JPH06186082A - Infrared sensor device - Google Patents
Infrared sensor deviceInfo
- Publication number
- JPH06186082A JPH06186082A JP4341909A JP34190992A JPH06186082A JP H06186082 A JPH06186082 A JP H06186082A JP 4341909 A JP4341909 A JP 4341909A JP 34190992 A JP34190992 A JP 34190992A JP H06186082 A JPH06186082 A JP H06186082A
- Authority
- JP
- Japan
- Prior art keywords
- pyroelectric
- infrared
- light
- infrared sensor
- wiring pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Radiation Pyrometers (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】この発明は、赤外線センサ装置に
関し、さらに詳しくは、組立時の作業性を向上すると共
に歩留りを向上した赤外線センサ装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an infrared sensor device, and more particularly to an infrared sensor device having improved workability during assembly and improved yield.
【０００２】[0002]
【従来の技術】図５は、従来の赤外線センサ装置の一例
を示す説明図である。この赤外線センサ装置５００は、
赤外線アレイセンサ５０１と回路基板５０２とからなっ
ている。図６に示すように、赤外線アレイセンサ５０１
は、一枚の焦電材基板５０６に、複数の焦電素子５０３
を配置形成したものである。各焦電素子５０３は、焦電
材基板５０６の受光面と反受光面とに対電極５０４，５
０５を対向させてそれぞれ設置し，垂直分極させること
により形成されている。なお、各焦電素子５０３の大き
さは、例えば１ｍｍ×１ｍｍである。また、焦電材基板
５０６は例えばＰbＴiＯ3 などのセラミックス製であ
り、厚さは例えば１００μｍ以下である。図５に戻り、
回路基板５０２の受光側面には、配線パタン５０７が形
成されている。なお、回路基板部５０２は、例えばガラ
スエポキシ製である。2. Description of the Related Art FIG. 5 is an explanatory diagram showing an example of a conventional infrared sensor device. This infrared sensor device 500 is
It is composed of an infrared array sensor 501 and a circuit board 502. As shown in FIG. 6, the infrared array sensor 501
Includes a plurality of pyroelectric elements 503 on one pyroelectric material substrate 506.
Are arranged and formed. Each of the pyroelectric elements 503 has counter electrodes 504, 5 on the light receiving surface and the anti-light receiving surface of the pyroelectric material substrate 506.
No. 05 is placed facing each other and vertically polarized. The size of each pyroelectric element 503 is, for example, 1 mm × 1 mm. The pyroelectric material substrate 506 is made of ceramics such as PbTiO 3 and has a thickness of 100 μm or less, for example. Returning to FIG.
A wiring pattern 507 is formed on the light receiving side surface of the circuit board 502. The circuit board portion 502 is made of glass epoxy, for example.
【０００３】赤外線センサ装置５００の組立てに際して
は、配線パタン５０７が各焦電素子５０３の反受光面の
電極５０５に接続されるように、赤外線アレイセンサ５
０１を回路基板５０２の受光側面に貼着する。そして、
各焦電素子５０３の受光面の電極５０４と回路基板５０
２の配線パタン５０７とをリード線５０８を用いて接続
する。When assembling the infrared sensor device 500, the infrared array sensor 5 is arranged so that the wiring pattern 507 is connected to the electrode 505 on the opposite light receiving surface of each pyroelectric element 503.
01 is attached to the light-receiving side surface of the circuit board 502. And
The electrodes 504 on the light-receiving surface of each pyroelectric element 503 and the circuit board 50.
The second wiring pattern 507 is connected using a lead wire 508.
【０００４】図７は、従来の赤外線アレイセンサの他の
例を示す斜視図である。この赤外線アレイセンサ７０１
は、一枚の焦電材基板７０６に、複数の焦電素子７０３
を配置形成すると共に、焦電材基板７０６の受光面に格
子状の溝７０９を刻設して各焦電素子７０３間を熱的に
遮断したものである。各焦電素子７０３は、焦電材基板
７０６の受光面と反受光面とに対電極５０４，５０５を
対向させてそれぞれ設置し，垂直分極させることにより
形成されている。なお、各焦電素子７０３の大きさは、
例えば１ｍｍ×１ｍｍである。また、焦電材基板７０６
は例えばＰbＴiＯ3 などのセラミックス製であり、その
厚さは例えば１００μｍ以下である。また、溝７０９の
深さは例えば５０μｍ以下である。この赤外線アレイセ
ンサ７０１を、図６の赤外線アレイセンサ５０１の代わ
りに用いると、溝７０９により各焦電素子７０３間が熱
的に遮断されているため、クロストークが少なくなる。FIG. 7 is a perspective view showing another example of a conventional infrared array sensor. This infrared array sensor 701
Includes a plurality of pyroelectric elements 703 on one pyroelectric material substrate 706.
