JPH0621353B2 - High thermal conductivity composite circuit board manufacturing method - Google Patents
High thermal conductivity composite circuit board manufacturing methodInfo
- Publication number
- JPH0621353B2 JPH0621353B2 JP58235070A JP23507083A JPH0621353B2 JP H0621353 B2 JPH0621353 B2 JP H0621353B2 JP 58235070 A JP58235070 A JP 58235070A JP 23507083 A JP23507083 A JP 23507083A JP H0621353 B2 JPH0621353 B2 JP H0621353B2
- Authority
- JP
- Japan
- Prior art keywords
- high thermal
- circuit board
- composite circuit
- thermal conductivity
- board manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/02—Pretreatment of the material to be coated
- C23C14/021—Cleaning or etching treatments
- C23C14/022—Cleaning or etching treatments by means of bombardment with energetic particles or radiation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Vapour Deposition (AREA)
- Die Bonding (AREA)
- Physical Vapour Deposition (AREA)
Description
【発明の詳細な説明】 〔発明の技術分野〕 本発明は高熱伝導性複合回路基板の製造方法に関する。Description: TECHNICAL FIELD OF THE INVENTION The present invention relates to a method for manufacturing a highly heat-conductive composite circuit board.
近年電子機器の小型化、高集積化が進む中で、該機器に
搭載してある半導体各種素子から発せさられる熱の処理
が回路基板の設計、製造にとつて極めて重要な開発項目
のうちの一つとなつている。かかる案件に対し、各種の
方法で克服をしようとする試みがなされて来た。部品設
計、回路設計、材料などである。然しながら、半導体の
高密度実装への要求はかかる熱問題に必ずしも満足する
ものでないことは周知である。発生者等は永年にわたつ
て鋭意研究を進めて来た結果、アルミニウム(Al)銅(Cu)
などの高熱伝導性金属基体に絶縁性の高熱伝導性被膜を
形成し、半導体基板として、極めて良好な放熱性、経済
性のある放熱体の開発に成功した。As electronic devices have become smaller and more highly integrated in recent years, the treatment of heat generated by various semiconductor elements mounted on the devices is one of the most important development items for designing and manufacturing circuit boards. It is one. Attempts have been made to overcome these problems by various methods. These include parts design, circuit design, and materials. However, it is well known that the demand for high-density packaging of semiconductors does not always satisfy such thermal problems. As a result of the earnest research carried out over the years by the generators, aluminum (Al) copper (Cu)
We have succeeded in developing a radiator with extremely good heat dissipation and economy as a semiconductor substrate by forming an insulating high heat conductive coating on a high heat conductive metal substrate such as.
本発明は金属基体と熱伝導性絶縁膜との密着性に優れ、
かつ熱伝導、電気抵抗に優れた特性を有する高熱伝導性
複合回路基板の製造方法を提供する事を目的とする。The present invention has excellent adhesion between the metal substrate and the heat conductive insulating film,
Another object of the present invention is to provide a method for manufacturing a highly heat-conductive composite circuit board having excellent properties of heat conduction and electric resistance.
本発明はCu、Alからなる金属基体表面に、酸素、炭素、
窒素イオンの少なくとも１種の注入し前記基体表面に変
成層を形成する第１の工程と、前記変成層上に酸素、炭
素、窒素イオンの少なくとも１種を含有する高熱伝導性
絶縁性被膜を形成する第２の工程とを具備した高熱伝導
性複合回路基板の製造方法である。The present invention, Cu, Al, a metal substrate surface, oxygen, carbon,
First step of injecting at least one kind of nitrogen ion to form a metamorphic layer on the surface of the substrate, and forming a high thermal conductive insulating film containing at least one kind of oxygen, carbon and nitrogen ions on the metamorphic layer And a second step of performing a high thermal conductivity composite circuit board manufacturing method.
即ち、本発明はCu又はAl等の金属基体表面にＯ，Ｃ，Ｎ
イオンの少くも一種をイオンインプランテーシヨンなど
で注入し、前記基体表面に変成層を形成し、しかる後に
該変成層上にかかるイオン種を成分として含有する高熱
伝導性絶縁性被膜をイオンスパツタリング、CVDなどの
各種の膜形成技術を駆使し形成せしめた複合構造からな
る高熱伝導性複合回路基板の製造方法に係るものであ
る。That is, according to the present invention, O, C, N is formed on the surface of a metal substrate such as Cu or Al.
At least one kind of ions is implanted by ion implantation or the like to form a metamorphic layer on the surface of the substrate, and then a high thermal conductive insulating coating containing the ionic species as a component is formed on the metamorphic layer by an ion spa The present invention relates to a method for manufacturing a high thermal conductive composite circuit board having a composite structure formed by making full use of various film forming techniques such as tiling and CVD.
