JPH06188329A - Package for semiconductor device - Google Patents

Abstract

PURPOSE:To obtain a package, for a semiconductor device, wherein it can diffuse heat generated from a semiconductor chip with good efficiency and it is provided with a lightweight heat sink. CONSTITUTION:A heat sink 30 is formed of a ceramic body 32 whose specific gravity is small. Through holes 34 are opened in the ceramic body 32, and a brazing material 40 such as silver solder, copper solder or the like is filled into the through holes 34. Heat generated form a semiconductor chip 60 can be diffused with good efficiency to the outside of the heat sink 30 composed of the ceramic body 32 via the brazing material 40 filled into the through holes 34 in the ceramic body 32.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device package provided with a heat sink for dissipating heat generated by a semiconductor chip.

[0002]

2. Description of the Related Art In a package made of ceramic or the like, for example, as shown in FIG. 6, a highly heat conductive copper-tungsten alloy or a copper layer, a molybdenum layer and a copper layer are sequentially laminated on the bottom of the package body 10. A heat sink 30 made of a clad material or the like formed as described above is provided. Then, the semiconductor chip 60 housed in the cavity 20 of the package body is mounted on the heat sink 30 so that the heat generated by the semiconductor chip 60 can be efficiently dissipated to the outside of the package through the heat sink 30.

[0003]

However, the specific gravity of the copper-tungsten alloy or the clad material is extremely large, and when the heat sink 30 made of the copper-tungsten alloy or the clad material is joined to the bottom of the package body 10. However, the weight of the package becomes large, and it cannot be applied to a package for electronic equipment which is required to be lightweight recently. This tendency was remarkable in the recent large-sized package that accommodates the highly integrated large-sized semiconductor chip 60.

Conventionally, as shown in FIG. 7, a ceramic body 32 having a low specific gravity is provided on the bottom of the package body 10.
A plurality of vias 36 made of metallized metal are provided in a lattice shape, and the upper and lower ends of the vias 36 are connected to the metallized layers 50 provided on the upper and lower surfaces of the ceramic body 32, respectively. A package with 30 is known.

In this package, the semiconductor chip 60 housed in the cavity 20 of the package body is mounted on a heat sink 30 composed of a ceramic body 32, and the heat generated by the semiconductor chip 60 is passed through a via 36 provided in the ceramic body 32 to form a ceramic. It can be dissipated to the outside of the heat sink 30 consisting of the body 32.

However, in this package, the thermal conductivity of the via 36 made of metallization is not so good, and the heat generated by the semiconductor chip 60 can be efficiently dissipated to the outside of the heat sink 30 made of the ceramic body 32 through the via 36. However, the temperature of the semiconductor chip 60 housed in the package becomes high and the semiconductor chip 60 malfunctions or malfunctions. This tendency was remarkable in a large package that accommodates a highly integrated semiconductor chip 60 that emits high heat.

It is an object of the present invention to provide a semiconductor device package (hereinafter referred to as a package) having a lightweight heat sink capable of efficiently dissipating heat generated by a semiconductor chip, which solves the above problems. I am trying.

[0008]

In order to achieve the above object, the package of the present invention is a semiconductor device package including a heat sink for radiating heat generated by a semiconductor chip, wherein the heat sink has a through hole in a ceramic body. It is characterized in that it is made by opening and filling the through hole with a brazing material.

[0009]

The thermal conductivity of metallization such as tungsten metallization is 163 W / mK, and the thermal conductivity of brazing material such as silver solder is 366 W / mK. That is, the thermal conductivity of the brazing material is about 2.2 compared to the thermal conductivity of the metallization.
~ 2.3 times higher.

In the package having the above-mentioned structure, a heat sink in which a through hole is opened in a ceramic body and the through hole is filled with a brazing material is used. Therefore, the heat generated by the semiconductor chip can be efficiently dissipated to the outside of the heat sink made of the ceramic body through the brazing material having high thermal conductivity filled in the through holes of the ceramic body.

