JPH06151517A - Film carrier - Google Patents

Film carrier

Info

Publication number
JPH06151517A
JPH06151517A JP32870692A JP32870692A JPH06151517A JP H06151517 A JPH06151517 A JP H06151517A JP 32870692 A JP32870692 A JP 32870692A JP 32870692 A JP32870692 A JP 32870692A JP H06151517 A JPH06151517 A JP H06151517A
Authority
JP
Japan
Prior art keywords
resin
film
metal plating
base film
runner
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP32870692A
Other languages
Japanese (ja)
Inventor
Takahisa Ishii
高久 石井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Steel Corp
Original Assignee
Nippon Steel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Steel Corp filed Critical Nippon Steel Corp
Priority to JP32870692A priority Critical patent/JPH06151517A/en
Publication of JPH06151517A publication Critical patent/JPH06151517A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29CSHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C45/00Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor
    • B29C45/14Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles
    • B29C45/14639Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles for obtaining an insulating effect, e.g. for electrical components
    • B29C45/14655Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles for obtaining an insulating effect, e.g. for electrical components connected to or mounted on a carrier, e.g. lead frame

Abstract

PURPOSE:To enable easy execution of a gate processing which is needed after a semiconductor device for which a film carrier is used is sealed with resin. CONSTITUTION:In a film carrier 1 which is used for a resin-sealed type semiconductor device to be molded by resin, a metal plating film 10 having low adhesion to resin is formed on a part corresponding to a runner 17 of a bottom tool 12, of the surface Q of a base film material of an outer-peripheral frame part 2b of a base film 2 held by a top force 11 and the bottom tool 12 between. The resin flowing through the runner 17 at the time of resin sealing comes into contact with the surface of the metal plating film 10 alone. Since the adhesion of the metal plating film 10 to the resin is lower than that of the base film material, a residue 22 of resin setting in the runner 17 can be peeled off simply from the surface of the metal plating film 10.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、樹脂によりモールドさ
れる樹脂封止型の半導体装置に用いられるフィルムキャ
リヤに関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a film carrier used in a resin-sealed semiconductor device molded with a resin.

【0002】[0002]

【従来の技術】ウエハから切り出された半導体素子、例
えばICチップの実装技術の一つとして、TAB(Tape
Automated Bonding)方式が知られている。このTAB
方式は、例えば図3及び図4に示すように、ポリイミド
樹脂等からなる可撓性かつ絶縁性を有するベースフィル
ム2上に銅箔等の導電性金属材料からなる複数のリード
3を形成してなるフィルムキャリヤ1を用い、それら各
リード3と半導体素子4に形成された複数の電極とをバ
ンプを介して一括して接合する方式である。なお、ベー
スフィルム2には、半導体素子4が位置されるデバイス
孔5と、各リード3が架橋されるリード孔6と、フィル
ムキャリヤ1の搬送及び位置決め用のスプロケット孔7
とが形成され、各リード3を支持するサポート部2a
と、フィルムキャリヤ1の外枠を構成する外周枠部2b
とが残存されている。
2. Description of the Related Art TAB (Tape
Automated Bonding) method is known. This TAB
As shown in FIG. 3 and FIG. 4, for example, a plurality of leads 3 made of a conductive metal material such as copper foil are formed on a flexible and insulating base film 2 made of a polyimide resin or the like. This is a method in which the respective leads 3 and a plurality of electrodes formed on the semiconductor element 4 are collectively bonded via bumps by using the film carrier 1 as described above. It should be noted that the base film 2 has a device hole 5 in which the semiconductor element 4 is located, a lead hole 6 through which the leads 3 are bridged, and a sprocket hole 7 for carrying and positioning the film carrier 1.
And a support portion 2a for supporting each lead 3
And an outer peripheral frame portion 2b forming an outer frame of the film carrier 1.
And remain.