更に詳細は以下に説明する。本発明になるいわゆる変成
層は所望の絶縁膜（又は層）と金属基体との熱膨張係数
の差等何らかの原因による密着性の不良を改善するもの
である。即ち、あらかじめ、金属基体の表面に絶縁膜を
形成する元素のうち酸素、炭素、窒素等の非金属成分を
イオンなどの形態で注入することによつて、該金属基体
表面に変成層を形成し、これに所定の絶縁性複膜の形成
処理を施こす事により、該変成層の欠如している場合に
比べ極めて、良好な密着性が得られることを見い出し
た。Further details will be described below. The so-called metamorphic layer according to the present invention improves the poor adhesion due to some cause such as a difference in thermal expansion coefficient between the desired insulating film (or layer) and the metal substrate. That is, a metamorphic layer is formed on the surface of a metal substrate by previously implanting a non-metal component such as oxygen, carbon, or nitrogen among the elements forming the insulating film on the surface of the metal substrate in the form of ions. It has been found that, by subjecting this to a predetermined insulating double film forming treatment, extremely good adhesion can be obtained as compared with the case where the metamorphic layer is lacking.
本発明によればかかる変成層を構成する元素としては酸
素(O)窒素(N)及び炭素(C)の少くとも一種であれば優れ
た結果が得られ、対応する高熱伝導性絶縁被膜には、こ
れらの元素を含む、高熱伝導性物質例へばAl2O3，BeO，
AlN，SiCなどの少くとも１種が適していることが判明し
た。また膜の形成法及び複数種の組合せに関しては適宜
プロセスを選択し任意の組合せが可能である。According to the present invention, excellent results are obtained as long as at least one of oxygen (O) nitrogen (N) and carbon (C) is contained as an element constituting such a metamorphic layer, and a corresponding high thermal conductive insulating coating film is obtained. , High thermal conductivity material containing these elements, eg Al 2 O 3 , BeO,
It has been found that at least one kind such as AlN and SiC is suitable. Further, regarding the film forming method and the combination of plural kinds, it is possible to select an appropriate process and combine them arbitrarily.
以下本発明方法を実施例に従がい説明する。 Hereinafter, the method of the present invention will be described according to examples.
実施例１ 金属基体として30×40×１（mm）の大きさの金属Cu板に
窒素(N)のイオンインプラテーシヨンを施し、表面にＮ
含有の変成層約1000Åを形成せしめ、しかる後に該表面
にプラズマスパツター法によりAlN膜を約１０μ形成
し、熱伝導率、絶縁抵抗密着性を調べた。その結果、そ
れぞれ270Ｗ／mK，1015Ωcmの特性及び良好な密着性が
得られた。なお密着性は顕微下で絶縁層の密着性を定性
的に判定したものである。この結果、半導体用基板とし
て、十分使用可能な良好なる特性が確認された。Example 1 Nitrogen (N) ion implantation was applied to a metal Cu plate having a size of 30 × 40 × 1 (mm) as a metal substrate, and N was applied to the surface.
A metamorphic layer containing about 1000 Å was formed, and then an AlN film of about 10 μm was formed on the surface by the plasma sputtering method, and thermal conductivity and insulation resistance adhesion were examined. As a result, the characteristics of 270 W / mK and 10 15 Ωcm and good adhesion were obtained. The adhesiveness is a qualitative determination of the adhesiveness of the insulating layer under a microscope. As a result, it was confirmed that the semiconductor substrate has good characteristics that can be sufficiently used.
なお他の実施例（２〜６）については比較例を含めて第
１表に示す。The other examples (2 to 6) are shown in Table 1 including the comparative examples.
〔発明の効果〕 以上の如く本発明方法に係る、変成層の形成により高熱
伝導性被覆の保持、密着性を著しく改善し、かつ、工業
的にも通常のプロセス、手法を採用している事から、充
分経済的なものであり、高熱伝導性複合回路基板として
実用性の高いものが得られる。 [Advantages of the Invention] As described above, according to the method of the present invention, the formation of the metamorphic layer significantly improves the retention and adhesion of the high thermal conductive coating, and employs industrially ordinary processes and methods. Therefore, it is sufficiently economical to obtain a highly practical composite circuit board having high thermal conductivity.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 高野 武士 神奈川県川崎市幸区小向東芝町１ 東京芝 浦電気株式会社総合研究所内 (56)参考文献 特開 昭55−100974（ＪＰ，Ａ) 特開 昭58−181863（ＪＰ，Ａ) 特開 昭58−197263（ＪＰ，Ａ) ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Takeshi Takano 1 Komukai Toshiba-cho, Sachi-ku, Kawasaki-shi, Kanagawa Tokyo Shibaura Electric Co., Ltd. (56) References JP-A-55-100974 (JP, A) JP-A-58-181863 (JP, A) JP-A-58-197263 (JP, A)
Claims (2)
る金属基体表面に、酸素、炭素、窒素イオンの少なくと
も１種を注入し前記基体表面に変成層を形成する第１の
工程と、前記変成層上に酸素、炭素、窒素イオンの少な
くとも１種を含有する高熱伝導性絶縁性被膜を形成する
第２の工程とを具備した事を特徴とする高熱伝導性複合
回路基板の製造方法。1. A first step of injecting at least one of oxygen, carbon and nitrogen ions into a surface of a metal substrate made of copper (Cu) and aluminum (Al) to form a metamorphic layer on the surface of the substrate, A second step of forming a high thermal conductive insulating film containing at least one of oxygen, carbon and nitrogen ions on the metamorphic layer, the method for producing a high thermal conductive composite circuit board.
