JPH0613435A - Carrier tape and manufacturing method thereof - Google Patents
Carrier tape and manufacturing method thereofInfo
- Publication number
- JPH0613435A JPH0613435A JP16591492A JP16591492A JPH0613435A JP H0613435 A JPH0613435 A JP H0613435A JP 16591492 A JP16591492 A JP 16591492A JP 16591492 A JP16591492 A JP 16591492A JP H0613435 A JPH0613435 A JP H0613435A
- Authority
- JP
- Japan
- Prior art keywords
- copper foil
- copper
- carrier tape
- plating
- foil
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Parts Printed On Printed Circuit Boards (AREA)
- Electroplating Methods And Accessories (AREA)
- Wire Bonding (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、キャリアテープ及びそ
の製造方法に係り、特にリードに施した錫めっきによる
ホイスカの発生を有効に防止するキャリアテープ及びそ
の製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a carrier tape and a method for manufacturing the same, and more particularly to a carrier tape and a method for manufacturing the same which can effectively prevent whiskers from being formed by tin plating on leads.
【０００２】[0002]
【従来の技術】近年、半導体素子の実装技術の自動化、
及び高速化を図るため、長尺状のキャリアテープにワイ
ヤレスボンディングによりＩＣやＬＳＩ等の半導体素子
を組み込んでいくＴＡＢ（Tape Automated Bonding）方
式が採用されている。2. Description of the Related Art In recent years, automation of mounting technology for semiconductor elements,
In order to achieve high speed, a TAB (Tape Automated Bonding) method in which semiconductor elements such as ICs and LSIs are incorporated into a long carrier tape by wireless bonding is adopted.
【０００３】図３に、従来のＴＡＢ方式に用いられるＴ
ＡＢ用キャリアテープの構成を示す。ＴＡＢ用キャリア
テープ１はポリイミド、ポリエステル等からなる可撓
性、絶縁性の樹脂フィルムテープ２上に銅箔を接着し、
フォトエッチングによってアウターリード３、及びイン
ナーリード４を有する銅リード５を形成して構成され
る。FIG. 3 shows a T used in a conventional TAB system.
The structure of the AB carrier tape is shown. The TAB carrier tape 1 comprises a flexible and insulating resin film tape 2 made of polyimide, polyester or the like, and a copper foil bonded to the tape film 2.
The copper leads 5 having the outer leads 3 and the inner leads 4 are formed by photoetching.
【０００４】樹脂フィルムテープ２は、ＩＣ、ＬＳＩ等
の半導体素子（図示せず）を収容するためのデバイスホ
ール６、フィルム搬送や位置決めを行うためのスプロケ
ットホール７、そして電気信号を取り出すためのアウタ
ーホール８を、それぞれパンチング加工によって形成す
ることにより構成される。The resin film tape 2 is a device hole 6 for accommodating semiconductor elements (not shown) such as IC and LSI, a sprocket hole 7 for carrying and positioning the film, and an outer for taking out electric signals. The holes 8 are formed by punching.
【０００５】銅リード５は、樹脂フィルムテープ２の表
面に銅箔を貼り合わせて、この銅箔に感光性レジストを
塗布し、乾燥させた後、所定のパターンのフォトマスク
を通して露光し、更に、現像して所定のパターン形状の
フォトレジスト層を形成した後、このフォトレジスト層
をマスクとしてエッチングを行って形成される。In the copper lead 5, a copper foil is attached to the surface of the resin film tape 2, a photosensitive resist is applied to the copper foil, dried, and then exposed through a photomask having a predetermined pattern. It is formed by developing and forming a photoresist layer having a predetermined pattern, and then etching is performed using this photoresist layer as a mask.
