alternatively, it does not fall off, and the mounting substrate manufacturing yield is improved.
【０００８】基板表面が平滑な場合、各々の接合パッド
自身に凹凸部を形成しても同様な効果が期待できる。例
えば、１つの接合パッドが複数に分割されていて部分的
に歯抜けの状態になっていると、打ち抜かれた金属片が
歯抜けの部分に食い込み密着力が増加する。続いて接合
金属を加熱溶融し半球状のバンプを形成すると、歯抜け
の部分だけバンプと接合パッドの接合面積が若干減少
し、接合力もそれに応じて低下する。バンプの接合力の
低下を防ぐには、表面層の金属であるＡｕのみを分割す
れば良い。Ａｕ層の凹凸部に接合金属が食い込んで密着
力が十分確保できる。また、接合金属が溶融すればＡｕ
の下地の金属、例えばＮｉと接合金属が接合し接合面積
は分割しない場合と同等になる。When the surface of the substrate is smooth, the same effect can be expected by forming irregularities on each bonding pad itself. For example, when one bonding pad is divided into a plurality of parts and is partially in a missing tooth state, the punched metal piece bites into the missing tooth portion and the adhesive force increases. Then, when the bonding metal is heated and melted to form a hemispherical bump, the bonding area between the bump and the bonding pad is slightly reduced only in the missing tooth portion, and the bonding force is accordingly reduced. In order to prevent a decrease in the bonding force of the bumps, it is sufficient to divide only Au, which is the metal of the surface layer. The bonding metal bites into the irregularities of the Au layer to ensure sufficient adhesion. If the joining metal melts, Au
The underlying metal, for example Ni, is bonded to the bonding metal, and the bonding area is the same as when it is not divided.
【０００９】Ａｕの下地の金属が接合金属となじまな
い、例えばＣｒの場合は、やはりＡｕの歯抜けの部分だ
け接合面積が減少する。この場合でもＣｒ層全面にＡｕ
層が少しでも残るようにＡｕ層を加工する。即ち凸状に
パターン化することで解決できる。In the case where the underlying metal of Au is not compatible with the joining metal, for example, Cr, the joining area is reduced only by the missing tooth portion of Au. Even in this case, Au is entirely formed on the Cr layer.
The Au layer is processed so that any layer remains. That is, the problem can be solved by forming a convex pattern.
【００１０】従来、打ち抜かれた金属片を安定に歩留り
良く実装基板に密着することが困難であったが、本方法
によれば容易に可能となる。In the past, it has been difficult to bring punched metal pieces into close contact with the mounting substrate with stable yield, but this method makes it easy.
【００１１】[0011]
【実施例】以下、本発明について図面を参照して詳細に
説明する。DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described in detail below with reference to the drawings.
【００１２】図１（ａ）は、本発明の一実施例を示す半
田バンプを接合する前の状態の基板の断面図である。FIG. 1 (a) is a sectional view of a substrate before solder bumps are bonded, showing an embodiment of the present invention.
【００１３】光素子あるいは電気素子を実装するＳｉ等
の基板１１上に、金属多層膜、例えばＮｉＣｒ／Ａｕで
構成した接合パッド１３が蒸着あるいはスパッタリング
によってそれぞれ約５００オングストローム、２００オ
ングストローム設けられている。図１（ｂ）のように、
直径が約１００μｍの微小なポンチ１５及びダイス１６
を用いてＡｕＳｎのような接合金属シート１７を打ち抜
いた金属片１８が、約１５０μｍφの接合パッド１３上
に熱圧着によって仮固定され、続いて仮固定された金属
片１８を溶融して図１（ｃ）の様な半球上のバンプ１９
が形成される。On a substrate 11 made of Si or the like on which an optical element or an electric element is mounted, a metal multilayer film, for example, a bonding pad 13 made of NiCr / Au is provided by vapor deposition or sputtering by about 500 Å and 200 Å, respectively. As shown in Fig. 1 (b),
Minute punch 15 and die 16 with a diameter of about 100 μm
A metal piece 18 obtained by punching out a bonding metal sheet 17 such as AuSn is temporarily fixed on the bonding pad 13 having a diameter of about 150 μm by thermocompression bonding, and then the temporarily fixed metal piece 18 is melted to form the metal piece 18 shown in FIG. bump 19 on hemisphere like c)
Is formed.
