JPH06246479A - Joined metallic sheet - Google Patents
Joined metallic sheetInfo
- Publication number
- JPH06246479A JPH06246479A JP3593393A JP3593393A JPH06246479A JP H06246479 A JPH06246479 A JP H06246479A JP 3593393 A JP3593393 A JP 3593393A JP 3593393 A JP3593393 A JP 3593393A JP H06246479 A JPH06246479 A JP H06246479A
- Authority
- JP
- Japan
- Prior art keywords
- metal
- metal sheet
- bonding
- weight ratio
- melting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electric Connection Of Electric Components To Printed Circuits (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、光通信用モジュールや
電子機器等に組み込まれる実装基板に、光／電気素子を
固定する際に用いる接合金属シートに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a joining metal sheet used for fixing an optical / electrical element to a mounting substrate incorporated in an optical communication module, electronic equipment or the like.
【０００２】[0002]
【従来の技術】光通信技術は、光ファイバ、半導体レー
ザ（ＬＤ）、発光ダイオード（ＬＥＤ）、フォトダイオ
ード（ＰＤ）を始めとして、光スイッチ、光変調器、ア
イソレータ、光導波路等における受動、能動素子の高性
能、高機能化により、応用範囲が拡大されつつある。近
年、より多くの情報を伝達する要求が高まる中で、コン
ピュータ端末間、交換器や大型コンピュータ間のデータ
伝送を実時間で並列に行う平列伝送、あるいは一般家庭
への高度情報サービス等、加入者系への適用が考えられ
ている。2. Description of the Related Art Optical communication technologies include optical fibers, semiconductor lasers (LDs), light emitting diodes (LEDs), photodiodes (PDs), optical switches, optical modulators, isolators, and optical waveguides. The range of applications is expanding due to high performance and high functionality of devices. In recent years, with the increasing demand for transmitting more information, parallel transmission of parallel data transmission between computer terminals, exchanges or large computers in real time, or subscription of advanced information services to ordinary households, etc. It is considered to be applied to the human system.
【０００３】この光加入者系の場合、光素子はもとより
光素子を機能的に構成した光モジュールの低価格化が不
可欠とされている。電子機器においても、機器の軽薄短
小化の要求が年々強まり、コスト低減が求められてい
る。光モジュールや電子機器の低価格化の有効な手段と
して、光／電子素子を接合バンプを介して無調整で基板
上に実装するフリップチップ実装（ＦＣＢ）が注目され
ている。この任意な材料を用いた微小な接合バンプを形
成する方法として、図５の断面図に示すように、微小ポ
ンチ１６と微小ダイス１７とを用いてリボン状の接合金
属シート１０を実装基板１１の接合パッド１２上に打ち
抜く方法がある（例えば特開平４−１５２６８２号）。In the case of this optical subscriber system, it is indispensable to reduce the cost of the optical module, which is functionally constituted of the optical element as well as the optical element. In electronic devices as well, demands for lighter, thinner, shorter, and smaller devices are increasing year by year, and cost reduction is required. As an effective means for lowering the cost of optical modules and electronic devices, flip chip mounting (FCB), which mounts an optical / electronic element on a substrate without adjustment through bonding bumps, has been attracting attention. As a method of forming minute bonding bumps using this arbitrary material, as shown in the sectional view of FIG. 5, a ribbon-shaped bonding metal sheet 10 is mounted on a mounting substrate 11 by using a minute punch 16 and a minute die 17. There is a method of punching on the bonding pad 12 (for example, JP-A-4-152682).
