JPH06197279A - 赤外線検出器配列の読み出しシステムおよび工程 - Google Patents

赤外線検出器配列の読み出しシステムおよび工程

Info

Publication number
JPH06197279A
JPH06197279A JP4256846A JP25684692A JPH06197279A JP H06197279 A JPH06197279 A JP H06197279A JP 4256846 A JP4256846 A JP 4256846A JP 25684692 A JP25684692 A JP 25684692A JP H06197279 A JPH06197279 A JP H06197279A
Authority
JP
Japan
Prior art keywords
radiation
voltage
terminal
detector
resistance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4256846A
Other languages
English (en)
Japanese (ja)
Inventor
William F Keenan
エフ．キーナン ウイリアム
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of JPH06197279A publication Critical patent/JPH06197279A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
    • G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/20—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming only infrared radiation into image signals
    • H04N25/21—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming only infrared radiation into image signals for transforming thermal infrared radiation into image signals
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/67—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response
    • H04N25/671—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response for non-uniformity detection or correction
    • H04N25/673—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response for non-uniformity detection or correction by using reference sources
    • H04N25/674—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response for non-uniformity detection or correction by using reference sources based on the scene itself, e.g. defocusing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/191—Photoconductor image sensors
    • H10F39/193—Infrared image sensors
    • H10F39/1935—Infrared image sensors of the hybrid type

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Radiation Pyrometers (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
JP4256846A 1991-09-27 1992-09-25 赤外線検出器配列の読み出しシステムおよび工程 Pending JPH06197279A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US766879 1991-09-27
US07/766,879 US5196703A (en) 1991-09-27 1991-09-27 Readout system and process for IR detector arrays

Publications (1)

Publication Number Publication Date
JPH06197279A true JPH06197279A (ja) 1994-07-15

Family

ID=25077806

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4256846A Pending JPH06197279A (ja) 1991-09-27 1992-09-25 赤外線検出器配列の読み出しシステムおよび工程

Country Status (4)

Country Link
US (1) US5196703A (enExample)
JP (1) JPH06197279A (enExample)
KR (1) KR100265672B1 (enExample)
TW (1) TW279273B (enExample)