【００１４】従来、Ｓｉのような材質の基板１１の表面
１２は鏡面に仕上げられ平滑な面である。金属片１８は
ポンチ１５で接合パッド１３に押圧されるが、この場合
ポンチ１５に押された金属片１８と電極パッド１３の摩
擦力が小さいのでポンチ先端がすべる不具合が生じる。
従って、バンプ作製の歩留まりが低下する。Conventionally, the surface 12 of the substrate 11 made of a material such as Si is mirror-finished and is a smooth surface. The metal piece 18 is pressed against the bonding pad 13 by the punch 15, but in this case, since the frictional force between the metal piece 18 pressed by the punch 15 and the electrode pad 13 is small, there occurs a problem that the tip of the punch slips.
Therefore, the yield of bump fabrication is reduced.
【００１５】本実施例では敢えて基板１１の表面１２を
ラッピング加工等により荒らして微小な凹凸を設けてい
る。従い、接合パッド１３の表面も微小な凹凸が形成さ
れている。表面が荒れているので金属片１８と電極パッ
ド１３の密着面積が大きくなり、かつ金属片１８が接合
パッド１３の凹部にくいこむので互いの密着力が確保さ
れる。In the present embodiment, the surface 12 of the substrate 11 is intentionally roughened by lapping or the like to form fine irregularities. Therefore, the surface of the bonding pad 13 is also formed with minute irregularities. Since the surface is rough, the contact area between the metal piece 18 and the electrode pad 13 is large, and the metal piece 18 is recessed into the concave portion of the bonding pad 13, so that the mutual adhesive force is secured.
【００１６】基板表面１２が平滑な面である必要がある
場合には、接合パッド１３の構造の工夫によって金属片
１８の密着力を確保できる。図２（ａ）はその一例であ
る。１つの接合パッド１３が複数に分割されている。ポ
ンチで押圧された金属片１８は分割された接合パッド１
３に接触すると、図２（ｂ）のように接合パッド１３の
形状にならい、凹部に入り込み機械的に強固にかみ合
う。従って密着力が増加する。金属片１８を溶融すると
半球状のバンプ１９となるが、接合パッド１３の歯抜け
の分だけ金属片１８との接合面積が減少するのでバンプ
１９の基板１１に対する接合力が若干低下する。When the substrate surface 12 needs to be a smooth surface, the adhesive force of the metal piece 18 can be secured by devising the structure of the bonding pad 13. FIG. 2 (a) is an example. One bonding pad 13 is divided into a plurality. The metal piece 18 pressed by the punch is the divided bonding pad 1
When it comes into contact with the contact pad 3, it follows the shape of the bonding pad 13 as shown in FIG. Therefore, the adhesion is increased. When the metal piece 18 is melted, it becomes a hemispherical bump 19. However, the bonding area of the bonding pad 13 with the metal piece 18 is reduced by the amount of the missing tooth of the bonding pad 13, so that the bonding force of the bump 19 to the substrate 11 is slightly reduced.
【００１７】このようなバンプ１９の接合力の低下を生
じない方策としては、図３のようにパッド１３の表面の
金属層であるＡｕのみを複数に分割すれば良い。仮固定
時には金属片１８が接合パッド１３のＡｕ層の凹部に食
い込んで密着力が確保され、溶融後のバンプ形成時には
バンプ１９と表面層のＡｕあるいは下地のＮｉＣｒが合
金を形成し接合力が十分なものが得られる。As a measure for preventing such a decrease in the bonding force of the bumps 19, only Au, which is the metal layer on the surface of the pad 13, may be divided into a plurality as shown in FIG. At the time of temporary fixing, the metal piece 18 digs into the concave portion of the Au layer of the bonding pad 13 to secure the adhesive force, and at the time of forming the bump after melting, the bump 19 and Au of the surface layer or the underlying NiCr form an alloy, and the bonding force is sufficient. You can get something.
【００１８】Ａｕの下地の金属層が例えばＣｒのように
金属片１８であるＡｕＳｎと反応しにくい場合には、金
属片１８の接合金属はＡｕのみと接合することになるの
で図３に示す構造ではバンプ１９とパッド１３との接合
面積が小さく、バンプの接合力が低下する。しかし、図
４のように表面層のＡｕ層を凸状にパターニングし、Ａ
ｕ層が下地のＣｒ層の全面を覆う構造にすれば金属片１
８の溶融後のバンプ１８は接合パッド１３全面に接合し
接合力は確保される。When the underlying metal layer of Au does not easily react with AuSn which is the metal piece 18 like Cr, for example, the joining metal of the metal piece 18 joins only Au, so the structure shown in FIG. Then, the bonding area between the bump 19 and the pad 13 is small, and the bonding force of the bump is reduced. However, as shown in FIG. 4, by patterning the Au layer of the surface layer into a convex shape,
If the u layer covers the entire surface of the underlying Cr layer, the metal piece 1
The bumps 18 after melting 8 are bonded to the entire surface of the bonding pad 13 and the bonding force is secured.