And the grid-shaped grooves 709 are engraved on the light receiving surface of the pyroelectric material substrate 706 to thermally isolate the pyroelectric elements 703. Each pyroelectric element 703 is formed by installing counter electrodes 504 and 505 on the light-receiving surface and the anti-light-receiving surface of the pyroelectric material substrate 706 so as to face each other and vertically polarizing the electrodes. The size of each pyroelectric element 703 is
For example, it is 1 mm × 1 mm. In addition, the pyroelectric material substrate 706
Is made of ceramics such as PbTiO 3 and has a thickness of, for example, 100 μm or less. The depth of the groove 709 is, for example, 50 μm or less. When this infrared array sensor 701 is used in place of the infrared array sensor 501 of FIG. 6, the crosstalk is reduced because the pyroelectric elements 703 are thermally blocked by the grooves 709.
【０００５】[0005]
【発明が解決しようとする課題】上記従来の赤外線セン
サ装置５００では、組立てに際して、各焦電素子５０３
の受光面の電極５０４と回路基板５０２の配線パタン５
０７とをリード線５０８を用いて接続する必要があり、
作業性が悪い問題点がある。また、複数の焦電素子７０
３間を熱的に遮断する溝７０９を刻設する際に、焦電材
基板７０６が割れ易く、歩留りが悪くなる問題点があ
る。そこで、この発明の目的は、組立時の作業性を向上
すると共に歩留りを向上した赤外線センサ装置を提供す
ることにある。In the above-mentioned conventional infrared sensor device 500, each pyroelectric element 503 is assembled at the time of assembly.
Electrode 504 of the light receiving surface of the wiring and the wiring pattern 5 of the circuit board 502.
It is necessary to connect with 07 using the lead wire 508,
There is a problem that workability is poor. In addition, a plurality of pyroelectric elements 70
There is a problem that the pyroelectric material substrate 706 is easily cracked when engraving the groove 709 that thermally cuts off between the three, and the yield is deteriorated. Therefore, an object of the present invention is to provide an infrared sensor device which improves workability during assembly and improves yield.
【０００６】[0006]
【課題を解決するための手段】第１の観点では、この発
明は、一枚の焦電材基板に複数の焦電素子を配置形成し
且つ各焦電素子の外部に配線すべき電極を焦電材基板の
受光面に並べて近接して設置した赤外線アレイセンサ
と、前記各焦電素子に対応する複数の窓を穿設し且つ各
窓を仕切る格子部分の反受光側面に配線パタンを形成し
た回路基板とを具備してなり、赤外線が前記各窓を通過
して各焦電素子に当たるように且つ前記電極が前記配線
パタンに接続するように前記回路基板の反受光側面に前
記赤外線アレイセンサを貼着したことを特徴とする赤外
線センサ装置を提供する。According to a first aspect of the present invention, a plurality of pyroelectric elements are arranged and formed on a single pyroelectric material substrate, and electrodes to be wired outside each pyroelectric element are pyroelectric materials. An infrared array sensor arranged side by side on the light-receiving surface of the substrate and a circuit board having a plurality of windows corresponding to the pyroelectric elements and a wiring pattern formed on the anti-light-receiving side surface of a lattice part partitioning the windows. The infrared array sensor is attached to an anti-light-receiving side surface of the circuit board so that infrared rays pass through the windows and hit the pyroelectric elements and the electrodes are connected to the wiring pattern. An infrared sensor device characterized by the above is provided.