The specific gravity of a copper-tungsten alloy having a composition of 10% by weight of copper and the balance of tungsten is 17.0,
The specific gravity of the clad material formed by sequentially stacking the copper layer, the molybdenum layer, and the copper layer is 9.3, and the specific gravity of the ceramic is 3.6. That is, the specific gravity of the ceramic is smaller than the specific gravity of the clad material formed by sequentially stacking the copper-tungsten alloy or the copper layer, the molybdenum layer, and the copper layer.

In the package having the above structure, the heat sink is formed of a ceramic body having a low specific gravity. Therefore, the weight of the heat sink can be reduced.

[0013]

Embodiments of the present invention will now be described with reference to the drawings. 1 to 3 show a preferred embodiment of the package of the present invention, FIG. 1 or 2 is a front sectional view thereof, and FIG. 3 is a partially enlarged sectional view thereof. The package is described below.

In the package of FIG. 1 or 2, the cavity 2 opened in the package body 10 made of ceramics.
A heat sink 30 is provided at the bottom of the cavity 20, and the bottom surface of the cavity 20 is sealed by the heat sink 30.

The heat sink 30 has a ceramic body 32.
In addition, a large number of small-sized through holes 34 are opened in a grid pattern, and the through holes 34 are filled with a brazing material 40 such as silver braze or copper braze. The heat sink 30 is shown in FIG.
It is configured as shown in. That is, the ceramic body 32
A metallized layer 50 is continuously provided without gaps on the inner peripheral surface of the through hole 34 opened to the upper surface and the upper and lower surfaces of the ceramic body 32 continuous with the through hole 34. The metallized layer 50 is plated with nickel such as nickel that easily wets the brazing material. The through hole 34 is filled with a brazing material 40 such as silver brazing material or copper brazing material without any gap, and the periphery of the brazing material 40 is hermetically bonded to the plated metallized layer 50 provided on the inner peripheral surface of the through hole 34. ing. The airtightness of the ceramic body 32 having the through holes 34 is maintained.

In addition, in the package of FIG. 1, a heat sink 30 made of a ceramic body 32 is used as the package body 1.
The heat sink 30 is integrally fired at the same time as 0, and the heat sink 30 is joined to the bottom surface of the package body 10. Specifically, the through hole 34 is opened in the ceramic green sheet for firing the ceramic body 32. Next, a metallization paste for firing the metallization layer 50 is applied in layers on the inner peripheral surface of the through hole 34 and the upper and lower surfaces of the ceramic green sheet continuous with the inner peripheral surface. Next, a ceramic green sheet for firing the package body 10 is laminated on the upper surface of the ceramic green sheet, and they are placed at about 1500 ° C.
The ceramic body 32 is bonded to the bottom surface of the package body 10 by placing it in a high temperature furnace etc. Next, the metallized layer 50 formed on the ceramic body 32 is plated with nickel or the like. Next, with the through hole 34 of the ceramic body filled with the brazing material 40, the ceramic body 32 and the package body 10 are set to 800 to 900.
The brazing filler metal 40 filled in the through hole 34 is hermetically bonded to the metallized layer 50 formed on the inner peripheral surface of the through hole 34 by placing the brazing filler metal 40 in a high temperature furnace at a temperature of ℃. Then, the bottom surface of the cavity 20 opened in the package body 10 is sealed with a heat sink 30.

On the other hand, in the package of FIG. 2, the heat sink 30 made of the ceramic body 32 is used as the package body 10.
And the heat sink 30 is brazed to the bottom surface of the package body 10. Specifically, the through hole 34 is opened in the ceramic green sheet for firing the ceramic body 32. Next, a metallization paste for firing the metallization layer 50 is applied in layers on the inner peripheral surface of the through hole 34 and the upper and lower surfaces of the ceramic green sheet continuous with the inner peripheral surface. Then, the ceramic green sheet is put in a high temperature furnace or the like at about 1500 ° C. and fired to form a ceramic body 32. Next, the metallized layer 50 formed on the ceramic body 32 is plated with nickel or the like. Next, with the through hole 34 of the ceramic body filled with the brazing material 40,
800 for both the ceramic body 32 and the package body 10
The metallization layer 50 formed in the upper surface of the ceramic body 32 is hermetically bonded to the metallization layer 50 formed on the inner peripheral surface of the through hole 34 by being placed in a high temperature furnace of up to 900 ° C. The layer 50 is brazed to the metallized layer 12 formed on the bottom surface of the package body 10. Then, the bottom surface of the cavity 20 opened in the package body 10 is sealed with a heat sink 30 made of a ceramic body 32.