【０００４】[0004]
【発明が解決しようとする課題】上述した実装基板に複
数の半田付け工程を必要とする場合、高温接合の半田材
としてＡｕを含むＡｕＳｎやＡｕＧｅ等の合金が用いら
れる。しかし、図５に示すようにＡｕＳｎ等の接合金属
シート１０は、空気中に露出すると酸素と反応して表面
に薄い酸化膜１８が自然形成され、溶融する際に液状に
広がらないという不具合が生ずる。即ち、ぬれ性が悪く
なり接合バンプを形成しない。When a plurality of soldering steps are required for the above-mentioned mounting board, an alloy such as AuSn or AuGe containing Au is used as a solder material for high temperature bonding. However, as shown in FIG. 5, the bonding metal sheet 10 made of AuSn or the like reacts with oxygen when exposed to the air to spontaneously form a thin oxide film 18 on the surface thereof, which causes a problem that the thin metal film 18 does not spread to a liquid when melted. . That is, the wettability is deteriorated and the bonding bump is not formed.
【０００５】また、ＡｕＳｎのような固い材料を微小ポ
ンチ１６と微小ダイス１７を用いて打ち抜く場合、材料
を加熱し軟化させる必要があるため、表面に酸化膜１８
の形成を促進し、ぬれ性をさらに悪化させる結果とな
る。酸化膜１８の形成を避ける方法として、酸化されな
い金属、例えばＡｕで接合金属を覆う方法がある（特開
昭６１−１３７６９７号）が、接合金属の成分比が変わ
ってしまい、融点の変化、共晶点からのずれが生じてし
まう。Further, when a hard material such as AuSn is punched out by using the fine punch 16 and the fine die 17, it is necessary to heat and soften the material, so that an oxide film 18 is formed on the surface.
Formation is promoted and the wettability is further deteriorated. As a method of avoiding the formation of the oxide film 18, there is a method of covering the bonding metal with a metal that is not oxidized, for example, Au (Japanese Patent Laid-Open No. 61-137697). However, the composition ratio of the bonding metal is changed, and the melting point changes. The deviation from the crystal point occurs.
【０００６】また、溶融時にフラックスを使用しぬれ性
を良くすることもできるが、洗浄を必要とする事、さら
に洗浄しきれないフラックス残渣のアウトガスがチップ
の信頼性を著しく劣化させるという難点がある。また、
機械的に金属表面の酸化膜を破壊するスクラブ方式もあ
るが、ボイドの発生、接合の均質性、生産性が問題とな
る。Further, although flux can be used at the time of melting to improve wettability, there is a drawback that cleaning is required and that outgas of flux residue that cannot be cleaned significantly deteriorates chip reliability. . Also,
There is also a scrubbing method in which the oxide film on the metal surface is mechanically destroyed, but problems such as generation of voids, homogeneity of bonding, and productivity are problems.
【０００７】本発明の目的は上記の問題点を解決し、良
好なぬれ性を確保できる接合金属シートを提供すること
にある。An object of the present invention is to solve the above problems and to provide a joining metal sheet which can secure good wettability.
【０００８】[0008]
【課題を解決するための手段】本発明の接合金属シート
は、下記の様に構成されている。The joining metal sheet of the present invention is constructed as follows.
【０００９】（１）微小ポンチとダイスを用いたプレス
打ち抜きにより実装基板上へバンプを形成する際に使用
する接合金属シートにおいて、Ａｕと金属Ｘとから構成
される接合金属がＡｕ／Ｘ／Ａｕの３層構造からなる。(1) In a joining metal sheet used when forming bumps on a mounting substrate by press punching using a fine punch and a die, the joining metal composed of Au and metal X is Au / X / Au. It has a three-layer structure.
【００１０】（２）金属ＸがＳｎであって、ＡｕとＳｎ
の重量比が略８対２である。(2) The metal X is Sn, and Au and Sn
The weight ratio is about 8 to 2.
【００１１】（３）金属ＸがＧｅであって、ＡｕとＧｅ
の重量比が略８８対１２である。(3) The metal X is Ge, and Au and Ge
The weight ratio is about 88:12.
【００１２】（４）金属ＸがＳｉであって、ＡｕとＳｉ
の重量比が略９７対３である。(4) The metal X is Si, and Au and Si
The weight ratio is about 97: 3.
【００１３】（５）金属ＸがＰｂであって、ＡｕとＰｂ
の重量比が略１５対８５である。(5) The metal X is Pb, and Au and Pb
The weight ratio is about 15:85.