【０００６】このようにして銅リード５が形成される
と、デバイスホール６にＩＣチップを配置し、ＩＣチッ
プ上に形成された微小の電極とテープ上の対応するイン
ナーリード４とを加熱したボンディングツールにより熱
圧着する。このとき、比較的低温で接合できるようにす
るため、従来、銅リードの表面に錫めっきを施すように
している。When the copper leads 5 are formed in this manner, an IC chip is placed in the device hole 6 and the minute electrodes formed on the IC chip and the corresponding inner leads 4 on the tape are heated and bonded. Thermo-compression bonding with a tool. At this time, in order to enable bonding at a relatively low temperature, the surface of the copper lead has conventionally been tin-plated.
【０００７】[0007]
【発明が解決しようとする課題】銅リードに錫めっきを
行うと、めっき後室温中保管の間に時間経過と共に、錫
めっきからホイスカ（「ひげ」と称する針状結晶）が発
生する。その原因の一つとして、下地銅箔表面の配向性
（特に（２２０）面）によって生じる錫めっきと銅箔界
面でのひずみ応力が考えられる。ホイスカは一度発生す
ると、急速に成長する（例えば、室温放置で３０〜４０
μｍ長／月にもなる）ため、リード間の短絡不良事故を
招くおそれが有り、半導体装置としての信頼性を低下さ
せる要因となっている。したがって、ホイスカの発生を
抑制するためには、錫めっきの施される銅箔の材料は非
常に重要となり、銅箔の結晶粒度を小さくして錫めっき
と銅箔界面でのひずみ応力を小さくする必要がある。従
来、銅箔材料には電解めっきにより形成される電解銅箔
と、スラブに圧延加工を繰り返すことによって形成され
る圧延銅箔とがある。電解銅箔は表面粗さが粗いので上
記要請に応えることができず、これに対して圧延銅箔
は、電解銅箔よりも表面が滑らかであるが、機械的加工
による限界があり、これもまたホイスカの発生を有効に
防止できなかった。なお、銅箔材料を製造するには、作
業効率の点から圧延方式よりも機械加工を伴わない電解
方式の方が優れている。When tin plating is applied to a copper lead, whiskers (needle-shaped crystals called "whiskers") are generated from the tin plating over time during storage at room temperature after plating. As one of the causes, it is considered that the strain stress at the interface between the tin plating and the copper foil caused by the orientation of the surface of the underlying copper foil (in particular, the (220) plane). Once generated, whiskers grow rapidly (eg 30-40 at room temperature).
Therefore, there is a possibility of causing a short circuit failure between leads, which is a factor of reducing reliability as a semiconductor device. Therefore, in order to suppress the occurrence of whiskers, the material of the tin-plated copper foil is very important, and the grain size of the copper foil is made small to reduce the strain stress at the tin-plating and copper foil interface. There is a need. Conventionally, copper foil materials include electrolytic copper foil formed by electrolytic plating and rolled copper foil formed by repeating rolling processing on a slab. Electrolytic copper foil can not meet the above requirements because the surface roughness is rough, rolled copper foil, on the other hand, the surface is smoother than electrolytic copper foil, but there is a limit due to mechanical processing, which also Moreover, the generation of whiskers could not be effectively prevented. In terms of work efficiency, the electrolytic method without machining is superior to the rolling method for producing a copper foil material.
【０００８】本発明の目的は、前記した従来技術の欠点
を解消し、電解方式をとりながら錫ホイスカの発生を大
幅に低減させることができる新規なキャリアテープ及び
その製造方法を提供することにある。An object of the present invention is to solve the above-mentioned drawbacks of the prior art and to provide a novel carrier tape capable of greatly reducing the generation of tin whiskers while adopting an electrolytic method, and a method of manufacturing the same. .
【０００９】[0009]
【課題を解決するための手段】本発明のキャリアテープ
は、樹脂フィルムテープに銅箔を貼り付けたキャリアテ
ープにおいて、Ｘ線回折により検出された銅箔の箔面及
び内部の（２００）、（２２０）、（１１１）の各面の
ピーク強度の累積値に占める（２２０）面の強度の割合
を３０％以下としたものである。The carrier tape of the present invention is a carrier tape obtained by sticking a copper foil to a resin film tape, and the (200), () of the foil surface and the inside of the copper foil detected by X-ray diffraction. The ratio of the intensity of the (220) plane to the cumulative peak intensity of the (220) plane and the (111) plane is 30% or less.
