JPH0622999Y2 - ペアツエナダイオード - Google Patents
ペアツエナダイオードInfo
- Publication number
- JPH0622999Y2 JPH0622999Y2 JP1988114538U JP11453888U JPH0622999Y2 JP H0622999 Y2 JPH0622999 Y2 JP H0622999Y2 JP 1988114538 U JP1988114538 U JP 1988114538U JP 11453888 U JP11453888 U JP 11453888U JP H0622999 Y2 JPH0622999 Y2 JP H0622999Y2
- Authority
- JP
- Japan
- Prior art keywords
- diode
- diodes
- pair
- circuit
- terminals
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 claims description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 10
- 229910052782 aluminium Inorganic materials 0.000 description 10
- 238000010586 diagram Methods 0.000 description 10
- 238000004804 winding Methods 0.000 description 9
- 239000003990 capacitor Substances 0.000 description 5
- 238000002955 isolation Methods 0.000 description 3
- 230000000630 rising effect Effects 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000012935 Averaging Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
Landscapes
- Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1988114538U JPH0622999Y2 (ja) | 1988-08-31 | 1988-08-31 | ペアツエナダイオード |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1988114538U JPH0622999Y2 (ja) | 1988-08-31 | 1988-08-31 | ペアツエナダイオード |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH0236058U JPH0236058U (enrdf_load_stackoverflow) | 1990-03-08 |
JPH0622999Y2 true JPH0622999Y2 (ja) | 1994-06-15 |
Family
ID=31355380
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1988114538U Expired - Lifetime JPH0622999Y2 (ja) | 1988-08-31 | 1988-08-31 | ペアツエナダイオード |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0622999Y2 (enrdf_load_stackoverflow) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012191166A (ja) * | 2011-02-23 | 2012-10-04 | Sharp Corp | 光センサおよび電子機器 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5638465U (enrdf_load_stackoverflow) * | 1979-08-31 | 1981-04-11 | ||
JPS6298674A (ja) * | 1985-10-25 | 1987-05-08 | Hitachi Ltd | 砒化ガリウム半導体装置 |
JPS6373673A (ja) * | 1986-09-17 | 1988-04-04 | Origin Electric Co Ltd | サ−ジ吸収用半導体装置 |
-
1988
- 1988-08-31 JP JP1988114538U patent/JPH0622999Y2/ja not_active Expired - Lifetime
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012191166A (ja) * | 2011-02-23 | 2012-10-04 | Sharp Corp | 光センサおよび電子機器 |
Also Published As
Publication number | Publication date |
---|---|
JPH0236058U (enrdf_load_stackoverflow) | 1990-03-08 |
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