【００１４】[0014]
【作用】本発明の接合金属シートはＡｕ／Ｘ／Ａｕの３
層構造で、表面が酸化されないＡｕで保護されている。
従って、打ち抜き、リフローのバンプ形成プロセスを通
して、従来の接合金属シートで問題であった酸化しやす
い金属Ｘと酸素との結合は生じず、溶融時に良好なぬれ
性を示す。The function of the joining metal sheet of the present invention is Au / X / Au.
It has a layered structure and its surface is protected by Au which is not oxidized.
Therefore, through the punching and reflow bump forming processes, the bond between the easily oxidizable metal X and oxygen, which was a problem in the conventional bonded metal sheet, does not occur, and good wettability is exhibited during melting.
【００１５】また、接合金属界面を圧延、蒸着等により
拡散状態にし、ＡｕとＸの重量比を共晶点が存在するよ
うに設定すれば（金属ＸがＳｎの場合は図４に示すよう
に略８対２）共晶点で溶融し、その時の溶融金属の表面
張力によりチップが自動的に位置決めされるセルフアラ
イン効果も期待でき、チップ実装が容易となる。接合金
属を合金の形態で打ち抜き、リフローすると、従来は空
気中の酸素と反応して接合金属表面に薄い被膜を生じ、
ぬれ性を劣化させる不具合が生じるが、本発明のシート
を用いれば容易に解決できる。If the joint metal interface is diffused by rolling, vapor deposition or the like, and the weight ratio of Au and X is set so that the eutectic point exists (as shown in FIG. 4 when the metal X is Sn, as shown in FIG. 4). Approximately 8 to 2) Melting at the eutectic point, the self-alignment effect that the chip is automatically positioned by the surface tension of the molten metal at that time can be expected, and the chip mounting becomes easy. When the joining metal is punched out in the form of an alloy and reflowed, it reacts with oxygen in the air to produce a thin film on the surface of the joining metal.
Although a problem that deteriorates wettability occurs, it can be easily solved by using the sheet of the present invention.
【００１６】[0016]
【実施例】以下、本発明について図面を参照して詳細に
説明する。図１は本発明の接合金属シートの一実施例を
示す断面図である。本実施例は、Ａｕ／Ｓｎ／Ａｕの３
層構造となっており、図４に示すようにＡｕとＳｎの重
量比は略８対２である。図２（ａ）、（ｂ）は接合バン
プ形成の工程断面図である。図２（ａ）に示すように、
直径が約１００μｍの微小ポンチ１６と微小ダイス１７
によって、約１００μｍ厚のリボン状のシート材から打
ち抜かれた接合金属片は、チップを搭載するＳｉ等の実
装基板１１の直径が約１００μｍで表面がＡｕである接
合パッド１２上に仮固定される。Ｓｎ１３は酸化されに
くいＡｕ１４に挟まれた構成となっているので、Ｓｎ１
３は全く表面に露出せず、打ち抜き及びリフローのバン
プ形成プロセスを通して空気中の酸素に触れることはな
い。従って、溶融時のぬれ性劣化の要因となる酸化膜が
形成されず、フラックスやスクラブなしで溶融が可能と
なり、図２（ｂ）のように接合バンプ１５を形成でき
る。DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described in detail below with reference to the drawings. FIG. 1 is a sectional view showing an embodiment of the bonded metal sheet of the present invention. In this embodiment, 3 of Au / Sn / Au is used.
It has a layered structure, and as shown in FIG. 4, the weight ratio of Au and Sn is about 8: 2. FIGS. 2A and 2B are process cross-sectional views of forming a bonding bump. As shown in FIG. 2 (a),
Micro punch 16 and micro die 17 with a diameter of about 100 μm
Thus, the joining metal piece punched out from the ribbon-shaped sheet material having a thickness of about 100 μm is temporarily fixed on the joining pad 12 having a diameter of the mounting substrate 11 such as Si for mounting the chip of about 100 μm and a surface of Au. . Since Sn13 is sandwiched between Au14 which is hard to be oxidized, Sn1
3 is not exposed to the surface at all and does not come into contact with oxygen in the air through the punching and reflow bump forming processes. Therefore, an oxide film that causes deterioration of wettability at the time of melting is not formed, melting is possible without flux or scrubbing, and the bonding bump 15 can be formed as shown in FIG. 2B.