【００１０】また、本発明のキャリアテープの製造方法
は、上記キャリアテープの銅箔を製造するために、めっ
き用電源をパルス電源とする電解めっきにより製造した
ものである。Further, the method for producing a carrier tape of the present invention is one for producing the copper foil of the carrier tape by electrolytic plating using a pulse power source as a plating power source.
【００１１】樹脂フィルムテープは、ポリイミド樹脂フ
ィルムテープ、ポリエステル樹脂フィルムテープ等から
なる。また、銅箔には純銅で構成された箔の他に銅合金
で構成された銅合金箔も含まれる。The resin film tape comprises a polyimide resin film tape, a polyester resin film tape and the like. Further, the copper foil includes a copper alloy foil made of a copper alloy in addition to a foil made of pure copper.
【００１２】[0012]
【作用】錫めっきと銅箔界面でのひずみ応力を小さくし
て、錫めっきで問題となるホイスカの発生を有効に抑え
るには、銅の結晶粒度をできるだけ緻密なものにする必
要から、下地銅箔表面の配向性、特に高次な（２２０）
面の少ない構造が好ましい。[Function] In order to reduce the strain stress at the interface between tin plating and copper foil and effectively suppress the generation of whiskers, which is a problem in tin plating, it is necessary to make the grain size of copper as dense as possible. Orientation of foil surface, especially high order (220)
A structure having a small number of faces is preferable.
【００１３】通常の電解めっき方式であると既述したよ
うに銅の結晶粒子が粗大となるが、めっき電源をパルス
電源とするパルス波重畳法（通称、パルスめっき方式）
とすると、銅の結晶粒子が微細になり、電解めっき方式
でありながら、銅箔をＸ線回折強度比が３０％以下の
（２２０）面の少ない構造とすることができる。Although the copper crystal particles become coarse as already described as the normal electrolytic plating method, the pulse wave superposition method using the pulse power source as the plating power source (commonly called the pulse plating method)
Then, the crystal grains of copper become fine, and the copper foil can have a structure having a small (220) plane with an X-ray diffraction intensity ratio of 30% or less even though it is an electrolytic plating method.
【００１４】銅箔の箔面及び内部の（２２０）面の結晶
配向がＸ線回折強度比で３０％以下であると、銅箔加工
により形成したリードの一部に錫めっきを施した場合で
も、ホイスカの発生が少なくなり、その成長が遅くな
る。If the crystal orientation of the foil surface and the internal (220) plane of the copper foil is 30% or less in terms of the X-ray diffraction intensity ratio, even if some of the leads formed by the copper foil processing are tin-plated. , Whiskers are less likely to occur and their growth slows down.
【００１５】[0015]
【実施例】以下、本発明の実施例を説明する。ＴＡＢ用
キャリアテープを構成する樹脂フィルムテープ上に貼り
付ける銅箔または銅合金箔（以下、単に銅箔という）
は、その箔面及び内部の（２２０）面の結晶配向をＸ線
回折強度比で３０％以下とする。ここでいうＸ線強度比
は、Ｘ線回折により検出された（２００）、（２２
０）、（１１１）の各面のピーク強度の累積値に占める
（２２０）面の強度の割合をいう。（２２０）面の少な
い銅箔を電解めっき方式で得るには、銅の結晶粒子をで
きるだけ緻密なものにする必要がある。そのためは、め
っき用電源を、単相半波や単相全波、または三相半波や
三相全波ではなく、パルス電源とするパルス方式の電解
めっきにより製造する。EXAMPLES Examples of the present invention will be described below. Copper foil or copper alloy foil (hereinafter simply referred to as copper foil) to be attached onto the resin film tape that constitutes the TAB carrier tape
The X-ray diffraction intensity ratio of the crystal orientation of the foil surface and the internal (220) plane is 30% or less. The X-ray intensity ratio here is detected by X-ray diffraction (200), (22
0) and the ratio of the intensity of the (220) plane to the cumulative value of the peak intensity of the (111) plane. In order to obtain a copper foil having a small number of (220) faces by the electrolytic plating method, it is necessary to make the copper crystal particles as dense as possible. For that purpose, the plating power supply is not a single-phase half-wave or a single-phase full-wave, or a three-phase half-wave or a three-phase full-wave, but is manufactured by pulse-type electrolytic plating using a pulse power supply.