Ｃ、ＡｌＮ、ＢｅＯの少なくとも１種からなる事を特徴
とする特許請求の範囲第１項記載の高熱伝導性複合回路
基板の製造方法。2. The high thermal conductive insulating coating is Al 2 O 3 , Si
The method for producing a highly heat-conductive composite circuit board according to claim 1, characterized in that it comprises at least one of C, AlN, and BeO.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58235070A JPH0621353B2 (en) | 1983-12-15 | 1983-12-15 | High thermal conductivity composite circuit board manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58235070A JPH0621353B2 (en) | 1983-12-15 | 1983-12-15 | High thermal conductivity composite circuit board manufacturing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60128262A JPS60128262A (en) | 1985-07-09 |
| JPH0621353B2 true JPH0621353B2 (en) | 1994-03-23 |
Family
ID=16980617
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58235070A Expired - Lifetime JPH0621353B2 (en) | 1983-12-15 | 1983-12-15 | High thermal conductivity composite circuit board manufacturing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0621353B2 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0633456B2 (en) * | 1986-05-01 | 1994-05-02 | 日本軽金属株式会社 | Method for producing aluminum material having crystalline aluminum nitride layer |
| JPS637365A (en) * | 1986-06-28 | 1988-01-13 | Pentel Kk | External part for ornamentation and production thereof |
| JPH0676659B2 (en) * | 1987-03-09 | 1994-09-28 | 日本軽金属株式会社 | Method for producing aluminum material having crystalline aluminum oxide metamorphic layer |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55100974A (en) * | 1979-01-23 | 1980-08-01 | Citizen Watch Co Ltd | Parts for formation of film |
| JPS58181863A (en) * | 1982-04-14 | 1983-10-24 | Sumitomo Electric Ind Ltd | Surface treatment method |
| JPS58197263A (en) * | 1982-05-11 | 1983-11-16 | Sumitomo Electric Ind Ltd | Superhard drill of very small diameter |
-
1983
- 1983-12-15 JP JP58235070A patent/JPH0621353B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60128262A (en) | 1985-07-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4875284A (en) | Process for producing a package for packing semiconductor devices | |
| US4899206A (en) | Semiconductor device | |
| JP3079851B2 (en) | Method for manufacturing silicon carbide electronic device | |
| KR940001647B1 (en) | Improved aluminum(al) metallization for semiconductor device | |
| JPH0621353B2 (en) | High thermal conductivity composite circuit board manufacturing method | |
| EP0113088B1 (en) | Substrate for mounting semiconductor element | |
| JP3308883B2 (en) | Board | |
| KR940010240A (en) | Method for manufacturing conductive layer with maximum surface area | |
| US4719443A (en) | Low capacitance power resistor using beryllia dielectric heat sink layer and low toxicity method for its manufacture | |
| US5250327A (en) | Composite substrate and process for producing the same | |
| US4382977A (en) | Method of producing smooth metallic layers on a substrate | |
| JPH0754834B2 (en) | Method for manufacturing diamond film semiconductor substrate | |
| JPS61183433A (en) | Thin film of aluminum alloy and its production | |
| JPH029457B2 (en) | ||
| JP2992524B2 (en) | Semiconductor element wiring forming method | |
| JP3112460B2 (en) | Manufacturing method of aluminum nitride substrate | |
| JPS59140076A (en) | Thermal head | |
| JP3265289B2 (en) | Manufacturing method of aluminum nitride substrate | |
| JP2512898B2 (en) | Insulating substrate and manufacturing method thereof | |
| JP3190908B2 (en) | Aluminum nitride substrate | |
| JPS635548A (en) | Heat-conductive insulating substrate for semiconductor element | |
| JPS6339105B2 (en) | ||
| JPH05299798A (en) | Electronic circuit wiring board | |
| JPH0645716A (en) | Heat conductive substrate | |
| JPS6410097B2 (en) |