【0003】そして、一般に、TAB方式における半導
体素子4の保護は、主に熱硬化性樹脂による封止によっ
てなされ、この封止方法として、トランスファモールド
法がある。このトランスファモールド法は、例えば図4
に示すように、半導体素子4が搭載されたフィルムキャ
リヤ1を上型11と下型12とからなる封止用金型によ
り挟持し、加熱溶融した樹脂を加圧しながら上型11及
び下型12のキャビティ13及び14内に注入して硬化
させ、樹脂モールド20を成形する方法である。
In general, the protection of the semiconductor element 4 in the TAB method is mainly performed by sealing with a thermosetting resin, and as a sealing method, there is a transfer molding method. This transfer molding method is shown in FIG.
As shown in FIG. 2, the film carrier 1 on which the semiconductor element 4 is mounted is sandwiched by a sealing die including an upper die 11 and a lower die 12, and the upper die 11 and the lower die 12 are pressed while pressurizing the heat-melted resin. It is a method of molding the resin mold 20 by injecting it into the cavities 13 and 14 and hardening it.

【0004】[0004]

【発明が解決しようとする課題】しかしながら、上述の
ようなトランスファモールド法における封止用金型に
は、一般的に、図4に示すように、金型の樹脂注入口で
あるポットからキャビティ13及び14の入口であるゲ
ート15に通じるランナ(樹脂流入導路)16及び17
が、上型11及び下型12の合わせ面に形成されてい
る。
However, as shown in FIG. 4, the sealing mold in the above-mentioned transfer molding method generally has a cavity 13 from a pot which is a resin injection port of the mold. Runners (resin inflow passages) 16 and 17 leading to a gate 15 which is an entrance of
Are formed on the mating surfaces of the upper mold 11 and the lower mold 12.

【0005】従って、フィルムキャリヤ1を上型11及
び下型12によって挟持すると、ランナ16及び17が
ベースフィルム2の外周枠部2bに接することになり、
樹脂注入時にランナ16及び17内を流動する樹脂が、
硬化後に樹脂残り21及び22として外周枠部2bに付
着してしまう。
Therefore, when the film carrier 1 is sandwiched by the upper mold 11 and the lower mold 12, the runners 16 and 17 come into contact with the outer peripheral frame portion 2b of the base film 2.
The resin flowing in the runners 16 and 17 at the time of resin injection is
After curing, resin residues 21 and 22 are attached to the outer peripheral frame portion 2b.

【0006】このため、樹脂モールド20が成形された
フィルムキャリヤ1を上型11及び下型12から離型し
た後、ゲート処理として、フィルムキャリヤ1を保持し
た状態で、樹脂残り21及び22を外周枠部2bから剥
離して、この樹脂残り21及び22をゲート15部分で
切断する必要がある。
For this reason, after the film carrier 1 on which the resin mold 20 has been molded is released from the upper mold 11 and the lower mold 12, the resin residues 21 and 22 are kept on the outer periphery while the film carrier 1 is held as a gate process. It is necessary to peel off from the frame portion 2b and cut the resin residues 21 and 22 at the gate 15 portion.

【0007】ところが、外周枠部2bのベースフィルム
素材は樹脂との接着性が高く、特に、半導体装置の耐湿
性を向上させるために、ベースフィルム2との界面の接
着力を増加させて、外部からの湿気の進入を防止する効
果の高い樹脂が使われてきている。このため、樹脂残り
21及び22を外周枠部2bから剥離するのは非常に難
しく、樹脂封止後のゲート処理を行うことが極めて困難
になるという問題があった。
However, the base film material of the outer peripheral frame portion 2b has a high adhesiveness with the resin, and in particular, in order to improve the moisture resistance of the semiconductor device, the adhesive force at the interface with the base film 2 is increased, Resins that are highly effective in preventing the ingress of moisture from the inside have been used. Therefore, it is very difficult to peel off the resin residues 21 and 22 from the outer peripheral frame portion 2b, and there is a problem that it becomes extremely difficult to perform the gate processing after the resin sealing.