【００１６】パルス方式による電解銅箔の製造法は、め
っき浴を酸性銅浴とし、回転ドラムを陰極とする。電気
分解条件は、平均電流密度５Ａ／ｄｍ2 、周波数１００
Ｈｚ、デューティーサイクル１０％とする。この条件下
で連続的に銅をドラムに電着させながら、回転ドラムよ
り銅を連続的に剥離し、ロール状の銅箔を得る。銅箔の
厚みは、従来の電解銅箔及び圧延銅箔と同じ３５μｍと
する。また、銅箔加工により形成したリードパターンの
一部に施す錫めっきは、無電解めっき方式により酸性錫
めっき浴を用いる。めっき厚は、０．５〜１．０μｍに
形成され、このときの条件は、液温６０±１℃、浸漬時
間４〜６分とする。これにより耐錫ホイスカ性が大幅に
向上する。In the method for producing an electrolytic copper foil by the pulse method, the plating bath is an acidic copper bath and the rotating drum is a cathode. The electrolysis conditions are: average current density 5 A / dm 2 , frequency 100.
Hz and a duty cycle of 10%. Under this condition, the copper is continuously peeled from the rotary drum while continuously electrodepositing the copper on the drum to obtain a rolled copper foil. The thickness of the copper foil is 35 μm, which is the same as the conventional electrolytic copper foil and rolled copper foil. For tin plating applied to a part of the lead pattern formed by the copper foil processing, an acidic tin plating bath is used by an electroless plating method. The plating thickness is 0.5 to 1.0 μm, and the conditions at this time are a liquid temperature of 60 ± 1 ° C. and an immersion time of 4 to 6 minutes. This significantly improves tin whisker resistance.
【００１７】このように、本実施例のＴＡＢ用キャリア
テープは、キャリアテープを構成する銅箔を、パルス方
式の電解めっき式で形成したことにより、箔面の（２２
０）面配向性を従来の電解銅箔、圧延銅箔より低い３０
％以下の強度比にでき、したがって、錫ホイスカの発生
・成長を室温放置で電解箔品の１／３、圧延箔品の１／
２に低減できる。その結果、リード間の短絡不良事故を
招くおそれが大幅に低減し、ＴＡＢキャリアテープの小
型、薄型化に伴う微細パターン化への対応において特に
問題となる耐錫ホイスカ性の向上に有効であり、半導体
装置としての信頼性を向上させることができる。As described above, in the TAB carrier tape of this embodiment, the copper foil forming the carrier tape is formed by the pulse electrolytic plating method, so that the (22)
0) The plane orientation is lower than that of conventional electrolytic copper foil and rolled copper foil.
% Or less, so that the generation and growth of tin whiskers can be left at room temperature for 1/3 of electrolytic foil products and 1 / of rolled foil products.
It can be reduced to 2. As a result, the risk of causing a short-circuit failure between leads is significantly reduced, and it is effective in improving tin whisker resistance, which is a particular problem in dealing with the miniaturization and miniaturization of TAB carrier tapes. The reliability as a semiconductor device can be improved.
【００１８】次に、上記した本実施例による銅箔と、従
来例による電解銅箔、圧延銅箔とを比較した実験例につ
いて説明する。Next, an experimental example in which the above-mentioned copper foil according to the present embodiment is compared with the electrolytic copper foil and the rolled copper foil according to the conventional example will be described.