【００１７】図３はＡｕＳｎ合金の平衡状態図である。
この図によれば、Ｓｎが重量比で２０％のときに液相線
と固相線が共晶点Ｅで交わり、共晶温度は２７８℃であ
る。この共晶点においてＡｕＳｎは半溶融のペースト状
態は存在せず、溶融開始と同時に液状となるので表面張
力は最大となる。一方、他の重量比では共晶点は存在し
ないので、温度を上げて溶融温度に達しても液体と固体
の状態が混在し、徐々に液状の割合が増加する変化をす
る。従って、共晶金属で通常見られる表面張力は極めて
小さく、フリップチップ実装には適用できない。FIG. 3 is an equilibrium diagram of AuSn alloy.
According to this figure, when Sn is 20% by weight, the liquidus line and the solidus line intersect at the eutectic point E, and the eutectic temperature is 278 ° C. At this eutectic point, AuSn does not exist in a semi-molten paste state and becomes liquid at the start of melting, so that the surface tension becomes maximum. On the other hand, since the eutectic point does not exist at other weight ratios, even if the temperature is raised to reach the melting temperature, the liquid and solid states are mixed, and the liquid ratio changes gradually. Therefore, the surface tension normally found in eutectic metals is extremely small and cannot be applied to flip chip mounting.
【００１８】しかし、本発明では、Ａｕ１４とＳｎ１３
の重量比が略８対２であるので、約２８０℃で共晶組成
となり、チップを実装した際にＡｕＳｎの表面張力でチ
ップの位置決めが自動的に行われるセルフアライン効果
も期待できる。従来のＡｕＳｎは表面保護されておらず
単独で使用されているために、空気中の酸素と反応して
ＡｕＳｎ表面に薄い酸化膜が形成され、ぬれ性を劣化さ
せていたが、本実施例を用いれば容易に解決できる。However, in the present invention, Au14 and Sn13 are used.
Since the weight ratio is about 8 to 2, a eutectic composition is formed at about 280 ° C., and when the chip is mounted, the self-alignment effect of automatically positioning the chip by the surface tension of AuSn can be expected. Since conventional AuSn is not surface-protected and is used alone, it reacts with oxygen in the air to form a thin oxide film on the AuSn surface and deteriorates the wettability. It can be easily solved if used.
【００１９】本実施例では、接合金属としてＡｕＳｎに
ついて説明したが、他のＡｕを含む接合金属であるＡｕ
Ｇｅ、ＡｕＳｉ、ＡｕＰｂでも同様に説明できる。即
ち、それぞれの金属で共晶点が存在するような組成を選
択することである。図４の図表には、共晶合金の融点と
組成との関係を示している。この図によれば、ＡｕＧｅ
（３５６℃）、ＡｕＳｉ（３７０℃）、ＡｕＰｂ（２１
５℃）の組成は、重量比でそれぞれ略８８対１２、略９
７対３、略１５対８５である。In this embodiment, AuSn has been described as the joining metal, but Au which is another joining metal containing Au.
The same applies to Ge, AuSi, and AuPb. That is, it is necessary to select a composition in which each metal has a eutectic point. The diagram of FIG. 4 shows the relationship between the melting point and the composition of the eutectic alloy. According to this figure, AuGe
(356 ° C), AuSi (370 ° C), AuPb (21
The composition at 5 ° C. is about 88:12 and about 9 by weight, respectively.
7: 3, approximately 15:85.