【0008】さらに、ベースフィルム2の外周枠部2b
の両面のうち特にリード形成面Pには、通常、リード3
の素材である銅箔等が全面的に残存しており、また銅箔
等がない場合でも、銅箔等を接着するための接着剤だけ
が残っていたり、接着性を高めるための凹凸加工が施さ
れたりする場合もある。このため、外周枠部2bのリー
ド形成面Pは、ベースフィルム素材面Qよりも樹脂との
接着性が高くなるので、ランナ16側の樹脂残り21を
外周枠部2bから剥離するのは更に難しい。
Further, the outer peripheral frame portion 2b of the base film 2
The lead 3 is usually formed on the lead forming surface P among the two surfaces.
Even if there is no copper foil etc. remaining on the entire surface, the copper foil etc. that is the material of is left only with the adhesive for adhering the copper foil etc. It may be given. Therefore, the lead forming surface P of the outer peripheral frame portion 2b has higher adhesiveness to the resin than the base film material surface Q, and it is more difficult to peel off the resin residue 21 on the runner 16 side from the outer peripheral frame portion 2b. .

【0009】なお、ベースフィルム2の外周枠部2bに
付着した樹脂残り21及び22を、強い力で無理に剥離
しようとすると、可撓性を有するベースフィルム2が撓
んで、リード3が不測に変形してしまうという問題もあ
った。
If the resin residues 21 and 22 attached to the outer peripheral frame portion 2b of the base film 2 are forcibly peeled off with a strong force, the flexible base film 2 bends and the leads 3 unexpectedly. There was also the problem of deformation.

【0010】そこで本発明は、上記事情に基づいてなさ
れたものであり、樹脂封止後のゲート処理を容易に行う
ことができるフィルムキャリヤを提供することを目的と
する。
Therefore, the present invention has been made in view of the above circumstances, and an object of the present invention is to provide a film carrier capable of easily performing a gate treatment after resin encapsulation.

【0011】[0011]

【課題を解決するための手段】上記の目的を達成するた
め、本発明は、ベースフィルムとこのベースフィルム上
に形成されたリードとからなり、樹脂によりモールドさ
れる樹脂封止型の半導体装置に用いられるフィルムキャ
リヤであって、封止用金型により挟持される前記ベース
フィルムの面において、前記封止用金型に設けられた樹
脂流入用のランナと対応する部分に、樹脂との接着性が
低い金属メッキ被膜を形成したものである。
In order to achieve the above object, the present invention provides a resin-encapsulated semiconductor device which is composed of a base film and leads formed on the base film and is molded with a resin. A film carrier used, in the surface of the base film sandwiched by the sealing mold, adhesiveness with the resin at a portion corresponding to the resin inflow runner provided in the sealing mold. It has a low metal plating film.

【0012】なお、前記金属メッキ被膜を金メッキによ
って構成すると良い。
The metal plating film may be formed by gold plating.

【0013】[0013]

【作用】上記のように構成された本発明によれば、フィ
ルムキャリヤのベースフィルムの面には、封止用金型の
ランナと対応する部分に、樹脂との接着性が低い金属メ
ッキ被膜が形成されているので、そのフィルムキャリヤ
に半導体素子を搭載して樹脂封止する際に、ランナ内を
流動する樹脂は金属メッキ被膜上にのみ接することにな
る。この金属メッキ被膜は樹脂との接着性が低いので、
ランナ内で硬化した樹脂残りを金属メッキ被膜上から簡
単に剥離することができ、樹脂封止後のゲート処理を極
めて容易に行うことができる。
According to the present invention constructed as described above, the surface of the base film of the film carrier is provided with the metal plating film having low adhesiveness to the resin on the portion corresponding to the runner of the sealing die. Since it is formed, when the semiconductor element is mounted on the film carrier and sealed with resin, the resin flowing in the runner comes into contact only with the metal plating film. Since this metal plating film has low adhesion to resin,
The resin residue cured in the runner can be easily peeled off from the metal plating film, and the gate treatment after resin encapsulation can be performed very easily.