【００１９】上述の実施例では、金属片１８を組成する
接合金属にＡｕＳｎを例にとって説明したが、ＰｂＳｎ
等の他の接合金属も同様に適用できる。また、実装基板
としてＳｉを例に示したが、アルミナやガラス等の他の
材料の基板でもかまわない。In the above-described embodiment, AuSn was used as an example of the joining metal composing the metal piece 18, but PbSn was used.
Other joining metals, such as Further, although Si is shown as an example of the mounting substrate, a substrate made of other material such as alumina or glass may be used.
【００２０】また上述の実施例では、微小なパンチ、ダ
イスを用いた打ち抜きによるバンプ形成で使用する金属
シートを示したが、あらじめ成形されたプリフォームを
仮固定する場合でも同様な効果が得られる。Further, in the above-mentioned embodiment, the metal sheet used for the bump formation by punching with the fine punch and die is shown, but the same effect can be obtained even in the case of temporarily fixing the preform formed by rough molding. can get.
【００２１】さらに上述の実施例では接合パッド１３を
複数に分割するもので示したが、接合パッド１３に複数
の穴や凹部を設けてもよい。Further, although the bonding pad 13 is divided into a plurality of pieces in the above embodiment, the bonding pad 13 may be provided with a plurality of holes or recesses.
【００２２】[0022]
【発明の効果】以上説明したように本発明によるば、良
好な半田バンプの密着性を確保できる実装基板を実現で
きる。As described above, according to the present invention, it is possible to realize a mounting board which can secure good solder bump adhesion.
【図１】（ａ）は本発明の一実施例の半田バンプを接合
する前の基板の断面図，（ｂ）は（ａ）に示す基板にポ
ンチ１５により金属片１８を熱圧着する状態を示す断面
図，（ｃ）は（ａ）に示す基板に半田バンプを接合した
状態を示す断面図である。1A is a cross-sectional view of a substrate before solder bumps according to an embodiment of the present invention are bonded, and FIG. 1B is a state in which a metal piece 18 is thermocompression bonded to a substrate shown in FIG. The sectional view shown in FIG. 3C is a sectional view showing a state where solder bumps are joined to the substrate shown in FIG.
【図２】（ａ）は本発明の他の実施例の半田バンプを接
合する前の基板の断面図，（ｂ）は（ａ）に示す基板に
金属片を熱圧着したものの断面図である。FIG. 2A is a cross-sectional view of a substrate before solder bumps according to another embodiment of the present invention are joined, and FIG. 2B is a cross-sectional view of a substrate shown in FIG. .
【図３】本発明のさらに他の実施例の半田バンプを接合
する前の基板の断面図である。FIG. 3 is a cross-sectional view of a substrate before bonding solder bumps according to another embodiment of the present invention.
【図４】本発明のさらに他の実施例の半田バンプを接合
する前の基板の断面図である。FIG. 4 is a cross-sectional view of a board before solder bumps are bonded according to another embodiment of the present invention.
【符号の説明】 １１ 基板 １２ 基板表面 １３ 接合パッド １５ 微小ポンチ １６ 微小ダイス １７ 金属シート １８ 接合金属片 １９ バンプ[Explanation of Codes] 11 Substrate 12 Substrate Surface 13 Bonding Pad 15 Micro Punch 16 Micro Die 17 Metal Sheet 18 Bonding Metal Piece 19 Bump
───────────────────────────────────────────────────── フロントページの続き (72)発明者 金山 義信 東京都港区芝五丁目７番１号日本電気株式 会社内 ─────────────────────────────────────────────────── ─── Continued Front Page (72) Inventor Yoshinobu Kanayama 5-7-1 Shiba, Minato-ku, Tokyo NEC Corporation
Claims (8)
後に前記金属片を溶融して半田バンプとする半田バンプ
実装基板において、前記接合パッドの表面に凹凸が設け
られたことを特徴とする半田バンプ実装基板。1. A solder bump mounting substrate in which a metal piece is pressure-bonded to a bonding pad on a substrate and then the metal piece is melted to form a solder bump, wherein unevenness is provided on a surface of the bonding pad. Solder bump mounting board.
られる部分が平滑でない請求項１記載の半田バンプ実装
基板。2. The solder bump mounting substrate according to claim 1, wherein at least a portion of the surface of the substrate where the bonding pad is provided is not smooth.
し微小な凹凸を設けた請求項２記載の半田バンプ実装基
板。3. The solder bump mounting substrate according to claim 2, wherein the surface of the substrate is roughened by lapping to provide fine irregularities.