【００１９】（１）実験方法 ＴＡＢテープ用銅箔として、従来仕様の電解銅箔、圧延
銅箔、そして本実施例による銅箔の３つの試料を用意
し、各々脱脂、酸洗処理を行った後、有機酸をベースに
した錫めっき液を用いて、めっきを行った。酸洗による
銅箔表面のエッチング量１５μｍである。(1) Experimental method As the copper foil for TAB tape, three samples of conventional electrolytic copper foil, rolled copper foil, and copper foil according to this example were prepared and degreased and pickled. Then, plating was performed using a tin plating solution based on an organic acid. The etching amount of the copper foil surface by pickling is 15 μm.
【００２０】これらの試料についてＸ線回折装置を用い
て、（２２０）面の結晶配向状況を調査した。そして、
めっき後、室温放置でのホイスカ発生・成長について観
察した。観察は、金属顕微鏡を用い、長さは１ｃｍ2 当
り最長のもの２０本の平均をとった。The crystal orientation of the (220) plane was investigated for these samples using an X-ray diffractometer. And
After plating, whiskers were observed to grow and grow at room temperature. For observation, a metallographic microscope was used, and the average length of the 20 longest pieces per cm 2 was taken.
【００２１】（２）実験結果 各々の銅箔についての（２２０）面のＸ線強度比を図１
に示す。なお、図中のＩ／Ｉ0 は、Ｉ＝（２００）面の
ピーク強度値、Ｉ0 ＝（２００）、（２２０）、（１１
１）である。本実施例のものは、強度比３０％以下を示
していることがわかる。従来品では、圧延銅箔のＸ線強
度比が電解銅箔のそれより小さい。(2) Experimental Results The X-ray intensity ratio of the (220) plane for each copper foil is shown in FIG.
Shown in. In the figure, I / I 0 is the peak intensity value of I = (200) plane, and I 0 = (200), (220), (11
1). It can be seen that the material of this example exhibits a strength ratio of 30% or less. In the conventional product, the X-ray intensity ratio of the rolled copper foil is smaller than that of the electrolytic copper foil.
【００２２】めっき後の経過時間とホイスカ発生・成長
に関しては図２に示す。本実施例による銅箔は、電解方
式により形成した箔にもかかわらず、ホイスカの発生・
成長は小さい。従来品では、先の（２２０）面強度比の
大小に対応し、圧延銅箔のホイスカの発生・成長は電解
銅箔のそれよりも小さかった。FIG. 2 shows the elapsed time after plating and the generation and growth of whiskers. In the copper foil according to this embodiment, whiskers are generated despite the foil formed by the electrolytic method.
Growth is small. In the conventional product, the generation and growth of whiskers in the rolled copper foil were smaller than that in the electrolytic copper foil, corresponding to the magnitude of the above (220) plane strength ratio.
【００２３】[0023]
【発明の効果】（１）請求項１に記載のキャリアテープ
は、銅箔の（２２０）面配向性をより低くでき、その結
果、錫ホイスカの発生・成長を低減でき、キャリアテー
プの信頼性を向上することができる。(1) The carrier tape according to claim 1 can further reduce the orientation of the (220) plane of the copper foil, and as a result, the generation and growth of tin whiskers can be reduced and the reliability of the carrier tape can be reduced. Can be improved.
【００２４】（２）請求項２に記載のキャリアテープの
製造方法は、電解めっき方式でありながら、銅箔の（２
２０）面配向性をより低くでき、その結果、錫ホイスカ
の発生・成長を低減でき、製造効率及びキャリアテープ
の信頼性を向上することができる。(2) The method for producing a carrier tape according to claim 2 is a method for producing a copper foil (2
20) The plane orientation can be further lowered, and as a result, the generation and growth of tin whiskers can be reduced, and the manufacturing efficiency and the reliability of the carrier tape can be improved.
【図１】本実施例、従来例による各銅箔表面の（２２
０）面Ｘ線強度比の比較特性図。FIG. 1 shows (22) of each copper foil surface according to this embodiment and a conventional example.
0) Comparative characteristic diagram of surface X-ray intensity ratio.