【0014】[0014]

【実施例】以下、本発明の一実施例を図1及び図2を参
照して説明する。図1はフィルムキャリヤをベースフィ
ルム面から見た底面図、図2は上記フィルムキャリヤに
半導体素子を搭載して封止用金型を用いて樹脂封止した
状態における図1のA−A線矢視断面図である。なお前
記従来例と実質的に同一の構成部分には同一の符号を付
してその説明を省略する。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to FIGS. 1 is a bottom view of the film carrier as seen from the surface of the base film, and FIG. 2 is a line AA of FIG. 1 in a state where a semiconductor element is mounted on the film carrier and is resin-sealed using a sealing die. FIG. It should be noted that the same components as those of the conventional example are designated by the same reference numerals, and the description thereof will be omitted.

【0015】まず、図2に示すように、本実施例のフィ
ルムキャリヤ1を樹脂封止するための封止用金型は上型
11と下型12とによって構成されているが、キャビテ
ィ13及び14内への樹脂流入用のランナ17は下型1
2のみに設けられている。
First, as shown in FIG. 2, the sealing die for resin-sealing the film carrier 1 of this embodiment is composed of an upper die 11 and a lower die 12, and the cavity 13 and The runner 17 for inflowing the resin into the lower mold 14 is the lower mold 1
It is provided only in 2.

【0016】そして、この封止用金型によって樹脂封止
されるフィルムキャリヤ1は、図1及び図2に示すよう
に、ベースフィルム2の外周枠部2bの下面(ベースフ
ィルム素材面Q)において、下型12のランナ17と対
応する部分に、樹脂との接着性が低い金属メッキ被膜1
0が形成されている。この金属メッキ被膜10の形成範
囲はランナ17に対応する部分を含めてこれよりも大き
な範囲に設定されている。
As shown in FIGS. 1 and 2, the film carrier 1 which is resin-sealed by the sealing die has a lower surface (base film material surface Q) of the outer peripheral frame portion 2b of the base film 2 as shown in FIGS. , A metal plating film 1 having a low adhesiveness with a resin on a portion of the lower die 12 corresponding to the runner 17
0 is formed. The range of formation of the metal plating film 10 is set to be larger than the range including the portion corresponding to the runner 17.

【0017】なお、上記金属メッキ被膜10は、ベース
フィルム素材と比較して、樹脂との接着性が低いもので
あり、クロムメッキ、金メッキ等が有効である。特に金
メッキは、公知の手段によりフィルムキャリヤ1のリー
ド3上に施されるので、新たなメッキ設備を構築する必
要がなく好適である。
The metal plating film 10 has a lower adhesiveness with the resin than the base film material, and chrome plating, gold plating and the like are effective. In particular, since gold plating is applied to the leads 3 of the film carrier 1 by a known means, there is no need to construct new plating equipment, which is preferable.

【0018】そして、図2に示すように、半導体素子4
が搭載されたフィルムキャリヤ1を上型11と下型12
とによって挟持し、下型12のランナ17を通して、上
型11及び下型12のキャビティ13及び14内に樹脂
を注入して硬化させ、樹脂モールド20を成形する。
Then, as shown in FIG.
The film carrier 1 on which is mounted the upper mold 11 and the lower mold 12
The resin mold 20 is molded by sandwiching the resin mold with, and injecting a resin into the cavities 13 and 14 of the upper mold 11 and the lower mold 12 through the runner 17 of the lower mold 12 to cure the resin.