記載の半田バンプ実装構造。4. The bonding pad is divided into a plurality of parts.
Solder bump mounting structure described.
が設けられた請求項１記載の半田バンプ実装構造。5. The solder bump mounting structure according to claim 1, wherein the bonding pad is provided with a plurality of holes reaching the surface of the substrate.
され下地の金属は分割されていない請求項１記載の半田
バンプ実装構造。6. The solder bump mounting structure according to claim 1, wherein the metal of the surface layer of the bonding pad is divided into a plurality of pieces, and the underlying metal is not divided.
の表面にまで至る複数の穴が設けられた請求項１記載の
半田バンプ実装構造。7. The solder bump mounting structure according to claim 1, wherein the metal of the surface layer of the bonding pad is provided with a plurality of holes extending to the surface of the underlying metal.
れ下地の金属の表面は前記表面層の金属に覆われている
請求項１記載の半田バンプ実装構造。8. The solder bump mounting structure according to claim 1, wherein the metal of the surface layer of the bonding pad is provided with irregularities, and the surface of the underlying metal is covered with the metal of the surface layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5071394A JPH06283536A (en) | 1993-03-30 | 1993-03-30 | Solder bump packaging substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5071394A JPH06283536A (en) | 1993-03-30 | 1993-03-30 | Solder bump packaging substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH06283536A true JPH06283536A (en) | 1994-10-07 |
Family
ID=13459262
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5071394A Pending JPH06283536A (en) | 1993-03-30 | 1993-03-30 | Solder bump packaging substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH06283536A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1997019466A1 (en) * | 1995-11-22 | 1997-05-29 | Fry's Metals, Inc. | Method and apparatus for forming solder bumps on a substrate |
| JP2002170899A (en) * | 2000-12-04 | 2002-06-14 | Ibiden Co Ltd | Flip chip mounting board and method of manufacturing the same |
| JP2011100778A (en) * | 2009-11-04 | 2011-05-19 | Panasonic Electric Works Co Ltd | Circuit board, and semiconductor device mounted with component |
| CN102612867A (en) * | 2011-09-30 | 2012-07-25 | 千住金属工业株式会社 | Solder piece, small solder piece provider, and method for producing solder piece |
| US8929092B2 (en) | 2009-10-30 | 2015-01-06 | Panasonic Corporation | Circuit board, and semiconductor device having component mounted on circuit board |
| US9332642B2 (en) | 2009-10-30 | 2016-05-03 | Panasonic Corporation | Circuit board |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5354469A (en) * | 1976-10-28 | 1978-05-17 | Seiko Epson Corp | Semiconductor integrated circuit |
-
1993
- 1993-03-30 JP JP5071394A patent/JPH06283536A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5354469A (en) * | 1976-10-28 | 1978-05-17 | Seiko Epson Corp | Semiconductor integrated circuit |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1997019466A1 (en) * | 1995-11-22 | 1997-05-29 | Fry's Metals, Inc. | Method and apparatus for forming solder bumps on a substrate |
| JP2002170899A (en) * | 2000-12-04 | 2002-06-14 | Ibiden Co Ltd | Flip chip mounting board and method of manufacturing the same |
| JP4543544B2 (en) * | 2000-12-04 | 2010-09-15 | イビデン株式会社 | Flip chip mounting substrate and manufacturing method thereof |
| US8929092B2 (en) | 2009-10-30 | 2015-01-06 | Panasonic Corporation | Circuit board, and semiconductor device having component mounted on circuit board |
| US9332642B2 (en) | 2009-10-30 | 2016-05-03 | Panasonic Corporation | Circuit board |
| US9351402B2 (en) | 2009-10-30 | 2016-05-24 | Panasonic Corporation | Circuit board, and semiconductor device having component mounted on circuit board |
| JP2011100778A (en) * | 2009-11-04 | 2011-05-19 | Panasonic Electric Works Co Ltd | Circuit board, and semiconductor device mounted with component |
| CN102612867A (en) * | 2011-09-30 | 2012-07-25 | 千住金属工业株式会社 | Solder piece, small solder piece provider, and method for producing solder piece |
| WO2013046450A1 (en) * | 2011-09-30 | 2013-04-04 | 千住金属工業株式会社 | Solder piece, chip solder, and method for manufacturing solder piece |
| US8991679B2 (en) | 2011-09-30 | 2015-03-31 | Senju Metal Industry Co., Ltd. | Solder piece, chip solder and method of fabricating solder piece |
| US9327364B2 (en) | 2011-09-30 | 2016-05-03 | Senju Metal Industry Co., Ltd. | Solder piece, chip solder and method of fabricating solder piece |
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