【０００７】第２の観点では、この発明は、焦電素子の
外部に配線すべき電極を焦電材基板の受光面に並べて近
接して設置した赤外線センサと、前記焦電素子に対応す
る窓を穿設し且つ窓の周辺部分の反受光側面に配線パタ
ンを形成した回路基板とを具備してなり、赤外線が前記
窓を通過して焦電素子に当たるように且つ前記電極が前
記配線パタンに接続するように前記回路基板の反受光側
面に前記赤外線センサを貼着したことを特徴とする赤外
線センサ装置を提供する。In a second aspect, the present invention provides an infrared sensor in which electrodes to be wired outside the pyroelectric element are arranged in close proximity to the light receiving surface of the pyroelectric material substrate and a window corresponding to the pyroelectric element. A circuit board having a wiring pattern formed on the anti-light-receiving side surface of the peripheral portion of the window, the infrared ray passing through the window and hitting the pyroelectric element, and the electrode is connected to the wiring pattern. As described above, there is provided an infrared sensor device characterized in that the infrared sensor is attached to an anti-light-receiving side surface of the circuit board.
【０００８】[0008]
【作用】この発明の赤外線センサ装置では、焦電素子の
外部に配線すべき電極を焦電材基板の受光面に並べて近
接して設置した赤外線アレイセンサまたは赤外線センサ
を用いる。また、前記焦電素子に対応する窓を穿設し且
つ窓の格子部分および／または周辺部分の反受光側面に
配線パタンを形成した回路基板を用いる。そして、赤外
線が前記窓を通過して焦電素子に当たるように且つ前記
電極が前記配線パタンに接続するように、前記回路基板
の反受光側面に、前記赤外線アレイセンサまたは赤外線
センサを貼着する。このような構造であるため、リード
線による配線が不要となり、組立時の作業性を向上でき
る。In the infrared sensor device of the present invention, an infrared array sensor or an infrared sensor in which electrodes to be wired outside the pyroelectric element are arranged in close proximity to the light receiving surface of the pyroelectric material substrate is used. In addition, a circuit board is used in which a window corresponding to the pyroelectric element is formed and a wiring pattern is formed on the anti-light-receiving side surface of the lattice portion and / or the peripheral portion of the window. Then, the infrared array sensor or the infrared sensor is attached to the anti-light-receiving side surface of the circuit board so that infrared rays pass through the window and strike the pyroelectric element and the electrodes are connected to the wiring pattern. With such a structure, wiring by a lead wire is unnecessary, and workability during assembly can be improved.
【０００９】また、この発明の赤外線センサ装置では、
複数の焦電素子に対応する窓の格子が、各焦電素子間を
熱的に遮断する。このため、クロストークが少なく、溝
を刻設しなくてもよいため、焦電材基板の割れが発生せ
ず、歩留りを向上できる。Further, in the infrared sensor device of the present invention,
A grid of windows corresponding to the plurality of pyroelectric elements provides thermal isolation between the pyroelectric elements. Therefore, crosstalk is small and it is not necessary to form a groove, so that the pyroelectric material substrate is not cracked and the yield can be improved.
【００１０】[0010]
【実施例】以下、図に示す実施例によりこの発明をさら
に説明する。なお、これによりこの発明が限定されるも
のではない。図１は、この発明の赤外線センサ装置の一
実施例を示す説明図である。この赤外線センサ装置１０
０は、赤外線アレイセンサ１と回路基板２とからなって
いる。図２に示すように、赤外線アレイセンサ１は、一
枚の焦電材基板６に、複数の焦電素子３を配置形成した
ものである。各焦電素子３は、焦電材基板６の受光面
に、くし形の対電極４，５を噛み合わせるように近接し
て並べてそれぞれ設置し，水平分極させることにより形
成されている。なお、各焦電素子１の大きさは、例えば
１ｍｍ×１ｍｍである。焦電材基板６は例えばＰbＴiＯ
3 などのセラミックス製であり、厚さは例えば１５０μ
ｍである。垂直分極の場合には、焦電特性上、焦電材基
板の厚さを１００μｍ以下にする必要があるが、この焦
電素子３は水平分極であるため、焦電材基板６の厚さを
１５０μｍ以上にしても、焦電特性上、支障を生じな
い。The present invention will be further described below with reference to the embodiments shown in the drawings. The present invention is not limited to this. FIG. 1 is an explanatory view showing an embodiment of the infrared sensor device of the present invention. This infrared sensor device 10
Reference numeral 0 is composed of an infrared array sensor 1 and a circuit board 2. As shown in FIG. 2, the infrared array sensor 1 is formed by disposing and forming a plurality of pyroelectric elements 3 on a single pyroelectric material substrate 6. Each of the pyroelectric elements 3 is formed by horizontally arranging the pyroelectric material substrate 6 on the light receiving surface of the pyroelectric material substrate 6 so that the comb-shaped counter electrodes 4 and 5 are closely arranged so as to mesh with each other. The size of each pyroelectric element 1 is, for example, 1 mm × 1 mm. The pyroelectric material substrate 6 is, for example, PbTiO
It is made of ceramics such as 3 and has a thickness of 150μ, for example.