【図２】本実施例、従来例による錫めっきを施した各銅
箔に成長する錫ホイスカ長の比較特性図。FIG. 2 is a comparative characteristic diagram of the length of tin whiskers grown on each tin-plated copper foil according to the present example and the conventional example.
【図３】本実施例及び従来例に共通するＴＡＢキャリア
テープの平面図。FIG. 3 is a plan view of a TAB carrier tape common to this embodiment and a conventional example.
１ キャリアテープ ２ 樹脂フィルムテープ ３ アウターリード ４ インナーリード ５ 銅リード ６ デバイスホール ７ スプロケットホール ８ アウターホール 1 Carrier tape 2 Resin film tape 3 Outer lead 4 Inner lead 5 Copper lead 6 Device hole 7 Sprocket hole 8 Outer hole
Claims (2)
テープにおいて、 Ｘ線回折により検出された上記銅箔の（２００）、（２
２０）、（１１１）の各面のピーク強度の累積値に占め
る（２２０）面の強度の割合を３０％以下としたことを
特徴とするキャリアテープ。1. A carrier tape comprising a resin tape and a copper foil bonded thereto, wherein the copper foils (200) and (2) are detected by X-ray diffraction.
20) and the carrier tape, wherein the ratio of the intensity of the (220) plane to the cumulative value of the peak intensity of each of the (111) planes is 30% or less.
源をパルス電源とする電解めっきにより製造したことを
特徴とするキャリアテープの製造方法。2. A method of manufacturing a carrier tape, characterized in that the copper foil according to claim 1 is manufactured by electrolytic plating using a plating power supply as a pulse power supply.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16591492A JPH0613435A (en) | 1992-06-24 | 1992-06-24 | Carrier tape and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16591492A JPH0613435A (en) | 1992-06-24 | 1992-06-24 | Carrier tape and manufacturing method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0613435A true JPH0613435A (en) | 1994-01-21 |
Family
ID=15821416
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16591492A Pending JPH0613435A (en) | 1992-06-24 | 1992-06-24 | Carrier tape and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0613435A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07268678A (en) * | 1994-03-31 | 1995-10-17 | Mitsui Mining & Smelting Co Ltd | Electrolytic copper foil for printed circuit board and its production |
| JP2004339605A (en) * | 2003-05-12 | 2004-12-02 | Rohm & Haas Electronic Materials Llc | Improved tin-plating method |
| KR100650488B1 (en) * | 2004-06-18 | 2006-11-29 | 쯔루미소다 가부시끼가이샤 | Copper Plating Material and Copper Plating Method |
| KR100990272B1 (en) * | 2008-01-25 | 2010-10-26 | 엘에스엠트론 주식회사 | Flexible copper clad laminate having good dimensional stability and copper foil structure for the same |
| JP2011017036A (en) * | 2009-07-07 | 2011-01-27 | Ebara-Udylite Co Ltd | Copper plating method |
-
1992
- 1992-06-24 JP JP16591492A patent/JPH0613435A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07268678A (en) * | 1994-03-31 | 1995-10-17 | Mitsui Mining & Smelting Co Ltd | Electrolytic copper foil for printed circuit board and its production |
| JP2004339605A (en) * | 2003-05-12 | 2004-12-02 | Rohm & Haas Electronic Materials Llc | Improved tin-plating method |
| JP4603812B2 (en) * | 2003-05-12 | 2010-12-22 | ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． | Improved tin plating method |
| KR100650488B1 (en) * | 2004-06-18 | 2006-11-29 | 쯔루미소다 가부시끼가이샤 | Copper Plating Material and Copper Plating Method |
| KR100990272B1 (en) * | 2008-01-25 | 2010-10-26 | 엘에스엠트론 주식회사 | Flexible copper clad laminate having good dimensional stability and copper foil structure for the same |
| JP2011017036A (en) * | 2009-07-07 | 2011-01-27 | Ebara-Udylite Co Ltd | Copper plating method |
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