The package shown in FIG. 1 or FIG. 2 and FIG. 3 is configured as described above, and in this package,
The brazing material 4 that fills the through holes 34 of the ceramic body 32 with the heat generated by the semiconductor chip 60 mounted in the cavity 20 of the package body and mounted on the heat sink 30.
Heatsink 30 consisting of ceramic body 32 through
It is designed so that it can be efficiently diffused to the outside.

FIG. 4 or 5 shows another preferred embodiment of the package of the present invention, more specifically, a front sectional view thereof. The package is described below.

In the illustrated package, the heat sink 30
In addition, one or a plurality (a plurality of in the figure) of large-diameter through holes 340 are opened in the center of the ceramic body 32 corresponding to the position where the semiconductor chip 60 is mounted, and silver through, copper braze, etc. are formed in the through holes 340. A brazing material 40 filled without any gap is used. The heat generated by the semiconductor chip 60 mounted on the heat sink 30 is filled in the through hole 340 in the center of the ceramic body 32, which is the brazing material 4
Heatsink 30 consisting of ceramic body 32 through
It is designed so that it can be efficiently diffused to the outside.

The other structure and the operation thereof are the same as those shown in FIG.
Alternatively, the package is the same as that shown in FIGS. 2 and 3, and the same members are denoted by the same reference numerals and the description thereof will be omitted.

In the package shown in FIG. 4 or 5, a through hole (not shown) having a small diameter or the like is opened in the ceramic body 32 portion other than the place where the semiconductor chip 60 is mounted, and the through hole is formed. The heat conductivity of the heat sink 30 made of the ceramic body 32 may be enhanced by filling it with a brazing material. The heat generated by the semiconductor chip 60 may be efficiently dissipated to the outside of the heat sink 30 made of the ceramic body 32 through the heat sink 30 having the improved thermal conductivity.

[0023]

As described above, according to the package of the present invention, the heat generated by the semiconductor chip is transferred to the outside of the heat sink composed of the ceramic body through the brazing material having high thermal conductivity filled in the through holes of the ceramic body. Can be efficiently dissipated.

At the same time, by forming the heat sink with a ceramic body having a low specific gravity, the weight of the heat sink can be reduced, and the weight of the package can be reduced.

[Brief description of drawings]

FIG. 1 is a front sectional view of a package of the present invention.

FIG. 2 is a front sectional view of a package of the present invention.

FIG. 3 is a partially enlarged cross-sectional view of the package of the present invention.

FIG. 4 is a front sectional view of the package of the present invention.

FIG. 5 is a front sectional view of the package of the present invention.

FIG. 6 is a front sectional view of a conventional package.

FIG. 7 is a front sectional view of a conventional package.

[Description of Reference Signs] 10 Package Body 12 Metallization Layer 20 Cavity 30 Heat Sink 32 Ceramic Body 34, 340 Through Hole 36 Via 40 Brazing Material 50 Metallization Layer 60 Semiconductor Chip

[Procedure amendment]

[Submission date] March 22, 1993

[Procedure Amendment 1]

[Document name to be corrected] Drawing

[Name of item to be corrected] Figure 2

[Correction method] Change

[Correction content]

[Fig. 2]

Claims (1)

[Claims] 1. A semiconductor device package comprising a heat sink for dissipating heat generated by a semiconductor chip,
A package for a semiconductor device, wherein the heat sink is formed by forming a through hole in a ceramic body and filling the through hole with a brazing material.