m. In the case of vertical polarization, the thickness of the pyroelectric material substrate needs to be 100 μm or less in view of pyroelectric characteristics, but since the pyroelectric element 3 is horizontally polarized, the thickness of the pyroelectric material substrate 6 is 150 μm or more. However, there is no problem in terms of pyroelectric characteristics.
【００１１】図１に戻り、回路基板２には、各焦電素子
３に対応する複数の窓９が穿設されている。また、各窓
９を仕切る格子１０の反受光側面には、図３に示すよう
に、配線パタン７が形成されている。なお、回路基板部
２は、例えばガラスエポキシ製である。Returning to FIG. 1, the circuit board 2 is provided with a plurality of windows 9 corresponding to the pyroelectric elements 3. Further, as shown in FIG. 3, a wiring pattern 7 is formed on the anti-light-receiving side surface of the grid 10 that partitions each window 9. The circuit board portion 2 is made of glass epoxy, for example.
【００１２】赤外線センサ装置１００の組立てに際して
は、赤外線が各窓９を通過して各焦電素子３に当たるよ
うに且つ配線パタン７が各焦電素子３の受光面の電極
４，５に接続されるように、赤外線アレイセンサ１を回
路基板２の反受光側面に貼着すればよい。When assembling the infrared sensor device 100, the wiring pattern 7 is connected to the electrodes 4 and 5 on the light-receiving surface of each pyroelectric element 3 so that infrared light passes through each window 9 and strikes each pyroelectric element 3. As described above, the infrared array sensor 1 may be attached to the anti-light-receiving side surface of the circuit board 2.
【００１３】以上の赤外線アレイセンサ１００によれ
ば、リード線による配線が不要になるから、作業性が向
上する。また、窓９の格子１０が、各焦電素子３間を熱
的に遮断するから、クロストークが少なく、溝を刻設し
なくても良好な特性が得られる。また、溝の刻設時の焦
電材基板の割れが発生せず、歩留りを向上できる。According to the above infrared array sensor 100, the workability is improved because the wiring by the lead wire is unnecessary. Further, since the lattice 10 of the window 9 thermally blocks the pyroelectric elements 3 from each other, crosstalk is small and good characteristics can be obtained without engraving grooves. Further, cracking of the pyroelectric material substrate does not occur at the time of engraving the groove, and the yield can be improved.
【００１４】なお、焦電材基板６の厚さを１５０μｍ以
上できることからも割れ難くなり、歩留りを向上でき
る。焦電材基板６の厚さを１５０μｍ以上にした場合に
は、溝を刻設しても割れ難いので、溝を刻設して各焦電
素子３間をさらに熱的に遮断すれば、さらに良好な特性
が得られる。Since the thickness of the pyroelectric material substrate 6 can be 150 μm or more, the pyroelectric material substrate 6 is less likely to be broken and the yield can be improved. When the thickness of the pyroelectric material substrate 6 is 150 μm or more, it is difficult to break even if the groove is formed. Therefore, if the groove is formed and the pyroelectric elements 3 are further thermally isolated, it is even better. Various characteristics can be obtained.
【００１５】他の実施例としては、左右に隣接する２個
の焦電素子３のうちの左側の焦電素子３の対電極５と右
側の焦電素子３の対電極４とを接続する導体パタンを焦
電材基板６の受光面に付加形成し、デュアルタイプの赤
外線アレイセンサとし、これを用いて赤外線センサ装置
を構成したものが挙げられる。また、図４に示すような
対向電極／垂直分極のデュアルタイプの赤外線アレイセ
ンサ４１を用いて赤外線センサ装置を構成したものが挙
げられる。In another embodiment, a conductor connecting the counter electrode 5 of the left pyroelectric element 3 and the counter electrode 4 of the right pyroelectric element 3 of the two adjacent pyroelectric elements 3 on the left and right. An example is a pattern in which a pattern is additionally formed on the light receiving surface of the pyroelectric material substrate 6 to form a dual type infrared array sensor, and an infrared sensor device is configured using this. In addition, an infrared sensor device may be formed by using a dual type infrared array sensor 41 of counter electrodes / vertical polarization as shown in FIG.