【００２０】なお、本実施例における３層構造の接合金
属シートの製造方法は、接合する金属の種類によって圧
延構造でもよいし、あるいは蒸着、スパッタ等の成膜構
造でもよい。また、本実施例では、微小ポンチ、微小ダ
イスを用いて打ち抜きにより直接実装基板上にバンプを
形成する接合金属シートを示したが、あらかじめ別方法
で成形された金属シート個片のプリフォームを、接合パ
ッドに載せる方法でも同様な効果が得られる。The method for manufacturing the three-layer bonded metal sheet in this embodiment may be a rolling structure or a film forming structure such as vapor deposition or sputtering depending on the kind of metal to be bonded. In addition, in the present embodiment, the bonding metal sheet in which the bumps are directly formed on the mounting substrate by punching using the minute punch and the minute die is shown, but a preform of a metal sheet piece formed by another method in advance is used. The same effect can be obtained by the method of mounting on the bonding pad.
【００２１】[0021]
【発明の効果】以上説明したように本発明によれば、溶
融時に接合金属の表面がＡｕで保護されているので酸化
膜が生じない。よって、良好なぬれ性を確保したバンプ
を実装基板上に形成できる接合金属シートを実現でき
る。As described above, according to the present invention, since the surface of the joining metal is protected by Au during melting, no oxide film is formed. Therefore, it is possible to realize a bonded metal sheet capable of forming bumps with good wettability on a mounting substrate.
【図１】本発明の一実施例の接合金属シートの断面図で
ある。FIG. 1 is a cross-sectional view of a bonded metal sheet according to an embodiment of the present invention.
【図２】本発明の一実施例の接合金属シートを用いたバ
ンプ接合方法を説明する図で、同図（ａ）、（ｂ）は工
程断面図である。FIG. 2 is a diagram illustrating a bump joining method using a joining metal sheet according to an embodiment of the present invention, and FIGS. 2A and 2B are process cross-sectional views.
【図３】ＡｕＳｎ合金の平衡状態図である。FIG. 3 is an equilibrium diagram of AuSn alloy.
【図４】各種共晶合金の組成と融点の関係を示す図表で
ある。FIG. 4 is a chart showing the relationship between the composition and melting point of various eutectic alloys.
【図５】従来の接合金属シートを用いたバンプ形成方法
を説明する断面図である。FIG. 5 is a cross-sectional view illustrating a bump forming method using a conventional bonding metal sheet.
１０ 接合金属シート １１ 実装基板 １２ 接合パッド １３ Ｓｎ １４ Ａｕ １５ 接合バンプ １６ 微小ポンチ １７ 微小ダイス １８ 酸化膜 10 Bonding Metal Sheet 11 Mounting Substrate 12 Bonding Pad 13 Sn 14 Au 15 Bonding Bump 16 Micro Punch 17 Micro Die 18 Oxide Film
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.5 識別記号 庁内整理番号 ＦＩ 技術表示箇所 Ｈ０１Ｌ 21/321 Ｈ０５Ｋ 3/34 Ｈ 7128−4Ｅ (72)発明者 金山 義信 東京都港区芝五丁目７番１号日本電気株式 会社内─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 5 Identification number Reference number within the agency FI Technical indication location H01L 21/321 H05K 3/34 H 7128-4E (72) Inventor Yoshinobu Kanayama Shibago, Minato-ku, Tokyo Chome 7-1 NEC Corporation
Claims (5)
抜きにより実装基板上へ接合バンプを形成する際に使用
する接合金属シートにおいて、Ａｕと金属Ｘとから構成
される接合金属がＡｕ／Ｘ／Ａｕの３層構造であること
を特徴とする接合金属シート。1. In a bonding metal sheet used when forming bonding bumps on a mounting substrate by press punching using a fine punch and a die, the bonding metal composed of Au and metal X is Au / X / Au. A joined metal sheet having a three-layer structure of