Families Citing this family (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5486698A (en) * 1994-04-19 1996-01-23 Texas Instruments Incorporated Thermal imaging system with integrated thermal chopper
US5457318A (en) * 1994-04-29 1995-10-10 Texas Instruments Incorporated Thermal detector apparatus and method using reduced thermal capacity
US5424544A (en) * 1994-04-29 1995-06-13 Texas Instruments Incorporated Inter-pixel thermal isolation for hybrid thermal detectors
US5426303A (en) * 1994-04-29 1995-06-20 Texas Instruments Incorporated Thermal isolation structure for hybrid thermal detectors
US5478242A (en) * 1994-04-29 1995-12-26 Texas Instruments Incorporated Thermal isolation of hybrid thermal detectors through an anisotropic etch
US5574282A (en) * 1994-06-30 1996-11-12 Texas Instruments Incorporated Thermal isolation for hybrid thermal detectors
US5653851A (en) * 1994-07-05 1997-08-05 Texas Instruments Incorporated Method and apparatus for etching titanate with organic acid reagents
US5512748A (en) * 1994-07-26 1996-04-30 Texas Instruments Incorporated Thermal imaging system with a monolithic focal plane array and method
JP2710228B2 (ja) * 1994-08-11 1998-02-10 日本電気株式会社 ボロメータ型赤外線検知素子、その駆動方法、および検出用積分回路
US5489776A (en) * 1994-08-30 1996-02-06 Hughes Aircraft Company Microbolometer unit cell signal processing circuit
US5532484A (en) * 1994-09-09 1996-07-02 Texas Instruments Incorporated Defective pixel signal substitution in thermal imaging systems
US5559332A (en) * 1994-11-04 1996-09-24 Texas Instruments Incorporated Thermal detector and method
US5602043A (en) * 1995-01-03 1997-02-11 Texas Instruments Incorporated Monolithic thermal detector with pyroelectric film and method
US5644838A (en) * 1995-01-03 1997-07-08 Texas Instruments Incorporated Method of fabricating a focal plane array for hybrid thermal imaging system
US5746930A (en) * 1995-01-03 1998-05-05 Texas Instruments Incorporated Method and structure for forming an array of thermal sensors
US5626773A (en) * 1995-01-03 1997-05-06 Texas Instruments Incorporated Structure and method including dry etching techniques for forming an array of thermal sensitive elements
US5603848A (en) * 1995-01-03 1997-02-18 Texas Instruments Incorporated Method for etching through a substrate to an attached coating
US5708269A (en) * 1995-08-15 1998-01-13 Raytheon Ti Systems, Inc. Thermal detector and method
US5796514A (en) * 1996-03-04 1998-08-18 Raytheon Ti Systems, Inc. Infrared zoom lens assembly having a variable F/number
US6249374B1 (en) 1996-03-04 2001-06-19 Raytheon Company Wide field of view infrared zoom lens assembly having a constant F/number
US6018414A (en) * 1996-03-04 2000-01-25 Raytheon Company Dual band infrared lens assembly using diffractive optics
US5852516A (en) * 1996-03-04 1998-12-22 Raytheon Ti Systems, Inc. Dual purpose infrared lens assembly using diffractive optics
JP3303786B2 (ja) 1998-08-13 2002-07-22 日本電気株式会社 ボロメータ型赤外線センサ
US6267501B1 (en) 1999-03-05 2001-07-31 Raytheon Company Ambient temperature micro-bolometer control, calibration, and operation
US6683310B2 (en) 2001-06-18 2004-01-27 Honeywell International Inc. Readout technique for microbolometer array
JP3944465B2 (ja) 2003-04-11 2007-07-11 三菱電機株式会社 熱型赤外線検出器及び赤外線フォーカルプレーンアレイ
US7462831B2 (en) * 2006-01-26 2008-12-09 L-3 Communications Corporation Systems and methods for bonding
US7459686B2 (en) * 2006-01-26 2008-12-02 L-3 Communications Corporation Systems and methods for integrating focal plane arrays
US7655909B2 (en) * 2006-01-26 2010-02-02 L-3 Communications Corporation Infrared detector elements and methods of forming same
US7718965B1 (en) 2006-08-03 2010-05-18 L-3 Communications Corporation Microbolometer infrared detector elements and methods for forming same
US8153980B1 (en) 2006-11-30 2012-04-10 L-3 Communications Corp. Color correction for radiation detectors
JP4482599B2 (ja) * 2008-10-24 2010-06-16 本田技研工業株式会社 車両の周辺監視装置
US8330820B2 (en) * 2008-12-05 2012-12-11 Bae Systems Information And Electronic Systems Integration Inc. Fast electrostatic shutter and method of achieving offset compensation in infrared video imagers using fast shutters
IL201915A0 (en) * 2009-11-04 2010-11-30 Lior Segal Warm body presence portable detection device and method
US8765514B1 (en) 2010-11-12 2014-07-01 L-3 Communications Corp. Transitioned film growth for conductive semiconductor materials
US11528442B2 (en) 2019-12-23 2022-12-13 Sivananthan Laboratories, Inc. Adjacent electrode which provides pixel delineation for monolithic integration of a colloidal quantum dot photodetector film with a readout integrated circuit
US11670616B2 (en) 2020-06-22 2023-06-06 Epir, Inc. Modified direct bond interconnect for FPAs
US11781914B2 (en) 2021-03-04 2023-10-10 Sivananthan Laboratories, Inc. Computational radiation tolerance for high quality infrared focal plane arrays
US12532085B2 (en) 2021-05-07 2026-01-20 Sivananthan Laboratories, Inc. Computational high-speed hyperspectral infrared camera system

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3827465A1 (de) * 1988-08-12 1990-02-15 Steinheil Optronik Gmbh Verstaerker fuer infrarotdetektoren

Also Published As

Publication number Publication date
KR930006814A (ko) 1993-04-21
US5196703A (en) 1993-03-23
KR100265672B1 (ko) 2000-09-15
TW279273B (enExample) 1996-06-21

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