【００１６】さらに他の実施例としては、焦電素子３を
１個だけ形成した赤外線センサと，窓９を１個だけ形成
し且つ窓９の周辺部分の反受光側面に配線パタンを形成
した回路基板とを用いて赤外線センサ装置を構成したも
のが挙げられる。As still another embodiment, an infrared sensor having only one pyroelectric element 3 and a circuit having only one window 9 and a wiring pattern formed on the side opposite to the light receiving side of the window 9 are provided. An example of the infrared sensor device is a substrate.
【００１７】[0017]
【発明の効果】この発明の赤外線センサ装置によれば、
リード線を用いた接続が不要になるため、作業性を向上
できる。また、複数の焦電素子に対応する窓の格子が各
焦電素子間を熱的に遮断するためクロストークが少な
く、溝を刻設しなくてもよいから、焦電材基板の割れが
発生せず、歩留りを向上できる。According to the infrared sensor device of the present invention,
Workability can be improved because connection using a lead wire is not required. Further, since the window grid corresponding to a plurality of pyroelectric elements thermally blocks the pyroelectric elements from each other, crosstalk is small, and it is not necessary to engrave a groove, so that the pyroelectric material substrate is not cracked. Therefore, the yield can be improved.
【図１】この発明の赤外線センサ装置の一実施例を示す
説明図である。FIG. 1 is an explanatory view showing an embodiment of an infrared sensor device of the present invention.
【図２】図１の赤外線センサ装置に用いる赤外線アレイ
センサを示す斜視図である。FIG. 2 is a perspective view showing an infrared array sensor used in the infrared sensor device of FIG.
【図３】図１のＨ部分の拡大説明図である。FIG. 3 is an enlarged explanatory view of a portion H in FIG.
【図４】図１の赤外線センサ装置に用いる赤外線アレイ
センサの他の例を示す斜視図である。FIG. 4 is a perspective view showing another example of an infrared array sensor used in the infrared sensor device of FIG.
【図５】従来の赤外線センサ装置の一例を示す説明図で
ある。FIG. 5 is an explanatory diagram showing an example of a conventional infrared sensor device.
【図６】図５の赤外線センサ装置に用いる赤外線アレイ
センサを示す斜視図である。6 is a perspective view showing an infrared array sensor used in the infrared sensor device of FIG.
【図７】図５の赤外線センサ装置に用いる赤外線アレイ
センサの他の例を示す斜視図である。7 is a perspective view showing another example of an infrared array sensor used in the infrared sensor device of FIG.
１００ 赤外線センサ装置 １ 赤外線アレイセンサ ２ 回路基板 ３ 焦電素子 ４，５ 対電極 ６ 焦電材基板 ７ 配線パタン ９ 窓 １０ 格子 ４１ 赤外線アレイセンサ 100 Infrared sensor device 1 Infrared array sensor 2 Circuit board 3 Pyroelectric element 4,5 Counter electrode 6 Pyroelectric material substrate 7 Wiring pattern 9 Window 10 Lattice 41 Infrared array sensor
Claims (2)
置形成し且つ各焦電素子の外部配線すべき電極を焦電材
基板の受光面に並べて近接して設置した赤外線アレイセ
ンサと、前記各焦電素子に対応する複数の窓を穿設し且
つ各窓を仕切る格子部分の反受光側面に配線パタンを形
成した回路基板とを具備してなり、赤外線が前記各窓を
通過して各焦電素子に当たるように且つ前記電極が前記
配線パタンに接続するように前記回路基板の反受光側面
に前記赤外線アレイセンサを貼着したことを特徴とする
赤外線センサ装置。1. An infrared array sensor in which a plurality of pyroelectric elements are arranged and formed on one pyroelectric material substrate, and electrodes to be externally wired of each pyroelectric element are arranged side by side on the light receiving surface of the pyroelectric material substrate. A circuit board having a plurality of windows corresponding to each of the pyroelectric elements and a wiring pattern formed on an anti-light-receiving side surface of a lattice portion partitioning the windows, wherein infrared rays pass through the windows. The infrared sensor device is characterized in that the infrared array sensor is attached to the side of the circuit board opposite to the light-receiving side so as to hit each pyroelectric element and the electrode is connected to the wiring pattern.