【0019】上記のように構成された本実施例によれ
ば、ベースフィルム2の外周枠部2bのベースフィルム
素材面Qには、下型12のランナ17と対応する部分
に、樹脂との接着性が低い金属メッキ被膜10が形成さ
れていることにより、ランナ17内を流動する樹脂は金
属メッキ被膜10上のみに接することになる。この金属
メッキ被膜10はベースフィルム素材よりも樹脂との接
着性が低いので、ランナ17内で硬化した樹脂残り22
を金属メッキ被膜10上から簡単に剥離することがで
き、樹脂封止後のゲート処理を極めて容易に行うことが
できる。
According to the present embodiment configured as described above, the base film material surface Q of the outer peripheral frame portion 2b of the base film 2 is bonded to the resin at the portion corresponding to the runner 17 of the lower die 12. Since the metal plating film 10 having low property is formed, the resin flowing in the runner 17 contacts only the metal plating film 10. Since the metal plating film 10 has lower adhesiveness to the resin than the base film material, the resin residue 22 cured in the runner 17
Can be easily peeled off from the metal plating film 10, and the gate treatment after resin sealing can be performed very easily.

【0020】また、樹脂残り22の剥離を弱い力で簡単
に行うことができるので、可撓性を有するベースフィル
ム2が撓むことはなく、リード3の不測な変形を未然に
防止することができる。
Further, since the resin residue 22 can be easily peeled off with a weak force, the flexible base film 2 does not bend and the lead 3 can be prevented from being unexpectedly deformed. it can.

【0021】なお、本実施例のフィルムキャリヤ1を樹
脂封止する場合、ランナ17を下型12のみに設け、ベ
ースフィルム2の外周枠部2bのベースフィルム素材面
Qに金属メッキ被膜10を形成したが、ランナを上型1
1のみに或いは上型11及び下型12の両方に設けた場
合には、金属メッキ被膜10を外周枠部2bのリード形
成面Pと同一面に施して良いことは勿論である。それに
よって、樹脂との接着性が高いリード形成面Pにおいて
も、樹脂残りの剥離を簡単に行うことができる。
When the film carrier 1 of this embodiment is resin-sealed, the runner 17 is provided only on the lower die 12 and the metal plating film 10 is formed on the base film material surface Q of the outer peripheral frame portion 2b of the base film 2. However, runner 1
Of course, when it is provided on only one or both the upper mold 11 and the lower mold 12, the metal plating film 10 may be provided on the same surface as the lead forming surface P of the outer peripheral frame portion 2b. Thereby, even on the lead forming surface P having high adhesiveness with the resin, the remaining resin can be easily peeled off.

【0022】[0022]

【発明の効果】以上説明したように、本発明によれば、
ベースフィルムの面においてランナと対応する部分に樹
脂との接着性が低い金属メッキ被膜を形成することによ
って、ベースフィルムとの接着性が高い封止樹脂を用い
て得られる半導体装置の耐湿性の向上を図りながら、半
導体装置の樹脂封止後に必要となるゲート処理を極めて
容易に行うことができる。その結果として、ゲートの樹
脂残りの発生及びリードの不測な変形を未然に防止する
ことができるので、樹脂封止型の半導体装置の生産性及
び品質を大幅に向上させることが可能となる。また、ベ
ースフィルムの金属メッキ被膜をランナに対応させるの
で、従来の封止用金型をそのまま使用することができ
る。
As described above, according to the present invention,
Improving the moisture resistance of semiconductor devices obtained by using a sealing resin with high adhesiveness to the base film by forming a metal plating film with low adhesiveness to the resin on the surface of the base film corresponding to the runner It is possible to extremely easily perform the gate processing that is required after the semiconductor device is sealed with the resin. As a result, generation of resin residue on the gate and unexpected deformation of the leads can be prevented in advance, so that the productivity and quality of the resin-sealed semiconductor device can be significantly improved. Further, since the metal plating film of the base film corresponds to the runner, the conventional sealing mold can be used as it is.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の一実施例によるフィルムキャリヤをベ
ースフィルム面から見た底面図である。
FIG. 1 is a bottom view of a film carrier according to an exemplary embodiment of the present invention, viewed from the side of a base film.