の重量比が略８対２である請求項１記載の接合金属シー
ト。2. The metal X is Sn, and Au and Sn
2. The bonded metal sheet according to claim 1, wherein the weight ratio of is about 8 to 2.
の重量比が略８８対１２である請求項１記載の接合金属
シート。3. The metal X is Ge, and Au and Ge
2. The bonded metal sheet according to claim 1, wherein the weight ratio of is about 88:12.
の重量比が略９７対３である請求項１記載の接合金属シ
ート。4. The metal X is Si, and Au and Si
2. The bonded metal sheet according to claim 1, wherein the weight ratio of is about 97: 3.
の重量比が略１５対８５である請求項１記載の接合金属
シート。5. The metal X is Pb, and Au and Pb
2. The bonded metal sheet according to claim 1, wherein the weight ratio of is 15:85.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3593393A JPH06246479A (en) | 1993-02-25 | 1993-02-25 | Joined metallic sheet |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3593393A JPH06246479A (en) | 1993-02-25 | 1993-02-25 | Joined metallic sheet |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH06246479A true JPH06246479A (en) | 1994-09-06 |
Family
ID=12455832
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3593393A Pending JPH06246479A (en) | 1993-02-25 | 1993-02-25 | Joined metallic sheet |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH06246479A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08139095A (en) * | 1994-11-04 | 1996-05-31 | Nec Corp | Formation of solder bump |
| US5954262A (en) * | 1996-02-09 | 1999-09-21 | Yamaha Corporation | Soldering apparatus for providing a fixed quantity of solder piece onto target plate and method of soldering circuit component |
| JP2005079298A (en) * | 2003-08-29 | 2005-03-24 | Shin Etsu Handotai Co Ltd | Light emitting element and method of manufacturing the same |
| JP2009142890A (en) * | 2007-12-18 | 2009-07-02 | Mitsubishi Electric Corp | Laminated solder material, soldering method using the same, and solder junction |
| CN106298719A (en) * | 2016-09-13 | 2017-01-04 | 江苏纳沛斯半导体有限公司 | Metal bump structure and forming method thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5548494A (en) * | 1978-10-04 | 1980-04-07 | Sumitomo Metal Mining Co Ltd | Working method for gold solder |
| JPS567797A (en) * | 1979-06-29 | 1981-01-27 | Shin Etsu Chem Co Ltd | Organic silicon compound |
| JPH01237094A (en) * | 1988-03-18 | 1989-09-21 | Mitsubishi Metal Corp | Au-ag complex brazing filler for assembling semiconductor device |
| JPH04152682A (en) * | 1990-10-17 | 1992-05-26 | Nec Corp | Manufacture of sub-substrate for array-like optical element |
| JPH05329681A (en) * | 1991-12-10 | 1993-12-14 | Nec Corp | Multilayered brazing filler metal and its production and connecting method |
-
1993
- 1993-02-25 JP JP3593393A patent/JPH06246479A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5548494A (en) * | 1978-10-04 | 1980-04-07 | Sumitomo Metal Mining Co Ltd | Working method for gold solder |
| JPS567797A (en) * | 1979-06-29 | 1981-01-27 | Shin Etsu Chem Co Ltd | Organic silicon compound |
| JPH01237094A (en) * | 1988-03-18 | 1989-09-21 | Mitsubishi Metal Corp | Au-ag complex brazing filler for assembling semiconductor device |
| JPH04152682A (en) * | 1990-10-17 | 1992-05-26 | Nec Corp | Manufacture of sub-substrate for array-like optical element |
| JPH05329681A (en) * | 1991-12-10 | 1993-12-14 | Nec Corp | Multilayered brazing filler metal and its production and connecting method |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08139095A (en) * | 1994-11-04 | 1996-05-31 | Nec Corp | Formation of solder bump |
| US5954262A (en) * | 1996-02-09 | 1999-09-21 | Yamaha Corporation | Soldering apparatus for providing a fixed quantity of solder piece onto target plate and method of soldering circuit component |
| JP2005079298A (en) * | 2003-08-29 | 2005-03-24 | Shin Etsu Handotai Co Ltd | Light emitting element and method of manufacturing the same |
| JP2009142890A (en) * | 2007-12-18 | 2009-07-02 | Mitsubishi Electric Corp | Laminated solder material, soldering method using the same, and solder junction |
| CN106298719A (en) * | 2016-09-13 | 2017-01-04 | 江苏纳沛斯半导体有限公司 | Metal bump structure and forming method thereof |
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