基板の受光面に並べて近接して設置した赤外線センサ
と、前記焦電素子に対応する窓を穿設し且つ窓の周辺部
分の反受光側面に配線パタンを形成した回路基板とを具
備してなり、赤外線が前記窓を通過して焦電素子に当た
るように且つ前記電極が前記配線パタンに接続するよう
に前記回路基板の反受光側面に前記赤外線センサを貼着
したことを特徴とする赤外線センサ装置。2. An infrared sensor in which electrodes to be externally wired of a pyroelectric element are arranged side by side on a light-receiving surface of a pyroelectric material substrate, and a window corresponding to the pyroelectric element is formed in a peripheral portion of the window. A circuit board having a wiring pattern formed on the side surface of the anti-light-receiving side of the circuit board such that infrared rays pass through the window and strike the pyroelectric element and the electrodes are connected to the wiring pattern. An infrared sensor device, wherein the infrared sensor is attached to a side surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4341909A JPH06186082A (en) | 1992-12-22 | 1992-12-22 | Infrared sensor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4341909A JPH06186082A (en) | 1992-12-22 | 1992-12-22 | Infrared sensor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH06186082A true JPH06186082A (en) | 1994-07-08 |
Family
ID=18349691
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4341909A Pending JPH06186082A (en) | 1992-12-22 | 1992-12-22 | Infrared sensor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH06186082A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003004527A (en) * | 2001-06-22 | 2003-01-08 | Horiba Ltd | Multielement infrared sensor |
| US7683323B2 (en) * | 2007-03-20 | 2010-03-23 | The Trustees Of Columbia University In The City Of New York | Organic field effect transistor systems and methods |
| US7858975B2 (en) | 2007-03-12 | 2010-12-28 | The Trustees Of Columbia University In The City Of New York | Organic field effect transistor systems and methods |
| WO2012056943A1 (en) * | 2010-10-25 | 2012-05-03 | Ｎｅｃトーキン株式会社 | Pyroelectric sensor array and pyroelectric infrared detection device |
| WO2012132342A1 (en) * | 2011-03-30 | 2012-10-04 | 三菱マテリアル株式会社 | Infrared sensor |
-
1992
- 1992-12-22 JP JP4341909A patent/JPH06186082A/en active Pending
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003004527A (en) * | 2001-06-22 | 2003-01-08 | Horiba Ltd | Multielement infrared sensor |
| US7858975B2 (en) | 2007-03-12 | 2010-12-28 | The Trustees Of Columbia University In The City Of New York | Organic field effect transistor systems and methods |
| US7683323B2 (en) * | 2007-03-20 | 2010-03-23 | The Trustees Of Columbia University In The City Of New York | Organic field effect transistor systems and methods |
| WO2012056943A1 (en) * | 2010-10-25 | 2012-05-03 | Ｎｅｃトーキン株式会社 | Pyroelectric sensor array and pyroelectric infrared detection device |
| CN103229028A (en) * | 2010-10-25 | 2013-07-31 | Nec东金株式会社 | Pyroelectric sensor array and pyroelectric infrared detection device |
| US8766187B2 (en) | 2010-10-25 | 2014-07-01 | Nec Tokin Corporation | Pyroelectric sensor array and pyroelectric infrared detection device |
| JP5901533B2 (en) * | 2010-10-25 | 2016-04-13 | Ｎｅｃトーキン株式会社 | Pyroelectric sensor array and pyroelectric infrared detector |
| WO2012132342A1 (en) * | 2011-03-30 | 2012-10-04 | 三菱マテリアル株式会社 | Infrared sensor |
| JP2012211791A (en) * | 2011-03-30 | 2012-11-01 | Mitsubishi Materials Corp | Infrared sensor |
| US9435691B2 (en) | 2011-03-30 | 2016-09-06 | Mitsubishi Materials Corporation | Infrared sensor |
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