【図2】上記フィルムキャリヤに半導体素子を搭載して
封止用金型を用いて樹脂封止した状態における図1のA
−A線矢視断面図である。
FIG. 2A of FIG. 1 in a state in which a semiconductor element is mounted on the film carrier and is resin-sealed by using a sealing die.
It is a sectional view taken along line A-A.

【図3】従来のフィルムキャリヤの平面図である。FIG. 3 is a plan view of a conventional film carrier.

【図4】上記フィルムキャリヤに半導体素子を搭載して
封止用金型を用いて樹脂封止した状態における図3のB
−B線矢視断面図である。
FIG. 4B of FIG. 3 in a state in which a semiconductor element is mounted on the film carrier and is resin-sealed by using a sealing die.
FIG. 6 is a cross-sectional view taken along line B-arrow.

【符号の説明】[Explanation of symbols]

1 フィルムキャリヤ 2 ベースフィルム 2b 外周枠部 3 リード 4 半導体素子 10 金属メッキ被膜 11 上型 12 下型 13 キャビティ 14 キャビティ 15 ゲート 17 ランナ 20 樹脂モールド 22 樹脂残り P リード形成面 Q ベースフィルム素材面 1 film carrier 2 base film 2b outer peripheral frame 3 lead 4 semiconductor element 10 metal plating film 11 upper mold 12 lower mold 13 cavity 14 cavity 15 gate 17 runner 20 resin mold 22 resin remaining P lead formation surface Q base film material surface

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 ベースフィルムとこのベースフィルム上
に形成されたリードとからなり、樹脂によりモールドさ
れる樹脂封止型の半導体装置に用いられるフィルムキャ
リヤであって、 封止用金型により挟持される前記ベースフィルムの面に
おいて、前記封止用金型に設けられた樹脂流入用のラン
ナと対応する部分に、樹脂との接着性が低い金属メッキ
被膜を形成したことを特徴とするフィルムキャリヤ。
1. A film carrier comprising a base film and leads formed on the base film, the film carrier being used in a resin-sealed semiconductor device molded with a resin, the film carrier being sandwiched between sealing molds. A film carrier characterized in that a metal plating film having low adhesiveness to a resin is formed on a portion of the surface of the base film corresponding to the resin inflow runner provided in the sealing die.
【請求項2】 前記金属メッキ被膜を金メッキによって
構成したことを特徴とする請求項1記載のフィルムキャ
リヤ。
2. The film carrier according to claim 1, wherein the metal plating film is formed by gold plating.
JP32870692A 1992-11-13 1992-11-13 Film carrier Withdrawn JPH06151517A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP32870692A JPH06151517A (en) 1992-11-13 1992-11-13 Film carrier

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP32870692A JPH06151517A (en) 1992-11-13 1992-11-13 Film carrier

Publications (1)

Publication Number Publication Date
JPH06151517A true JPH06151517A (en) 1994-05-31

Family

ID=18213273

Family Applications (1)

Application Number Title Priority Date Filing Date
JP32870692A Withdrawn JPH06151517A (en) 1992-11-13 1992-11-13 Film carrier

Country Status (1)

Country Link
JP (1) JPH06151517A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1998022980A1 (en) * 1996-11-21 1998-05-28 Hitachi, Ltd. Semiconductor device and process for manufacturing the same

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1998022980A1 (en) * 1996-11-21 1998-05-28 Hitachi, Ltd. Semiconductor device and process for manufacturing the same
US6664616B2 (en) 1996-11-21 2003-12-16 Hitachi, Ltd. Semiconductor device and manufacturing method thereof
US6759272B2 (en) 1996-11-21 2004-07-06 Renesas Technology Corp. Semiconductor device and manufacturing method thereof

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A300 Withdrawal of application because of no request for examination

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Effective date: 20000201